JPH098011A - Method and apparatus for processing plasma - Google Patents

Abstract

PURPOSE: To prevent the rear of a substrate from being contaminated and eliminate a fluctuation in a plasma damage distribution and a temperature distribution on a substrate surface. CONSTITUTION: When a substrate placed inside a processing chamber 10 is to be preheated by a hot plate 26, a rear face of the substrate W and the upper face of the hot plate 26 are brought close to each other so that the substrate W is supported by point contact or line contact by a substrate support member 40. At the time of ashing after preheating, the substrate W is separated from the hot plate 26 so that the substrate W is supported by point contact or line contact by the substrate support member 40.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing method and apparatus for generating plasma to remove a photoresist film on a substrate such as a wafer and perform etching.

[0002]

2. Description of the Related Art For example, in a VLSI manufacturing process or the like, there is a plasma processing apparatus which uses plasma to remove a photoresist film from a surface of a substrate (ashing treatment) or selectively etch the surface of the substrate. used. This plasma processing apparatus is disclosed in U.S. Pat. S. P. 5,
As disclosed in JP-A-63-260030 and Japanese Patent Laid-Open No. 63-260030, a treatment chamber formed of an insulating material such as quartz glass and capable of being sealed, and an induction coil disposed on the outer surface side of the treatment chamber. Or electrode plasma generating member (plasma source), high frequency power source for applying high frequency voltage to the plasma generating member to generate plasma inside the processing chamber, gas supply unit for supplying processing gas into the processing chamber, processing chamber Is configured to include a vacuum exhaust unit for exhausting the inside of the vacuum.
In this plasma processing apparatus, after the substrate is loaded into the processing chamber, the processing chamber is hermetically closed,
After the inside of the processing chamber is evacuated, the processing gas is introduced into the processing chamber while continuing the vacuum exhaust, a high frequency voltage is applied to the induction coil and the electrode to generate plasma inside the processing chamber, and the plasma is generated. The substrate is processed by introducing the atmosphere to the surface of the substrate.

In the above-described plasma processing apparatus, the substrate to be processed is carried into the processing chamber, placed on the upper surface of the hot plate, and plasma-processed while being placed on the hot plate. Then, when it is necessary to heat the substrate, a heater is internally provided in the hot plate so that the substrate placed in close contact with the upper surface of the hot plate is heated by heat conduction.
Further, as disclosed in JP-A-63-186419, a substrate holder on which a substrate is placed is supported so as to be reciprocally movable in the vertical direction, and a heating unit is fixedly provided below the substrate holder. When the substrate is heated, the substrate holder is lowered and brought into contact with the heating unit, and the substrate placed in close contact with the upper surface of the substrate holder is heated by heat conduction from the heating unit.

[0004]

However, even if the substrate is placed on the hot plate (or substrate holder), the back side of the substrate will be contaminated. Moreover, in the conventional plasma processing apparatus, since the plasma processing is performed with the substrate placed on the hot plate, the substrate is placed on the hot plate so that there is no gap between the upper surface of the hot plate and the back surface of the substrate. Must be in close contact. That is, if there is a portion where the back surface of the substrate is in contact with the upper surface of the heat plate and a portion that is slightly apart due to warpage of the substrate, the capacitance of the capacitor between the back surface of the substrate and the upper surface of the heat plate is This causes a large variation in the distribution, which causes a large variation in the distribution of damage to the surface of the substrate from the plasma, and also a variation in the temperature distribution in the plane of the substrate. Therefore, an electrostatic chuck attracts the substrate to the hot plate or presses the substrate against the hot plate from above so that the entire back surface of the substrate is evenly adhered to the upper surface of the hot plate. Contamination may occur on the entire back surface of the.

The present invention has been made in view of the above circumstances, and it is possible to prevent contamination on the back surface side of the substrate, and the plasma damage distribution and temperature distribution on the substrate surface greatly vary. An object of the present invention is to provide a plasma processing method which does not cause such inconvenience, and a plasma processing apparatus suitable for carrying out the method.

