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JPH0993072A - Surface acoustic wave filter - Google Patents

Surface acoustic wave filter

Info

Publication number
JPH0993072A
JPH0993072A JP7247639A JP24763995A JPH0993072A JP H0993072 A JPH0993072 A JP H0993072A JP 7247639 A JP7247639 A JP 7247639A JP 24763995 A JP24763995 A JP 24763995A JP H0993072 A JPH0993072 A JP H0993072A
Authority
JP
Japan
Prior art keywords
electrode
saw
comb
ratio
electrode finger
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7247639A
Other languages
Japanese (ja)
Other versions
JP3442202B2 (en
Inventor
Sen Minemura
践 峰村
Kenji Nagata
憲治 永田
Yoshitaka Nakamura
義孝 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP24763995A priority Critical patent/JP3442202B2/en
Publication of JPH0993072A publication Critical patent/JPH0993072A/en
Application granted granted Critical
Publication of JP3442202B2 publication Critical patent/JP3442202B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a surface acoustic wave (SAW) filter with which frequency characteristics are improved and the rate of frequency shift change caused by dispersion in electrode finger width is reduced by forming the ratio of elec trode finger width at a specified level corresponding to the electrode finger pitch of comb-line electrode at a SAW resonator. SOLUTION: This SAW filter is formed by stepwisely connecting plural SAW resonators to serial SF1 and SF2 and parallel PF1-PF3. The respective SAW resonators are formed on a piezoelectric substrate as electrode patterns so that the respective electrode fingers of a pair of comb-line electrodes can be alternately inserted. Then, the electrode fingers of comb-line electrodes are formed in a certain pattern so that width W corresponding to its pitch P can be the ratio of 60% at least. Thus, the difference between a resonance frequency and an anti-resonance frequency can be relatively reduced.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、表面弾性波(SA
W:Surface Acoustic Wave )を利用する素子を用いた
共振器(SAW共振器)に係り、特に、かかるSAW共
振器を複数個、直並列に組み合わせて梯子状に接続して
成るフィルタ(ラダー形SAWフィルタ)の周波数特性
を改善する技術に関する。
TECHNICAL FIELD The present invention relates to a surface acoustic wave (SA).
The present invention relates to a resonator (SAW resonator) using an element utilizing W: Surface Acoustic Wave, and in particular, a filter (ladder type SAW) formed by combining a plurality of such SAW resonators in series and parallel and connecting them in a ladder shape. The present invention relates to a technique for improving frequency characteristics of a filter.

【0002】[0002]

【従来の技術】図9には典型的なSAW共振器の一構成
例が示される。図中、(a)はSAW共振器の構造を模
式的に示したもので、(b)はそれをシンボル表記で示
したものである。図9(a)において、10は圧電体基
板、20は圧電体基板10の上に形成されたSAW共振
子を示す。圧電体基板10は、例えばニオブ酸リチウム
(LiNbO3)やタンタル酸リチウム(LiTaO3)等
の単結晶、或いは、チタン酸ジルコン酸鉛(PZT)等
の圧電セラミックで形成されている。また、SAW共振
子20は、1対の励振用櫛形電極(IDT:Inter-Digi
tal Transducer)21及び22と、該IDTの両側に配
設した反射器23及び24とを備えて構成され、各ID
T21,22及び各反射器23,24は、例えばアルミ
ニウム(Al)をスパッタリングにより成長させパター
ニングすることにより形成される。この際、入力(I
N)側のIDT21及び出力(OUT)側のIDT22
は、各々の電極指F1 及びF2 が交互に差し挟まれるよ
うにパターン形成される。なお、PIDTは各IDT2
1,22の隣合う電極指間の間隔(ピッチ)を表し、P
REF は各反射器23,24の隣合う電極間の間隔(ピッ
チ)を表している。
2. Description of the Related Art FIG. 9 shows a structural example of a typical SAW resonator. In the figure, (a) schematically shows the structure of the SAW resonator, and (b) shows it in symbol notation. In FIG. 9A, 10 is a piezoelectric substrate, and 20 is a SAW resonator formed on the piezoelectric substrate 10. The piezoelectric substrate 10 is formed of a single crystal such as lithium niobate (LiNbO 3 ) or lithium tantalate (LiTaO 3 ), or a piezoelectric ceramic such as lead zirconate titanate (PZT). Further, the SAW resonator 20 is composed of a pair of excitation comb electrodes (IDT: Inter-Digi).
tal transducers) 21 and 22, and reflectors 23 and 24 arranged on both sides of the IDT, respectively.
The T21 and 22 and the reflectors 23 and 24 are formed by, for example, growing aluminum (Al) by sputtering and patterning it. At this time, input (I
IDT 21 on the N) side and IDT 22 on the output (OUT) side
Are patterned such that the respective electrode fingers F 1 and F 2 are alternately sandwiched. In addition, P IDT is each IDT 2
The distance (pitch) between adjacent electrode fingers of 1 and 22 is expressed as P
REF represents an interval (pitch) between adjacent electrodes of the reflectors 23 and 24.

