JPH08211423A - Deflector and image shift type image pickup device formed by using the same - Google Patents

Abstract

PURPOSE: To deflect light without using mechanical vibration, to enable low-voltage driving and reduce a cost by holding electrooptical liquid crystals with transparent electrodes, impressing voltage between these transparent electrodes and arranging a deflecting element in such a manner that an electric field parallel with an optical axis direction impressed on the electrooptical crystals. CONSTITUTION: This deflector has the electrooptical crystal C1 which is a parallel flat plate and a DC driving voltage 2 for impressing the voltage on the transparent electrodes T1 and T2 formed across the electrooptical crystal C1 in such a manner that the former attains high potential and the latter low potential. The optical path is changed by impressing the electric field in parallel with the optical axis direction. In such a case, the refractive index ellipsoid possessed by the crystal is changed by the electric field impression to induce rotation of the refractive index ellipsoid in particular, by which the propagation direction of an ordinary ray or extraordinary ray is changed and the imaging position to the image pickup element is shifted in proportion to impressed voltage. The light is thus deflected by arranging the deflecting element 1 in such a manner as to impress the electric field in parallel with the optical axis direction on the electrooptical crystal C1 .

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a deflecting device used in a TV camera, an image scanner or the like and an image shift type image pickup device using the same, and more specifically to a deflecting device having an electro-optic crystal sandwiched between transparent electrodes. The present invention relates to a deflecting device including an element and a driving unit for the element, and an image shift type imaging device that uses the deflecting device to shift an image formed on the image sensor relative to the image sensor.

[0002]

2. Description of the Related Art The world of images is moving toward higher definition as represented by HDTV, and image pickup devices such as CCDs are required to be smaller and have higher resolution. However, high-definition CCD image sensors require advanced semiconductor microfabrication technology, which increases costs due to increased capital investment and reduced yield. Also, the volume of one cell becomes extremely small due to the high density of the CCD image pickup device, and the shot noise cannot be ignored due to the lowered signal level.

Therefore, a technique for improving the resolution while keeping the degree of integration of the image pickup device unchanged is being studied. The most effective method is to increase the resolution by modulating the relative position between the image sensor and the subject image. First, the image information when the relative position is not shifted is stored in the memory, and then the image of the subject on the image pickup device is shifted by half the image pitch to capture the image information. Image information having double the resolution can be obtained from both image information. A deflecting device is used to shift the image forming position.

As the deflection device of the prior art, there are a mechanical system and a non-mechanical system. The mechanical method uses a voltage element or the like to apply mechanical vibration to an optical system, and there are a method of changing an optical path in the optical system, a method of moving an image pickup device such as a CCD, and a method of moving an object. For changing the optical path in the optical system, as shown in FIG. 12, a transparent glass plate 51 is inserted into the optical system composed of the lens 50 and the image pickup device 52, and the glass plate 51 is tilted to form an image. A method of shifting (see Japanese Patent Laid-Open No. 63-284980), a prism having a structure in which a transparent liquid having a refractive index is filled between two transparent flat plates, and the periphery is configured like a bellows so that the apex angle can be changed. Method of arranging in optical path, method of oscillating mirror to shift reflection direction and shift image formation
No. 93678) is proposed. As a method of moving the image pickup device itself, as shown in FIG. 13, there is a method of moving the image pickup device 52 on a piezoelectric actuator 53 (see Japanese Patent Publication No. 2-45874). The method of moving the subject is to vibrate the original with a diaphragm or the like (Japanese Patent Laid-Open No. 3-1732
No. 77) is proposed.

