JPH01198467A - Thin film-manufacturing equipment - Google Patents
Thin film-manufacturing equipmentInfo
- Publication number
- JPH01198467A JPH01198467A JP2455688A JP2455688A JPH01198467A JP H01198467 A JPH01198467 A JP H01198467A JP 2455688 A JP2455688 A JP 2455688A JP 2455688 A JP2455688 A JP 2455688A JP H01198467 A JPH01198467 A JP H01198467A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- evaporated
- crucible
- heating
- heaters
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 6
- 239000010409 thin film Substances 0.000 claims abstract description 21
- 239000000463 material Substances 0.000 claims abstract description 20
- 238000010438 heat treatment Methods 0.000 claims abstract description 10
- 239000002245 particle Substances 0.000 claims description 22
- 230000008020 evaporation Effects 0.000 claims description 10
- 238000001704 evaporation Methods 0.000 claims description 10
- 238000007740 vapor deposition Methods 0.000 abstract description 13
- 238000007664 blowing Methods 0.000 abstract 1
- 230000006866 deterioration Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000002347 injection Methods 0.000 description 9
- 239000007924 injection Substances 0.000 description 9
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000003292 glue Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は、るつぼ内の蒸着材料を真空雰囲中で加熱ヒー
タによって加熱して蒸発させ、その蒸発粒子を基板等の
試料に衝突させることによってその表面上に薄膜を形成
する装置に関する。[Detailed Description of the Invention] <Industrial Application Field> The present invention involves heating and vaporizing a vapor deposition material in a crucible with a heater in a vacuum atmosphere, and causing the vaporized particles to collide with a sample such as a substrate. This invention relates to an apparatus for forming a thin film on the surface thereof.
〈従来の技術〉
従来、上述の装置は、例えば第2図に示すように、真空
チャンバ(図示せず)内に、蒸着材料Mを収容し、かつ
、噴射孔122aを備えたるつぼ122と、その側壁周
辺を囲ってなる加熱ヒータ123とを備えてなる蒸発源
120.および試料Tが設けられており、蒸着材料Mを
加熱ヒータ123によって加熱して蒸発させ、噴射孔1
22aから吹き出す蒸発粒子ビームBを試料Tの表面に
照射することによって、その試料T表面上に薄膜を形成
するよう構成されている。<Prior Art> Conventionally, as shown in FIG. 2, for example, the above-mentioned apparatus includes a crucible 122 that houses a vapor deposition material M in a vacuum chamber (not shown) and is provided with an injection hole 122a. An evaporation source 120 comprising a heater 123 surrounding the side wall of the evaporation source 120. and a sample T are provided, the vapor deposition material M is heated and evaporated by the heater 123, and the injection hole 1
It is configured to form a thin film on the surface of the sample T by irradiating the surface of the sample T with the evaporated particle beam B blown out from 22a.
なお、蒸着源120はモリブチど製のりフレフタ141
.142によって二重にシールドされており、蒸着源1
20の熱が真空チャンバ内に散乱することを防いでいる
。Note that the vapor deposition source 120 is a glue flutter 141 made of molybutton.
.. 142, and the deposition source 1
20 heat is prevented from scattering into the vacuum chamber.
〈発明が解決しようとする課題〉
ところで、従来の装置構成によれば、噴射孔122aか
ら吹き出す蒸発粒子の一部が、るつぼ122の側壁周辺
に敗乱し加熱ヒータ123の表面に付着する虞れがある
。この付着物は加熱ヒータ123によって再び加熱され
て再蒸発し、その再蒸発物が蒸発粒子ビームBの流れを
乱してしまい、得られた薄膜の均質性が低下するという
問題があった。<Problems to be Solved by the Invention> However, according to the conventional device configuration, there is a risk that some of the evaporated particles blown out from the injection hole 122a may be scattered around the side wall of the crucible 122 and adhere to the surface of the heater 123. There is. This deposit is heated again by the heater 123 and re-evaporated, and the re-evaporated material disturbs the flow of the evaporated particle beam B, resulting in a problem that the homogeneity of the obtained thin film is reduced.
