JPH02214112A - Thin-film manufacturing apparatus - Google Patents

Abstract

PURPOSE:To make a stream of a gas to the surface of a specimen uniform and to form a uniform film by a method wherein a gas-supply port is constituted of a tip- opening part of a gas-supply tube capable of introducing the gas in a direction perpendicular to a face on which a thin film of the specimen is deposited and an evacuation port is installed on a face of a reaction container on the side opposite to the face on which the thin film of the specimen is deposited. CONSTITUTION:A gas-supply tube 1 is formed to be cylindrical; its upper part is installed in a vertical direction from the upper-part center of a reaction container 2 formed to be a nearly spherical shape; the tube lower-end part is provided with a funnel-shaped opening part 1a. A specimen 3 is arranged at a prescribed interval vertically under the opening part 1a; an opening part 5e is installed at an evacuation port 5 so as to surround an outer periphery part of the specimen 3. Accordingly, a gas which has been supplied from the gas-supply tube 1 flows vertically while it is being spread in a horizontal direction by the opening part 1a. The gas which has reached the surface of the specimen 3 flows toward the outer peripheral part of the specimen 3 and is evacuated from the evacuation port 5. Thereby, the gas which has been introduced into the reaction container 2 uniformly flows on the surface of the specimen 3, and a uniform film can be obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a thin film manufacturing apparatus, and particularly to an improvement in a reaction gas supply/exhaust system for uniform film formation.

[Conventional technology]

2. Description of the Related Art There is a conventional thin film manufacturing apparatus shown in FIG. 5 that supplies a reaction gas into a reaction vessel, causes a gas phase chemical reaction to occur within the vessel, and deposits a reaction product as a thin film on a substrate.

This thin film manufacturing apparatus includes a sample holder 24 for setting a sample (substrate) 23 in a cylindrical reaction vessel 22 having a reaction gas supply port 21, and an exhaust port on the surface corresponding to the reaction gas supply port 21. 25, and a sample heating RF coil 26 is wound around the container.

An example of a device related to this type of device is described in Japanese Patent Application Laid-Open No. 63-53932.

In this thin film manufacturing apparatus, the surface of the sample 23 is set to be inclined with respect to the direction in which the reaction gas enters.
The surface of the sample 23 is also inclined with respect to the flow direction of the exhaust gas.

[Problem to be solved by the invention]

In the conventional apparatus described above, the gas introduced into the reaction vessel 22 from the reaction gas supply port 21 flows toward the sample 23. However, since the surface of the sample 23 is inclined, the reaction gas flows into the sample 23. After reaching , a turbulent flow occurs and the reaction gas no longer flows uniformly over the surface of the sample 23. In addition, RF for sample heating
When the sample 23 is heated through the coil 26, the reaction vessel 2
Convection occurs within 2, and the turbulence in the gas flow becomes increasingly large. As a result, there is a problem in that it is not possible to uniformly form a film on the sample 23.

An object of the present invention is to solve the problems of the prior art described above and to provide a thin film manufacturing apparatus that can form a uniform film by uniformizing the flow of gas to the surface of a sample.

[Means for solving the problem] The above purpose is to
This is achieved by providing an opening at the end of the gas supply pipe that allows gas to be introduced perpendicularly to the surface on which the thin sample film is deposited, and an exhaust port on the surface of the reaction vessel opposite to the surface on which the thin sample film is deposited. be done.

[Effect]

The gas introduced into the reaction vessel from the opening at the tip of the gas supply pipe flows down in the vertical direction. At this time, the gas is exhausted through the exhaust port provided on the side of the reaction vessel opposite to the side on which the thin film of the sample is deposited, so the gas that reaches the sample surface flows uniformly along the sample surface. It is discharged from the exhaust port. As a result, the thickness distribution of the thin film on the sample surface becomes uniform.

Also, place the tip opening of the gas supply pipe on the bottom side of the reaction vessel.
By arranging the exhaust ports at the top of the reaction vessel, which is a so-called "deposition up" system, turbulence of gas caused by convection due to heat during sample heating is prevented, and uniform film formation is more effective. At the same time, fine particles are prevented from adhering to the sample surface.

〔Example〕

Embodiments of the present invention will be described below based on the drawings.

FIG. 1 is a longitudinal sectional view showing a first embodiment of the thin film manufacturing apparatus of the present invention. This thin film manufacturing apparatus consists of a reaction vessel 29 in which a gas phase chemical reaction is carried out, a gas supply pipe 1 for supplying the gas inside the reaction vessel 1, a sample 3 in which a thin film is deposited on the surface thereof. Consisting of a sample holder 4 that holds the sample 3, an exhaust port 5 that suctions and exhausts gas and reaction products, a rotating shaft 6 that rotates the sample 3 via the sample holder 4, and a heater 7 that heats the sample 3. be done.

