JPH08314156A - Resist pattern forming method - Google Patents
Resist pattern forming methodInfo
- Publication number
- JPH08314156A JPH08314156A JP14522295A JP14522295A JPH08314156A JP H08314156 A JPH08314156 A JP H08314156A JP 14522295 A JP14522295 A JP 14522295A JP 14522295 A JP14522295 A JP 14522295A JP H08314156 A JPH08314156 A JP H08314156A
- Authority
- JP
- Japan
- Prior art keywords
- resist layer
- positive resist
- resist
- substrate
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体素子の製造等にお
けるレジストパターン形成方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a resist pattern in the manufacture of semiconductor devices.
【０００２】[0002]
【従来の技術】ポジ形レジスト層にパターンを形成する
にあたって、マスクからの回折光によってその微細化が
妨げられる。即ち、露光後にマスクの開口部近傍のレジ
スト層にマスクから回折する光が当たるため、露光時に
この部分のレジスト層が露光部分と同じように現像液に
溶解して微細化が妨げられる。かかる問題を解決する手
段としてポジ形レジスト層をアルカリ水溶液により改質
する方法がある。これは露光前にポジ形レジスト層の形
成された半導体基板をアルカリ水溶液中に浸漬させてレ
ジスト層表面に難溶性層を形成する方法である。この方
法によれば、上記のマスクから回折する光が当った部分
も他の未露光部分と同様にエッチングによって溶けるこ
とがないので微細なパターンを比較的良好に形成するこ
とができる。2. Description of the Related Art In forming a pattern on a positive type resist layer, the miniaturization is hindered by diffracted light from a mask. That is, after the exposure, the resist layer near the opening of the mask is exposed to the light diffracted from the mask, so that the resist layer in this portion is dissolved in the developing solution in the same manner as the exposed portion to prevent miniaturization. As a means for solving such a problem, there is a method of modifying the positive resist layer with an alkaline aqueous solution. This is a method in which a semiconductor substrate having a positive resist layer formed before exposure is immersed in an alkaline aqueous solution to form a hardly soluble layer on the surface of the resist layer. According to this method, the portion exposed to the light diffracted from the mask is not melted by etching like other unexposed portions, so that a fine pattern can be formed relatively well.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、上記の
アルカリ水溶液の改質方法によっても未だ十分なレベル
にまでパターン形状の向上が図れなかった。However, even with the above-mentioned method for modifying the alkaline aqueous solution, the pattern shape cannot be improved to a sufficient level.
【０００４】そこで、本発明はポジ形レジスト層に微細
パターンを容易に且つ良好に形成することができる方法
を提供することを目的とする。Therefore, an object of the present invention is to provide a method capable of easily and satisfactorily forming a fine pattern on a positive resist layer.
【０００５】[0005]
【課題を解決するための手段】上記目的を達成するため
の本発明は、ナフトキノンジアジド系物質及びフェノー
ル系樹脂を含むポジ形レジスト層を基板の主面に形成す
る第１の工程と、超音波振動を加えたアルカリ水溶液中
に前記基板を浸漬させることによって前記ポジ形レジス
ト層の表面側にアルカリ水溶液を浸透させて前記ポジ形
レジスト層の表面側に前記ナフトキノンジアジド系物質
と前記フェノール系樹脂とが結合して成る部分を形成す
る第２の工程と、前記ポジ形レジスト層の所定領域をマ
スクを使用して選択的に露光する第３の工程と、前記ポ
ジ形レジスト層に現像を施して前記ポジ形レジスト層の
前記所定領域を選択的に除去する第４の工程とを備えた
レジストパターンの形成方法に係わるものである。な
お、請求項２に示すように第２の工程との間に乾燥工程
を設けることが望ましい。The present invention for achieving the above object comprises a first step of forming a positive resist layer containing a naphthoquinonediazide substance and a phenol resin on a main surface of a substrate, and ultrasonic wave. The naphthoquinonediazide-based substance and the phenol-based resin are allowed to penetrate into the surface of the positive resist layer by immersing the substrate in a vibrated alkaline aqueous solution to penetrate the surface of the positive resist layer. A second step of forming a portion formed by bonding with each other, a third step of selectively exposing a predetermined region of the positive resist layer using a mask, and developing the positive resist layer. And a fourth step of selectively removing the predetermined region of the positive resist layer. It is desirable that a drying step is provided between the second step and the second step.
