JPH08254714A - Production of reflection type liquid crystal display device - Google Patents

Abstract

PURPOSE: To entirely eliminate the problem of corrosion and dissolution by the galvanic cell effect occurring in a developer at the time of forming a mask to be used for patterning of a reflection electrode film when Al is used for the reflection electrode film and ITO for connecting electrodes and even if pinhole exists in the reflection electrode film. CONSTITUTION: TFT parts are covered with a passivation film 30 formed with through-holes 30A in which source electrodes 28S are partly exposed. A resist film 34 is formed in the state of exposing the connecting electrodes 32G in gate terminal parts and exposing the connecting electrodes 32D in drain terminal parts. Openings 34A of reflection electrode patterns exposing the through-holes 30A are formed by executing exposing and developing of the resist film 34. The reflection electrode film 35 is formed on the resist film 34 including the openings 34A. The resist film 34 is peeled together with the reflection electrode film 35 existing therein, by which the reflection electrodes in contact with the source electrodes 28S are obtd.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a reflective liquid crystal display device having an improved structure so that parallax is unlikely to occur.

At present, in a reflection type liquid crystal display device, when a reflector is installed outside the cell, parallax due to the thickness of the rear glass substrate is likely to occur. The structure in which the reflective layer is provided inside the cell has been performed.

However, if this is done, damage will occur during or after manufacture, which will cause a decrease in manufacturing yield and deterioration of reliability. Therefore, it is necessary to improve this, and according to the present invention, the problem is solved. Can be resolved.

[0004]

2. Description of the Related Art FIG. 18 shows a TFT (thin film transistor) in a standard reflective liquid crystal display device.
r) It is a principal part top view showing a board | substrate.

In the figure, 1 is a transparent insulating substrate (glass substrate), 2 is a TFT region, 3 is a gate terminal, and 4 is a drain terminal.

FIG. 19 is an enlarged plan view of a part of the TFT area shown in FIG. 18, showing a certain pixel in the center and the vicinity thereof.

In the drawing, 11 is a gate electrode / wiring, 1
1A is a gate electrode, 12 is a drain electrode / wiring, 12A
Is a drain electrode, 13 is a source electrode, and 13A is a through electrode.
Holes and 14 indicate pixel electrodes (reflection electrodes), respectively.

FIG. 20 is an enlarged plan view of an essential part of the terminal portion shown in FIG. 18, in which (A) is a gate terminal portion and (B) is a drain terminal portion.
The same symbols as those used in represent the same parts or have the same meanings.

In the figure, 15 is an electrode for connecting to an external element, 16 is a through hole, 17 is an electrode for connecting to an external element, and 18 is a through hole.

In order to obtain a reflective liquid crystal display device having a structure in which a reflective layer is provided inside the cell, the pixel electrode 14 can function as a reflective electrode in the TFT substrate described with reference to FIGS. Then, a process of forming a TFT substrate having such a structure will be described.

FIGS. 21 to 23 are side sectional views showing essential parts of the TFT substrate at the process steps for explaining the steps of manufacturing the TFT substrate described with reference to FIGS. 18 to 20. It will be explained with reference to the figure.

However, in any of the drawings, (TFT portion) is a view of the TFT portion shown in FIG. 19 cut along the line XX, and (gate terminal portion) is The gate terminal portion seen in (A) in FIG.
FIG. 21 is a diagram cut along the line Y, and (Drain terminal portion) is a diagram cut along the line XX of the drain terminal portion shown in FIG. .

The steps up to the structure of the TFT substrate shown in FIG. 21 are the same as those of the embodiment of the present invention described with reference to FIGS. 1 to 13A except the formation of the reflective electrode film 35. Since they are exactly the same, it is recommended to refer to those figures and explanations.