[0006]

A plasma processing method according to claim 1, wherein a substrate accommodated in a processing chamber is heated by a heating means, and then plasma is generated to perform a predetermined processing on the substrate. In the method, the substrate is heated by the heating means while supporting the substrate by point contact or line contact by the substrate support means in a state where the substrate and the heating means are in close proximity, and the substrate and the heating means are separated from each other. In this state, the substrate is supported by the substrate supporting means by point contact or line contact, and plasma is generated to perform a predetermined process on the substrate.

A plasma processing apparatus according to a second aspect of the present invention is a plasma processing apparatus for generating a plasma to perform a predetermined processing on a substrate, wherein the processing chamber accommodates the substrate in a horizontal posture, and below the processing chamber. The heating means and the substrate support are arranged so as to change the distance between the heating means for heating the substrate, the substrate support means for supporting the substrate, and the substrate supported by the substrate support means and the heating means. When the substrate is heated by the drive means for moving the means relative to the heating means, the drive means is stopped in a state where the substrate and the heating means are brought close to each other, and plasma is generated to cause the substrate to move. When performing a predetermined process, a control unit that stops the driving unit in a state where the substrate and the heating unit are separated from each other, and a control unit that is provided all around the inner wall side of the processing chamber, Having a shielding member having a inner peripheral edge adjacent to the periphery of the substrate in the state obtained by separating the thermal unit.

A plasma processing apparatus according to a third aspect of the present invention is a plasma processing apparatus for generating a plasma to perform a predetermined processing on a substrate, the processing chamber accommodating the substrate in a horizontal posture, and a processing chamber below the processing chamber. A heating unit that is disposed and that heats the substrate, and a protrusion member that is provided on the upper surface of the heating unit and that mounts the substrate so as to form a gap between the upper surface of the heating unit and the back surface of the substrate, Substrate supporting means for supporting the substrate; driving means for relatively moving the heating means and the substrate supporting means so as to change the distance between the substrate supported by the substrate supporting means and the heating means; When the substrate is heated by the heating means, the driving means is stopped in a state where the substrate and the heating means are brought close to each other so that the substrate is placed on the protruding member, and plasma is generated to cause the substrate to move. When performing a fixed process, a control unit that stops the driving unit in a state where the substrate and the heating unit are separated from each other, and a substrate and the heating unit that are provided all around the inner wall side of the processing chamber. And a shielding member having an inner peripheral edge that is close to the peripheral edge of the substrate in the separated state.

A plasma processing apparatus according to a fourth aspect is the plasma processing apparatus according to the second or third aspect, wherein the heating means is fixed and the substrate supporting means is the driving means. It can be moved up and down.

A plasma processing apparatus according to a fifth aspect is the plasma processing apparatus according to the fourth aspect, wherein an upper end portion of the substrate supporting means that abuts a back surface of the substrate is formed of an insulating material.

A plasma processing apparatus according to a sixth aspect of the present invention is the plasma processing apparatus according to any of the second to fifth aspects, wherein the processing chamber and the shielding member are made of an insulating material. .

[0012]

According to the plasma processing method of the present invention, the substrate is supported by point contact or line contact both during heating and during predetermined processing in which plasma is generated, and the substrate is supported by the substrate supporting means. Since the contact is made only at several points or linearly, the contamination on the back surface side of the substrate caused by the substrate being placed directly on the heating means is prevented. Then, at the time of heating, the substrate is supported in a state of being close to the heating means, and the heating is performed by a so-called proximity bake method which depends on heat conduction of a gas layer existing in the gap between the substrate and the heating means. Be done. On the other hand, when performing a predetermined process after heating, the substrate is separated from the heating means.