【０００６】[0006]
【発明の作用及び効果】本発明によれば、レジスト層の
うちマスクの開口部直下の露出部分のエッチングレート
を開口部近傍のマスクからの回折光が当たる部分のエッ
チングレートに比べて十分に大きくできる。このため、
比較的大きなエッチングレートの差を利用してポジ形レ
ジスト層に微細パターンを良好に形成することができ
る。即ち、本発明においては、第２の工程でアルカリ水
溶液に超音波振動を加えてアルカリ改質を行っている。
このように、超音波下でアルカリ改質を行うと、超音波
を加えない従来のアルカリ改質に比べて多くの樹脂分が
レジスト表面から選択的に改質液中に溶出する。このた
め、レジスト表面においては樹脂に対するナフトキノン
ジアジドの相対量が従来のアルカリ改質レジストよりも
増加する。レジスト中に含まれるこのナフトキノンジア
ジドは露光されるとレジスト中の水分と反応して現像液
溶解成分であるインデンカルボン酸に変化する。従っ
て、本発明によれば、従来のアルカリ改質よりもこのイ
ンデンカルボン酸の含有率が多くなり、露光部分のエッ
チングレートを大きくできる。一方、マスクからの回折
光が当たる部分のエッチングレートは、ポジ形レジスト
層中のナフトキノンジアジド系物質とフェノール系樹脂
がアルカリによって反応し結合することによってレジス
ト層の表面に難溶性層が形成され、超音波下でのアルカ
リ改質によれば従来例よりもこの難溶性層が強固となる
と考えられる。この結果、本発明では露光部分のエッチ
ングレートが速くなった分だけ露光部分と未露光部分
（マスクから回折する光が当った部分を含む）のエッチ
ングレート差が増加し、微細パターンが良好に形成され
る。なお、請求項２に従う乾燥工程を設けると、露光部
分と未露光部分のエッチングレート差が更に大きくな
る。これは露光部分のレジスト層のエッチングレートが
速くなるためである。即ちレジスト層の表面が乾燥する
ことによって、露光時にレジスト層の内部に対する光の
入射率が向上し、光による反応の結果生成される現像液
溶解成分の生成が促進されること、及びレジスト層の乾
燥中に、レジスト層の表面の水分がレジスト層内部に浸
透し、現像液溶解部分が多く生成されることに起因す
る。また、樹脂に対するナフトキノンジアジドの相対量
を増加されることで、レジストの露光エネルギ−に対す
る感度を従来の浸漬改質レジストより向上できる。すな
わち、超音波下でレジストをアルカリ処理することでレ
ジスト感度がさらに向上し、レジストの持つ限界解像能
力以上のさらに微細なパタ−ンを解像することが可能に
なるAccording to the present invention, the etching rate of the exposed portion of the resist layer immediately below the opening of the mask is sufficiently higher than the etching rate of the portion of the resist layer exposed to the diffracted light from the mask. it can. For this reason,
It is possible to favorably form a fine pattern on the positive resist layer by utilizing a relatively large difference in etching rate. That is, in the present invention, the alkaline reforming is performed by applying ultrasonic vibration to the alkaline aqueous solution in the second step.