また、例えば、先に所定の蒸着材料によって薄膜を形成
した後、これに続いて、先の蒸着材料とは異なる材料を
用いて次の蒸着を行う場合、先の蒸着によって加熱ヒー
タ123表面に付着した蒸着材料の散乱粒子が、次の蒸
着時に再蒸発し、その再蒸発粒子つまり先の蒸着材料が
次の薄膜に混入し、次の蒸着によって得られた薄膜の純
度が悪くなるという問題がある。Further, for example, if a thin film is first formed using a predetermined vapor deposition material and then the next vapor deposition is performed using a material different from the previous vapor deposition material, the thin film may be deposited on the surface of the heater 123 by the previous vapor deposition. There is a problem in that the scattered particles of the deposited material are re-evaporated during the next deposition, and the re-evaporated particles, that is, the previously deposited material, are mixed into the next thin film, reducing the purity of the thin film obtained by the next deposition. .
本発明の目的は、蒸着材料の蒸発粒子が加熱し−タに付
着することを抑え、もって、良質な薄膜を得ることので
きる、薄膜製造袋We提供することにある。An object of the present invention is to provide a thin film manufacturing bag that can prevent evaporated particles of a vapor deposition material from adhering to a heated heater, thereby producing a high-quality thin film.
〈課題を解決するための手段〉
上記目的を達成するための構成を、実施例に対応する第
1図を参照しつつ説明すると、本発明は、蒸発粒子が試
料Tに向かって進行する領域Fと加熱ヒータ3との間に
、蒸発粒子の加熱ヒータ3への進行を遮る形状を有する
板(リフレクタ)4を設けたことを特徴としている。<Means for Solving the Problems> A configuration for achieving the above object will be described with reference to FIG. 1 corresponding to the embodiment. The device is characterized in that a plate (reflector) 4 having a shape that blocks the progress of evaporated particles toward the heater 3 is provided between the heater 3 and the heater 3 .
〈作用〉
蒸発材料Mの蒸発粒子の一部がるつぼ1の周辺に散乱し
ても、その散乱粒子の加熱ヒータ3への進行を板4によ
って遮ることができ、加熱ヒータ3表面に蒸発粒子が付
着することはない。<Function> Even if some of the evaporated particles of the evaporation material M are scattered around the crucible 1, the progress of the scattered particles toward the heater 3 can be blocked by the plate 4, and the evaporated particles are not deposited on the surface of the heater 3. It will not stick.
〈実施例〉 本発明の実施例を、以下、図面に基づいて説明する。<Example> Embodiments of the present invention will be described below based on the drawings.
第1図は、本発明の実施例の要部縦断面図であって、分
子線エピタキシ装置に本発明を適用した例を示している
。FIG. 1 is a longitudinal sectional view of a main part of an embodiment of the present invention, and shows an example in which the present invention is applied to a molecular beam epitaxy apparatus.
蒸着材料Mを収容し、かつ、噴射孔2aを備えたるつぼ
2と段付の円筒形状を有するリフレクタ4とが一体に形
成されている。リフレクタ4の上部側には二つの貫通孔
4a、4bが設けられており、るつぼ2の噴射孔2aの
上方はりフレフタ4の外部に開放されている。また、リ
フレクタ4の底部に貫通孔4cが設けられており、るっ
ぽ2に形成された熱電対挿入用の孔2bが外部に露呈し
ている。さらに、リフレクタ4の面4dには所定の本数
の支持部材41・・・41が設けられている。A crucible 2 containing a vapor deposition material M and having an injection hole 2a and a reflector 4 having a stepped cylindrical shape are integrally formed. Two through holes 4a and 4b are provided on the upper side of the reflector 4, and are open to the outside of the reflector 4 above the injection hole 2a of the crucible 2. Further, a through hole 4c is provided at the bottom of the reflector 4, and a hole 2b for inserting a thermocouple formed in the roof 2 is exposed to the outside. Further, a predetermined number of support members 41...41 are provided on the surface 4d of the reflector 4.
このようなりフレフタ4は、真空チャンバ1内に設けら
れたウォータジャケット5の孔部51・・・51に支持
部材41・・・41を介して着脱自在に装着され、装着
した際に、その内部のるつぼ2の側方周辺は、ウォータ
シャット5の内側に設けられた加熱ヒータ3によって囲
われる。また、るつぼ2の噴射孔2aの上方には例えば
基板等の試料Tが配設されている。なお、るつぼ2の底
部の孔2bには、その壁体の温度を測定するための熱電
対6が挿入されている。In this way, the flaper 4 is removably attached to the holes 51...51 of the water jacket 5 provided in the vacuum chamber 1 via the support members 41...41, and when attached, the inside of the The lateral periphery of the crucible 2 is surrounded by a heater 3 provided inside a water shut 5. Further, above the injection hole 2a of the crucible 2, a sample T such as a substrate is placed. Note that a thermocouple 6 is inserted into the hole 2b at the bottom of the crucible 2 to measure the temperature of its wall.
