JPH0196073A - Method for brazing diamond - Google Patents
Method for brazing diamondInfo
- Publication number
- JPH0196073A JPH0196073A JP25586487A JP25586487A JPH0196073A JP H0196073 A JPH0196073 A JP H0196073A JP 25586487 A JP25586487 A JP 25586487A JP 25586487 A JP25586487 A JP 25586487A JP H0196073 A JPH0196073 A JP H0196073A
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- brazing
- metal
- carbonitride
- vapor phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010432 diamond Substances 0.000 title claims abstract description 51
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 47
- 238000005219 brazing Methods 0.000 title claims abstract description 25
- 238000000034 method Methods 0.000 title claims description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 33
- 239000002184 metal Substances 0.000 claims abstract description 33
- 239000012808 vapor phase Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 6
- 238000003786 synthesis reaction Methods 0.000 claims abstract description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 6
- 238000001308 synthesis method Methods 0.000 claims description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 229910001882 dioxygen Inorganic materials 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims 1
- 239000011248 coating agent Substances 0.000 abstract description 5
- 238000000576 coating method Methods 0.000 abstract description 5
- 239000000945 filler Substances 0.000 abstract 2
- 238000007747 plating Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 8
- 239000011247 coating layer Substances 0.000 description 7
- 239000010410 layer Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 150000001247 metal acetylides Chemical class 0.000 description 3
- 230000006911 nucleation Effects 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 208000037998 chronic venous disease Diseases 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005087 graphitization Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 239000002345 surface coating layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Adornments (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Ceramic Products (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、ダイヤモンドドレッサー、ダイヤモンドメタ
ルボンド砥石、ダイヤモンドメタルボンド切断砥石、ダ
イヤモンド単結晶バイト及びダイヤモンド宝飾品の分野
に利用できるダイヤモンドの鑞付は方法に関するもので
ある。[Detailed Description of the Invention] [Industrial Application Field] The present invention provides a diamond brazing method that can be used in the fields of diamond dressers, diamond metal bond grinding wheels, diamond metal bond cutting wheels, diamond single crystal cutting tools, and diamond jewelry. It is about the method.
ダイヤモンド粉末、CBN粉末を主成分とする焼結体、
ダイヤモンド単結晶およびCBN単結晶等を金属シャン
クに鑞付けする手段として、Ni等を電解又は無電解メ
ツキとを組み合わせたメツキを施し、該メツキ層を介し
て金属シャンクに鑞付けする事が広く行われている。Sintered body mainly composed of diamond powder and CBN powder,
As a means of brazing diamond single crystals, CBN single crystals, etc. to metal shanks, it is widely practiced to apply plating using a combination of electrolytic or electroless plating with Ni, etc., and to braze the metal shanks through the plating layer. It is being said.
また、特開昭60−155600号に示されたようなチ
タンやクロムなどの金属をイオンプレーティング法で被
覆してダイヤモンドとヒートシンクとの接合強度を高め
る方法が知られている。Furthermore, a method is known in which the bonding strength between the diamond and the heat sink is increased by coating the diamond with metal such as titanium or chromium by ion plating, as disclosed in JP-A-60-155600.
従来の金属メツキと鑞付けを組み合わせる方法では、メ
ツキ層の硬度が充分でない為にメツキ層に塑性変形が生
じたり、メツキ層と基材界面との密着力が弱く、被鑞付
物質の脱落が問題であった。In the conventional method of combining metal plating and brazing, the hardness of the plating layer is not sufficient, resulting in plastic deformation of the plating layer, and the adhesion between the plating layer and the base material interface is weak, causing the material to be brazed to fall off. It was a problem.
また、特開昭60−155600号に示された方法では
、クロムやチタン等表面が酸化されやすい金属を用いる
ために、通常の鑞付材との接着強度はさほど高いもので
はなかった。Furthermore, in the method disclosed in JP-A-60-155600, since a metal whose surface is easily oxidized, such as chromium or titanium, is used, the adhesive strength with ordinary brazing materials is not so high.