As described above, when the alkali modification is performed under ultrasonic waves, a larger amount of resin is selectively eluted from the resist surface into the modifying solution as compared with the conventional alkali modification in which ultrasonic waves are not added. Therefore, the relative amount of naphthoquinonediazide with respect to the resin on the resist surface is larger than that of the conventional alkali-modified resist. When exposed, this naphthoquinonediazide contained in the resist reacts with the water in the resist to be converted into indenecarboxylic acid which is a developing solution dissolving component. Therefore, according to the present invention, the content rate of this indenecarboxylic acid is higher than that in the conventional alkali modification, and the etching rate of the exposed portion can be increased. On the other hand, the etching rate of the portion exposed to the diffracted light from the mask, the naphthoquinonediazide-based substance in the positive resist layer and the phenolic resin react with alkali and bond to form a hardly soluble layer on the surface of the resist layer, It is considered that this hardly soluble layer becomes stronger than the conventional example by the alkali modification under ultrasonic waves. As a result, in the present invention, the etching rate difference between the exposed portion and the unexposed portion (including the portion where the light diffracted from the mask hits) increases by the amount that the etching rate of the exposed portion becomes faster, and a fine pattern is formed well To be done. When the drying step according to the second aspect is provided, the difference in etching rate between the exposed portion and the unexposed portion is further increased. This is because the etching rate of the resist layer in the exposed portion becomes faster. That is, by drying the surface of the resist layer, the incidence rate of light on the inside of the resist layer during exposure is improved, and the generation of a developer-dissolved component generated as a result of the reaction by light is promoted. This is because moisture on the surface of the resist layer permeates into the resist layer during drying, and a large amount of developer-dissolved portion is generated. Further, by increasing the relative amount of naphthoquinonediazide with respect to the resin, the sensitivity of the resist to the exposure energy can be improved as compared with the conventional immersion modified resist. That is, by subjecting the resist to an alkali treatment under ultrasonic waves, the resist sensitivity is further improved, and it becomes possible to resolve a finer pattern than the limit resolution capability of the resist.
【０００７】[0007]
【実施例】次に、本発明の一実施例に係わる半導体素子
の製造方法を図１〜図６を参照して説明する。本実施例
では、まず、図１に示すように一方の主面にポジ形レジ
スト層１が形成された半導体基板２を用意する。ポジ形
レジスト層１はナフトキノンジアジド、フェノール樹
脂、及びエチルセロソルブアセテート等の溶剤を含有し
ている。本実施例のポジ形レジスト層１は約１．２μｍ
の膜厚を有し、周知のスピンナを利用した塗布により形
成されている。Next, a method of manufacturing a semiconductor device according to an embodiment of the present invention will be described with reference to FIGS. In this embodiment, first, as shown in FIG. 1, a semiconductor substrate 2 having a positive resist layer 1 formed on one main surface is prepared. The positive resist layer 1 contains a solvent such as naphthoquinone diazide, a phenol resin, and ethyl cellosolve acetate. The positive resist layer 1 of this embodiment has a thickness of about 1.2 μm.
It is formed by coating using a well-known spinner.
【０００８】次に、図１の半導体基板２に約１１０℃、
９０秒間のプリベーク（熱処理）を行い、レジスト層１
中の溶剤を揮発させた。このプリベークにより、レジス
ト層１と半導体基板２が良好に密着すると共に、後述の
露光時にマスクにレジスト層１が付着することが防止さ
れる。なお、このプリベークが不十分であり、溶剤が十
分に揮発しない状態で後述のアルカリ処理を行うと後述
の改質反応が良好に進行し難くなり、改質効果が十分に
発揮されない虞れがある。従って、レジスト層１中の溶
剤は完全に揮発させることが望ましい。Next, the semiconductor substrate 2 shown in FIG.
Pre-baking (heat treatment) for 90 seconds is performed to form the resist layer 1
The solvent inside was volatilized. By this pre-baking, the resist layer 1 and the semiconductor substrate 2 are satisfactorily adhered to each other, and the resist layer 1 is prevented from adhering to the mask during the exposure described later. In addition, if the prebaking is insufficient and the solvent is not sufficiently volatilized, and the alkali treatment described below is performed, it becomes difficult for the reforming reaction described below to proceed satisfactorily, and the reforming effect may not be sufficiently exhibited. . Therefore, it is desirable that the solvent in the resist layer 1 be completely volatilized.
