JPH02149668A - Thin film forming device - Google Patents

Abstract

PURPOSE:To form a thin film suitable for material with one set of equipment by providing a shared electrode of RF and DC to a plasma generating means and selectively connecting this shared electrode to an RF power source and a DC power source by a changeover means. CONSTITUTION:A shared electrode 24 of RF and DC is arranged in the space between an electron beam heating evaporation source 20 and a base plate holder 12. When an RF power source 16 is connected to the shared electrode 24, plasma resulting from RF discharge is generated around the shared electrode 24. When a DC power source 22 is connected to the shared electrode 24, plasma resulting from DC discharge is generated. A changeover means 25 is connected to the shared electrode 24 and selectively connected to the RF power source 16 and the DC power source 22. A base plate 13 is cleaned by RF discharge or DC glow discharge. RF discharge stable in discharge is utilized at a time for vapor- depositing low-m.p. Cu, etc. The DC power source 22 side is selected at a time for vapor-depositing Ti, etc., and ion plating resulting from DC discharge good in degree of ionization is performed.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a thin film forming apparatus such as an ion blating apparatus or a sputtering apparatus.

[Prior Art] Generally, in thin film forming apparatuses such as ion blating apparatuses and sputtering apparatuses, plasma is generally generated in a predetermined area within a vacuum container to form a thin film on a substrate.

For example, in an ion blating device, in a vacuum container,
An evaporation source and a substrate holder are arranged with a predetermined space between them, and a plasma generating means for generating plasma in the space is provided, the evaporation particles evaporated from the evaporation source are ionized by the plasma, and the ionized particles are is attached to the substrate held by the substrate holder.

Conventionally, in this type of ion blating apparatus, the plasma generating means includes an RF (radio frequency) electrode disposed in the space, connected to an RF constant power source, and generating plasma by RF discharge as the plasma. A DC type is used, and a DC type is used, in which a DC (direct current) electrode is placed in the space, a DC power source is connected to the electrode, and plasma is generated by DC discharge as the plasma.

FIG. 5 shows an ion blating device equipped with RF type plasma generation means. This ion brating device is disclosed in Japanese Patent Publication No. 52-29971, and includes a resistance heating evaporation source 11 (or an electron beam heating evaporation source) placed in a vacuum container 10 with a predetermined space. (good) and a substrate holder 12. The substrate holder 12 is used to hold a substrate 13 on which a thin film is to be formed, and at the same time, it is applied with a negative potential rather than the ground potential by a DC power supply 14 and acts as a cathode. An RF electrode 15 is arranged between the resistance heating evaporation source 11 and the substrate holder 12, and the RF electrode 15 includes:
RF power i1*16 is connected. The exhaust port 17 of the vacuum container 10 is connected to an exhaust device (not shown) that evacuates and maintains the inside of the vacuum container 10 to a predetermined degree of vacuum. The gas introduction means 18 is for introducing into the vacuum container 10 an introduction gas (for example, an inert gas such as argon) necessary to generate plasma in the vacuum container 10 . The resistance heating evaporation source 11 is connected to an AC power source 19 to evaporate evaporated particles.

This ion blating device is operated as follows. After the inside of the vacuum device 10 is evacuated to a predetermined degree of vacuum by the evacuation device, the vacuum is maintained by continuing to evacuate by the evacuation device while introducing the introduction gas from the gas introduction means 18.

In this state, when the RF power supply 16, DC power supply 14, and AC power supply 19 are turned on, RF
Plasma is generated. The evaporated particles evaporated from the resistance heating evaporation source 11 are ionized by the RF plasma, and the ionized particles are attracted by the negative potential applied to the substrate holder 12 and adhere to the substrate 13.

On the other hand, FIG. 6 shows an ion brating apparatus equipped with a DC type plasma generating means. This ion blating apparatus is substantially different from the ion brating apparatus shown in FIG. An electrode 21 is used, and the DC
A DC power source 22 is connected to the DC electrode 21 so that a positive potential with respect to the ground potential is applied to the electrode 21. When the DC power supply 22 is turned on, the housing of the electron beam heating evaporation source 20 is grounded, so the DC
C plasma is generated between the electrode 21 and the casing of the electron beam heating evaporation source 20 as shown by a number of dots.