上記問題の解決に、従来の金属メツキの代わりに、硬度
が高く、被メツキ材との密着力に優れ、しかも鑞付との
濡れ性に優れる金属炭化物または金属炭窒化物を気相合
成法により被覆することが望ましいことがわかった。こ
れらの物質としては、Ti、 Zr、 Hf、 V、
Nb、 Ta、 Cr、 MoおよびWの金属炭化物
、金属炭窒化物が望ましい。なかでもTiの化合物を用
いた場合は特に以下の点で良好な結果が得られる。To solve the above problems, instead of conventional metal plating, metal carbide or metal carbonitride, which has high hardness, excellent adhesion to the plated material, and excellent wettability with brazing, was synthesized using a vapor phase synthesis method. It has been found that coating is desirable. These substances include Ti, Zr, Hf, V,
Metal carbides and metal carbonitrides of Nb, Ta, Cr, Mo and W are preferable. Among them, when a Ti compound is used, particularly good results can be obtained in the following respects.
例えば、TiCやTiCNをダイヤモンドに被覆した場
合には、これらの被覆層とダイヤモンドの接合強度が高
く、かつ鑞付との濡れ性が向上する。For example, when diamond is coated with TiC or TiCN, the bonding strength between the coating layer and the diamond is high, and the wettability with brazing is improved.
従って金属基体との鑞付は強度が高くなる。Therefore, the strength of the brazing with the metal substrate is increased.
また、これらの化合物は硬度が高いので、力を受けた時
変形が殆どなく、従って多数回の衝撃を受けたとしても
、接合強度は維持される。金属の炭化物、炭窒化物等を
ダイヤモンドに被覆する方法としては、基材表面への該
化合物のつき回り性、及び基材のダイヤモンドの品質劣
化防止の為に1000℃以下でCVD法によりメツキを
行ういわゆる気相合成法が特性上最も優れている。Furthermore, since these compounds have high hardness, they hardly deform when subjected to force, and therefore the bonding strength is maintained even if subjected to multiple impacts. As a method of coating diamond with metal carbides, carbonitrides, etc., plating is carried out using the CVD method at a temperature of 1000°C or less in order to ensure that the compound spreads over the surface of the base material and to prevent quality deterioration of the diamond base material. The so-called gas-phase synthesis method is the most superior in terms of characteristics.
更に基材とメツキ層との密着度を向上させる為には、メ
ツキ層を形成する前段階で予め水素ガス、酸素ガスの一
層または二種の混合ガス、或いはそれ等のガスとアルゴ
ン、窒素等の不活性ガスとの混合ガスを放電状態にする
ことにより、イオンを発生させ且つ加速し、基材表面に
衝突させて、表面に微細な欠陥を形成する、いわゆるイ
オンエツチング法で前処理し、表面に均一にサブミクロ
ンの凹凸を形成することが望ましい。Furthermore, in order to improve the degree of adhesion between the base material and the plating layer, before forming the plating layer, one layer or a mixture of hydrogen gas, oxygen gas, or a mixture of these gases and argon, nitrogen, etc. Pretreatment is carried out using the so-called ion etching method, in which ions are generated and accelerated by bringing a mixed gas with an inert gas into a discharge state, and collide with the surface of the substrate to form minute defects on the surface. It is desirable to uniformly form submicron irregularities on the surface.
こうすることにより、被覆層の炭化物または炭窒化物が
基材表面で核生成する際の生成密度が増大し、その結果
として被覆層と基材との密着性が向上する。By doing so, the density of nucleation of the carbide or carbonitride of the coating layer on the surface of the substrate increases, and as a result, the adhesion between the coating layer and the substrate improves.
なお、1000℃以下でCVD法により気相合成する手
段としては、彼■物質が金属炭化物又は金属炭窒化物で
あるので、1000℃以下の低い温度で該化合物を容易
に合成できるプラズマCVD法を用いることが一層望ま
しい。また350℃以下では被覆層とダイヤモンドの接
合強度が低下する。As a means of vapor phase synthesis using the CVD method at temperatures below 1000°C, since the substance is a metal carbide or metal carbonitride, the plasma CVD method, which can easily synthesize the compound at a low temperature below 1000°C, is recommended. It is more desirable to use Further, below 350° C., the bonding strength between the coating layer and diamond decreases.
