JPH01142637A - Photomask blank - Google Patents
Photomask blankInfo
- Publication number
- JPH01142637A JPH01142637A JP62301897A JP30189787A JPH01142637A JP H01142637 A JPH01142637 A JP H01142637A JP 62301897 A JP62301897 A JP 62301897A JP 30189787 A JP30189787 A JP 30189787A JP H01142637 A JPH01142637 A JP H01142637A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- adhesion
- light
- metal silicide
- photomask blank
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 claims abstract description 67
- 239000010408 film Substances 0.000 claims abstract description 29
- 229910052751 metal Inorganic materials 0.000 claims abstract description 24
- 239000002184 metal Substances 0.000 claims abstract description 24
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 22
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 15
- 239000001301 oxygen Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 238000005728 strengthening Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 abstract description 23
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 19
- 230000003014 reinforcing effect Effects 0.000 abstract description 8
- 238000004886 process control Methods 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 4
- 230000015556 catabolic process Effects 0.000 abstract 2
- 238000006731 degradation reaction Methods 0.000 abstract 2
- 239000002318 adhesion promoter Substances 0.000 description 11
- 238000012545 processing Methods 0.000 description 11
- 239000012298 atmosphere Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000002253 acid Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000012369 In process control Methods 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
- 238000010965 in-process control Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- -1 tantalum (Ta) Chemical class 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、ＩＣ，ＬＳＩ等の半導体集積回路のＩＦＪ
３６に用いられるフォトマスクブランクに関するもので
ある。[Detailed Description of the Invention] [Industrial Application Field] The present invention is directed to IFJ of semiconductor integrated circuits such as IC and LSI.
This relates to a photomask blank used in No. 36.
Ｕ従来の技術］
従来より、前記フォトマスクブランクとして、石英カラ
スからなる透明基板上に、金属珪化物からなる遮光性薄
膜を積層させたものが知られている。この場合に、前記
金属珪化物は、例えば、モリブデン珪化物であり、この
金属珪化物による遮光性薄膜は、スパッタリング法、真
空蒸着法等の加工技術により形成されている。U Prior Art] Conventionally, as the photomask blank, one in which a light-shielding thin film made of a metal silicide is laminated on a transparent substrate made of quartz glass is known. In this case, the metal silicide is, for example, molybdenum silicide, and the light-shielding thin film of this metal silicide is formed by a processing technique such as sputtering or vacuum evaporation.
そして、このような構成をなすフォトマスクブランクか
らフォトマスクを形成する場合の一連のフォトリソグラ
フィー工程を簡単に説明すると、次のようである。A series of photolithography steps for forming a photomask from a photomask blank having such a structure will be briefly described as follows.
■ まず、フォトマスクブランクの遮光性薄膜の上にフ
ォトレジスト膜を塗布する。(1) First, a photoresist film is applied on the light-shielding thin film of the photomask blank.
■ 次いで、前記フォトレジスト膜を、所定のパターン
を持ったマスターマスクを使って露光させる。(2) Next, the photoresist film is exposed using a master mask having a predetermined pattern.
■ 次いで、前記フォトレジスト膜を現像して、レジス
トパターンを形成する。(2) Next, the photoresist film is developed to form a resist pattern.
■ 次いで、前記レジストパターンをマスクとして、遮
光性薄膜をドライエツチングする。(2) Next, the light-shielding thin film is dry-etched using the resist pattern as a mask.
■ 次いで、前記レジストパターンを除去することによ
って、金属珪化物からなる遮光性パターンを有したフォ
トマスクとする。(2) Next, by removing the resist pattern, a photomask having a light-shielding pattern made of metal silicide is obtained.
ところで、前述のフォトマスクブランクにおいて、金属
珪化物からなる遮光性薄膜は、フォトレジスト膜（特に
ポジ型フォトレジスト膜、例えば、ヘキスト社製のＡＺ
−１３５０等の場合に顕著）の付着性が悪く、そのまま
前述のフォトリソグラフィー工程を行うと、遮光性薄膜
とフォトレジスト膜との密着性が良くない為に、パター
ンの線幅の細りゃ消失等の不都合が発生する虞れがあっ
た。By the way, in the photomask blank described above, the light-shielding thin film made of metal silicide is a photoresist film (especially a positive photoresist film, such as AZ manufactured by Hoechst).
