JPH0778939A - Electric circuit device and its adjustment - Google Patents
Electric circuit device and its adjustmentInfo
- Publication number
- JPH0778939A JPH0778939A JP22188693A JP22188693A JPH0778939A JP H0778939 A JPH0778939 A JP H0778939A JP 22188693 A JP22188693 A JP 22188693A JP 22188693 A JP22188693 A JP 22188693A JP H0778939 A JPH0778939 A JP H0778939A
- Authority
- JP
- Japan
- Prior art keywords
- electric circuit
- short
- wiring
- circuit
- adjustment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、抵抗素子等の電気回路
素子の特性を製造工程の後に調整することができる電気
回路装置と電気回路調整方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electric circuit device and an electric circuit adjusting method capable of adjusting the characteristics of an electric circuit element such as a resistance element after a manufacturing process.
【０００２】[0002]
【従来の技術】図４は、従来の電気回路調整方法の説明
図であり、（Ａ）は調整前、（Ｂ）は調整後の回路を示
している。この図において、２１は抵抗素子、２２はツ
ェナーダイオード、２３は導電化されたツェナーダイオ
ードである。2. Description of the Related Art FIGS. 4A and 4B are explanatory views of a conventional electric circuit adjusting method. FIG. 4A shows a circuit before adjustment and FIG. 4B shows a circuit after adjustment. In this figure, 21 is a resistance element, 22 is a Zener diode, and 23 is a conductive Zener diode.
【０００３】従来、集積回路装置の回路を構成する抵抗
素子の抵抗値を製造工程終了後に調整する方法として、
図４（Ａ）に示されているように、抵抗素子２１と並列
にツェナーダイオード２２を接続しておき、図４（Ｂ）
に示されているように、このツェナーダイオード２２を
ショートさせるかどうかで抵抗素子２１を含む回路の抵
抗値を調整していた。そして、このツェナーダイオード
２２をショートする方法としては、製造工程が終了した
後、集積回路装置の回路特性を調整する段階で、このツ
ェナーダイオード２２に選択的に逆方向の過電流を流し
て破壊し、集積回路装置を動作させるとき、抵抗素子２
１に流れる電流を、破壊されて導電化されたツェナーダ
イオード２３を流す方法を用いていた。Conventionally, as a method of adjusting the resistance value of a resistance element constituting a circuit of an integrated circuit device after the manufacturing process is completed,
As shown in FIG. 4 (A), a Zener diode 22 is connected in parallel with the resistance element 21, and FIG.
As shown in, the resistance value of the circuit including the resistance element 21 is adjusted depending on whether the Zener diode 22 is short-circuited. Then, as a method of short-circuiting the Zener diode 22, after the manufacturing process is completed, at the stage of adjusting the circuit characteristics of the integrated circuit device, an overcurrent in the reverse direction is selectively applied to the Zener diode 22 to destroy it. When operating the integrated circuit device, the resistance element 2
The method of flowing the current flowing through No. 1 through the Zener diode 23 which has been destroyed and made conductive is used.
【０００４】[0004]
【発明が解決しようとする課題】この方法には、製造工
程後、外部からツェナーダイオード２２に電圧を印加す
ることによって集積回路装置の回路特性を調整すること
ができる利点があるものの、ツェナーダイオード２２の
破壊が不十分になり易く、破壊部分に抵抗が残り、目的
とする回路特性が得られないという問題があった。This method has the advantage that the circuit characteristics of the integrated circuit device can be adjusted by externally applying a voltage to the Zener diode 22 after the manufacturing process, but the Zener diode 22 is not possible. However, there is a problem in that the breakdown is likely to be insufficient, the resistance remains in the breakdown portion, and the intended circuit characteristics cannot be obtained.
【０００５】したがって、本発明は、集積回路装置の製
造工程が終了した後、外部から電気的に回路素子の値を
変えて特性を調整することができる電気回路装置と電気
回路調整方法を提供することを目的とする。Therefore, the present invention provides an electric circuit device and an electric circuit adjusting method capable of adjusting the characteristic by externally changing the value of the circuit element after the manufacturing process of the integrated circuit device is completed. The purpose is to
【０００６】[0006]
【課題を解決するための手段】本発明にかかる電気回路
装置においては、電気回路素子の両端を短絡する配線が
形成され、該配線の近傍に発熱体が配置され、該発熱体
に選択的に電流を流して該配線の一部を加熱溶断するこ
とによって該電気回路素子の特性を選択的に発現させる
構成を採用した。In an electric circuit device according to the present invention, a wiring for short-circuiting both ends of an electric circuit element is formed, a heating element is arranged in the vicinity of the wiring, and the heating element is selectively attached to the heating element. A configuration is adopted in which a characteristic of the electric circuit element is selectively expressed by applying a current to heat and melt a part of the wiring.
