JPH0745883A - Piezoelectric ceramic composition - Google Patents
Piezoelectric ceramic compositionInfo
- Publication number
- JPH0745883A JPH0745883A JP5209017A JP20901793A JPH0745883A JP H0745883 A JPH0745883 A JP H0745883A JP 5209017 A JP5209017 A JP 5209017A JP 20901793 A JP20901793 A JP 20901793A JP H0745883 A JPH0745883 A JP H0745883A
- Authority
- JP
- Japan
- Prior art keywords
- composition
- piezoelectric ceramic
- site
- excessive
- ceramic composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 42
- 239000000919 ceramic Substances 0.000 title claims abstract description 29
- 238000010304 firing Methods 0.000 claims description 21
- 239000000843 powder Substances 0.000 claims description 12
- 229910010293 ceramic material Inorganic materials 0.000 claims description 5
- 239000000463 material Substances 0.000 abstract description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 21
- 239000012071 phase Substances 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000010955 niobium Substances 0.000 description 9
- 239000002994 raw material Substances 0.000 description 9
- 229910052759 nickel Inorganic materials 0.000 description 8
- 229910052758 niobium Inorganic materials 0.000 description 6
- 229910052745 lead Inorganic materials 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000013067 intermediate product Substances 0.000 description 4
- 238000009766 low-temperature sintering Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000001354 calcination Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229910019704 Nb2O Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052573 porcelain Inorganic materials 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000975 co-precipitation Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】この発明は、圧電体セラミックス
に関し、詳しくは、圧電アクチュエータやブザーなどの
材料として用いるのに適した圧電d定数の大きな圧電磁
器組成物に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to piezoelectric ceramics, and more particularly to a piezoelectric ceramic composition having a large piezoelectric d constant suitable for use as a material for piezoelectric actuators and buzzers.
【0002】[0002]
【従来の技術】圧電d定数の大きな圧電体セラミックス
として知られる、Pb(Ni1/3Nb2/3)O3−PbZ
rO3−PbTiO3を基本組成とする圧電体材料は、通
常、酸化鉛(PbO)、酸化ジルコニウム(Zr
O2)、酸化チタン(TiO2)、酸化ニッケル(Ni
O)、五酸化ニオブ(Nb2O5)などの酸化物原料を所
定の化学量論組成となるように調合し、ボールミルなど
を用いて混合分散させた後、所定の温度で仮焼し、さら
に、粉砕及びバインダー混合を行った後、所定の形状に
成形し、これを1200℃以上の高温で焼成して焼結反
応を行わせることにより製造されている。Known as large piezoelectric ceramics of the Related Art piezoelectric d constant, Pb (Ni 1/3 Nb 2/ 3) O 3 -PbZ
A piezoelectric material having a basic composition of rO 3 -PbTiO 3 is usually lead oxide (PbO), zirconium oxide (Zr
O 2 ), titanium oxide (TiO 2 ), nickel oxide (Ni
O), niobium pentoxide (Nb 2 O 5 ) and other oxide raw materials are mixed so as to have a predetermined stoichiometric composition, mixed and dispersed using a ball mill or the like, and then calcined at a predetermined temperature, Further, it is manufactured by crushing and mixing with a binder, molding into a predetermined shape, and firing at a high temperature of 1200 ° C. or higher to cause a sintering reaction.
【0003】[0003]
【発明が解決しようとする課題】しかし、上記従来の製
造方法では、仮焼後の圧電磁器組成物(セラミックス)
の焼成温度が1200℃以上と高温であるため、セラミ
ックスからのPbの蒸発が激しく、セラミックス内部に
圧電性のばらつきを生じさせるという問題点がある。However, in the above-mentioned conventional manufacturing method, the piezoelectric ceramic composition (ceramics) after calcination is used.
Since the firing temperature is as high as 1200 ° C. or higher, there is a problem that Pb evaporates from the ceramics violently, causing variations in piezoelectricity inside the ceramics.
【0004】また、Pbの蒸発を抑制しようとすると、
焼成時に密閉度の高いさや鉢を用いたり、さや鉢の内部
にPbOなどを入れて過剰のPb雰囲気を作るというよ
うな雰囲気制御技術を用いたりすることが必要になる。
そして、その結果として、製造工程が複雑になったり、
品質にばらつきが生じたりするという問題点がある。ま
た、さや鉢は、高温で繰り返して使用されることからそ
の寿命が短く、製造コストが増大するという問題点があ
る。In addition, when trying to suppress the evaporation of Pb,
At the time of firing, it is necessary to use a pod with a high degree of airtightness, or to use an atmosphere control technique such as putting PbO or the like inside the pod to create an excessive Pb atmosphere.
And as a result, the manufacturing process becomes complicated,
There is a problem in that the quality varies. Further, since the pod is repeatedly used at high temperature, it has a problem that its life is short and the manufacturing cost is increased.