Here, it is assumed that when the substrate is directly placed on the heating means, the substrate is warped to the extent that a portion of the substrate is lifted by, for example, 0.1 mm. If the predetermined processing is performed with the substrate placed on the heating means in this way, the distribution of the capacitor capacitance between the back surface of the substrate and the upper surface of the heating means greatly varies in the substrate surface. The distribution of damage that the substrate surface receives from the plasma also greatly varies. Further, heat conduction from the heating means to the substrate is not uniform in the plane of the substrate, and the temperature distribution in the plane of the substrate also varies. On the other hand, in the method of the present invention, the substrate is separated from the heating means by, for example, 10 mm above when performing a predetermined process after heating. Therefore, the in-plane variation of the distance between the back surface of the substrate and the upper surface of the heating unit due to the warp of the substrate is 1% (= 0.1 mm / 10).
mm), and the influence of the in-plane variation of the distance on the in-plane variation of the capacitor capacitance distribution is negligible. Therefore, the influence on the plasma damage distribution in the surface of the substrate is not a problem. Further, during the predetermined processing, the substrate is separated from the heating means and placed in a vacuum atmosphere, so that heat conduction from the heating means to the substrate does not occur, and therefore, the variation of the temperature distribution in the substrate surface does not occur. . Even if the heat transfer from the heating means to the substrate during the predetermined processing is not expected, since the substrate is heated before starting the predetermined processing, there is no problem and the predetermined processing starts. The substrate receives heat from the plasma, and further, for example, when the photoresist film is peeled off, the temperature rises due to the reaction heat when the photoresist is oxidized. Therefore, heat conduction from the heating means is particularly necessary. is not.

In the plasma processing apparatus according to the second aspect,
The substrate is supported by the substrate supporting unit both when the substrate is heated by the heating unit and when the substrate is subjected to a predetermined process by generating plasma. When the heating means heats the substrate, the driving means relatively moves the heating means and the substrate supporting means,
The control means stops the driving means in a state where the distance between the substrate supported by the substrate supporting means and the heating means is changed and the substrate and the heating means are brought close to each other. On the other hand, when plasma is generated to perform a predetermined process on the substrate, the heating unit and the substrate supporting unit are relatively moved by the driving unit,
The distance between the substrate supported by the substrate supporting unit and the heating unit is changed, and the control unit stops the driving unit in a state where the substrate and the heating unit are separated from each other. Therefore, when plasma is generated and a predetermined process is performed on the substrate, the substrate is separated from the heating means, so that the plasma damage distribution and the temperature distribution vary within the substrate surface as described above. Absent. In addition, during a predetermined process, the inner peripheral edge of the shielding member provided on the entire inner wall side periphery of the processing chamber is close to the peripheral edge of the substrate when the substrate and the heating unit are separated from each other. The upper space and the lower space are in a state of being partitioned by the shielding member. Therefore, it can be prevented that plasma is generated between the substrate and the heating means and the utilization efficiency of the applied power is deteriorated.

In the plasma processing apparatus according to claim 3,
The substrate is supported by the substrate supporting unit both when the substrate is heated by the heating unit and when the substrate is subjected to a predetermined process by generating plasma. When the heating means heats the substrate, the driving means relatively moves the heating means and the substrate supporting means,
The control means is driven in a state where the distance between the substrate supported by the substrate supporting means and the heating means is changed, and the substrate and the heating means are brought close to each other so that the substrate is placed on the protruding member provided on the upper surface of the heating means. Stop the means. Therefore, the heating of the substrate is performed by the proximity bake method with a gap formed between the back surface of the substrate and the upper surface of the heating means.
On the other hand, when plasma is generated to perform a predetermined process on the substrate, the heating unit and the substrate supporting unit are relatively moved by the driving unit so that the substrate supported by the substrate supporting unit and the heating unit are separated from each other. The control means stops the driving means in a state where the distance is changed and the substrate and the heating means are separated from each other.
Therefore, when plasma is generated and a predetermined process is performed on the substrate, the substrate is separated from the heating means, so that the plasma damage distribution and the temperature distribution vary within the substrate surface as described above. Absent. In addition, during a predetermined process, the inner peripheral edge of the shielding member provided on the entire inner wall side periphery of the processing chamber is close to the peripheral edge of the substrate when the substrate and the heating unit are separated from each other. The upper space and the lower space are in a state of being partitioned by the shielding member. Therefore, it can be prevented that plasma is generated between the substrate and the heating means and the utilization efficiency of the applied power is deteriorated.

In the plasma processing apparatus according to claim 4,
Since the substrate supporting means reciprocates in the vertical direction by the driving means and the hot plate remains fixed, the mechanism becomes simple as compared with the case where the hot plate is moved. Further, wiring such as a heater and a temperature sensor is connected to the hot plate, but since the hot plate itself does not move, unnecessary force is not applied to the wiring.