-1350 etc.), and if the above-mentioned photolithography process is performed as is, the adhesion between the light-shielding thin film and the photoresist film is not good, so the line width of the pattern becomes thinner and disappears. There was a risk that some inconvenience would occur.
そこで、従来では、金属珪化物からなる遮光性薄膜とフ
ォトレジスト膜との密着性を高めるための対策として、
前述したフォトリングラフイー工程中の■の工程（即ち
、フォトレジスト膜を塗布する工程）の前に、予め、フ
ォトマスクブランクの表面に接着促進剤（例えば、ヘキ
サメチルシラザンなど）を塗布することによって、フォ
トマスクブランク表面の特性を改善することができた。Therefore, as a conventional measure to improve the adhesion between the light-shielding thin film made of metal silicide and the photoresist film,
Before step (i.e., the step of applying a photoresist film) in the photophosphorography process described above, an adhesion promoter (for example, hexamethylsilazane, etc.) is applied to the surface of the photomask blank in advance. This made it possible to improve the characteristics of the photomask blank surface.
また、この場合に、接着促進剤の塗布方法としては、ス
ピンコード法あるいは接着促進剤を含んだ雰囲気中にさ
らすことが考えられている。 ［発明が解決しようと
する問題点］
前述のような対策を施した場合、確かに金属珪化物から
なる遮光性薄膜とフォトレジスト膜との密着性を高める
ことができ、従って、密着性の不良に起因した問題が解
決されるが、その反面、製品歩留りの低下や工程管理の
困難化等の新たな問題が発生するに至った。In this case, as a method for applying the adhesion promoter, a spin cord method or exposure to an atmosphere containing the adhesion promoter is considered. [Problems to be Solved by the Invention] When the above-mentioned measures are taken, the adhesion between the light-shielding thin film made of metal silicide and the photoresist film can certainly be improved, and therefore poor adhesion can be prevented. However, on the other hand, new problems such as a decrease in product yield and difficulty in process control have arisen.
つまり、前述の対策は、フォトマスクの製造工程である
フォトリソグラフィー工程の前に、完成したフォトマス
クブランクを対象とした新たな処理工程を設けたもので
ある。そして、さらには、その処理工程における技術は
、フォトマスクブランクの製造工程やフォトリソグラフ
ィー工程に於ける技術に対して異質なもので、そのため
、全く別に専用の装置を用意して、その都度そこへフォ
トマスクブランクを搬出入して処理しなければならない
。そのため、作業工程が大幅に増大して、工程の管理が
困難になるという問題が発生する。In other words, the above-mentioned countermeasure is to provide a new processing step for the completed photomask blank before the photolithography step, which is the photomask manufacturing process. Furthermore, the technology used in the processing process is different from the technology used in the photomask blank manufacturing process and the photolithography process, so a completely separate dedicated device must be prepared and used each time. Photomask blanks must be transported in and out for processing. Therefore, a problem arises in that the number of work steps increases significantly, making it difficult to manage the steps.