The non-mechanical method does not apply a mechanical force, and two methods are roughly considered. One is to utilize the difference between the propagation directions of ordinary and extraordinary rays in the birefringent plate, as shown in FIG. The incident light is made into parallel light by the lens 50, the polarization plane of the light is aligned in one direction by the polarizing plate 53, and then the polarization plane is passed through the rotatable element 54, and is further imaged on the image pickup element 52 through the birefringent plate 55. The birefringent plate 55 has different optical paths depending on the ordinary light and the extraordinary light. That is, when the plane of polarization is rotated by 90 degrees, the optical path is changed and the image formation can be displaced. An element that can electrically change the anisotropy of the refractive index is used to rotate the plane of polarization, and it has been proposed to use a liquid crystal and an electro-optical effect. Since the mechanical system can continuously displace the image formation, n
It is possible to achieve n times higher resolution by displacing each of them by one-half, but the non-mechanical method by rotation of the polarization plane uses ordinary light to make use of the optical path difference of extraordinary light, resulting in up to 2 times higher resolution. It is possible (see JP-A-62-157482). In another method, as shown in FIG. 15, an electro-optic crystal is used by using a wedge-shaped element 56 in which crystal axes are bonded in opposite directions.
An electric field is applied perpendicularly to the optical axis to induce a continuous change in the refractive index in the vertical direction, thereby changing the propagation direction of light (JP-A-62-15977 and JP-A-62-159581). See the bulletin).

[0006]

The mechanical method is disadvantageous in that mechanical vibrations given to the optical system, the mechanical system, and the electronic circuit system adversely affect long-term reliability and generate vibration noise. Has been done. Moreover, since the piezoelectric element has hysteresis, it is difficult to set the timing for extracting the image signal.

Further, in the non-mechanical method, since the displacement amount of the rotation of the polarization plane using the electro-optic crystal or the liquid crystal is constant, it is impossible to increase the resolution more than twice in one direction, and the birefringence is further increased. The disadvantage is that the cost is high because a plate is required. The method of using a wedge-shaped element in which crystal axes are bonded to each other in opposite directions without using a birefringent plate has a problem that a high voltage is required because the voltage application direction is perpendicular to the optical axis. It was

An object of the present invention is to provide a deflecting device which deflects light without using mechanical vibration, is driven at a low voltage, and is inexpensive. Another object of the present invention is to provide an image shift type image pickup device which can obtain a high-definition image without increasing the resolution of the image pickup device by using this deflecting device.

[0009]

In order to achieve the above object, the invention of claim 1 applies a voltage between a deflection element having a structure in which an electro-optic crystal is sandwiched between transparent electrodes and the transparent electrode,
Drive means for applying an electric field to the electro-optic crystal, wherein the deflection element is arranged to apply an electric field parallel to the optical axis direction to the electro-optic crystal to deflect light. It is a deflection device.

According to a second aspect of the present invention, the deflecting device according to the first aspect, the image pickup device, and the control means for controlling the operation of the driving means of the deflecting device according to the timing of the image pickup are provided, and the control means is provided. An image shift type image pickup device characterized in that an image is formed on the image pickup device depending on whether or not a voltage is applied to the transparent electrode of the deflecting device and the image formation is shifted relative to the image pickup device. is there.

According to a third aspect of the present invention, the electro-optic crystal is laminated with the transparent electrodes sandwiched therebetween, and the crystal axes of the odd-numbered electro-optic crystal and the even-numbered electro-optic crystal are arranged in a mirror image relationship with each other. An element, a driving means for applying a voltage between the adjacent odd-numbered transparent electrodes and even-numbered transparent electrodes to apply a reverse electric field to the adjacent electro-optic crystal,
And a deflection device arranged to apply an electric field parallel to the optical axis direction to the electro-optic crystal to deflect light.

According to a fourth aspect of the present invention, the deflecting device according to the third aspect, the image pickup element, and the control means for controlling the operation of the driving means of the deflecting device according to the timing of image pickup are provided, and the control means is provided. An image shift type image pickup device characterized in that an image is formed on the image pickup device depending on whether or not a voltage is applied to the transparent electrode of the deflecting device and the image formation is shifted relative to the image pickup device. is there.

