JPH08197674A - Silicon oxide vapor deposition film - Google Patents
Silicon oxide vapor deposition filmInfo
- Publication number
- JPH08197674A JPH08197674A JP1153495A JP1153495A JPH08197674A JP H08197674 A JPH08197674 A JP H08197674A JP 1153495 A JP1153495 A JP 1153495A JP 1153495 A JP1153495 A JP 1153495A JP H08197674 A JPH08197674 A JP H08197674A
- Authority
- JP
- Japan
- Prior art keywords
- silicon oxide
- film
- vapor deposition
- oxide vapor
- deposition film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
(57)【要約】
【目的】透明バリアフィルムの黄色味等の着色を消去す
ることによって、より透明度を向上させ、真の透明バリ
アフィルムを得ることにある。
【構成】透明なプラスチックフィルム又はシート１に透
明な酸化珪素蒸着膜２を備えた酸化珪素蒸着フィルムに
おいて、僅かに着色された透明な酸化珪素蒸着膜２面に
波長１００〜１０００ｎｍの範囲の光線３を強制的に照
射して得られる着色度の低下した高透明度の酸化珪素蒸
着膜２を備える。
(57) [Summary] [Purpose] To eliminate the coloring such as yellowish color of a transparent barrier film to improve the transparency and obtain a true transparent barrier film. In a silicon oxide vapor deposition film having a transparent plastic film or sheet 1 and a transparent silicon oxide vapor deposition film 2, a slightly colored transparent silicon oxide vapor deposition film 2 surface has a light ray 3 in a wavelength range of 100 to 1000 nm. And a highly transparent silicon oxide vapor deposition film 2 having a reduced degree of coloring obtained by forcibly irradiating with.
Description
【０００１】[0001]
【産業上の利用分野】本発明は、透明なプラスチックフ
ィルム又はシートに酸化珪素による蒸着層を備えた酸化
珪素蒸着フィルムに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a silicon oxide vapor deposition film provided with a vapor deposition layer of silicon oxide on a transparent plastic film or sheet.
【０００２】[0002]
【従来の技術】上記酸化珪素蒸着フィルムは、透明なポ
リエステルフィルムに、珪素酸化物を真空蒸着した透明
なバリアフィルム（酸素等のガス透過度、水蒸気透過度
の少ないフィルム）であり、透明であって温湿度による
バリア性の変動が少ない密封包装用の包材フィルムとし
て利用されている。2. Description of the Related Art The above-mentioned silicon oxide vapor deposition film is a transparent barrier film (a film having low gas permeability of oxygen and the like and low water vapor permeability) obtained by vacuum-depositing silicon oxide on a transparent polyester film. It is used as a packaging material film for hermetically sealed packaging in which the barrier properties due to temperature and humidity are minimal.
【０００３】上記酸化珪素蒸着フィルムは、例えは、透
明性が強く要求される医療医薬品やスナック食品等の包
装材料、また高いガスバリア性や水蒸気バリア性が要求
される医療医薬品やスナック食品、レトルト食品、電子
レンジ用食品等の包装材料、あるいは印刷等による絵付
等において微妙な色合いが必要な包装材料等として多用
されている。The above-mentioned silicon oxide vapor-deposited film is, for example, a packaging material for medical drugs and snack foods which are strongly required to have transparency, and medical drugs, snack foods and retort foods which are required to have high gas barrier properties and water vapor barrier properties. It is often used as a packaging material for foods for microwave ovens, or as a packaging material that requires a delicate color tone in painting or the like by printing or the like.
【０００４】[0004]
【発明が解決しようとする課題】従来の上記酸化珪素蒸
着フィルムは、透明なポリエステルフィルムに、珪素酸
化物を薄膜状に真空蒸着して、透明な酸化珪素（ＳｉＯ
x ；例えばｘ＝１．５〜１．６）の蒸着膜を成膜したも
のであり、透明ではあるが、蒸着面が僅かに黄色味等の
着色を呈している。The conventional silicon oxide vapor-deposited film described above is obtained by vacuum-depositing silicon oxide in a thin film on a transparent polyester film to form a transparent silicon oxide (SiO 2 film).
x : For example, x = 1.5 to 1.6), which is a film formed by vapor deposition and is transparent, but the vapor deposition surface is slightly colored such as yellowish.
