JPH01223414A - Led packaging body for electronic device - Google Patents
Led packaging body for electronic deviceInfo
- Publication number
- JPH01223414A JPH01223414A JP63050852A JP5085288A JPH01223414A JP H01223414 A JPH01223414 A JP H01223414A JP 63050852 A JP63050852 A JP 63050852A JP 5085288 A JP5085288 A JP 5085288A JP H01223414 A JPH01223414 A JP H01223414A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- led chip
- liquid crystal
- electrode
- electronic device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004806 packaging method and process Methods 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 239000011521 glass Substances 0.000 claims abstract description 8
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 16
- 229910000679 solder Inorganic materials 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 2
- 238000004904 shortening Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 10
- 230000001681 protective effect Effects 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011034 rock crystal Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Led Device Packages (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
【発明の詳細な説明】
(技術分野)
本発明は巌晶デイスプレィ、液晶シャッタアレイ、等倍
センサなどの電子装置の照明用LED(発光ダイオード
)実装体に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Technical Field) The present invention relates to an LED (light emitting diode) package for illuminating electronic devices such as a rock crystal display, a liquid crystal shutter array, and a 1x sensor.
(従来技術)
液晶デイスプレィや液晶シャッタアレイなどの電子装置
の照明装置は、電子装置とは別に組み立てられて電子装
置に取りつけられている。(Prior Art) A lighting device for an electronic device such as a liquid crystal display or a liquid crystal shutter array is assembled separately from the electronic device and attached to the electronic device.
そのため、電子装置と照明装置との位置関係の調整が必
要である。電子装置と照明装置が離れているため、照明
装置に高出力が必要である・また・照明装置用の基板や
支持材などの部材が必要になり1部品点数が増加して、
小型化、薄型化、低価格化が困!である。Therefore, it is necessary to adjust the positional relationship between the electronic device and the lighting device. Because the electronic equipment and lighting equipment are separated, the lighting equipment requires high output power.Additionally, members such as substrates and support materials for the lighting equipment are required, which increases the number of parts.
It is difficult to make it smaller, thinner, and cheaper! It is.
(目的)
本発明は光源の出力を小さくすることができ、部品点数
を少なくして小型化、薄型化も可能な電子装置照明用の
LED実装体を提供することを目的とするものである。(Objective) It is an object of the present invention to provide an LED mounting body for lighting an electronic device, which can reduce the output of a light source, and can also be made smaller and thinner by reducing the number of parts.
(構成)
本発明のLED実装体は、照明しようとする電子装置の
基板に一体的に実装したものである。(Structure) The LED mounting body of the present invention is integrally mounted on the substrate of an electronic device to be illuminated.
すなわち、本発明のLED実装体では、表面に電子装置
が形成された透明ガラス製基板の裏面に電極が設けられ
、その電極にLEDチップがフェイスダウン・ボンディ
ング法により実装され、LEDチップからの発光が前記
基板を通して表面側へ取り出される。That is, in the LED mounting body of the present invention, an electrode is provided on the back surface of a transparent glass substrate on which an electronic device is formed, and an LED chip is mounted on the electrode by a face-down bonding method, so that light emission from the LED chip is is taken out to the front side through the substrate.
以下、実施例について具体的に説明する。Examples will be specifically described below.
第1図は本発明を液晶デイスプレィや液晶シャツタに適
用した例を示したものである。FIG. 1 shows an example in which the present invention is applied to a liquid crystal display or a liquid crystal shirt.
lは透明ガラス製の基板である。基板1の表面側(図で
は下側)には液晶シャッタ又は液晶デイスプレィである
液晶素子2が形成されている。液晶素子2は、表面側の
透明ガラス製基板3との間に液晶層6を挟んで透明電極
4,5が設けられた構造をしている。1 is a transparent glass substrate. A liquid crystal element 2, which is a liquid crystal shutter or a liquid crystal display, is formed on the front side (lower side in the figure) of the substrate 1. The liquid crystal element 2 has a structure in which transparent electrodes 4 and 5 are provided with a liquid crystal layer 6 interposed between it and a transparent glass substrate 3 on the front side.
基板1の裏面側(図では上側)では照明用のLEDチッ
プ7が紙面垂直方向に複数個実装されている。基板1の
裏面上には電極8が形成され、絶縁保護膜9で被覆され
ている。LEDチップ7を接続する部分は電極8が露出
し、その接続部分にはバンプ10と半田バンプ11によ
ってLEDチップ7がフェイスダウン・ボンディング法
により接続されている。On the back side (upper side in the figure) of the substrate 1, a plurality of LED chips 7 for illumination are mounted in a direction perpendicular to the plane of the paper. An electrode 8 is formed on the back surface of the substrate 1 and covered with an insulating protective film 9. The electrode 8 is exposed at the portion where the LED chip 7 is connected, and the LED chip 7 is connected to the connection portion using bumps 10 and solder bumps 11 by face-down bonding.