Refer to FIG. 21 (A). 21- (1) The state of the TFT substrate shown is

In the (TFT portion), the gate electrode 22G is formed on the insulating transparent substrate 21,
The gate electrode 22G is covered with the gate insulating film 24, and the active layer 25 is formed on the gate insulating film 24.
A channel protective film 26 is formed on the active layer 25 corresponding to G, and the drain electrode 28D is sandwiched with the channel protective film 26 in between.
And a source electrode 28S are formed to face each other, a passivation film 30 having an opening is formed on the source electrode 28S on the source electrode 28S, and a reflection that contacts the source electrode 28S through the opening is formed on the passivation film 30. The electrode film 35 is in a formed state.

In the (gate terminal portion), the gate electrode / wiring 22L is formed on the insulating transparent substrate 21, and the gate insulating film 24 having an opening on the gate electrode / wiring 22L and the passivation having the same opening on the gate electrode / wiring 22L. A connection electrode 32G that is covered with the film 30 and is in contact with the gate electrode / wiring 22L through the opening is formed on the passivation film 30, and the reflective electrode film 35 is formed on the connection electrode 32G.
Is in the state of covering.

In the (drain terminal portion), the insulating transparent substrate 21 is covered with the gate insulating film 24, and the drain electrode / wiring 28L is formed on the gate insulating film 24 with the patterned active layer 25 as a base. A drain electrode / wiring 28L is covered therewith by a passivation film 30 having an opening. On the passivation film 30, a connection electrode 32D which contacts the gate electrode / wiring 28L through the opening is formed, and the connection electrode 32D is formed thereon. The reflective electrode film 35 is in a covered state.

1 to 13 showing an embodiment of the present invention.
The formation of the reflective electrode film 35, which leads to the step described in (A), will be described.

21- (2) The reflective electrode film 35 made of Al or Ag is formed by applying the vacuum deposition method.

21 (B) 21- (3) By applying the spin coating method, the reflective electrode film 3 is formed.
A resist is applied on the layer 5 to form a resist film 36.

22 (A) 22- (1) The resist film 36 is exposed and developed by applying a resist process in the lithography technique.
The pattern of the reflective electrode in the TFT portion is formed.
Note that no resist film remains on the gate terminal portion and the drain terminal portion.

22 (B) 22- (2) The reflective electrode film 35 is etched using the patterned resist film 36 as a mask to form a reflective electrode 35R in the TFT portion. The reflective electrode film 35 in the gate terminal portion and the drain terminal portion is removed.

See FIG. 23. 23- (1) The reflective electrode film 35 is dipped in a resist stripping solution.
The resist film 36, which is a mask when etching is performed, is removed.

As a result, the reflective electrode 35R in contact with the source electrode 28S is exposed in the TFT portion, and the connection electrodes 32G and 32D are exposed in the gate terminal portion and the drain terminal portion.

[0025]

In order to form the reflective electrode 35R by etching the reflective electrode film 35 in the above-mentioned conventional technique, an etching solution of nitric acid + acetic acid + phosphoric acid + water is used. Wet etching method is used as an etchant.

Of course, it is preferable that the reflective electrode 35R is made of a material having a high reflectance, and Ag is most suitable in that sense. However, Ag is a material having a high diffusivity and is used as a base material. The possibility of diffusion and reaction of is large.

On the other hand, Al has a low possibility of diffusion and reaction to the underlayer, is widely used for metallization in integrated circuits, and has good characteristics such as etching conditions. , Al is often used.

By the way, in the conventional technique described with reference to FIGS. 21 to 23, the steps 21- (1) to 2
2- (2), in the gate terminal portion and the drain terminal portion, the reflective electrode film 35 made of Al is formed on the connection electrodes 32G and 32D made of ITO,
The reflective electrode film 35 is wet-etched as described above.

In general, a thin film has an order of magnitude more lattice defects and an incomplete crystal than a bulk material, and therefore many pin holes are formed in the reflective electrode film 35.

FIG. 24 is a cutaway side view of a main part showing an enlarged view of a portion surrounded by a broken line circle in FIG. 21 (B), and whether the same symbols as those used in FIG. 21 represent the same portions. Or they have the same meaning.

In the figure, 35P is a reflective electrode film 3 formed on the connecting electrode 32G or 32D made of ITO.
5 shows the pin hole generated in FIG.

