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JPH08334755A - Production of electrode substrate for liquid crystal display device and liquid crystal display device formed by using the same - Google Patents

Production of electrode substrate for liquid crystal display device and liquid crystal display device formed by using the same

Info

Publication number
JPH08334755A
JPH08334755A JP7141728A JP14172895A JPH08334755A JP H08334755 A JPH08334755 A JP H08334755A JP 7141728 A JP7141728 A JP 7141728A JP 14172895 A JP14172895 A JP 14172895A JP H08334755 A JPH08334755 A JP H08334755A
Authority
JP
Japan
Prior art keywords
electrode substrate
liquid crystal
display device
crystal display
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7141728A
Other languages
Japanese (ja)
Inventor
Noboru Mihashi
登 三橋
Hironobu Suda
廣伸 須田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toppan Inc
Original Assignee
Toppan Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toppan Printing Co Ltd filed Critical Toppan Printing Co Ltd
Priority to JP7141728A priority Critical patent/JPH08334755A/en
Publication of JPH08334755A publication Critical patent/JPH08334755A/en
Pending legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Optical Filters (AREA)

Abstract

PURPOSE: To make it possible to prevent the degradation in the yield of a thin-film transistor(TFT) substrate by the shape defect of color filters by forming color filter coloring layers having notches at ends in such a manner that drain electrodes are partly exposed. CONSTITUTION: Adhesives are applied on the TFT forming surface side of the electrode substrate 16 and thereafter, a transfer sheet having the color filters formed with the notches to expose part of the drain electrodes at the corner parts of the ends on a supporting sheet is stuck to the substrate in such a manner that the color filters and the TFT forming surface face each other. Next, the adhesives on the light transparent parts are photoset by irradiation with UV rays and thereafter, the supporting sheet is peeled, by which color filters are transferred and formed on the electrode substrate 16. Next, a transparent conductive film is formed over the entire surface of the TFT forming surface side after the removal of the unexposed and uncured adhesives and thereafter, this film is patterned to prescribed shapes, by which pixel electrodes 12 consisting of the transparent conductive films electrically connected to the drain electrode parts exposed from the notched parts of the color filters are formed.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、アクティブマトリクス
型液晶表示装置に用いられる電極基板の製造方法、およ
び、本発明の製造方法により製造された電極基板を用い
たアクティブマトリクス型液晶表示装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing an electrode substrate used in an active matrix type liquid crystal display device, and an active matrix type liquid crystal display device using the electrode substrate manufactured by the manufacturing method of the present invention.

【0002】[0002]

【従来の技術】アクティブマトリクス型液晶表示装置の
従来からの典型的な構造として、以下の構造のものが広
く採用されている。すなわち、図12に示すように、ガラ
ス等の透明基板8上に、薄膜トランジスタ15(以下、T
FT15と記す)、ダイオードおよびコンデンサー等より
なる素子、配線およびITO(Indium Tin Oxide)等の
透明導電膜からなる画素電極12等が形成され表面に配向
膜13を持つ薄膜トランジスタ電極基板Cと、ガラス等の
透明基板8’上に、前記の素子部および配線部等とを隠
蔽する遮光膜11、および着色層3からなるカラーフィル
ター等が形成され、透明導電膜からなる対向電極10およ
び配向膜13を持つ電極基板Dとを別々に作成する。しか
る後、カラーフィルターを形成した電極基板Dと薄膜ト
ランジスタ電極基板Cとを一定の距離を持つよう対向さ
せた上で、両電極基板の間に液晶19を充填、封止するよ
う張り合わせ、液晶表示装置20とする構造である。なお
図12は、従来の液晶表示装置の構造例を簡単に図示した
ものであり、説明の都合上、簡略化した図としている。
2. Description of the Related Art The following structure has been widely adopted as a typical structure of an active matrix type liquid crystal display device. That is, as shown in FIG. 12, a thin film transistor 15 (hereinafter, referred to as T
FT15), an element composed of a diode and a capacitor, a wiring, and a pixel electrode 12 composed of a transparent conductive film such as ITO (Indium Tin Oxide) and the like, and a thin film transistor electrode substrate C having an alignment film 13 on its surface, glass, etc. On the transparent substrate 8'of, a light-shielding film 11 for concealing the above-mentioned element part and wiring part, a color filter composed of the colored layer 3 and the like are formed, and a counter electrode 10 and an alignment film 13 composed of a transparent conductive film are formed. The electrode substrate D to have is separately prepared. Thereafter, the electrode substrate D on which the color filter is formed and the thin film transistor electrode substrate C are made to face each other with a certain distance, and the liquid crystal 19 is filled between the both electrode substrates and bonded so as to seal the liquid crystal display device. The structure is 20. Note that FIG. 12 simply shows a structural example of a conventional liquid crystal display device, and is a simplified diagram for convenience of explanation.

【0003】しかしながら、この従来からの構造では、
互いに対向する両電極基板の貼り合わせズレが発生する
ため、その貼り合わせ精度に相当する分だけ遮光膜11の
幅を大きく設計する必要があり、したがってカラーフィ
ルターの面積が小さくなり、画面全体に対する画素の占
有面積(開口率)が低下し、画面表示が暗くなるという
問題があった。また、上述した構造では、カラーフィル
タとなる着色層3と遮光膜11のオーバーラップ部位およ
びTFT15部位等が凸状となるため、その部位で配向膜
13に段差を生じていた。段差を持つ両電極基板を対向し
て貼り合わせると、ラビング処理の際に段差部で液晶分
子の配向性が不均一となる配向不良が生じ、それにより
表示不良となる等、カラー液晶表示の品位を大幅に劣化
させるという問題もあった。この問題を解決するため、
例えば特開平4-253028号公報にあるように、TFT等を
形成した、薄膜トランジスタ電極基板上にカラーフィル
ターを形成することで開口率を向上し、かつ、配向膜の
平滑化を行う方法が提案されていた。
However, in this conventional structure,
Since there is a misalignment between the two electrode substrates facing each other, it is necessary to design the width of the light-shielding film 11 to be larger by an amount corresponding to the bonding accuracy, and thus the area of the color filter becomes smaller and the pixel for the entire screen becomes smaller. However, there is a problem in that the area occupied by (aperture ratio) decreases and the screen display becomes dark. Further, in the above-described structure, since the overlapping portion of the colored layer 3 serving as a color filter and the light shielding film 11 and the TFT 15 portion have a convex shape, the alignment film is formed at that portion.
There was a step at 13. When both electrode substrates with steps are pasted together facing each other, the alignment of liquid crystal molecules becomes uneven at the step during the rubbing process, resulting in poor alignment, resulting in poor display. There was also a problem of significantly deteriorating. To solve this problem,
For example, as disclosed in Japanese Patent Laid-Open No. 4-253028, a method of improving the aperture ratio by forming a color filter on a thin film transistor electrode substrate on which a TFT or the like is formed and smoothing an alignment film is proposed. Was there.