本実施例において、LEDチップ7の発光12は基板l
の裏面側から基板!を透過して表面側の液晶素子2を照
射する。In this embodiment, the light emission 12 of the LED chip 7 is caused by the substrate l.
Board from the back side! The light passes through and irradiates the liquid crystal element 2 on the front side.
第2図は本発明を等倍センサに適用した実施例を表わす
ものである。FIG. 2 shows an embodiment in which the present invention is applied to a same-magnification sensor.
20は透明ガラス製基板であり、その表面(図では上側
)には等倍センサ部21が形成されている。等倍センサ
部21では基板20上に0.1μmP1度の厚さのクロ
ム(Cr)膜22が形成されてパターン化され、その上
に厚さ0.3μm程度の絶縁膜S i N 23が形成
されてパターン化され、絶縁膜23上には0.6μm程
度の厚さのアモルファス・シリコン膜24が形成されて
パターン化され、その上に0.2μm程度の厚さのN+
アモルファス・シリコン膜25が形成されてパターン化
されている。26は厚さ1.0μm程度のアルミニウム
の電極である。これにより、等倍センサ部21には受光
部27.蓄積キャパシタ28及び薄膜トランジスタ29
が構成されている。Reference numeral 20 denotes a transparent glass substrate, on the surface (upper side in the figure) of which a same-magnification sensor section 21 is formed. In the equal-magnification sensor section 21, a chromium (Cr) film 22 with a thickness of 0.1 μm P1 degree is formed on a substrate 20 and patterned, and an insulating film S i N 23 with a thickness of about 0.3 μm is formed on it. An amorphous silicon film 24 with a thickness of about 0.6 μm is formed and patterned on the insulating film 23, and an N+ film 24 with a thickness of about 0.2 μm is formed on the insulating film 23.
An amorphous silicon film 25 is formed and patterned. 26 is an aluminum electrode with a thickness of about 1.0 μm. As a result, the light receiving section 27. Storage capacitor 28 and thin film transistor 29
is configured.
受光部27に隣接して受光窓30が開けられ、基板20
の裏面側から照射光が入射できるようになっており、受
光部27には原稿31がらの反射光を受光する開口部が
設けられている。A light receiving window 30 is opened adjacent to the light receiving section 27 and the substrate 20
The irradiation light can enter from the back side of the original 31, and the light receiving section 27 is provided with an opening for receiving the reflected light from the original 31.
32は等倍センサ部21を保護する表面保護膜であり、
その上には原稿31との摺動摩耗から保Sする厚さ50
μm程度のガラス層33が設けられている。32 is a surface protective film that protects the same-size sensor section 21;
On top of that is a thickness of 50 mm to protect it from sliding wear with the original 31.
A glass layer 33 having a thickness of approximately μm is provided.
基板20の裏面(図では下側)には原稿31を照射する
ための照明用LEDチップ34が紙面垂直方向に複数個
実装されている。基板2oの裏面上には電極35が形成
され、絶縁保護膜36で被われている。LEDチップ3
4を接続するために、電極35が露出した部分にはバン
プ37と半田バンプ38によってLEDチップ34が接
続されている。A plurality of illumination LED chips 34 for illuminating the original 31 are mounted on the back surface (lower side in the figure) of the substrate 20 in a direction perpendicular to the plane of the paper. An electrode 35 is formed on the back surface of the substrate 2o and covered with an insulating protective film 36. LED chip 3
4, the LED chip 34 is connected to the exposed portion of the electrode 35 by bumps 37 and solder bumps 38.
本実施例において、LEDチップ34の発光39は基板
20の裏面側から基板20を通って表面側の原稿31に
入射し、原稿31からの反射光が受光部27で受光され
て検出される。In this embodiment, the light emitted 39 from the LED chip 34 passes through the substrate 20 from the back side of the substrate 20 and enters the document 31 on the front side, and the reflected light from the document 31 is received and detected by the light receiving section 27.
(効果)
本発明では照明用LEDチップを電子装置が形成されて
いる基板の裏面にフェイスダウン・ボンディング法によ
り実装したので、照明用光源としてのLEDチップと被
照射面との距離を短かくすることができ、光源の出力を
小さくすることができる。(Effects) In the present invention, the lighting LED chip is mounted on the back surface of the substrate on which the electronic device is formed by face-down bonding, so the distance between the LED chip as the lighting light source and the irradiated surface is shortened. This allows the output of the light source to be reduced.