[0013]

In the deflecting device of the first aspect, an electric field parallel to the optical axis direction is applied to the electro-optic crystal of the deflecting element by the driving means to rotate the index ellipsoid. This changes the propagation direction of light and shifts the image forming position in proportion to the applied voltage. Moreover, the voltage can be reduced as compared with the conventional method in which the voltage is applied perpendicularly to the optical axis.

In the deflecting device of claim 3, the deflecting element has a structure in which electro-optical crystals are laminated so as to be sandwiched by transparent electrodes,
The crystal axes of the odd-numbered electro-optic crystal and the even-numbered electro-optic crystal are arranged in a mirror image relationship with each other, and a voltage is applied between the adjacent odd-numbered transparent electrode and even-numbered transparent electrode, respectively. The deflection element is arranged to apply an electric field parallel to the direction to the electro-optic crystal. Therefore, in each electro-optic crystal, the index ellipsoid rotates in the same direction. That is, the light incident on each electro-optical crystal is displaced in the same direction, and a large displacement amount can be obtained as compared with the case where there is one electro-optical crystal.
Therefore, in order to obtain the same displacement amount, it is sufficient to apply a low voltage.

In the image shift type image pickup device according to any one of claims 2 and 4, the control means is used to define the image shift type image pickup device.
When the voltage is not applied to the deflecting device, the image is taken, and when the voltage is applied to the deflecting device, the image is taken. The image forming position of the deflecting device is displaced depending on whether or not a voltage is applied. Therefore, the image formation on the image pickup device and the relative position of the image pickup device can be displaced, and the high resolution can be achieved without increasing the resolution of the image pickup device itself. Moreover, the image formation position can be freely displaced by the applied voltage, and the applied voltage can be reduced.

[0016]

The present invention will be described below based on embodiments with reference to the drawings. FIG. 1 is a schematic view showing an embodiment of a deflection device according to the present invention. In this deflecting device, a deflecting element 1 including a parallel plate electro-optical crystal C ₁ and transparent electrodes T ₁ and T ₂ formed with the electro-optical crystal C ₁ sandwiched therebetween, the transparent electrode T ₁ is at a high potential, and the transparent electrode T ₂ is at a low potential. And a direct-current drive voltage 2 for applying a voltage so as to have a potential. Where electro-optic crystal C
₁ is, for example, LiNbO ₃ (hereinafter LN), BaTiO 3
₃ (hereinafter BaT), KTa _0.35 Nb _0.65 O ₃ (hereinafter KT
N) or KD ₂ PO ₄ (hereinafter DKDP: D at the beginning means deuteration) as a single crystal. And LN, Ba
In the case of a single crystal of T or KTN, for example, it is cut into a rectangular parallelepiped having a crystal axis of 1 mm in the a-axis direction, 10 mm in the b-axis direction, and 10 mm in the c-axis direction.
The TO film is formed by the sputtering method. In the case of DKDP single crystal, for example, 1 mm in the c-axis direction, 10 mm in the a-axis direction, b
A rectangular parallelepiped having an axial direction of 10 mm is cut out, and an ITO film is formed as a transparent electrode on both cut-out surfaces perpendicular to the c-axis by a sputtering method.

Now, the principle of operation by which the image forming position is displaced by this deflecting device will be described below. The electro-optical effect is a kind of second-order nonlinear optical effect, and when a voltage is applied to a crystal exhibiting the electro-optical effect, the refractive index of the crystal and its anisotropy change. As described in the section of the related art, conventionally, in polarization by the electro-optic effect, a method of applying an electric field perpendicular to the traveling direction of light has been studied. However, when used in an image pickup device, the electro-optic crystal needs to have a larger area than the light receiving surface of the CCD, and a high voltage is required to apply an electric field perpendicularly to this surface. On the other hand, the present invention applies an electric field parallel to the optical axis direction to displace the optical path. By changing the refractive index ellipsoid of the crystal by applying an electric field, especially by inducing rotation of the refractive index ellipsoid,
By changing the propagation direction of the extraordinary light or the ordinary light, the image forming position on the image sensor is shifted in proportion to the applied voltage.