Now, when the resist film 36 is exposed and developed in the state shown in the drawing, the developing solution is applied to the reflective electrode film 35.
And the connection electrode 32G or 32D simultaneously.

As described above, the material of the reflective electrode film 35 is A
1 and the material of the connecting electrode 32G or 32D is I
In the case of TO, the battery effect occurs due to the interposition of the developer,
Since Al and ITO react with each other and are corroded / dissolved, it has been found that this surely lowers the manufacturing yield of the TFT, and hence the manufacturing yield of the reflective liquid crystal display device.

In the present invention, even when Al is used for the reflective electrode film and ITO is used for the connecting electrode, and there are pin holes in the reflective electrode film,
When forming the mask used for patterning the reflective electrode film, the problems of corrosion and dissolution due to the cell effect caused by the developer should be eliminated.

[0035]

According to the present invention, a lift-off method is applied when forming a reflective electrode by patterning the reflective electrode film.
During the process of making a mask for off by exposure and development of the resist process in lithography technology,
It is basically that the gate terminal portion and the drain terminal portion are necessarily covered with the resist film.

From the above, in the method of manufacturing the reflective liquid crystal display device of the present invention, (1) in the process of manufacturing the TFT substrate, the TFT portion (for example, (TFT portion in each figure )), A passivation film (for example, the passivation film 3) in which a through hole (for example, the through hole 30A) that exposes a part of the source electrode (for example, the source electrode 28S) is formed.
0), the connection electrode (for example, the connection electrode 32G) is exposed at the gate terminal portion (for example, (gate terminal portion) in each figure), and at the drain terminal portion (for example, (drain terminal portion)). A step of forming a resist film (for example, resist film 34) on the entire surface in a state where the connection electrode (for example, connection electrode 32D) is exposed, and then exposing and developing the resist film to form the through hole. A step of forming an opening (for example, opening 34A) of the exposed reflective electrode pattern, and then a reflective electrode film (for example, reflective electrode film 3) on the resist film including the opening of the reflective electrode pattern.
5) and then peeling the resist film together with the reflective electrode film thereover (lift-off) to form a reflective electrode (for example, the reflective electrode 35R) in contact with the source electrode. Is included, or

(2) In the above (1), the step of exposing and developing the resist film to form the opening of the reflective electrode pattern and the opening of the light-shielding film pattern which exposes the through hole, and then the step of The opening of the reflective electrode pattern and the opening of the light shielding film pattern (for example, the opening 34 of the light shielding film pattern
A step of forming a reflective electrode film on the resist film containing B), and then peeling the resist film together with the reflective electrode film thereabove to prevent light leakage to the reflective electrode and the TFT in contact with the source electrode. Or a step of simultaneously forming a light-shielding film (for example, a light-shielding film 35C) to be suppressed, or

(3) In the above (1) or (2),
The material of the connecting electrode is ITO and the material of the reflective electrode is Al.

[0039]

By adopting the above-mentioned means, the resist film is never developed in the state where the reflective electrode film and the connecting electrode are in contact with each other. Even if the connecting electrodes at the terminal portion and the drain terminal portion are made of ITO, no corrosion or dissolution due to the battery effect occurs, and the reflection type is controlled by the TFT array. The manufacturing yield of liquid crystal display devices is improved.

[0040]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIGS. 1 to 15 are sectional views showing a TFT substrate at a process step for explaining a process of manufacturing a TFT substrate used for a reflection type liquid crystal display device according to a first embodiment of the present invention. It is a side view and will be described below with reference to these drawings.

In these figures as well (TFT portion)
20 is a view similar to the one shown by cutting the TFT portion shown in FIG. 19 along the line XX, and the (gate terminal portion) shows the gate terminal portion shown in FIG. −
FIG. 6 is a view similar to that shown cut along Y.
(Drain terminal portion) is a drawing similar to the one shown by cutting the drain terminal portion seen in FIG. 20B along the line XX.