以上記載した技術的手段の作用について以下に記す。 The effects of the technical means described above will be described below.
■ CVD法を用いて気相メツキをする効果ダイヤモン
ドは立体状のものが一般的で、その全面に均一な厚みに
被覆する必要があるが、他の方法に比較してCVD法が
その点に於て勝っている。またダイヤモンドは比較的に
寸法の小なるものが多く(最大径で数1、大きくても1
0mm程度)、治具の上に並べるだけで気相処理が可能
な上記の方法が生産性の面でも好ましい。■ Effects of vapor phase plating using the CVD method Diamond is generally three-dimensional, and it is necessary to coat the entire surface with a uniform thickness, but the CVD method has advantages in this respect compared to other methods. I am winning. In addition, many diamonds are relatively small in size (the maximum diameter is several 1, the largest is 1
0 mm), and the above-mentioned method, which allows vapor phase treatment by simply arranging them on a jig, is preferable in terms of productivity.
■ CVD処理前段階でのイオンエツチング処理の作用
既述の通り、CVD法による金属炭化物或いは金属炭窒
化物の被覆層の生成の鍵を握っているのは該被覆層の粒
度であり、更に底密に言えば初期の核形成が安定化する
臨界核の大きさである。この臨界核の形成を促進し、核
生成密度を大とする為には基材表面にピット状の窪み等
の欠陥を形成してやる必要がある。こうすることにより
後に続く被覆層が密着力良くダイヤモンドに形成される
。■ Effect of ion etching treatment at the stage before CVD treatment As mentioned above, the key to the formation of a metal carbide or metal carbonitride coating layer by the CVD method is the particle size of the coating layer. Specifically speaking, it is the size of the critical nucleus that stabilizes the initial nucleation. In order to promote the formation of this critical nucleus and increase the nucleation density, it is necessary to form defects such as pit-like depressions on the surface of the base material. This allows the subsequent coating layer to be formed on the diamond with good adhesion.
■ プラズマCVD法を用いて被覆する効果ダイヤモン
ドは、H,ガス中又は真空中では1200℃近傍に加熱
すると黒鉛化が進行し、ダイヤモンドの特性を失う。従
って減圧水素ガス雰囲気中で反応を行うCVD法でダイ
ヤモンドを安定して被覆するには1000℃以下で処理
することが前提条件となる。(2) Effect of Coating Using Plasma CVD When diamond is heated to around 1200° C. in H, gas or vacuum, graphitization progresses and it loses its properties as diamond. Therefore, in order to stably coat diamond with the CVD method in which the reaction is carried out in a reduced pressure hydrogen gas atmosphere, it is a prerequisite that the treatment be performed at a temperature of 1000° C. or lower.
しかし乍ら、CVD法では金属炭化物や金属炭窒化物の
気相合成反応を1000℃以下の比較的低温で生ぜしめ
ることが困難であり、より低温での反応を可能とするプ
ラズマCVD法が本目的には更に適当である。However, with the CVD method, it is difficult to produce a gas phase synthesis reaction of metal carbides and metal carbonitrides at relatively low temperatures below 1000°C, and the plasma CVD method, which enables reactions at lower temperatures, is the main method. It is more suitable for the purpose.
なお本願の方法は、天然ダイヤモンド、人工ダイヤモン
ドや多結晶ダイヤモンドにも応用可能であるが、特に接
合強度を要求されるダイヤモンドドレッサー等の分野で
有効である。The method of the present invention can be applied to natural diamonds, artificial diamonds, and polycrystalline diamonds, but is particularly effective in fields such as diamond dressers that require high bonding strength.
以下実施例を記し、本発明の詳細な説明する。 The present invention will be described in detail below with reference to Examples.
