JPH09260583A - High frequency semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent a deterioration of high frequency characteristics and unnecessitate the control of the height of a solder bump by a method wherein a clearance is provided in a position counter to a high frequency circuit chip of a mounting substrate. SOLUTION: A mounting place of a MMIC chip 2 is processed on a semiconductor substrate 11, and a clearance 7 is formed. By using a solder bump 3, the MMIC chip 2 is mounted as a flip chip on the semiconductor substrate 11 in a face-down structure. A high frequency circuit structured on a face of the MMIC chip is deemed to form an upper circuit with only an air. A coplanar type signal bump formation pad and a biasing bump formation pad are formed in an outer periphery of a high frequency circuit formation region. A ground conductor on a reverse face is connected to a signal pad ground conductor via a through hole. Thereby, it is possible to prevent a deterioration of high frequency characteristics and to realize downsizing and high integration by enhancing circuit design precision.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device which processes a high frequency signal of, for example, 1 GHz or higher.

[0002]

2. Description of the Related Art As a method for mounting a high frequency circuit chip such as an MMIC on a substrate, flip-chip mounting in which solder bumps made of gold or the like are used and connected in a face-down structure is often used. This is because the height of the solder bump is an extremely small value of several tens of μm or less, and the influence of the inductance of the connecting portion between the chip and the substrate can be ignored.

FIG. 1 shows the 1995 IEEE MTT-S.
International Microwave S
This is a mounting configuration of a conventional semiconductor device announced at ymposium. Mounting board and high-frequency circuit (for example, MMI
C) The chip 2 is connected by the solder bumps 3. The MMIC chip is mainly composed of a coplanar type or microstrip line mainly composed of a coplanar line, and a high frequency circuit is formed on the front surface of the MMIC chip and a ground conductor is formed on the rear surface thereof.

However, in the conventional semiconductor device, the distance d between the surface of the mounting substrate and the surface of the high-frequency circuit chip (the surface on which the high-frequency circuit is formed) is only the bump height, and the high-frequency characteristics are deteriorated due to the influence of the mounting substrate. There was a problem.

Further, FIG. 2 shows the 1995 IEEE MTT.
-S International Microwave
It is the calculation result which showed the characteristic impedance of the coplanar line | wire announced by Symposium, and the relationship of d.
The substrate thickness of the high-frequency chip is 100 μm, and the central conductor width of the coplanar line is w. The dotted line in the figure is the characteristic impedance when only air is present on the high-frequency chip, and the distance between the center conductor and the ground conductor of the coplanar line is set so that the line characteristic impedance becomes 75Ω. According to this result, the characteristic impedance of the line greatly changes with respect to the change of d regardless of the center conductor width of the coplanar line, and in order to ignore the influence of the mounting substrate, several hundred μm is required on the line. Air layer is required.
Such a change in the characteristic impedance of the line is the same for the microstrip line. Although it is possible to predict the characteristics of the high-frequency circuit after chip mounting from the calculation results shown in FIG. 2, it is difficult to control the distance d between the mounting substrate surface and the chip surface in units of several μm, and high frequency There was a problem that the circuit could not be designed accurately.

[0006]

SUMMARY OF THE INVENTION According to the present invention, flip-chip mounting prevents the deterioration of high-frequency characteristics due to the short distance between the circuit forming surface of the high-frequency circuit chip and the mounting circuit board, and controls the height of solder bumps. It is an object of the present invention to provide a high frequency semiconductor device that can be dispensed with.

[0007]

According to the present invention, in a semiconductor device in which a high-frequency circuit chip 2 is flip-chip mounted on a mounting substrate by using solder bumps, a space 7 is provided on the mounting substrate at a position facing the high-frequency circuit chip 2. Is provided (Claim 1).

Further, the dielectric film 3 is formed on the mounting substrate,
In a semiconductor device in which the high frequency circuit chip 2 is flip-chip mounted on the dielectric film 3 by using solder bumps, it is possible to remove a part or all of the dielectric film 3 at a position facing the high frequency circuit chip 2. It is characterized (claim 2).