【0004】[0004]

【発明が解決しようとする課題】前記提案の、薄膜トラ
ンジスタ電極基板上に直接カラーフィルターを形成する
方法では、赤(R)、緑(G)、青(B)の3色を3回
に分けて、回転塗布法またはロールコート法等によりカ
ラーフィルターをパターニングするため、工程数が多く
効率が悪いという問題がある。また、上記の塗布法で
は、形成されたカラーフィルターに、部分的に塗布膜厚
が異なる塗布ムラ、スジ状に塗布膜厚が異なるスジム
ラ、および、部分的にパターニングされない部位が出来
る白ムラ等の不良が発生し薄膜トランジスタ電極基板と
しての歩留まりが悪くなりやすく、せっかく形成した薄
膜トランジスタ電極基板が生かされない等の問題もあっ
た。本発明は、上記の問題を改善することを目的とす
る。
In the method of forming a color filter directly on the thin film transistor electrode substrate proposed above, the three colors of red (R), green (G) and blue (B) are divided into three times. Since the color filter is patterned by the spin coating method or the roll coating method, there is a problem that the number of steps is large and the efficiency is low. Further, in the above coating method, the formed color filter has coating unevenness in which the coating film thickness is partially different, uneven streaks in the coating film thickness are different, and white unevenness in which a partially unpatterned portion is formed. There is also a problem that a defect is likely to occur and the yield of the thin film transistor electrode substrate is deteriorated, and the thin film transistor electrode substrate formed with difficulty is not utilized. The present invention aims to remedy the above problems.

【0005】[0005]

【課題を解決するための手段】すなわち、本発明は、ア
クティブマトリクス型液晶表示装置用電極基板の製造方
法において、 透明基板上に少なくとも薄膜トランジスタからなる
素子、および、配線が形成された薄膜トランジスタ形成
電極基板の薄膜トランジスタ形成面側に、硬化した時点
で透明である非加熱紫外線硬化型接着剤を施し、 前記薄膜トランジスタのドレイン電極を一部露出さ
せる切り欠きを端部角部に形成されたカラーフィルター
を支持シート上に持つ転写シートを、前記カラーフィル
ターと薄膜トランジスタ形成面とを対向させて貼り合わ
せ、しかる後、前記電極基板の薄膜トランジスタ非形成
面側から紫外線を照射し、前記電極基板の光透過部上の
接着剤を光硬化させた後、支持シートを剥がすことで前
記電極基板上にカラーフィルターを転写形成し、 前記素子および配線上の未露光未硬化の接着剤を除
去した後、前記電極基板の薄膜トランジスタ形成面側全
面に透明導電膜を形成後、これを所定の形状にパターニ
ングし、カラーフィルターの前記切り欠き部より露出し
たドレイン電極部位と電気的に接続した、透明導電膜よ
りなる画素電極を形成し、 少なくとも前記薄膜トランジスタ領域および配線領
域を覆う遮光膜を所望の形状にて形成し、 前記薄膜トランジスタ形成電極基板の薄膜トランジ
スタ形成面側に保護膜を形成する、 上記〜の工程を具備することを特徴とするアクティ
ブマトリクス型液晶表示装置用電極基板の製造方法を提
供することで、上記の課題を解決したものである。
That is, the present invention provides a method of manufacturing an electrode substrate for an active matrix type liquid crystal display device, comprising: a thin film transistor forming electrode substrate having a thin film transistor and wiring formed on a transparent substrate. On the thin film transistor forming surface side, a non-heated ultraviolet curable adhesive that is transparent at the time of curing is applied, and a color filter formed with a notch at an edge corner to partially expose the drain electrode of the thin film transistor The transfer sheet having the above is attached so that the color filter and the thin film transistor forming surface are opposed to each other, and thereafter, ultraviolet rays are irradiated from the thin film transistor non-forming surface side of the electrode substrate to bond the light transmitting portion of the electrode substrate. After the agent is photocured, the support sheet is peeled off to cover the electrode substrate. -Transfer forming a filter, after removing the unexposed and uncured adhesive on the element and the wiring, after forming a transparent conductive film on the entire thin film transistor formation surface side of the electrode substrate, patterning it into a predetermined shape, A pixel electrode made of a transparent conductive film, which is electrically connected to the drain electrode portion exposed from the cutout portion of the color filter, is formed, and a light shielding film that covers at least the thin film transistor region and the wiring region is formed in a desired shape. Forming a protective film on the thin film transistor forming surface side of the thin film transistor forming electrode substrate, and providing a method for manufacturing an electrode substrate for an active matrix type liquid crystal display device, comprising: It is a solution to the problem.

【0006】以下に図面を用い、本発明の説明を行う。
本発明においては、液晶表示装置用電極基板を製造する
に際して、赤(R)、緑(G)、青(B)の3色よりな
るカラーフィルターを支持シート1上に形成した転写シ
ートを作成し、転写シート上の赤(R)、緑(G)、青
(B)の3色よりなるカラーフィルターを、薄膜トラン
ジスタ等を形成した電極基板上に転写するものである。
The present invention will be described below with reference to the drawings.
In the present invention, when manufacturing an electrode substrate for a liquid crystal display device, a transfer sheet in which a color filter composed of three colors of red (R), green (G) and blue (B) is formed on a support sheet 1 is prepared. , A color filter of three colors of red (R), green (G), and blue (B) on a transfer sheet is transferred onto an electrode substrate on which a thin film transistor or the like is formed.