The DC electrode 21 has a large number of through holes extending in the vertical direction of the drawing. The shutter 23 has a first position shown, which prevents the evaporated particles evaporated from the electron beam heating evaporation source 20 from moving in the direction of the substrate holder 12, and a second position, which allows these evaporated particles to move in the direction of the substrate holder 12. It is movable between two positions. Hereinafter, moving the shirt starter 23 to the first and second positions will be described as follows.
The shutter 23 is expressed as "closed" and "opened".

In this structure, the electron beam heating evaporation source 20 is turned on with the shutter 23 closed, and the evaporated particles are evaporated from the electron beam heating evaporation source 20. When the evaporation of the evaporated particles from the electron beam heating evaporation source 20 becomes stable, the shutter 23 is opened. As a result, the evaporated particles are
The ionized particles are ionized by the plasma and are attracted by the negative potential applied to the substrate holder 12 and adhere to the substrate 13 through the through hole of the DC electrode 21 .

An ion brating device equipped with such C-type plasma generation means is, for example, disclosed in Japanese Patent Publication No. 56-4415.
It is disclosed in Publication No. 0.

[Problems to be Solved by the Invention] As described above, the ion blating apparatus equipped with the RF type plasma generation means as shown in FIG. An RF electrode 15 is arranged to create an RF electric field, and plasma is generated by RF discharge in the area to ionize the evaporated particles. On the other hand,
As described above, the ion brating apparatus equipped with C-type plasma generation means as shown in FIG. is actively used to create a DC arc discharge region between the electron beam heating evaporation source 20 and the DC electrode 21 and ionize the evaporated particles.
A higher ionization rate can be obtained than in the case shown in the figure. The RF type ion blating device shown in FIG. 5 is similar to the device shown in FIG.
It is also known that even if 0 is used, the ionization rate is not as good as the DC type ion brating device shown in FIG. 6, which uses DC arc discharge.

In this way, the RF type ion brating device
Because the ionization rate is low, for the creation of hard films such as TiN,
Although it is unsuitable in terms of film quality and film adhesion, since the temperature rise of the substrate is low, it has a wide range of applications such as electronic materials, optical films (ITO), and organic films.

Further, as the evaporation source, either a resistance heating evaporation source or an electron beam heating evaporation source can be used.

On the other hand, DC type ion blating equipment has a high ionization rate and is suitable for creating hard films such as TiN, but it requires an electron beam source and other evaporation sources, such as resistance heating (boat (Formula) is unsuitable for evaporation sources due to lack of thermionic electrons.

As mentioned above, RF type ion blating equipment and DC type ion blating equipment each have their advantages and disadvantages, and in order to obtain various high quality thin films,
It was necessary to prepare at least one RF type ion blating device and one DC type ion blating device.

Conventionally, during sputtering, similarly, depending on the material to be created, RF sputtering equipment that uses RF discharge with a low ionization rate and DC sputtering equipment that uses a high ionization rate
DC sputtering equipment that uses electrical discharge is used, and in order to obtain various high-quality thin films, it is necessary to prepare at least one RF sputtering equipment and one DC sputtering equipment. I needed to.

An object of the present invention is to provide a thin film forming apparatus that can be used both as an RF method and as a DC method.

[Means for solving the problem] According to the present invention, a predetermined space is placed in a vacuum container,
An evaporation source and a substrate holder are arranged, and a plasma generation means for generating plasma in the space is provided, the evaporation particles evaporated from the evaporation source are ionized by the plasma, and the ionized particles are held by the substrate holder. In the thin film forming apparatus, the plasma generating means is arranged in the space, and when an RF power source is connected, generates plasma by RF discharge as the plasma, and generates plasma by RF discharge as the plasma.
When the C power source is connected, one of the RFfK source and the DC power source is selectively connected to the RF and DC common electrode that generates plasma by DC discharge as the plasma, and the RF and DC common electrode. There is obtained a thin film forming apparatus characterized in that it includes a switching means for switching.