また、該処理工程のために、フォトマスクブランク自体
を移動させる機会が増大し、移動時にぶつけて傷をつけ
たり、異物が付着する危険度が高まり、これらによる製
品不良の増大等によって、製品の歩留り低下という一問
題が発生するにの発明は、このような問題点を解決すべ
く提案されたもので、接着促進剤を塗布せずともフォト
マスクブランクの遮光性薄膜の上にフォトレジスト膜を
良好に密着させることができ、従って、従来の接着促進
剤を塗布する処理工程に起因していた製品歩留りの低下
を防止し得、かつ、工程管理を容易にすることができる
新規構造のフォトマスクブランクを提供することを目的
とする。In addition, because of this processing process, the photomask blank itself has an increased chance of being moved, increasing the risk of it being bumped and scratched during movement, and the risk of foreign matter adhering to it.This increases the number of product defects and reduces product yield. This invention was proposed to solve this problem, and it is possible to form a photoresist film on the light-shielding thin film of a photomask blank without applying an adhesion promoter. A photomask blank with a new structure that can be adhered to the adhesive, thereby preventing a decrease in product yield caused by the conventional process of applying an adhesion promoter, and facilitating process control. The purpose is to provide
［問題点を解決するための手段］
この発明に係るフォトマスクブランクは、本発明者等が
問題点の原因となっている接着促進剤による処理工程を
いかにして回避するかを鋭意考究し、実験究明を重ねた
結果解明された事実、即ち、酸素を含有させた金属珪化
物の膜に対しては、フォトレジスト膜が良好に密着する
という事実に基づいてなされたものである。[Means for Solving the Problems] The photomask blank according to the present invention was created by the inventors of the present invention, who have diligently studied how to avoid the treatment process using an adhesion promoter, which is the cause of the problems. This method was based on the fact that a photoresist film adheres well to a metal silicide film containing oxygen, which was discovered through repeated experiments.
そして、この解明した事実に端を発してさらに実験究明
を重ねた結果、本発明に係るフォトマスクブランクは、
透明基板上に金属珪化物からなる遮光性薄膜を形成し、
この遮光性薄膜上に酸素を含有した金属珪化物からなり
、前記遮光膜とレジスｌ〜との接着を強化する接着強化
用の薄膜を設けた構造を呈するに至った。As a result of further experimental investigation based on this clarified fact, the photomask blank according to the present invention is
A light-shielding thin film made of metal silicide is formed on a transparent substrate,
A structure has been developed in which a thin film for reinforcing adhesion is provided on this light-shielding thin film, which is made of a metal silicide containing oxygen and strengthens the adhesion between the light-shielding film and the resist l~.
［作用］
本発明に係るフォトマスクブランクにおいて、接着強化
用薄膜は、金属硅化物からなる遮光性薄膜と組成が似て
おり、遮光性薄膜の場合と同様の薄膜形成技術に因って
形成し得るという点で遮光性薄膜と同質であり、従来の
フォトマスクブランクの製造ラインを使って遮光性薄膜
形成工程の延長として、容易に形成することができる。[Function] In the photomask blank according to the present invention, the adhesion-strengthening thin film has a composition similar to the light-shielding thin film made of metal silicide, and is formed using the same thin film forming technology as that for the light-shielding thin film. It is of the same quality as a light-shielding thin film in that it can be obtained, and can be easily formed as an extension of the light-shielding thin film forming process using a conventional photomask blank manufacturing line.
換言すれば、接着強化用薄膜を形成するために、新規に
専用の装置を導入するような必要が無く、また繁雑な処
理工程が付加されることも無い。In other words, there is no need to introduce a new dedicated device to form the adhesion-strengthening thin film, and no complicated processing steps are added.
しかも、この接着強化用薄膜に対してはフォトレジスト
膜の密着性が良いため、フォトマスクを形成する際に接
着促進剤による処理工程が必要なく、直接、従来例の項
に記載したフォトリングラフィー工程■〜■を実施する
だけで、精度の良いフォトマスクを製作することができ
る。Moreover, since the adhesion of the photoresist film to this adhesion-strengthening thin film is good, there is no need for a treatment process using an adhesion promoter when forming a photomask, and the photoresist film can be directly applied to the photoresist film described in the conventional example section. A highly accurate photomask can be manufactured by simply performing steps ① to ②.
したがって、本発明に係るフォトマスクブランクによれ
ば、フォトマスクの形成に際して従来の接着促進剤を塗
布する処理工程が不要で、該処理工程に起因していた製
品の歩留りの低下を効果的に防止し得るとともに、工程
管理を容易にすることができる。Therefore, according to the photomask blank according to the present invention, the conventional processing step of applying an adhesion promoter is not necessary when forming a photomask, and the decrease in product yield caused by the processing step can be effectively prevented. In addition, process control can be facilitated.
［実施例］
第１図は、本発明に係るフォトマスクブランク１の一実
施例の縦断面図である。[Example] FIG. 1 is a longitudinal sectional view of an example of a photomask blank 1 according to the present invention.