【０００５】このため内容物が黄色味掛かって見えたり
して、透明なバリアフィルムとしての利点を生かし切れ
ない場合があった。For this reason, the contents may appear yellowish and the advantages as a transparent barrier film may not be fully utilized.
【０００６】本発明の目的は、透明バリアフィルムの黄
色味等の着色を消去することによって、より透明度を向
上させ、真の透明バリアフィルムを得ることにある。An object of the present invention is to improve the transparency by eliminating coloring such as yellowish color of the transparent barrier film and obtain a true transparent barrier film.
【０００７】[0007]
【課題を解決するための手段】本発明は、透明なプラス
チックフィルム又はシートに透明な酸化珪素蒸着膜を備
えた酸化珪素蒸着フィルムにおいて、僅かに着色された
透明な酸化珪素蒸着膜面に波長１００〜１０００ｎｍの
範囲の光線を強制的に照射して得られる着色度の低下し
た高透明度の酸化珪素蒸着膜を備えることを特徴とする
酸化珪素蒸着フィルムである。DISCLOSURE OF THE INVENTION The present invention is a silicon oxide vapor deposition film comprising a transparent plastic film or sheet provided with a transparent silicon oxide vapor deposition film, and a slightly colored transparent silicon oxide vapor deposition film surface having a wavelength of 100. It is a silicon oxide vapor deposition film characterized by comprising a highly transparent silicon oxide vapor deposition film having a reduced degree of coloring, which is obtained by forcibly irradiating a light ray in the range of up to 1000 nm.
【０００８】[0008]
【実施例】本発明の酸化珪素蒸着フィルムは、図１の側
断面図に示すように、プラスチックフィルム１（又はシ
ート）の少なくとも片面に、酸化珪素（ＳｉＯx ）蒸着
膜２を成膜したものである。EXAMPLE As shown in the side sectional view of FIG. 1, the silicon oxide vapor deposition film of the present invention has a silicon oxide (SiO x ) vapor deposition film 2 formed on at least one surface of a plastic film 1 (or sheet). Is.
【０００９】以下に本発明の酸化珪素蒸着フィルムを、
実施例に従って詳細に説明する。The silicon oxide vapor deposition film of the present invention is described below.
A detailed description will be given according to examples.
【００１０】本発明において、上記プラスチックフィル
ム又はシートとしては、特に限定するものではなく、ポ
リエチレンテレフタレート（ＰＥＴ）、ポリブチレンテ
レフタレート、ポリエチレン−２，６−ナフタレート等
のポリエステル、あるいはポリアミド、ポリイミド、ポ
リアクリロニトリル、ポリカーボネート、ポリスチレ
ン、ポリプロピレン、エチレン−酢酸ビニル共重合体け
ん化物、ポリビニルアルコール、芳香族ポリアミド、ふ
っ素樹脂などを素材とするフィルム、あるいはこれらの
１種又は２種以上を含む積層フィルムがあり、一軸延伸
や二軸延伸フィルムであってもよい。In the present invention, the plastic film or sheet is not particularly limited, and polyesters such as polyethylene terephthalate (PET), polybutylene terephthalate, polyethylene-2,6-naphthalate, polyamide, polyimide, polyacrylonitrile. There are films made of, for example, polycarbonate, polystyrene, polypropylene, saponified products of ethylene-vinyl acetate copolymer, polyvinyl alcohol, aromatic polyamide, and fluororesin, or laminated films containing one or more of these, and uniaxial It may be a stretched or biaxially stretched film.
【００１１】上記プラスチックフィルム１の厚さは、特
に限定されるものではなく、最終的に得られる本発明の
酸化珪素蒸着フィルムの使用目的に合わせて選定すれば
よいが、例えば、１２〜３００μｍの範囲が適当であ
り、好ましくは１５〜１００μｍ、さらに好ましくは２
０〜１００μｍである。The thickness of the plastic film 1 is not particularly limited and may be selected according to the intended use of the finally obtained silicon oxide vapor-deposited film of the present invention. For example, the thickness is 12 to 300 μm. The range is suitable, preferably 15 to 100 μm, more preferably 2
It is 0 to 100 μm.
