JPH0982630A - Variable-shape electron beam exposure system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To realize an oblique pattern making an arbitrary angle with high precision and throughput by a method wherein the third aperture forming a slit around an optical axis by driving a high-precision motor is driven so as to form an arbitrary parallelogram. SOLUTION: The third aperture 3 forming a rotative slit 3a around an optical axis by driving a high precision motor is arranged below rectangular apertures 1, 2 to form two each of beams. Next, an oblique parallelogram making an arbitrary angle is formed in terms of the relative positions, the deflecting amount passing through the rectangular hole 1a formed in the first aperture 1 and the other rectangular hole 2a by rotating the third aperture 3 around the optical axis. Through these procedures, an oblique pattern making an arbitrary angle with high precision and throughput can be realized.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron beam drawing apparatus for projecting a parallelogram beam on a wafer, and more specifically, for oblique line drawing with a parallelogram beam having an arbitrary angle, high precision and high throughput. The present invention relates to a variable shaped electron beam drawing apparatus that can be performed.

[0002]

2. Description of the Related Art Conventionally, an apparatus for projecting a beam on a wafer to draw a pattern, a so-called electron beam drawing apparatus,
It is known. When drawing such a pattern, there is no particular problem with respect to the method of drawing a straight line, but regarding drawing of an oblique pattern having an arbitrary angle, it is possible to obtain a smooth and accurate pattern having a desired width. There is a problem that it is difficult.

The conventional oblique pattern drawing methods can be roughly classified into the first generation to the third generation.
Here, a conventional method of drawing an oblique pattern, that is, a method of drawing an oblique pattern by an electron beam drawing apparatus will be described in detail with reference to the drawings.

FIG. 5 is a diagram for explaining the transition of the development of the electron beam drawing method.

FIG. 5 shows states from the 1970s to the 90s, and the memory levels (memory capacities) of the respective years are also shown. The system generation is divided into the first generation to the third generation, and the drawing method of each generation is shown.

First, the first generation is a method of drawing a spot beam by a vector scan or raster scan method. Although this drawing method has the advantage of high drawing accuracy, it is not suitable for mass production because it has a large number of shots and low throughput.

The next second generation is a method of drawing with a variable rectangular beam having a maximum area of several μm square. According to this drawing method, the number of shots can be reduced and throughput can be improved as compared with the previous spot beam.
There is an advantage. But in the case of diagonal patterns,
Since it is drawn as a collection of many small rectangles, there is a disadvantage that the drawing accuracy is reduced. For example, a trapezoidal pattern drawing method using a variable shaping mask drawing device JBX-7000MV manufactured by JEOL Ltd. is shown in FIG.

FIG. 6 is a diagram for explaining a method of drawing a trapezoidal pattern by a variable shaped mask drawing device. (1) shows a beam size of 0.5 μm and a pitch of 0.05 μm.
(2) has a beam size of 0.5 μm and a pitch of 0.25
The case of μm is shown.

In the case of the trapezoidal data having the oblique patterns shown in FIGS. 6 (1) and 6 (2), the position of the rectangular beam is changed in accordance with the size of the trapezoidal pattern while changing the size and height of the rectangular beam. Gradually shift and draw so that the beams overlap. If this drawing method is adopted, it is possible in principle to draw an arbitrary oblique pattern, but the edge roughness due to the rectangle approximation becomes a problem.

If the number of overlaps is increased in order to avoid such a problem, another problem arises such as a decrease in throughput due to an increase in shots and a difficulty in dose control. Also known is a device capable of drawing only a 45 ° pattern. For example, the variable-shape mask drawing device EX-8 [3] manufactured by Toshiba Corporation can form a 45 ° triangular beam. The above is the outline of the second-generation electron beam drawing apparatus.

The third generation is a cell projection method in which a plurality of cell apertures are arranged on the second mask of the shaping aperture to perform drawing. In this drawing method, if a transfer mask corresponding to the design pattern is prepared in advance, it is possible to draw a trapezoidal pattern including an arbitrary angle. However, there are problems that the practicable pattern is limited to the repeating pattern, that a high-precision transfer mask needs to be produced, and the like.

FIG. 7 is a conceptual diagram for explaining the variable shaped beam drawing system. In the reference numerals in the drawing, 21 is the first
A mask and 22 are second masks.

As shown in FIG. 7, in the variable shaped beam drawing system, a part of the beam is blocked by the first mask 21 and the second mask 22 and only the remaining part is transmitted to reduce the size. The beam is projected onto the wafer. By controlling the irradiation position of this reduced beam, it is possible to draw a pattern with an arbitrary small beam.