Further, in a semiconductor device in which the semiconductor substrate 4 is formed on a mounting substrate and the high frequency circuit chip 2 is flip-chip mounted on the semiconductor substrate 4 by using solder bumps, the high frequency circuit chip 2 is provided at a position facing each other. The semiconductor substrate 4 is removed (claim 5).

In the above semiconductor device, the dielectric film 3 is formed in multiple layers (claim 3).

In the above semiconductor device, different types of dielectric films are laminated in layers instead of the dielectric film 3 (claim 4).

Further, in the above semiconductor device, the mounting substrate is formed of a dielectric material (claim 7).

Further, in the above semiconductor device, the mounting substrate is formed of a semiconductor substrate (claim 8).

Further, in the above semiconductor device in which the semiconductor substrate 4 is formed on the mounting substrate, a control circuit for processing a signal, a digital circuit, or a high frequency circuit is formed on the semiconductor substrate 4 (claim) 6).

Further, in the above semiconductor device in which the mounting substrate is formed of a semiconductor substrate, a control circuit for processing signals, a digital circuit and a high frequency circuit are formed on the mounting substrate (claim 9).

Further, in a semiconductor device in which the mounting substrate is formed of a semiconductor substrate, the light emitting element is formed on the mounting substrate (claim 10).

In the above semiconductor device, the high-frequency circuit chip is a multi-layered high-frequency circuit chip in which a high-frequency circuit chip is formed of a semiconductor substrate and dielectric films and conductors are laminated in multiple layers on the semiconductor substrate. (Claim 11).

Further, in the above semiconductor device, the high frequency circuit chip is a coplanar high frequency circuit chip formed of a semiconductor substrate, and a signal line and a ground conductor are formed on one surface of the semiconductor substrate. Item 12).

Further, in the above semiconductor device, the high frequency circuit chip is formed of a semiconductor substrate, the high frequency circuit is formed on the front surface of the semiconductor substrate, and the ground conductor is formed on the back surface. 13).

In the structure according to the present invention, since the void is formed on the mounting substrate under the flip-chip mounted high frequency circuit chip, the distance between the circuit forming surface of the chip and the mounting substrate surface is not only the height of the solder bump but also the height of the solder bump. The depth of the void is added, and the distance between the circuit formation surface and the mounting substrate surface can be increased. Therefore, the conditions are almost the same as the case where only air exists above the high frequency circuit, the influence of the mounting substrate on the high frequency circuit can be eliminated, and good high frequency characteristics can be obtained. Further, since it is not necessary to consider the influence of the mounting board, the design accuracy is improved.

[0021]

BEST MODE FOR CARRYING OUT THE INVENTION

(Embodiment 1) FIG. 3 shows the configuration of the first embodiment of the present invention. In the figure, a place where the MMIC chip 2 is mounted on the semiconductor substrate 11 is processed by using chemical etching, ion etching or the like to form a void. The depth of the voids 7 is preferably 100 μm or more, for example. Further, the MMIC chip 2 is flip-chip mounted on the semiconductor substrate 11 in a face-down structure using the solder bumps 3.

The shape and size of the void 7 are preferably substantially the same as the shape and size of the bottom surface of the high-frequency circuit chip 2, or the size excluding the pad region having a width of about 100 μm around the chip 2. Is almost equal to.

With the above configuration, the MMI
Since the high frequency circuit formed on the surface of the C chip can be regarded as the upper part of the circuit being formed only by air, the influence of the semiconductor substrate 11 that is a mounting substrate can be ignored, and good high frequency characteristics can be obtained even after mounting. be able to.

Even if the MMIC chip 2 is a coplanar type high frequency circuit formed mainly by using a coplanar line, a high frequency circuit formed mainly by using a microstrip line (circuit on the front surface of the chip, back surface of the chip) The same effect can be obtained even in a multi-layered high frequency circuit in which a ground conductor is formed) and a dielectric film and a conductor are formed in multiple layers on a semiconductor substrate.

FIG. 4 shows an example of the structure of a microstrip type high frequency circuit. 4a shows a cross-sectional view and FIG. 4b shows a top view. A coplanar signal bump forming pad and a bias bump forming pad are formed on the outer periphery of the high frequency circuit forming region. The ground conductor on the back surface and the ground conductor portion of the signal pad are connected by a through hole.