このフォトマスクブランク１は、石英ガラスからなる透
明基板２の一表面上に金属珪化物からなる遮光性薄膜３
を形成し、この遮光性薄膜３上に酸素を含有した金属珪
化物からなる接着強化用薄ｐＡ４を設けたものである。This photomask blank 1 consists of a light-shielding thin film 3 made of metal silicide on one surface of a transparent substrate 2 made of quartz glass.
is formed, and on this light-shielding thin film 3, a thin pA4 for reinforcing adhesion made of a metal silicide containing oxygen is provided.
前記透明基板２の寸法は、５インチ×５インチＸ０．０
９インチである。The dimensions of the transparent substrate 2 are 5 inches x 5 inches x 0.0
It is 9 inches.
前記遮光性薄膜３は、モリブデン珪化物のターゲット（
モリブデンと珪素との混合比は、３３原子％：６７原子
％である）を用いて、アルゴンガス雰囲気中（圧力３Ｘ
１０−’Ｔｏｒｒ）で反応性スパッタリング法により膜
厚約１０００オングストロームに形成したものである。The light-shielding thin film 3 is made of a molybdenum silicide target (
The mixing ratio of molybdenum and silicon is 33 atomic %: 67 atomic %) in an argon gas atmosphere (pressure 3X
The film was formed to a thickness of about 1000 angstroms by reactive sputtering at a temperature of 10-'Torr).
前記接着強化用薄膜４は、遮光性薄Ｗｉ３の形成後に、
同様のターゲットを用いたスパッタリング法によって、
アルボ２９５体積％と酸素５体積％の混合ガス雰囲気中
（圧力３Ｘ１０−’Ｔｏｒｒ）で形成したもので、膜厚
は３５０オングストロームであり、酸素と珪素とモリブ
デンとを含有している。After the formation of the light-shielding thin Wi 3, the adhesion-strengthening thin film 4 is
By sputtering method using similar target,
It was formed in a mixed gas atmosphere of 295% by volume of Albo and 5% by volume of oxygen (pressure: 3×10-'Torr), had a thickness of 350 angstroms, and contained oxygen, silicon, and molybdenum.
以上の如きフォトマスクブランク１において、波長４５
０ ｎｍに対する光学濃度は３．０である。In the photomask blank 1 as described above, the wavelength is 45
The optical density for 0 nm is 3.0.
次に、このフォトマスクブランク１からフォトマスクを
製造する工程を以下に説明する。Next, the process of manufacturing a photomask from this photomask blank 1 will be explained below.
Ｉ）
まず、前記接着強化用薄膜４の上にポジ型フォトレジス
ト（例えば、ヘキスト社製のＡＺ−１３５０等）を滴下
し、スピンコード法により膜厚５０００オングストロー
ムのレジスト膜を形成する。I) First, a positive photoresist (for example, AZ-1350 manufactured by Hoechst Co., Ltd.) is dropped onto the adhesion-strengthening thin film 4, and a resist film having a thickness of 5000 angstroms is formed by a spin code method.
■） 次いで、所定の線幅（例えば、２μｍ）のパター
ンを有するマスターマスクを通して紫外光により露光量
５５ｍＪ″′Ｃ″露光した後、現像液にで３８秒間現像
して、レジスト膜にレジストパターンを形成する。(2) Next, the resist pattern is formed on the resist film by exposing it to ultraviolet light at a dose of 55 mJ'''C'' through a master mask having a pattern with a predetermined line width (for example, 2 μm), and then developing it in a developer for 38 seconds. Form.
このレジストパターンは、光学顕微鏡にて観察したとこ
ろ、線幅の細りゃレジストパターンの消失等の不都合が
どこにも発生せず、マスターマスクに忠実なパターンを
確認することができた。これは、前記レジスト膜の密着
性が極めて良いためであると考えることができる。When this resist pattern was observed using an optical microscope, it was confirmed that there were no problems such as disappearance of the resist pattern due to narrow line width, and the pattern was faithful to the master mask. This can be considered to be because the adhesiveness of the resist film is extremely good.