FIG. 2 is an explanatory view showing the rotation of the index ellipsoid. (a) is the case where no voltage is applied to the crystal,
(b) is a case where a voltage is applied to the crystal. The polarization plane dependence on the phase velocity of light traveling in the crystal is expressed as an index ellipsoid. First, consider the case where the orthogonal coordinate axes are x, y, z and no voltage is applied. If the x direction is the optical axis direction,
The refractive index ellipsoid can be expressed as η _xx · x ² + η _yy · y ² + η _zz · z ² + η _yz · yz + η _xz · xz + η _xy · xy = 1 (1).

As shown in FIG. 2, the refractive index ellipsoid is cut along a plane perpendicular to the direction (x direction) of the wavefront vector k of light traveling in the crystal and passing through the origin. At this time, the major axis and minor axis directions of the cut surface of the index ellipsoid serve as polarization planes, and the perpendicular direction to the tangent plane at the point where the major axis and the minor axis contact the index ellipsoid becomes the electric field vector E of light. . The magnetic field vector H of light is perpendicular to the electric field vector E of light and the wavefront vector k, and the traveling direction of light is the pointing belt S.
The direction is (the outer product of the electric field vector and the magnetic field vector). The fourth, fifth, and sixth terms of Expression (1) represent the inclination of the index ellipsoid with respect to the principal axis.

When an electric field E _k is applied in the direction of the wavefront vector k of light, the following equation holds. η _ii (E) = 1 / n _i ² + r _ik E _k (i, k = x, y, z) (2) η _ij (E) = r _ijk E _k (i ≠ j) (3) where n _i is the refractive index in the principal axis direction. When the electric field is applied, the index ellipsoid rotates due to the value of the equation (3), and the tilt occurs with respect to the principal axis ((b) of FIG. 2).

For example, if η _xz (E) = r _xzx E _x ≠ 0, the refractive index ellipsoid rotates in the xz plane by applying an electric field in the x direction, and has a wavefront vector in the x direction and in the xz plane. The light having a plane of polarization has a wavefront vector k ′ tilted in the xz plane, and the pointing belt S ′ tilts. Therefore, since the electric field can be changed by applying an electric field parallel to the light traveling direction, the electro-optic crystal can be thinned and the voltage can be reduced.

The displacement amount of image formation was measured using the deflecting device shown in FIG. FIG. 3 shows an explanatory diagram of the displacement amount measuring system. The first lens 3 is arranged in the front stage of the deflecting element 1, and the knife edge 4, the piezo drive device 5 for moving the knife edge 4 up and down, the second lens 6 and the photodetector 7 are arranged in the rear stage thereof. First
After passing through the deflecting element 1, the parallel rays are once converged by the lens 3 at the focal point set at the tip of the knife edge 4. The light that has converged and then diffused is converged on the photodetector 7 by the second lens 6. Depending on the voltage applied to the electro-optic crystal C ₁ ,
As described above, the focal position of the first lens 3 is vertically displaced by rotating the refractive index ellipsoid and changing the traveling direction of light. The knife edge 4 is moved up and down by the piezo drive device 5, the light amount is detected by the photodetector 7, and the data processing device 8
The amount of focus displacement is detected with.

The above-mentioned electro-optic crystals LN, BaT, KT
FIGS. 4 to 7 show the relationship between the applied voltage and the amount of displacement of the focus position measured by the above-mentioned knife edge method by passing a laser through a deflection device composed of N and DKDP. It was confirmed that the amount of displacement increased in each crystal almost in proportion to the applied voltage. L
In the case of N, a displacement of approximately 5.4 μm is applied by applying a voltage of 20 kV using a HeNe laser (633 nm) (see FIG. 4), and in the case of BaT, displacement of approximately 6.4 μm at 400 V using an argon ion laser (514 nm). (See Fig. 5), HeNe for KTN
Approximately 8. by applying a voltage of 100V using a laser (633nm).
A displacement of 3 μm was obtained (see FIG. 6). DKDP is about 6.5 at 10 kV using an argon ion laser (514 nm).
A displacement of μm was obtained (see FIG. 7). In this embodiment, the same effect can be obtained even if the crystal axes a and b are exchanged.

