JPH01291217A - Active matrix substrate - Google Patents

Abstract

PURPOSE:To suppress the generation of wire-shaped defects, etc., at the time of active matrix display by providing bypass lines which are electrically connected at both ends to at least either wiring of respective scanning lines and data lines and intersect with the other wiring in an insulated state. CONSTITUTION:The respective ends of the bypass lines 51 are connected to the respective scanning lines 50 in such a manner as to intersect in the insulated state with the respective data lines 40 intersecting with the scanning lines 50. In addition, the bypass lines 41 are wired between the intersected parts of the respective data lines 40 and the scanning lines 50 to the data lines 40. Both ends of the bypass lines 41 are electrically connected to the data lines 40 between the intersected parts of the data lines 40 and the scanning lines 50 and are constituted of ITO films. Then, even if a disconnection arises between the intersected parts of at least either of the data lines and the scanning lines, said wiring is electrically connected by the bypass lines and, therefore, the generation of the wire-shaped defect is suppressed.

Description

DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention is directed to a large number of thin film transistors (Thin Film Transistors).
mTransistor) is mounted on an insulating substrate.
The present invention relates to an active matrix substrate that is formed into a box shape and is used in combination with a liquid crystal or the like to form an active matrix display or the like.

(Prior Art) Recently, active matrix substrates using a large number of thin film transistors (hereinafter abbreviated as TPT) have been used in large-capacity display devices using liquid crystals or the like. The active matrix substrate is an insulating substrate constituting a liquid crystal display cell, as shown in FIG.

A large number of picture element electrodes 81.81. ... are arranged in a matrix, and a large number of T F Te3.82 . ...are arranged in a matrix. The drain electrode of each TFT 82 is electrically connected to each picture element electrode □81, and each TFT 82 functions as a switching element for each picture element electrode 81.

A plurality of scanning lines 8 are provided on the insulating substrate so as to be electrically connected to the gate electrodes of the TFTs 82 arranged in one direction.
3.83. ... are wired in parallel.

Further, on the insulating substrate, a plurality of data lines 84, 84 . . . 84 . ... are wired in parallel. Each data line 84 is electrically connected to the source electrode of each TFT 82 arranged in a column in the direction of each data line 84 .

Such an active matrix substrate is used as a liquid crystal display device by laminating two, for example, liquid crystal layers. In this case, each TPT of the active matrix substrate is driven in a line sequential manner, and each scanning line 83 receives a scanning signal, and each data line 84 receives a data signal. Then, T to which both the scanning signal and the data signal are input.
The FT 82 operates and a voltage is applied to the picture element electrode 81 connected to the TFT 82 . As a result, the portion of the liquid crystal layer facing the picture element electrode 81 operates electro-optically to obtain a predetermined matrix display.

(Problems to be Solved by the Invention) In such an active matrix substrate, the scanning line 83 and the data line 84 are usually formed of a conductive metal film laminated on an insulating substrate. And scan line 8
3 and the data line 84.
Since the FT 82 is driven in a line sequential manner as described above, each scanning line 83 and each data line 84 are insulated from each other in order to prevent leakage.

The scanning line 83 and the data line 84 are usually composed of conductive metal films laminated on an insulating substrate. Therefore, the scanning line 83 and the data line 84.

It is easy to peel off from the insulating substrate (and the scanning line 83 and data line 84 may be disconnected).

Furthermore, at the intersection of the scanning line 83 and the data line 84, two
To prevent both from shorting out.

At each intersection, an amorphous silicon (hereinafter abbreviated as a-3i) semiconductor film and a protective insulating film are interposed to reliably insulate the scanning line 83 and data line 84. a-
3t semiconductor film and protective insulating film.

They are sequentially laminated on the intersections with the scanning lines 83 in the data lines 84 made of metal film formed on the insulating substrate.

A scanning line 83 made of, for example, a metal film is laminated on the protective insulating film. Therefore, the scanning line 83 is raised at the intersection with the data line 84 by the thickness of the a-8i film and the protective insulating film, and a step is formed from the part other than the intersection. Then, there is a risk that the conductive metal film constituting the scanning line 83 may peel off at this stepped portion, resulting in disconnection.

In order to prevent such disconnection, the metal film constituting the scanning line 83 and the data line 84 and the a-3
Nine different approaches have been taken when forming the t film and the protective insulating film. However, disconnection of the scanning line 83 and data line 84 cannot be completely prevented. Such a disconnection appears as a linear defect on the display section during active matrix display.

Significantly reduces display performance. An active matrix substrate having such a disconnection cannot be used for active matrix display, and the yield of the active matrix substrate is significantly reduced.