■） 次いで、前述のレジストパターン付きフォトマス
クブランク１を平行平板プラズマエツチング装置内にて
、ＣＦ ４ガスと０２ガスとの混合ガス（両者の混合比
が、８０体積％：２０体積％）中に載置し、レジストパ
ターンをマスクとして、接着強化用薄１１ｆｆ４及び遮
光性薄ｖ４３を９０秒間ドライエツチングする。(2) Next, the photomask blank 1 with the resist pattern described above was placed in a mixed gas of CF4 gas and 02 gas (mixing ratio of the two is 80% by volume: 20% by volume) in a parallel plate plasma etching device. Then, using the resist pattern as a mask, the adhesion reinforcing thin film 11ff4 and the light shielding thin film V43 are dry-etched for 90 seconds.
Ｖｌ ） 次いで、レジストパターンを、熱濃硫酸等
で除去して、第２図に示すような遮光性パターン３Ａを
有するフォトマスク５を製作する。このマスク５のパタ
ーン形状を光学顕微鏡にて検査したところ、マスターマ
スクに忠実なマスクパターンを確認することができた。Vl) Next, the resist pattern is removed using hot concentrated sulfuric acid or the like to produce a photomask 5 having a light-shielding pattern 3A as shown in FIG. When the pattern shape of this mask 5 was inspected using an optical microscope, it was confirmed that the mask pattern was faithful to the master mask.
レジストパターンの除去には、熱濃硫酸等を利用する
ため、フォトマスクブランク１には耐酸性が必要である
。Since hot concentrated sulfuric acid or the like is used to remove the resist pattern, the photomask blank 1 must have acid resistance.
この実施例の場合、例えば、新規構成である接着強化用
薄膜４の耐酸性が弱く、そのためにレジストパターンの
除去処理に不都合が発生するようでは困る。In the case of this embodiment, for example, it would be a problem if the adhesion-strengthening thin film 4, which has a new structure, has weak acid resistance and this causes problems in the resist pattern removal process.
そこで、接着強化用薄ＪＩｉ４の耐酸性を調べる実験を
した。Therefore, an experiment was conducted to examine the acid resistance of the adhesive strengthening thin JIi4.
この実験は、フォトマスク５を濃度９６％の硫酸（温度
１２０°Ｃ）中に浸漬し、遮光性パターン３Ａの膜厚変
化を測定したものである。In this experiment, the photomask 5 was immersed in sulfuric acid with a concentration of 96% (temperature: 120° C.), and changes in the film thickness of the light-shielding pattern 3A were measured.
この結果、第３図の線ａに示すように、浸漬し始めて１
２０分経過しても膜厚は減少せず、接着強化用薄膜を積
層した遮光性パターン３Ａは良好な耐酸性を備えている
ことが確認できた。As a result, as shown by line a in Figure 3, 1
Even after 20 minutes, the film thickness did not decrease, and it was confirmed that the light-shielding pattern 3A in which the adhesion-strengthening thin film was laminated had good acid resistance.
以上の説明のように、この実施例に示したフォトマスク
ブランクにおいて、接着強化用薄膜４は、遮光性薄膜３
を形成する工程の延長として、従来の装置で容易に形成
することができる。As described above, in the photomask blank shown in this example, the adhesion-strengthening thin film 4 is different from the light-shielding thin film 3.
can be easily formed using conventional equipment as an extension of the process of forming the .
しかも、この実施例のフォトマスクブランク１からフォ
トマスクを形成する場合には、接着促進剤を塗布せずど
も遮光性薄膜３の上にフォトレジスト膜を良好に密着さ
せることができるため、接着促進剤の塗布工程に起因し
た歩留りの低下を効果的に防止し得、かつ工程管理を容
易にすることができる。Moreover, when a photomask is formed from the photomask blank 1 of this embodiment, the photoresist film can be adhered well to the light-shielding thin film 3 without applying an adhesion promoter, which promotes adhesion. It is possible to effectively prevent a decrease in yield due to the process of applying the agent, and to facilitate process control.