【００１２】本発明において、上記プラスチックフィル
ム１（又はシート）上に成膜されている前記酸化珪素蒸
着膜２は、真空蒸着、イオンプレーティング、スパッタ
リング、プラズマＣＶＤ等の蒸着方式により成膜されて
いる。In the present invention, the silicon oxide vapor deposition film 2 formed on the plastic film 1 (or sheet) is formed by a vapor deposition method such as vacuum vapor deposition, ion plating, sputtering and plasma CVD. There is.
【００１３】上記酸化珪素蒸着膜２の膜厚は、前記プラ
スチックフィルム１の厚さと、最終的に得られる本発明
の酸化珪素蒸着フィルムの使用目的に合わせて選定され
るものであるが、例えば、３０〜５００Å、あるいは５
００〜２０００Å、あるいは２０００〜５０００Åの範
囲であって、好ましくは２００〜１０００Åである。The thickness of the silicon oxide vapor deposition film 2 is selected according to the thickness of the plastic film 1 and the purpose of use of the finally obtained silicon oxide vapor deposition film of the present invention. 30-500Å, or 5
It is in the range of 00 to 2000Å, or 2000 to 5000Å, preferably 200 to 1000Å.
【００１４】このようにしてプラスチックフィルム１面
に酸化珪素蒸着膜２が成膜された本発明の酸化珪素蒸着
フィルムは、前記酸化珪素蒸着膜２の蒸着面に、波長１
００〜１０００ｎｍ範囲にある光線３を照射することに
より高透明度としたフィルム（又はシート）である。In the silicon oxide vapor deposition film of the present invention in which the silicon oxide vapor deposition film 2 is formed on the surface of the plastic film 1 in this way, the vapor deposition surface of the silicon oxide vapor deposition film 2 has a wavelength of 1 nm.
It is a film (or sheet) having high transparency by irradiating a light ray 3 in the range of 0 to 1000 nm.
【００１５】光照射に使用する光源としては、例えば、
白熱ランプ（出力照度；１３０〜３０００ルクス）、ハ
ロゲンランプ（出力照度；１６００〜２００００ルク
ス）、高圧水銀ランプ（低圧水銀ランプ、超高圧水銀ラ
ンプ、出力照度；１２００〜５００００ルクス）、メタ
ルハライドランプ（出力照度；３９００〜１０００００
ルクス）、高圧ナトリウムランプ（出力照度；５２５０
〜１０００００ルクス）あるいは蛍光ランプなどを使用
する。As a light source used for light irradiation, for example,
Incandescent lamp (output illuminance; 130 to 3000 lux), halogen lamp (output illuminance; 1600 to 20,000 lux), high pressure mercury lamp (low pressure mercury lamp, super high pressure mercury lamp, output illuminance; 1200 to 50,000 lux), metal halide lamp (output Illuminance: 3900 to 100000
Lux), high pressure sodium lamp (output illuminance; 5250
~ 100,000 lux) or a fluorescent lamp is used.
【００１６】下記に各種光源ランプの出力の一例を示
す。 白熱ランプ 定格出力；１０〜２００Ｗ ランプ効率；１３〜１５ルーメン／Ｗ 出力照度；１３０〜３０００ルクス ハロゲンランプ 定格出力；１００〜１５００Ｗ ランプ効率；１６〜２２ルーメン／Ｗ 出力照度；１６００〜３３０００ルクス 高圧水銀ランプ（低圧水銀ランプ、超高圧水銀ランプ） 定格出力；４０〜１０００Ｗ ランプ効率；３０〜６２ルーメン／Ｗ 出力照度；１２００〜６２０００ルクス メタルハライドランプ 定格出力；１００〜２０００Ｗ ランプ効率；３９〜９９ルーメン／Ｗ 出力照度；３９００〜１９８０００ルクス 高圧ナトリウムランプ 定格出力；７０〜１０００Ｗ ランプ効率；７５〜１５４ルーメン／Ｗ 出力照度；５２５０〜１５４０００ルクスThe following are examples of outputs from various light source lamps. Incandescent lamp Rated output: 10-200W Lamp efficiency: 13-15 lumen / W output illuminance; 130-3000 lux Halogen lamp Rated output: 100-1500W Lamp efficiency: 16-22 lumen / W output illuminance: 1600-33000 lux High pressure mercury Lamp (low pressure mercury lamp, ultra high pressure mercury lamp) Rated output: 40 to 1000W Lamp efficiency: 30 to 62 lumens / W Output illuminance; 1200 to 62000 lux Metal halide lamp Rated output: 100 to 2000W Lamp efficiency; 39 to 99 lumens / W Output illuminance; 3900 to 198000 lux High pressure sodium lamp Rated output; 70 to 1000 W Lamp efficiency; 75 to 154 lumen / W Output illuminance; 5250 to 154000 lux
【００１７】下記に本発明の酸化珪素蒸着フィルムを作
成する場合の具体的実施例を示す。Specific examples for producing the silicon oxide vapor deposition film of the present invention will be shown below.