【０００７】この場合、発熱体を多結晶シリコンによっ
て形成し、電気回路素子を抵抗素子とすることができ
る。In this case, the heating element can be formed of polycrystalline silicon and the electric circuit element can be used as a resistance element.
【０００８】また、本発明にかかる電気回路調整方法に
おいては、電気回路素子の両端を短絡する配線を形成
し、該配線の近傍に発熱体を配置し、該発熱体に選択的
に電流を流して該配線の一部を加熱溶断することによっ
て、該電気回路素子の特性を選択的に発現させる工程を
採用した。Further, in the electric circuit adjusting method according to the present invention, a wiring for short-circuiting both ends of the electric circuit element is formed, a heating element is arranged in the vicinity of the wiring, and an electric current is selectively applied to the heating element. Then, a step of selectively exposing the characteristics of the electric circuit element by heating and melting a part of the wiring is adopted.
【０００９】この場合、電気回路素子を抵抗素子にする
ことができる。In this case, the electric circuit element can be a resistance element.
【００１０】[0010]
【作用】図１は、本発明の電気回路調整方法の原理説明
図であり、（Ａ）は調整前、（Ｂ）は調整後の回路を示
している。この図において、１1 ，１2 ，１3 は抵抗素
子、２1 ，２2 ，２3 は短絡配線である。この原理説明
図によって本発明の電気回路調整方法の原理を説明す
る。1A and 1B are explanatory views of the principle of the electric circuit adjusting method of the present invention. FIG. 1A shows a circuit before adjustment and FIG. 1B shows a circuit after adjustment. In this figure, 1 1 , 1 2 , 1 3 are resistance elements, 2 1 , 2 2 , 2 3 are short-circuit wirings. The principle of the electric circuit adjusting method of the present invention will be described with reference to this principle explanatory diagram.
【００１１】本発明においては、まず、図１（Ａ）に示
されているように、集積回路装置の回路を構成する抵抗
素子Ｒ1 １1 ，Ｒ2 １2 ，Ｒ3 １3 を直列接続し、これ
らの抵抗素子Ｒ1 １1 ，Ｒ2 １2 ，Ｒ3 １3 の両端を短
絡配線２1 ，２2 ，２3 によって短絡しておく。したが
って、この状態では、これらの抵抗素子の直列抵抗Ｒ
は、Ｒ＝０となっている。In the present invention, first, as shown in FIG. 1A, resistance elements R 1 1 1 , R 2 1 2 and R 3 1 3 forming a circuit of an integrated circuit device are connected in series. Then, both ends of these resistance elements R 1 1 1 , R 2 1 2 and R 3 1 3 are short-circuited by the short-circuit wires 2 1 , 2 2 and 2 3 . Therefore, in this state, the series resistance R of these resistance elements is
Is R = 0.
【００１２】そして、図１（Ｂ）に示されているよう
に、製造工程が終了した後に集積回路装置の回路特性を
調整する段階で、抵抗素子Ｒ1 １1 ，Ｒ2 １2 ，Ｒ3 １
3 の両端を短絡している短絡配線２1 ，２2 ，２3 を選
択的に切断して、これらの抵抗素子の直列抵抗Ｒを調整
する。図１（Ｂ）には、抵抗素子Ｒ1 １1 の両端を短絡
する短絡配線２1 と抵抗素子Ｒ2 １2 の両端を短絡する
短絡配線２2 を切断した例が示されており、これらの抵
抗素子の直列抵抗Ｒは、Ｒ＝Ｒ1 ＋Ｒ2 となっている。Then, as shown in FIG. 1B, at the stage of adjusting the circuit characteristics of the integrated circuit device after the manufacturing process is completed, the resistance elements R 1 1 1 , R 2 1 2 , R 3 are formed. 1
By short-circuiting the third ends are short-circuited wiring 2 1, 2 2, 2 3 selectively cut to adjust the series resistance R of the resistor elements. The FIG. 1 (B), the resistance element R 1 1 1 across has been shown an example in which cutting the shorting bar 2 2 for short-circuiting both ends short wire 2 1 and the resistance element R 2 1 2 for short-circuiting, these The series resistance R of the resistance element is R = R 1 + R 2 .