以上の構成により、るつぼ2の側壁部を加熱ヒータ3に
より加熱することによって内部の蒸着材料Mを蒸発させ
、噴射孔2bから吹き出す蒸発粒子ビームBを試料T表
面に照射することによってその表面上に薄膜を形成する
ことができる。ここで、噴射孔2bから吹き出す蒸発粒
子の一部がるつぼ20周辺に散乱しても、その散乱粒子
は加熱ヒータ3の手前でリフレクタ4の壁体によって、
その進行が遮られることになり、加熱し−タ3の表面に
蒸着材料Mの蒸発粒子が付着することはない。また、ウ
ォータジャケット5の上方は、リフレクタ4によって覆
われており、加熱ヒータ3の熱が真空チャンバ1内に散
乱することはない。With the above configuration, the side wall of the crucible 2 is heated by the heater 3 to evaporate the vapor deposition material M inside, and the surface of the sample T is irradiated with the evaporated particle beam B blown out from the injection hole 2b. A thin film can be formed. Here, even if some of the evaporated particles blown out from the injection hole 2b are scattered around the crucible 20, the scattered particles are prevented by the wall of the reflector 4 in front of the heater 3.
Its progress is blocked, and evaporated particles of the evaporation material M do not adhere to the surface of the heater 3. Further, the upper part of the water jacket 5 is covered with a reflector 4, so that the heat of the heater 3 is not scattered into the vacuum chamber 1.
なお、本実施例によると、るつぼ2とりフレフタ4とを
一体に形成し、るつぼ2をリフレクタ4を介して真空チ
ャンバ1内の所定位置に脱着自在に装着するよう構成し
ており、リフレクタ4を上方に引き抜くだけでるつぼ2
の交換を行うことができる。ここで、従来の装置による
と、るつぼは、真空チャンバ内にフラシジによって固着
されているか、もしくは真空チャレバ内に設けられた加
熱ヒータ部内に沈め込まれており、前者の場合には、る
つぼの交換を行う毎にフランジのボルト・ナンドをはず
す等の作業が必要になり、また、後者の場合には、治具
等を用いてるつぼを加熱ヒータ部から取り出す必要があ
り、いずれの場合でも、るつぼを容易に交換できなかっ
たが、本実施例では、これらの煩雑な作業を要すること
なく、るつぼの交換を行うことができる。According to this embodiment, the crucible 2 and the flutter 4 are integrally formed, and the crucible 2 is detachably attached to a predetermined position in the vacuum chamber 1 via the reflector 4. Crucible 2 by simply pulling it upwards
can be exchanged. Here, according to the conventional apparatus, the crucible is either fixed in the vacuum chamber by a flush cage or sunk into a heating section provided in the vacuum chamber, and in the former case, the crucible is replaced. In the latter case, it is necessary to remove the crucible from the heater section using a jig, etc. However, in this embodiment, the crucible can be replaced without requiring these complicated operations.
以上の実施例では、るつぼ2とりフレフタ4を一体に形
成しているが、必ずしも一体に形成する必要はない。In the above embodiments, the crucible 2 and the flask 4 are integrally formed, but they do not necessarily need to be integrally formed.
また、以上は、分子線エピタキシ装置に本発明を適用し
た例について説明したが、本発明はこれに限られること
なく、るつぼの噴射孔から吹き出した蒸発粒子ビームを
イオン化し、さらに加速して試料表面に衝突させること
によってその表面上に薄膜を形成する、いわゆるクラス
タイオンビーム装置にも適用できるし、また、上方が開
放されたるつぼを備えた他の薄膜製造装置にも適用でき
る。In addition, although the above has described an example in which the present invention is applied to a molecular beam epitaxy apparatus, the present invention is not limited to this, and the evaporated particle beam blown out from the injection hole of the crucible is ionized, further accelerated, and sampled. It can be applied to a so-called cluster ion beam device that forms a thin film on a surface by colliding with the surface, and can also be applied to other thin film manufacturing devices equipped with a crucible whose top is open.