【0007】そのため、まず、図1の例に示すように、
支持シート1上に剥離層2を介して赤(R)、緑
(G)、青(B)の3色よりなるカラーフィルター着色
層3を形成した転写シート18を作成しておく。なお、図
10の平面図に示すように、カラーフィルター着色層3
は、薄膜トランジスタ等を形成した電極基板上に転写さ
れた際、TFTのドレイン電極5を一部露出するよう、
端部に切り欠き17を持つように形成しているものであ
り、以下に示す説明図は、図10中のX−X線上の断面を
記したものである。なお、切り欠き17の位置および大き
さは、図10のそれに限定されるものでなく、液晶表示装
置用電極基板の仕様により適宜設定することが望ましい
といえる。また、支持シート1の材質として、42合金
(鉄−ニッケル合金)もしくは鋼材(アルミキルド材)
等を用いることが本願出願人より提案されているもので
ある。
Therefore, first, as shown in the example of FIG.
A transfer sheet 18 in which a color filter coloring layer 3 of three colors of red (R), green (G), and blue (B) is formed on the support sheet 1 via the release layer 2 is prepared. Note that the figure
As shown in the plan view of 10, the color filter coloring layer 3
To expose the drain electrode 5 of the TFT partially when transferred onto an electrode substrate on which a thin film transistor or the like is formed.
It is formed so as to have a notch 17 at its end, and the explanatory view shown below shows a cross section taken along line XX in FIG. 10. It should be noted that the position and size of the notch 17 are not limited to those shown in FIG. 10, and it can be said that it is desirable to set them appropriately according to the specifications of the electrode substrate for a liquid crystal display device. Further, as the material of the support sheet 1, 42 alloy (iron-nickel alloy) or steel material (aluminum killed material)
It has been proposed by the applicant of the present application to use the above.

【0008】一方、図2の例に示すように、例えばガラ
ス基板等の透明基板8上に、公知の方法によりソース電
極4、ドレイン電極5およびゲート電極6等よりなるT
FT15およびコンデンサー等よりなる素子と配線からな
るTFT回路を形成した基板(以下、TFT形成電極基
板16と記す)を得る。図2中、開口部7領域は後述する
ようにカラーフィルターが形成され赤(R)、緑
(G)、青(B)の画素となる部位であり、光透過部と
なっている。
On the other hand, as shown in the example of FIG. 2, a T made up of a source electrode 4, a drain electrode 5, a gate electrode 6 and the like is formed on a transparent substrate 8 such as a glass substrate by a known method.
A substrate (hereinafter referred to as a TFT forming electrode substrate 16) on which a TFT circuit including an element made of FT15 and a capacitor and a wiring is formed is obtained. In FIG. 2, the area of the opening 7 is a portion that becomes a pixel of red (R), green (G), and blue (B) by forming a color filter as described later, and is a light transmitting portion.

【0009】次いで、図3に示すように、TFT形成電
極基板16のTFT15が形成された面と、転写シート18の
着色層3が形成された面とを対向させ、転写シート18の
位置を制御しながらTFT形成電極基板16に重ね合わせ
る。その際、図3に示すように、TFT形成電極基板16
と転写シート18の間に、硬化した時点で透明である非加
熱紫外線硬化型接着剤層9を形成するものである。
Next, as shown in FIG. 3, the surface of the TFT forming electrode substrate 16 on which the TFT 15 is formed and the surface of the transfer sheet 18 on which the colored layer 3 is formed are opposed to each other to control the position of the transfer sheet 18. While superposing it on the TFT forming electrode substrate 16. At that time, as shown in FIG.
The non-heated ultraviolet-curable adhesive layer 9 that is transparent when cured is formed between the transfer sheet 18 and the transfer sheet 18.

【0010】なお、重ね合わせの際、接着剤層9に、気
泡等の異物を発生させないようにすることが望ましい。
そのため、本発明者らは、例えば、後述する実施例に記
したように、ロールプレスを用いTFT形成電極基板16
と転写シート18との重ね合わせを行った。すなわち、図
13に示すように、TFT形成電極基板16のTFT15形成
面に液状の接着剤21を滴下後、転写シート18を位置合わ
せを行いつつTFT形成電極基板16に重ね合わせ、同時
にロールプレス22等にて圧力を掛けることで滴下した接
着剤21を押し広げつつ、かつ、余分な接着剤および気泡
を押し出しながら、両者の重ね合わせを行うものであ
る。
It should be noted that it is desirable that foreign matters such as bubbles are not generated in the adhesive layer 9 during the superposition.
Therefore, the inventors of the present invention, for example, use a roll press to form the TFT forming electrode substrate 16 as described in Examples described later.
And the transfer sheet 18 were superposed. That is, the figure
As shown in 13, after the liquid adhesive 21 is dropped on the surface of the TFT forming electrode substrate 16 on which the TFT 15 is formed, the transfer sheet 18 is aligned and superposed on the TFT forming electrode substrate 16, and at the same time, by a roll press 22 or the like. By applying pressure, the dropped adhesive 21 is spread and the excess adhesive and air bubbles are pushed out, and the two are superposed.

【0011】次いで、図4に示すように、TFT形成電
極基板16のTFT非形成面側から紫外線を照射して開口
部7の接着剤層9’を光硬化させる。これにより、着色
層3は、TFT形成電極基板16に接着される。なお、素
子および配線等の上に乗っている接着剤層9部位は、素
子および配線等が照射された紫外線を遮光するため、未
露光となり光硬化しない。
Next, as shown in FIG. 4, ultraviolet rays are irradiated from the TFT non-forming surface side of the TFT forming electrode substrate 16 to photo-cure the adhesive layer 9'of the opening 7. As a result, the colored layer 3 is bonded to the TFT forming electrode substrate 16. The portion of the adhesive layer 9 on the elements, wirings and the like shields the ultraviolet rays applied to the elements, wirings and the like, so that it is unexposed and is not photocured.

【0012】次いで図5に示すように、剥離層2と共に
支持シート1を剥離することで、TFT形成電極基板16
上にカラーフィルター着色層3を形成したのち、図6に
示すように素子および配線等の上の未露光未硬化の接着
剤層9をアルカリ液等で洗浄して洗い流す。
Next, as shown in FIG. 5, the support sheet 1 is peeled off together with the peeling layer 2 to form the TFT forming electrode substrate 16
After the color filter colored layer 3 is formed thereon, as shown in FIG. 6, the unexposed and uncured adhesive layer 9 on the elements, wirings and the like is washed and washed with an alkaline solution or the like.

