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JPH0196073A - Method for brazing diamond - Google Patents

Method for brazing diamond

Info

Publication number
JPH0196073A
JPH0196073A JP25586487A JP25586487A JPH0196073A JP H0196073 A JPH0196073 A JP H0196073A JP 25586487 A JP25586487 A JP 25586487A JP 25586487 A JP25586487 A JP 25586487A JP H0196073 A JPH0196073 A JP H0196073A
Authority
JP
Japan
Prior art keywords
diamond
brazing
metal
carbonitride
vapor phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP25586487A
Other languages
Japanese (ja)
Inventor
Akira Doi
陽 土居
Akio Katsura
桂 彰男
Sadahiko Hisamatsu
久松 定彦
Osamu Imai
修 今井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Noritake Co Ltd
Nissin Electric Co Ltd
Sumitomo Electric Industries Ltd
Original Assignee
Noritake Co Ltd
Nissin Electric Co Ltd
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Noritake Co Ltd, Nissin Electric Co Ltd, Sumitomo Electric Industries Ltd filed Critical Noritake Co Ltd
Priority to JP25586487A priority Critical patent/JPH0196073A/en
Publication of JPH0196073A publication Critical patent/JPH0196073A/en
Pending legal-status Critical Current

Links

Landscapes

  • Adornments (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Ceramic Products (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To increase the brazing strength of diamond to a metal substrate by coating the surface of the diamond with a metal carbide or carbonitride by vapor phase synthesis in a specified temp. range and by brazing the diamond to the substrate with a brazing filler metal. CONSTITUTION:The surface of diamond 5 is coated with a metal carbide or carbonitride 4 by vapor phase synthesis at 350-1000 deg.C. The diamond 5 is then brazed to a holder 7 with a brazing filler metal 6. The bonding strength is increased and the effective volume of the diamond can be increased.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、ダイヤモンドドレッサー、ダイヤモンドメタ
ルボンド砥石、ダイヤモンドメタルボンド切断砥石、ダ
イヤモンド単結晶バイト及びダイヤモンド宝飾品の分野
に利用できるダイヤモンドの鑞付は方法に関するもので
ある。
[Detailed Description of the Invention] [Industrial Application Field] The present invention provides a diamond brazing method that can be used in the fields of diamond dressers, diamond metal bond grinding wheels, diamond metal bond cutting wheels, diamond single crystal cutting tools, and diamond jewelry. It is about the method.

〔従来の技術〕[Conventional technology]

ダイヤモンド粉末、CBN粉末を主成分とする焼結体、
ダイヤモンド単結晶およびCBN単結晶等を金属シャン
クに鑞付けする手段として、Ni等を電解又は無電解メ
ツキとを組み合わせたメツキを施し、該メツキ層を介し
て金属シャンクに鑞付けする事が広く行われている。
Sintered body mainly composed of diamond powder and CBN powder,
As a means of brazing diamond single crystals, CBN single crystals, etc. to metal shanks, it is widely practiced to apply plating using a combination of electrolytic or electroless plating with Ni, etc., and to braze the metal shanks through the plating layer. It is being said.

また、特開昭60−155600号に示されたようなチ
タンやクロムなどの金属をイオンプレーティング法で被
覆してダイヤモンドとヒートシンクとの接合強度を高め
る方法が知られている。
Furthermore, a method is known in which the bonding strength between the diamond and the heat sink is increased by coating the diamond with metal such as titanium or chromium by ion plating, as disclosed in JP-A-60-155600.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

従来の金属メツキと鑞付けを組み合わせる方法では、メ
ツキ層の硬度が充分でない為にメツキ層に塑性変形が生
じたり、メツキ層と基材界面との密着力が弱く、被鑞付
物質の脱落が問題であった。
In the conventional method of combining metal plating and brazing, the hardness of the plating layer is not sufficient, resulting in plastic deformation of the plating layer, and the adhesion between the plating layer and the base material interface is weak, causing the material to be brazed to fall off. It was a problem.

