JPH07321251A - Package for electronic element - Google Patents
Package for electronic elementInfo
- Publication number
- JPH07321251A JPH07321251A JP6138042A JP13804294A JPH07321251A JP H07321251 A JPH07321251 A JP H07321251A JP 6138042 A JP6138042 A JP 6138042A JP 13804294 A JP13804294 A JP 13804294A JP H07321251 A JPH07321251 A JP H07321251A
- Authority
- JP
- Japan
- Prior art keywords
- package
- moisture
- electronic element
- moisture absorbing
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000126 substance Substances 0.000 claims abstract description 28
- 239000000853 adhesive Substances 0.000 claims abstract description 21
- 230000001070 adhesive effect Effects 0.000 claims abstract description 21
- 229920005989 resin Polymers 0.000 claims description 30
- 239000011347 resin Substances 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 21
- 230000035699 permeability Effects 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical class [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229920002050 silicone resin Polymers 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims description 2
- 239000000741 silica gel Substances 0.000 claims description 2
- 229910002027 silica gel Inorganic materials 0.000 claims description 2
- 238000007789 sealing Methods 0.000 abstract description 23
- 230000000694 effects Effects 0.000 abstract description 5
- 230000002411 adverse Effects 0.000 abstract description 2
- 230000002542 deteriorative effect Effects 0.000 abstract description 2
- 230000000149 penetrating effect Effects 0.000 abstract 2
- 230000002238 attenuated effect Effects 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000003230 hygroscopic agent Substances 0.000 description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 13
- 238000010521 absorption reaction Methods 0.000 description 8
- 239000002250 absorbent Substances 0.000 description 7
- 230000002745 absorbent Effects 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 7
- 239000011521 glass Substances 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 229920000106 Liquid crystal polymer Polymers 0.000 description 2
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000009545 invasion Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Lead Frames For Integrated Circuits (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、電子素子のパッケージ
の構成に関し、特に、外部からの水分等を完全に防ぐこ
とのできる密封状態の電子素子パッケージに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of an electronic device package, and more particularly to a sealed electronic device package which can completely prevent moisture and the like from the outside.
【０００２】[0002]
【従来の技術】従来、半導体集積回路等の電子素子を水
分等から保護するために各種のパッケージに封止するこ
とが一般的に実施されている。古くは金属のカンタイプ
の容器に電子素子を封止する、いわゆるカンパッケージ
もしくはカンタイプと呼ばれるものがある。その模式的
構成断面図を図９に示す。これは基台となるガラスなど
の絶縁層、もしくは一つの電極としての導体層の上に、
半導体素子などの電子素子５が接着されてボンディング
ワイヤ９でリード（端子）３２とつながれている。端子
３２は、ステム（基台）１０となるカンパッケージの底
板部分にハーメチックシール４１として絶縁支持されて
いる。そして金属性の蓋（キャップ）１１が底板部分と
気密溶接されて電子素子５が封止されている構造であ
る。2. Description of the Related Art Conventionally, it has been generally practiced to seal electronic devices such as semiconductor integrated circuits in various packages in order to protect them from moisture. There is a so-called can package or can type in which an electronic element is sealed in a metal can type container in old times. A schematic sectional view of the structure is shown in FIG. This is on the insulating layer such as glass that becomes the base, or on the conductor layer as one electrode,
An electronic element 5 such as a semiconductor element is bonded and connected to a lead (terminal) 32 by a bonding wire 9. The terminal 32 is insulated and supported as a hermetic seal 41 on the bottom plate portion of the can package that serves as the stem (base) 10. A metallic lid 11 is hermetically welded to the bottom plate portion to seal the electronic element 5.
【０００３】このカンパッケージは図示するように複雑
な構造であり、製造に手間が掛かる難点があるが、電子
素子５にストレスが掛からない中空構造である利点は大
きいことから、最近では図１０に示す構成のものが提案
されている。これは、金属製の蓋状の上下の容器１、２
を絶縁層となる接着材などの封止用樹脂４を介して端子
３２を挟み込んで接着する構造である。中の電子素子５
を固定する方法はカンパッケージとほぼ同様である。容
器の上蓋１には小さい小穴１６が設けられていて、上蓋
１を接着後、内部に発生するガスを抜き取って、真空も
しくは窒素ガス(N2)を封入してロー付け１７などで封止
する。この構成は容易に製造することが可能なので安価
に作ることができる。いずれにしても封止部分は局部的
または全体的にかなり高温になることがあるので、熱膨
張係数をなるべく合わせてクラック等が生じないように
材料を選択して形成している。つまり、このような小さ
な素子のパッケージ内部に水分を侵入させない、という
考え方で従来からパッケージが作られているため、パッ
ケージ内部に水分を吸収するような手段を設けることは
実施されることはなかった。Although this can package has a complicated structure as shown in the figure and is difficult to manufacture, it has a great advantage that it is a hollow structure in which the electronic element 5 is not stressed. The configuration shown is proposed. This is the upper and lower metal lid-shaped containers 1, 2.
