JPH09209126A - Vacuum deposition device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a vacuum deposition device capable of surely producing a thin film of organic substance with high purity. SOLUTION: The vicinity of the edge of the opening of a crucible 23 of a vacuum depositing source 20 is provided with a barrier 30 projected to the direction of a substrate 12 freely attachably and detachably, ruggedness 32 by fins 33 is formed on the outer face of the barrier 30, and the main body 31 of the barrier is incorporated with a cooling pipe water-cooling the barrier 30 to form a vacuum deposition device. Thus, even if, in the initial stage of vacuum deposition, impurities stuck to the circumference of the vacuum depositing source 20 are warmed to reevaporate, they can be captured by the cooled barrier 30 and do not reevaporate after the capture, so that the intrusion of the impurities into a thin film can be prevented, and the thin film of organic substance with high purity can securely be formed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum vapor deposition apparatus, and more particularly to a vacuum vapor deposition apparatus provided with a vapor deposition source for heating an organic substance in a container and a substrate for vaporizing the organic substance.

[0002]

BACKGROUND ART In recent years, researches on organic electroluminescence elements (organic EL elements) have been actively conducted. Organic E
The L element is formed by laminating a vapor deposition layer made of various vapor deposition materials such as organic substances and metals on a substrate using a vacuum vapor deposition device or the like. The vacuum vapor deposition apparatus has an vapor deposition source that heats the vapor deposition material with a heater or the like, and deposits the vaporized material of the vapor deposition material on the vapor deposition surface (lower surface) of the substrate arranged above the vapor deposition source to form a film. .

[0003] Conventionally, when aluminum is vapor-deposited, a vapor deposition source is used in which a vapor deposition material is put in a cylindrical crucible and heated. According to this, a large amount of vapor deposition material can be continuously processed by one vapor deposition as compared with placing the vapor deposition material on a boat or the like to vaporize it, and it becomes possible to vaporize a large amount of vapor deposition material, thereby improving vapor deposition efficiency. Can be increased.

[0004]

When the vapor deposition material is heated for a long time using the crucible described above, the temperature around the vapor deposition source also rises due to heat transfer from the heater or the vapor deposition material. Among the vapor deposition materials, organic substances have a low vaporization temperature, so among the gases generated from organic substances in the initial stage of heating and decomposed substances of organic substances, those attached to the periphery of the vapor deposition source will re-evaporate with this temperature rise, and There is a problem that it is mixed as an impurity in the thin film deposited on the substrate. Also, when multiple evaporation sources are provided in one vacuum chamber and different organic materials are used for evaporation, the organic materials may be mixed with each other and the purity of the thin film is reduced. There was a problem of doing. For this reason, the organic EL element formed using a relatively large container such as a crucible is unstable, and there is a problem that the purity of the film must be increased in order to stabilize the organic EL element.

An object of the present invention is to provide a vacuum vapor deposition apparatus capable of reliably producing a highly pure thin film made of an organic material.

[0006]

A vacuum vapor deposition apparatus according to the present invention is a vacuum vapor deposition apparatus provided with a vapor deposition source for putting an organic substance in a container for heating and a substrate for vaporizing the organic substance. A barrier is provided near the opening end. Here, a crucible or the like can be used as the container.

In this way, even if the barrier is heated from the base end by the heat transfer due to the temperature rise in the vicinity of the opening end of the container as the vapor deposition source is heated, the barrier can radiate heat from a portion other than the base end. The temperature becomes lower than that of the heated vapor deposition source and the periphery of the container, and it becomes possible to attach the evaporated material. Therefore, in the initial stage of vapor deposition, impurities such as gas generated in the initial stage of heating of organic substances can be captured by the barrier, and the amount of impurities adhering to the walls of the substrate or the vacuum chamber or the periphery of the vapor deposition source can be reduced. Therefore, it is possible to reduce the amount of impurities that are re-evaporated and attached to the substrate or mixed with the organic substance in the container.

Impurities adhering to the wall surface of the vacuum chamber or around the vapor deposition source without being trapped by the barrier are re-evaporated by being heated by the heat transfer when the vapor deposition source is heated for a long time. It becomes possible to prevent the impurities from adhering to the thin film, and to prevent them from adhering to the organic substances and the substrate in the container. Also, if heating is performed for a long time, the pure organic substances attached to the vicinity of the vapor deposition source are easily heated and decomposed products are easily generated, but the re-evaporated products of such decomposed products can also be caught by the barrier. become.