【0005】さらに、圧電アクチュエータなどの一体焼
成型のセラミックスを製造するにあたっては、焼成温度
が高いため、内部電極材料として、Ptなどの高融点の
貴金属を用いることが必要になり、これがセラミックス
素子のコストを上昇させる原因になるという問題点があ
る。Further, when manufacturing integrally fired ceramics such as piezoelectric actuators, since the firing temperature is high, it is necessary to use a noble metal having a high melting point such as Pt as an internal electrode material. There is a problem that it causes the cost to rise.
【0006】この発明は、上記問題点を解決するもので
あり、低い温度で焼成することが可能で、Pbの蒸発が
少なく、焼成時に特殊なさや鉢を用いたり、Pbの雰囲
気制御を行ったりする必要がなく、また、圧電アクチュ
エータのような一体焼成型のセラミックス素子を製造す
る場合に、内部電極として高価なPtなどの材料を使用
する必要のない圧電磁器組成物を提供することを目的と
する。The present invention solves the above-mentioned problems, and can be fired at a low temperature, the evaporation of Pb is small, a special pod is used during firing, and the atmosphere of Pb is controlled. It is also an object of the present invention to provide a piezoelectric ceramic composition that does not need to use expensive materials such as Pt as internal electrodes when manufacturing a monolithic firing type ceramic element such as a piezoelectric actuator. To do.
【0007】[0007]
【課題を解決するための手段】上記目的を達成するため
に、この発明の圧電磁器組成物は、XPbβ(Niα /3
Nb2/3)O3−YPbZrO3−ZPbTiO3を基本組
成とし、一般記号ABO3で表されるペロブスカイト型
の圧電磁器組成物であって、X,Y,Zがそれぞれ、 0.20≦X≦0.60 0.15≦Y≦0.60 0.30≦Z≦0.60 の範囲にあり、かつ、BサイトのNi比率(α)が、 1<α<2 の範囲にあって、化学量論組成よりも過剰であるととも
に、AサイトのPb比率(β)が、 1<β≦1.06 の範囲にあって、化学量論組成よりも過剰であることを
特徴とする。[Means for Solving the Problems] To achieve the above object
In addition, the piezoelectric ceramic composition of the present invention is XPbβ (Niα /3
Nb2/3) O3-YPbZrO3-ZPbTiO3The basic set
Completion, general symbol ABO3Perovskite type represented by
Of the piezoelectric ceramic composition, wherein X, Y and Z are each in the range of 0.20 ≦ X ≦ 0.60 0.15 ≦ Y ≦ 0.60 0.30 ≦ Z ≦ 0.60, and , The B site Ni ratio (α) is in the range of 1 <α <2, and is more than the stoichiometric composition.
In addition, the Pb ratio (β) of the A site is in the range of 1 <β ≦ 1.06, which is in excess of the stoichiometric composition.
Characterize.
【0008】また、焼成前の圧電磁器材料粉末の比表面
積(SS)が、10m2/g以上(SS≧10m2/g)
であることを特徴とするFurther, the specific surface area (SS) of the piezoelectric ceramic material powder before firing is 10 m 2 / g or more (SS ≧ 10 m 2 / g)
Is characterized by
【0009】[0009]
【作用】化学量論組成を越えて存在するBサイトのNi
及びAサイトのPbが低温焼結を可能にする詳細なメカ
ニズムは必ずしも明らかではないが、現時点ではおよそ
次のように考えられる。[Function] B site Ni existing in excess of the stoichiometric composition
Although the detailed mechanism by which Pb of A site and Pb of A site enables low temperature sintering is not always clear, it is considered as follows at present.
【0010】Nbを多く含むチタン酸ジルコン酸鉛(P
ZT)系材料では、焼成途中に中間生成物としてパイロ
クロア相(PbとNbの酸化物)が生成しやすいことは
よく知られている。したがって、上記組成を有するこの
発明の圧電磁器組成物においては、焼成段階においてパ
イロクロア相からPb(Ni,Nb)O3が生成する過
程を経ることになる。Lead zirconate titanate containing a large amount of Nb (P
It is well known that the ZT) -based material easily forms a pyrochlore phase (oxide of Pb and Nb) as an intermediate product during firing. Therefore, the piezoelectric ceramic composition of the present invention having the above composition undergoes a process of producing Pb (Ni, Nb) O 3 from the pyrochlore phase in the firing step.
【0011】ところで、原料中のNi(NiO)はその
分散性が悪いため、焼成前のセラミックス中には、Ni
が過剰の部分とNiが不足している部分が生じる。By the way, since Ni (NiO) in the raw material has a poor dispersibility, Ni (NiO) is contained in the ceramic before firing.