【０００９】次に、このプリベークを終えた半導体基板
２を図２に示すようにビ−カ１０の中のアルカリ水溶液
（０．２４Ｍテトラメチルアンモニウムヒドロキシド水
溶液）１１中に浸漬させた、これを超音波洗浄器１２の
中に水１３と共に入れ、アルカリ水溶液１１及びレジス
ト層１を有する半導体基板２に超音波振動を加えた。な
お、レジスト層１が上になるように半導体基板２を配置
した。また、アルカリ水溶液１１の温度は２３℃とし、
１２４Ｗのパワーの超音波を連続して６０秒間加え、こ
の途中１５秒間隔で３回半導体基板２を揺動させた。こ
れによって、レジスト層１の表面側の層にアルカリ水溶
液が浸透し、レジスト層１中のナフトキノンジアジドと
フェノール樹脂がアルカリによって反応して結合して図
３に示すようにレジスト層１の表面側に難溶性部分１ｂ
が形成された。即ち、レジスト層１はエッチングレート
の高い内側の易溶性部分１ａとエッチングレートの低い
表面側の難溶性部分１ｂとの２層構成になった。なお、
レジスト層１の半導体基板２との界面側にはアルカリ水
溶液が浸透しないので上記の反応及び結合は生ぜず難溶
性部分１ｂは形成されない。Next, as shown in FIG. 2, the semiconductor substrate 2 which has been prebaked is dipped in an alkaline aqueous solution (0.24M tetramethylammonium hydroxide aqueous solution) 11 in a beaker 10, which is then dipped. Water 13 was placed in an ultrasonic cleaner 12, and ultrasonic vibration was applied to the semiconductor substrate 2 having the alkaline aqueous solution 11 and the resist layer 1. The semiconductor substrate 2 was arranged so that the resist layer 1 was on the top. The temperature of the alkaline aqueous solution 11 is 23 ° C.,
Ultrasonic waves with a power of 124 W were continuously applied for 60 seconds, and the semiconductor substrate 2 was rocked 3 times at 15-second intervals during this. As a result, the alkaline aqueous solution permeates into the layer on the surface side of the resist layer 1, and the naphthoquinone diazide and the phenol resin in the resist layer 1 react with each other by the alkali and bond with each other, so that the naphthoquinonediazide in the resist layer 1 is bonded to the surface side of the resist layer 1 as shown in FIG. Hardly soluble part 1b
Was formed. That is, the resist layer 1 has a two-layer structure of an easily soluble portion 1a on the inner side having a high etching rate and a hardly soluble portion 1b on the surface side having a low etching rate. In addition,
Since the alkaline aqueous solution does not penetrate into the interface side of the resist layer 1 with the semiconductor substrate 2, the above reaction and bonding do not occur and the hardly soluble portion 1b is not formed.
【００１０】次に、難溶性部分１ｂが形成された半導体
基板２を純水を用いて洗浄した後、スピンナによってレ
ジスト層１に付着した水分を除去した。このスピンナに
よる水分の除去は空気雰囲気中で行ったが、場合によっ
ては窒素雰囲気中で行ってもよい。Next, the semiconductor substrate 2 having the hardly soluble portion 1b formed thereon was washed with pure water, and then the water adhering to the resist layer 1 was removed by a spinner. The removal of water by the spinner was performed in an air atmosphere, but in some cases, it may be performed in a nitrogen atmosphere.
【００１１】次に、この半導体基板２を図４に示すよう
に、乾燥容器３に配置し、圧縮空気ボンベ４から乾燥容
器３中に圧縮空気を導入してレジスト層１を乾燥させ
た。ここで重要なことは、レジスト層１の表面側のみを
乾燥させて半導体基板２との界面側は乾燥させずに水分
を残存させておくことである。この理由は後述する。な
お、本実施例では、圧縮空気を半導体基板２のレジスト
層１が形成されていない側の面５に当ててレジスト層１
の乾燥を行っている。これはレジスト層１の表面に圧縮
空気が当たりレジストのアルカリ改質による結合にダメ
ージを与えないようにするためである。なお、本実施例
では圧縮空気を０．２ｋｇ／ｃｍ2 の圧力で導入し、約
１５分間レジスト層１の乾燥を行った。圧縮空気の代り
にＡｒやＮ2 等のガスを用いることも可能である。ま
た、本実施例ではレジスト層１の乾燥は難溶性部分１ｂ
の全体を含むように、難溶性部分１ｂよりも深い位置ま
で行う。このようにすることによって、基板２上のレジ
スト層１をより均一に乾燥させることができる。Next, as shown in FIG. 4, this semiconductor substrate 2 was placed in a drying container 3, and compressed air was introduced into the drying container 3 from a compressed air cylinder 4 to dry the resist layer 1. What is important here is that only the surface side of the resist layer 1 is dried and the interface side with the semiconductor substrate 2 is not dried, and the water is left. The reason for this will be described later. In this example, the compressed air is applied to the surface 5 of the semiconductor substrate 2 on which the resist layer 1 is not formed so that the resist layer 1 is formed.