1 (A) 1- (1) Insulating transparent substrate 2 used in a normal liquid crystal display device
Prepare 1. Although glass is generally used as the material of the insulating transparent substrate 21, a Si wafer, plastics, or the like can also be used.

1- (2) The gate electrode material film 22 is formed on the insulating transparent substrate 21. The gate electrode material film 22 includes Al, Ti, Cr
A conductive material such as, for example, can be used, and as a film forming technique, a vacuum vapor deposition method, a sputtering method, a chemical vapor deposition (chemical vapor deposition) method, or the like can be used.
on: CVD) method or the like can be applied.

See FIG. 1B. 1- (3) By applying the spin coating method, a resist is applied on the gate electrode material film 22 to form a resist film 23.

2 (A). 2- (1) The resist film 23 is exposed and developed by applying a resist process in the lithography technique.
A pattern of gate electrodes and wirings that are gate electrodes and gate bus lines is formed. No resist film remains on the drain terminal portion.

2 (B) 2- (2) The gate electrode material film 22 is etched using the patterned resist film 23 as a mask to form the gate electrode 22G in the TFT portion and the gate electrode / gate electrode portion in the gate terminal portion. The wiring 22L is formed.

To etch the gate electrode material film 22, a wet etching method is used in which an HCl-based etching solution, a hydrofluoric acid-based etching solution or the like is selected as an etchant according to the material, or, C
Reactive ion etching (reacti etching) that selects F ₄ gas or CCl ₄ gas as an etching gas
The ve-ion etching (RIE) method can be applied.

See FIG. 3A. 3- (1) The resist film 23, which is a mask when the gate electrode material film 22 is etched, is removed by immersing in a resist stripping solution and applying ultrasonic waves. According to this, the gate electrode 22G and the gate electrode / wiring 22L are exposed, but of course, since nothing remains in the drain terminal portion,
The insulating transparent substrate 21 remains as it is.

See FIG. 3B. 3- (2) The gate insulating film 2 is formed on the entire surface by applying the CVD method.
4 is formed. As a material of the gate insulating film 24,
SiN or SiO ₂ can be used.

3- (3) The active layer 25 is formed on the entire surface by applying the CVD method. Si may be used as the material of the active layer 25.

3- (4) For example, by applying an ion implantation method, n-type impurity ions or p-type impurity ions are implanted into the active layer 25 to make it conductive. The impurity activation heat treatment can be carried out independently or at a suitable stage together with other heat treatments.

3- (5) The channel protection film 26 is formed by applying the CVD method. The material of the channel protection film 26 is Si
N, SiO ₂ , or the like can be used.

4 (A). 4- (1) By applying the spin coating method, a resist is applied on the channel protective film 26 to form a resist film 27.

See FIG. 4B. 4- (2) The resist film 27 is exposed and developed by applying a resist process in the lithography technique.
The pattern of the actual channel protective film in the TFT is formed. No resist film remains on the gate terminal portion and the drain terminal portion.

5 (A) 5- (1) The channel protective film 26 is etched using the resist film 27 as a mask by applying a wet etching method using a hydrofluoric acid-based etching solution as an etchant. . The channel protective film does not remain on the gate terminal portion and the drain terminal portion.

5 (B) 5- (2) The resist film 27 which is a mask when the channel protective film 26 is etched is peeled off. Thereby, the channel protective film 26 is exposed.

6 (A) 6- (1) A source / drain electrode material film 28 is formed on the entire surface. As the source / drain electrode material, a conductive substance such as Al, Ti or Cr can be used, and as a film forming technique, a vacuum vapor deposition method, a sputtering method, a CVD method or the like can be applied.

6- (2) By applying the spin coating method, a resist is applied on the source / drain electrode material film 28 to form a resist film 29.

7 (A) 7- (1) The resist film 29 is exposed and developed by applying a resist process in the lithography technique.
A pattern of a source electrode, a drain electrode, and a drain electrode / wiring which is a drain bus line is formed.
No resist film remains on the gate terminal portion.