【００１８】＜実施例１＞まず、ポリエチレンテレフタ
レートフィルム１の片面に、蒸着用材料として珪素酸化
物（例えば、一酸化珪素）を用いて、真空蒸着方式によ
り蒸着膜厚１０００Åの酸化珪素蒸着膜２（ＳｉＯx 蒸
着膜、ｘ＝１．５〜１．６）を成膜して酸化珪素蒸着フ
ィルムを得た。Example 1 First, on one surface of a polyethylene terephthalate film 1, a silicon oxide vapor deposition film 2 having a vapor deposition film thickness of 1000 Å was formed by a vacuum vapor deposition method using silicon oxide (eg, silicon monoxide) as a vapor deposition material. (SiO x vapor deposition film, x = 1.5 to 1.6) was deposited to obtain a silicon oxide vapor deposition film.
【００１９】次に、上記酸化珪素蒸着フィルムの蒸着膜
２面に、光源としてハロゲンランプを用いて、光入射フ
ィルム面の照度が７０ルクス程度の光線３（光波長；少
なくとも３００〜１０００ｎｍに分光エネルギーを備え
る）を下記時間照射して、本発明の酸化珪素蒸着フィル
ムを得た。Next, a halogen lamp is used as a light source on the surface of the vapor-deposited film of the above-mentioned silicon oxide vapor-deposited film, and a light beam 3 (light wavelength; spectral energy of at least 300 to 1000 nm) having an illuminance of about 70 lux on the light-incident film surface. Are provided for the following time to obtain a silicon oxide vapor-deposited film of the present invention.
【００２０】一方、ポリエチレンテレフタレートフィル
ム１の片面に、蒸着用材料として珪素酸化物（例えば、
一酸化珪素）を用いて、真空蒸着方式により蒸着膜厚１
０００Åの酸化珪素蒸着膜２（ＳｉＯx 蒸着膜、ｘ＝
１．５〜１．６）を成膜して得られた酸化珪素蒸着フィ
ルムを、光線３を照射せずに暗所（暗室）に下記時間保
管して従来品とした。On the other hand, on one surface of the polyethylene terephthalate film 1, a silicon oxide (for example,
Vapor deposition film thickness of 1 using silicon monoxide)
000Å silicon oxide vapor deposition film 2 (SiO x vapor deposition film, x =
The silicon oxide vapor-deposited film obtained by depositing 1.5 to 1.6) was stored in a dark place (dark room) for the following time without irradiating light ray 3 to obtain a conventional product.
【００２１】所定時間だけ光照射した本発明の上記酸化
珪素蒸着フィルムと、光照射せずに暗所（暗室）に所定
時間だけ保管した上記従来品としての酸化珪素蒸着フィ
ルムについて、その経過時間に対する光透過率の関係を
下記に示す。The silicon oxide vapor-deposited film of the present invention which was irradiated with light for a predetermined time and the conventional silicon oxide vapor-deposited film which was stored in a dark place (dark room) for a predetermined time without being irradiated with light were compared with the elapsed time. The relationship of light transmittance is shown below.