In the plasma processing apparatus according to claim 5,
Since the upper end of the substrate supporting means that contacts the back surface of the substrate is formed of an insulating material, the substrate supporting means does not serve as a high-frequency current path.

In the plasma processing apparatus according to claim 6,
Since the processing chamber and the shielding member are made of an insulating material and the portion exposed to the plasma inside the processing chamber is made of non-metal, there is no fear of metal contamination of the substrate.

[0019]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT A preferred embodiment of the present invention will be described below with reference to the drawings.

1 and 2 are front views showing an example of a plasma processing apparatus according to the present invention, in which a part of a schematic structure of a main portion thereof is shown in a longitudinal section.

This plasma processing apparatus has a processing chamber 10 formed of an insulating material having a hemispherical shape such as quartz glass or ceramics, and the processing chamber 10 is formed of a conductive material such as an aluminum material. It is mounted on the base plate 12, and the lower end surface of the processing chamber 10 and the upper surface of the chamber base plate 12 are hermetically joined. A donut-shaped plasma shield plate 14 is fixed to the lower end of the processing chamber 10 along the entire inner wall surface thereof. The plasma shield plate 14 has an inner peripheral edge that is substantially the same as the outer peripheral shape of the substrate W. A gas introduction port 18 communicating with the gas introduction pipe 16 is formed in the upper part of the processing chamber 10.
The gas introduction pipe 16 is connected to a gas supply unit (not shown) by a flow path. An induction coil 20 serving as a plasma source is arranged in the processing chamber 10 so as to surround the outer surface thereof, and the induction coil 20 is connected to a high frequency power source 22. Since the induction coil 20 is thus arranged outside the processing chamber 10, the processing chamber 10
There is no concern about the inside of the being contaminated with metal. The high frequency power supply 22 generates a high frequency current of, for example, several hundred KHz to several hundred MHz.

The chamber base plate 12 has a processing chamber 10
A circular stepped through hole 24 that communicates with the internal space is formed, and a heat plate 26 is inserted into the stepped through hole 24. The space between the inner peripheral surface of the large-diameter portion of the stepped through hole 24 and the outer peripheral surface of the heat plate 26 serves as an annular ventilation passage 28, and the exhaust passage 30 communicating with the annular ventilation passage 28 is
It is formed on one side surface side of the chamber base plate 12. The exhaust passage 30 is connected to an unillustrated vacuum exhaust unit through an exhaust pipe 32 that is connected to the exhaust passage 30. Also,
On the other side surface side of the chamber base plate 12, an opening 34 for taking in and out the substrate W is formed, and a gate valve 36 for opening and closing the opening W and airtightly closing the opening W is attached to the opening 34. .

The heating plate 26 is made of a conductive material such as an aluminum material, has a heater (not shown) therein for preheating the substrate W, and has a temperature of room temperature to 300 ° C., for example. Is adjusted to. Also, the heat plate 26
Is a plurality of, for example, three through pores 3 formed therein.
3 support pins 42 that reciprocate up and down through 8
The substrate supporting member 40 having The substrate supporting member 40 is connected to a piston rod of a cylinder for raising and lowering a substrate, which is not shown, and is controlled to drive the substrate raising and lowering drive cylinder by a control device so as to be stationary at a predetermined position and reciprocate vertically. It is supposed to do.
The upper end portion 44 of the support pin 42 of the substrate support member 40 that abuts the back surface of the substrate W is made of an insulating material such as ceramic. The entire support pin may be made of an insulating material such as ceramic. Further, a flange portion 46 is integrally formed at the lower end of the hot plate 26, and the flange portion 4 of the hot plate 26 is formed.
The upper surface of 6 and the lower surface of the chamber base plate 12 are in airtight contact with an annular seal member 48 interposed.
Further, the upper surface of the heat plate 26 is in contact with the back surface of the substrate W to support the substrate W, and at that time, a gap is formed between the back surface of the substrate W and the upper surface of the heat plate 26. Protruding member 50
A plurality of, for example, three are fixed. Small projection member 50
As, for example, minute ceramic balls are used,
The lower half portion is embedded and attached to the upper surface of the heating plate 26.