なお、この実施例では、前記接着強化用薄ＷＡ４が含有
する酸素量を、該薄膜４形成時の雰囲気中の酸素含有量
（実施例では、５体積％）によって設定したが、本発明
者等の実験によれば、雰囲気中の酸素含有量は、１体積
％乃至１０体積％の範囲に設定することが好ましい。す
なわち、酸素含有量が１体積％未溝の場合には、フォト
レジスト膜の密着性の効果が低減し、一方、１０体積％
以上の含有量の場合には、耐酸性が低下する傾向が見ら
れたからである。In this example, the amount of oxygen contained in the thin WA 4 for strengthening adhesion was set according to the oxygen content in the atmosphere at the time of forming the thin film 4 (5% by volume in the example), but the inventors of the present invention et al. According to experiments, the oxygen content in the atmosphere is preferably set in the range of 1% by volume to 10% by volume. That is, when the oxygen content is 1% by volume, the effect of the adhesion of the photoresist film is reduced;
This is because when the content was above, there was a tendency for acid resistance to decrease.
この薄膜形成時の雰囲気中の酸素含有量は、接着強化用
薄膜４自体の酸素含有量と密接に、しかも所定の関数関
係で対応することは勿論であり、雰囲気中の酸素含有量
が１体積％乃至１０体積％の場合に、実際に接着強化用
ｉｌＷ膜４膜体自体素含有量を測定すると、約５原子％
乃至６０原子％であった（測定は、オージェ分析による
もので、５体積％の雰囲気中で薄ｖ４を形成した場合に
は、実際の薄膜４中の含有量は４０原子％であった）。It goes without saying that the oxygen content in the atmosphere at the time of forming this thin film corresponds closely to the oxygen content of the adhesion-strengthening thin film 4 itself, and in a predetermined functional relationship. % to 10 volume %, when we actually measure the element content of the 4 adhesion strengthening ILW films, it is approximately 5 atomic %.
(The measurement was by Auger analysis, and when the thin film 4 was formed in a 5 volume % atmosphere, the actual content in the thin film 4 was 40 at %).
従って、本発明の作用・効果をより一層確実に得るため
には、接着強化用薄膜４自体の酸素含有量を約５原子％
乃至６０原子％の範囲に抑える事が好ましい。Therefore, in order to obtain the functions and effects of the present invention even more reliably, the oxygen content of the adhesion-strengthening thin film 4 itself must be reduced to about 5 atomic percent.
It is preferable to suppress the content to a range of 60 atomic %.
また、この実施例では、透明基板２の材質として石英ガ
ラスを示したが、これに限るものではなく、ソーダライ
ムガラス、アルミノシリケートガラス、アルミノボロシ
リケートガラス等であっても良い。Further, in this embodiment, quartz glass is shown as the material of the transparent substrate 2, but the material is not limited to this, and soda lime glass, aluminosilicate glass, aluminoborosilicate glass, etc. may also be used.
また、遮光性薄１ｉｉ３や接着強化用薄膜４に使う金属
珪化物の金属としては、実施例に示したモリブデン（Ｍ
Ｏ）の池、タンタル（Ｔａ）やタングステン（Ｗ）、あ
るいはニッケル（Ｎｉ）等の金属、さらにはこ五等の金
属の合金が考えられる。In addition, as the metal silicide used for the light-shielding thin film 1ii3 and the adhesion-strengthening thin film 4, molybdenum (M
Metals such as tantalum (Ta), tungsten (W), or nickel (Ni), and alloys of metals such as nickel (Ni) can be considered.
また、本発明は、前記実方拒例のレジストに限らず、池
のレジストに対しても適用できることは勿論である。Furthermore, it goes without saying that the present invention is applicable not only to the above-mentioned resists but also to resists that are difficult to resist.