FIG. 8 is a conceptual diagram for explaining the cell projection method, in which (1) is an arrangement state of masks and (2) is a front view of a second mask and one mask pattern. The reference numerals in the figure are the same as those in FIG. 7, and 23 is the second mask 2
2 shows one mask pattern on 2.

The cell projection method shown in FIG. 8 (1) also has a common point that a part of the beam is blocked by the first mask 21 and the second mask 22 as in the variable shaped beam drawing method. However, in the case of the cell projection method, as shown in FIG. 8 (2), patterns having various shapes are formed on the second mask 22,
It is possible to draw a collective figure by selecting a desired pattern. For example, as shown in an enlarged view below FIG. 8 (2), if a mask pattern provided on the second mask 22, for example, one mask pattern 23 is selected, a plurality of reduced beams are simultaneously irradiated on the wafer. Therefore, the work efficiency is improved as compared with the variable shaped beam drawing method shown in FIG. The above is the outline of the development of the conventional oblique pattern drawing method.

An electron beam exposure method for drawing an oblique pattern is also known (for example, Japanese Patent Laid-Open No. 61-61).
No. 255502). In this electron beam exposure method,
Using a slit (aperture) having a slit shape exclusively for diagonal lines, an electron beam is shaped in the same method as a rectangle of horizontal and vertical components, and a shaded figure is drawn.

[0017]

In the conventional method of drawing a diagonal pattern, instead of rotating two rectangular shaping apertures, two diagonal aperture-shaped apertures having a slit shape are rotated to set an arbitrary angle. The hatched line is drawn (Japanese Patent Laid-Open No. 61-255022). However, this conventional drawing method has a problem that the degree of freedom in device pattern design is restricted because it is necessary to rotate two apertures each having a slit shape dedicated to diagonal lines.

More specifically, when each aperture having a slit shape dedicated to diagonal lines is rotated, both sides of the diagonal line are not necessarily parallel to each other, and it is difficult to draw a smooth diagonal line. That is, in the variable shaped electron beam drawing apparatus, in order to increase the degree of freedom in device pattern design, it is required to draw an oblique pattern having an arbitrary angle. Further, there is a demand for an electron beam drawing method capable of drawing an oblique pattern having an arbitrary angle with high accuracy and high throughput and without using a transfer mask as shown in FIG. 8 (2). The present invention realizes a variable shaping electron beam drawing apparatus that meets these requirements.

[0019]

According to the invention of claim 1, 2
In a variable shaping electron beam writing apparatus having a rectangular aperture for beam shaping, a third slit in which a slit rotatable around an optical axis by a high precision motor drive is formed under the rectangular aperture for beam shaping. An aperture is provided, and an arbitrary parallelogram beam is formed by rotating the third aperture.

According to a second aspect of the present invention, in the variable shaping electron beam drawing apparatus according to the first aspect, the beam passing through the two beam forming rectangular apertures and the third aperture is a beam deflection amount by a deflector, a slit. It is formed by controlling the rotation angle and the lens reduction ratio, and is similar to or equal to the diagonal figure in the design pattern.

According to a third aspect of the present invention, in the variable shaping electron beam drawing apparatus according to the first aspect, the cell projection is performed at a high precision drawing of an oblique line having an arbitrary angle drawn by rotating the third aperture. The transfer mask corresponding to the design pattern such as the method is unnecessary.

[0022]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of a variable shaped electron beam drawing apparatus of the present invention will be described in detail with reference to the drawings. The embodiments described here mainly correspond to the invention of claim 1, but are also related to the inventions of claim 2 and claim 3.

Also in this invention, basically, an existing electron beam drawing apparatus having two rectangular shaping apertures is used, and
A parallelogram beam having an arbitrary angle is formed by passing through a third aperture having a slit, which is arranged as a third aperture, for a reduced beam which is rectangularly shaped by passing through a single aperture. I am trying. First, the overall configuration of the variable shaped electron beam drawing apparatus of the present invention will be described with reference to the drawings.

FIG. 1 is a view conceptually showing a parallelogram beam forming state of the variable shaping electron beam drawing apparatus of the present invention. In the figure, 1 is a first aperture, 1a is a rectangular hole, 2 is a second aperture, 2a is a rectangular hole, 3 is a third aperture, 3a is a slit, 4 is a gear, 5 is a motor, and 6 is a design pattern. , Arrow R indicates the direction of rotation.