【００２２】 本発明品の光照射経過時間（日） 0 10 14 18 47 本発明品の光透過率（％） 61.0 63.4 63.8 64.0 65.1 暗所保存品の保管経過時間（日） 0 10 14 18 47 暗所保存品の光透過率（％） 60.9 62.3 62.7 62.9 64.3 Light irradiation elapsed time (days) of the present invention product 0 10 14 18 47 Light transmittance (%) of the present invention product 61.0 63.4 63.8 64.0 65.1 Elapsed storage time (days) of dark preserved product 0 10 14 18 47 Light transmittance of products stored in the dark (%) 60.9 62.3 62.7 62.9 64.3
【００２３】以上のことから、本発明の酸化珪素蒸着フ
ィルムは光照射により光透過率が従来品（暗所保存品）
に対して１．５％程度改善されることが確認された。 ＜実施例２＞From the above, the silicon oxide vapor-deposited film of the present invention has a light transmittance of a conventional product when irradiated with light (a product stored in a dark place).
It was confirmed to be improved by about 1.5%. <Example 2>
【００２４】所定時間だけ光照射した上記実施例１にお
ける本発明の酸化珪素蒸着フィルムと、光照射せずに暗
所（暗室）に所定時間だけ保管した上記従来品としての
酸化珪素蒸着フィルムについて、その経過時間に対する
３０℃、７０％ＲＨにおける酸素バリア性（酸素透過
度；cc/m2/day)についても測定したので、その結果を下
記に示す。The silicon oxide vapor-deposited film of the present invention in Example 1 which was irradiated with light for a predetermined time and the silicon oxide vapor-deposited film as a conventional product which was stored in a dark place (dark room) for a predetermined time without being irradiated with light, The oxygen barrier property (oxygen permeability; cc / m 2 / day) at 30 ° C. and 70% RH with respect to the elapsed time was also measured. The results are shown below.
【００２５】 本発明品の光照射経過時間（日） 0 10 14 18 47 本発明品の酸素透過度 3.7 1.5 1.6 1.4 1.5 暗所保存品の保管経過時間（日） 0 10 14 18 47 暗所保存品の酸素透過度 3.5 2.2 2.3 2.1 2.1 Light irradiation elapsed time of the product of the present invention (day) 0 10 14 18 47 Oxygen permeability of the product of the present invention 3.7 1.5 1.6 1.4 1.5 Elapsed time of storage of the product stored in the dark (day) 0 10 14 18 47 Storage in the dark Oxygen permeability of products 3.5 2.2 2.3 2.1 2.1
【００２６】以上のことから、本発明の酸化珪素蒸着フ
ィルムは光照射により３０％程度の酸素バリア性向上の
現象が確認された。From the above, it was confirmed that the silicon oxide vapor-deposited film of the present invention was improved by about 30% in oxygen barrier property by light irradiation.
【００２７】＜実施例３＞また、所定時間だけ光照射し
た上記実施例１又は２における本発明の酸化珪素蒸着フ
ィルムと、光照射せずに暗所（暗室）に所定時間だけ保
管した上記従来品としての酸化珪素蒸着フィルムについ
て、その経過時間に対する４０℃、９０％ＲＨにおける
水蒸気バリア性（水蒸気透過度；g/m2/day) についても
測定したので、その結果を下記に示す。<Embodiment 3> Further, the silicon oxide vapor-deposited film of the present invention in the above-mentioned Embodiment 1 or 2 which is irradiated with light for a predetermined time, and the above-mentioned conventional one which is stored in a dark place (dark room) for a predetermined time without being irradiated with light. The vapor barrier properties (vapor permeability; g / m 2 / day) at 40 ° C. and 90% RH of the silicon oxide vapor-deposited film as a product were also measured, and the results are shown below.
【００２８】 本発明品の光照射経過時間（日） 0 10 14 18 47 本発明品の水蒸気透過度 14.8 2.2 1.7 1.5 1.5 暗所保存品の保管経過時間（日） 0 10 14 18 47 暗所保存品の水蒸気透過度 15.0 2.8 2.6 2.5 2.6 Light irradiation elapsed time of the product of the present invention (day) 0 10 14 18 47 Water vapor permeability of the product of the present invention 14.8 2.2 1.7 1.5 1.5 Elapsed time of storage of the product stored in the dark (day) 0 10 14 18 47 Storage in the dark Water vapor permeability of product 15.0 2.8 2.6 2.5 2.6
【００２９】以上のことから、本発明の酸化珪素蒸着フ
ィルムは光照射により３５％程度の水蒸気バリア性向上
の現象が確認された。From the above, it was confirmed that the vapor-deposited silicon oxide film of the present invention was improved by about 35% in water vapor barrier property by light irradiation.