【0003】このような構造を持つSAW共振器では、
励振用電極(IDT21,22)で発生した表面弾性波
(SAW)をその両側に配設した反射器23,24で反
射させることにより定在波を生じさせ、それによって高
いQを持った振動を励起するように機能する。この場
合、励振される周波数は、ピッチPIDT 及びPREF の大
きさに依存して決定される。
In a SAW resonator having such a structure,
The surface acoustic waves (SAW) generated by the excitation electrodes (IDTs 21, 22) are reflected by the reflectors 23, 24 arranged on both sides of the electrodes to generate a standing wave, thereby generating a vibration having a high Q. Functions to excite. In this case, the excited frequency is determined depending on the magnitudes of the pitches P IDT and P REF .

【0004】このようなSAW共振器を複数個、直並列
に適宜組み合わせて梯子状に接続することにより、例え
ば図1(a)に示すようなラダー形SAWフィルタが構
成される。かかるラダー形SAWフィルタにおいてその
フィルタ特性は、直列に接続されたSAW共振器が持つ
共振点による周波数特性と、並列に接続されたSAW共
振器が持つ共振点及び反共振点による周波数特性の合成
により決定される。
By appropriately combining a plurality of such SAW resonators in series and parallel and connecting them in a ladder shape, for example, a ladder type SAW filter as shown in FIG. 1A is constructed. In such a ladder type SAW filter, its filter characteristic is a combination of the frequency characteristic due to the resonance point of the SAW resonators connected in series and the frequency characteristic due to the resonance point and the antiresonance point of the SAW resonators connected in parallel. It is determined.

【0005】従来知られている技術では、図10に示す
ように、ラダー形SAWフィルタに用いられるSAW共
振器を構成している櫛形電極の電極指の幅(W0 )は、
電極指のピッチ(P)に対して50%(=W0 /P)の
比率でパターン形成されており、λ/4に固定されてい
た。なお、λは共振(又は反共振)周波数f0 での表面
弾性波の波長を示し、λ=V/f0 (但し、Vは表面弾
性波の伝播速度)によって表される。
In the conventionally known technique, as shown in FIG. 10, the width (W 0 ) of the electrode fingers of the comb-shaped electrodes forming the SAW resonator used in the ladder type SAW filter is
The pattern was formed at a ratio of 50% (= W 0 / P) with respect to the pitch (P) of the electrode fingers, and was fixed at λ / 4. It should be noted that λ represents the wavelength of the surface acoustic wave at the resonance (or anti-resonance) frequency f 0 and is represented by λ = V / f 0 (where V is the propagation velocity of the surface acoustic wave).

【0006】[0006]

【発明が解決しようとする課題】一般に、SAWフィル
タの周波数通過特性を向上させるためには、帯域外の信
号減衰量を大きくする必要がある。言い換えると、SA
Wフィルタの周波数通過特性は、その使用目的(つまり
帯域通過フィルタとして用いること)から、通過帯域と
帯域外の境界部において特性曲線が急峻に立ち上がり、
或いは立ち下がっていることが要求される。
Generally, in order to improve the frequency pass characteristics of the SAW filter, it is necessary to increase the amount of signal attenuation outside the band. In other words, SA
The frequency pass characteristic of the W filter has a sharp rise in the characteristic curve at the boundary between the pass band and the out-of-band from the purpose of use (that is, use as a band pass filter).
Or, it is required that you are standing down.

【0007】しかしながら、従来知られているSAWフ
ィルタでは、かかる要求に満足に応えることができるも
のは無かった。また、SAWフィルタを製造する際に、
そのプロセスのばらつきに起因して、SAW共振器を構
成している櫛形電極の電極指の幅もばらつく(つまり不
均一となる)。その結果、マクロ的に見た表面弾性波の
伝播速度(V)が変化し、共振周波数(f0 )がシフト
する。これは、製品を安定生産する上で弊害となり、歩
留りを低下させる要因となる。
However, none of the conventionally known SAW filters can satisfy such demands satisfactorily. Also, when manufacturing a SAW filter,
Due to the variation in the process, the width of the electrode fingers of the comb-shaped electrodes forming the SAW resonator also varies (that is, becomes nonuniform). As a result, the propagation velocity (V) of the surface acoustic wave in macroscopic view changes, and the resonance frequency (f 0 ) shifts. This is an obstacle to stable production of products and is a factor of reducing the yield.