Further, according to the present invention, the vacuum container includes a target and a substrate holder arranged with a predetermined space between them, and a plasma generating means for generating plasma in the space, and the target and the substrate holder are provided to generate plasma in the space, and the target and the substrate holder are provided to generate plasma in the space. In a thin film forming apparatus configured to cause sputtered particles from the target generated by collision with a substrate to adhere to a substrate held by the substrate holder, the plasma generating means includes a surface of the target facing the substrate holder; is provided on the opposite surface, and when connected to the RF main power source, generates plasma by RF discharge as the plasma, and
and a switching means for selectively connecting one of the RF main power source and the DC power source to the electrode. A thin film forming apparatus characterized by the following can be obtained.

[Embodiments] Next, embodiments of the present invention will be described with reference to the drawings.

Referring to FIG. 1, the thin film forming apparatus according to the first embodiment of the present invention is an ion brating apparatus, and includes an RF and It has a DC common electrode 24. This RF and DC common electrode 24 generates plasma around the RF and DC common electrode 24 when the RFF source 16 is connected, and generates plasma around the RF and DC common electrode 24 when the DC power source 22 is connected. A plasma can be generated around the plasma by DC discharge, for example, in a spiral shape as shown in FIG. R like this
By using the F and DC common electrode 24, a stable discharge state can be maintained in both RF discharge and DC discharge, even in a high vacuum on the order of 10-' Torr.

In FIG. 1, the RF and DC common electrode 24 is connected to one of the RFF source 16 and the DC power source 22.
A selectively connecting switching means 25 is coupled. The switching means 25 is connected to the vacuum vessel 10 by a joint portion 26.
The matching box 27 is connected to the inside, and the matching box 27 is provided with output terminals connected to RF and D.
A switching device 28 connected to the C common electrode 24 and having a DC side input terminal connected to the DC power supply 22, and a matching box 2.
7, and RF? ¥! RF source 16 and switch 28
It has a series connection circuit of a capacitor 29 and a coil 30 connected between the side large input terminals. capacitor 2
The series connection circuit of 9 and the coil 30 is for impedance matching when RF power is introduced into the vacuum vessel 10 from the atmosphere. Matching Bo Soks 2
7 is provided with a radio wave seal to prevent the influence of radio waves into the vacuum container 10.

In addition to FIG. 1, referring also to FIG. 2 which shows part A of FIG. 1, cooling water is from the outside of the matching box 27, the coil 3
0 and the bypass vinyl tube 31, the cooling water is led to the inside of the RF and DC common electrode 24, and from there, the cooling water is discharged to the outside of the matching box 27 through the reverse route to that described above. In addition, the RF of the switch 28
The side large input terminal and output terminal are connected via a bypass vinyl tube 31, but since the bypass vinyl tube 31 is an electrical insulator, the switching device 28
It is not electrically connected to the RF side large input terminal output terminal. 32 in FIG. 3 is a vacuum seal portion.

Referring to FIG. 1, the operation of forming a thin film using the present ion blating apparatus will be described.

First, with the shutter 23 closed, the substrate 13 is cleaned by ion bombardment as a pretreatment. In this case, the substrate 13 is cleaned by RF discharge from the RF power source 16 or DC glow discharge from the DC power sources 22 and 14. Next, for example, when depositing Cu having a low melting point, RF discharge is used because the discharge is stable even for low melting point materials. Also,
For example, when depositing Ti, the switch 28
2 side is selected, and ion blating is performed by DC discharge with a high ionization rate. Note that the substrate holder 12 is rotated along arrow H during the pretreatment and vapor deposition treatment described above.

Referring to FIG. 4, the thin film forming apparatus according to the second embodiment of the present invention is a sputtering apparatus, and a vacuum vessel 1
Target 3 placed with a predetermined space within 0
3 and a substrate holder 12. This sputtering device generates plasma in the space, and causes sputtered particles from the target 33 generated by collision of ions in the plasma with the target 33 to adhere to the substrate 13 held by the substrate holder 12. It is something.