【００３０】＜実施例４＞まず、ポリエチレンテレフタ
レートフィルム１の片面に、蒸着用材料として珪素酸化
物（例えば、一酸化珪素）を用いて、真空蒸着方式によ
り蒸着膜厚１０００Åの酸化珪素蒸着膜２（ＳｉＯx 蒸
着膜、ｘ＝１．５〜１．６）を成膜して、酸化珪素蒸着
フィルムを得た。Example 4 First, on one surface of the polyethylene terephthalate film 1, a silicon oxide vapor deposition film 2 having a vapor deposition film thickness of 1000 Å was formed by a vacuum vapor deposition method using silicon oxide (for example, silicon monoxide) as a vapor deposition material. (SiO x vapor deposition film, x = 1.5 to 1.6) was deposited to obtain a silicon oxide vapor deposition film.
【００３１】次に、上記酸化珪素蒸着フィルムに対し
て、グラビア印刷機を用いて印刷工程中のインライン
で、上記酸化珪素蒸着フィルムの蒸着膜２面に、光源と
してハロゲンランプを用いて、光入射フィルム面の照度
が７００ルクス程度の光線３（光波長；少なくとも３０
０〜１０００ｎｍに分光エネルギーを備える）を照射
し、印刷工程にて本発明の酸化珪素蒸着フィルムを得
た。なお、印刷中における酸化珪素蒸着フィルム各部へ
の実質照射時間は、印刷速度に対応するものであるが、
本実施例においては２分程度であった。Next, light is incident on the above-mentioned silicon oxide vapor-deposited film by using a halogen lamp as a light source on the vapor-deposited film 2 surface of the above-mentioned silicon oxide vapor-deposited film in-line during a printing process using a gravure printing machine. Light 3 with an illuminance of about 700 lux (light wavelength; at least 30)
(With spectral energy of 0 to 1000 nm), and a silicon oxide vapor deposition film of the present invention was obtained in a printing step. The actual irradiation time of each part of the silicon oxide vapor-deposited film during printing corresponds to the printing speed.
In this example, it took about 2 minutes.
【００３２】得られた本発明の酸化珪素蒸着フィルムの
光透過率を測定したところ、光透過率＝６５．２（光照
射した酸化珪素蒸着フィルム１０枚の平均値）であっ
た。When the light transmittance of the obtained silicon oxide vapor deposition film of the present invention was measured, the light transmittance was 65.2 (an average value of 10 light-irradiated silicon oxide vapor deposition films).
【００３３】一方、ポリエチレンテレフタレートフィル
ム１の片面に、蒸着用ターゲットとして珪素酸化物（例
えば、一酸化珪素）を用いて、真空蒸着方式により蒸着
膜厚１０００Åの酸化珪素蒸着膜２（ＳｉＯx 蒸着膜、
ｘ＝１．５〜１．６）を成膜して得られた酸化珪素蒸着
フィルムを、該フィルムに対して光線３を照射せずに暗
所（暗室）に１時間保管したものを従来品として、上記
同様に光透過率を測定したところ、光透過率＝６３．２
（光照射しない酸化珪素蒸着フィルム１０枚の平均値）
であり、光照射した本発明の酸化珪素蒸着フィルムの透
過率に比較して上記従来品は低い透過率を示した。On the other hand, on one surface of the polyethylene terephthalate film 1, a silicon oxide vapor deposition film 2 (SiO x vapor deposition film) having a vapor deposition film thickness of 1000 Å is formed by a vacuum vapor deposition method using a silicon oxide (for example, silicon monoxide) as a vapor deposition target. ,
x = 1.5 to 1.6), a silicon oxide vapor-deposited film obtained by storing the film in a dark place (dark room) for 1 hour without irradiating the film with light rays 3 is a conventional product. As a result, when the light transmittance was measured in the same manner as above, the light transmittance = 63.2.
(Average value of 10 silicon oxide vapor deposition films without light irradiation)
The above-mentioned conventional product showed a low transmittance as compared with the transmittance of the light-irradiated silicon oxide vapor deposition film of the present invention.