また、特開昭60−155600号に示された方法では
、クロムやチタン等表面が酸化されやすい金属を用いる
ために、通常の鑞付材との接着強度はさほど高いもので
はなかった。
Furthermore, in the method disclosed in JP-A-60-155600, since a metal whose surface is easily oxidized, such as chromium or titanium, is used, the adhesive strength with ordinary brazing materials is not so high.

〔問題点を解決するだめの手段〕[Failure to solve the problem]

上記問題の解決に、従来の金属メツキの代わりに、硬度
が高く、被メツキ材との密着力に優れ、しかも鑞付との
濡れ性に優れる金属炭化物または金属炭窒化物を気相合
成法により被覆することが望ましいことがわかった。こ
れらの物質としては、Ti、 Zr、 Hf、  V、
 Nb、 Ta、 Cr、 MoおよびWの金属炭化物
、金属炭窒化物が望ましい。なかでもTiの化合物を用
いた場合は特に以下の点で良好な結果が得られる。
To solve the above problems, instead of conventional metal plating, metal carbide or metal carbonitride, which has high hardness, excellent adhesion to the plated material, and excellent wettability with brazing, was synthesized using a vapor phase synthesis method. It has been found that coating is desirable. These substances include Ti, Zr, Hf, V,
Metal carbides and metal carbonitrides of Nb, Ta, Cr, Mo and W are preferable. Among them, when a Ti compound is used, particularly good results can be obtained in the following respects.

例えば、TiCやTiCNをダイヤモンドに被覆した場
合には、これらの被覆層とダイヤモンドの接合強度が高
く、かつ鑞付との濡れ性が向上する。
For example, when diamond is coated with TiC or TiCN, the bonding strength between the coating layer and the diamond is high, and the wettability with brazing is improved.

従って金属基体との鑞付は強度が高くなる。Therefore, the strength of the brazing with the metal substrate is increased.

また、これらの化合物は硬度が高いので、力を受けた時
変形が殆どなく、従って多数回の衝撃を受けたとしても
、接合強度は維持される。金属の炭化物、炭窒化物等を
ダイヤモンドに被覆する方法としては、基材表面への該
化合物のつき回り性、及び基材のダイヤモンドの品質劣
化防止の為に1000℃以下でCVD法によりメツキを
行ういわゆる気相合成法が特性上最も優れている。
Furthermore, since these compounds have high hardness, they hardly deform when subjected to force, and therefore the bonding strength is maintained even if subjected to multiple impacts. As a method of coating diamond with metal carbides, carbonitrides, etc., plating is carried out using the CVD method at a temperature of 1000°C or less in order to ensure that the compound spreads over the surface of the base material and to prevent quality deterioration of the diamond base material. The so-called gas-phase synthesis method is the most superior in terms of characteristics.

更に基材とメツキ層との密着度を向上させる為には、メ
ツキ層を形成する前段階で予め水素ガス、酸素ガスの一
層または二種の混合ガス、或いはそれ等のガスとアルゴ
ン、窒素等の不活性ガスとの混合ガスを放電状態にする
ことにより、イオンを発生させ且つ加速し、基材表面に
衝突させて、表面に微細な欠陥を形成する、いわゆるイ
オンエツチング法で前処理し、表面に均一にサブミクロ
ンの凹凸を形成することが望ましい。
Furthermore, in order to improve the degree of adhesion between the base material and the plating layer, before forming the plating layer, one layer or a mixture of hydrogen gas, oxygen gas, or a mixture of these gases and argon, nitrogen, etc. Pretreatment is carried out using the so-called ion etching method, in which ions are generated and accelerated by bringing a mixed gas with an inert gas into a discharge state, and collide with the surface of the substrate to form minute defects on the surface. It is desirable to uniformly form submicron irregularities on the surface.

こうすることにより、被覆層の炭化物または炭窒化物が
基材表面で核生成する際の生成密度が増大し、その結果
として被覆層と基材との密着性が向上する。
By doing so, the density of nucleation of the carbide or carbonitride of the coating layer on the surface of the substrate increases, and as a result, the adhesion between the coating layer and the substrate improves.