【0013】次いで、TFT形成電極基板16のTFT形
成面側に透明導電膜、例えばITO膜を全面に形成した
後、フォトリソグラフィ法等を用いITO膜をエッチン
グして、図7のように所定の形状にパターニングされた
ITOよりなる透明な画素電極12を得る。なお、画素電
極12とTFTのドレイン電極5とは、図10で示した着色
層3の切り欠き17部にて電気的接続が成されているもの
である。
Next, a transparent conductive film, for example, an ITO film is formed on the entire surface of the TFT forming electrode substrate 16 on which the TFT is formed, and then the ITO film is etched by a photolithography method or the like to give a predetermined pattern as shown in FIG. A transparent pixel electrode 12 made of ITO patterned in a shape is obtained. The pixel electrode 12 and the drain electrode 5 of the TFT are electrically connected to each other at the notch 17 of the colored layer 3 shown in FIG.

【0014】次いで、フォトリソグラフィ法等を用い、
図8のように少なくとも素子と配線とを覆う遮光膜11を
所望の形状に形成する。なお、遮光膜11の役目として、
TFT等の素子に光が入射することを防止するととも
に、各画素の輪郭をはっきりとし、コントラストを向上
させる役目を持つものである。このため、遮光膜11は図
8に示すように各画素部、すなわち、各着色層3の端辺
領域にオーバーラップを持つよう形成することが望まし
いといえる。
Next, using a photolithography method,
As shown in FIG. 8, a light shielding film 11 that covers at least the element and the wiring is formed in a desired shape. In addition, as the role of the light shielding film 11,
It has a role of preventing light from entering a device such as a TFT, making the contour of each pixel clear and improving the contrast. Therefore, it can be said that it is desirable that the light-shielding film 11 is formed so as to have an overlap in each pixel portion, that is, in the edge region of each colored layer 3, as shown in FIG.

【0015】また、遮光膜11は、画素電極12表面とで段
差が生じぬよう、遮光性を損なわない範囲で適宜膜厚を
調整し、遮光膜11表面と画素電極12表面とで表面平滑な
面を得るようにすることが望ましい。また、遮光膜11は
隣接する画素電極12同志の電気的短絡を防止するため、
顔料を含有させたことで遮光性を持たせた、非導電性の
感光性樹脂等を用いることが望ましいといえる。
Further, the light-shielding film 11 is appropriately adjusted in thickness so as not to cause a step difference between the surface of the pixel electrode 12 and the surface of the pixel electrode 12, and the surface of the light-shielding film 11 and the surface of the pixel electrode 12 is smooth. It is desirable to get a face. Further, the light-shielding film 11 prevents an electrical short circuit between the adjacent pixel electrodes 12,
It can be said that it is desirable to use a non-conductive photosensitive resin or the like having a light-shielding property by containing a pigment.

【0016】次いで、図9に示すように、TFT15を湿
気等から保護するために、TFT形成電極基板16表面に
保護膜14を形成し、カラーフィルターを有するアクティ
ブマトリクス型液晶表示装置用電極基板を得るものであ
る。
Next, as shown in FIG. 9, in order to protect the TFT 15 from moisture and the like, a protective film 14 is formed on the surface of the TFT forming electrode substrate 16 to form an electrode substrate for an active matrix type liquid crystal display device having a color filter. I will get it.

【0017】次いで、上述した、本発明により製造され
たアクティブマトリクス型液晶表示装置用電極基板を用
い、図11に示すアクティブマトリクス型液晶表示装置を
得るものである。すなわち、透明基板8’上に、ITO
等の透明導電膜よりなる対向電極10および配向膜13等を
形成した電極基板Aと、上述した本発明により製造さ
れ、配向膜13を形成したアクティブマトリクス型液晶表
示装置用電極基板Bとを、一定の距離を持つよう対向さ
せた上で、両電極基板の間に液晶19を充填、封止するよ
う張り合わせ、アクティブマトリクス型液晶表示装置20
とするものである。なお、図11は本発明による液晶表示
装置の構造例を、簡単に図示したものであり、説明の都
合上、簡略化した図としている。
Next, the active matrix type liquid crystal display device shown in FIG. 11 is obtained by using the above-mentioned electrode substrate for an active matrix type liquid crystal display device manufactured according to the present invention. That is, ITO is formed on the transparent substrate 8 '.
An electrode substrate A having a counter electrode 10 and an alignment film 13 formed of a transparent conductive film such as the above, and an electrode substrate B for an active matrix type liquid crystal display device having the alignment film 13 manufactured by the present invention described above, The liquid crystal 19 is filled between the electrode substrates so that they are opposed to each other with a certain distance therebetween, and the liquid crystal 19 is pasted so as to seal the active matrix type liquid crystal display device 20.
It is assumed that. It should be noted that FIG. 11 simply shows a structural example of the liquid crystal display device according to the present invention, and is a simplified diagram for convenience of explanation.

【0018】[0018]

【作用】本発明によれば、予め作成した転写シートから
カラーフィルターをTFT形成電極基板上に転写し形成
するため、従来法で生じていた問題、すなわち、着色層
3の各色を順にTFT形成電極基板上に直接形成する
際、カラーフィルターの形成不良を生じTFT基板の歩
留まりが低下するという問題を防止できる。また、転写
シートにより一括してTFT形成電極基板へカラーフィ
ルターを形成する方式は、従来法に比べ工程が少なくて
すみ、生産効率を向上できるといえる。
According to the present invention, since the color filter is transferred and formed on the TFT forming electrode substrate from the transfer sheet prepared in advance, the problem that has occurred in the conventional method, that is, each color of the colored layer 3 is sequentially formed on the TFT forming electrode. It is possible to prevent the problem that the yield of the TFT substrate is reduced due to defective formation of the color filter when the TFT is directly formed on the substrate. Further, the method of collectively forming the color filters on the TFT-forming electrode substrate by the transfer sheet requires less steps than the conventional method, and thus it can be said that the production efficiency can be improved.

【0019】また、本発明により製造されたTFT形成
電極基板は、遮光膜表面と画素電極表面とでほぼ表面平
滑な面を得られるため、TFT形成電極基板上に形成さ
れる配向膜面も平坦化が可能となる。このため、本発明
により製造されたアクティブマトリクス型液晶表示装置
用電極基板を用い、液晶表示装置を構成する際、液晶分
子を一様に配向させるためのラビング処理が確実に行わ
れ液晶の配向不良を防止でき、表示品質の良い液晶表示
装置を得られる。
In addition, since the TFT forming electrode substrate manufactured according to the present invention can have a substantially smooth surface between the light shielding film surface and the pixel electrode surface, the alignment film surface formed on the TFT forming electrode substrate is also flat. Can be realized. Therefore, when an active matrix type liquid crystal display device electrode substrate manufactured according to the present invention is used to form a liquid crystal display device, a rubbing process for uniformly orienting liquid crystal molecules is surely performed, resulting in poor liquid crystal alignment. And a liquid crystal display device with good display quality can be obtained.