The present invention is intended to solve the above-mentioned conventional problems, and its purpose is to suppress the occurrence of linear defects as much as possible during active matrix display, and therefore to improve the performance of active matrix display. The purpose of the present invention is to provide an active matrix substrate.

(Means for Solving the Problems) The active matrix substrate of the present invention has a plurality of picture element electrodes arranged in a matrix on an insulating substrate, and a plurality of picture element electrodes arranged in parallel to one direction in which each picture element electrode is disposed. A plurality of data lines are wired to intersect perpendicularly to each of the five scan lines, and a plurality of data lines intersect with each other while being insulated from each scan line, and each drain electrode is electrically connected to the pixel electrode. A plurality of thin film transistors are arranged in a matrix so as to be connected to the scanning lines, each of which has its source electrode connected to a scanning line, and whose gate electrode is connected to a data line. The data lines are electrically connected at both ends to one of the data lines, and a bypass line intersects with the other data line in an insulated state, thereby achieving the above object.

In addition, there are two active matrix substrates of the present invention.

A plurality of pixel electrodes are arranged in a matrix on an insulating substrate, a plurality of scanning lines are wired parallel to one direction in which each pixel electrode is arranged, and each scanning line is orthogonal to each other. A plurality of data lines intersect with each other while being insulated from each scanning line, and each drain electrode is arranged in a matrix so that each drain electrode is electrically connected to the picture element electrode.
A plurality of thin film transistors each having a source electrode connected to a scanning line and a respective gate electrode connected to a data line, and an intersection of each scanning line and each data line, to one of the wirings. 4. A bypass line with both ends electrically connected.

1. Thereby, the above object is achieved.

(Example) The present invention will be described below with reference to Examples.

The active matrix substrate of the present invention, as shown in FIGS.
e) A large number of rectangular picture element electrodes 30 formed of a film are arranged in a matrix, and a part of each picture element electrode 30 is arranged near the corner of each picture element electrode. It constitutes the drain electrode 21 of the thin film transistor (TPT) 20.

Each TPT 20 has each picture element electrode 30 on the glass substrate 10.
A source electrode 22 made of, for example, ITO11W is disposed with a slight gap between the portion constituting the drain electrode 21. The source electrode 22 constitutes a part of a data line 40, which will be described later. on the source electrode 22 and the drain electrode 2
1, an n+ type amorphous silicon film (hereinafter referred to as a
-3i(n”) film) 23 are stacked,
on the a-3i (rr') film 23.

And an intrinsic amorphous silicon film (hereinafter referred to as a
-3i (abbreviated as i) film) 24 are laminated with a concave cross section.

A gate insulating film 25 made of silicon nitride (Si'Nx), for example, is laminated on the a-3i (i) film 24. On the upper surface of the gate insulating film 25.

A groove having a V-shaped cross section is formed. A gate electrode 26 made of a Ti film, which is a gate metal, is laminated on the gate insulating film 25 to form the TPT 20.

The source electrode 22 of the ITO film in each TPT 20 is as follows.

A plurality of data lines 40, 40, made of ITO film are wired in parallel to each other at appropriate intervals on the glass substrate 10.
They are each integrated into one book. Insulating substrate 1
0, a plurality of scanning lines 50 are wired in parallel so as to be orthogonal to each of the seven data lines 40, forming a grid pattern. Each scanning line 50 is formed of a Ti film similarly to the gate electrode 26 of each TPT 20.

One tree of scanning lines 50 connects each TP arranged in parallel in the wiring direction.
They are each integrated with the gate electrode 26 of T20.

At each intersection of each scanning line 50 and data line 40, an a-3t(n"") film 61. a-3i (
i) A film 62 and a protective insulating film 63 of SiNx are interposed in a state in which they are sequentially laminated on the data line 40.

Each end of a bypass line 51 is connected to each scanning line 50 so as to intersect with each data line 40 intersecting with the scanning line 50 in an insulated state. At the intersection between the bypass line 51 and the data line 40, an a-3i(n) film 61.
a-31(i) Membrane 62. and a protective insulating film 63 of SiNx are interposed in a state in which they are sequentially laminated on the data line 40.

An active matrix substrate with such a configuration.

Manufactured as follows. An ITO film having a thickness of 1,000 wafers is formed on a transparent insulating glass substrate 10 by sputtering. Next, plasma CVD was performed on the ITO film.
After laminating a-3t(n'') with a thickness of 450 mm using the method, these two layers are connected to the picture element electrode 30, the data line 40, and the source electrode 22 of the TFT 20, as shown by solid lines in FIG. It is patterned into a shape corresponding to the drain electrode 21 by photolithography.

In this state, a SiNx film having a thickness of 300 mm and a SiNx film having a thickness of 4800 mm was continuously formed on the entire surface of the glass substrate 10 by the plasma CVD method. As shown by the two-dot chain line, TPT20
and the scanning line 5011 of the data line 40
.