Is being dried. This is to prevent compressed air from hitting the surface of the resist layer 1 and damaging the bond due to alkali modification of the resist. In this example, compressed air was introduced at a pressure of 0.2 kg / cm 2 and the resist layer 1 was dried for about 15 minutes. It is also possible to use a gas such as Ar or N2 instead of the compressed air. Further, in this embodiment, the resist layer 1 is dried only in the hardly soluble portion 1b.
To a position deeper than the sparingly soluble portion 1b so as to include the whole. By doing so, the resist layer 1 on the substrate 2 can be dried more uniformly.
【００１２】次に、半導体基板２の他方の主面５側（レ
ジスト形成面と反対側）を下側にしてホットプレート上
に基板２を配置し、レジスト層１に１５０℃で約５分間
ベーク（熱処理）を施す。熱処理が施されることによっ
て難溶性部分１ｂの結合が強固となりエッチング液に溶
け難くなる。Next, the substrate 2 is placed on a hot plate with the other main surface 5 side (the side opposite to the resist forming surface) of the semiconductor substrate 2 facing downward, and the resist layer 1 is baked at 150 ° C. for about 5 minutes. (Heat treatment). By the heat treatment, the bond of the poorly soluble portion 1b becomes strong and becomes difficult to dissolve in the etching solution.
【００１３】次に、図５に示すように、レジスト層１の
上方にマスク６を近接配置し、レジスト層１にｇ線（波
長４３６ｎｍ付近の紫外線）を用いて露光を施す。レジ
スト層１は、従来技術と同様にマスク６の開口部分７に
対向する領域が露光されるとともに、マスク６からの回
折によりマスク６の開口部分７に対向する領域の近傍の
レジスト層１にもｇ線が弱く照射される。なお、本実施
例ではランプ照度を３０ｍＷ、露光時間を４．０秒とし
て約１２０ｍＪ／ｃｍ2 の露光量によって露光した。Next, as shown in FIG. 5, a mask 6 is arranged in proximity to the resist layer 1 and the resist layer 1 is exposed using g rays (ultraviolet rays having a wavelength of about 436 nm). The resist layer 1 is exposed in a region facing the opening 7 of the mask 6 as in the conventional technique, and is also exposed in the resist layer 1 near the region facing the opening 7 of the mask 6 due to diffraction from the mask 6. The g-line is emitted weakly. In this example, the lamp illuminance was 30 mW, the exposure time was 4.0 seconds, and the exposure amount was about 120 mJ / cm 2 .
【００１４】最後に、この半導体基板２上のレジスト層
１を現像し、図６に示すようにマスク６の開口７に対向
した領域即ち露光部分のレジスト層１を選択的に除去し
た。これによって得られたレジストパターンは半導体基
板２の表面に形成されている絶縁膜又は金属膜又は半導
体のエッチングマスクとして使用される。Finally, the resist layer 1 on the semiconductor substrate 2 was developed to selectively remove the resist layer 1 in the region facing the opening 7 of the mask 6, that is, the exposed portion, as shown in FIG. The resist pattern obtained by this is used as an etching mask for an insulating film or a metal film or a semiconductor formed on the surface of the semiconductor substrate 2.