【0008】本発明は、上述した従来技術における課題
に鑑み創作されたもので、周波数特性を改善すると共
に、製造プロセスに起因する電極指幅のばらつきに対す
る周波数シフト変化率を小さくし、ひいては歩留りの向
上に寄与することができる表面弾性波(SAW)フィル
タを提供することを目的とする。
The present invention has been made in view of the above-mentioned problems in the prior art. It improves frequency characteristics, reduces the frequency shift change rate due to variations in electrode finger width caused by the manufacturing process, and thus improves the yield. An object is to provide a surface acoustic wave (SAW) filter that can contribute to improvement.

【0009】[0009]

【課題を解決するための手段】上述した従来技術の課題
を解決するため、本発明によれば、複数のSAW共振器
を直並列に梯子状に接続して成るSAWフィルタにおい
て、前記複数のSAW共振器の各々が、圧電体基板の上
にそれぞれの電極指が交互に差し挟まれるように電極パ
ターンを形成して成る励振用の1対の櫛形電極と、該1
対の櫛形電極の両側にそれぞれ電極パターンを形成して
成る反射器とを有し、前記櫛形電極の電極指のピッチに
対する電極指の幅を少なくとも60%の比率でパターン
形成したことを特徴とするSAWフィルタが提供され
る。
In order to solve the above-mentioned problems of the prior art, according to the present invention, a SAW filter comprising a plurality of SAW resonators connected in series and in a ladder shape is used. Each of the resonators has a pair of excitation comb-shaped electrodes formed by forming an electrode pattern on a piezoelectric substrate such that the electrode fingers are alternately sandwiched between the comb-shaped electrodes.
Reflectors each having an electrode pattern formed on both sides of a pair of comb-shaped electrodes, and the electrode fingers are patterned at a ratio of at least 60% to the pitch of the electrode fingers of the comb-shaped electrodes. A SAW filter is provided.

【0010】櫛形電極の電極指のピッチに対する電極指
幅の比率を、従来の50%から更に大きく(本発明の好
適な実施形態では少なくとも60%に)すると、櫛形電
極の電気機械結合係数はより一層小さくなる。従って、
SAWフィルタの共振周波数と反共振周波数の差(Δf
とする)は小さくなる。これによって、通過帯域と帯域
外の境界部において特性曲線の立ち上がり及び立ち下が
りを急峻とすることができる。つまり、SAWフィルタ
の周波数通過特性を向上させることができる。
When the ratio of the electrode finger width to the electrode finger pitch of the comb-shaped electrode is increased from the conventional 50% (to at least 60% in the preferred embodiment of the present invention), the electromechanical coupling coefficient of the comb-shaped electrode becomes higher. It gets smaller. Therefore,
The difference between the resonance frequency and the anti-resonance frequency of the SAW filter (Δf
And) becomes smaller. This makes it possible to make the rising and falling of the characteristic curve steep at the boundary between the pass band and the outside of the band. That is, the frequency pass characteristic of the SAW filter can be improved.

【0011】また、電極指幅の比率を変化させると、マ
クロ的に見た表面弾性波の伝播速度は変化する。これ
は、共振周波数と反共振周波数を低くする方向に作用す
る(周波数シフト)。その一方で、電気機械結合係数も
変化し、上述したように、共振周波数と反共振周波数を
シフトさせる。これら両方の周波数シフト量を合成する
と、電極指幅の比率を大きくするほど、電極指幅の変化
量に対する周波数シフト変化率は小さくなる。
Further, when the ratio of the electrode finger width is changed, the propagation velocity of the surface acoustic wave in macro view changes. This acts in the direction of lowering the resonance frequency and the anti-resonance frequency (frequency shift). On the other hand, the electromechanical coupling coefficient also changes, shifting the resonance frequency and the anti-resonance frequency as described above. When both of these frequency shift amounts are combined, the frequency shift change rate with respect to the electrode finger width change amount becomes smaller as the ratio of the electrode finger width increases.

