JPH01112554U - - Google Patents
Info
- Publication number
- JPH01112554U JPH01112554U JP801188U JP801188U JPH01112554U JP H01112554 U JPH01112554 U JP H01112554U JP 801188 U JP801188 U JP 801188U JP 801188 U JP801188 U JP 801188U JP H01112554 U JPH01112554 U JP H01112554U
- Authority
- JP
- Japan
- Prior art keywords
- ion
- implantation apparatus
- value
- ion implantation
- filter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005468 ion implantation Methods 0.000 claims description 5
- 230000001133 acceleration Effects 0.000 claims description 2
- 238000010884 ion-beam technique Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 4
Description
第１図は、実施例に係るイオン注入装置の加速
管回りを示す概略図である。第２図は、実施例に
係るイオン注入装置の電位分布を示す図である。
第３図は、従来のイオン注入装置の一例を示す概
略図である。第４図は、従来のイオン注入装置の
電位分布を示す図である。
２……イオン源、８……イオンビーム、１０…
…分析器、１８……加速管、２６……フイルタ電
極、３４ａ……フイルタ電源。
FIG. 1 is a schematic diagram showing the accelerator tube and surroundings of the ion implantation apparatus according to the embodiment. FIG. 2 is a diagram showing the potential distribution of the ion implantation device according to the example.
FIG. 3 is a schematic diagram showing an example of a conventional ion implantation apparatus. FIG. 4 is a diagram showing the potential distribution of a conventional ion implanter. 2...Ion source, 8...Ion beam, 10...
...Analyzer, 18...Acceleration tube, 26...Filter electrode, 34a...Filter power supply.
Claims (1)
によつて分析した後加速管によつて加速する構造
のものであつて、加速管の入口部内にフイルタ電
極を設けてこれにフイルタ電源からフイルタ電圧
を印加できるようにしたイオン注入装置において
、前記フイルタ電源からフイルタ電極に印加する
フイルタ電圧ＶＦを、イオン源でのイオンビーム
の引出し電圧をＶＥとした場合、 ０＜ＶＦ＜ＶＥ／２の値とＶＦ＞ＶＥ／２の値
とに切替え可能にしたことを特徴とするイオン注
入装置。[Claims for Utility Model Registration] The ion beam extracted from the ion source is analyzed by an analyzer and then accelerated by an acceleration tube. In an ion implantation apparatus in which a filter voltage can be applied from a filter power source at An ion implantation apparatus characterized in that it is possible to switch between a value of VE/2 and a value of VF>VE/2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP801188U JPH01112554U (en) | 1988-01-25 | 1988-01-25 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP801188U JPH01112554U (en) | 1988-01-25 | 1988-01-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01112554U true JPH01112554U (en) | 1989-07-28 |
Family
ID=31213510
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP801188U Pending JPH01112554U (en) | 1988-01-25 | 1988-01-25 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01112554U (en) |
-
1988
- 1988-01-25 JP JP801188U patent/JPH01112554U/ja active Pending
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