【００１５】本実施例によれば、レジスト層１のうちマ
スクからの回折光が当った部分のエッチングレートは従
来例と同様に小さいままか又は従来例よりも小さくな
り、レジスト層１の露光部分のエッチングレートは従来
例よりも大きくなる。この結果、露光部分を所望量に除
去するのに必要な現像時間を短縮できるためマスクから
の回折光が当った部分のレジスト層１の溶解を十分に少
なくできパターン形状の向上が図れる。According to the present embodiment, the etching rate of the portion of the resist layer 1 exposed to the diffracted light from the mask remains small as in the conventional example or becomes smaller than that of the conventional example, and the exposed portion of the resist layer 1 is reduced. The etching rate of is higher than that of the conventional example. As a result, the development time required to remove the exposed portion to a desired amount can be shortened, so that the dissolution of the resist layer 1 in the portion exposed to the diffracted light from the mask can be sufficiently reduced and the pattern shape can be improved.
【００１６】レジスト層１の露光部分のエッチングレ−
トが大きくなるのは、発明の作用効果の説明の欄で既に
述べたように超音波下でアルカリ改質を行うためであ
る。更に、乾燥工程を設けたことによってもレジスト層
１の露光部分のエッチングレートが大きくなる。この理
由を次に述べる。レジスト層１中に含まれるナフトキノ
ンジアジドは露光されるとレジスト中の水分と反応して
現像液溶解成分であるインデンカルボン酸に変化する。
乾燥工程を設ければ、このインデンカルボン酸を次の
（イ）（ロ）の理由で多く生成することができる。 （イ） レジスト層１の表面側を乾燥させるので、レジ
スト層１の表面側の水分が減少しレジスト層１の表面に
おける光の入射率が増加し、インデンカルボン酸の生成
が促進される。 （ロ） レジスト乾燥中にレジスト層１の表面の水分が
レジスト層１の内部に浸透し、レジスト層１の内部に水
分が比較的豊富に存在し、従来例よりも露光によって現
像液溶解成分であるインデンカルボン酸をレジスト層１
の内部に比較的多く生成することができる。これによっ
てレジスト層１の露光部分のエッチングレートを大きく
することができる。The etching rate of the exposed portion of the resist layer 1
The reason for the large size is that the alkali modification is performed under ultrasonic waves as already described in the section of the description of the function and effect of the invention. Further, the etching rate of the exposed portion of the resist layer 1 is increased by providing the drying step. The reason will be described below. When exposed, the naphthoquinonediazide contained in the resist layer 1 reacts with the moisture in the resist to be converted into indenecarboxylic acid which is a developing solution dissolving component.
If a drying step is provided, a large amount of this indenecarboxylic acid can be produced for the following reasons (a) and (b). (A) Since the surface side of the resist layer 1 is dried, the water content on the surface side of the resist layer 1 decreases, the incidence rate of light on the surface of the resist layer 1 increases, and the generation of indenecarboxylic acid is promoted. (B) Moisture on the surface of the resist layer 1 permeates into the resist layer 1 during drying of the resist, and the water content in the resist layer 1 is relatively abundant. A certain indenecarboxylic acid resist layer 1
Can be generated in a relatively large amount inside. Thereby, the etching rate of the exposed portion of the resist layer 1 can be increased.
【００１７】[0017]
【変形例】本発明は上述の実施例に限定されるものでな
く、例えば次の変形が可能なものである。 （１） レジスト層１の表面領域の乾燥は、スピン乾燥
によっても達成できる。しかしながら、スピン乾燥のよ
うにレジスト層表面を動かしながら乾燥した場合は、例
えば上記（ロ）の作用効果が十分に得られないことがあ
る。従って、レジスト層１の表面側の乾燥は実施例のよ
うに圧縮空気等のふき付けによって行うのが望ましい。 （２） 実施例では露光にｇ線を使用したが、更に波長
の短いｉ線等を使用してもそれなりの効果が得られる。 （３） レジストの乾燥は上記（イ）の作用効果（光の
入射率向上）が良好に得られるように表面からレジスト
厚の１／５以上まで行うのが望ましい。しかし、あまり
乾燥した層が厚すぎると上記（ロ）の作用効果（水分と
の結合による現像液溶解成分の生成）が良好に得られな
くなるのでレジスト厚の１／３以下とするのが望まし
い。[Modifications] The present invention is not limited to the above-described embodiment, and for example, the following modifications are possible. (1) Drying of the surface region of the resist layer 1 can also be achieved by spin drying. However, when drying is performed while moving the surface of the resist layer as in spin drying, for example, the effect (b) above may not be sufficiently obtained. Therefore, it is desirable to dry the surface side of the resist layer 1 by wiping compressed air or the like as in the embodiment. (2) In the embodiment, g-line is used for exposure, but even if i-line having a shorter wavelength is used, a certain effect can be obtained. (3) It is desirable that the resist is dried from the surface to ⅕ or more of the resist thickness so that the effect (a) (improvement of the incident rate of light) can be obtained. However, if the dried layer is too thick, the function and effect (b) described above (generation of the developer-dissolved component due to binding with water) cannot be satisfactorily obtained. Therefore, the thickness is preferably ⅓ or less of the resist thickness.