FIG. 8 is a schematic view showing another embodiment of the deflecting device. This deflecting device includes a deflecting element 1 in which transparent electrodes T ₁ , T ₂ and T ₃ are formed so as to sandwich electro-optical crystals C ₁ and C _2.
1 and a driving voltage 12 for applying a voltage to the transparent electrodes T ₁ , T ₂ , and T ₃ . Here, the electro-optic crystals C ₁ and C ₂ are, for example, a single crystal of KTN, 1 mm in the a-axis direction, b
It is cut into a rectangular parallelepiped having an axial direction of 10 mm and a c-axis direction of 10 mm. Then, an ITO film is formed as a transparent electrode on both surfaces of the electro-optic crystal C ₁ cut out perpendicular to the a-axis by a sputtering method. The electro-optic crystals C ₁ and C ₂ are superposed so that the a-axes are opposite to each other and the transparent electrode T ₂ is sandwiched therebetween, and they are bonded by a hot press. A transparent electrode T ₃ is formed on the surface of the electro-optic crystal C ₂ facing the transparent electrode T ₂ to form a deflection element. A voltage is applied so that the transparent electrodes T ₁ and T ₃ have a high potential and the transparent electrode T ₂ has a low potential.

In the electro-optic crystals C ₁ and C ₂ , the a-axes are arranged in opposite directions, and the electric fields are applied in opposite directions. Therefore, in the electro-optic crystals C ₁ and C ₂ , the index ellipsoids rotate in the same direction. That is, the lights incident parallel to the a-axis are displaced by the same distance in the same direction, and a displacement amount twice as large as that when one electro-optic crystal is provided can be obtained. Therefore, in order to obtain the same amount of displacement, it is sufficient to apply 1/2 voltage.

FIG. 9 shows the relationship between the applied voltage and the amount of displacement of the focus position measured by the knife edge method measuring system shown in FIG. A displacement of about 8.3 μm was obtained by applying a voltage of 50 V using a HeNe laser (633 nm), and the voltage was 1 when compared with the case where the electro-optic crystal in FIG. 1 was a single layer.
It becomes / 2, and the voltage can be lowered.

The case of two layers has been described above, but the number of layers is not limited to this, and three or more layers are also possible. A schematic diagram of this example is shown in FIG. In this deflecting device, the transparent electrodes T _{1 to} T _{n + 1} are formed so as to sandwich the electro-optical crystals C _{1 to} C _n , and these are laminated and integrated. Where electro-optic crystal C
_{1 to} C _n have the same material and shape as those in FIG. 8, and the transparent electrode T ₁
.About.T _{n + 1} is the same material. The crystal axes of the odd-numbered electro-optic crystal and the even-numbered electro-optic crystal are arranged in a mirror image relationship with each other. That is, they are arranged so that the a-axes of the adjacent electro-optic crystals are opposite to each other. Further, a voltage is applied from the drive voltage 22 so that the odd-numbered transparent electrodes have a high potential and the even-numbered transparent electrodes have a low potential.

Adjacent electro-optic crystals are arranged so that the a-axes are in opposite directions, and the electric fields are applied in opposite directions. Therefore, the electro-optic crystal C ₁
In -C _n, the refractive index ellipsoid will rotate in the same direction. That is, the lights incident in parallel to the a-axis are displaced by the same distance in the same direction, and an amount of displacement n times that obtained when one electro-optical crystal is obtained is obtained. Therefore, in order to obtain the same amount of displacement, it is sufficient to apply a voltage of 1 / n.