【００３４】以上から、光照射により３．２％程度の透
過率の向上した本発明の酸化珪素蒸着フィルムが得られ
た。 ＜実施例５＞From the above, the silicon oxide vapor deposition film of the present invention having an improved transmittance of about 3.2% was obtained by light irradiation. <Example 5>
【００３５】上記実施例４において得られた光照射した
本発明の酸化珪素蒸着フィルムと、光照射せずに暗所
（暗室）に保管した上記従来品としての酸化珪素蒸着フ
ィルムについて、３０℃、７０％ＲＨにおける酸素バリ
ア性（酸素透過度；cc/m2/day)について、直ちに測定を
開始したところ下記の結果が得られた。The light-irradiated silicon oxide vapor-deposited film of the present invention obtained in Example 4 and the conventional silicon oxide vapor-deposited film stored in a dark place (dark room) without light-irradiation at 30 ° C. When the oxygen barrier property (oxygen permeability; cc / m 2 / day) at 70% RH was immediately measured, the following results were obtained.
【００３６】 本発明品の酸素透過度 2.4 暗所保存品の酸素透過度 2.8Oxygen permeability of the product of the present invention 2.4 Oxygen permeability of the product stored in the dark 2.8
【００３７】以上のことから、本発明の酸化珪素蒸着フ
ィルムは光照射により１４％程度の酸素バリア性向上の
現象が確認された。From the above, it was confirmed that the silicon oxide vapor-deposited film of the present invention was improved by about 14% in oxygen barrier property by light irradiation.
【００３８】＜実施例６＞また、上記実施例４において
得られた光照射した本発明の酸化珪素蒸着フィルムと、
光照射せずに暗所（暗室）に所定時間だけ保管した上記
従来品としての酸化珪素蒸着フィルムについて、４０
℃、９０％ＲＨにおける水蒸気バリア性（水蒸気透過
度；g/m2/day) について、直ちに測定を開始したとこ
ろ、下記の結果が得られた。<Example 6> Further, the light-irradiated silicon oxide vapor-deposited film of the present invention obtained in Example 4 above,
Regarding the silicon oxide vapor-deposited film as the conventional product, which was stored in a dark place (dark room) for a predetermined time without being irradiated with light,
When the water vapor barrier property (water vapor permeability; g / m 2 / day) at 90 ° C. and 90% RH was immediately measured, the following results were obtained.
【００３９】 本発明品の水蒸気透過度 2.0 暗所保存品の水蒸気透過度 2.5Water vapor permeability of the product of the present invention 2.0 Water vapor permeability of the product stored in the dark 2.5
【００４０】以上のことから、本発明の酸化珪素蒸着フ
ィルムは光照射により２０％程度の水蒸気バリア性向上
の現象が確認された。From the above, it was confirmed that the vapor-deposited silicon oxide film of the present invention was exposed to light to improve the water vapor barrier property by about 20%.
【００４１】[0041]
【作用】本発明の酸化珪素蒸着フィルムは、透明なプラ
スチックフィルム１（又はシート）の酸化珪素蒸着膜２
面に、波長１００〜１０００ｎｍ範囲の光線３を強制的
に照射することによって、僅かに着色された透明な酸化
珪素蒸着膜２の着色度を低下させることができ、これに
よって高透明度の酸化珪素蒸着膜２を得ることができ
る。The silicon oxide vapor-deposited film of the present invention is a transparent plastic film 1 (or sheet) having a silicon oxide vapor-deposited film 2 formed thereon.
By forcibly irradiating the surface with the light beam 3 having a wavelength in the range of 100 to 1000 nm, the coloring degree of the slightly colored transparent silicon oxide vapor deposition film 2 can be reduced, whereby the highly transparent silicon oxide vapor deposition is performed. The membrane 2 can be obtained.