5iNX film, so that a portion corresponding to the intersection with
The a-3t(i) film and the a-5t(n") film are etched. Thereafter, a Ti film serving as a gate metal is formed on the entire surface of the glass substrate 10 to a thickness of 3000 nm. The membrane was prepared by TP as indicated by the dashed line in
Patterning is performed in a shape corresponding to the gate electrode 26 and scanning line 50 at T20. As a result, the active matrix substrate of the present invention having the above-described configuration is manufactured.

Such an active matrix substrate of the present invention is used as a liquid crystal display device, for example, by stacking liquid crystal layers. Each TPT 20 of the active matrix substrate is driven by a line sequential driving method.

Each TPT 20 is operated by a scan signal input from each scan line 50 and a data signal input from each data line 40, and power is applied to the picture element electrode 30 connected to the TPT 20. As a result, the portion of the liquid crystal layer facing the picture element electrode 3o operates electro-optically to obtain a predetermined matrix display.

FIG. 5 is a sectional view of a main part showing another example of the present invention. A bypass line 41 is wired to each data line 40 between the intersections of each data line 40 and each scanning line 50 .

Both ends of the bypass line 41 are electrically connected to each data line 40 between the intersections of each data line 40 and each scanning line 50 . The bypass line 41 connects each data line 40
Similarly, it is made of ITO film.

As shown in FIG. 6, the bypass line 41 is formed by laminating an ITO film and an a-3i film on an insulating glass substrate.
Picture element electrode 30. Data line 40. They are formed by patterning when patterning the source electrode 22 and drain electrode 21 of the TFT 20 by photolithography. The other configurations are similar to the active matrix substrate shown in FIG.

(Effects of the Invention) In the active matrix substrate of the present invention, the data lines and scanning lines wired perpendicularly to each other are electrically connected to one of the wires other than at their intersections. Since the tangential bypass line intersects with the other wiring, even if the metal film that makes up one of the wirings peels off and breaks at the intersection of the data line and the scanning line, that wiring will still be connected to the bypass line. electrically connected. In addition, a bypass line, each end of which is electrically connected to either the data line or the scanning line, is wired between the intersections of each data line and the scanning line. Even if a disconnection occurs between the intersections of either one of the lines, that line is electrically connected by the bypass line. Therefore 9
When performing active matrix display using the active matrix substrate of the present invention, the generation of linear defects can be suppressed as much as possible, and the yield of the active matrix substrate is significantly improved.

4. Next Day Figure 1 is a plan view of the main part of the active matrix substrate of the present invention, Figure 2 is a sectional view taken along the line ■-■ in Figure 1, and Figure 3 is a cross-sectional view taken along the line ■-■ in Figure 1. A cross-sectional view.

FIG. 4 is a plan view of the main parts for explaining the manufacturing process of the active matrix substrate of the present invention, FIG. 5 is a plan view of the main parts of an active matrix substrate of another example of the invention, and FIG. 6 is the manufacturing process thereof. FIG. 7 is a plan view schematically showing a conventional active matrix substrate.

10...Glass substrate, 20...TPT, 21...
Drain electrode, 22... Source electrode, 23.61
...a-3i (n”) film, 24.62-a-3
i (+) film, 25-... gate insulating film, 26-
... Gate electrode, 30 ... Picture element electrode, 40 ... Data line, 41 ... Bypass line, 50 ... Scanning line, 51
... Bypass line, 63... Protective insulating film.

that's all

Claims (1)

[Claims] 1. A plurality of picture element electrodes arranged in a matrix on an insulating substrate, and a plurality of scanning lines wired parallel to one of the arrangement directions of each picture element electrode. , a plurality of data lines that are wired perpendicularly to each scanning line and intersect with each other while being insulated from each scanning line, and arranged in a matrix so that each drain electrode is electrically connected to the picture element electrode. a plurality of thin film transistors each having a source electrode connected to a scanning line and a respective gate electrode connected to a data line; and wiring for one of the scanning lines and data lines; An active matrix board comprising: a bypass line that is electrically connected at both ends and intersects with the other wiring in an insulated state. 2. A plurality of picture element electrodes arranged in a matrix on an insulating substrate, a plurality of scanning lines wired parallel to one of the arrangement directions of each picture element electrode, and what each scanning line is. A plurality of data lines are wired orthogonally and intersect with each other while being insulated from each scanning line, and each data line is arranged in a matrix so that each drain electrode is electrically connected to the picture element electrode, a plurality of thin film transistors each having a source electrode connected to a scanning line and each gate electrode connected to a data line, and between an intersection of each scanning line and each data line,
An active matrix board comprising: a bypass line having both ends electrically tangential to one of the wirings;