【0012】従って、電極指幅の比率を大きくすること
で、電極指幅の変動要因による周波数変動を抑えること
ができ、製品を安定生産することができる。これは歩留
りの向上に寄与するものである。さらに、電極指幅の比
率を変化させると、表面弾性波の伝播速度及び櫛形電極
の静電容量が変化すると共に、共振周波数と反共振周波
数の変化量に違いが現れる。従って、これらの変化をう
まく利用することで、SAWフィルタの特性を左右する
通過帯域幅、インピーダンス整合、中心周波数等のファ
クタを微妙に調整することが可能となる。
Therefore, by increasing the ratio of the electrode finger width, it is possible to suppress the frequency fluctuation due to the fluctuation factor of the electrode finger width, and it is possible to stably manufacture the product. This contributes to the improvement of yield. Furthermore, when the ratio of the electrode finger width is changed, the propagation velocity of the surface acoustic wave and the electrostatic capacitance of the comb-shaped electrode are changed, and a difference appears between the resonance frequency and the anti-resonance frequency. Therefore, by making good use of these changes, it becomes possible to finely adjust factors such as the pass band width, impedance matching, and center frequency that influence the characteristics of the SAW filter.

【0013】[0013]

【発明の実施の形態】図1には本発明の一実施形態に係
るSAWフィルタの構成が示される。図中、(a)はS
AWフィルタの回路構成を示し、(b)は(a)の回路
で用いられるSAW共振器を構成している櫛形電極の一
部のパターンを示す。図1(a)に示すように、本実施
形態に係るSAWフィルタは、基本的な構成として、入
出力(IN/OUT)に対して直列に接続した2個のS
AW共振器SF1及びSF2と、入出力(IN/OU
T)に対して並列に接続した3個のSAW共振器PF1
〜PF3とを梯子状に組み合わせて成る4段構成のラダ
ー形SAWフィルタの形態を有している。更に、これら
のSAW共振器SF1,SF2,PF1,PF2及びP
F3と直列に、それぞれインダクタL1,L2,L3,
L4及びL5が接続されている。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows the structure of a SAW filter according to an embodiment of the present invention. In the figure, (a) is S
The circuit structure of an AW filter is shown, and (b) shows a part of the pattern of the comb-shaped electrode which comprises the SAW resonator used in the circuit of (a). As shown in FIG. 1A, the SAW filter according to this embodiment has, as a basic configuration, two Ss connected in series with respect to input / output (IN / OUT).
AW resonators SF1 and SF2 and input / output (IN / OU
T) three SAW resonators PF1 connected in parallel
To PF3 are combined in a ladder shape to form a ladder SAW filter having a four-stage structure. Furthermore, these SAW resonators SF1, SF2, PF1, PF2 and P
Inductors L1, L2, L3, in series with F3, respectively.
L4 and L5 are connected.

【0014】なお、図示はしないが、各SAW共振器
は、図9(a)に示したように、圧電体基板の上にそれ
ぞれの電極指が交互に差し挟まれるように電極パターン
を形成して成る励振用の1対の櫛形電極と、該1対の櫛
形電極の両側にそれぞれ電極パターンを形成して成る反
射器とを有している。図1(b)において、Pは櫛形電
極の電極指のピッチ(1対の櫛形電極の隣合う電極指間
の間隔)、Wは電極指の幅を表している。
Although not shown, each SAW resonator is formed with an electrode pattern such that the electrode fingers are alternately sandwiched on the piezoelectric substrate, as shown in FIG. 9A. A pair of comb-shaped electrodes for excitation and a reflector formed by forming electrode patterns on both sides of the pair of comb-shaped electrodes. In FIG. 1B, P represents the pitch of the electrode fingers of the comb-shaped electrodes (the interval between the adjacent electrode fingers of the pair of comb-shaped electrodes), and W represents the width of the electrode fingers.

【0015】本実施形態において、SAW共振器の櫛形
電極の電極指の幅(W)は、電極指のピッチ(P)に対
して50%(従来形)よりも大きい比率(W/P>50
%)でパターン形成されている。この電極指幅の比率
(W/P)の選定については、例えば電極パターン形成
時の露光時間を適宜変更することにより、容易に対応が
可能である。
In the present embodiment, the width (W) of the electrode fingers of the comb-shaped electrode of the SAW resonator is larger than 50% (conventional type) with respect to the pitch (P) of the electrode fingers (W / P> 50).
%). The selection of the ratio (W / P) of the electrode finger width can be easily dealt with by appropriately changing the exposure time when forming the electrode pattern.

【0016】後述するように、本発明の好適な実施例で
は、この電極指幅の比率(W/P)は60%〜80%に
選定するのが好ましい。
As will be described later, in the preferred embodiment of the present invention, the electrode finger width ratio (W / P) is preferably selected to be 60% to 80%.