〔実施例1〕
ダイヤモンド表面を気相合成法により処理し、ダイヤモ
ンドドレッサーを試作した。[Example 1] A diamond dresser was prototyped by treating the diamond surface using a vapor phase synthesis method.
鑞付けは真空あるいは雲囲気ガス中で700〜800℃
で実施した。ダイヤモンド表面の炭化度質相は認められ
なかった。また鑞付は強度は、従来法であるNiメツキ
したダイヤモンドに比較し3〜4倍に達し、実使用中で
のダイヤモンドの欠落はまったく認められなかった。Brazing is done at 700-800℃ in vacuum or cloudy gas.
It was carried out in No carbonized phase was observed on the diamond surface. The brazing strength was 3 to 4 times higher than Ni-plated diamond, which is the conventional method, and no diamond was observed to be missing during actual use.
鑞付は部分は、従来法では低密着を補うため、第2図の
様にダイヤモンド1を鑞付2を介し、ホルダー3にて補
強し、固定していた。In the brazing part, in order to compensate for the low adhesion in the conventional method, diamond 1 was reinforced and fixed with a holder 3 through brazing 2 as shown in Fig. 2.
第1図に示す様に、ダイヤモンド5に気相合成法を用い
TiCを処理することにより、鑞付6を介して、ホルダ
7への接着力が増加し、第2図のようなホルダーによる
補強の必要がなくなる。As shown in Fig. 1, by treating the diamond 5 with TiC using a vapor phase synthesis method, the adhesion force to the holder 7 is increased through the brazing 6, and reinforcement by the holder as shown in Fig. 2 is achieved. There is no need for
その結果、利用できるダイヤモンドの有効体積が増加、
3〜4倍の長寿命化が達成された。As a result, the effective volume of available diamond increases,
A 3 to 4 times longer life was achieved.
第1図は、本願発明を用いた場合のダイヤモンドドレッ
サーであり、第2図は従来の例である。
図中、 1.5: ダイヤモンド
2.6: 鑞付
3.7: ホルダー
4 : 表面被覆層
し、j−1FIG. 1 shows a diamond dresser using the present invention, and FIG. 2 shows a conventional example. In the figure, 1.5: Diamond 2.6: Brazed 3.7: Holder 4: Surface coating layer, j-1
Claims (5)
て、ダイヤモンド表面に350℃以上、1000℃以下
の温度で気相合成法により金属炭化物又は金属炭窒化物
を被覆した後、鑞付を用いて金属基体と該ダイヤモンド
を鑞付けすることを特徴とするダイヤモンドの鑞付け方
法。(1) In the method of brazing diamond to a metal substrate, the diamond surface is coated with metal carbide or metal carbonitride by vapor phase synthesis at a temperature of 350°C or higher and 1000°C or lower, and then the metal is coated with metal carbide or metal carbonitride using brazing. A method for brazing diamond, comprising brazing a substrate and the diamond.
又は炭窒化物であることを特徴とする特許請求の範囲第
(1)項記載のダイヤモンドの鑞付け方法。(2) The diamond brazing method according to claim (1), wherein the metal carbide or metal carbonitride is a Ti carbide or carbonitride.
許請求の範囲第(1)項記載のダイヤモンドの鑞付け方
法。(3) The diamond brazing method according to claim (1), wherein the vapor phase synthesis method is a CVD method.
とする特許請求の範囲第(1)項記載のダイヤモンドの
鑞付け方法。(4) The diamond brazing method according to claim (1), wherein the vapor phase synthesis method is a plasma CVD method.