[0009] Of the evaporates evaporated from the container,
Since those that collide with the barrier are trapped, only the vaporized molecules that travel from the evaporation source toward the substrate almost linearly reach the substrate, and it is possible to limit the incident angle of the vaporized molecules to the substrate. A thin film with excellent characteristics can be obtained. Furthermore, even when multiple vapor deposition sources are formed in the same vacuum chamber, the vaporized molecules of other organic substances can be trapped by the barrier, and it is possible to prevent other materials from mixing into the container, and the purity of the thin film is reduced. Can be increased. With these, the above object is achieved.

Further, it is desirable that the barrier is closed in the circumferential direction. This makes it possible to reliably capture impurities by the above-mentioned barrier, and
The incident angle of the vaporized molecules on the substrate can be surely restricted within a narrow range, and a thin film having high purity and excellent characteristics can be reliably formed.

Further, it is desirable that the barrier has irregularities on its outer surface. Here, the outer surface area of the barrier is preferably more than 1 time and not more than 100 times the inner surface area, and the inner surface is preferably formed flat. The inner surface area of the barrier
If it is less than 1 time, the above-mentioned heat dissipation cannot be efficiently carried out to the outside of the barrier, and it is difficult to make it more than 100 times, which is not practical.

According to this, since the outer surface area of the barrier can be expanded by the unevenness, even if the barrier is heated from the base end by the heat transfer from the vapor deposition source, the heat can be efficiently released to the outside of the barrier. become. In addition, more impurities can be captured than the barrier without unevenness.

The unevenness of the barrier may be formed by fins. As a result, the outer surface area of the barrier can be surely and easily expanded simply by providing the fin, and the fin can greatly expand the surface area as compared with simple unevenness, so that heat can be efficiently radiated.

Further, it is desirable that a cooling means for cooling the barrier is provided. Here, the cooling means can be formed by incorporating a cooling pipe for flowing water or the like into the barrier. By doing so, the temperature of the barrier can be lowered to a desired temperature, and even impurities having a low evaporation temperature can be reliably captured, and a thin film of higher purity can be formed.

Further, it is desirable that the barrier is formed so as to project toward the substrate. By doing this, it is possible to reliably capture only the vaporized substances that move in a direction different from the substrate direction, and it is possible to more efficiently limit the incident angle of the vaporized molecules to the substrate and stabilize the thin film characteristics. It becomes possible to make it.

It is desirable that the barrier is detachably provided. According to this, it is possible to easily carry out the cleaning of the barrier to which the impurities are attached, and it is possible to replace the barrier according to the conditions such as the shape and size of the substrate and the type of organic substance.

Further, when a plurality of vapor deposition sources are provided, it is preferable that a barrier is provided near the opening end of each container of each vapor deposition source. By doing this, since the barrier is provided for each container, it becomes possible to capture the evaporated substances from other vapor deposition sources, and it is possible to prevent mixing of other organic substances into the container,
A thin film with high purity can be formed.

[0018]

Embodiments of the present invention will be described below with reference to the drawings. [First Embodiment] FIG. 1 shows a vacuum vapor deposition apparatus 10 of the present embodiment. The vacuum vapor deposition device 10 is configured to include a box-shaped vacuum chamber 11, a substrate 12, a vapor deposition source 20, and a barrier 30 which are installed in the vacuum chamber 11. A recess 111 protruding downward is provided on the bottom surface of the vacuum chamber 11. The substrate 12 is supported on the upper portion of the vacuum chamber 11 so as to face the recess 111 in a substantially horizontal manner by a normal supporting mechanism (not shown).

As shown in FIG. 2, the vapor deposition source 20 has a recess 1
11, a heater 21 provided along the inner wall of the recess 111, a substantially cylindrical heat shield 22 arranged inside the heater 21, and a heat shield 22.
And a substantially cylindrical crucible 23, which is a container arranged inside. The heat shield 22 and the crucible 23 are provided with brim portions 221 and 231 at their respective opening ends, the brim portion 221 of the heat shield 22 is locked around the opening of the recess 111, and the brim portion 231 of the crucible 23 is provided in the heat shield 22. Tsuba part 2
It is locked to the upper surface of 21.

