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JPH01270596A - Deposition of diamond coating film - Google Patents

Deposition of diamond coating film

Info

Publication number
JPH01270596A
JPH01270596A JP9527188A JP9527188A JPH01270596A JP H01270596 A JPH01270596 A JP H01270596A JP 9527188 A JP9527188 A JP 9527188A JP 9527188 A JP9527188 A JP 9527188A JP H01270596 A JPH01270596 A JP H01270596A
Authority
JP
Japan
Prior art keywords
substrate
film
diamond
frequency
coating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9527188A
Other languages
Japanese (ja)
Inventor
Satoshi Iio
聡 飯尾
Shoichi Watanabe
正一 渡辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Niterra Co Ltd
Original Assignee
NGK Spark Plug Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Spark Plug Co Ltd filed Critical NGK Spark Plug Co Ltd
Priority to JP9527188A priority Critical patent/JPH01270596A/en
Publication of JPH01270596A publication Critical patent/JPH01270596A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To increase the number of diamond crystal nuclei deposited at the initial stage of reaction, reduce the particle size of the deposited diamond film and improve the uniformity and adhesivity of the film by oscillating a substrate at high frequency in the formation of a diamond coating film on the surface of the substrate. CONSTITUTION:A diamond coating film is deposited on a surface of a substrate by using a carbon source gas such as methane, acetone or carbon monoxide preferably in combination with hydrogen gas and activating the gas by plasma discharge with a thermionic emission material or by high-frequency or microwave irradiation while oscillating the hot substrate usually at a frequency of 15kHz and an output of 1-500W.

Description

【発明の詳細な説明】 [産業上の利用分賢コ 本発明は、切削工具などの工具、ヒートシンクなど電子
部材等の基体の表面に、気相合成法によりダイヤモンド
被膜を析出形成(成膜)させる方法に関する。
[Detailed Description of the Invention] [Industrial Application] The present invention is a method of depositing and forming a diamond film on the surface of a substrate such as a tool such as a cutting tool or an electronic component such as a heat sink by a vapor phase synthesis method. Concerning how to do so.

[従来の技術] 炭素源を含む原料ガスを、熱電子放射材、高周波による
プラズマ放電、マイクロ波によるプラズマ放電などによ
り加熱し”C活性化し、この雰囲気中に基体を配してそ
の表面にダイヤモンド被膜を析出形成する方法が知られ
Cいる。また、この方法においては、基体の表面に前処
理を施して表面を活性化し、反応初期に析出するダイヤ
モンド結晶核の増加を図るとともに、析出したダイヤモ
ンドの被覆層と基体との密着性を高めることが試みられ
ている。(特開昭60−86096号公報、同60−2
04695号公報、同61−52363号公報、同62
−226889号公報など)[発明が解決しようとする
!fil しかるに、上記従来の方法は、いずれも反応初期に基体
表面の微細な突起にダイヤモンド結晶核を析出させるも
のであり、通常この微細な突起を均一に基体表面に形成
することは困難である。このため、反応初期に析出する
ダイヤモンド結晶核の形成が基体表向で不均一となり、
析出形成したタイヤモント被膜は製品間゛ζばらつきが
大きいという欠点かあった。また、上記前処理を行うと
未処理のものよりは改善されるものの、なお核発生か不
十分であり、その結果、得られるタイヤモント被膜の結
晶粒径は5μIηから10μmnと大きく不均質てあり
、また、核の密着性も不1分なものであった。
[Prior art] A raw material gas containing a carbon source is heated using a thermionic radiation material, plasma discharge by high frequency, plasma discharge by microwave, etc. to activate "C", and a substrate is placed in this atmosphere and diamond is coated on its surface. A method of depositing and forming a film is known. In this method, the surface of the substrate is pretreated to activate the surface to increase the number of diamond crystal nuclei that precipitate at the initial stage of the reaction, and also to remove the precipitated diamond. Attempts have been made to improve the adhesion between the coating layer and the substrate.
No. 04695, No. 61-52363, No. 62
-226889, etc.) [The invention attempts to solve the problem! However, in all of the above conventional methods, diamond crystal nuclei are precipitated on fine protrusions on the surface of the substrate at the initial stage of the reaction, and it is usually difficult to uniformly form these fine protrusions on the surface of the substrate. For this reason, the formation of diamond crystal nuclei that precipitate at the initial stage of the reaction becomes uneven on the surface of the substrate.
The deposited tire mont coating had the disadvantage of large variations between products. In addition, although the above pretreatment is improved over the untreated one, nucleation is still insufficient, and as a result, the crystal grain size of the Tiemon coating obtained is highly heterogeneous, ranging from 5μIη to 10μmn. Moreover, the adhesion of the nucleus was also inadequate.