Is excessive, and a portion lacking Ni occurs.
【0012】そして、Niが不足している系(部分)で
は、焼成中にパイロクロア相からPb(Ni,Nb)O
3への反応が完全には進まず、一部がPbとのNbで構
成されるパイロクロア構造の中間生成物(Pb2Nb2O
7)として残存しやすくなる。このパイロクロア相の焼
結性はチタン酸ジルコン酸鉛(Pb(Zr,Ti)O
3)の焼結性と同等であり、この相が残っていると低温
での焼結は望めない。In a system (part) lacking Ni,
Is Pb (Ni, Nb) O from the pyrochlore phase during firing.
3Reaction does not proceed completely, and part of it is composed of Pb and Nb.
Pyrochlore structure intermediate product (Pb2Nb2O
7) Is likely to remain. Burning this Pyrochlore phase
The binding property is lead zirconate titanate (Pb (Zr, Ti) O
It is equivalent to the sinterability of 3), and if this phase remains, it will be low temperature.
I can't hope to sinter.
【0013】一方、Niが過剰に存在する系(部分)で
は、パイロクロア相からPb(Ni,Nb)O3への反
応が完全に進行し、Pb2Nb2O7(パイロクロア構造
の中間生成物)として残存しにくくなり、また、パイロ
クロア相のうち、Pb3Nb2O 8はPb(Ni,Nb)
O3と反応する化合物であって、融点が925℃と低い
ために、液相となってPZTセラミックスの低温焼結に
寄与するものと考えられる。On the other hand, in a system (part) in which Ni is excessively present,
Is Pb (Ni, Nb) O from the pyrochlore phase.3Against
Response progresses completely, Pb2Nb2O7(Pyrochlore structure
It is difficult to remain as an intermediate product of
Of the Chlore phase, Pb3Nb2O 8 is Pb (Ni, Nb)
O3It is a compound that reacts with and has a low melting point of 925 ° C.
Therefore, it becomes a liquid phase for low temperature sintering of PZT ceramics.
It is considered to contribute.
【0014】加えて、AサイトのPb比率を過剰にする
ことにより、この液相の生成がさらに加速され、焼結温
度の低温化が促進されるものと考えられる。In addition, it is considered that by making the Pb ratio of the A site excessive, the production of this liquid phase is further accelerated and the lowering of the sintering temperature is promoted.
【0015】したがって、この発明の圧電磁器組成物の
ようにBサイトのNi及びAサイトのPbを化学量論組
成以上に含有させて、組成物の多くの部分でNi及びP
bが過剰に存在する状態を生じさせることにより、低温
で焼結することが可能になる。Therefore, as in the piezoelectric ceramic composition of the present invention, Ni in the B site and Pb in the A site are contained in a stoichiometric composition or more, and Ni and P are contained in most of the composition.
By producing a state in which b is present in excess, it becomes possible to sinter at a low temperature.
【0016】なお、この発明の圧電磁器組成物におい
て、X(すなわちPbのモル比)を0.20〜0.60
としたのは、Xが0.20未満では、中間生成物の生成
量が少なくなるため、焼結性への寄与が少なくなり、ま
た、Xの量が0.60を越えるとキュリー点(Tc)が
100℃以下となり、室温付近での共振周波数や変位特
性の温度安定性が悪くなることによる。In the piezoelectric ceramic composition of the present invention, X (that is, the molar ratio of Pb) is 0.20 to 0.60.
The reason is that when X is less than 0.20, the amount of the intermediate product produced is small, so that the contribution to the sinterability is small, and when the amount of X exceeds 0.60, the Curie point (Tc ) Becomes 100 ° C. or lower, and the temperature stability of the resonance frequency and displacement characteristics near room temperature deteriorates.
【0017】また、Y(すなわちPbZrO3のモル
比)を0.15〜0.60としたのは、YがMPBから
離れる0.15未満や、0.60を越える範囲では圧電
性が小さく、高い電気機械結合係数(Kp)や比誘電率
(ε33/ε0)を必要とする圧電アクチュエータやブザ
ーなどの用途には適用できなくなることによる。Further, Y (that is, the molar ratio of PbZrO 3 ) is set to 0.15 to 0.60 because the piezoelectricity is small when Y is less than 0.15 away from MPB or exceeds 0.60. This is because it cannot be applied to applications such as piezoelectric actuators and buzzers that require high electromechanical coupling coefficient (Kp) and relative permittivity (ε 33 / ε 0 ).
【0018】なお、Zは、1=X+Y+Zを満たすため
に、0.30〜0.60の範囲に限定される。Z is limited to the range of 0.30 to 0.60 in order to satisfy 1 = X + Y + Z.