Next, the plasma processing performed by using the plasma processing apparatus having the above-mentioned configuration will be described by taking the case of ashing processing as an example.

First, as shown in FIG. 1, the substrate support member 40 has a lowermost position (heating position) in which the upper ends of the support pins 42 are located below the apex positions of the small protrusion members 50 on the upper surface of the heat plate 26, as shown in FIG. At the substrate loading / unloading position intermediate between the uppermost position (processing position) shown in FIG. 2 and the state where the gate valve 36 is open, the substrate W having the photoresist film deposited on its surface is transferred to the chamber by a substrate transfer mechanism (not shown). It is carried into the processing chamber 10 through the opening 34 of the base plate 12 and transferred onto the support pins 42 of the substrate support member 40. When the substrate W is supported by the substrate support member 40, the substrate support member 40
As shown in FIG. 1, the substrate W moves from the support pin 42 of the substrate support member 40 to the small projection member 5 on the upper surface of the heat plate 26.
0, and is supported on the heat plate 26 at three points by the small protrusion member 50. In this state, the substrate is preheated for a predetermined time by the proximity bake method. During this time, the gate valve 36 is closed to make the inside of the processing chamber 10 airtight, and the vacuum exhaust unit is operated to pass through the annular ventilation passage 28 and the exhaust passage 30.
The air inside is eliminated. At this time, as shown in FIG.
Since the upper surface of the substrate W and the inner peripheral edge of the plasma shield plate 14 are separated from each other, the air in the processing chamber 10 is quickly removed. During the preheating of the substrate W, the transfer arm of the substrate W transfer mechanism is withdrawn from the processing chamber 10, the inside of the processing chamber 10 is hermetically sealed, and the inside of the processing chamber 10 is evacuated. Since the operations are performed in parallel, it does not mean that the time required for a series of processes is extended by the time required for the preheating and the throughput is significantly reduced.

When the preheating is completed, the substrate supporting member 40
2 and the substrate W is transferred from the small protrusion member 50 on the upper surface of the heat plate 26 to the support pin 42 of the substrate support member 40,
The substrate supporting member 40 rises to the processing position shown in (4), and the substrate W stands still above the upper surface of the heat plate 26 at a distance of, for example, 10 mm. At this time, the peripheral edge of the substrate W is close to the inner peripheral edge of the plasma shield plate 14. Next, the processing gas sent from the gas supply unit through the gas introduction pipe 16,
For example, oxygen gas or the like is supplied from the gas inlet 18 to the processing chamber 1
While being introduced into 0, vacuum evacuation is continued to keep the inside of the processing chamber 10 at a desired vacuum pressure, for example, several tens of mmTorr to several Torr. At this time, the exhaust of the inside of the processing chamber 10 is performed through a slight gap between the peripheral edge of the substrate W and the inner peripheral edge of the plasma shield plate 14. Then, a high-frequency current is passed through the induction coil 20, plasma is generated inside the processing chamber 10, and the ashing process of the substrate W is performed.

During the ashing process, the peripheral edge of the substrate W supported by the substrate supporting member 40 and the inner peripheral edge of the plasma shield plate 14 are close to each other, so that the substrate W and the plasma shield plate 14 allow the inside of the processing chamber 10 The stepped through hole 24 of the chamber base plate 12 is partitioned. Therefore, plasma is not generated between the substrate W and the heating plate 26,
It does not occur that the utilization efficiency of the applied power is deteriorated or that an arc-like local discharge is generated in the through pores 38 formed in the heating plate 26. Further, as described above, the exhaust of the inside of the processing chamber 10 is performed through the slight gap between the peripheral edge of the substrate W and the inner peripheral edge of the plasma shield plate 14, so that the peripheral edge of the substrate W and the plasma shield plate 14 are separated. It does not occur that the exhaust gas is biased toward the vacuum source and the in-plane distribution of the ashing rate is deteriorated as in the case where the distance to the inner peripheral edge is increased.