【0020】[0020]

【実施例】以下に、本発明のアクティブマトリクス型液
晶表示装置用電極基板の製造方法の実施例を示し、さら
に説明を行う。 <実施例>図1は、本発明に用いる転写シート18の例を
示している。支持シート1上に、例えば光硬化ポリビニ
ルアルコールからなる剥離層2が形成され、この剥離層
2の上に3色の着色層3R、3G、3B(以下、単に着
色層3という)が互いに隣り合うように平面的に配列さ
れてなるカラーフィルター層が形成されている。
EXAMPLE An example of a method of manufacturing an electrode substrate for an active matrix type liquid crystal display device according to the present invention will be shown and further described below. <Example> FIG. 1 shows an example of a transfer sheet 18 used in the present invention. A release layer 2 made of, for example, photocurable polyvinyl alcohol is formed on the support sheet 1, and three colored layers 3R, 3G, and 3B (hereinafter, simply referred to as the colored layer 3) are adjacent to each other on the release layer 2. Thus, the color filter layer formed in a plane is formed.

【0021】支持シート1は、42合金(鉄−ニッケル合
金、ニッケル42重量%、残部鉄)を使用し、厚さは 110
μmとした。なお、この支持シート1には、各着色層3
R、3G、3Bの形成の際の位置合わせ、および、着色
層3とTFT形成電極基板16との間の位置合わせのため
のアライメントマークを付与することが望ましいため、
着色層3の形成に先だって、剥離層2を形成する前の支
持シート1の所定の部位にアライメントマークを、フォ
トリソグラフィー法またはレーザー光などによって形成
した。
The supporting sheet 1 uses 42 alloy (iron-nickel alloy, nickel 42% by weight, balance iron) and has a thickness of 110.
μm. In addition, each colored layer 3 is provided on the support sheet 1.
Since it is desirable to provide alignment marks for alignment during formation of R, 3G, and 3B, and alignment between the colored layer 3 and the TFT forming electrode substrate 16.
Prior to the formation of the colored layer 3, an alignment mark was formed on a predetermined portion of the support sheet 1 before forming the release layer 2 by a photolithography method or laser light.

【0022】支持シート1によく接着し、かつ、着色層
3との剥離性が良好である光硬化ポリビニルアルコール
からなる剥離層2の厚さを10μm程度とし、表面の平滑
度は0.1μm程度とした。なお剥離層2は、ポリビニル
アルコールに、例えば重クロム酸塩、クロム酸塩、また
はジアゾ化合物など光架橋剤を加えた混合物を支持シー
ト1上に平坦に塗布し、加熱しながら紫外線を照射して
硬化させることで形成した。
The thickness of the release layer 2 made of photocurable polyvinyl alcohol, which adheres well to the support sheet 1 and has good releasability from the colored layer 3, is about 10 μm, and the surface smoothness is about 0.1 μm. did. The release layer 2 is formed by applying a mixture of polyvinyl alcohol and a photocrosslinking agent such as dichromate, chromate, or diazo compound evenly on the support sheet 1 and irradiating it with ultraviolet rays while heating. It was formed by curing.

【0023】この硬化した剥離層2の上に着色層3を、
公知のフォトリソグラフィー法を用いた顔料分散法によ
り形成した。なお、着色層3は、図10に示すように、後
述するTFT形成電極基板16への転写の際、TFT15を
構成するドレイン電極5を露出するよう端部角部に切り
欠き17を持つよう形成した。また、この着色層3の形成
方法としては、従来から知られているフォトリソグラフ
ィー法、印刷法、電着法など、いずれも採用できるもの
であり、フォトリソグラフィー法としては、顔料分散法
の他に染色法も可能である。なお、着色層3は、支持シ
ート1から見て、逆テーパー状に仕上げれば、TFT形
成電極基板16に転写した際、TFT形成電極基板16に対
して順テーパーとなり、後述する画素電極12の形成の
際、画素電極12の断線を防止することが出来るので望ま
しいといえる。
A colored layer 3 is formed on the cured release layer 2.
It was formed by a pigment dispersion method using a known photolithography method. As shown in FIG. 10, the colored layer 3 is formed to have a notch 17 at an end corner so as to expose the drain electrode 5 constituting the TFT 15 at the time of transfer to a TFT forming electrode substrate 16 described later. did. Further, as a method for forming the colored layer 3, any of conventionally known photolithography method, printing method, electrodeposition method and the like can be adopted. As the photolithography method, in addition to the pigment dispersion method, A dyeing method is also possible. If the colored layer 3 is formed into an inverse taper shape when viewed from the supporting sheet 1, it becomes a forward taper with respect to the TFT forming electrode substrate 16 when transferred to the TFT forming electrode substrate 16, and the pixel electrode 12 to be described later is formed. It can be said that it is desirable because it can prevent disconnection of the pixel electrode 12 during formation.

【0024】以上のようにして作成された転写シート18
を用いて、TFT形成電極基板16にカラーフィルターを
形成する方法を以下に述べる。図2に示すように、公知
の方法によりガラスよりなる透明基板8上に、TFT15
およびコンデンサー等よりなる素子および配線を形成
し、TFT形成電極基板16を得た。
The transfer sheet 18 created as described above
A method of forming a color filter on the TFT forming electrode substrate 16 by using will be described below. As shown in FIG. 2, the TFT 15 is formed on the transparent substrate 8 made of glass by a known method.
Then, an element and wiring made of a capacitor and the like were formed to obtain a TFT forming electrode substrate 16.

【0025】次いで、図3に示すように、TFT形成電
極基板16のTFT15が形成された面と、転写シート18の
着色層3が形成された面とを対向させ、転写シート18の
位置を制御しながらTFT形成電極基板16に重ね合わせ
た。このとき、図3に示すように、TFT形成電極基板
16と転写シート18の間に、硬化した時点で透明である非
加熱紫外線硬化型接着剤層9を形成した。
Then, as shown in FIG. 3, the surface of the TFT forming electrode substrate 16 on which the TFT 15 is formed and the surface of the transfer sheet 18 on which the colored layer 3 is formed are opposed to each other to control the position of the transfer sheet 18. On the other hand, it was superposed on the TFT forming electrode substrate 16. At this time, as shown in FIG.
An unheated UV-curable adhesive layer 9 that was transparent at the time of curing was formed between 16 and the transfer sheet 18.

