JPH01157445U - - Google Patents
Info
- Publication number
- JPH01157445U JPH01157445U JP4653288U JP4653288U JPH01157445U JP H01157445 U JPH01157445 U JP H01157445U JP 4653288 U JP4653288 U JP 4653288U JP 4653288 U JP4653288 U JP 4653288U JP H01157445 U JPH01157445 U JP H01157445U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- external electrode
- electrode lead
- out terminal
- case
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 2
Landscapes
- Lead Frames For Integrated Circuits (AREA)
- Thyristors (AREA)
Description
第１図はこの考案による外部電極引き出し用端
子の一実施例の部分正面図、第２図は同じく従来
の端子の一例の部分正面図である。
１……端子、１１……細い部分、１２……太い
部分。
FIG. 1 is a partial front view of an embodiment of an external electrode lead-out terminal according to this invention, and FIG. 2 is a partial front view of an example of a conventional terminal. 1...Terminal, 11...Thin part, 12...Thick part.
Claims (1)
をケース内に有する外部電極引き出し用端子を備
えた半導体装置において、前記外部電極引き出し
用端子が前記ケース内の部分で太い部分と細い部
分とが交互に形成されてなり、かつ、細い部分で
折り曲げられた弯曲部を有していることを特徴と
する電力用半導体装置。 In a semiconductor device including an external electrode lead-out terminal having a curved part in a case for absorbing stress strain due to thermal expansion, the external electrode lead-out terminal has a thick part and a thin part in a part inside the case. A power semiconductor device characterized by having curved portions formed alternately and bent at thinner portions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4653288U JPH01157445U (en) | 1988-04-06 | 1988-04-06 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4653288U JPH01157445U (en) | 1988-04-06 | 1988-04-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01157445U true JPH01157445U (en) | 1989-10-30 |
Family
ID=31272800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4653288U Pending JPH01157445U (en) | 1988-04-06 | 1988-04-06 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01157445U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000208686A (en) * | 1999-01-11 | 2000-07-28 | Fuji Electric Co Ltd | Package structure of power module |
| KR100321849B1 (en) * | 1999-06-29 | 2002-02-01 | 곽정소 | stress shock-absorbing of pole terminal for electronic semiconductor module |
| WO2017060970A1 (en) * | 2015-10-06 | 2017-04-13 | 三菱電機株式会社 | Manufacturing method for semiconductor device |
-
1988
- 1988-04-06 JP JP4653288U patent/JPH01157445U/ja active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000208686A (en) * | 1999-01-11 | 2000-07-28 | Fuji Electric Co Ltd | Package structure of power module |
| KR100321849B1 (en) * | 1999-06-29 | 2002-02-01 | 곽정소 | stress shock-absorbing of pole terminal for electronic semiconductor module |
| WO2017060970A1 (en) * | 2015-10-06 | 2017-04-13 | 三菱電機株式会社 | Manufacturing method for semiconductor device |
| JPWO2017060970A1 (en) * | 2015-10-06 | 2017-11-30 | 三菱電機株式会社 | Manufacturing method of semiconductor device |
| KR20180021192A (en) * | 2015-10-06 | 2018-02-28 | 미쓰비시덴키 가부시키가이샤 | Method for manufacturing semiconductor device |
| US10490422B2 (en) | 2015-10-06 | 2019-11-26 | Mitsubishi Electric Corporation | Manufacturing method for semiconductor device |