The variable-shaped electron beam drawing apparatus shown in FIG. 1 is also provided with two rectangular shaping apertures, that is, the first aperture 1 and the second aperture 2 in that the existing electron beam drawing apparatus (for example, Hitachi Ltd.) is used. HL-800D). However, below these beam shaping apertures (first aperture 1 and second aperture 2), slits 3a are formed.
Is added, and the third aperture 3 is characterized by being driven to rotate by the motor 5. Next, a method of drawing a design pattern having diagonal lines will be described.

FIG. 2 is a diagram showing an example of a parallelogram design pattern for the variable shaping electron beam drawing apparatus of the present invention. In the reference numerals in the figure, a indicates a long side, b indicates a short side, and α indicates an angle.

As shown in FIG. 2, the long side a, the short side b,
For parallelogram beamforming to draw a design pattern with diagonal lines containing parallelograms with angle α,
A specific method will be described.

FIG. 3 shows the variable shape electron beam drawing apparatus shown in FIG. 1 in which a first aperture 1 and a second aperture 2 are provided.
It is a figure explaining the shape of the parallelogram beam formed by the 3rd aperture 3 which has and slit 3a. The reference numerals in the figure are the same as those in FIG. 1, X and Y are coordinate axes, W is an aperture size, D is a beam deflection amount, SL is a rotary slit width (width of the slit 3a), and ABCD is a parallelogram to be formed. The top of the beam is shown.

According to the variable shaping electron beam drawing apparatus shown in FIG. 1, the rectangular hole 1a formed in the first aperture 1 is formed.
And the parallelogram beam that has passed through the rectangular hole 2a formed in the second aperture 2 is partially cut by the slit 3a formed in the third aperture 3, and the parallelogram shown in FIG. A beam ABCD is formed. The slit 3a formed in the third aperture 3 has a rotating slit width SL (= 1 μm), and the third aperture 3 is rotated around the optical axis by the motor 5 in FIG. It is possible to form an oblique beam having an angle (parallelogram beam ABCD).

That is, the angle α shown in FIG. 2 above is arbitrarily selected by the rotation of the third aperture 3. Further, the sides AD and BC (3a in FIG. 3) of the parallelogram beam ABCD are the relative positions of the first aperture 1 and the second aperture 2 having the aperture size W, as in the conventional case,
It is determined by the beam deflection amount D.

In the variable shaping electron beam drawing apparatus of the present invention,
Thus, the slit 3a having the rotary slit width SL
The third aperture 3 formed with the first aperture 1
And a second aperture 2 and a wafer, and a slit 3a having a width SL (about 1 μm) that can be rotated around the optical axis by driving a high-precision motor (motor 5) is provided. A parallelogram beam having an arbitrary angle is formed by controlling the beam corresponding to the design pattern.
Therefore, it is possible to realize a variable-shaped electron beam drawing apparatus of an electron beam drawing system that draws oblique line drawing having an arbitrary angle α with high accuracy and high throughput. Next, the system configuration of the variable shaping electron beam drawing apparatus of the present invention will be described with reference to the drawings.

FIG. 4 is a functional block diagram showing the system configuration of the variable shaping electron beam drawing apparatus shown in FIG. The reference numerals in the drawing are the same as those in FIG. 1, 11 is an electron gun, 12 is a blanker, 13 is a reduction lens, 14 is a drawing stage, 15 is CAD pattern data, 16 is a beam deflection amount D determination unit, and 17 is a slit. Rotation angle α determination unit, 1
Reference numeral 8 denotes a lens reduction ratio M determination unit, and 19 denotes a stage movement amount S determination unit.

As shown in FIG. 4, a deflection voltage or a deflection magnetic field is applied to the electron beam emitted from the electron gun 11 by the blanker 12 to give a beam deflection amount D. Thus, the purpose of providing the beam deflection amount D is to control the shape of the parallelogram in the X direction in FIG.

The electron beam deflected by the blanker 12 passes through the first aperture 1 and the second aperture 2 to form a rectangular beam. The beam subjected to this deflection is passed through the slit 3a which has been rotated by the angle α in advance by the motor 5 in accordance with the design pattern to form the parallelogram beam ABCD.

At this time, the parallelogram ABCD may be formed so as to be similar or equal to the design pattern (FIG. 2 above). In this case, the conditions are parallelogram AB
It is set as follows from the ratio of the sides AD and AB of the CD, the aperture size W, the beam deflection amount D, the rotary slit width SL, and the like.