When the ashing process is completed, the substrate support member 40 descends and stops at the substrate loading / unloading position. And
A purge gas such as nitrogen gas is introduced from the gas supply unit into the processing chamber 10 through the gas introduction port 18, and the inside of the processing chamber 10 is returned to atmospheric pressure. At this time, the substrate supporting member 40 moves downward from the state shown in FIG. 2 and stands still at the substrate loading / unloading position, and the edge of the substrate W and the inner edge of the plasma shielding plate 14 are separated from each other. Therefore, the return to the atmospheric pressure in the processing chamber 10 is quickly performed. When the inside of the processing chamber 10 returns to atmospheric pressure, the gate valve 36 is opened, and the processed substrate is removed from the support pins 42 of the substrate support member 40 by the substrate transfer mechanism, and the substrate is transferred to the chamber base plate 12. Opening 34
And is carried out of the processing chamber 10. Then, the substrate W to be processed next is transferred into the processing chamber 10,
The same operation as above is repeated.

In the above embodiment, the small protrusion member 50 is fixedly mounted on the upper surface of the heat plate 26, and when the substrate W is preheated, the substrate W is supported by the small protrusion member 50 on the upper surface of the heat plate 26. Although it was configured, without providing a small protrusion member on the upper surface of the hot plate,
The substrate support member is allowed to rest at a position where the upper ends of the support pins thereof are slightly projected from the upper surface of the hot plate, and when the substrate is preheated, the substrate is supported by the substrate support member and the back surface of the substrate and the hot plate. It may be configured so as to be supported in a state where it is close to the upper surface of the.

Although the induction coil 20 is used as the plasma source in the above embodiment, an electrode may be used as the plasma source. Further, as in the above-mentioned embodiment, it is preferable that the heat plate 26 is fixed and the substrate supporting member 40 is reciprocally moved in the vertical direction, but the heat plate may be vertically movable. Further, the apparatus of the embodiment includes the processing chamber 10, the chamber base plate 12, and the heating plate 26.
Are fixed and the substrate is carried in and out of the processing chamber 10 by the chamber base plate 1
However, the processing chamber and the chamber base plate and the heating plate can be relatively reciprocally moved in the vertical direction so that the substrate can be reciprocally moved. It is also possible to adopt a device configuration in which the chamber base plate and the heating plate are separated from each other so that the upper surface side of the heating plate is opened at the time of loading and unloading.

[0031]

According to the plasma processing method of the first aspect, when the substrate is heated by the heating means, the substrate is point-contacted or linearly contacted by the substrate supporting means while the substrate and the heating means are placed close to each other. When the substrate is supported by contact and plasma is generated to perform a predetermined process, the substrate is supported by the substrate support means in a state of being separated from the heating means by point contact or line contact. Since the back surface of the substrate is not contaminated and the plasma damage distribution and the temperature distribution on the substrate surface are not varied, the processing quality of the substrate can be improved.

According to the plasma processing apparatus of the second aspect, the driving means is stopped by the control means in a state where the substrate and the heating means are brought close to each other, and the substrate is heated by the heating means, and the substrate and the heating means. In the state where the and are separated, the control means stops the driving means to generate the plasma and perform the predetermined processing on the substrate, so that the back surface side of the substrate is not contaminated and the plasma on the substrate surface is not generated. Since there is no variation in damage distribution or temperature distribution, the processing quality of the substrate can be improved. Further, since the plasma generation between the substrate and the heating means can be blocked by the shielding member, it is possible to avoid a disadvantage such as deterioration of utilization efficiency of the applied power.

According to the plasma processing apparatus of the third aspect, the control means drives the substrate and the heating means in close proximity to each other so that the substrate is placed on the protrusion member provided on the upper surface of the heating means. The heating means to heat the substrate, and the control means to stop the driving means in a state where the substrate and the heating means are separated from each other to generate plasma and perform a predetermined treatment on the substrate. Because
Since the back surface of the substrate is not contaminated and the plasma damage distribution and the temperature distribution on the substrate surface are not varied, the processing quality of the substrate can be improved. In addition, the shield member can prevent plasma generation between the substrate and the heating means, and avoid the disadvantage that the utilization efficiency of the applied power is deteriorated.