〈発明の効果〉
以上説明したように、本発明によれば、蒸発粒子が試料
に進行する領域と加熱ヒータとの間に板を設け、この板
によって蒸発粒子の加熱ヒータへの進行を遮るよう構成
したので、蒸発粒子が加熱し−タに付着することがなく
なる結果、薄膜の均質性の向上を図ることができる。ま
た、例えば、異なった蒸着材料の蒸着作業を続けて行う
場合でも、先の蒸着材料が後の蒸着によって得られた薄
膜に混入することがなく、後の蒸着による薄膜の純度の
低減を抑えることができる。<Effects of the Invention> As explained above, according to the present invention, a plate is provided between the area where evaporated particles advance to the sample and the heater, and this plate blocks the evaporated particles from advancing toward the heater. With this structure, the evaporated particles will not adhere to the heated heater, and as a result, the homogeneity of the thin film can be improved. In addition, for example, even when performing evaporation operations of different evaporation materials in succession, the previous evaporation material will not be mixed into the thin film obtained by subsequent evaporation, and the reduction in purity of the thin film due to subsequent evaporation can be suppressed. Can be done.
ここで、本発明は、板とるつぼとを一体に形成し、るつ
ぼを板を介して真空チャンバ内の所定位置に脱着自在に
装着するよう構成することも可能で、この場合、上記の
効果に加えて、るつぼの交換作業が、従来に比してきわ
めて容易に、がっ、短時間に行えるという効果もある。Here, the present invention can also be configured such that the plate and the crucible are integrally formed and the crucible is detachably attached to a predetermined position in the vacuum chamber via the plate. In this case, the above effects can be obtained. In addition, the crucible can be replaced much more easily and in a shorter time than in the past.
第1図鴎本発明の実施例の要部縦断面図、第2図は薄膜
製造装置の・従来例を示す要部縦断面図である。
1・・・真空チャンバ
2・・・るつぼ
3・・・加熱ヒータ
4・・・リフレクタ
F・・・蒸発粒子進行領域
M・・・蒸着材料
第1図
第2図FIG. 1 is a vertical cross-sectional view of a main part of an embodiment of the present invention, and FIG. 2 is a vertical cross-sectional view of a main part of a conventional example of a thin film manufacturing apparatus. 1... Vacuum chamber 2... Crucible 3... Heater 4... Reflector F... Evaporated particle advancing region M... Vapor deposition material Fig. 1 Fig. 2
Claims (1)
ってなる加熱ヒータによって真空雰囲中で加熱すること
により、その材料を蒸発させて試料表面に薄膜を形成す
る装置において、蒸発粒子が上記試料に向かって進行す
る領域と上記加熱ヒータとの間に、蒸発粒子の当該加熱
ヒータへの進行を遮る形状を有する板を設けたことを特
徴とする、薄膜製造装置。(1) In a device that evaporates the material to form a thin film on the surface of the sample by heating the evaporation material in the crucible in a vacuum atmosphere using a heater that surrounds the side wall of the crucible, evaporated particles A thin film manufacturing apparatus, characterized in that a plate having a shape that blocks the progress of evaporated particles to the heater is provided between the region advancing toward the sample and the heater.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2455688A JPH01198467A (en) | 1988-02-03 | 1988-02-03 | Thin film-manufacturing equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2455688A JPH01198467A (en) | 1988-02-03 | 1988-02-03 | Thin film-manufacturing equipment |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01198467A true JPH01198467A (en) | 1989-08-10 |
Family
ID=12141432
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2455688A Pending JPH01198467A (en) | 1988-02-03 | 1988-02-03 | Thin film-manufacturing equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01198467A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8025735B2 (en) | 2005-03-09 | 2011-09-27 | Samsung Mobile Display Co., Ltd. | Multiple vacuum evaporation coating device and method for controlling the same |
-
1988
- 1988-02-03 JP JP2455688A patent/JPH01198467A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8025735B2 (en) | 2005-03-09 | 2011-09-27 | Samsung Mobile Display Co., Ltd. | Multiple vacuum evaporation coating device and method for controlling the same |
US8623455B2 (en) | 2005-03-09 | 2014-01-07 | Samsung Display Co., Ltd. | Multiple vacuum evaporation coating device and method for controlling the same |
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