AD / AB = a / b (1) Here, AD = (WD) / cosα (2) AB = SL / cosα (3) Since the above equation (3) From 1), (2), and (3),
(4) is established. (WD) / SL = a / b (4) Therefore, the following expression (5) is established. D = W- (a / b) SL ...... (5)

The parallelogram beam formed through the above process is reduced by the reduction lens 13 and projected onto the wafer placed on the drawing stage 14. Here, assuming that the line width on the wafer is L (μm), the reduction ratio by the reduction lens 13 (electron optical system reduction ratio M) is controlled so as to satisfy the following expression (6). SL / M = L (6) That is, M = SL / L (7)

To summarize the above, when writing a parallelogram beam projected on a wafer, by controlling the writing stage 14 at a position previously recognized from CAD (Computer Aided Design) pattern data, all chips can be controlled. It is sufficient to complete the drawing of. In this case, the values of the aperture size W, the diagonal line width L, and the diagonal line aspect ratio a / b are prerequisite values determined by the apparatus, and the beam deflection amount D, the rotary slit width SL, the electron optical system reduction ratio M. Should be quantified. Specific numerical examples will be described in detail in the following examples.

[0039]

【Example】

Example 1 In Example 1, in the variable shaping electron beam drawing apparatus shown in FIGS. 1 to 3, aperture size W = 100 μm,
Assuming that the diagonal line width L = 0.1 μm and the diagonal line aspect ratio a / b = 50, the beam deflection amount D, the rotary slit width SL,
An example of quantifying the electron optical system reduction ratio M will be shown.

The beam deflection amount D is shown in the above equation (5). By substituting the above values W, L and a / b into this equation, the following equation (8) is obtained. D = 100-50SL (8) The condition in this case is D ≧ 0, and the above equation (8)
Therefore, SL may satisfy SL ≦ 2.0. That is, since the rotary slit width SL may be designed to be 2.0 μm, manufacturing becomes easy. In this case, the beam deflection amount D = 0 (μm). From the above equation (7), the electron optical system reduction ratio M is given by the following equation (9). M = 2.0 / 0.1 = 20 (9)

In summary, the rotary slit width SL =
2.0 μm, beam deflection amount D = 0 μm, and electron optical system reduction ratio M = 20. When the rotary slit width SL is 1.0 μm, D is calculated from the above equation (8).
= 50 μm beam deflection amount is required, and reduction ratio M = 1
It suffices to control the reduction lens so that it becomes zero. Such a design value is a value that can be set accurately from a practical point of view.

Therefore, it becomes possible to draw an oblique pattern having an arbitrary angle, and the degree of freedom in device pattern design can be increased. Moreover, it is an electron beam drawing method capable of drawing with high accuracy and high throughput without requiring a transfer mask.

Example 2 In Example 2, in the variable shaping electron beam writing apparatus shown in FIGS. 1 to 3, the aperture size W = 100 μm,
Diagonal line width L = 0.15 μm, diagonal line aspect ratio a / b = 50
Assuming that, the beam deflection amount D and the rotating slit width S
An example in which L and the electron optical system reduction ratio M are quantified will be shown. This is a case where the following design example of the variable shaping electron beam drawing apparatus is obtained by using the same calculation formula as that of the first embodiment.

Here again, two numerical examples are shown. First, the rotary slit width SL = 2.0 μm, the beam deflection amount D = 0 μ
m and the electron optical system reduction ratio M = 13.3. Further, the rotary slit width SL = 1.0 μm, the beam deflection amount D
= 50 μm and the electron optical system reduction ratio M = 6.7.

Example 3 In Example 3, in the variable shaping electron beam drawing apparatus shown in FIGS. 1 to 3, aperture size W = 100 μm,
Diagonal line width L = 0.20 μm, diagonal line aspect ratio a / b = 50
Assuming that, the beam deflection amount D and the rotating slit width S
An example in which L and the electron optical system reduction ratio M are quantified will be shown. This is a case where the following design example of the variable shaping electron beam drawing apparatus is obtained by using the same calculation formula as that of the first embodiment.

Here again, two numerical examples are shown. First, the rotary slit width SL = 2.0 μm, the beam deflection amount D = 0 μ
m and electron optical system reduction ratio M = 10. Further, the rotary slit width SL = 1.0 μm, the beam deflection amount D = 50.
It is also possible to set μm and electron optical system reduction ratio M = 5.