なお、1000℃以下でCVD法により気相合成する手
段としては、彼■物質が金属炭化物又は金属炭窒化物で
あるので、1000℃以下の低い温度で該化合物を容易
に合成できるプラズマCVD法を用いることが一層望ま
しい。また350℃以下では被覆層とダイヤモンドの接
合強度が低下する。
As a means of vapor phase synthesis using the CVD method at temperatures below 1000°C, since the substance is a metal carbide or metal carbonitride, the plasma CVD method, which can easily synthesize the compound at a low temperature below 1000°C, is recommended. It is more desirable to use Further, below 350° C., the bonding strength between the coating layer and diamond decreases.

〔作用〕[Effect]

以上記載した技術的手段の作用について以下に記す。 The effects of the technical means described above will be described below.

■ CVD法を用いて気相メツキをする効果ダイヤモン
ドは立体状のものが一般的で、その全面に均一な厚みに
被覆する必要があるが、他の方法に比較してCVD法が
その点に於て勝っている。またダイヤモンドは比較的に
寸法の小なるものが多く(最大径で数1、大きくても1
0mm程度)、治具の上に並べるだけで気相処理が可能
な上記の方法が生産性の面でも好ましい。
■ Effects of vapor phase plating using the CVD method Diamond is generally three-dimensional, and it is necessary to coat the entire surface with a uniform thickness, but the CVD method has advantages in this respect compared to other methods. I am winning. In addition, many diamonds are relatively small in size (the maximum diameter is several 1, the largest is 1
0 mm), and the above-mentioned method, which allows vapor phase treatment by simply arranging them on a jig, is preferable in terms of productivity.

■ CVD処理前段階でのイオンエツチング処理の作用 既述の通り、CVD法による金属炭化物或いは金属炭窒
化物の被覆層の生成の鍵を握っているのは該被覆層の粒
度であり、更に底密に言えば初期の核形成が安定化する
臨界核の大きさである。この臨界核の形成を促進し、核
生成密度を大とする為には基材表面にピット状の窪み等
の欠陥を形成してやる必要がある。こうすることにより
後に続く被覆層が密着力良くダイヤモンドに形成される
■ Effect of ion etching treatment at the stage before CVD treatment As mentioned above, the key to the formation of a metal carbide or metal carbonitride coating layer by the CVD method is the particle size of the coating layer. Specifically speaking, it is the size of the critical nucleus that stabilizes the initial nucleation. In order to promote the formation of this critical nucleus and increase the nucleation density, it is necessary to form defects such as pit-like depressions on the surface of the base material. This allows the subsequent coating layer to be formed on the diamond with good adhesion.

■ プラズマCVD法を用いて被覆する効果ダイヤモン
ドは、H,ガス中又は真空中では1200℃近傍に加熱
すると黒鉛化が進行し、ダイヤモンドの特性を失う。従
って減圧水素ガス雰囲気中で反応を行うCVD法でダイ
ヤモンドを安定して被覆するには1000℃以下で処理
することが前提条件となる。
(2) Effect of Coating Using Plasma CVD When diamond is heated to around 1200° C. in H, gas or vacuum, graphitization progresses and it loses its properties as diamond. Therefore, in order to stably coat diamond with the CVD method in which the reaction is carried out in a reduced pressure hydrogen gas atmosphere, it is a prerequisite that the treatment be performed at a temperature of 1000° C. or lower.

しかし乍ら、CVD法では金属炭化物や金属炭窒化物の
気相合成反応を1000℃以下の比較的低温で生ぜしめ
ることが困難であり、より低温での反応を可能とするプ
ラズマCVD法が本目的には更に適当である。
However, with the CVD method, it is difficult to produce a gas phase synthesis reaction of metal carbides and metal carbonitrides at relatively low temperatures below 1000°C, and the plasma CVD method, which enables reactions at lower temperatures, is the main method. It is more suitable for the purpose.

なお本願の方法は、天然ダイヤモンド、人工ダイヤモン
ドや多結晶ダイヤモンドにも応用可能であるが、特に接
合強度を要求されるダイヤモンドドレッサー等の分野で
有効である。
The method of the present invention can be applied to natural diamonds, artificial diamonds, and polycrystalline diamonds, but is particularly effective in fields such as diamond dressers that require high bonding strength.