【0019】また、αの値を1<α<2の範囲に限定し
たのは、αの値が1以下ではパイロクロア相の生成を促
進することになり、低温焼結性を得ることができず、ま
た、αの値が2以上になると焼成中にNiが粒内に固溶
して電気特性を大きく変化させてしまい、必要な特性を
得ることができなくなることによる。Further, the value of α is limited to the range of 1 <α <2 because when the value of α is 1 or less, the formation of the pyrochlore phase is promoted, and the low temperature sinterability cannot be obtained. Further, when the value of α is 2 or more, Ni is solid-dissolved in the grains during firing and the electric characteristics are largely changed, and it becomes impossible to obtain the required characteristics.
【0020】また、βの値を1<β≦1.06の範囲に
限定したのは、βの値が1以下の場合、低温焼結性を向
上させる効果が必ずしも十分ではなく、また、βの値が
1.06を越えると過剰のPbがガラス相となって焼結
体中に残り、圧電性の低下を招き、好ましくないことに
よる。Further, the value of β is limited to the range of 1 <β ≦ 1.06 because the effect of improving the low temperature sinterability is not always sufficient when the value of β is 1 or less, and β When the value of exceeds 1.06, excess Pb becomes a glass phase and remains in the sintered body, resulting in a decrease in piezoelectricity, which is not preferable.
【0021】なお、βの値に関しては、上記αとの関係
を問題にすることなく、βを単独で過剰にしても低温焼
結の効果を得ることは可能であるが、圧電性が大きく低
下するため、βのみを単独で過剰にすることは好ましく
ない。Regarding the value of β, it is possible to obtain the effect of low-temperature sintering even if β is excessive alone, without causing a problem with the relationship with α, but the piezoelectricity is greatly reduced. Therefore, it is not preferable to make β alone excessive.
【0022】さらに、焼成前の圧電磁器材料粉末の比表
面積(SS)を、10m2/g以上(SS≧10m2/
g)とすることにより、低温焼結性をさらに向上させ、
900℃を下回るような温度で焼結させることが可能に
なる。これは、圧電磁器材料粉末の粒子が微細化するこ
とにより、Ni及びPbの分散性が向上するためである
と考えられる。Further, the specific surface area (SS) of the piezoelectric ceramic material powder before firing is 10 m 2 / g or more (SS ≧ 10 m 2 /
g) further improves low temperature sinterability,
It becomes possible to sinter at a temperature below 900 ° C. It is considered that this is because the particles of the piezoelectric ceramic material powder are finely divided to improve the dispersibility of Ni and Pb.
【0023】[0023]
【実施例】以下に、この発明の実施例を示して、その特
徴とするところをさらに具体的に説明する。EXAMPLES Examples of the present invention will be shown below to more specifically describe the features thereof.
【0024】まず、出発原料として、Pb3O4,TiO
2,ZrO2,NiO,Nb2O5を用意し、これらの出発
原料を表1,表2に示すような組成となるように秤取
し、ボールミルを用いて湿式混合した後、700〜90
0℃で2時間仮焼し、粉砕(微粉砕)して仮焼粉末を得
た。それから、この仮焼粉末に酢酸ビニル系のバインダ
ーを加えてさらに湿式混合を行い、乾燥、造粒後に10
00〜2000kg/cm2の圧力で円板状に成形し、これ
を850〜1200℃で焼成し、直径10mm、厚さ1mm
の磁器円板を得た。First, as a starting material, Pb 3 O 4 , TiO
2 , ZrO 2 , NiO, Nb 2 O 5 were prepared, these starting materials were weighed so as to have the compositions shown in Tables 1 and 2, wet-mixed with a ball mill, and then 700-90.
It was calcined at 0 ° C. for 2 hours and pulverized (finely pulverized) to obtain a calcined powder. Then, a vinyl acetate-based binder was added to the calcined powder, and wet mixing was further performed, followed by drying and granulation.
It is shaped into a disc at a pressure of 00 to 2000 kg / cm 2 , and it is fired at 850 to 1200 ℃, diameter 10 mm, thickness 1 mm.
I got a porcelain disk.
【0025】そして、この磁器円板の表面(両主面)
に、銀ペーストを塗布し、800℃で2時間焼き付けて
銀電極を形成した後、80℃のシリコンオイル中で3k
V/mmの直流電圧を印加して分極処理を施し、圧電磁器
円板(試料)を得た。The surface of the porcelain disc (both main surfaces)
After applying silver paste to the above and baking at 800 ° C for 2 hours to form a silver electrode, 3k in silicon oil at 80 ° C
A DC voltage of V / mm was applied and polarization was performed to obtain a piezoelectric ceramic disc (sample).