FIG. 11 shows an embodiment of an image shift type image pickup device using the deflecting device of FIG. CCD image sensor 33
1/4 inch pixel with a horizontal pixel pitch of 4.8 μm is used. CCD image sensor 33
Install the deflection device immediately before. This deflector is a KTN
A deflection element 31 comprising a crystal C ₁ and transparent electrodes T ₁ and T ₂ ,
And a drive unit 32 for applying a voltage to the transparent electrode.
A polarizer 34 is placed on the incident light side of the deflecting element 31 to allow light having a polarization plane parallel to the c-axis to pass therethrough. Further, a lens 35 is arranged on the incident light side of the polarizer to collimate the light. The timing control unit 36 outputs the detection signals of the image pickup device 33 when the voltage of the drive unit 32 is not applied and when the voltage is applied to the image processing unit 39 via the first image memory 37 and the second image memory 38.
Output to. It is output as a video signal.

A CCD is passed through the deflection element without applying a voltage.
The image is captured by the image sensor 33, and the image information is stored in the first image memory 3
Accumulate to 7. Next, 28 V is applied to the deflection element 31, the image forming position of the image is shifted by 2.4 μm in the horizontal direction, the CCD image pickup element 33 picks up the image, and the image information is stored in the second image memory 38. By alternately outputting the horizontal data of the first and second image memories 37 and 38 in the cylinder by the image processing unit 39, a high-resolution video output of twice the horizontal direction can be obtained.

The resolution in the horizontal direction is important for increasing the resolution for standard televisions, and the effect is sufficient even if the resolution is increased in the horizontal direction, but it is possible to achieve the resolution in the vertical direction at the same time. I have never done it. In order to increase the resolution in both the horizontal and vertical directions using the present deflection element, a vertical element in which the crystal axis is rotated by 90 ° about the optical axis with respect to the element after the horizontal deflection element is used. Deploy. In this case, a voltage application of about 1 kV is required for vertical displacement. However, a half-wave plate is inserted between the horizontal deflection element and the vertical deflection element, and the deflection surface is set to 90 °.
By rotating, it can be displaced by applying the same voltage as in the horizontal direction. In this embodiment, the vertical pixel pitch is 5.6 μm, and when a voltage of 32 V is applied, 2.8 μm
A vertical shift of was obtained. This allows horizontal 2
And twice the high resolution in the vertical direction.

The present invention is not limited to the above configuration. Although the deflecting device of the image shift type image pickup device has one electro-optic crystal, it may have a multi-layered electro-optic crystal as shown in FIGS. The material of electro-optic crystal is
Not limited to KTN, LN, BaT, DKDP or the like may be used.

[0033]

According to the deflecting device of the present invention, the electro-optic crystal is sandwiched by the transparent electrodes, a voltage is applied between the transparent electrodes, and an electric field parallel to the optical axis direction is applied to the electro-optic crystal. Since the deflection element is arranged, by rotating the refractive index ellipsoid, the displacement amount of the image formation can be continuously changed according to the applied voltage, and the applied voltage is also applied perpendicularly to the optical axis. In comparison, low voltage can be used. Further, since mechanical vibration is not used, there are advantages that the reliability is high, vibration noise is not generated, and the structure is simple, so that it is inexpensive. Further, the wavelength dependence can be reduced as compared with the conventional device using the rotation of the polarization plane.

Further, in the deflecting device according to the third aspect, the deflecting element is laminated by sandwiching the electro-optical crystal with the transparent electrodes, and the crystal axes of the odd-numbered electro-optical crystal and the even-numbered electro-optical crystal are mirror images of each other. As a structure arranged, by applying a voltage between adjacent odd-numbered transparent electrodes and even-numbered transparent electrodes to apply an opposite electric field to the adjacent electro-optical crystals, the same direction is applied to each electro-optical crystal. Since the image formation is displaced at 1, the voltage can be reduced as compared with one electro-optic crystal.