〔実施例〕〔Example〕

以下実施例を記し、本発明の詳細な説明する。 The present invention will be described in detail below with reference to Examples.

〔実施例1〕 ダイヤモンド表面を気相合成法により処理し、ダイヤモ
ンドドレッサーを試作した。
[Example 1] A diamond dresser was prototyped by treating the diamond surface using a vapor phase synthesis method.

鑞付けは真空あるいは雲囲気ガス中で700〜800℃
で実施した。ダイヤモンド表面の炭化度質相は認められ
なかった。また鑞付は強度は、従来法であるNiメツキ
したダイヤモンドに比較し3〜4倍に達し、実使用中で
のダイヤモンドの欠落はまったく認められなかった。
Brazing is done at 700-800℃ in vacuum or cloudy gas.
It was carried out in No carbonized phase was observed on the diamond surface. The brazing strength was 3 to 4 times higher than Ni-plated diamond, which is the conventional method, and no diamond was observed to be missing during actual use.

鑞付は部分は、従来法では低密着を補うため、第2図の
様にダイヤモンド1を鑞付2を介し、ホルダー3にて補
強し、固定していた。
In the brazing part, in order to compensate for the low adhesion in the conventional method, diamond 1 was reinforced and fixed with a holder 3 through brazing 2 as shown in Fig. 2.

第1図に示す様に、ダイヤモンド5に気相合成法を用い
TiCを処理することにより、鑞付6を介して、ホルダ
7への接着力が増加し、第2図のようなホルダーによる
補強の必要がなくなる。
As shown in Fig. 1, by treating the diamond 5 with TiC using a vapor phase synthesis method, the adhesion force to the holder 7 is increased through the brazing 6, and reinforcement by the holder as shown in Fig. 2 is achieved. There is no need for

その結果、利用できるダイヤモンドの有効体積が増加、
3〜4倍の長寿命化が達成された。
As a result, the effective volume of available diamond increases,
A 3 to 4 times longer life was achieved.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、本願発明を用いた場合のダイヤモンドドレッ
サーであり、第2図は従来の例である。 図中、 1.5: ダイヤモンド 2.6: 鑞付 3.7: ホルダー 4  : 表面被覆層 し、j−1
FIG. 1 shows a diamond dresser using the present invention, and FIG. 2 shows a conventional example. In the figure, 1.5: Diamond 2.6: Brazed 3.7: Holder 4: Surface coating layer, j-1

Claims (5)

【特許請求の範囲】[Claims] (1)ダイヤモンドを金属基体に鑞付けする方法におい
て、ダイヤモンド表面に350℃以上、1000℃以下
の温度で気相合成法により金属炭化物又は金属炭窒化物
を被覆した後、鑞付を用いて金属基体と該ダイヤモンド
を鑞付けすることを特徴とするダイヤモンドの鑞付け方
法。
(1) In the method of brazing diamond to a metal substrate, the diamond surface is coated with metal carbide or metal carbonitride by vapor phase synthesis at a temperature of 350°C or higher and 1000°C or lower, and then the metal is coated with metal carbide or metal carbonitride using brazing. A method for brazing diamond, comprising brazing a substrate and the diamond.
(2)金属炭化物又は、金属の炭窒化物がTiの炭化物
又は炭窒化物であることを特徴とする特許請求の範囲第
(1)項記載のダイヤモンドの鑞付け方法。
(2) The diamond brazing method according to claim (1), wherein the metal carbide or metal carbonitride is a Ti carbide or carbonitride.
(3)気相合成法がCVD法であることを特徴とする特
許請求の範囲第(1)項記載のダイヤモンドの鑞付け方
法。
(3) The diamond brazing method according to claim (1), wherein the vapor phase synthesis method is a CVD method.
(4)気相合成法がプラズマCVD法であることを特徴
とする特許請求の範囲第(1)項記載のダイヤモンドの
鑞付け方法。
(4) The diamond brazing method according to claim (1), wherein the vapor phase synthesis method is a plasma CVD method.
(5)ダイヤモンドの前処理として、水素ガス、酸素ガ
スの1種または2種のガス、またはこれに不活性ガスと
してAr、N_2を混合した混合ガスを用いてエッチン
グすることを特徴とする特許請求の範囲第(1)項記載
のダイヤモンドの鑞付け方法。
(5) A patent claim characterized in that the diamond is pre-treated by etching using one or both of hydrogen gas and oxygen gas, or a mixed gas containing Ar and N_2 as an inert gas. A diamond brazing method according to item (1).
JP25586487A 1987-10-08 1987-10-08 Method for brazing diamond Pending JPH0196073A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25586487A JPH0196073A (en) 1987-10-08 1987-10-08 Method for brazing diamond