本発明者は、上述のような観点から各種基板」二に均質
で密名性の優れたタイヤセンl−11i、膜を形成すべ
く研究を行った結果、基材の表面にタイヤモント被膜を
形成する際に、前記基材を高い振動数により振動さぜな
からタイヤセン1〜被膜の形成を行うと、反応初期に4
ノ1出するタイA・モント結晶核か著しく増大し、その
結果、得られるタイヤモント破股か均質微1:’!化し
、密名性の優れたものになるという知見を得た。
From the above-mentioned viewpoint, the present inventor conducted research to form a homogeneous Tiresen l-11i film on various substrates, and as a result, formed a Tiremont film on the surface of the base material. When the base material is vibrated at a high frequency to form the coating, 4
The Thai A. Mont crystal nucleus that comes out of No. 1 increases significantly, and as a result, the Ti A. Mont. It has been discovered that the name has become a secret and has excellent secrecy.

[発明の目的] この発明の目的は、反応初期に析出するタイー■モン1
〜結晶核の形成か基体表m1て均一となり、析出形成し
たタイヤセン1〜被膜は、製品間でのばらつきか小さく
ζきるタイー■モン1〜被膜の析出形成方法の提供にあ
る。
[Object of the invention] The object of the invention is to reduce the amount of Tiemon 1 precipitated at the initial stage of the reaction.
To provide a method for depositing and forming a Tiemon 1 coating in which crystal nuclei are formed uniformly on the substrate surface m1, and the deposited coating has small variations between products.

[課題を解決するだめの手段] −4−層目的を達成針るため、この発明は、炭素源カス
を含み、熱電子放月・1材または高周波もしくはマイク
ロ波によるブラスマ放電なとによって活性化された原料
カス中に、加熱基体を置くことによって、前記基体の表
面にタイヤセン1〜被膜を析出形成する方法において、
前記基体を高い振動数゛C振動さぜなから成膜づ−る構
成を採用した。
[Means for Solving the Problems] -4-Layer In order to achieve the objective, the present invention includes carbon source scum and is activated by thermionic emission, plasma discharge by high frequency or microwave, etc. In a method of depositing and forming a coating on the surface of a heated substrate by placing a heated substrate in a heated raw material waste,
A configuration was adopted in which the film was formed on the substrate using high frequency C vibration waves.

炭素源カスとして(J例えはメタン、エタン、アセチレ
ン等の各種炭化水素、アセ1〜ン等のケI〜ン類、エタ
ノール等のアルコール類、炭酸カス、−酸化炭素を1重
用することができる。就中、メタン、アセl〜ン、−酸
化炭素が好tt、<、また、上記炭素源カスと水素との
作用か好ましい4.水素との併用によ−)で非タイヤモ
ン1〜成分の析出を抑制し、タイヤモン1〜か析出しや
引くなる。なお、原料カスにはアルコン等の不活性カス
を混入させCも支障ない。
As carbon source residue (for example, various hydrocarbons such as methane, ethane, and acetylene, carbons such as acetone, alcohols such as ethanol, carbonic acid residue, and carbon oxide can be used as a single source). Among them, methane, acetate, and carbon oxide are preferable, and the action of the carbon source residue and hydrogen is also preferable. Suppresses precipitation and reduces the amount of precipitation and precipitation. It should be noted that C may be used without any problem by mixing inert residue such as alcon into the raw material residue.

3一 基板を振動さぜる条件は基板の形状、固有振動数により
変化するか、通常の周波数は15キロヘルツから50キ
ロヘルツ、出力は1ワツ)へから500ワットである。
3. The conditions for vibrating the substrate vary depending on the shape and natural frequency of the substrate, but the usual frequency is from 15 kHz to 50 kHz, and the output is from 1 watt to 500 watts.