FIG. 5 shows an example of the structure of a coplanar type high frequency circuit. 5a shows a cross-sectional view and FIG. 5b shows a top view.
The signal bump forming pad and the bias bump forming pad are formed on the outer periphery of the high frequency circuit forming region.

FIG. 6 shows an example of the structure of a multilayer high frequency circuit. FIG. 6a shows a sectional view and FIG. 6b shows a top view. A signal bump forming pad and a bias bump forming pad are formed on the outer peripheral portion of the circuit.

FIG. 7 shows an example of the structure of a multilayer high frequency circuit. 7a shows a cross-sectional view and FIG. 7b shows a top view. This multi-layered high-frequency circuit has ground conductors on the uppermost and intermediate layers, and signal bump forming pads and bias bump forming pads are formed on the outer peripheral portion of the circuit.

Further, the high frequency circuit chip mounted on the mounting board may be mounted with a large number of different transistors or chips having different functions.

(Embodiment 2) FIG. 8 shows the configuration of a second embodiment of the present invention. In the figure, the place where the MMIC chip 2 is mounted on the dielectric substrate 12 is processed by using chemical etching, ion etching or the like to form a void. Further, the MMIC chip 2 is flip-chip mounted on the dielectric substrate 12 in a face-down structure using the solder bumps 3.

By configuring as described above, the MMI
Since the high frequency circuit formed on the surface of the C chip can be regarded as the upper part of the circuit being formed only by air, the influence of the dielectric substrate 12 as the mounting substrate can be ignored, and good high frequency characteristics can be obtained even after mounting. Obtainable.

The present embodiment is characterized in that the mounting substrate is a dielectric substrate, and is easier to process and cheaper to obtain than a semiconductor substrate.

The dielectric substrate may be a ceramic such as alumina, a glass epoxy substrate, polyimide, plastic or the like.

Further, even if the MMIC chip 2 is a coplanar type high frequency circuit formed mainly by using a coplanar line, a high frequency circuit formed mainly by using a microstrip line (circuit on the front surface of the chip, back surface of the chip) The same effect can be obtained even in a multi-layered high frequency circuit in which a ground conductor is formed) and a dielectric film and a conductor are formed in multiple layers on a semiconductor substrate.
Further, the high frequency circuit chip mounted on the mounting board may be mounted with a large number of different transistors or chips having different functions.

(Embodiment 3) FIG. 9 shows the configuration of a third embodiment of the present invention. In the figure, a single-layer or multi-layer dielectric film is formed on the semiconductor substrate 11, and the dielectric film at the position where the MMIC chip 2 is mounted is removed by etching or the like to form a void. Furthermore, using solder bumps 3, MM
The IC chip 2 is flip-chip mounted on the dielectric film 6 in a face-down structure.

With the above configuration, the MMI
Since the high frequency circuit formed on the surface of the C chip can be regarded as the upper part of the circuit being formed of only air, the influence of the dielectric film 6 on the mounting substrate can be ignored and good high frequency characteristics can be obtained even after mounting. Obtainable.

A power supply circuit, a high frequency circuit, a ground conductor, etc. may be formed in the dielectric film 6.

Even if the MMIC chip 2 is a coplanar type high frequency circuit formed mainly by using a coplanar line, a high frequency circuit formed mainly by using a microstrip line (circuit on the front surface of the chip, back surface of the chip) The same effect can be obtained even in a multi-layered high frequency circuit in which a ground conductor is formed) and a dielectric film and a conductor are formed in multiple layers on a semiconductor substrate.
Further, the high frequency circuit chip mounted on the mounting board may be mounted with a large number of different transistors or chips having different functions.

A dielectric substrate may be used instead of the semiconductor substrate 11.

(Fourth Embodiment) FIG. 10 shows the configuration of a fourth embodiment of the present invention. In the figure, a single-layer or multi-layer dielectric film 6 is formed on a semiconductor substrate 11, and the MMIC
A part of the dielectric film at the position where the chip 2 is mounted is removed by etching or the like to form a void. Further, the MMIC chip 2 is flip-chip mounted on the dielectric film 6 in a face-down structure using the solder bumps 3.