7 (B) 7- (2) The source / drain electrode material film 28 is etched by using the patterned resist film 29 as a mask, and T
In the FT portion, the source electrode 28S and the drain electrode 28D
In the drain terminal portion, the drain electrode / wiring 28L is formed. The source / drain electrode material film 28 in the gate terminal portion is completely removed.

See FIG. 8A. 8- (1) The resist film 29 which is a mask when the source / drain electrode material film 28 is etched is removed by immersing it in a resist stripping solution. According to this, the source electrode 2
8S and drain electrode 28D and drain electrode / wiring 28
L is expressed.

See FIG. 8B. 8- (2) The passivation film 30 is formed on the entire surface by applying the CVD method. As a material for the passivation film 30, SiN, SiO ₂ or the like can be used. In addition, in order to make a reflective electrode to be formed later an irregular reflection surface, the passivation film in the region corresponding to the pixel electrode may be subjected to a rough surface treatment.

9 (A) 9- (1) By applying the spin coating method, a resist is applied on the passivation film 30 to form a resist film 31.

See FIG. 9B. 9- (2) The resist film 31 is exposed and developed by applying a resist process in the lithography technique.
The through hole forming opening 31A to the source electrode is formed in the TFT portion, and the gate electrode / wiring 22L is formed in the gate terminal portion.
An opening 31B for forming a through hole is formed therein, and an opening 31C for forming a through hole is formed in the drain terminal portion to the drain electrode / wiring 28L.

See FIG. 10A. 10- (1) The passivation film 30 is etched using the resist film 31 as a mask by applying a wet etching method using a hydrofluoric acid-based etching solution as an etchant. , Through hole 30A, through hole 3
0B and through hole 30C are formed.

See FIG. 10B. 10- (2) Through-hole 30A, through-hole 30B, through-hole 30C by being immersed in a resist stripping solution.
The resist film 31 used as a mask when forming is removed.

11 (A) 11- (1) A gate / drain terminal material film 32 is formed on the entire surface. The gate / drain terminal material film 32 has ITO (in
aluminum (tin tin oxide) may be used, and
As a film forming technique, a vacuum vapor deposition method, a sputtering method, or the like can be applied.

The gate / drain terminal material film 32 is patterned later. This is necessary for improving the soldering strength when connecting the gate terminal and the drain terminal to an external element. is there.

See FIG. 11B. 11- (2) By applying the spin coating method, a resist is applied on the gate / drain terminal material film 32 to form a resist film 33.

See FIG. 12A. 12- (1) The resist film 33 is exposed and developed by applying a resist process in the lithography technique.
A pattern of an electrode for connecting to an external element in the gate terminal portion and a pattern of an electrode for connecting to an external element in the drain terminal portion are formed. No resist film remains on the TFT portion.

See FIG. 12B. 12- (2) The gate / drain terminal material film 32 is etched using the patterned resist film 33 as a mask, and the connecting electrode 32G made of an ITO film is formed in the gate terminal portion.
Similarly, the connection electrodes 32D are similarly formed at the drain terminal portions.

To etch the gate / drain terminal material film 32, a wet etching method using oxalic anhydride as an etchant or a dry etching method using FeCl ₂ as an etching gas can be applied.

See FIG. 13A. 13- (1) The resist film 33, which is a mask when the gate / drain terminal material film 32 is etched, is removed by immersing it in a resist stripping solution. Accordingly, the connecting electrode 3
Although the 2G and the connection electrode 32D are exposed, nothing remains on the TFT portion, so that only the passivation film 30 having the through hole 30A is present on the source electrode 28S.

13B. 13- (2) By applying the spin coating method, a resist is applied on the entire surface to form a resist film 34 having a thickness of, for example, about 8000 [Å].

See FIG. 14A. 14- (1) By applying a resist process in the lithography technique, the resist film 34 is exposed and developed to form an opening 34A, which is formed in the passivation film 30. Through hole 3 which is exposed to a part of the source electrode 28S
Show 0A again. The gate terminal portion and the drain terminal portion are covered with the resist film 34.