周波数か15キロヘルツ、より小さいかまた(コ出力か
1ワツトより小さいとタイヤセンl−核生成の促進に効
果のない場合がある。
If the frequency is less than 15 kilohertz or the power is less than 1 watt, it may be ineffective in promoting nucleation.

また、周波数が50キロヘルツを越えるかまたは出力か
゛500ワッ1〜を越えても出力増大Gこ体1応する効
果か得られない。
Further, even if the frequency exceeds 50 kilohertz or the output exceeds 500 watts, no corresponding effect can be obtained with respect to the output increase.

[発明の作用および効果] 本発明の方法によれは、基体を振動させることにより基
体に血を常に活性の高い状態に純性することかできる。
[Operations and Effects of the Invention] According to the method of the present invention, by vibrating the substrate, blood can always be purified to a highly active state in the substrate.

よって振動させながらタイ−\・モン1へ被膜を析出形
成することにより、タイヤ:l−:ント披膜か均質微粒
化して、密着性の優れたものになる。また、反応初期に
析出するダ、イヤモント結晶核か著し、く増大し1、そ
の結果、微結晶からなる均一性の高いり・イヤセン1−
皮膜を迅速に形成できる。5[実施例1 本発明(y)−j書ノ、を一実施例により具体的に説明
す/〕− る。
Therefore, by depositing and forming a film on the tire film while vibrating it, the tire film becomes homogeneous and atomized, resulting in excellent adhesion. In addition, the number of diamond crystal nuclei that precipitate in the initial stage of the reaction increases significantly.
A film can be formed quickly. 5 [Example 1] The present invention (y)-j will be explained in detail by way of an example.

第1図はマイク11波によるブラスマ放電によってタイ
ヤセンl−被膜を析出させる析出形成装置100を示す
。この装置100は、炭素源カスを含む原料カスか導入
される石英製反応容器1と、容器内に基体10を設置)
るための設置台2と、該1没;斤台2[」近の原料カス
を活性fヒさu′るためのマイクロ波に、J:るグラス
マ放電発生装置3と、該設置台2に振動を伝える超音波
振動子4を倫えている。
FIG. 1 shows a deposition forming apparatus 100 for depositing a Tiresen l-coat by plasma discharge using 11 microphone waves. This apparatus 100 includes a quartz reaction vessel 1 into which raw material scum including carbon source scum is introduced, and a substrate 10 installed inside the vessel)
an installation stand 2 for heating the loaf, and a glass discharge generator 3 for heating the raw material scraps near the loaf stand 2 with microwaves; It is equipped with an ultrasonic vibrator 4 that transmits vibrations.

反応容器1は円筒を立てた形状を有し、天板11の中央
には原料カス導入1」]2が設げられ、壁ttill 
13の下部には原料カスの排出を二il 14か設げら
れている、J、た、底板15にはタイヤフラム16か用
いられている。設置台2は前1足容器1内の中リジに配
さノ1だ白板21と、その1・面中心を支え、前記底板
]5を貫通して設(−)られな支杆22とからなる。設
置台2の十に木実施例ては基板である一j1(体]0か
代置かノー(る。また、支柱22の下端には超音波11
に動T−4h)fiWiえへれている。
The reaction vessel 1 has an upright cylindrical shape, and a raw material waste introduction 1''2 is provided in the center of the top plate 11, and a wall ttill
14 is provided at the bottom of 13 for discharging raw material waste, and a tire flam 16 is used for the bottom plate 15. The installation stand 2 consists of a white plate 21 placed in the middle of the front container 1, and a support rod 22 that supports the center of the first side and is installed (-) through the bottom plate 5. Become. In this embodiment, the installation base 2 is a board.
Activities T-4h) fiWi is changing.

プラズマ放電発生装置3は、反応容器]の中央外周部に
設けられた導波管31と、その一端に取イ」けられた発
振器32とからなり、導波管31の他端には発振器32
と対向してプラズマ調整用プランジャ33が取付りられ
Cいる。
The plasma discharge generating device 3 consists of a waveguide 31 provided at the center outer periphery of a reaction vessel and an oscillator 32 set aside at one end of the waveguide 31.
A plunger 33 for plasma adjustment is attached opposite to C.