【0026】そして、これらの試料について、比誘電率
(ε33/ε0)、電気機械結合係数(Kp)、及び機械
的品質係数(Qm)を測定した。その結果を表1,表2
に示す。なお、表1,表2において、試料No.に*印を付
したものは、この発明の範囲外の組成を有する試料であ
る。The relative permittivity (ε 33 / ε 0 ), electromechanical coupling coefficient (Kp), and mechanical quality coefficient (Qm) of these samples were measured. The results are shown in Table 1 and Table 2.
Shown in. In Tables 1 and 2, the sample numbers marked with * are samples having compositions outside the scope of the present invention.
【0027】[0027]
【表1】 [Table 1]
【0028】[0028]
【表2】 [Table 2]
【0029】表1,表2に示すように、この発明の実施
例にかかる各試料については、比誘電率(ε33/
ε0)、電気機械結合係数(Kp)、及び機械的品質係
数(Qm)に関し、ほぼ良好な結果が得られていること
がわかる。As shown in Table 1 and Table 2, the relative permittivity (ε 33 /
It can be seen that, regarding ε 0 ), the electromechanical coupling coefficient (Kp), and the mechanical quality coefficient (Qm), almost good results are obtained.
【0030】なお、αについては、表2の試料No.16
(α=1.0)と試料No.17(α=1.5)の比較に
みられるように、αの値が1以下の場合には、パイロク
ロア相の生成を促進する結果となり、十分な低温焼結性
を得ることができないことがわかる。また、試料No.2
1(α=2.5)にみられるように、αの値が2以上に
なると焼成中にNiが粒内に固溶して電気特性が大きく
変化する(すなわち、Kpが小さくなり、Qmが大きく
なる)ため好ましくないことがわかる。Regarding α, sample No. 16 in Table 2
As can be seen from the comparison between (α = 1.0) and sample No. 17 (α = 1.5), when the value of α is 1 or less, the result is that the formation of the pyrochlore phase is promoted, which is sufficient. It can be seen that the low temperature sinterability cannot be obtained. Also, sample No. 2
As shown in 1 (α = 2.5), when the value of α is 2 or more, Ni dissolves into the grains during firing and the electrical characteristics change significantly (that is, Kp decreases and Qm decreases). It becomes unfavorable because it becomes large).
【0031】また、βについては、表1の試料No.12
(β=1.02)と試料No.13(β=0.98)の比
較にみられるように、βが1以下になると、βを1より
大きくすることにより得られる効果が失われ、また、表
2の試料No.18と20の比較にみられるように、βの
値が1.06を越えると過剰のPbがガラス相となって
焼結体中に残り、圧電性の低下を招くことがわかる。Regarding β, sample No. 12 in Table 1
As can be seen from the comparison between (β = 1.02) and sample No. 13 (β = 0.98), when β becomes 1 or less, the effect obtained by making β larger than 1 is lost, and As can be seen from the comparison between sample Nos. 18 and 20 in Table 2, when the value of β exceeds 1.06, excess Pb becomes a glass phase and remains in the sintered body, resulting in a decrease in piezoelectricity. I understand.
【0032】なお、βの値に関しては、αとの関係を問
題にすることなく、βを単独で過剰にしても低温焼結の
効果を得ることは可能であるが、表2の試料No.16
(α=1.0,β=1.02でβのみ過剰)と試料No.
17(α=1.5,β=1.02でαとβの両方が過
剰)の比較にみられるように、βのみを単独で過剰にし
た場合には、圧電性が大きく低下するため好ましくな
い。Regarding the value of β, it is possible to obtain the effect of low-temperature sintering even if β is excessive alone, without making the relationship with α a problem. 16
(Α = 1.0, β = 1.02, only β is excessive) and sample No.
As shown in the comparison of 17 (α = 1.5, β = 1.02, both α and β are excessive), when β alone is excessive, the piezoelectricity is significantly decreased, which is preferable. Absent.
【0033】また、図1に、X=0.40,Y=0.2
3,Z=0.38の組成において、α=1.0及びα=
1.5(ともにβ=1.00)とした場合の焼結性、す
なわち、焼成温度と焼結密度(焼結体の密度)との関係
を示すとともに、図2に、X=0.40,Y=0.2
3,Z=0.38の組成において、α=1.0,β=
1.00とした場合及びα=1.5,β=1.02とし
た場合の焼結性を示す。Further, in FIG. 1, X = 0.40, Y = 0.2
3, in the composition of Z = 0.38, α = 1.0 and α =
The sinterability in the case of 1.5 (both β = 1.00), that is, the relationship between the firing temperature and the sintered density (density of the sintered body) is shown, and X = 0.40 in FIG. , Y = 0.2
3, in the composition of Z = 0.38, α = 1.0, β =
Sinterability is shown when 1.00 and when α = 1.5 and β = 1.02.