Example 4 In Example 4 as well, in the variable shaping electron beam drawing apparatus shown in FIGS. 1 to 3, aperture size W = 100 μm,
Diagonal line width L = 0.20 μm, diagonal line aspect ratio a / b = 50
Assuming that, the beam deflection amount D and the rotating slit width S
An example in which L and the electron optical system reduction ratio M are quantified will be shown. This is a case where the following design example of the variable shaping electron beam drawing apparatus is obtained by using the same calculation formula as that of the first embodiment.

Here again, two numerical examples are shown. First, the rotary slit width SL = 2.0 μm, the beam deflection amount D = 0 μ
m and electron optical system reduction ratio M = 10. Further, the rotary slit width SL = 1.0 μm, the beam deflection amount D = 50.
It is also possible to set μm and electron optical system reduction ratio M = 5.

Embodiment 5 In this Embodiment 5 as well, in the variable shaping electron beam drawing apparatus shown in FIGS. 1 to 3, aperture size W = 100 μm.
m, diagonal line width L = 0.15 μm, diagonal line aspect ratio a / b =
An example in which the beam deflection amount D, the rotary slit width SL, and the electron optical system reduction ratio M are quantified assuming 10 is shown. This is a case where the following design example of the variable shaping electron beam drawing apparatus is obtained by using the same calculation formula as that of the first embodiment.

Here again, two numerical examples are shown. First, the rotary slit width SL = 10.0 μm and the beam deflection amount D = 0
μm and electron optical system reduction ratio M = 66.7. Further, the rotary slit width SL = 5.0 μm, the beam deflection amount D
= 50 μm and electron optical system reduction ratio M = 33.3.

Embodiment 6 In this Embodiment 6 as well, in the variable shaping electron beam drawing apparatus shown in FIGS. 1 to 3, aperture size W = 100 μm.
m, diagonal line width L = 0.20 μm, diagonal line aspect ratio a / b =
An example in which the beam deflection amount D, the rotary slit width SL, and the electron optical system reduction ratio M are quantified assuming 10 is shown. This is a case where the following design example of the variable shaping electron beam drawing apparatus is obtained by using the same calculation formula as that of the first embodiment.

Here again, two numerical examples are shown. First, the rotary slit width SL = 10.0 μm and the beam deflection amount D = 0
μm and electron optical system reduction ratio M = 50. Also,
Rotating slit width SL = 5.0 μm, beam deflection amount D = 5
It is also possible to set 0 μm and electron optical system reduction ratio M = 25.

Embodiment 7 In this Embodiment 7 as well, in the variable shaping electron beam drawing apparatus shown in FIGS. 1 to 3, aperture size W = 100 μ.
m, diagonal line width L = 0.10 μm, diagonal line aspect ratio a / b =
Assuming 1, the beam deflection amount D and the rotating slit width S
An example in which L and the electron optical system reduction ratio M are quantified will be shown. This is a case where the following design example of the variable shaping electron beam drawing apparatus is obtained by using the same calculation formula as that of the first embodiment.

Here again, two numerical examples are shown. First, the rotary slit width SL = 100.0 μm, the beam deflection amount D =
0 μm and electron optical system reduction ratio M = 1000.
Further, the rotary slit width SL = 50 μm, the beam deflection amount D
= 50 μm, and the electron optical system reduction ratio M = 500.

Example 8 In Example 8 as well, in the variable shaping electron beam drawing apparatus shown in FIGS. 1 to 3, aperture size W = 100 μm,
Assuming that the diagonal line width L = 0.20 μm and the diagonal line aspect ratio a / b = 1, the beam deflection amount D, the rotary slit width SL,
An example of quantifying the electron optical system reduction ratio M will be shown. This is a case where the following design example of the variable shaping electron beam drawing apparatus is obtained by using the same calculation formula as that of the first embodiment.

Here again, two numerical examples are shown. First, the rotary slit width SL = 100.0 μm, the beam deflection amount D =
0 μm and electron optical system reduction ratio M = 666.7. It is also possible to set the rotary slit width SL = 50 μm, the beam deflection amount D = 50 μm, and the electron optical system reduction ratio M = 333.3.

Example 9 In Example 9 as well, in the variable shaping electron beam writing apparatus shown in FIGS. 1 to 3, aperture size W = 100 μm,
Assuming that the diagonal line width L = 0.20 μm and the diagonal line aspect ratio a / b = 1, the beam deflection amount D, the rotary slit width SL,
An example of quantifying the electron optical system reduction ratio M will be shown. This is a case where the following design example of the variable shaping electron beam drawing apparatus is obtained by using the same calculation formula as that of the first embodiment.