See FIG. 14 (B). 14- (2) By applying the vacuum deposition method with the resist film 34 left, the thickness A is, for example, about 5000 [Å].
A reflective electrode film 35 of 1 is formed. The reflective electrode film 35 is provided at least for the pixel electrode 14 in order to allow irregular reflection.
The surface corresponding to the area may be roughened.

The technique for forming the reflective electrode film 35 is as follows.
Besides the vacuum deposition method, a sputtering method, a CVD method, or the like can be applied. The thickness of the reflective electrode film 35 is desirably 3000 [Å] or more. still,
The reflective electrode film 35 has a bad step coverage because the resist film 34 is formed thick.

15- (1) The resist film 34 is dipped in a resist stripping solution.
Are removed together with the reflective electrode film 35.

As a result, the reflective electrode 35R in contact with the source electrode 28S was formed in the TFT portion, but the reflective electrode film 35 was entirely on the resist film 34 in the gate terminal portion and the drain terminal portion. Therefore, it is removed completely and the connection electrodes 32G and 32D are exposed.

The TFT substrate manufactured in this way is
Both the counter substrate and the liquid crystal are assembled as a reflective liquid crystal display device, but corrosion and dissolution due to the battery effect do not occur.

16 and 17 are cross-sectional side views of a main part of the TFT substrate in the process steps for explaining the process of manufacturing the TFT substrate used in the reflective liquid crystal display device according to the second embodiment of the present invention. It is a diagram and will be described below with reference to this diagram. The same symbols as those used in FIGS. 1 to 15 represent the same parts or have the same meanings.

The steps up to the structure of the TFT substrate shown in FIG. 16 are the same as those of the embodiment of the present invention described with reference to FIGS. 1 to 13A except the formation of the reflective electrode film 35. Since they are exactly the same, it is recommended to refer to those figures and explanations.

16 (A) 16- (1) By applying a resist process in the lithography technique, the resist film 34 is exposed and developed to form openings 34A and 34B, and the openings 34A are formed. Inside the passivation film 30, a source electrode 2 is formed.
The through hole 30A through which a part of 8S is seen is exposed again. The gate terminal portion and the drain terminal portion are covered with the resist film 34.

16B. 16- (2) By applying the vacuum deposition method with the resist film 34 left, the thickness A is, for example, about 5000 [Å].
A reflective electrode film 35 of 1 is formed. The reflective electrode film 35 is provided at least for the pixel electrode 14 in order to allow irregular reflection.
The surface corresponding to the area may be roughened.

The technique for forming the reflective electrode film 35 is as follows.
Besides the vacuum deposition method, a sputtering method, a CVD method, or the like can be applied. The thickness of the reflective electrode film 35 is desirably 3000 [Å] or more. still,
Also in this case, since the resist film 34 is formed thick in the reflective electrode film 35, its step coverage is in a bad state.

17- (1) The resist film 34 is dipped in a resist stripping solution.
Are removed together with the reflective electrode film 35.

Accordingly, in the TFT portion, the reflective electrode 35R in contact with the source electrode 28S and the light shielding film 3 are formed.
5C was formed, but in the gate terminal portion and the drain terminal portion, since the entire reflective electrode film 35 was on the resist film 34, it was completely removed and the connection electrode 32G was formed.
And 32D are represented.

The TFT substrate manufactured in this way is
Similar to the first embodiment, both the counter substrate and the liquid crystal are assembled as a reflection type liquid crystal display device, but corrosion and dissolution due to the battery effect do not occur, and the presence of the light shielding film 35C prevents light leakage. Since the malfunction of the TFT due to the above is suppressed, it is not necessary to form a black matrix on the counter substrate side, and the aperture ratio can be improved.

The present invention is not limited to the above embodiment, and many other modifications can be realized.
The surface of the reflective electrode film 35 is roughened so as to allow diffuse reflection, but the surface of the reflective electrode film 35 may be patterned to form the reflective electrode 35R and then roughened.