［発明の効果］
以上の説明から明らかなように、本発明に係るフォトマ
スクブランクにおいて、接着強化用薄膜は、金属珪化物
からなる遮光性薄膜と組成が似ており、遮光性薄膜の場
合と同様の薄膜形成技術に因って形成し得るという点で
遮光性薄膜と同質であり、従来のフォトマスクブランク
の製造ラインを使って遮光性薄膜形成工程の延長として
、容易に形成することができる。換言すれば、接着強化
用薄膜を形成するなめに、新規に専用の装置を導入する
ような必要が無く、また繁雑な処理工程かけ加されるこ
ともない。[Effects of the Invention] As is clear from the above description, in the photomask blank according to the present invention, the adhesion-strengthening thin film has a composition similar to that of the light-shielding thin film made of metal silicide, and has a composition similar to that of the light-shielding thin film made of metal silicide. It is the same as a light-shielding thin film in that it can be formed using the same thin film formation technology, and can be easily formed as an extension of the light-shielding thin film formation process using a conventional photomask blank production line. . In other words, there is no need to introduce a new dedicated device to form a thin film for reinforcing adhesion, and there is no need to add complicated processing steps.
しかも、この接着強化用薄膜に対してはフォトレジスト
膜の密着性が良いため、フォトマスクを形成する際に接
着促進剤による処理工程が必要なく、直接、従来例の項
に記載したフォトリソグラフィー工程■〜■を実施する
だけで、精度の良いフォトマスクを製作することができ
る。Moreover, since the adhesion of the photoresist film to this adhesion-strengthening thin film is good, there is no need for a treatment process using an adhesion promoter when forming a photomask, and the process can be directly performed using the photolithography process described in the conventional example section. A highly accurate photomask can be manufactured by simply performing steps ① to ②.
したがって、本発明に係るフォトマスクブランクによれ
ば、フォトマスクの形成に際して従来の接着促進剤を塗
布する処理工程が不要で、該処理工程に起因していた製
品の歩留りの低下を効果的に防止し得るとともに、工程
管理を容易にすることができる。Therefore, according to the photomask blank according to the present invention, the conventional processing step of applying an adhesion promoter is not necessary when forming a photomask, and the decrease in product yield caused by the processing step can be effectively prevented. In addition, process control can be facilitated.
第１図は本発明に係るフォトマスクブランクの一実施例
の縦断面図、第２図は前記一実施例のフォトマスクブラ
ンクから形成したフォトマスクの縦断面図、第３図は前
記一実施例のフォトマスクブランクにおける接着強化用
薄膜の耐酸性を立証するグラフである。
１・・・フォトマスクブランク、２・・・透明基板、３
・・・遮光性薄膜、４・・・接着強化用薄膜、５・・・
フォトマスク。FIG. 1 is a longitudinal sectional view of an embodiment of a photomask blank according to the present invention, FIG. 2 is a longitudinal sectional view of a photomask formed from the photomask blank of the embodiment, and FIG. 3 is a longitudinal sectional view of a photomask blank of the embodiment. 3 is a graph proving the acid resistance of the adhesion-enhancing thin film in the photomask blank of FIG. 1... Photomask blank, 2... Transparent substrate, 3
...Light-shielding thin film, 4...Thin film for reinforcing adhesion, 5...
Photo mask.