【0017】[0017]

【実施例】本発明者は、図1(a)及び(b)に示した
実施形態に係る4段構成のラダー形SAWフィルタで用
いられるSAW共振器に関して、櫛形電極の電極指幅を
変化させた場合の諸特性の変化を調べた。供試フィルタ
としては、中心周波数が約950MHzのSAWフィル
タを用いた。なお、図1(a)の構成において、各イン
ダクタL1〜L5のインダクタンスは1.5mHに設定
した。
EXAMPLE The present inventor changed the electrode finger width of a comb-shaped electrode with respect to the SAW resonator used in the ladder SAW filter having a four-stage structure according to the embodiment shown in FIGS. 1 (a) and 1 (b). The changes in various characteristics were investigated. A SAW filter having a center frequency of about 950 MHz was used as the sample filter. In addition, in the configuration of FIG. 1A, the inductance of each of the inductors L1 to L5 was set to 1.5 mH.

【0018】図2には電極指幅の変化に対するSAWフ
ィルタの周波数通過特性が示され、図3には電極指幅の
変化に対するSAWフィルタの反射特性が示される。こ
れらの特性グラフから以下のデータを取得した。図4に
は電極指幅の比率(W/P)の変化に対する共振周波数
と反共振周波数の差(Δf)の変化が示される。
FIG. 2 shows the frequency pass characteristics of the SAW filter with respect to changes in the electrode finger width, and FIG. 3 shows the reflection characteristics of the SAW filter with respect to changes in the electrode finger width. The following data was obtained from these characteristic graphs. FIG. 4 shows changes in the difference (Δf) between the resonance frequency and the anti-resonance frequency with respect to changes in the electrode finger width ratio (W / P).

【0019】図4からわかるように、電極指幅の比率が
増加するほどΔfの値は小さくなっている。ここにΔf
の変化量は、図2に示した周波数通過特性において通過
帯域と帯域外の境界部における曲線の立ち上がり及び立
ち下がりの変化が急峻であるかどうかの程度を表してお
り、Δfの値が小さいほど立ち上がり及び立ち下がりの
変化は急峻となる。
As can be seen from FIG. 4, the value of Δf becomes smaller as the ratio of the electrode finger width increases. Where Δf
2 represents the degree of steep change in the rising and falling edges of the curve at the boundary between the pass band and the out-of-band in the frequency pass characteristic shown in FIG. 2, and the smaller the value of Δf, the smaller the value of Δf. The rising and falling changes are sharp.

【0020】図5には電極指幅の比率(W/P)の変化
に対する共振点及び反共振点の周波数シフトの変化が示
される。また、図6には電極指幅の比率(W/P)の変
化に対する通過帯域幅の変化が示される。図5からわか
るように、電極指幅の比率(W/P)が増加するほど周
波数シフトの変化率は小さくなっている。また、共振点
の変化率は反共振点の変化率よりも小さいことがわか
る。従って、通過帯域幅も小さくなる(図6参照)。
FIG. 5 shows changes in the frequency shifts at the resonance point and the anti-resonance point with respect to changes in the electrode finger width ratio (W / P). Further, FIG. 6 shows changes in the pass band width with respect to changes in the electrode finger width ratio (W / P). As can be seen from FIG. 5, the rate of change in frequency shift decreases as the electrode finger width ratio (W / P) increases. Further, it can be seen that the rate of change at the resonance point is smaller than the rate of change at the anti-resonance point. Therefore, the pass band width is also reduced (see FIG. 6).

【0021】図6からわかるように、電極指幅の比率
(W/P)が60%以下の場合には、通過帯域幅が大き
くなりすぎて好ましくないため、電極指幅の比率(W/
P)は少なくとも60%とするのが好ましい。しかしな
がら、電極指幅(W)をむやみに大きくすると、SAW
フィルタの耐電力性を劣化させることになり、ひいては
SAWフィルタの寿命を短くすることにもなるため、適
当な比率にとどめるのが望ましい。
As can be seen from FIG. 6, when the electrode finger width ratio (W / P) is 60% or less, the pass band width becomes too large, which is not preferable.
P) is preferably at least 60%. However, if the electrode finger width (W) is excessively increased, SAW
Since the power withstand of the filter is deteriorated and the life of the SAW filter is shortened, it is desirable to keep the ratio to an appropriate level.