[0090]

In the reflective liquid crystal display device according to the present invention, when a TFT substrate is manufactured, the TFT portion is covered with a passivation film having a through hole for exposing a part of the source electrode. , The connection electrode is exposed at the gate terminal portion, and the connection electrode is exposed at the drain terminal portion, a resist film is formed on the entire surface, and the resist film is exposed and developed to open the opening of the reflective electrode pattern. Then, a reflective electrode film is formed on the resist film, and the resist film is peeled off together with the reflective electrode film on the resist film to form a reflective electrode in contact with the source electrode.

By adopting the above structure, the resist film is never developed in the state where the reflective electrode film and the connecting electrode are in contact with each other.
In addition, even when the connecting electrodes in the gate terminal portion and the drain terminal portion are made of ITO, respectively, corrosion and dissolution due to the battery effect do not occur, and the TFT array is used. The manufacturing yield of the controlled reflective liquid crystal display device is improved.

[Brief description of drawings]

FIG. 1 is a side sectional view showing a main part of a TFT substrate at a process step for explaining a process for manufacturing a TFT substrate used for a reflective liquid crystal display device according to a first embodiment of the present invention.

FIG. 2 is a side sectional view showing an essential part of a TFT substrate at a process step for explaining a process of manufacturing a TFT substrate used for a reflective liquid crystal display device according to a first embodiment of the present invention.

FIG. 3 is a side sectional view showing an essential part of a TFT substrate in a process key part for explaining a process of manufacturing a TFT substrate used for a reflective liquid crystal display device which is a first embodiment of the present invention.

FIG. 4 is a side sectional view showing an essential part of a TFT substrate in a process key part for explaining a process of manufacturing a TFT substrate used for a reflective liquid crystal display device which is a first embodiment of the present invention.

FIG. 5 is a side sectional view showing an essential part of a TFT substrate in a process key part for explaining a process of manufacturing a TFT substrate used for a reflective liquid crystal display device which is a first embodiment of the present invention.

FIG. 6 is a side sectional view showing an essential part of a TFT substrate in a process key part for explaining a process of manufacturing a TFT substrate used for a reflective liquid crystal display device which is a first embodiment of the present invention.

FIG. 7 is a side sectional view showing a main part of a TFT substrate in a process key part for explaining a process of manufacturing a TFT substrate used for a reflective liquid crystal display device which is a first embodiment of the present invention.

FIG. 8 is a side sectional view showing an essential part of a TFT substrate at a process key point for explaining a process of manufacturing a TFT substrate used for a reflective liquid crystal display device according to the first embodiment of the present invention.

FIG. 9 is a cross-sectional side view showing the main part of the TFT substrate in the process steps for explaining the process of manufacturing the TFT substrate used in the reflective liquid crystal display device according to the first embodiment of the present invention.

FIG. 10 is a side sectional view showing an essential part of a TFT substrate in a process essential part for explaining a process of manufacturing a TFT substrate used for a reflective liquid crystal display device which is a first embodiment of the present invention.

FIG. 11 is a side sectional view showing a main part of a TFT substrate in a process key part for explaining a process of manufacturing a TFT substrate used for a reflective liquid crystal display device which is the first embodiment of the present invention.

FIG. 12 is a side sectional view showing an essential part of a TFT substrate at a process essential part for explaining a process for manufacturing a TFT substrate used for the reflective liquid crystal display device according to the first embodiment of the present invention.

FIG. 13 is a cross-sectional side view showing the main part of the TFT substrate in the process steps for explaining the process for manufacturing the TFT substrate used in the reflective liquid crystal display device according to the first embodiment of the present invention.

FIG. 14 is a cross-sectional side view showing the main part of the TFT substrate in the process steps for explaining the process of manufacturing the TFT substrate used in the reflective liquid crystal display device according to the first embodiment of the present invention.

FIG. 15 is a side sectional view showing an essential part of a TFT substrate in a process key part for explaining a process of manufacturing a TFT substrate used for the reflection type liquid crystal display device which is the first embodiment of the present invention.