The gas supply pipe 1 is formed into a cylindrical shape, the upper part of which is installed vertically from the center of the upper part of the reaction vessel l formed into a substantially spherical shape, and the lower end of the pipe is provided with a funnel-shaped opening 1a. ing. The sample 3 is arranged vertically below the opening 1a at a predetermined interval, and the exhaust port 5 is provided with an opening 5a so as to surround the outer periphery of the sample 3.

In this thin film manufacturing apparatus, the gas supplied from the gas supply pipe 1a flows vertically while spreading horizontally through the opening 1a, and the gas that reaches the surface of the sample 3 flows outside the sample 3. It flows toward the peripheral area and is exhausted from the exhaust port 5. Therefore, the gas introduced into the reaction vessel 1 flows uniformly over the surface of the sample 3, making it possible to form a uniform film.

FIG. 2 shows a second embodiment of the thin film manufacturing apparatus of the present invention, in which a gas supply pipe 1 is provided at the bottom side of the reaction vessel 1, an exhaust port 5 is provided at the top side, and a sample is set in a sample holder 4. 3
The apparatus is the same as the thin film manufacturing apparatus shown in FIG. 1, except that it is of a so-called deposition-up type in which a thin film is deposited on the lower surface of the apparatus.

Therefore, in the second embodiment, the heater 7 is arranged at the upper side of the reaction vessel 2, and for example, the heater 7 is placed at the upper part of the reaction vessel 2, and the heater 7 is placed in the reaction vessel 2 at normal pressure.
When film formation is performed under conditions where the temperature of the sample 3 is 250° C. or higher, there is an effect that gas turbulence due to thermal convection in the temporal region of the surface (lower surface) of the sample 3 on which the thin film is deposited is reduced. Furthermore, since the second embodiment is of the devodisilane-up type, fine particles such as reaction products will not adhere to the sample surface and deteriorate the film quality.

FIG. 3 shows a third embodiment of the thin film manufacturing apparatus of the present invention, which is similar to that shown in FIG. This is the same as the first embodiment shown in FIG.

In the third embodiment, the gas from the opening 1a is transferred to the sample 3.
Flows perpendicularly to the surface side of the sample 3, and flows from the periphery of the sample 3 to the opening 5a.
It is then exhausted. Therefore, reaction products generated by ultraviolet energy are less likely to flow toward the light-transmitting window 8, preventing the light-transmitting window 8 from fogging, and improving reproducibility and yield.

FIG. 4 shows a fourth embodiment of the thin film manufacturing apparatus of the present invention, which differs from the first embodiment shown in FIG. It has an integrated structure with the container 12. Therefore, in addition to the effects of the first embodiment, the fourth embodiment has the advantage that the device structure is miniaturized and simplified, and maintenance is facilitated.

〔Effect of the invention〕

As described above, according to the present invention, the reaction gas flows perpendicularly to the surface of the sample on which a thin film is deposited and flows toward the sample periphery, so that the gas supply on the sample surface becomes uniform. Therefore, uniform film formation becomes possible, and reproducibility and yield are improved.

[Brief explanation of the drawing]

FIG. 1 is a vertical cross-sectional view showing a first embodiment of the thin film manufacturing apparatus of the present invention, FIG. 2 is a cross-sectional view showing a second embodiment of the thin film manufacturing apparatus of the present invention, and FIG. FIG. 4 is a vertical cross-sectional view showing a third embodiment of the manufacturing apparatus, FIG. 4 is a vertical cross-sectional view showing the fourth example of the thin film manufacturing apparatus of the present invention, and FIG. 5 is a vertical cross-sectional view of a conventional single-film manufacturing apparatus. . 1... Gas supply pipe, 2... Reaction container,
3...sample, 4...sample holder, 5.
...Exhaust port, 6... Rotation shaft, 7...
...Sample heating heater, 12...Reaction vessel. Agent: Patent Attorney Masaru Nishimoto Figure 1 Figure 3 Figure 2 Figure 4

Claims (3)

[Claims] (1) A reaction vessel in which a sample for depositing a thin film is set in a sample holder, and the reaction vessel is equipped with a gas supply port and an exhaust port, and the gas supply port is the surface on which the thin film of the sample is deposited. In contrast, the method is characterized in that it consists of an opening at the tip of a gas supply pipe that can introduce gas in a vertical direction, and that the exhaust port is provided on the surface of the reaction vessel opposite to the surface on which the thin film of the sample is deposited. thin film manufacturing equipment. (2) The thin film manufacturing apparatus according to claim (1), wherein the tip opening of the gas supply pipe is arranged on the upper side of the reaction vessel, and the exhaust port is arranged on the bottom side of the reaction vessel. . (3) The thin film manufacturing apparatus according to claim (1), wherein the tip opening of the gas supply pipe is arranged at the bottom side of the reaction vessel, and the exhaust port is arranged at the upper side of the reaction vessel. .