【0022】図7には電極指幅(W)の変化に対するS
AWフィルタの寿命の変化が示される。図示の例では、
電極指幅(W)に対する寿命(T)の変化を対数表示で
示している。今回の試験環境(1Wの入力で、チップ温
度が85°C)においては、8時間以上寿命が有れば製
品の使用上問題はないので、電極指幅の比率(W/P)
が80%以下であれば問題はない。
FIG. 7 shows S with respect to changes in the electrode finger width (W).
The change in the life of the AW filter is shown. In the example shown,
The change in the life (T) with respect to the electrode finger width (W) is shown in logarithmic display. In the current test environment (1 W input, chip temperature 85 ° C), there is no problem in using the product if it has a life of 8 hours or more, so electrode finger width ratio (W / P)
Is 80% or less, there is no problem.

【0023】また、図8には電極指幅の比率(W/P)
の変化に対する歩留りの変化が示される。ただし、図示
の関係は、電極指幅のばらつき(標準偏差)のデータと
電極指幅の変化率に対する周波数シフト量(図5参照)
を基に算出した。電極指幅の比率(W/P)が75%ま
では周波数シフト変化率が小さくなるため(図5参
照)、歩留りが向上するが(図8参照)、それ以上では
電極指幅のばらつきが大きくなるため、歩留りは低下す
る傾向にある。
Further, in FIG. 8, the ratio of electrode finger width (W / P)
The change in yield is shown with respect to the change. However, the illustrated relationship is that the data of the variation (standard deviation) of the electrode finger width and the frequency shift amount with respect to the change rate of the electrode finger width (see FIG. 5).
It was calculated based on Since the frequency shift change rate becomes small up to the electrode finger width ratio (W / P) of 75% (see FIG. 5), the yield is improved (see FIG. 8), but above that, the variation in electrode finger width is large. Therefore, the yield tends to decrease.

【0024】なお、ピッチP(本実施例では、P=2.
5μmとした)に対する電極指幅Wの比率(W/P)を
80%以上にすると、絶縁部の幅(P−W)は0.5μ
m以下となるため、技術の現状では、圧電体基板の上に
SAW共振器の電極パターンを形成するのは困難であ
る。つまり、SAWフィルタの製造が困難となる。従っ
て、電極指幅の比率(W/P)は80%以下とするのが
好ましい。
The pitch P (in this embodiment, P = 2.
If the ratio (W / P) of the electrode finger width W to 5 μm) is set to 80% or more, the width (P−W) of the insulating portion is 0.5 μm.
Since it is less than m, it is difficult to form the electrode pattern of the SAW resonator on the piezoelectric substrate under the current technology. That is, it becomes difficult to manufacture the SAW filter. Therefore, the electrode finger width ratio (W / P) is preferably 80% or less.

【0025】以上のことから、櫛形電極の電極指のピッ
チに対する幅の比率(W/P)は、60%〜80%の範
囲とするのが好ましい。以上説明したように、本実施例
に係るSAWフィルタの構成によれば、電極指幅の比率
(W/P)を従来の50%よりも大きく(60%〜80
%)しているので、図4からわかるように、共振周波数
と反共振周波数の差(Δf)を相対的に小さくすること
ができ、これによって、通過帯域と帯域外の境界部にお
ける曲線の立ち上がり及び立ち下がりの変化を急峻とす
ることができる。これは、周波数特性の改善に寄与する
ものである。
From the above, the ratio (W / P) of the width of the comb electrodes to the pitch of the electrode fingers is preferably in the range of 60% to 80%. As described above, according to the configuration of the SAW filter according to the present embodiment, the electrode finger width ratio (W / P) is larger than the conventional 50% (60% to 80%).
%), The difference (Δf) between the resonance frequency and the anti-resonance frequency can be made relatively small, and as a result, the rise of the curve at the boundary between the pass band and the out-of-band can be achieved. And, the change of the falling edge can be made steep. This contributes to the improvement of frequency characteristics.

【0026】また、図5からわかるように、電極指幅の
比率(W/P)を大きくすることで周波数シフトの変化
率を抑制することができるので、製品を安定生産するこ
とが可能となる。これは、歩留りの向上に寄与するもの
である。さらに、電極指幅の比率(W/P)を好ましい
範囲(60%〜80%)で適宜変化させることにより、
SAWフィルタの特性を決定する通過帯域幅、中心周波
数等のファクタをきめ細やかに調整することが可能とな
る。
Further, as can be seen from FIG. 5, the rate of change in frequency shift can be suppressed by increasing the ratio (W / P) of the electrode finger widths, so that stable production of products becomes possible. . This contributes to the improvement of yield. Furthermore, by appropriately changing the ratio (W / P) of the electrode finger width within a preferable range (60% to 80%),
It is possible to finely adjust the factors such as the pass band width and the center frequency that determine the characteristics of the SAW filter.