FIG. 16 is a cross-sectional side view showing a main part of a TFT substrate at a process step for explaining a process for manufacturing a TFT substrate used for a reflective liquid crystal display device which is a second embodiment of the present invention.

FIG. 17 is a side sectional view showing an essential part of a TFT substrate at a process essential part for explaining a process for manufacturing a TFT substrate used for a reflective liquid crystal display device which is a second embodiment of the present invention.

FIG. 18 is a plan view of relevant parts showing a TFT substrate in a standard reflective liquid crystal display device.

FIG. 19 is an enlarged plan view of a part of the TFT region shown in FIG.

FIG. 20 is an enlarged plan view of an essential part of the terminal portion shown in FIG.

FIG. 21 is a side sectional view showing an essential part of a TFT substrate at a process essential part for explaining a process for manufacturing the TFT substrate described with reference to FIGS. 18 to 20.

22 is a fragmentary side view showing the TFT substrate in the process key point for explaining the process of manufacturing the TFT substrate described with reference to FIGS. 18 to 20; FIG.

FIG. 23 is a side sectional view showing an essential part of a TFT substrate in a process essential part for explaining a process of manufacturing the TFT substrate described with reference to FIGS. 18 to 20.

FIG. 24 is a side view of an essential part showing an enlarged view of a portion surrounded by a broken line circle in FIG. 21.

[Explanation of symbols]

 21 Insulating Transparent Substrate 22 Gate Electrode Material Film 22G Gate Electrode 22L Gate Electrode / Wire 23 Resist Film 24 Gate Insulating Film 25 Active Layer 26 Channel Protective Film 27 Resist Film 28 Source / Drain Electrode Material Film 28S Source Electrode 28D Drain Electrode 28L Drain Electrodes / wiring 29 Resist film 30 Passivation film 30A Through hole 30B Through hole 30C Through hole 31 Resist film 31A Through hole forming opening 31B Through hole forming opening 31C Through hole forming opening 32 Gate drain terminal Material film 32G Connection electrode 32D Connection electrode 33 Resist film 34 Resist film 35 Reflective electrode film 35R Reflective electrode 35C Light-shielding film 35P Pin hole 36 Resist film

 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Kazutaka Hanaoka 1015 Kamiodanaka, Nakahara-ku, Kawasaki City, Kanagawa Prefecture, Fujitsu Limited (72) Inventor Hideaki Tsuda 1015, Kamedotachu, Nakahara-ku, Kawasaki, Kanagawa Prefecture Fujitsu Limited ( 72) Inventor Hideo Senda, 1015 Kamiodanaka, Nakahara-ku, Kawasaki-shi, Kanagawa, within Fujitsu Limited

Claims (3)

[Claims] 1. In the process of manufacturing a TFT substrate, a through electrode in which a part of the source electrode is exposed in the TFT portion.
A step of forming a resist film on the entire surface in a state of being covered with a passivation film in which holes are formed, the connection electrode is exposed in the gate terminal portion, and the connection electrode is exposed in the drain terminal portion; A step of exposing and developing the resist film to form an opening of a reflective electrode pattern that exposes the through hole; and a step of forming a reflective electrode film on the resist film including the opening of the reflective electrode pattern. Then, a step of peeling off the resist film together with the reflective electrode film existing thereon to form a reflective electrode in contact with the source electrode is included. .. 2. A step of exposing and developing a resist film to form an opening of a reflection electrode pattern and an opening of a light shielding film pattern which expose a through hole, and then an opening of the reflection electrode pattern and a light shielding film pattern. A step of forming a reflective electrode film on the resist film including the opening, and then peeling the resist film together with the reflective electrode film thereabove to prevent light leakage to the reflective electrode and the TFT in contact with the source electrode. The method of manufacturing a reflection type liquid crystal display device according to claim 1, further comprising a step of simultaneously forming a light shielding film to suppress. 3. The method of manufacturing a reflective liquid crystal display device according to claim 1, wherein the material of the connecting electrode is ITO and the material of the reflective electrode is Al.