Since the image shift type image pickup device according to the second and fourth aspects is provided with the control means for controlling the operation of the deflecting device according to the first or third aspect in accordance with the timing of image pickup, the voltage applied to the transparent electrode is applied. With the presence or absence of the above, the positions of the image sensor and the image formation are relatively displaced, and a high-definition image can be obtained without increasing the resolution of the image sensor.

[Brief description of drawings]

FIG. 1 is a schematic view showing an embodiment of a deflecting device according to the present invention.

2A and 2B are explanatory diagrams showing rotation of an index ellipsoid of an electro-optic crystal.

FIG. 3 is an explanatory schematic diagram showing a displacement amount measuring system for image formation.

FIG. 4 is a graph showing a relationship between an image-forming displacement amount and an applied voltage in a deflecting device using an LN as a deflecting element.

FIG. 5 is a graph showing a relationship between a displacement amount of image formation and an applied voltage in a deflection device using BAT as a deflection element.

FIG. 6 is a graph showing the relationship between the displacement amount of image formation and the applied voltage in a deflecting device using KTN as a deflecting element.

FIG. 7 is a graph showing a relationship between a displacement amount of image formation and an applied voltage in a deflecting device using a DKDP as a deflecting element.

FIG. 8 is a schematic view showing another embodiment of the deflecting device according to the present invention.

FIG. 9 is a graph showing a relationship between an image forming displacement amount and an applied voltage in this deflecting device using a KTN as a deflecting element.

FIG. 10 is a schematic view showing still another embodiment of the deflecting device according to the present invention.

FIG. 11 is a schematic view showing an embodiment of an image shift type image pickup device according to the present invention.

FIG. 12 is a schematic view showing a conventional deflecting device by a method of tilting a glass plate.

FIG. 13 is a schematic diagram showing a conventional deflecting device based on a method of moving an image sensor by a piezoelectric actuator.

FIG. 14 is a schematic view showing a conventional deflecting device using an electro-optic crystal and a birefringent plate.

FIG. 15 is a schematic diagram showing a conventional deflection device in which wedge-shaped electro-optic crystals are bonded together.

[Explanation of symbols]

1 deflection element 2 drive voltage C ₁ electro-optic crystal R ₁ , R ₂ , R ₃ transparent electrode

Claims (4)

[Claims] 1. A deflection element having a structure in which an electro-optic crystal is sandwiched between transparent electrodes, and a driving means for applying a voltage between the transparent electrodes to apply an electric field to the electro-optic crystal, the optical element being arranged in an optical axis direction. A deflecting device, wherein the deflecting element is arranged so as to apply a parallel electric field to the electro-optic crystal, and deflects light. 2. The deflecting device according to claim 1, an image pickup element, and a control means for controlling the operation of a driving means of the deflecting device according to the timing of image pickup. The control means makes the deflecting device transparent. An image is formed on the image sensor with and without voltage applied to the electrodes,
An image shift type image pickup device characterized in that the image formation is shifted relative to an image pickup element. 3. A deflection element having a structure in which electro-optic crystals are sandwiched between transparent electrodes and the crystal axes of odd-numbered electro-optic crystals and even-numbered electro-optic crystals are arranged in a mirror image relationship with each other, and are adjacent to each other. A driving means for applying a voltage between the odd-numbered transparent electrodes and the even-numbered transparent electrodes to apply a reverse electric field to the adjacent electro-optic crystal, and to apply an electric field parallel to the optical axis direction to the electric field. A deflecting device, wherein the deflecting element is arranged so as to be applied to an optical crystal and deflects light. 4. A deflection device according to claim 3, an image pickup element, and a control means for controlling the operation of the drive means of the deflection device according to the timing of image pickup, and the control means makes the deflection device transparent. An image is formed on the image sensor with and without voltage applied to the electrodes,
An image shift type image pickup device characterized in that the image formation is shifted relative to an image pickup element.