According to the plasma processing apparatus of the fourth aspect, the mechanism is simpler and the elevating and lowering device can be downsized as compared with the case where the substrate supporting means is fixed and the heating means is reciprocally moved in the vertical direction. it can. Further, since the heating means itself remains fixed and does not move, there is no fear of causing inconvenience such as disconnection due to an unnecessary force applied to wiring such as a heater or a temperature sensor connected to the heating means.

According to the plasma processing apparatus of the fifth aspect, since the upper end portion of the substrate supporting means abutting on the back surface of the substrate is made of an insulating material, the substrate supporting means serves as a high frequency current path. It is possible to prevent a high-frequency current from flowing to an unnecessary portion of the device.

According to the plasma processing apparatus of the sixth aspect, since the processing chamber and the shielding member are made of an insulating material, the plasma shielding member is provided inside the processing chamber as a cause. No more worrying about metal contamination.

[Brief description of drawings]

FIG. 1 is a longitudinal sectional view of an essential part showing an example of a schematic configuration of a plasma processing apparatus of the present invention, showing a state during preheating.

FIG. 2 is a diagram similarly showing a state during ashing processing.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 10 Processing chamber 12 Chamber base plate 14 Plasma shield plate 20 Induction coil 22 High frequency power supply 26 Thermal plate 40 Substrate support member 42 Support pin 44 Support pin 44 upper end portion formed of an insulating material 50 Small protrusion member W substrate

Claims (6)

[Claims] 1. A plasma processing method in which a substrate housed in a processing chamber is heated by a heating unit, and then plasma is generated to perform a predetermined process on the substrate, wherein the substrate and the heating unit are brought close to each other. In this state, the substrate is heated by the heating means while supporting the substrate by the point contact or the line contact by the substrate supporting means, and the substrate is supported by the substrate supporting means by the point contact or the line contact with the heating means. A plasma processing method characterized in that plasma is generated to perform a predetermined process on a substrate while supporting it by contact. 2. A plasma processing apparatus for generating a plasma to perform a predetermined processing on a substrate, the processing chamber accommodating the substrate in a horizontal posture, the processing chamber being disposed below the processing chamber, and heating the substrate. Heating means, substrate supporting means for supporting the substrate, and drive for relatively moving the heating means and the substrate supporting means so as to change the distance between the substrate supported by the substrate supporting means and the heating means Means and when heating the substrate by the heating means, when the driving means is stopped in a state where the substrate and the heating means are brought close to each other, and when plasma is generated to perform a predetermined treatment on the substrate,
A control unit that stops the driving unit in a state where the substrate and the heating unit are separated from each other, and a control unit that is provided on the entire circumference on the inner wall side of the processing chamber and that separates the substrate and the heating unit from each other. A plasma processing apparatus, comprising: a shield member having an inner peripheral edge adjacent to the peripheral edge. 3. A plasma processing apparatus for generating a plasma to perform a predetermined processing on a substrate, the processing chamber accommodating the substrate in a horizontal posture, the processing chamber being disposed below the processing chamber, and heating the substrate. Heating means, a projection member provided on the upper surface of the heating means, for mounting the substrate so as to form a gap between the upper surface of the heating means and the back surface of the substrate, and substrate supporting means for supporting the substrate, A driving unit that relatively moves the heating unit and the substrate supporting unit so as to change the distance between the substrate supported by the substrate supporting unit and the heating unit; and a heating unit that heats the substrate by the heating unit. Means to stop the driving means in a state where the substrate and the heating means are brought close to each other so as to place the substrate on the protrusion member, generate plasma and perform a predetermined process on the substrate, Control means for stopping the driving means in a state where the heating means is separated from each other, and a peripheral edge of the substrate when the substrate and the heating means are separated from each other, provided on the entire inner circumference of the processing chamber. A plasma processing apparatus, comprising: a shield member having an inner peripheral edge adjacent thereto. 4. The plasma processing apparatus according to claim 2, wherein the heating means is fixed, and the substrate supporting means is vertically movable by the driving means. A plasma processing apparatus characterized by the above. 5. The plasma processing apparatus according to claim 4, wherein the upper end portion of the substrate supporting means that contacts the back surface of the substrate is made of an insulating material. 6. The plasma processing apparatus according to claim 2, wherein the processing chamber and the shielding member are made of an insulating material.