JPH0812886B2 - Semiconductor container and manufacturing method thereof - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor container and a method of manufacturing the same, and more particularly to a ceramic package of a semiconductor device in which an index mark (recognition mark) of a ceramic package is surface-treated by electrolytic plating and a method of manufacturing the same.

A semiconductor container having a semiconductor chip on which an integrated circuit is formed is known, and an example thereof is shown in FIG.
It is shown in (b). Such a semiconductor container is shown in FIG. 3 (a) with a part cut away. In the figure, 1 is a ceramic package, 2 (1), 2 (2) ... 2 (n) are integrated circuits of semiconductor chips. For connecting to the substrate on which the semiconductor container is mounted, 3 is a seal ring, 4 is a wire bonding pattern, and the wire bonding pattern and the electrode pad of the semiconductor chip are connected by a wire. Reference numeral 5 is a die attach, on which a semiconductor chip (not shown) is die-attached. FIG. 3B shows a semiconductor container in which a lid (also called a cap) 6 is sealed. In FIGS. 3 (a) and 3 (b), only the pins arranged on the front side are shown in a simplified manner, but in practice, a few pins to a few hundred tens of pins are provided.

[0003]

2. Description of the Related Art Conventionally, an index mark is provided on the surface of a ceramic package 1. The index mark 7 is placed directly above the pin indicated by reference numeral 2 (1) in FIG. 3 (a). The pin 2 (1) is a pin called the 1st pin (the 1st pin), and the other pins 2 (2) ... 2 (n) are arranged in a predetermined pattern with reference to the 1st pin. Since the mounting is performed on the basis of 1 pin 2 (1), the index mark plays an important function for positioning in mounting the semiconductor container. The index mark 7 is shown in detail in the partially enlarged cross-sectional view of FIG. 4 (in FIG. 4, the same parts as those shown in FIG. 3 are designated by the same reference numerals), which are tungsten (W) and molybdenum. It comprises a metallized portion 7a made of a metal such as (Mo) or manganese (Mn), and an electroless nickel / gold plated layer 7b formed on the metallized portion 7a. In manufacturing a semiconductor container, as shown in FIG.
After making the structure shown in (a), pin 2 (1), 2
(2) 2 (n), the seal ring 3 and the wire bonding pattern 4 are plated with gold. For that purpose, these parts are electrically connected and gold plating is formed to a thickness of about 3 μm. However, since the metallized portion 7a described above is an electrically isolated portion like an island, the metallized portion 7a is not covered by the metallized portion 7a. Rickel / gold plating layer 7b is formed by electroless plating, and its thickness is as thin as angstrom (Å).

[0004]

When a semiconductor chip is die-attached to a semiconductor container, the container is heated to about 400 ° C. By the way, since the gold plating layer 7b of the index mark 7 is formed by electroless plating and is thin as described above, it is easy to discolor to black.
There is a problem that 7 becomes unnoticeable and cannot perform its original recognition function. It also has a problem of easy peeling due to lack of adhesion, and if the gold plating layer 7b is peeled off, there is a problem that it enters the substrate on which the semiconductor container is mounted and causes a short circuit.

[0005]

The problem to be solved is that the semiconductor container is provided with an index mark which does not discolor or peel off, and the pin / seal ring of the semiconductor container or the wire bonding pattern is plated with gold. It is to form by plating at the same time as applying.

[0006]

The semiconductor container of the present invention comprises:
Electrolytically plated pins, a first green sheet surface conductive film that is electrically connected to the pins and guides its potential to the end of the green sheet, a metallized portion of an index mark on the package surface, and the index mark A second green sheet surface conductive film that is electrically connected to the metallized portion of the second green sheet and guides the potential to the end of the green sheet.
The first green sheet surface conductive film and the second green sheet surface conductive film are electrically disposed on the side surface of the green sheet constituting the package, which is disposed inside the cage and is electrically connected to the surface of the metalized portion of the index mark. Connection
Method for producing characterized, also the present invention to have a plating layer is electrolytically plated simultaneously electroplating and the pin forming with the first electrolytic plating is connected to a pin applied
The second electrically connected conductive film on the green sheet and the metallized part of the index mark on the package surface
The green sheet surface conductive film of (1) to the side surface of the green sheet forming the package, and after electrically connecting the first and second green sheet surface conductive films on the side surface of the package, forming a plating layer which is electrolytically plated simultaneously in metallized partial surface of the index mark by performing electrolytic plating, meta
The side of the package with the rise pattern is metalized.
It is characterized by including a step of removing it together with the pattern .

[0007]

In other words, according to the present invention, the index mark is formed by electroplating to the same thickness as the electrolytically plated portion of the semiconductor container such as a pin, so that it does not easily discolor and is not easily peeled off. The index mark sufficiently fulfills the function of recognition, and the index mark is simultaneously gold-plated at the time of gold plating such as pins, seal rings, and wire bonding of the semiconductor container, thereby simplifying the manufacturing process.