By configuring as described above, the MMI
Since the high frequency circuit formed on the surface of the C chip can be regarded as the upper part of the circuit being formed of only air, the influence of the dielectric film 6 on the mounting substrate can be ignored and good high frequency characteristics can be obtained even after mounting. Obtainable.

In this embodiment, as compared with the third embodiment, since the dielectric film remains at the position of the chip to be mounted,
The circuit formation area in the dielectric film can be enlarged,
The degree of freedom of the circuit layout formed in the dielectric film is improved.

Even if the MMIC chip 2 is a coplanar type high frequency circuit formed mainly by using a coplanar line, a high frequency circuit formed mainly by using a microstrip line (circuit on the front surface of the chip, back surface of the chip) The same effect can be obtained even in a multi-layered high frequency circuit in which a ground conductor is formed) and a dielectric film and a conductor are formed in multiple layers on a semiconductor substrate.
Further, the high frequency circuit chip mounted on the mounting board may be mounted with a large number of different transistors or chips having different functions.

A dielectric substrate may be used instead of the semiconductor substrate 11.

(Embodiment 5) FIG. 11 shows the configuration of a fifth embodiment of the present invention. In the figure, the MMIC chip 2 is formed on the dielectric substrate 12 by using a resin adhesive, solder, or the like.
The semiconductor substrate 1 is formed so that a void is formed in the place where the
Stick 3 together. Further, the MMIC chip 2 is flip-chip mounted on the semiconductor substrate 13 in a face-down structure using the solder bumps 3.

By configuring as described above, the MMI
Since the high frequency circuit formed on the surface of the C chip can be regarded as the upper part of the circuit being formed only by air, the influence of the semiconductor substrate 13 on the mounting substrate can be ignored, and good high frequency characteristics can be obtained even after mounting. be able to.

The dielectric substrate 12 may be a semiconductor substrate.

Even if the MMIC chip 2 is a coplanar type high frequency circuit formed mainly by using a coplanar line, a high frequency circuit formed mainly by using a microstrip line (circuit on the front surface of the chip, back surface of the chip) The same effect can be obtained even in a multi-layered high frequency circuit in which a ground conductor is formed) and a dielectric film and a conductor are formed in multiple layers on a semiconductor substrate.
Further, the high frequency circuit chip mounted on the mounting board may be mounted with a large number of different transistors or chips having different functions.

(Embodiment 6) FIG. 12 shows the configuration of a sixth embodiment of the present invention. In the figure, a single-layer or multi-layer dielectric film 6 is formed on a semiconductor substrate 11, and the MMIC
A part of the dielectric film at the position where the chip 2 is mounted is removed by etching or the like to form a void. The light emitting element 9 is attached to the semiconductor substrate 11 at the position where the void is formed by using a resin adhesive or solder. Alternatively, the light emitting element 9 is built on the semiconductor substrate 11 by the semiconductor process technology. Further, using the solder bumps 3, the MMIC
The chip 2 is flip-chip mounted on the dielectric film 6 in a face-down structure.

With the above configuration, the MMI
Since the high frequency circuit formed on the surface of the C chip can be regarded as the upper part of the circuit being formed only by air, the influence of the dielectric film 6 on the mounting substrate can be ignored, and good high frequency characteristics can be obtained even after mounting. Obtainable. Furthermore, in this configuration, since the light emitting element is formed on the substrate directly below the mounted MMIC chip, the light emitted from the light emitting element causes
The high frequency circuit can be controlled.

Even if the MMIC chip 2 is a coplanar type high frequency circuit formed mainly by using a coplanar line, a high frequency circuit formed mainly by using a microstrip line (circuit on the chip surface, backside) The same effect can be obtained even in a multi-layered high frequency circuit in which a ground conductor is formed) and a dielectric film and a conductor are formed in multiple layers on a semiconductor substrate.
Further, the high frequency circuit chip mounted on the mounting board may be mounted with a large number of different transistors or chips having different functions.