スの1種または2種のガス、またはこれに不活性ガスと
してAr、N_2を混合した混合ガスを用いてエッチン
グすることを特徴とする特許請求の範囲第(1)項記載
のダイヤモンドの鑞付け方法。(5) A patent claim characterized in that the diamond is pre-treated by etching using one or both of hydrogen gas and oxygen gas, or a mixed gas containing Ar and N_2 as an inert gas. A diamond brazing method according to item (1).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25586487A JPH0196073A (en) | 1987-10-08 | 1987-10-08 | Method for brazing diamond |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25586487A JPH0196073A (en) | 1987-10-08 | 1987-10-08 | Method for brazing diamond |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0196073A true JPH0196073A (en) | 1989-04-14 |
Family
ID=17284642
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP25586487A Pending JPH0196073A (en) | 1987-10-08 | 1987-10-08 | Method for brazing diamond |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0196073A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0480878A2 (en) * | 1990-10-12 | 1992-04-15 | Centre Suisse D'electronique Et De Microtechnique S.A. | Cubic boron nitride (CBN) abrasive tool |
JPH0584668A (en) * | 1991-04-03 | 1993-04-06 | Noritake Co Ltd | Polishing tool for chamfering internal periphery |
JPWO2007069668A1 (en) * | 2005-12-14 | 2009-05-21 | 並木精密宝石株式会社 | Shank and diamond scriber using it |
JP2011527979A (en) * | 2007-07-17 | 2011-11-10 | エレメント シックス リミテッド | Method for bonding SiC-diamond |
JP2014121608A (en) * | 2012-12-21 | 2014-07-03 | Omega Sa | Decorative piece produced by setting on amorphous metal |
US9194189B2 (en) | 2011-09-19 | 2015-11-24 | Baker Hughes Incorporated | Methods of forming a cutting element for an earth-boring tool, a related cutting element, and an earth-boring tool including such a cutting element |
JPWO2019155749A1 (en) * | 2018-02-08 | 2020-12-03 | 住友電気工業株式会社 | Super-abrasive grain and super-abrasive wheel |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6324002A (en) * | 1986-02-14 | 1988-02-01 | Sumitomo Electric Ind Ltd | Hard sintered body for tool and cutting tool |
JPS6328501A (en) * | 1986-06-27 | 1988-02-06 | サンドビツク アクテイエボラ−グ | Brazing article of coating cemented carbide or coating ceramics |
-
1987
- 1987-10-08 JP JP25586487A patent/JPH0196073A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6324002A (en) * | 1986-02-14 | 1988-02-01 | Sumitomo Electric Ind Ltd | Hard sintered body for tool and cutting tool |
JPS6328501A (en) * | 1986-06-27 | 1988-02-06 | サンドビツク アクテイエボラ−グ | Brazing article of coating cemented carbide or coating ceramics |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0480878A2 (en) * | 1990-10-12 | 1992-04-15 | Centre Suisse D'electronique Et De Microtechnique S.A. | Cubic boron nitride (CBN) abrasive tool |
JPH0584668A (en) * | 1991-04-03 | 1993-04-06 | Noritake Co Ltd | Polishing tool for chamfering internal periphery |
JPWO2007069668A1 (en) * | 2005-12-14 | 2009-05-21 | 並木精密宝石株式会社 | Shank and diamond scriber using it |
JP4565135B2 (en) * | 2005-12-14 | 2010-10-20 | 並木精密宝石株式会社 | Shank and diamond scriber using it |
JP2011527979A (en) * | 2007-07-17 | 2011-11-10 | エレメント シックス リミテッド | Method for bonding SiC-diamond |
US8757472B2 (en) | 2007-07-17 | 2014-06-24 | David Patrick Egan | Method for joining SiC-diamond |
US9194189B2 (en) | 2011-09-19 | 2015-11-24 | Baker Hughes Incorporated | Methods of forming a cutting element for an earth-boring tool, a related cutting element, and an earth-boring tool including such a cutting element |
US9771497B2 (en) | 2011-09-19 | 2017-09-26 | Baker Hughes, A Ge Company, Llc | Methods of forming earth-boring tools |
JP2014121608A (en) * | 2012-12-21 | 2014-07-03 | Omega Sa | Decorative piece produced by setting on amorphous metal |
JPWO2019155749A1 (en) * | 2018-02-08 | 2020-12-03 | 住友電気工業株式会社 | Super-abrasive grain and super-abrasive wheel |
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