[0008]

Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 is a sectional view showing an embodiment of the present invention. In the figure, 11 ceramic package, 12 (1), 12
(2) ... 12 (n) is a pin, 13 is a seal ring, 14 is a wire bonding pattern, and 15 is a die attach, which are the same as those in the conventional example. The index mark 16 according to the present invention comprises a metallized portion 16a, a nickel plating layer 16b, and a gold plating layer 16c, and the nickel plating layer 16b and the gold plating layer 16c are formed by electrolytic plating. In FIG. 1 and the following FIG. 2, index marks, nickel and gold plating layers, etc. are exaggeratedly shown.

A method of forming the index mark 16 shown in FIG. 1 will be described below with reference to FIG. 2, the same parts as those shown in FIG. 1 are indicated by the same reference numerals. The ceramic package 11 shown in FIG. 1 is a ceramic green sheet 11a, 11 shown in FIG. 2 (a).
The green sheet is made by stacking and sintering b, 11c and 11d, and the green sheet is schematically shown in an exploded sectional view in FIG. On the uppermost green sheet 11a, the metallized portion 16a of the index mark is made of a conductive paste, for example, a tungsten paste, and a Kovar seal ring 13 and a seal pattern 17 are provided. Further, a through hole (also referred to as VIA) connected to the metallized portion is formed, and the through hole 18 is filled with a tungsten paste. A wire bonding pattern 14 is made of a tungsten paste on the second-layer green sheet 11b, and one side of this pattern 14 protrudes from the edge of the green sheet to form an exposed portion, as shown in the drawing. The die attach 15 is similarly formed on the green sheet 11c of the third layer, and one side thereof also protrudes from the edge of the green sheet to provide an exposed portion. Through holes 19 are formed in the fourth-layer green sheet 11d, as shown in FIG. 2 (a).
A conductive paste (e.g. tungsten paste) is embedded in the pin 12 (1) as in the case of the through hole 18.
It is designed to be electrically connected to. The green sheets shown in FIG. 2 (a) are laminated as shown in FIG. 2 (b). In addition, in FIG. 2B, the green sheet is partially cut away. Thereafter, a metallized pattern 21 is formed on the side portion of the green sheet for electrically connecting the metallized pattern, and all the patterns protruding from the edge of the green sheet are electrically connected. After the green sheet is sintered, the metallized pattern 21 is electrically connected to a plating device, and nickel and gold are electroplated in this order. As shown in FIG. 1, not only on the metallized pattern 21 but also on the metallized portion 16a. A nickel plating layer 16b and a gold plating layer 16c are also formed on the upper surface. After that,
The ceramic package is ground along the alternate long and short dash line in FIGS. 1 and 2B to complete the semiconductor container. In the above example, the tungsten paste is used as the conductive paste, and the nickel plating and the gold plating are performed as the plating, but the scope of application of the present invention is not limited to the example, and also extends to the case of using other pastes and plating. It is a thing.

[0010]

As described above, according to the present invention, since the surface treatment of the index mark of the package of the semiconductor container is performed by electrolytic plating, the index mark is firmly formed with a sufficient thickness like the plating of the pins and the like. Is
Since discoloration or peeling-off is prevented and it is formed so as to be sufficiently conspicuous, it is effective in ensuring the mounting of the semiconductor container.

[Brief description of drawings]

FIG. 1 is a sectional view of an embodiment of the present invention.

2 (a) is an exploded sectional view of a green sheet forming the embodiment of FIG. 1, and FIG. 2 (b) is a sectional view showing a state in which the green sheets of FIG. 2 (a) are laminated.

3A and 3B are views of a conventional semiconductor container, FIG. 3A is a partially cutaway perspective view, and FIG. 3B is a perspective view of a semiconductor container with a seal.

FIG. 4 is a cross-sectional view of a conventional index mark.

[Explanation of symbols]

 11 Ceramic package 11a ・ ・ ・ 11b Green sheet 12 (1) ・ ・ ・ 12 (n) Pin 13 Seal ring 14 Wire bonding pattern 15 Die attach 16 Index mark 16a Gold plating layer 17 Seal pattern 18, 19 Sulu hole 20, 21 Metallized pattern

Claims (2)

[Claims] 1. A pin to be electroplated, a first conductive film on the surface of the green sheet which is electrically connected to the pin and guides its potential to the end of the green sheet, and a metallized portion of an index mark on the surface of the package. And a second green sheet surface conductive film that is electrically connected to the metallized portion of the index mark and guides its potential to the end portion of the green sheet, and the second green sheet surface conductive film is inside the package. Distribution
Placed on the surface of the metallized portion of the index mark,
The side of the green sheet that constitutes the package is the first
Green sheet surface conductive film and the second green sheet surface conductive film and the semiconductor container characterized by having a plating layer is electrolytically plated simultaneously electroplating and the pin forming electrically connected. 2. A second green sheet surface conductive film electroplating is connected to the metallized portions of the index mark of the first green sheet surface conductive film and the package surface that is connected to the pin electrically to be applied Lead to the side surface of the green sheet forming the package, and guide the surface of the first and second green sheets on the side surface of the package.
After the electrical film is electrically connected, the pins are electroplated to form a plating layer that is also electroplated on the surface of the metalized portion of the index mark.
The side of the package with the metallized pattern
A method of manufacturing a semiconductor container, comprising a step of removing the metallized pattern together with the metallized pattern .