Here again, two numerical examples are shown. First, the rotary slit width SL = 100.0 μm, the beam deflection amount D =
0 μm and electron optical system reduction ratio M = 500. Further, the rotary slit width SL = 50 μm, the beam deflection amount D =
It is also possible to set 50 μm and electron optical system reduction ratio M = 250.

As described in detail in Embodiments 1 to 9 above, in the variable shaping electron beam drawing apparatus of the present invention, 2
An existing electron beam drawing device with a rectangular shaping aperture,
For example, by inserting a rotary slit as a third aperture in the Hitachi HL-800D, it is possible to form a parallelogram beam with an arbitrary angle at low cost using the electron optical system of the conventional electron beam drawing apparatus. It will be possible. At the same time, it is possible to perform diagonal line drawing with high accuracy and high throughput.

[0060]

According to the variable shaping electron beam drawing apparatus of the first aspect of the present invention, an existing electron beam drawing apparatus having two rectangular shaping apertures is provided with a slit rotatable about an optical axis by a high precision motor drive. It also has a third aperture. Therefore, by rotating the third aperture, it is possible to form an arbitrary parallelogram beam, and it is possible to draw an oblique line with high accuracy and high throughput. .

According to the variable shaped electron beam drawing apparatus of claim 2,
2. The variable shaped electron beam drawing apparatus according to claim 1, wherein the beam passing through the two beam forming rectangular apertures and the third aperture is formed by controlling a beam deflection amount by a deflector, a slit rotation angle, and a lens reduction ratio. Thus, the diagonal pattern in the design pattern is made to be equivalent or similar. Therefore, in addition to the effect of the variable shaping electron beam drawing apparatus according to the first aspect, it is possible to perform oblique line drawing with higher accuracy.

In the variable shaped electron beam drawing apparatus of claim 3,
2. The variable shaped electron beam drawing apparatus according to claim 1, wherein a highly precise drawing of an oblique line drawn by rotating a third aperture, which corresponds to a design pattern such as a cell projection method, is performed. No mask needed. Therefore, in addition to the effect of the variable shaping electron beam drawing apparatus of claim 1, a low cost apparatus is realized.

[Brief description of drawings]

FIG. 1 shows a variable shaped electron beam drawing apparatus of the present invention,
It is a figure which shows notionally the state of the parallelogram beam formation.

FIG. 2 shows a variable shaped electron beam drawing apparatus of the present invention,
It is a figure which shows an example of a parallelogram whose design pattern.

3 illustrates a shape of a parallelogram beam formed by a first aperture 1 and a second aperture 2, and a third aperture 3 having a slit 3a in the variable shaping electron beam writing apparatus shown in FIG. It is a figure.

FIG. 4 is a functional block diagram showing a system configuration of the variable shaping electron beam drawing apparatus shown in FIG.

FIG. 5 is a diagram for explaining a development transition of an electron beam drawing method.

FIG. 6 is a diagram illustrating a method of drawing a trapezoidal pattern by a variable shaped mask drawing device.

FIG. 7 is a conceptual diagram for explaining a variable shaped beam drawing system.

FIG. 8 is a conceptual diagram for explaining a cell projection method.

[Explanation of symbols]

 1 1st aperture 1a rectangular hole 2 2nd aperture 2a rectangular hole 3 3rd aperture 3a slit 4 gear 5 motor 6 design pattern 11 electron gun 12 blanker 13 reduction lens 14 drawing stage 15 CAD pattern data 16 beam deflection amount D determination part 17 Slit Rotation Angle α Determining Section 18 Lens Reduction Ratio M Determining Section 19 Stage Movement S Determining Section

Claims (3)

[Claims] 1. A variable shaping electron beam drawing apparatus having two rectangular apertures for beam shaping, wherein a slit which is rotatable around an optical axis by a high precision motor drive under the rectangular aperture for beam shaping. A variable shaping electron beam drawing apparatus, comprising: a third aperture formed with a beam, and forming an arbitrary parallelogram beam by rotating the third aperture. 2. The beam passing through the two rectangular apertures for beam shaping and the third aperture is formed by controlling the beam deflection amount by the deflector, the slit rotation angle, and the lens reduction ratio. 2. The above-mentioned diagonal pattern of FIG.
The variable shaping electron beam drawing apparatus described. 3. A transfer mask corresponding to a design pattern, such as a cell projection method, is not required for high-precision drawing of an oblique line having an arbitrary angle drawn by rotating the third aperture. The variable-shaped electron beam drawing apparatus according to claim 1, wherein