LEDチップを装置の基板の裏面に直接実装したことに
より、装置全体を薄型化し、小型化することができる0
例えば、LEDチップの厚みが300μm程度、バンプ
の高さが10μm程度、半田バンプの高さが50μm程
度であるとすれば。By mounting the LED chip directly on the back side of the device's substrate, the entire device can be made thinner and smaller.
For example, if the thickness of the LED chip is about 300 μm, the height of the bump is about 10 μm, and the height of the solder bump is about 50 μm.
LED実装体の全体の厚みが360μm程度と薄くなる
。The overall thickness of the LED mounting body is reduced to about 360 μm.
第1図及び第2図はそれぞれ実施例を示す断面図である
。
l、20・・・・・・ガラス基板、
2・・・・・・液晶素子、
7.34・・・・・・LEDチップ、
8.35・・・・・・電極、
21・・・・・・等倍センサ部。FIG. 1 and FIG. 2 are sectional views each showing an embodiment. l, 20... Glass substrate, 2... Liquid crystal element, 7.34... LED chip, 8.35... Electrode, 21...・・Same size sensor part.
Claims (1)
裏面に電極が設けられ、その電極にLEDチップがフェ
イスダウン・ボンディング法により実装され、LEDチ
ップからの発光が前記基板を通して表面側へ取り出され
るLED実装体。(1) An electrode is provided on the back side of a transparent glass substrate on which an electronic device is formed, and an LED chip is mounted on the electrode by face-down bonding, and the light emitted from the LED chip passes through the substrate and reaches the front side. LED mounting body being taken out.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63050852A JPH01223414A (en) | 1988-03-02 | 1988-03-02 | Led packaging body for electronic device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63050852A JPH01223414A (en) | 1988-03-02 | 1988-03-02 | Led packaging body for electronic device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01223414A true JPH01223414A (en) | 1989-09-06 |
Family
ID=12870252
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63050852A Pending JPH01223414A (en) | 1988-03-02 | 1988-03-02 | Led packaging body for electronic device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01223414A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6333522B1 (en) | 1997-01-31 | 2001-12-25 | Matsushita Electric Industrial Co., Ltd. | Light-emitting element, semiconductor light-emitting device, and manufacturing methods therefor |
EP1325521A1 (en) * | 2000-09-12 | 2003-07-09 | Luminary Logic Limited | Semiconductor light emitting element formed on a clear or translucent substrate |
JP2007226246A (en) * | 2006-02-23 | 2007-09-06 | Samsung Electronics Co Ltd | Light emitting diode substrate, method of manufacturing same, and liquid crystal display device using same |
WO2008117800A1 (en) * | 2007-03-26 | 2008-10-02 | Rintaro Nishina | Reflective optical sensor |
WO2018216698A1 (en) * | 2017-05-25 | 2018-11-29 | スタンレー電気株式会社 | Transparent panel provided with light emitting function |
-
1988
- 1988-03-02 JP JP63050852A patent/JPH01223414A/en active Pending
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6333522B1 (en) | 1997-01-31 | 2001-12-25 | Matsushita Electric Industrial Co., Ltd. | Light-emitting element, semiconductor light-emitting device, and manufacturing methods therefor |
US6597019B2 (en) | 1997-01-31 | 2003-07-22 | Matsushita Electric Industrial Co., Ltd | Semiconductor light-emitting device comprising an electrostatic protection element |
US6642072B2 (en) | 1997-01-31 | 2003-11-04 | Matsushita Electric Industrial Co., Ltd. | Light-emitting element, semiconductor light-emitting device, and manufacturing methods therefor |
EP1325521A1 (en) * | 2000-09-12 | 2003-07-09 | Luminary Logic Limited | Semiconductor light emitting element formed on a clear or translucent substrate |
EP1325521A4 (en) * | 2000-09-12 | 2006-08-23 | Luminary Logic Ltd | Semiconductor light emitting element formed on a clear or translucent substrate |
JP2007226246A (en) * | 2006-02-23 | 2007-09-06 | Samsung Electronics Co Ltd | Light emitting diode substrate, method of manufacturing same, and liquid crystal display device using same |
WO2008117800A1 (en) * | 2007-03-26 | 2008-10-02 | Rintaro Nishina | Reflective optical sensor |
JPWO2008117800A1 (en) * | 2007-03-26 | 2010-07-15 | 仁科 ▲りん▼太郎 | Reflective light sensor |
WO2018216698A1 (en) * | 2017-05-25 | 2018-11-29 | スタンレー電気株式会社 | Transparent panel provided with light emitting function |
JP2018197830A (en) * | 2017-05-25 | 2018-12-13 | スタンレー電気株式会社 | Transparent panel having light emitting function |
US10955700B2 (en) | 2017-05-25 | 2021-03-23 | Stanley Electric Co., Ltd. | Transparent panel provided with light emitting function |
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