【0026】その際、図13に示すように、TFT形成電
極基板16のTFT15形成面に、例えばアクリレート系の
透明な紫外線硬化型樹脂を接着剤21として滴下後、転写
シート18を、位置合わせを行いつつ、ロールプレス22に
て5kg/cm2 の圧力でTFT形成電極基板16に重ね合わ
せた。
At this time, as shown in FIG. 13, for example, a transparent UV-curable acrylate resin is dropped as an adhesive 21 on the surface of the TFT forming electrode substrate 16 on which the TFT 15 is formed, and then the transfer sheet 18 is aligned. While doing so, it was superposed on the TFT-forming electrode substrate 16 with a roll press 22 at a pressure of 5 kg / cm 2 .

【0027】次いで、図4に示すように、TFT非形成
面側から紫外線を照射して、素子および配線部等を除い
た開口部7部位の接着剤を光硬化させ、TFT形成電極
基板16に着色層3の接着を行った。この時、前述したよ
うに、素子および配線上に乗っている接着剤層9部位
は、TFT15および配線等が照射された紫外線を遮光す
るため、未露光となり光硬化しない。
Next, as shown in FIG. 4, ultraviolet rays are radiated from the TFT non-forming surface side to photo-cure the adhesive in the opening 7 portion excluding the element and the wiring portion, and the TFT forming electrode substrate 16 is formed. The colored layer 3 was adhered. At this time, as described above, the portion of the adhesive layer 9 on the element and the wiring shields the ultraviolet rays applied to the TFT 15 and the wiring, so that it is not exposed and does not photo-cur.

【0028】次いで、図5に示すように、剥離層2を持
つ支持シート1を取り除いた後、開口部7部位の接着剤
層9’が硬化したTFT形成電極基板16をアルカリ液等
で洗浄し、未露光未硬化の接着剤を除去した。これによ
り、図6に示すように、素子および配線上の未露光未硬
化の接着剤層9が洗浄除去され、TFT15および配線等
の表面が現われる。
Next, as shown in FIG. 5, after removing the support sheet 1 having the release layer 2, the TFT forming electrode substrate 16 having the adhesive layer 9'at the opening 7 site cured is washed with an alkaline solution or the like. The unexposed uncured adhesive was removed. As a result, as shown in FIG. 6, the unexposed and uncured adhesive layer 9 on the element and the wiring is washed away, and the surfaces of the TFT 15 and the wiring appear.

【0029】次いで、スパッタ等によりITO膜を、T
FT形成電極基板16のTFT形成面側全面に蒸着形成
し、これをフォトリソグラフィー法等を用いエッチング
した。これにより、図7に示すように、所定の形状にパ
ターニングされた画素電極12を、カラーフィルター(着
色層3)上に作成した。なお、画素電極12は、前述した
着色層3の切り欠き17領域にて、ドレイン電極5と電気
的接続がなされた。
Next, the ITO film is sputtered and the T film is removed.
It was vapor-deposited and formed on the entire surface of the FT forming electrode substrate 16 on the side where the TFT was formed, and this was etched by using a photolithography method or the like. Thus, as shown in FIG. 7, the pixel electrode 12 patterned into a predetermined shape was formed on the color filter (coloring layer 3). The pixel electrode 12 was electrically connected to the drain electrode 5 in the cutout 17 region of the colored layer 3 described above.

【0030】次いで図8に示すように遮光膜11を、適切
な厚さにて素子および配線等を覆うよう、所望の形状に
形成した。なお遮光膜11は、前述したように、非導電性
の感光性樹脂を用い、フォトリソグラフィー法等を用い
所定の部位に形成したものであり、樹脂中にレッド、ブ
ルー、イエロー、バイオレット等の顔料を適宜加えたこ
とで遮光性を持たせたものである。また、遮光膜11は、
画素電極12表面との段差が生じぬよう、遮光性を損なわ
ない範囲で適宜膜厚を調整し、遮光膜11表面と画素電極
12表面とで平滑な面を得た。
Then, as shown in FIG. 8, a light-shielding film 11 was formed in a desired shape so as to cover the elements and wirings with an appropriate thickness. As described above, the light-shielding film 11 is made of a non-conductive photosensitive resin and is formed at a predetermined site by a photolithography method or the like, and pigments such as red, blue, yellow, and violet in the resin. The light-shielding property is imparted by appropriately adding. In addition, the light shielding film 11 is
The film thickness is appropriately adjusted within a range that does not impair the light shielding property so that a step with the surface of the pixel electrode 12 does not occur, and the surface of the light shielding film 11 and the pixel electrode
A smooth surface was obtained with 12 surfaces.

【0031】次いで、図9に示すように、TFT形成電
極基板16のTFT形成面側に保護膜14を形成し、アクテ
ィブマトリクス型液晶表示装置用電極基板を得た。
Next, as shown in FIG. 9, a protective film 14 was formed on the TFT formation surface side of the TFT formation electrode substrate 16 to obtain an active matrix type liquid crystal display electrode substrate.

【0032】以上の、本発明の製造方法で得られたアク
ティブマトリクス型液晶表示装置用電極基板の表面は、
ほぼ平滑になり、図11に示すように、アクティブマトリ
クス型液晶表示装置用電極基板上に形成した配向膜13も
平坦に形成することができた。なお、本発明の形態は、
上記実施例に限定されるものではなく、使用する材質、
膜厚、カラーフィルターの色、TFTの構造等種々の条
件を変更できることは言う迄もない。
The surface of the electrode substrate for an active matrix type liquid crystal display device obtained by the above-described manufacturing method of the present invention is
It became almost smooth, and as shown in FIG. 11, the alignment film 13 formed on the electrode substrate for the active matrix type liquid crystal display device could also be formed flat. The form of the present invention is
The material used is not limited to the above embodiment,
It goes without saying that various conditions such as the film thickness, the color of the color filter, and the structure of the TFT can be changed.