【図１】実施例において半導体基板にレジスト層を形成
した状態を示す断面図である。FIG. 1 is a cross-sectional view showing a state in which a resist layer is formed on a semiconductor substrate in an example.
【図２】アルカリ水溶液中の基板に超音波振動を加える
状態を原理的に示す断面図である。FIG. 2 is a sectional view showing in principle a state in which ultrasonic vibration is applied to a substrate in an alkaline aqueous solution.
【図３】図１のレジスト層に難溶性部分を設けた状態を
示す断面図である。FIG. 3 is a cross-sectional view showing a state where a hardly soluble portion is provided on the resist layer of FIG.
【図４】レジスト層の乾燥装置を原理的に示す断面図で
ある。FIG. 4 is a cross-sectional view showing in principle a drying device for a resist layer.
【図５】レジスト層の露光状態を示す断面図である。FIG. 5 is a cross-sectional view showing an exposed state of a resist layer.
【図６】レジスト層の現像後の状態を示す断面図であ
る。FIG. 6 is a cross-sectional view showing a state after development of a resist layer.
１ レジスト層 １ｂ 難溶性部分 ２ 半導体基板 ４ 圧縮空気ボンベ 1 Resist Layer 1b Insoluble Part 2 Semiconductor Substrate 4 Compressed Air Cylinder
Claims (2)
ール系樹脂を含むポジ形レジスト層を基板の主面に形成
する第１の工程と、 超音波振動を加えたアルカリ水溶液中に前記基板を浸漬
させることによって前記ポシ形レジスト層の表面側にア
ルカリ水溶液を浸透させて前記ポジ形レジスト層の表面
側に前記ナフトキノンジアジド系物質と前記フェノール
系樹脂とが結合して成る部分を形成する第２の工程と、 前記ポジ形レジスト層の所定領域をマスクを使用して選
択的に露光する第３の工程と、 前記ポジ形レジスト層に現像を施して前記ポジ形レジス
ト層の前記所定領域を選択的に除去する第４の工程とを
備えたレジストパターンの形成方法。1. A first step of forming a positive resist layer containing a naphthoquinonediazide-based substance and a phenolic resin on a main surface of a substrate, and immersing the substrate in an alkaline aqueous solution to which ultrasonic vibration is applied. A second step of infiltrating an alkaline aqueous solution into the surface of the positive resist layer to form a portion on the surface of the positive resist layer in which the naphthoquinonediazide-based substance and the phenolic resin are bound to each other; A third step of selectively exposing a predetermined region of the positive resist layer using a mask, and developing the positive resist layer to selectively remove the predetermined region of the positive resist layer And a fourth step of forming a resist pattern.