【００１３】本発明は、上記の抵抗素子の抵抗値の調整
だけでなく、静電容量の容量の調整や、直列接続された
ダイオードの順方向電圧の調整、配線自体の変更、調整
等に適用することができる。The present invention is applied not only to the adjustment of the resistance value of the resistance element described above, but also to the adjustment of the capacitance of the electrostatic capacitance, the adjustment of the forward voltage of the diodes connected in series, the alteration of the wiring itself, the adjustment and the like. can do.
【００１４】[0014]
【実施例】以下、本発明の実施例を説明する。 （第１実施例）図２、図３は、本発明の実施例の電気回
路装置と電気回路調整方法の説明図であり、それぞれの
（Ａ）は平面を示し、（Ｂ）は断面を示している。この
図において、１１は基板、１２は発熱体、１３は層間絶
縁膜、１４は配線である。この実施例の電気回路装置と
電気回路調整方法を図面によって説明する。EXAMPLES Examples of the present invention will be described below. (First Embodiment) FIGS. 2 and 3 are explanatory views of an electric circuit device and an electric circuit adjusting method according to an embodiment of the present invention, in which (A) shows a plane and (B) shows a cross section. ing. In this figure, 11 is a substrate, 12 is a heating element, 13 is an interlayer insulating film, and 14 is wiring. An electric circuit device and an electric circuit adjusting method of this embodiment will be described with reference to the drawings.
【００１５】〔特性調整前〕図２（Ａ）、（Ｂ）は、集
積回路装置の製造したままの構造を示す。この段階で
は、図に示されているように、基板１１の上に多結晶シ
リコンからなる発熱体１２が形成され、その上に層間絶
縁膜１３が形成され、その上にＡｌからなる配線１４が
形成されている。この配線１４は、図１（Ａ）に示され
ているように、抵抗素子の両端を短絡する配線であり、
発熱体１２は層間絶縁膜１３を介して設けられ、外部か
ら電流を流すことによって発熱させて配線１４を溶断す
る機能を有している。この状態では、図１の抵抗素子の
直列抵抗値Ｒは０となっている。[Before Characteristic Adjustment] FIGS. 2A and 2B show the as-manufactured structure of the integrated circuit device. At this stage, as shown in the figure, the heating element 12 made of polycrystalline silicon is formed on the substrate 11, the interlayer insulating film 13 is formed thereon, and the wiring 14 made of Al is formed thereon. Has been formed. As shown in FIG. 1A, the wiring 14 is a wiring that short-circuits both ends of the resistance element,
The heating element 12 is provided via the interlayer insulating film 13, and has a function of causing heat to be generated by flowing an electric current from the outside and melting the wiring 14. In this state, the series resistance value R of the resistance element of FIG. 1 is 0.
【００１６】〔特性調整後〕図３（Ａ）、（Ｂ）は、集
積回路装置の調整後の構造を示す。この段階では、図に
示されているように、基板１１の上に形成された多結晶
シリコンからなる発熱体１２に外部から電流を流して発
熱させ、層間絶縁膜１３を通してＡｌからなる配線１４
を加熱して溶断する。その結果、図１（Ｂ）に示された
ように、抵抗素子の両端を短絡する配線が切断されるた
め、短絡していた抵抗素子の抵抗値が発現して、その抵
抗値が直列抵抗に加算される。[After Characteristic Adjustment] FIGS. 3A and 3B show the structure of the integrated circuit device after adjustment. At this stage, as shown in the figure, an electric current is externally applied to the heating element 12 made of polycrystalline silicon formed on the substrate 11 to generate heat, and the wiring 14 made of Al is passed through the interlayer insulating film 13.
To heat and melt. As a result, as shown in FIG. 1B, the wiring that short-circuits both ends of the resistance element is cut, so that the resistance value of the short-circuited resistance element appears and the resistance value becomes a series resistance. Is added.
【００１７】[0017]
【発明の効果】以上説明したように、本発明によると、
従来の方法のように抵抗素子等の電気回路素子の両端を
短絡するツェナーダイオードを破壊して、破壊されたツ
ェナーダイオードによって回路素子の両端を短絡して電
気回路素子の電気量を無効にするのではなく、当初、電
気回路素子の両端を配線によって短絡して電気回路素子
の電気量を無効にしておき、必要に応じて、電気回路素
子の両端を短絡していた配線を切断して電気回路素子の
電気量を発現するものであるから、短絡するツェナーダ
イオード等の抵抗の経時変化等の信頼性上の問題が生じ
ない。As described above, according to the present invention,
As in the conventional method, a Zener diode that short-circuits both ends of an electric circuit element such as a resistance element is destroyed, and both ends of the circuit element are short-circuited by the destroyed Zener diode to invalidate the electric quantity of the electric circuit element. Initially, both ends of the electric circuit element were initially shorted by wiring to invalidate the electric quantity of the electric circuit element, and if necessary, the both ends of the electric circuit element were short-circuited to cut the electric circuit. Since it expresses the amount of electricity of the element, there is no problem in reliability such as change in resistance of a short-circuited Zener diode or the like with time.