【0033】[0033]

【発明の効果】本発明によれば、予め作成した転写シー
トからカラーフィルターをTFT形成電極基板上に転写
し形成するため、従来法で生じていた問題、すなわち、
着色層3の各色を順にTFT形成電極基板上に直接形成
する際、カラーフィルターの形成不良を生じTFT基板
の歩留まりが低下するという問題を防止できる。また、
転写シートにより一括してTFT形成電極基板へカラー
フィルターを形成する方式は、従来法に比べ工程が少な
くてすみ、生産効率を向上できるといえる。
According to the present invention, since the color filter is transferred and formed on the TFT forming electrode substrate from the transfer sheet prepared in advance, the problems that have occurred in the conventional method, namely,
When each color of the colored layer 3 is sequentially formed directly on the TFT forming electrode substrate, it is possible to prevent a problem that a defective color filter is formed and the yield of the TFT substrate is lowered. Also,
It can be said that the method of collectively forming the color filters on the TFT-forming electrode substrate by the transfer sheet requires fewer steps than the conventional method and can improve the production efficiency.

【0034】また、本発明により製造されたアクティブ
マトリクス型液晶表示装置用電極基板は、遮光膜表面と
画素電極表面とでほぼ表面平滑な面を得られるため、ア
クティブマトリクス型液晶表示装置用電極基板上に形成
される配向膜面も平坦化が可能となる。このため、本発
明により製造されたアクティブマトリクス型液晶表示装
置用電極基板を用い、アクティブマトリクス型液晶表示
装置を構成する際、液晶分子を一様に配向させるための
ラビング処理が確実に行われ液晶の配向不良を防止で
き、表示品質の良い液晶表示装置を得られる。次いで、
本発明では、遮光膜をTFT形成電極基板上に直接形成
しており、従来のように、別々に製造した電極基板同士
を対向させて重ね合わせる際に生じるズレ等を考慮し、
遮光膜領域を無闇に大きくする必要が無くなるといえ
る。このため、遮光膜領域を必要最小限の領域のみに形
成すれば良いといえ、画素の開口率(表示面積)を大き
くでき、明るくコントラストの高い液晶表示装置を得ら
れる等、本発明は、実用上優れているといえる。
The electrode substrate for an active matrix type liquid crystal display device manufactured according to the present invention has a substantially smooth surface between the light shielding film surface and the pixel electrode surface. The orientation film surface formed above can be flattened. Therefore, when the active matrix type liquid crystal display device is constructed using the electrode substrate for the active matrix type liquid crystal display device manufactured by the present invention, the rubbing treatment for uniformly aligning the liquid crystal molecules is surely performed. It is possible to obtain a liquid crystal display device with good display quality, which can prevent the alignment failure of the above. Then
In the present invention, the light-shielding film is formed directly on the TFT-formed electrode substrate, and as in the conventional case, in consideration of a deviation or the like that occurs when the separately manufactured electrode substrates are opposed to each other and overlapped,
It can be said that there is no need to unnecessarily increase the size of the light shielding film region. Therefore, it can be said that the light-shielding film region may be formed only in the minimum necessary region, and the aperture ratio (display area) of the pixel can be increased, and a bright and high-contrast liquid crystal display device can be obtained. It can be said that it is superior.

【0035】[0035]

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明に用いる転写シートの一実施例を示す断
面説明図。
FIG. 1 is a sectional explanatory view showing an embodiment of a transfer sheet used in the present invention.

【図2】本発明の液晶表示装置用電極基板の製造方法の
一実施例を工程順に示す説明図。
FIG. 2 is an explanatory view showing an embodiment of a method of manufacturing an electrode substrate for a liquid crystal display device of the present invention in the order of steps.

【図3】本発明の液晶表示装置用電極基板の製造方法の
一実施例を工程順に示す説明図。
FIG. 3 is an explanatory view showing one embodiment of a method for manufacturing an electrode substrate for a liquid crystal display device of the present invention in the order of steps.

【図4】本発明の液晶表示装置用電極基板の製造方法の
一実施例を工程順に示す説明図。
FIG. 4 is an explanatory view showing one embodiment of a method for manufacturing an electrode substrate for a liquid crystal display device of the present invention in the order of steps.

【図5】本発明の液晶表示装置用電極基板の製造方法の
一実施例を工程順に示す説明図。
FIG. 5 is an explanatory view showing one embodiment of a method for manufacturing an electrode substrate for a liquid crystal display device of the present invention in the order of steps.

【図6】本発明の液晶表示装置用電極基板の製造方法の
一実施例を工程順に示す説明図。
FIG. 6 is an explanatory view showing one embodiment of a method for manufacturing an electrode substrate for a liquid crystal display device of the present invention in the order of steps.

【図7】本発明の液晶表示装置用電極基板の製造方法の
一実施例を工程順に示す説明図。
FIG. 7 is an explanatory view showing one embodiment of a method for manufacturing an electrode substrate for a liquid crystal display device of the present invention in the order of steps.

【図8】本発明の液晶表示装置用電極基板の製造方法の
一実施例を工程順に示す説明図。
FIG. 8 is an explanatory view showing one embodiment of a method for manufacturing an electrode substrate for a liquid crystal display device of the present invention in the order of steps.

【図9】本発明の液晶表示装置用電極基板の製造方法の
一実施例を工程順に示す説明図。
FIG. 9 is an explanatory view showing one embodiment of a method for manufacturing an electrode substrate for a liquid crystal display device of the present invention in the order of steps.

【図10】本発明におけるドレイン電極と着色層の重な
りの一例を示す一部拡大平面図。
FIG. 10 is a partially enlarged plan view showing an example of the overlap between the drain electrode and the colored layer in the present invention.

【図11】本発明により製造された液晶表示装置用電極
基板を用いた液晶表示装置の構成例を示す断面説明図。
FIG. 11 is an explanatory cross-sectional view showing a configuration example of a liquid crystal display device using the electrode substrate for a liquid crystal display device manufactured according to the present invention.

【図12】従来の液晶表示装置の構成例を示す断面説明
図。
FIG. 12 is an explanatory cross-sectional view showing a configuration example of a conventional liquid crystal display device.

【図13】転写シートとTFT形成電極基板との重ね合
わせの一例を示す断面説明図。
FIG. 13 is a cross-sectional explanatory view showing an example of superposition of a transfer sheet and a TFT forming electrode substrate.