(Embodiment 7) FIG. 13 shows the configuration of a seventh embodiment of the present invention. In the figure, a dielectric film 61 is formed on the semiconductor substrate 11, and the dielectric film at the position where the MMIC chip 2 is mounted is obliquely removed by etching or the like. Further, a metal thin film is formed by plating or the like on the position removed obliquely. Dielectric films 6 having different dielectric constants are formed on the dielectric film 61 in one layer or in multiple layers, and the dielectric film at the position where the MMIC chip 2 is mounted is removed by etching or the like to form a void. Further, the MMIC chip 2 is flip-chip mounted on the dielectric film 6 in a face-down structure using the solder bumps 3.

By configuring as described above, the MMI
Since the high frequency circuit formed on the surface of the C chip can be regarded as the upper part of the circuit being formed only by air, the influence of the dielectric film 6 on the mounting substrate can be ignored, and good high frequency characteristics can be obtained even after mounting. Obtainable. In addition, the dielectric film 61
Since and 6 have different dielectric constants, the dielectric film 61 functions as an optical waveguide for confining light by utilizing the difference in the refractive index of light in the portions having different dielectric constants. Further, since the metal thin film that reflects light is formed at the end portion formed obliquely, it is possible to transmit the light to the waveguide and irradiate the MMIC chip 2 with the light. Therefore, the light to be transmitted is modulated,
If a light receiving element such as HBT is formed on the MMIC chip,
Electric conversion can be realized.

Even if the MMIC chip 2 is a coplanar type high frequency circuit formed mainly by using a coplanar line, a high frequency circuit formed mainly by using a microstrip line (circuit on the front surface of the chip, back surface of the chip) The same effect can be obtained even in a multi-layered high frequency circuit in which a ground conductor is formed) and a dielectric film and a conductor are formed in multiple layers on a semiconductor substrate.
Further, the high frequency circuit chip mounted on the mounting board may be mounted with a large number of different transistors or chips having different functions.

(Embodiment 8) FIG. 14 shows the construction of an eighth embodiment of the present invention. 14a is a sectional view and FIG. 14b is a top view. In the figure, the semiconductor substrate 13 is attached to the dielectric substrate 12 by using a resin-based adhesive, solder, or the like so that a space is formed at a place where the MMIC chip 2 is mounted. On the semiconductor substrate 13, a control circuit for controlling a high frequency circuit formed in the MMIC chip 2, an analog / digital conversion circuit for converting a high frequency analog signal into a digital signal, and a digital circuit are formed. Further, the MMIC chip 2 is flip-chip mounted on the semiconductor substrate 13 in a face-down structure using the solder bumps 3.

With the above configuration, the MMI
Since the high frequency circuit formed on the surface of the C chip can be regarded as the upper part of the circuit being formed only by air, the influence of the semiconductor substrate 13 on the mounting substrate can be ignored, and good high frequency characteristics can be obtained even after mounting. be able to. Further, since the control circuit 8 or the digital circuit formed on the semiconductor substrate 13 and the high frequency circuit formed on the MMIC chip 2 can be integrated, the high frequency circuit including the control circuit can be downsized and highly integrated.

Even if the MMIC chip 2 is a coplanar type high frequency circuit formed mainly by using a coplanar line, a high frequency circuit formed mainly by using a microstrip line (circuit on the chip surface, backside) The same effect can be obtained even in a multi-layered high frequency circuit in which a ground conductor is formed) and a dielectric film and a conductor are formed in multiple layers on a semiconductor substrate.
Further, the high frequency circuit chip mounted on the mounting board may be mounted with a large number of different transistors or chips having different functions. Further, the semiconductor substrate 13 on which the control circuit and the digital circuit are formed may be a circuit chip on which the control circuit and the digital circuit are formed.