【0027】[0027]

【発明の効果】以上説明したように本発明によれば、S
AWフィルタにおいてSAW共振器を構成している櫛形
電極の電極指のピッチに対する電極指幅の比率を、従来
の50%よりも大きい特定の比率にすることで、周波数
特性を改善することができると共に、製造プロセスに起
因する電極指幅のばらつきに対する周波数シフト変化率
を小さくすることができ、歩留りの向上を図ることが可
能となる。
As described above, according to the present invention, S
In the AW filter, the frequency characteristic can be improved by setting the ratio of the electrode finger width to the pitch of the electrode fingers of the comb-shaped electrodes forming the SAW resonator to a specific ratio larger than the conventional 50%. The rate of change in frequency shift with respect to the variation in the electrode finger width caused by the manufacturing process can be reduced, and the yield can be improved.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施形態に係るSAWフィルタの構
成を示す図で、(a)はSAWフィルタの回路構成図、
(b)はSAW共振器を構成している櫛形電極の一部の
パターン図である。
FIG. 1 is a diagram showing a configuration of a SAW filter according to an embodiment of the present invention, in which (a) is a circuit configuration diagram of the SAW filter;
(B) is a pattern diagram of a part of the comb-shaped electrode that constitutes the SAW resonator.

【図2】電極指幅の比率の変化に対するSAWフィルタ
の周波数通過特性を示す図である。
FIG. 2 is a diagram showing a frequency pass characteristic of a SAW filter with respect to a change in a ratio of electrode finger widths.

【図3】電極指幅の比率の変化に対するSAWフィルタ
の反射特性を示す図である。
FIG. 3 is a diagram showing a reflection characteristic of a SAW filter with respect to a change in a ratio of electrode finger widths.

【図4】電極指幅の比率の変化に対する共振周波数と反
共振周波数の差の変化を示す図である。
FIG. 4 is a diagram showing changes in the difference between the resonance frequency and the anti-resonance frequency with respect to changes in the ratio of the electrode finger width.

【図5】電極指幅の比率の変化に対する共振点及び反共
振点の周波数シフトの変化を示す図である。
FIG. 5 is a diagram showing changes in frequency shift at a resonance point and an anti-resonance point with respect to a change in electrode finger width ratio.

【図6】電極指幅の比率の変化に対する通過帯域幅の変
化を示す図である。
FIG. 6 is a diagram showing a change in pass band width with respect to a change in electrode finger width ratio.

【図7】電極指幅の変化に対するSAWフィルタの寿命
の変化を示す図である。
FIG. 7 is a diagram showing changes in the life of the SAW filter with respect to changes in the electrode finger width.

【図8】電極指幅の比率の変化に対する歩留りの変化を
示す図である。
FIG. 8 is a diagram showing a change in yield with respect to a change in a ratio of electrode finger widths.

【図9】典型的なSAW共振器の一構成例を示す図で、
(a)はSAW共振器の構成を模式的に示した斜視図、
(b)はそれをシンボル表記で示した図である。
FIG. 9 is a diagram showing a configuration example of a typical SAW resonator,
(A) is a perspective view schematically showing the structure of a SAW resonator,
(B) is the figure which showed it in the symbol notation.

【図10】従来形のSAW共振器を構成している櫛形電
極の一部のパターン図である。
FIG. 10 is a pattern diagram of a part of a comb-shaped electrode forming a conventional SAW resonator.

【符号の説明】[Explanation of symbols]

PF1〜PF3…並列に接続したSAW共振器 SF1,SF2…直列に接続したSAW共振器 L1〜L5…インダクタ P…櫛形電極の電極指のピッチ W…電極指の幅 PF1 to PF3 ... SAW resonators connected in parallel SF1, SF2 ... SAW resonators connected in series L1 to L5 ... Inductor P ... Pitch of electrode fingers of comb-shaped electrodes W ... Width of electrode fingers