次に析出形成装置100の作用を説明する。Next, the operation of the precipitation forming apparatus 100 will be explained.

超硬合金からなる基体(10xlOx5mm)10を反
応容器1内の設置台2の台板21」−に設置する。反応
容器1内への原料ガス流星をメタンカス0.5secm
と水素カス99.5secmに設定し、天板1]に設け
た原料ガス導入口12がら原料ガスを流入し、一方壁叫
13の1・部にある原料ガスの排出し114から排気し
て、反応容器1内の圧力を50Tor+−に保持する。
A base body (10 x 10 x 5 mm) 10 made of cemented carbide is placed on the base plate 21 of the installation base 2 in the reaction vessel 1 . The raw material gas meteor into the reaction vessel 1 is a methane gas of 0.5 sec.
The hydrogen gas was set to 99.5 sec, and the raw material gas was introduced through the raw material gas inlet 12 provided on the top plate 1, and on the other hand, the raw material gas was exhausted from the raw material gas outlet 114 located in the first part of the wall pipe 13. The pressure inside the reaction vessel 1 is maintained at 50 Tor+-.

この状態て反応容器1の中央外周部に設けた発振器32
がら導波管31を介して放射された、例えば周波数2゜
450メガヘルツ、出力500ワツ1〜のマイクロ波を
、プラズマ調整用プランジャ33によって調整し、基体
10の周囲にマイクロ波によるプラズマ放電を発生させ
る。そして、基体10を超音波振動子4によって周波数
20キロヘルツ、出力50ワツトで設置台2を介して振
動させると共に、プラズマ放電によって原料ガスの加熱
活性化と基体表面温度を1昇させる。このプラズマ放電
により基体表面イ11近の原料ガスは活性化を促進され
、基板表面にダイヤモンド皮膜が形成される。この状態
で基体温度を900°Cに設定し、6時間の成膜を行い
、基体10上にダイヤモンド皮膜を形成させた。
In this state, the oscillator 32 provided at the center outer periphery of the reaction vessel 1
Microwaves emitted through the waveguide 31, for example, with a frequency of 2°450 MHz and an output of 500 Watts, are adjusted by the plasma adjustment plunger 33, and a plasma discharge by the microwave is generated around the base 10. let Then, the substrate 10 is vibrated by the ultrasonic vibrator 4 at a frequency of 20 kilohertz and an output of 50 watts via the installation table 2, and the raw material gas is heated and activated by plasma discharge, and the substrate surface temperature is raised by 1. This plasma discharge promotes activation of the raw material gas near the substrate surface 11, and a diamond film is formed on the substrate surface. In this state, the substrate temperature was set at 900° C., and film formation was performed for 6 hours to form a diamond film on the substrate 10.

第2図は基体10を超音波振動子4で振動させながらタ
イヤモノ1〜皮膜を成膜させた状態を示す。
FIG. 2 shows a state in which the tire material 1 to the film are formed while the substrate 10 is vibrated by the ultrasonic vibrator 4.

設置台2を実線Aに示ずように上下振動さぜることによ
り、第3図に示す如く、基体10上には微結晶からなる
粒子10aが均一に形成され、密着性に優れた隙間の少
ない均一な膜か形成された。
By vertically vibrating the installation table 2 as shown by the solid line A, particles 10a made of microcrystals are uniformly formed on the base 10, as shown in FIG. A less uniform film was formed.

第4図は実施例と比較するため、」1記実施例の条件で
基体10を超音波振動子4て振動させない以外は、」−
記実施例と同様にしてダイヤモンド皮膜を形成させた場
合のタイヤモンI・層を示す。基体10上には、大小の
粒子10aからなる不均一な粒子が形成され、隙間の多
い膜が形成された。
In order to compare with the example, FIG.
A tire mon I layer is shown in which a diamond film is formed in the same manner as in the example described above. Nonuniform particles consisting of large and small particles 10a were formed on the substrate 10, and a film with many gaps was formed.