Is a structure in which the terminal 32 is sandwiched and adhered via a sealing resin 4 such as an adhesive that serves as an insulating layer. Electronic element 5 inside
The method of fixing is almost the same as the can package. A small hole 16 is provided in the upper lid 1 of the container. After the upper lid 1 is bonded, the gas generated inside is extracted, and vacuum or nitrogen gas (N 2 ) is sealed and sealed with brazing 17 or the like. . Since this structure can be easily manufactured, it can be manufactured at low cost. In any case, the sealed portion may be locally or wholly at a considerably high temperature, so the material is selected and formed so that cracks and the like do not occur by adjusting the thermal expansion coefficient as much as possible. That is, since a package has been conventionally made with the idea of preventing moisture from entering the package of such a small element, provision of means for absorbing moisture has not been implemented inside the package. .
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、しかし
接着部分が樹脂であるため、樹脂そのものの特性および
樹脂が熱に弱いことも重なって、水分が内部に進入して
しまうことが避けられず、電子素子にとって劣化が速い
という問題がある。However, since the adhesive portion is made of resin, it is unavoidable that moisture enters the inside due to the characteristics of the resin itself and the fact that the resin is weak against heat. There is a problem that the element deteriorates quickly.
【０００５】従って本発明の目的は、侵入してくる水分
に対して耐久性のある電子素子用パッケージを提供する
ことである。Therefore, it is an object of the present invention to provide a package for electronic devices which is durable against invading moisture.
【０００６】[0006]
【課題を解決するための手段】上記の課題を解決するた
め本発明の構成は、外部から侵入する水分を吸収するよ
うに吸湿手段をパッケージ内部領域に設け、容易な構成
で素子の寿命を延ばすことを要旨とする。また関連発明
の構成は、前記吸湿手段が吸湿物質と粘着性物質との混
合物で構成されていることや、そのほか、前記粘着性物
質が透湿率の大きい樹脂もしくはヤング率の小さな樹脂
であること、前記粘着性物質がシリコーン樹脂であるこ
とを特徴としている。In order to solve the above-mentioned problems, the structure of the present invention is provided with a moisture absorbing means in the package internal region so as to absorb moisture invading from the outside, and extends the life of the element with a simple structure. That is the summary. Further, in the configuration of the related invention, the moisture absorbing means is composed of a mixture of a moisture absorbing substance and an adhesive substance, and in addition, the adhesive substance is a resin having a large moisture permeability or a resin having a small Young's modulus. The adhesive substance is a silicone resin.
【０００７】[0007]
【作用】電子素子を封止するパッケージ内部領域に吸湿
手段が存在すると、外部から侵入してきた水分はこの吸
湿手段に吸収される。混合される樹脂などの粘着性物質
は柔らかいので吸湿物質が水分を吸着した場合に膨張し
て生じる膨張応力を緩和させ、周囲に余計な応力を与え
ない。また、粘着性物質は透湿率が大きいため、吸着手
段の吸湿能力を阻害しない。When the moisture absorbing means is present inside the package for sealing the electronic element, the moisture invading from the outside is absorbed by the moisture absorbing means. Since the adhesive substance such as resin to be mixed is soft, the hygroscopic substance relaxes the expansion stress caused by the expansion when moisture is adsorbed, and does not give extra stress to the surroundings. In addition, since the adhesive substance has a high moisture permeability, it does not impair the moisture absorption capability of the adsorption means.
【０００８】[0008]
【発明の効果】パッケージ内部領域に吸湿手段を有する
構成であるため、パッケージ内に水分が侵入したとして
も、パッケージ内で露結することがない。つまり吸湿能
力が衰えるまで電子素子は水分の悪影響から保護され電
子素子の寿命が延びる。また従って従来のパッケージタ
イプでも、水分が侵入する割合はほぼ同じ程度であるの
で、吸湿手段を備えることで内部で水分が吸着されて劣
化の速度は抑制される。またこの吸湿手段は電子素子封
止時に発生するパッケージ内のアウトガスをも吸収する
ことができる。Since the moisture absorbing means is provided in the package inner region, even if moisture enters the package, it does not condense in the package. In other words, the electronic element is protected from the adverse effect of moisture until the moisture absorption capacity declines, and the life of the electronic element is extended. Therefore, even in the conventional package type, the rate of moisture infiltration is almost the same, and therefore, by providing the moisture absorbing means, moisture is adsorbed inside and the rate of deterioration is suppressed. Further, this moisture absorbing means can also absorb outgas in the package generated when the electronic element is sealed.