The crucible 23 is made of, for example, quartz, and the organic material is put in the crucible 23 to heat it. The inner diameter of the crucible 23 is 1/2 or less of the long side when the bottom of the vacuum chamber 11 is rectangular, and is 1/2 or less of one side when the bottom of the vacuum chamber 11 is square, and is 1/2 when the bottom is circular. One of its diameter
/ 2 or less. A thermocouple 24 extending from the outside of the vacuum chamber 11 is connected to the lower surface of the crucible 23, the temperature of the crucible 23 is measured by the thermocouple 24, and the heating state of the heater 21 is adjusted by a temperature control means (not shown). You can adjust the temperature of organic substances. It should be noted that this temperature is set according to the evaporation temperature of organic matter, and is generally 15
It is set within the range of 0 ° C to 450 ° C.

In the vicinity of the opening end of the crucible 23, a barrier 30 which is closed in the circumferential direction is provided upright along substantially the opening edge thereof and projects toward the substrate 12. As shown in FIG. 3, the barrier 3
Reference numeral 0 denotes a substantially cylindrical barrier body 31, a plurality of fins 33 that are irregularities 32 provided on the outer surface of the barrier body 31, and
Cooling pipe 3 which is a cooling means built in the barrier body 31
4.

The barrier body 31 has an inner diameter approximately the same as the inner diameter of the crucible 23, and has a mounting flange 311 at the lower end thereof. A hanging portion 312 is formed along the outer periphery of the mounting flange portion 311. The lower end of the hanging portion 312 has a groove 1 formed around the opening side of the recess 111 on the bottom surface of the vacuum chamber 11.
It is fitted in 12. The groove 112 is formed outside the flange portion 221 of the heat shield 22. As a result, the barrier 30 is installed in a state of covering the flange portions 221 and 231 of the heat shield 22 and the crucible 23. Further, the barrier 30 can be attached and detached by fitting and removing the hanging portion 312 described above into the groove 112. At this time, the attachment flange portion 311 may be fixed to the bottom surface of the vacuum chamber 11 by a fixing means such as a bolt as necessary, or may be fixed by welding or the like.

Fins 33 are provided substantially horizontally on the outer peripheral surface of the barrier body 31 at a predetermined interval. Fins 33
Means that the outer surface area of the barrier 30 is less than the inner surface area of the barrier body 31
In the present embodiment, in order to exceed 100 times and 100 times or less,
It is integrally formed with the barrier body 31. The cooling pipe 34 is installed in a spiral shape in the barrier body 31, and a cooling agent, a refrigerant, water, etc. are circulated through the cooling pipe 34 to cool the barrier body 31 and the fins 33. The cooling pipe 34 is provided with temperature control means (not shown) for controlling the temperature of the barrier 30, and is set to a temperature lower than the heating temperature of the organic substance within the range of 100 ° C. or higher and 400 ° C. or lower.

In this embodiment having such a configuration, the thin film is formed by the following procedure. First, recess 1
The heat shield 22 is installed inside the heater 21 in the 11,
A crucible 23 containing organic substances inside the heat shield 22.
After arranging, the hanging portion 312 of the barrier 30 is fitted into the groove 112 on the bottom surface of the vacuum chamber 11 to attach the barrier 30. Next, the inside of the vacuum chamber 11 is evacuated, and water is flown through the cooling pipe 34 to cool the barrier main body 31 and the fins 33 to a desired temperature. Then, the heater 21 is energized to heat the organic material to a desired temperature to perform vapor deposition.

At the initial stage of vapor deposition, a large amount of impurities evaporate due to the generation of gas from the organic solvent contained in the organic substance or the decomposition of the organic substance, and these impurities adhere to the inner surface of the barrier 30. The evaporated material attached to the cooled barrier 30 is de-evaporated because the kinetic energy is taken away. Impurities not captured by the barrier 30 are deposited on the deposition source 20.
The impurities adhere to the bottom surface of the vacuum chamber 11 and the wall surface of the vacuum chamber 11 in the vicinity.
It may be heated by heat transfer from 0 and re-evaporated.
Most of the re-evaporated molecules collide with the barrier 30 and are captured. In addition, when heating is performed for a long time, organic substances that are not impurities attached to the periphery of the vapor deposition source 20 are easily heated and decomposed products are easily generated. However, such re-evaporated products are also captured by the barrier 30. It

Further, among the vaporized substances evaporated from the crucible 23, those that collide with the barrier 30 are captured, so that only the vaporized molecules that are linearly directed from the vaporization source 20 toward the substrate 12 reach the substrate 12. Become. In this way, only a pure organic substance is deposited on the substrate 12, and only vaporized molecules whose incident angle is limited by the barrier 30 are attached to form a thin film.