【符号の説明】[Explanation of symbols]

1 支持シート 2 剥離層 3 着色層 4 ソース電極 5 ドレイン電極 6 ゲート電極 7 開口部 8 透明基板 9 接着剤層 10 対向電極 11 遮光膜 12 画素電極 13 配向膜 14 保護膜 15 TFT 16 TFT形成電極基板 17 切り欠き 18 転写シート 19 液晶 20 液晶表示装置 21 接着剤 22 ロールプレス 1 Support Sheet 2 Release Layer 3 Colored Layer 4 Source Electrode 5 Drain Electrode 6 Gate Electrode 7 Opening 8 Transparent Substrate 9 Adhesive Layer 10 Counter Electrode 11 Light-shielding Film 12 Pixel Electrode 13 Alignment Film 14 Protective Film 15 TFT 16 TFT Forming Electrode Substrate 17 Notch 18 Transfer sheet 19 Liquid crystal 20 Liquid crystal display device 21 Adhesive 22 Roll press

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 透明基板上に少なくとも薄膜トランジ
スタからなる素子、および、配線が形成された薄膜トラ
ンジスタ形成電極基板の薄膜トランジスタ形成面側に、
硬化した時点で透明である非加熱紫外線硬化型接着剤を
施し、 前記薄膜トランジスタのドレイン電極を一部露出さ
せる切り欠きを端部角部に形成されたカラーフィルター
を支持シート上に持つ転写シートを、前記カラーフィル
ターと薄膜トランジスタ形成面とを対向させて貼り合わ
せ、しかる後、前記電極基板の薄膜トランジスタ非形成
面側から紫外線を照射し、前記電極基板の光透過部上の
接着剤を光硬化させた後、支持シートを剥がすことで前
記電極基板上にカラーフィルターを転写形成し、 前記素子および配線上の未露光未硬化の接着剤を除
去した後、前記電極基板の薄膜トランジスタ形成面側全
面に透明導電膜を形成後、これを所定の形状にパターニ
ングし、カラーフィルターの前記切り欠き部より露出し
たドレイン電極部位と電気的に接続した、透明導電膜よ
りなる画素電極を形成し、 少なくとも前記薄膜トランジスタ領域および配線領
域を覆う遮光膜を所望の形状にて形成し、 前記薄膜トランジスタ形成電極基板の薄膜トランジ
スタ形成面側に保護膜を形成する、 上記〜の工程を具備することを特徴とするアクティ
ブマトリクス型液晶表示装置用電極基板の製造方法。
1. An element comprising at least a thin film transistor on a transparent substrate, and a thin film transistor forming electrode substrate on which wirings are formed, on a thin film transistor forming surface side,
A non-heated UV-curable adhesive that is transparent at the time of curing is applied, and a transfer sheet having a color filter formed on a support sheet with a notch that partially exposes the drain electrode of the thin film transistor on a support sheet, The color filter and the thin film transistor forming surface are made to face each other and bonded together, and then ultraviolet rays are irradiated from the thin film transistor non-forming surface side of the electrode substrate, and the adhesive on the light transmitting portion of the electrode substrate is photocured. , A color filter is transferred and formed on the electrode substrate by peeling the supporting sheet, and the unexposed and uncured adhesive on the element and the wiring is removed, and then a transparent conductive film is formed on the entire thin film transistor formation surface side of the electrode substrate. After forming the pattern, this is patterned into a predetermined shape, and the drain electrode portion exposed from the cutout portion of the color filter and the electrode are exposed. Electrically connected, a pixel electrode made of a transparent conductive film is formed, a light-shielding film covering at least the thin film transistor region and the wiring region is formed in a desired shape, and a protective film is formed on the thin film transistor forming surface side of the thin film transistor forming electrode substrate. A method of manufacturing an electrode substrate for an active matrix type liquid crystal display device, which comprises the steps 1 to 3 of forming.
【請求項2】遮光膜を、顔料を含有する非導電性樹脂に
て形成することを特徴とする請求項1記載のアクティブ
マトリクス型液晶表示装置用電極基板の製造方法。
2. The method of manufacturing an electrode substrate for an active matrix type liquid crystal display device according to claim 1, wherein the light shielding film is formed of a non-conductive resin containing a pigment.
【請求項3】請求項1または2記載の製造方法によって
作成されたアクティブマトリクス型液晶表示装置用電極
基板と、前記電極基板に対向し、表面に透明導電膜より
なる対向電極を有する透明基板よりなる電極基板と、前
記両基板の間に充填、封止される液晶とを少なくとも有
することを特徴とするアクティブマトリクス型液晶表示
装置。
3. A transparent substrate having an electrode substrate for an active matrix type liquid crystal display device manufactured by the manufacturing method according to claim 1 or 2, and a counter electrode facing the electrode substrate and having a counter electrode made of a transparent conductive film on the surface thereof. An active matrix liquid crystal display device comprising at least an electrode substrate and a liquid crystal filled and sealed between the two substrates.
JP7141728A 1995-06-08 1995-06-08 Production of electrode substrate for liquid crystal display device and liquid crystal display device formed by using the same Pending JPH08334755A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7141728A JPH08334755A (en) 1995-06-08 1995-06-08 Production of electrode substrate for liquid crystal display device and liquid crystal display device formed by using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7141728A JPH08334755A (en) 1995-06-08 1995-06-08 Production of electrode substrate for liquid crystal display device and liquid crystal display device formed by using the same

Publications (1)

Publication Number Publication Date
JPH08334755A true JPH08334755A (en) 1996-12-17

Family

ID=15298832

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7141728A Pending JPH08334755A (en) 1995-06-08 1995-06-08 Production of electrode substrate for liquid crystal display device and liquid crystal display device formed by using the same

Country Status (1)

Country Link
JP (1) JPH08334755A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100468594B1 (en) * 1997-08-13 2005-07-11 삼성전자주식회사 LCD and its manufacturing method
KR100601193B1 (en) * 1999-04-17 2006-07-13 삼성전자주식회사 Color filter on array type active matrix substrate and method for fabricating the same
JP2007266451A (en) * 2006-03-29 2007-10-11 Nippon Steel Chem Co Ltd Method of manufacturing semiconductor device provided with bump
US7369202B2 (en) 2003-10-14 2008-05-06 Lg.Philips Lcd Co., Ltd. Liquid crystal display panel of horizontal electronic field applying type and fabricating method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100468594B1 (en) * 1997-08-13 2005-07-11 삼성전자주식회사 LCD and its manufacturing method
KR100601193B1 (en) * 1999-04-17 2006-07-13 삼성전자주식회사 Color filter on array type active matrix substrate and method for fabricating the same
US7369202B2 (en) 2003-10-14 2008-05-06 Lg.Philips Lcd Co., Ltd. Liquid crystal display panel of horizontal electronic field applying type and fabricating method thereof
JP2007266451A (en) * 2006-03-29 2007-10-11 Nippon Steel Chem Co Ltd Method of manufacturing semiconductor device provided with bump

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