The substrate holder 12 is grounded via the vacuum container 10. An electrode 34 called a magnetron cathode is provided on the surface of the target 33 opposite to the surface facing the substrate holder 12. The electrode 34 includes a magnetron cathode body 35 and a magnetron cathode body 35.
It has a magnet 36 provided inside. Coupled to this electrode 34 is a switching means 25 similar to that of FIG. 1 for selectively connecting the RF power supply 16 and -B of the DC power supply 22 to the electrode 34.

The electrode 34 is connected to the RF
When connected to the power source 16, plasma is generated between the electrode 34 and the substrate holder 12 by RF discharge. In this state, the sputtering device works as an RF magnetron sputtering device. On the other hand, the electrode 34
is set to DC by the switch 28? When connected to the Ii source 22, plasma is generated between the electrode 34 and the substrate holder 12 due to DC discharge. At this time, this sputtering device works as a DC magnetron sputtering device.

Note that 37 is an earth shield, and 38 is an insulator.

In this sputtering apparatus as well, the switching means 25 can select either RF discharge with a low ionization rate or DC discharge with a high ionization rate depending on the material to be produced.

[Effects of the Invention] As explained above, according to the present invention, since either the RF discharge or the DC discharge suitable for the material to be produced can be selected by the switching means, the RF discharge can be performed using - It is possible to create thin films using DC discharge and DC discharge, which has great economical effects.

4 is a schematic diagram of a thin film forming apparatus according to a second embodiment of the present invention, FIG. 5 is a schematic diagram of a conventional RF type ion blating apparatus, and FIG. 6 is a schematic diagram of a conventional DC type ion blating apparatus. It is a schematic diagram of a rating device.

10 is a vacuum container, 11 is a resistance heating evaporation source, 12 is a substrate holder, 13 is a substrate, 14 is a DC power source, 15 is an RF electrode, 16 is an RF power source, 16 is a gas introduction means, 20 is an electron beam heating evaporation source, 21 is a DC electrode, 22 is a DC power supply, 24 is an RF and DC common electrode, 25 is a switching means, 2
7 is a matching box, 28 is a switch, 33 is a target, 34 is an electrode (magnetron cathode), 35 is a magnetron cathode body, and 36 is a magnet.

[Brief explanation of the drawing]

FIG. 1 is a schematic diagram of a thin film forming apparatus according to a first embodiment of the present invention, and FIG.
FIG. 3 is a plan view showing an example of the DC common electrode, and FIG. 3 is a detailed view of part A in FIG. 1.

Claims (1)

[Claims] 1. An evaporation source and a substrate holder arranged in a predetermined space in a vacuum container, and a plasma generating means for generating plasma in the space, the evaporation source being evaporated from the evaporation source. In a thin film forming apparatus that ionizes evaporated particles by the plasma and causes the ionized particles to adhere to a substrate held by the substrate holder, the plasma generating means is disposed in the space and connected to an RF power source. At times, plasma is generated by RF discharge as the plasma, and D
When the C power source is connected, an RF and DC common electrode that generates plasma by DC discharge as the plasma, and one of the RF power source and the DC power source is selectively connected to the RF and DC common electrode. 1. A thin film forming apparatus comprising a switching means for switching. 2. A vacuum container includes a target and a substrate holder placed in a predetermined space, and a plasma generating means for generating plasma in the space, the plasma being generated by collision of ions in the plasma with the target. In the thin film forming apparatus, the plasma generating means is configured to cause sputtered particles from the target to adhere to a substrate held by the substrate holder, wherein the plasma generating means is configured to attach sputtered particles from the target to a surface opposite to the surface facing the substrate holder. When the RF power source is connected, plasma is generated by RF discharge as the plasma, and D
and a switching means for selectively connecting one of the RF power source and the DC power source to the electrode. Characteristic thin film production equipment.