According to this embodiment, the following effects can be obtained. That is, since the barrier 30 is provided in the vicinity of the opening end of the crucible 23, impurities such as gas generated in the initial stage of heating of the organic substance are trapped by the barrier 30 in the initial stage of vapor deposition, and the wall of the substrate 12 or the vacuum chamber 11 or The amount of impurities attached around the vapor deposition source 20 can be reduced, and the amount of impurities re-evaporated and attached to the substrate 12 or mixed with the organic matter in the crucible 23 can be reduced.

The vacuum chamber 11 is not trapped by the barrier 30.
The re-evaporation product of the impurities adhering to and re-evaporating on the wall surface of the chamber or around the vapor deposition source 20 collides with the barrier 30 and is captured, so that it can be prevented from adhering to the organic substances in the crucible 23 and the substrate 12, Can be prevented from being mixed into the thin film. Further, if heating is performed for a long time, the pure organic substances attached to the periphery of the vapor deposition source 20 are easily heated and decomposed products are easily generated. However, the re-evaporated products of such decomposed products can also be caught by the barrier 30. Therefore, it is possible to prevent the thin film and the organic matter in the crucible 23 from being mixed.

Then, of the vaporized substances evaporated from the crucible 23, those that collide with the barrier 30 are captured, so that only the vaporized molecules that are directed from the vaporization source 20 toward the substrate 12 almost reach the substrate 12. Becomes, substrate 12 of evaporated molecules
The incident angle to the film can be limited, and a thin film with excellent characteristics can be obtained.

Further, since the barrier 30 is provided so as to be closed in the circumferential direction thereof, it is possible to surely capture the impurities by the barrier 30 described above, and at the same time, the substrate 12 of vaporized molecules is used.
It becomes possible to reliably limit the incident angle to the narrow range,
A thin film with high purity and excellent characteristics can be reliably formed.

Since the irregularities 32 are provided by the fins 33 on the outer surface of the barrier 30, the outer surface area of the barrier 30 can be expanded, and even if the barrier 30 is heated from the base end by heat transfer from the vapor deposition source 20, the heat of the heat can be increased. Can be efficiently released to the outside of the barrier 30. Moreover, more impurities can be captured than the barrier without the unevenness 32. Furthermore, since the unevenness 32 can be formed only by providing the fins 33 on the barrier body 31,
The outer surface area of the barrier 30 can be expanded reliably and easily, and since the surface area of the fins 33 can be greatly expanded as compared with mere unevenness, heat dissipation and impurity adsorption can be performed efficiently.

Further, since the cooling pipe 34 for circulating the refrigerant, water, etc. is provided in the barrier body 31, the temperature of the barrier 30 can be surely lowered, and even impurities having a low evaporation temperature can be surely captured, and the purity can be improved. A high thin film can be formed. Further, since the temperature control means (not shown) for controlling the temperature within the range of 100 ° C. or higher and 400 ° C. or lower is provided, the temperature of the barrier 30 can be adjusted according to the type of organic substance, and unnecessary cooling is not necessary. At this time, for example, when the evaporation temperature of the impurities is higher than the evaporation temperature of the pure organic substance, if the temperature of the barrier 30 is set to a temperature in the interval, only the impurities can be trapped, and the organic substance is not wasted. Can be vapor-deposited on.

Further, since the barrier 30 is provided so as to project in the direction of the substrate 12, the vaporized substance moving in a direction different from the direction of the substrate 12 is reliably captured. Therefore, the substrate 1 of evaporated molecules
It is possible to more efficiently limit the angle of incidence on the beam 2, and stabilize the characteristics of the thin film.

In addition, since the barrier 30 is detachably provided, it is possible to easily clean the barrier 30 to which the impurities are attached and remove the barrier 30 according to the conditions such as the shape and size of the substrate 12 and the type of organic substance. The barrier 30 can be replaced. Further, since the organic substance is put in the crucible 23 and heated, a large amount of organic substances can be processed by one vapor deposition, and a large amount of vapor can be deposited, so that the vapor deposition efficiency can be improved.