(Ninth Embodiment) FIG. 15 shows the configuration of a ninth embodiment of the present invention. 15a is a sectional view and FIG. 15b is a top view. In the figure, the MMI is formed on the semiconductor substrate 11.
The place where the C chip 2 is mounted is processed to form a void.
The MMI is formed on the semiconductor substrate 11 in which no void is formed.
A control circuit for controlling a high frequency circuit formed on the C chip 2, an analog / digital conversion circuit for converting a high frequency analog signal into a digital signal, and a digital circuit are formed. Further, using the solder bumps 3, the MMIC chip 2
Is flip-chip mounted on the semiconductor substrate 11 in a face-down structure.

By configuring as described above, the MMI
Since the high frequency circuit formed on the surface of the C chip can be regarded as the upper part of the circuit being formed only by air, the influence of the semiconductor substrate 11 that is a mounting substrate can be ignored, and good high frequency characteristics can be obtained even after mounting. be able to. Furthermore, since the control circuit or digital circuit formed on the semiconductor substrate 11 and the high frequency circuit formed on the MMIC chip 2 can be integrated, the high frequency circuit including the control circuit can be downsized and highly integrated.

Even if the MMIC chip 2 is a coplanar type high frequency circuit formed mainly by using a coplanar line, a high frequency circuit formed mainly by using a microstrip line (circuit on the front surface of the chip, back surface of the chip) The same effect can be obtained even in a multi-layered high frequency circuit in which a ground conductor is formed) and a dielectric film and a conductor are formed in multiple layers on a semiconductor substrate.
Further, the high frequency circuit chip mounted on the mounting board may be mounted with a large number of different transistors or chips having different functions.

(Embodiment 10) FIG. 16 shows the structure of a tenth embodiment of the present invention. 16a is a sectional view, FIG.
b is a top view. In the figure, M on the semiconductor substrate 11
A control circuit for controlling a high frequency circuit formed in the MIC chip 2, an analog / digital conversion circuit for converting a high frequency analog signal into a digital signal, and a digital circuit are formed. A single-layer or multi-layer dielectric film 6 is formed on the semiconductor substrate 11 on which the circuit is formed, and the MMIC chip 2
A part or all of the layer of the dielectric film at the position where is mounted is removed by etching or the like to form a void. Further, the MMIC chip 2 is flip-chip mounted on the dielectric film 6 in a face-down structure using the solder bumps 3.

By configuring as described above, the MMI
Since the high frequency circuit formed on the surface of the C chip can be regarded as the upper part of the circuit being formed of only air, the influence of the dielectric film 6 on the mounting substrate can be ignored and good high frequency characteristics can be obtained even after mounting. Obtainable. Further, a control circuit or digital circuit formed on the semiconductor substrate 11 and M
Since the high-frequency circuit formed on the MIC chip 2 can be integrated, the high-frequency circuit including the control circuit can be downsized and highly integrated.

Even if the MMIC chip 2 is a coplanar type high frequency circuit formed mainly by using a coplanar line, a high frequency circuit formed mainly by using a microstrip line (circuit on the front surface of the chip, back surface of the chip) The same effect can be obtained even in a multi-layered high frequency circuit in which a ground conductor is formed) and a dielectric film and a conductor are formed in multiple layers on a semiconductor substrate.
Further, the high frequency circuit chip mounted on the mounting board may be mounted with a large number of different transistors or chips having different functions.

[0064]

As described above, in the semiconductor device of the present invention, it is possible to prevent deterioration of high frequency characteristics caused by flip chip mounting of the high frequency circuit chip on the mounting substrate. Furthermore, since the influence of the mounting board can be ignored, the circuit design accuracy can be improved. Further, by forming the control circuit, the digital circuit, and the light emitting element on the mounting substrate, the high frequency circuit and the control system circuit can be integrated, and the circuit can be downsized and highly integrated.

[Brief description of drawings]

FIG. 1 is a conventional flip-chip mounted semiconductor device.

FIG. 2 is a diagram showing characteristics of a coplanar line.

FIG. 3 is a diagram illustrating a configuration of a first embodiment.

FIG. 4a is a cross-sectional view of a microstrip type high frequency circuit chip.

4b is a top view of FIG. 4a.

FIG. 5a is a cross-sectional view of a coplanar type high frequency circuit chip.

5b is a top view of FIG. 5a.

FIG. 6a is a cross-sectional view of a multilayer high frequency circuit chip.