【００４２】透明なプラスチックフィルム１面に、珪素
（Ｓｉ）原子と酸素（Ｏ）原子が不完全な結合状態で蒸
着されているために僅かに黄色味等の着色を呈している
酸化珪素蒸着膜２は、上記光照射によって、より完全な
構成の結合状態に整えられ、透明なプラスチックフィル
ム１（又はシート）と高透明度の酸化珪素蒸着膜２とに
よる無色で高透明度の酸化珪素蒸着フィルムが得られ
る。A silicon oxide vapor deposition film which is slightly colored such as yellowish color because silicon (Si) atoms and oxygen (O) atoms are vapor-deposited in an imperfectly bonded state on the surface of a transparent plastic film. 2 is adjusted to a more complete bonded state by the above light irradiation, and a colorless and highly transparent silicon oxide vapor deposition film is obtained by the transparent plastic film 1 (or sheet) and the highly transparent silicon oxide vapor deposition film 2. To be
【００４３】また、上記酸化珪素蒸着膜２は、上記光照
射によって、より完全な構成の結合状態に整えられ、酸
素バリア性及び水蒸気バリア性をも向上した酸化珪素蒸
着フィルムが得られる。Further, the above-mentioned silicon oxide vapor-deposited film 2 is adjusted to a more complete bonded state by the above-mentioned light irradiation, and a silicon oxide vapor-deposited film having improved oxygen barrier properties and water vapor barrier properties can be obtained.
【００４４】[0044]
【発明の効果】本発明の酸化珪素蒸着フィルムは、内容
物が本来の色調よりも黄色味等の着色掛かって見えたり
して、透明なバリアフィルムとしての利点を生かし切れ
なかった従来の酸化珪素蒸着フィルムと異なり、透明バ
リアフィルムの黄色味等の着色を解消して、より透明度
を向上させる効果があり、高い透明性や、高いガスバリ
ア性、水蒸気バリア性が要求される包装材料として、ま
た、真の透明バリアフィルムとして効果的である。EFFECT OF THE INVENTION The silicon oxide vapor-deposited film of the present invention has a conventional silicon oxide film in which the contents of the film cannot be fully utilized as a transparent barrier film, because the contents appear to be colored yellowish or the like rather than the original color tone. Unlike vapor-deposited film, it eliminates coloring such as yellowish color of the transparent barrier film and has the effect of further improving transparency, and as a packaging material that requires high transparency, high gas barrier property, and water vapor barrier property, Effective as a true transparent barrier film.
【図１】本発明の酸化珪素蒸着フィルムの側断面図であ
る。FIG. 1 is a side sectional view of a silicon oxide vapor deposition film of the present invention.
１…プラスチックフィルム（又はシート） ２…酸化珪
素蒸着膜 ３…光線1 ... Plastic film (or sheet) 2 ... Silicon oxide vapor deposition film 3 ... Ray
Claims (1)
透明な酸化珪素蒸着膜を備えた酸化珪素蒸着フィルムに
おいて、僅かに着色された透明な酸化珪素蒸着膜面に波
長１００〜１０００ｎｍの範囲の光線を強制的に照射し
て得られる着色度の低下した高透明度の酸化珪素蒸着膜
を備えることを特徴とする酸化珪素蒸着フィルム。1. A silicon oxide vapor deposition film comprising a transparent plastic film or sheet provided with a transparent silicon oxide vapor deposition film, and a light ray in the wavelength range of 100 to 1000 nm is forced on the slightly colored transparent silicon oxide vapor deposition film surface. A silicon oxide vapor deposition film having a highly transparent silicon oxide vapor deposition film having a reduced degree of coloring obtained by irradiating the silicon oxide film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1153495A JPH08197674A (en) | 1995-01-27 | 1995-01-27 | Silicon oxide vapor deposition film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1153495A JPH08197674A (en) | 1995-01-27 | 1995-01-27 | Silicon oxide vapor deposition film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08197674A true JPH08197674A (en) | 1996-08-06 |
Family
ID=11780641
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1153495A Pending JPH08197674A (en) | 1995-01-27 | 1995-01-27 | Silicon oxide vapor deposition film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08197674A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8124236B2 (en) | 2005-07-27 | 2012-02-28 | Mitsubishi Plastics, Inc. | Gas-barrier laminate for hydrothermal treatment |
-
1995
- 1995-01-27 JP JP1153495A patent/JPH08197674A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8124236B2 (en) | 2005-07-27 | 2012-02-28 | Mitsubishi Plastics, Inc. | Gas-barrier laminate for hydrothermal treatment |
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