の部分は乾燥させないか又は弱く乾燥させ、前記ポジ形
レジスト層の表面側の部分を基板側の部分よりも強く乾
燥させる工程を有することを特徴とする請求項１記載の
レジストパタ−ンの形成方法。2. The method further comprises the step of not drying or weakly drying the portion of the positive resist layer on the substrate side, and drying the portion of the positive resist layer on the front surface side more strongly than the portion on the substrate side. The method of forming a resist pattern according to claim 1, wherein:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7145222A JP2896870B2 (en) | 1995-05-19 | 1995-05-19 | Method of forming resist pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7145222A JP2896870B2 (en) | 1995-05-19 | 1995-05-19 | Method of forming resist pattern |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08314156A true JPH08314156A (en) | 1996-11-29 |
| JP2896870B2 JP2896870B2 (en) | 1999-05-31 |
Family
ID=15380182
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7145222A Expired - Fee Related JP2896870B2 (en) | 1995-05-19 | 1995-05-19 | Method of forming resist pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2896870B2 (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6372389B1 (en) | 1999-11-19 | 2002-04-16 | Oki Electric Industry Co, Ltd. | Method and apparatus for forming resist pattern |
| JP2005294520A (en) * | 2004-03-31 | 2005-10-20 | Tokyo Electron Ltd | Application/image pickup device and application/development method |
| JP2006005335A (en) * | 2004-05-17 | 2006-01-05 | Fuji Photo Film Co Ltd | Pattern formation method |
| JP2006310733A (en) * | 2004-11-10 | 2006-11-09 | Dainippon Screen Mfg Co Ltd | Substrate processing equipment and method |
| JP2006310732A (en) * | 2004-12-06 | 2006-11-09 | Dainippon Screen Mfg Co Ltd | Substrate processing equipment |
| JP2006310730A (en) * | 2004-12-06 | 2006-11-09 | Dainippon Screen Mfg Co Ltd | Substrate processing equipment |
| JP2006310731A (en) * | 2004-12-06 | 2006-11-09 | Dainippon Screen Mfg Co Ltd | Substrate processing equipment and method |
| US7713685B2 (en) | 2004-06-09 | 2010-05-11 | Panasonic Corporation | Exposure system and pattern formation method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6692164B2 (en) | 1999-11-19 | 2004-02-17 | Oki Electric Industry Co, Ltd. | Apparatus for cleaning a substrate on which a resist pattern is formed |
| US6806005B2 (en) | 1999-11-19 | 2004-10-19 | Oki Electric Industry Co, Ltd. | Method and apparatus for forming resist pattern |
| US6372389B1 (en) | 1999-11-19 | 2002-04-16 | Oki Electric Industry Co, Ltd. | Method and apparatus for forming resist pattern |
| KR100839886B1 (en) * | 2004-03-31 | 2008-06-19 | 도쿄엘렉트론가부시키가이샤 | Coater/developer and coating/developing method |
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| WO2005101467A1 (en) * | 2004-03-31 | 2005-10-27 | Tokyo Electron Limited | Coater/developer and coating/developing method |
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| US7665916B2 (en) | 2004-03-31 | 2010-02-23 | Tokyo Electron Limited | Coater/developer and coating/developing method |
| JP2006005335A (en) * | 2004-05-17 | 2006-01-05 | Fuji Photo Film Co Ltd | Pattern formation method |
| US7892722B2 (en) | 2004-05-17 | 2011-02-22 | Fujifilm Corporation | Pattern forming method |
| US7713685B2 (en) | 2004-06-09 | 2010-05-11 | Panasonic Corporation | Exposure system and pattern formation method |
| US8088565B2 (en) | 2004-06-09 | 2012-01-03 | Panasonic Corporation | Exposure system and pattern formation method |
| JP2006310733A (en) * | 2004-11-10 | 2006-11-09 | Dainippon Screen Mfg Co Ltd | Substrate processing equipment and method |
| US8034190B2 (en) | 2004-11-10 | 2011-10-11 | Sokudo Co., Ltd. | Substrate processing apparatus and substrate processing method |
| JP2006310731A (en) * | 2004-12-06 | 2006-11-09 | Dainippon Screen Mfg Co Ltd | Substrate processing equipment and method |
| JP2006310730A (en) * | 2004-12-06 | 2006-11-09 | Dainippon Screen Mfg Co Ltd | Substrate processing equipment |
| JP2006310732A (en) * | 2004-12-06 | 2006-11-09 | Dainippon Screen Mfg Co Ltd | Substrate processing equipment |
| US8040488B2 (en) | 2004-12-06 | 2011-10-18 | Sokudo Co., Ltd. | Substrate processing apparatus |
| US8585830B2 (en) | 2004-12-06 | 2013-11-19 | Sokudo Co., Ltd. | Substrate processing apparatus and substrate processing method |
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