6b is a top view of FIG. 6a.

FIG. 7a is a cross-sectional view of a multilayer high frequency circuit chip.

FIG. 7b is a top view of FIG. 7a.

FIG. 8 is a diagram showing a configuration of a second exemplary embodiment.

FIG. 9 is a diagram showing a configuration of a third exemplary embodiment.

FIG. 10 is a diagram showing a configuration of a fourth exemplary embodiment.

FIG. 11 is a diagram showing a configuration of a fifth exemplary embodiment.

FIG. 12 is a diagram showing a configuration of a sixth exemplary embodiment.

FIG. 13 is a diagram showing a configuration of a seventh exemplary embodiment.

FIG. 14a is a sectional view showing the structure of the eighth embodiment.

FIG. 14b is a top view of FIG. 14a.

FIG. 15a is a sectional view showing the structure of the ninth embodiment.

15b is a top view of FIG. 15a.

FIG. 16a is a sectional view showing the structure of the tenth embodiment.

16b is a top view of FIG. 16a.

[Explanation of symbols]

 1 substrate 2 MMIC chip 3 bumps 6, 26 dielectric film 7 void 8 control circuit 11, 13, 23 semiconductor substrate 12 dielectric substrate 20, 27 through hole 21, 28 ground conductor 22, 30 microstrip line 24 bump pad 25 Coplanar line 29 Active element

Claims (14)

[Claims] 1. A semiconductor device in which a high-frequency circuit chip (2) is flip-chip mounted on a mounting board by using solder bumps (3), and a space (7) is provided on the mounting board at a position facing the high-frequency circuit chip (2). ) Is provided, the high-frequency semiconductor device. 2. A dielectric film (6) is formed on a mounting substrate,
In a semiconductor device in which a high frequency circuit chip (2) is flip-chip mounted on the dielectric film (6) by using solder bumps (3), the dielectric film (6) at a position facing the high frequency circuit chip (2). High frequency semiconductor device characterized by removing a part or all of the above. 3. The high frequency semiconductor device according to claim 2, wherein the dielectric films (6) are formed in multiple layers. 4. The high frequency semiconductor device according to claim 2, wherein the dielectric film is a dielectric film in which different types of dielectric films are laminated in multiple layers. 5. A semiconductor device in which a semiconductor substrate is formed on a mounting substrate and the high frequency circuit chip (2) is flip-chip mounted on the semiconductor substrate by using solder bumps, and the semiconductor device faces the high frequency circuit chip (2). A high-frequency semiconductor device, wherein a part or all of the semiconductor substrate at the position is removed. 6. The high frequency semiconductor device according to claim 5, wherein at least one of a control circuit for processing a signal, a digital circuit, and a high frequency circuit is formed on the semiconductor substrate. 7. The high frequency semiconductor device according to claim 1, wherein the mounting substrate is formed of a dielectric material (12). 8. The high frequency semiconductor device according to claim 1, wherein the mounting substrate is a semiconductor substrate (11). 9. The high frequency semiconductor device according to claim 8, wherein at least one of a control circuit for processing a signal, a digital circuit, and a high frequency circuit is formed on the mounting substrate. 10. The high frequency semiconductor device according to claim 1, wherein a light emitting element is formed in a space of a mounting substrate. 11. The high frequency semiconductor device according to claim 1, wherein the high frequency circuit chip is formed of a semiconductor substrate, and a dielectric film and a conductor are laminated in multiple layers on the semiconductor substrate. And a high-frequency semiconductor device. 12. The high frequency semiconductor device according to claim 1, wherein the high frequency circuit chip is formed of a semiconductor substrate, and a signal line and a ground conductor are formed on one surface of the semiconductor substrate. A high-frequency semiconductor device characterized by the above. 13. The high frequency semiconductor device according to claim 1, wherein the high frequency circuit chip is formed of a semiconductor substrate, the high frequency circuit is formed on the front surface of the semiconductor substrate, and the ground conductor is formed on the back surface. High frequency semiconductor device. 14. The high frequency semiconductor device according to claim 1, wherein a plurality of high frequency circuit chips are mounted on a mounting substrate.