【0034】図1,図2より、NiとPbの両方を過剰
にした原料(α=1.5,β=1.02)を用いた場合
には、Niのみを過剰にした原料(α=1.5,β=
1.00)を用いた場合よりも低温焼結性が向上してい
ることがわかる。From FIGS. 1 and 2, when the raw material in which both Ni and Pb are excessive (α = 1.5, β = 1.02) is used, the raw material in which only Ni is excessive (α = 1.5, β =
It can be seen that the low temperature sinterability is improved as compared with the case where 1.00) is used.
【0035】さらに、仮焼後に原料粉末(圧電磁器材料
粉末)を微粉砕することにより、さらに、低温焼結性を
高めることが可能であり、試料No.17(特に微粉砕し
ない原料粉末を使用)と試料No.18(微粉砕した原料
粉末を使用)との比較にみられるように、Ni及びPb
が過剰で、かつ、仮焼後に微粉砕した原料粉末を用いる
ことにより、900℃を下回るような低い焼成温度(試
料No.18では850℃)で焼成しても十分な圧電性が
得られることがわかる。なお、この発明では、粉砕粒度
の指標として比表面積(SS)の値を用いたが、このS
S値が10m2/gより小さくなると900℃を下回る
ような低温で焼成できるような低温焼結性を得ることは
困難になる。したがって、900℃を下回るような温度
で焼成することが可能な低温焼結性と圧電性とを両立さ
せるためには、比表面積を10m 2/g以上にすること
が必要になる。Furthermore, after calcination, the raw material powder (piezoelectric ceramic material
By finely pulverizing (powder), low temperature sinterability is further improved.
It is possible to increase sample No. 17 (especially by pulverizing
No raw material powder used) and Sample No. 18 (finely pulverized raw material)
Ni and Pb, as seen in comparison with powder)
Is excessive, and the raw material powder finely pulverized after calcination is used
As a result, low firing temperature (below 900 ° C)
Material No. 18 has sufficient piezoelectricity even if fired at 850 ° C.
You can see that you can get it. In this invention, the crushed particle size
The value of specific surface area (SS) was used as an index of
S value is 10m2If it is smaller than / g, it falls below 900 ° C.
To obtain low temperature sinterability that can be fired at such a low temperature
It will be difficult. Therefore, temperatures below 900 ° C
Compatible with low temperature sinterability and piezoelectricity
In order to have a specific surface area of 10 m 2 / g or more
Will be required.
【0036】なお、この発明の圧電磁器組成物は、上記
実施例に限定されるものではなく、発明の要旨の範囲内
において、その組成や製造方法を変化させるなどの応
用、変形を加えることが可能である。The piezoelectric ceramic composition of the present invention is not limited to the above-mentioned embodiments, and may be applied and modified within the scope of the gist of the invention, such as changing its composition and manufacturing method. It is possible.
【0037】[0037]
【発明の効果】上述のように、この発明の圧電磁器組成
物は、XPbβ(Niα/3Nb2/3)O3−YPbZrO
3−ZPbTiO3を基本組成とし、一般記号ABO3で
表されるペロブスカイト型の圧電磁器組成物の、X,
Y,Zを上記所定の範囲とし、かつ、BサイトのNi比
率(α)を1<α<2と化学量論組成よりも過剰にする
とともに、AサイトのPb比率(β)を1<β≦1.0
6と化学量論組成よりも過剰にしているので、特に、共
沈法や、ゾル−ゲル法などの化学的合成方法を用いるこ
となく、従来の酸化物を混合して合成する方法をとりな
がら、必要な圧電性を確保しつつ焼成温度を従来よりも
相当に低下させることが可能になる。According to the present invention as described above, the piezoelectric ceramic composition of the present invention, XPbβ (Niα / 3 Nb 2/3 ) O 3 -YPbZrO
3 -ZPbTiO 3 as a basic composition, the perovskite type represented by the general symbol ABO 3 of the piezoelectric ceramic composition, X,
Y and Z are set to the above predetermined ranges, the Ni ratio (α) of the B site is set to 1 <α <2, which is in excess of the stoichiometric composition, and the Pb ratio (β) of the A site is set to 1 <β. ≦ 1.0
6 and the stoichiometric composition are excessive, so in particular, without using a chemical synthesis method such as a coprecipitation method or a sol-gel method, a conventional method of mixing oxides is used. It becomes possible to lower the firing temperature considerably as compared with the conventional one while ensuring the required piezoelectricity.
【0038】さらに、焼成前の原料粉末を微粉砕してそ
の比表面積(SS)を10m2/g以上(SS≧10m2
/g)とすることにより、さらに低温で焼結させること
が可能になる。Further, the raw material powder before firing is finely pulverized to have a specific surface area (SS) of 10 m 2 / g or more (SS ≧ 10 m 2
/ G) makes it possible to sinter at a lower temperature.