この結果、超音波振動子4で振動さぜな基体10の被覆
層を電子顕微鏡で観察したところ平均粒径1μmの微結
晶からなる厚み5μmの密議性に優れた均一膜が基体1
0上に形成された。しかし、超音波振動子4で振動さぜ
ない基体10の被覆層を電子顕微鏡゛ζ観察したところ
粒径3 /1mから10μmの不均一な粒子からなる膜
が形成されている。
As a result, when the coating layer of the substrate 10, which was vibrated by the ultrasonic vibrator 4, was observed with an electron microscope, a uniform film with a thickness of 5 μm and excellent occlusion properties was found on the substrate 1, consisting of microcrystals with an average grain size of 1 μm.
Formed on 0. However, when the coating layer of the substrate 10, which is not vibrated by the ultrasonic vibrator 4, is observed under an electron microscope, a film composed of non-uniform particles having a particle size of 3/1 m to 10 μm is formed.

上記の如く本発明によれば、基体10の基体表面は、超
音波振動子4からの振動作用により基体表面が圧縮およ
び伸張を受け′C活性化するので、反応初期におけるダ
イヤモンド結晶核が著しく増大し、その結果、微結晶か
らなる均一性の優れた粒子が形成されるので精度の高い
ダイヤモンド被膜が形成できる。
As described above, according to the present invention, the surface of the substrate 10 is compressed and stretched by the vibration action from the ultrasonic vibrator 4 and is activated, so diamond crystal nuclei are significantly increased at the initial stage of the reaction. As a result, highly uniform particles made of microcrystals are formed, so that a highly precise diamond coating can be formed.

他の実施例としては、第5図に示す熱電子放射材方法、
第6図に示す高周波によるプラズマ放電方法がある。
Other examples include the thermionic emissive material method shown in FIG.
There is a plasma discharge method using high frequency as shown in FIG.

第5図の熱電子放射材方法は、容器51内にある設置台
2の」二に基体10を設置して原料ガスを導入口12か
ら流入し、熱電子放射材52を通して排出口14から排
出し、所定圧力に保ち、熱電子放射材52を加熱する。
The thermionic emitting material method shown in FIG. Thermionic emitting material 52 is heated while maintaining it at a predetermined pressure.

この加熱により原料ガスの加熱活性化と基体表面の温度
を上昇させ、基体10の表面にタイヤセン1〜被膜を析
出形成させる。、 第6図の高周波によるプラズマ放電方法は、容器61内
にある設置台2の上に基体10を設置して原料ガスを導
入1」12から流入し、一方から排、出し、所定圧力に
保ち、容器の中央外周部に設けた高周波コイル62に所
定の周波数と所定の出力で基体110の周囲にプラズマ
放電を発生させる。
This heating activates the raw material gas and increases the temperature of the substrate surface, causing Tiase 1 to film to be deposited and formed on the surface of the substrate 10. , In the high-frequency plasma discharge method shown in FIG. 6, the base 10 is placed on the installation stand 2 in the container 61, the raw material gas is introduced from 1'' 12, and is discharged from one side, and the pressure is maintained at a predetermined pressure. A plasma discharge is generated around the base 110 at a predetermined frequency and a predetermined output using a high frequency coil 62 provided at the central outer circumference of the container.

このプラズマ放電によって原料ガスの加熱活性化と基体
表面の温度を上昇させ、基体10の表面にダイヤモンド
被膜を析出形成させる。
This plasma discharge activates the raw material gas by heating and increases the temperature of the substrate surface, causing a diamond coating to be deposited and formed on the surface of the substrate 10.

これら他の実施例も第1実施例と同様効果が得られる。These other embodiments also provide the same effects as the first embodiment.