Claims (1)
、この遮光性薄膜上に酸素を含有した金属珪化物からな
る接着強化用の薄膜を設けて該薄膜上にレジストを塗布
するようにして、前記遮光性膜に前記レジストが確実に
接着されるようにしたことを特徴とするフォトマスクブ
ランク。A light-shielding thin film made of a metal silicide is formed on a transparent substrate, an adhesion-strengthening thin film made of a metal silicide containing oxygen is provided on the light-shielding thin film, and a resist is applied on the thin film. . A photomask blank, characterized in that the resist is reliably bonded to the light-shielding film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30189787A JP2556534B2 (en) | 1987-11-30 | 1987-11-30 | Photo mask blank |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30189787A JP2556534B2 (en) | 1987-11-30 | 1987-11-30 | Photo mask blank |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01142637A true JPH01142637A (en) | 1989-06-05 |
| JP2556534B2 JP2556534B2 (en) | 1996-11-20 |
Family
ID=17902442
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30189787A Expired - Lifetime JP2556534B2 (en) | 1987-11-30 | 1987-11-30 | Photo mask blank |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2556534B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007271774A (en) * | 2006-03-30 | 2007-10-18 | Hoya Corp | Mask blank and photomask |
| US7691546B2 (en) | 2004-09-10 | 2010-04-06 | Shin-Etsu Chemical Co., Ltd. | Photomask blank and photomask |
| US7767367B2 (en) | 2006-03-10 | 2010-08-03 | Toppan Printing Co., Ltd. | Photomask blank and photomask making method |
| US7767366B2 (en) | 2006-03-10 | 2010-08-03 | Shin-Etsu Chemical Co., Ltd. | Photomask blank and photomask |
| US7790339B2 (en) | 2006-04-21 | 2010-09-07 | Shin-Etsu Chemical Co., Ltd. | Photomask blank |
| KR20170034327A (en) | 2015-09-18 | 2017-03-28 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Photomask blank, making method, and photomask |
-
1987
- 1987-11-30 JP JP30189787A patent/JP2556534B2/en not_active Expired - Lifetime
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|---|---|---|---|---|
| US8007964B2 (en) | 2004-09-10 | 2011-08-30 | Shin-Etsu Chemical Co., Ltd. | Photomask blank and photomask |
| EP2246737A1 (en) | 2004-09-10 | 2010-11-03 | Shin-Etsu Chemical Co., Ltd. | Photomask blank and photomask |
| US7691546B2 (en) | 2004-09-10 | 2010-04-06 | Shin-Etsu Chemical Co., Ltd. | Photomask blank and photomask |
| EP2302453A2 (en) | 2004-09-10 | 2011-03-30 | Shin-Etsu Chemical Co., Ltd. | Photomask blank and photomask |
| EP2302452A2 (en) | 2004-09-10 | 2011-03-30 | Shin-Etsu Chemical Co., Ltd. | Photomask blank and photomask |
| US7989124B2 (en) | 2006-03-10 | 2011-08-02 | Toppan Printing Co., Ltd. | Photomask blank and photomask making method |
| US8012654B2 (en) | 2006-03-10 | 2011-09-06 | Shin-Etsu Chemical Co., Ltd. | Photomask blank and photomask |
| EP2328025A1 (en) | 2006-03-10 | 2011-06-01 | Shin-Etsu Chemical Co., Ltd. | Photomask blank and photomask making method |
| EP2312392A2 (en) | 2006-03-10 | 2011-04-20 | Shin-Etsu Chemical Co., Ltd. | Photomask blank and photomask |
| EP2328022A1 (en) | 2006-03-10 | 2011-06-01 | Shin-Etsu Chemical Co., Ltd. | Photomask blank and photomask making method |
| US7767366B2 (en) | 2006-03-10 | 2010-08-03 | Shin-Etsu Chemical Co., Ltd. | Photomask blank and photomask |
| EP2328023A1 (en) | 2006-03-10 | 2011-06-01 | Shin-Etsu Chemical Co., Ltd. | Photomask blank and photomask making method |
| EP2328024A1 (en) | 2006-03-10 | 2011-06-01 | Shin-Etsu Chemical Co., Ltd. | Photomask blank and photomask making method |
| US7767367B2 (en) | 2006-03-10 | 2010-08-03 | Toppan Printing Co., Ltd. | Photomask blank and photomask making method |
| US8003284B2 (en) | 2006-03-10 | 2011-08-23 | Shin-Etsu Chemical Co., Ltd. | Photomask blank and photomask |
| JP2007271774A (en) * | 2006-03-30 | 2007-10-18 | Hoya Corp | Mask blank and photomask |
| US7790339B2 (en) | 2006-04-21 | 2010-09-07 | Shin-Etsu Chemical Co., Ltd. | Photomask blank |
| KR20170034327A (en) | 2015-09-18 | 2017-03-28 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Photomask blank, making method, and photomask |
| EP3165963A1 (en) | 2015-09-18 | 2017-05-10 | Shin-Etsu Chemical Co., Ltd. | Photomask blank, making method, and photomask |
| US9952501B2 (en) | 2015-09-18 | 2018-04-24 | Shin-Etsu Chemical Co., Ltd. | Photomask blank, making method, and photomask |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2556534B2 (en) | 1996-11-20 |
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