【0039】したがって、この発明の圧電磁器組成物に
よれば、従来の圧電磁器組成物を製造する場合のよう
に、焼成時に密閉度の高い特殊なさや鉢を用いたり、P
bの雰囲気制御を行ったりする必要がなくなるととも
に、焼成温度が低くなることから、さや鉢の寿命を大幅
に向上させることが可能になる。さらに、一体焼成の圧
電アクチュエータを製造する場合においても、内部電極
として、Ptなどの高融点の貴金属を用いる必要がな
く、比較的安価なAg−Pd合金などを使用することが
可能になるため、製造コストを大幅に削減することがで
きる。Therefore, according to the piezoelectric ceramic composition of the present invention, as in the case of producing a conventional piezoelectric ceramic composition, a special pod having a high degree of sealing is used at the time of firing, or P
Since it is not necessary to control the atmosphere of b and the firing temperature is lowered, the life of the pod can be significantly improved. Further, even in the case of manufacturing the integrally fired piezoelectric actuator, since it is not necessary to use a high melting point noble metal such as Pt as the internal electrode, it is possible to use a relatively inexpensive Ag—Pd alloy or the like. Manufacturing costs can be significantly reduced.
【図1】X=0.40,Y=0.23,=0.38の組
成において、α=1.0及びα=1.5(ともにβ=
1.00)とした場合の焼結性を示す線図である。FIG. 1 is a composition in which X = 0.40, Y = 0.23, = 0.38, α = 1.0 and α = 1.5 (both β =
It is a diagram showing sinterability in the case of (1.00).
【図2】X=0.40,Y=0.23,=0.38の組
成において、α=1.0,β=1.00とした場合と、
α=1.5,β=1.02とした場合の焼結性を示す線
図である。FIG. 2 shows the case where α = 1.0 and β = 1.00 in the composition of X = 0.40, Y = 0.23, = 0.38, and
FIG. 3 is a diagram showing sinterability when α = 1.5 and β = 1.02.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 C04B 35/49 Z ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI technical display location C04B 35/49 Z
Claims (2)
bZrO3−ZPbTiO3を基本組成とし、一般記号A
BO3で表されるペロブスカイト型の圧電磁器組成物で
あって、X,Y,Zがそれぞれ、 0.20≦X≦0.60 0.15≦Y≦0.60 0.30≦Z≦0.60 の範囲にあり、かつ、BサイトのNi比率(α)が、 1<α<2 の範囲にあって、化学量論組成よりも過剰であるととも
に、AサイトのPb比率(β)が、 1<β≦1.06 の範囲にあって、化学量論組成よりも過剰であることを
特徴とする圧電磁器組成物。1. A XPbβ (Niα / 3 Nb 2/3) O 3 -YP
The basic composition is bZrO 3 —ZPbTiO 3 and the general symbol A
A perovskite type piezoelectric ceramic composition represented by BO 3 , wherein X, Y and Z are respectively 0.20 ≦ X ≦ 0.60 0.15 ≦ Y ≦ 0.60 0.30 ≦ Z ≦ 0. And the Ni ratio (α) of the B site is in the range of 1 <α <2, which is in excess of the stoichiometric composition, and the Pb ratio (β) of the A site is , 1 <β ≦ 1.06, which is in excess of stoichiometric composition.
(SS)が、10m2/g以上(SS≧10m2/g)で
あることを特徴とする請求項1記載の圧電磁器組成物。2. The piezoelectric ceramic composition according to claim 1, wherein the specific surface area (SS) of the piezoelectric ceramic material powder before firing is 10 m 2 / g or more (SS ≧ 10 m 2 / g).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20901793A JP3345974B2 (en) | 1993-07-29 | 1993-07-29 | Piezoelectric ceramic composition |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20901793A JP3345974B2 (en) | 1993-07-29 | 1993-07-29 | Piezoelectric ceramic composition |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0745883A true JPH0745883A (en) | 1995-02-14 |
JP3345974B2 JP3345974B2 (en) | 2002-11-18 |
Family
ID=16565894
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20901793A Expired - Fee Related JP3345974B2 (en) | 1993-07-29 | 1993-07-29 | Piezoelectric ceramic composition |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3345974B2 (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0715360A1 (en) * | 1994-11-28 | 1996-06-05 | Murata Manufacturing Co., Ltd. | Piezoelectric ceramic composition |
JP2005219992A (en) * | 2004-02-09 | 2005-08-18 | Murata Mfg Co Ltd | Piezoelectric ceramic composition and piezoelectric element |
WO2006046597A1 (en) * | 2004-10-26 | 2006-05-04 | Murata Manufacturing Co., Ltd | Conductive paste and stacked type piezoelectric ceramic component |
JP2007223840A (en) * | 2006-02-23 | 2007-09-06 | Fujifilm Corp | Lead zirconate titanate-based composition, method of manufacturing the same, piezoelectric body and piezoelectrd element |
JP2007284344A (en) * | 2006-04-13 | 2007-11-01 | Agency For Science Technology & Research | Ferroelectric ceramic material with low sintering temperature |
US7504042B2 (en) | 2004-10-01 | 2009-03-17 | Murata Manufacturing Co., Ltd. | Piezoelectric ceramic composition and piezoelectric ceramic electronic component |
EP2978034A1 (en) * | 2014-07-01 | 2016-01-27 | Seiko Epson Corporation | Piezoelectric element |