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25586487A JPH0196073A (en) 1987-10-08 1987-10-08 Method for brazing diamond

Publications (1)

Publication Number Publication Date
JPH0196073A true JPH0196073A (en) 1989-04-14

Family

ID=17284642

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25586487A Pending JPH0196073A (en) 1987-10-08 1987-10-08 Method for brazing diamond

Country Status (1)

Country Link
JP (1) JPH0196073A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0480878A2 (en) * 1990-10-12 1992-04-15 Centre Suisse D'electronique Et De Microtechnique S.A. Cubic boron nitride (CBN) abrasive tool
JPH0584668A (en) * 1991-04-03 1993-04-06 Noritake Co Ltd Polishing tool for chamfering internal periphery
JPWO2007069668A1 (en) * 2005-12-14 2009-05-21 並木精密宝石株式会社 Shank and diamond scriber using it
JP2011527979A (en) * 2007-07-17 2011-11-10 エレメント シックス リミテッド Method for bonding SiC-diamond
JP2014121608A (en) * 2012-12-21 2014-07-03 Omega Sa Decorative piece produced by setting on amorphous metal
US9194189B2 (en) 2011-09-19 2015-11-24 Baker Hughes Incorporated Methods of forming a cutting element for an earth-boring tool, a related cutting element, and an earth-boring tool including such a cutting element
JPWO2019155749A1 (en) * 2018-02-08 2020-12-03 住友電気工業株式会社 Super-abrasive grain and super-abrasive wheel

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6324002A (en) * 1986-02-14 1988-02-01 Sumitomo Electric Ind Ltd Hard sintered body for tool and cutting tool
JPS6328501A (en) * 1986-06-27 1988-02-06 サンドビツク アクテイエボラ−グ Brazing article of coating cemented carbide or coating ceramics

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6324002A (en) * 1986-02-14 1988-02-01 Sumitomo Electric Ind Ltd Hard sintered body for tool and cutting tool
JPS6328501A (en) * 1986-06-27 1988-02-06 サンドビツク アクテイエボラ−グ Brazing article of coating cemented carbide or coating ceramics

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0480878A2 (en) * 1990-10-12 1992-04-15 Centre Suisse D'electronique Et De Microtechnique S.A. Cubic boron nitride (CBN) abrasive tool
JPH0584668A (en) * 1991-04-03 1993-04-06 Noritake Co Ltd Polishing tool for chamfering internal periphery
JPWO2007069668A1 (en) * 2005-12-14 2009-05-21 並木精密宝石株式会社 Shank and diamond scriber using it
JP4565135B2 (en) * 2005-12-14 2010-10-20 並木精密宝石株式会社 Shank and diamond scriber using it
JP2011527979A (en) * 2007-07-17 2011-11-10 エレメント シックス リミテッド Method for bonding SiC-diamond
US8757472B2 (en) 2007-07-17 2014-06-24 David Patrick Egan Method for joining SiC-diamond
US9194189B2 (en) 2011-09-19 2015-11-24 Baker Hughes Incorporated Methods of forming a cutting element for an earth-boring tool, a related cutting element, and an earth-boring tool including such a cutting element
US9771497B2 (en) 2011-09-19 2017-09-26 Baker Hughes, A Ge Company, Llc Methods of forming earth-boring tools
JP2014121608A (en) * 2012-12-21 2014-07-03 Omega Sa Decorative piece produced by setting on amorphous metal
JPWO2019155749A1 (en) * 2018-02-08 2020-12-03 住友電気工業株式会社 Super-abrasive grain and super-abrasive wheel

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