【図１】本発明の電気回路調整方法の原理説明図であ
り、（Ａ）は調整前、（Ｂ）は調整後の回路を示してい
る。FIG. 1 is a diagram illustrating the principle of an electric circuit adjusting method of the present invention, in which (A) shows a circuit before adjustment and (B) shows a circuit after adjustment.
【図２】本発明の実施例の電気回路装置と電気回路調整
方法の説明図（１）であり、（Ａ）は平面を示し、
（Ｂ）は断面を示している。FIG. 2 is an explanatory diagram (1) of the electric circuit device and the electric circuit adjusting method according to the embodiment of the present invention, in which (A) shows a plane,
(B) shows a cross section.
【図３】本発明の実施例の電気回路装置と電気回路調整
方法の説明図（２）であり、（Ａ）は平面を示し、
（Ｂ）は断面を示している。FIG. 3 is an explanatory diagram (2) of the electric circuit device and the electric circuit adjusting method according to the embodiment of the present invention, in which (A) shows a plane,
(B) shows a cross section.
【図４】従来の電気回路調整方法の説明図であり、
（Ａ）は調整前、（Ｂ）は調整後の回路を示している。FIG. 4 is an explanatory diagram of a conventional electric circuit adjusting method,
(A) shows the circuit before adjustment, and (B) shows the circuit after adjustment.
１1 ，１2 ，１3 抵抗素子 ２1 ，２2 ，２3 短絡配線 １１ 基板 １２ 発熱体 １３ 層間絶縁膜 １４ 配線 ２１ 抵抗素子 ２２ ツェナーダイオード ２３ 導電化されたツェナーダイオード1 1 , 1 2 , 1 3 Resistance element 2 1 , 2 2 , 2 3 Short-circuit wiring 11 Substrate 12 Heating element 13 Interlayer insulating film 14 Wiring 21 Resistive element 22 Zener diode 23 Conducted Zener diode
Claims (5)
成され、該配線の近傍に発熱体が配置され、該発熱体に
選択的に電流を流して該配線の一部を加熱溶断すること
によって該電気回路素子の特性を選択的に発現させるよ
うに構成したことを特徴とする電気回路装置。1. A wiring for short-circuiting both ends of an electric circuit element is formed, a heating element is arranged in the vicinity of the wiring, and an electric current is selectively applied to the heating element to heat and melt a part of the wiring. An electric circuit device characterized by being configured so that the characteristics of the electric circuit element are selectively expressed by.
徴とする請求項１に記載された電気回路装置。2. The electric circuit device according to claim 1, wherein the heating element is polycrystalline silicon.
徴とする請求項１に記載された電気回路装置。3. The electric circuit device according to claim 1, wherein the electric circuit element is a resistance element.
成し、該配線の近傍に発熱体を配置し、該発熱体に選択
的に電流を流して該配線の一部を加熱溶断することによ
って、該電気回路素子の特性を選択的に発現させること
を特徴とする電気回路調整方法。4. A wiring for short-circuiting both ends of an electric circuit element is formed, a heating element is arranged in the vicinity of the wiring, and an electric current is selectively applied to the heating element to heat and melt a part of the wiring. A method for adjusting an electric circuit, characterized in that the characteristics of the electric circuit element are selectively expressed by.
徴とする請求項４に記載された電気回路調整方法。5. The electric circuit adjusting method according to claim 4, wherein the electric circuit element is a resistance element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22188693A JPH0778939A (en) | 1993-09-07 | 1993-09-07 | Electric circuit device and its adjustment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22188693A JPH0778939A (en) | 1993-09-07 | 1993-09-07 | Electric circuit device and its adjustment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0778939A true JPH0778939A (en) | 1995-03-20 |
Family
ID=16773723
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22188693A Withdrawn JPH0778939A (en) | 1993-09-07 | 1993-09-07 | Electric circuit device and its adjustment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0778939A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010118650A (en) * | 2008-10-16 | 2010-05-27 | Semiconductor Energy Lab Co Ltd | Semiconductor device and method of manufacturing the same |
-
1993
- 1993-09-07 JP JP22188693A patent/JPH0778939A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010118650A (en) * | 2008-10-16 | 2010-05-27 | Semiconductor Energy Lab Co Ltd | Semiconductor device and method of manufacturing the same |
| TWI490981B (en) * | 2008-10-16 | 2015-07-01 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20001107 |