なお、上記実施例では基体として基板を用いているか、
チップなとの工具、スピーカの振動板なとであっても良
い。
In addition, in the above embodiment, whether a substrate is used as the base material or
It may be a tool such as a chip, or a diaphragm for a speaker.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例を示すマイクロ波によるプラ
ズマ放電によってグイ−\・モント被膜を析出させる析
出形成装置の正面概略図、第2図はその要部の拡大図、
第3図は本実施例による基体表面の拡大図、第4図は比
較例による基体表面の拡大図、第5図は本発明の他の実
施例にかかるタイヤモンド被膜析出形成装置の正面概略
図、第6図はさらに他の実施例にかかるタイヤモンl〜
被膜析出形成装置の止面概略図である。 図中 4・・・超行波振動子 10・・基体 32・発
振器 52 ・熱′電子放射材 62・・・高周波コイ
FIG. 1 is a schematic front view of a deposition forming apparatus for depositing a Gouy-\-Mont film by plasma discharge using microwaves, showing an embodiment of the present invention, and FIG. 2 is an enlarged view of the main parts thereof.
FIG. 3 is an enlarged view of the substrate surface according to the present example, FIG. 4 is an enlarged view of the substrate surface according to the comparative example, and FIG. 5 is a schematic front view of a tire bond film deposition forming apparatus according to another example of the present invention. , FIG. 6 shows a tire monitor according to still another embodiment.
FIG. 3 is a schematic diagram of the end surface of the film deposition forming apparatus. In the figure: 4... Super wave oscillator 10... Substrate 32... Oscillator 52 - Thermionic electron emitting material 62... High frequency coil

Claims (1)

【特許請求の範囲】 1)炭素源ガスを含み、熱電子放射材または高周波もし
くはマイクロ波によるプラズマ放電などによって活性化
された原料ガス中に、加熱基体を置くことによって、前
記基体の表面にダイヤモンド被膜を析出形成する方法に
おいて、 前記基体を高い振動数で振動させながら成膜することを
特徴とするダイヤモンド被膜の析出形成方法。
[Claims] 1) By placing a heated substrate in a raw material gas containing carbon source gas and activated by a thermionic radiation material or plasma discharge by high frequency or microwave, diamonds are formed on the surface of the substrate. A method for depositing and forming a diamond film, characterized in that the film is formed while vibrating the substrate at a high frequency.
JP9527188A 1988-04-18 1988-04-18 Deposition of diamond coating film Pending JPH01270596A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9527188A JPH01270596A (en) 1988-04-18 1988-04-18 Deposition of diamond coating film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9527188A JPH01270596A (en) 1988-04-18 1988-04-18 Deposition of diamond coating film

Publications (1)

Publication Number Publication Date
JPH01270596A true JPH01270596A (en) 1989-10-27

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP9527188A Pending JPH01270596A (en) 1988-04-18 1988-04-18 Deposition of diamond coating film

Country Status (1)

Country Link
JP (1) JPH01270596A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999064085A1 (en) * 1998-06-09 1999-12-16 Franz Herbst Method for producing biocompatible surfaces
US6171674B1 (en) * 1993-07-20 2001-01-09 Semiconductor Energy Laboratory Co., Ltd. Hard carbon coating for magnetic recording medium
US6835523B1 (en) * 1993-05-09 2004-12-28 Semiconductor Energy Laboratory Co., Ltd. Apparatus for fabricating coating and method of fabricating the coating
CN111286713A (en) * 2020-02-17 2020-06-16 北京科技大学 High-efficiency treatment method and device for diamond micro powder

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01261298A (en) * 1988-04-11 1989-10-18 Idemitsu Petrochem Co Ltd Synthesis of diamond

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01261298A (en) * 1988-04-11 1989-10-18 Idemitsu Petrochem Co Ltd Synthesis of diamond

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6835523B1 (en) * 1993-05-09 2004-12-28 Semiconductor Energy Laboratory Co., Ltd. Apparatus for fabricating coating and method of fabricating the coating
US6171674B1 (en) * 1993-07-20 2001-01-09 Semiconductor Energy Laboratory Co., Ltd. Hard carbon coating for magnetic recording medium
US6183816B1 (en) 1993-07-20 2001-02-06 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating the coating
US6468617B1 (en) 1993-07-20 2002-10-22 Semiconductor Energy Laboratory Co., Ltd. Apparatus for fabricating coating and method of fabricating the coating
WO1999064085A1 (en) * 1998-06-09 1999-12-16 Franz Herbst Method for producing biocompatible surfaces
CN111286713A (en) * 2020-02-17 2020-06-16 北京科技大学 High-efficiency treatment method and device for diamond micro powder

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