[Second Embodiment] The vacuum vapor deposition apparatus 40 of the present embodiment shown in FIG. 4 has substantially the same structure as the vacuum vapor deposition apparatus 10 of the first embodiment, and has a vapor deposition source 20 and a barrier 30.
However, the same parts are denoted by the same reference numerals and detailed description thereof will be omitted, and only different parts will be described in detail below. The vacuum vapor deposition device 40 has two vapor deposition sources 20A and 2A.
0B, and these vapor deposition sources 20A and 20B are provided obliquely with respect to the bottom surface of the vacuum chamber 11 so that the opening of the crucible 23 faces the substrate 12.

Barriers 30A and 30B are attached near the open ends of the respective crucibles 23 of the vapor deposition sources 20A and 20B, and these barriers 30A and 30B are the vapor deposition sources 2 respectively.
Similar to 0A and 20B, each of them projects in the direction of the substrate 12 and stands upright with respect to the bottom surface of the vacuum chamber 11. In the present embodiment configured as described above, each vapor deposition source 20
By using different organic substances for A and 20B, a two-layer thin film is continuously formed on the substrate 12 without breaking the vacuum.

According to this embodiment, the same operation and effect as those of the first embodiment can be obtained, and in addition, the following effects can be obtained. That is, since the barriers 30A and 30B are provided in the vicinity of the crucible 23 of the vapor deposition sources 20A and 20B, the vaporized molecules of the organic substances of the vapor deposition sources 20A and 20B can be captured by the barriers 30A and 30B, respectively. Invasion of other organic substances into the container can be prevented, and the purity of each thin film due to each organic substance can be increased. Further, since the crucible 23 and the barriers 30A and 30B respectively project in the direction of the substrate 12, it becomes possible to capture the evaporated substances moving in the direction different from the direction of the substrate 12, and the substrate 1 of the evaporated molecules is
It becomes possible to limit the angle of incidence on 2 and stabilize the characteristics of the thin film.

The present invention is not limited to the above-described embodiment, but includes other configurations and the like that can achieve the object of the present invention, and the following modifications and the like are also included in the present invention.
That is, in each of the above embodiments, the barriers 30, 30A, 3
0B was provided with the unevenness 32 by the fin 33, but this unevenness 32 may be omitted. However, if the unevenness 32 is provided, the above-described effect can be exhibited, and thus it is preferable to provide the unevenness.

Further, in the case of providing the unevenness 32, as shown in FIG.
As shown in (A), the outer surface of the barrier body 31 may be formed into a corrugated shape to form the unevenness 32. As shown in FIG. 5 (B),
The unevenness 32 may be formed by a protrusion 51 thicker than the fin 33, or may be formed by a V groove 52 formed by cutting out the barrier body 31 as shown in FIG. 5C.

Although the barriers 30, 30A, 30B are provided so as to be closed in the circumferential direction, they may be divided by a slight gap. Further, the inner diameter of the barrier body 31 is the crucible 2
Although the inner diameter is substantially the same as the inner diameter of the crucible 3, the inner diameter may be about the diameter of the opening of the recess 111, or may be slightly smaller than the inner diameter of the crucible 23. However, in order to limit the angle of incidence of the evaporated material on the substrate 12 and to reliably capture the impurities, it is preferable that the inner diameter of the crucible 23 be substantially the same. Further, the height of the barriers 30, 30A, 30B is not particularly limited, but may extend, for example, to the vicinity of the substrate 12, and the uniformity of the thickness of the film deposited on the substrate 12 and the substrate 12 may be increased.
It may be appropriately set depending on the distance between the vapor deposition source 20, 20A, and 20B.

In each of the above-described embodiments, the cooling pipe 34 is provided in the barrier body 31 as a cooling means, but the barrier 30 is different from the attachment flange 311 near the vapor deposition sources 20, 20A, 20B and the base end of the barrier body 31. Since heat can be dissipated from the fins 33, etc., no cooling means need be provided. When the cooling pipe 34 is provided as the cooling means, it may be wound around the peripheral surface of the barrier body 31 or may be built in the fin 33.
Further, a heat pipe is provided as a cooling means, and the vacuum chamber 11
The heat of the barriers 30, 30A, 30B may be released to the outside. In short, the cooling means may be of any type as long as the barriers 30, 30A, 30B can be cooled.