-
1993
- 1993-07-29 JP JP20901793A patent/JP3345974B2/en not_active Expired - Fee Related
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0715360A1 (en) * | 1994-11-28 | 1996-06-05 | Murata Manufacturing Co., Ltd. | Piezoelectric ceramic composition |
JP2005219992A (en) * | 2004-02-09 | 2005-08-18 | Murata Mfg Co Ltd | Piezoelectric ceramic composition and piezoelectric element |
JP4506187B2 (en) * | 2004-02-09 | 2010-07-21 | 株式会社村田製作所 | Piezoelectric ceramic composition and piezoelectric element |
US7504042B2 (en) | 2004-10-01 | 2009-03-17 | Murata Manufacturing Co., Ltd. | Piezoelectric ceramic composition and piezoelectric ceramic electronic component |
WO2006046597A1 (en) * | 2004-10-26 | 2006-05-04 | Murata Manufacturing Co., Ltd | Conductive paste and stacked type piezoelectric ceramic component |
JP2007223840A (en) * | 2006-02-23 | 2007-09-06 | Fujifilm Corp | Lead zirconate titanate-based composition, method of manufacturing the same, piezoelectric body and piezoelectrd element |
JP2007284344A (en) * | 2006-04-13 | 2007-11-01 | Agency For Science Technology & Research | Ferroelectric ceramic material with low sintering temperature |
EP2978034A1 (en) * | 2014-07-01 | 2016-01-27 | Seiko Epson Corporation | Piezoelectric element |
US9887344B2 (en) | 2014-07-01 | 2018-02-06 | Seiko Epson Corporation | Piezoelectric element, piezoelectric actuator device, liquid ejecting head, liquid ejecting apparatus, and ultrasonic measuring apparatus |
Also Published As
Publication number | Publication date |
---|---|
JP3345974B2 (en) | 2002-11-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4926389B2 (en) | Crystal-oriented ceramics and method for producing the same | |
JP4849338B2 (en) | Piezoelectric ceramic composition | |
CN105461303B (en) | Piezoelectric composition, piezoelectric element and sputtering target material | |
JP4995412B2 (en) | Piezoelectric ceramic composition and piezoelectric element using the same | |
JP2002308672A (en) | Method for manufacturing piezoelectric ceramic, piezoelectric ceramic and piezoelectric ceramic device | |
JP4140796B2 (en) | Piezoelectric ceramics | |
US20070120446A1 (en) | Piezoelectric ceramic composition and piezoelectric element comprising the composition | |
JP3345974B2 (en) | Piezoelectric ceramic composition | |
JP4650695B2 (en) | Piezoelectric ceramic composition and piezoelectric ceramic electronic component | |
JP3384048B2 (en) | Piezoelectric ceramic composition | |
JP2002265262A (en) | Piezoelectric ceramic | |
JPH10324569A (en) | Piezoelectric ceramic composition | |
JP2002348173A (en) | Piezoelectric ceramic material and its manufacturing method | |
JPWO2006093002A1 (en) | Piezoelectric ceramic composition | |
JP2841911B2 (en) | PZT ceramic composition | |
JP2006096626A (en) | Method of manufacturing piezoelectric ceramic, method of manufacturing piezoelectric element, and piezoelectric element | |
JP2001048641A (en) | Piezoelectric porcelain composition | |
KR102069360B1 (en) | Lead-free piezoceramics composition and manufacturing the same | |
JP2002338349A (en) | Piezoelectric ceramics | |
JP2006143540A (en) | Piezoelectric ceramic composition and its production method | |
JP2016179931A (en) | Piezoelectric ceramic and piezoelectric element prepared therewith | |
JP3966882B2 (en) | Method for producing piezoelectric ceramic composition | |
JP2001089232A (en) | Porcelain composition | |
KR101635993B1 (en) | Lead-free piezoelectric ceramics and Actuator using the same | |
JP2005041753A (en) | Piezoelectric ceramic |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20020806 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080906 Year of fee payment: 6 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080906 Year of fee payment: 6 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090906 Year of fee payment: 7 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090906 Year of fee payment: 7 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100906 Year of fee payment: 8 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100906 Year of fee payment: 8 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110906 Year of fee payment: 9 |
|
LAPS | Cancellation because of no payment of annual fees |