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 複数の表面弾性波共振器を直並列に梯子
状に接続して成る表面弾性波フィルタにおいて、 前記複数の表面弾性波共振器の各々が、圧電体基板の上
にそれぞれの電極指が交互に差し挟まれるように電極パ
ターンを形成して成る励振用の1対の櫛形電極と、該1
対の櫛形電極の両側にそれぞれ電極パターンを形成して
成る反射器とを有し、 前記櫛形電極の電極指のピッチ(P)に対する電極指の
幅(W)を少なくとも60%の比率でパターン形成した
ことを特徴とする表面弾性波フィルタ。
1. A surface acoustic wave filter comprising a plurality of surface acoustic wave resonators connected in series in parallel in a ladder shape, wherein each of the plurality of surface acoustic wave resonators has a respective electrode on a piezoelectric substrate. A pair of excitation comb-shaped electrodes formed by forming electrode patterns so that fingers are alternately sandwiched;
And a reflector formed by forming electrode patterns on both sides of a pair of comb-shaped electrodes, and patterning the electrode finger width (W) with respect to the electrode finger pitch (P) of the comb-shaped electrodes at a ratio of at least 60%. A surface acoustic wave filter characterized in that
【請求項2】 前記櫛形電極の電極指のピッチ(P)に
対する電極指の幅(W)を60%〜80%の比率でパタ
ーン形成したことを特徴とする請求項1に記載の表面弾
性波フィルタ。
2. The surface acoustic wave according to claim 1, wherein the width (W) of the electrode fingers with respect to the pitch (P) of the electrode fingers of the comb-shaped electrode is patterned at a ratio of 60% to 80%. filter.
JP24763995A 1995-09-26 1995-09-26 Surface acoustic wave filter Expired - Lifetime JP3442202B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24763995A JP3442202B2 (en) 1995-09-26 1995-09-26 Surface acoustic wave filter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24763995A JP3442202B2 (en) 1995-09-26 1995-09-26 Surface acoustic wave filter

Publications (2)

Publication Number Publication Date
JPH0993072A true JPH0993072A (en) 1997-04-04
JP3442202B2 JP3442202B2 (en) 2003-09-02

Family

ID=17166496

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP3442202B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6037700A (en) * 1997-03-31 2000-03-14 Sanyo Electric Co., Ltd. Surface acoustic wave device
JP2001510950A (en) * 1997-07-17 2001-08-07 エプコス アクチエンゲゼルシャフト Surface acoustic wave filter with improved edge steep characteristics
US6717487B2 (en) * 2001-01-12 2004-04-06 Murata Manufacturing Co., Ltd. Surface acoustic wave filter, and communication apparatus using the same
US6903626B2 (en) 2001-12-14 2005-06-07 Fujitsu Media Devices Limited Surface acoustic wave element and duplexer having the same
US7456705B2 (en) * 2005-02-24 2008-11-25 Kyocera Corporation Surface acoustic wave device, duplexer, and communications equipment

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JPH06164286A (en) * 1992-03-03 1994-06-10 Kokusai Electric Co Ltd Manufacture of surface acoustic wave resonator
JPH06232682A (en) * 1993-02-08 1994-08-19 Hitachi Ltd Surface acoustic wave resonator and surface acoustic wave filter
JPH07202631A (en) * 1993-11-25 1995-08-04 Fujitsu Ltd Surface acoustic weave device and manufacture f the same
JPH07221578A (en) * 1994-01-31 1995-08-18 Fujitsu Ltd Surface acoustic wave element and its manufacture
JPH07283682A (en) * 1994-04-13 1995-10-27 Murata Mfg Co Ltd Surface acoustic wave resonator filter

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JPS5711520A (en) * 1980-06-25 1982-01-21 Toshiba Corp Elastic surface wave resonator
JPS62128605A (en) * 1985-11-29 1987-06-10 Alps Electric Co Ltd Surface acoustic wave element and its production
JPH02295305A (en) * 1989-05-10 1990-12-06 Nec Corp Surface acoustic wave device
JPH03182111A (en) * 1989-12-11 1991-08-08 Seiko Epson Corp Surface acoustic wave device
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JPH07202631A (en) * 1993-11-25 1995-08-04 Fujitsu Ltd Surface acoustic weave device and manufacture f the same
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6037700A (en) * 1997-03-31 2000-03-14 Sanyo Electric Co., Ltd. Surface acoustic wave device
JP2001510950A (en) * 1997-07-17 2001-08-07 エプコス アクチエンゲゼルシャフト Surface acoustic wave filter with improved edge steep characteristics
US6351197B1 (en) * 1997-07-17 2002-02-26 Epcos Ag Surface acoustic wave filter having an improved edge steepness via series resonators with different finger periodicities
US6717487B2 (en) * 2001-01-12 2004-04-06 Murata Manufacturing Co., Ltd. Surface acoustic wave filter, and communication apparatus using the same
US6903626B2 (en) 2001-12-14 2005-06-07 Fujitsu Media Devices Limited Surface acoustic wave element and duplexer having the same
US7456705B2 (en) * 2005-02-24 2008-11-25 Kyocera Corporation Surface acoustic wave device, duplexer, and communications equipment

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