In each of the above embodiments, the barrier 3 having substantially the same shape.
Although vapor deposition was performed using 0, 30A, and 30B, various barriers were prepared in advance, and the types of organic substances used as vapor deposition materials,
Deposition may be performed by appropriately selecting and mounting a material according to the film thickness, the size and shape of the substrate, and the like. Although the column-shaped crucible 23 is used as the container in each of the above-described embodiments, a prismatic container or a boat-shaped container may be used.

In the second embodiment, two vapor deposition sources 20 are used.
Although A and 20B are provided, three or more may be provided, and
The barrier may be provided on only one of the two vapor deposition sources 20A and 20B. In addition, the substrate 12 and the vapor deposition source 20A,
Although the position of 20B was fixed, for example, the vapor deposition source 20
A and 20B may be provided perpendicularly to the bottom surface of the vacuum chamber 11, and the substrate 12 may be moved to directly above the vapor deposition sources 20A and 20B to sequentially perform vapor deposition.

[0044]

As described above, according to the present invention,
By providing a barrier near the open end of the vapor deposition source container, impurities such as gas generated in the initial stage of heating of organic substances can be captured by the barrier in the initial stage of vapor deposition, and the walls of the substrate and vacuum chamber and vapor deposition can be deposited. The amount of impurities attached to the periphery of the source can be reduced, and the amount of impurities that are re-evaporated and attached to the substrate or mixed with an organic substance in the container can be reduced.

Impurities adhering to the wall surface of the vacuum chamber and the vicinity of the vapor deposition source without being trapped by the barrier are heated and re-evaporated when the vapor deposition source is heated for a long time, but these re-evaporated substances collide with the barrier. It is possible to prevent the impurities from being captured and adhered to the organic substances and the substrate in the container, and to prevent impurities from mixing into the thin film.
In addition, if heating is performed for a long time, the pure organic substances attached to the periphery of the vapor deposition source are easily heated to generate decomposition products, but the re-evaporated products of such decomposition products can also be caught by the barrier.

Then, of the evaporates evaporated from the container,
Since those that collide with the barrier are trapped, only the vaporized molecules that travel from the vaporization source toward the substrate almost linearly reach the substrate, and the angle of incidence of the vaporized molecules on the substrate can be limited, which is excellent. A characteristic thin film is obtained. Further, even when a plurality of vapor deposition sources are formed in the same vacuum chamber, vaporized molecules of other organic substances can be trapped by the barrier, and it is possible to prevent other materials from mixing into the container and improve the purity of the thin film. be able to.

[Brief description of drawings]

FIG. 1 is a sectional view showing a first embodiment of the present invention.

FIG. 2 is an enlarged cross-sectional view showing the vapor deposition source of the embodiment.

FIG. 3 is a perspective view showing a half-divided state of the barrier of the embodiment.

FIG. 4 is a sectional view showing a second embodiment of the present invention.

FIG. 5 is a sectional view showing a modification of the present invention.

[Explanation of symbols]

 10, 40 Vacuum deposition apparatus 12 Substrate 20, 20A, 20B Deposition source 23 Container 30, 30A, 30B Barrier 32 Concavo-convex 33 Fin 34 Cooling means

Claims (8)

[Claims] 1. A vacuum vapor deposition apparatus comprising a vapor deposition source for heating an organic substance in a container and a substrate for vaporizing the organic substance, wherein a barrier is provided near an opening end of the container of the vapor deposition source. A vacuum vapor deposition device characterized in that 2. The vacuum vapor deposition apparatus according to claim 1, wherein the barrier is provided so as to be closed in its circumferential direction. 3. The vacuum vapor deposition apparatus according to claim 1 or 2, wherein the barrier has irregularities on its outer surface. 4. The vacuum vapor deposition apparatus according to claim 3, wherein the unevenness of the barrier is formed by fins. 5. The vacuum vapor deposition apparatus according to claim 1, further comprising cooling means for cooling the barrier. 6. The vacuum vapor deposition apparatus according to claim 1, wherein the barrier is formed so as to project toward the substrate. 7. The vacuum vapor deposition apparatus according to claim 1, wherein the barrier is detachably provided. 8. The vacuum vapor deposition apparatus according to claim 1, wherein a plurality of the vapor deposition sources are provided, and the barrier is provided near an opening end of each container of the vapor deposition sources. A vacuum vapor deposition device characterized in that