【０００９】[0009]
【実施例】以下、本発明を具体的な実施例に基づいて説
明する。 （第一実施例）図１は、本発明の電子素子用パッケージ
（以下、単にパッケージと記す）の全体の構造を示す断
面図である。リードを打ち抜き等の加工で一体的に成形
してあるリードフレーム３上の所定の位置に電子素子５
を樹脂等のダイボンド用材料６で、場合によってははん
だ７で接合し、電子素子５が搭載されたリードフレーム
３のチップ台部分３１を下蓋２の所定の位置にダイボン
ド用材料６で固定する（ダイボンディング）。そして予
め上蓋１の内側に吸湿手段である吸湿剤８を塗布してお
く。吸湿剤８は、粒状の吸湿物質８１と、粘着性物質で
あるペースト状の樹脂８２を混合したものであり、上蓋
１にこの吸湿剤８を塗布したのち、加熱や紫外線の照射
などにより硬化させて固着させておく。EXAMPLES The present invention will be described below based on specific examples. (First Embodiment) FIG. 1 is a sectional view showing the entire structure of an electronic element package (hereinafter simply referred to as a package) of the present invention. The electronic element 5 is placed at a predetermined position on the lead frame 3 in which the leads are integrally formed by punching or the like.
Are bonded with a die-bonding material 6 such as a resin, and in some cases with solder 7, and the chip base portion 31 of the lead frame 3 on which the electronic element 5 is mounted is fixed to a predetermined position of the lower lid 2 with the die-bonding material 6. (Die bonding). Then, the hygroscopic agent 8 as a hygroscopic means is applied to the inside of the upper lid 1 in advance. The hygroscopic agent 8 is a mixture of a granular hygroscopic substance 81 and a paste-like resin 82 that is an adhesive substance. After the hygroscopic agent 8 is applied to the upper lid 1, it is cured by heating or irradiation with ultraviolet rays. And fix it.
【００１０】上下の蓋（上蓋１、下蓋２）の材料は、透
湿性の小さい材料が望まれ、金属材料もしくはセラミッ
ク材料が望ましく、樹脂材料としては吸湿の極めて小さ
い液晶ポリマーが良い。また上蓋１には、この蓋１を接
着後にパッケージ内を抜気するための小穴を設ける必要
がない。またリードフレーム３の材料としては銅(Cu)系
材料、鉄(Fe)系材料等の金属材料を用い、ボンディング
する部分とはんだ付けする部分にニッケル(Ni)、錫(S
n)、銀(Ag)、金(Au)などのメッキ処理を施す。そして封
止材料である封止用樹脂４の材料としては、接着性の良
いエポキシ樹脂が良く、セラミックやガラス等よりなる
微細な絶縁性のフィラー（粒子）をエポキシ樹脂に混入
させ、水蒸気の混入経路を狭めることができる。Materials for the upper and lower lids (upper lid 1 and lower lid 2) are desired to have a low moisture permeability, a metal material or a ceramic material is desirable, and a liquid crystal polymer having an extremely low moisture absorption is preferable as the resin material. Further, it is not necessary to provide the upper lid 1 with a small hole for venting the inside of the package after the lid 1 is bonded. Further, as the material of the lead frame 3, a metal material such as a copper (Cu) -based material, an iron (Fe) -based material is used, and nickel (Ni), tin (S
n), silver (Ag), gold (Au), etc. are plated. As a material of the sealing resin 4 which is a sealing material, an epoxy resin having good adhesiveness is preferable, and fine insulating fillers (particles) made of ceramic or glass are mixed into the epoxy resin to mix water vapor. The route can be narrowed.
【００１１】また吸湿物質８１としては、活性炭、シリ
カゲル、活性アルミナ、吸水性ポリマー等がある。吸湿
物質と混入させる粘着性物質８２としては、侵入した水
分を効率良く吸湿物質８１に吸収させるため、透湿率の
大きな材料が望まれる。また吸湿物質８１は一般に吸湿
により膨張するため、混入する樹脂材料８２はヤング率
の小さな柔らかい材料が望まれる。以上の材料特性を満
足するものとしてシリコーン系樹脂があげられる。The hygroscopic substance 81 includes activated carbon, silica gel, activated alumina, water-absorbing polymer and the like. As the adhesive substance 82 mixed with the hygroscopic substance, a material having a high moisture permeability is desired so that the moisture absorbing substance 81 can efficiently absorb the invading water. Further, since the hygroscopic substance 81 generally expands due to moisture absorption, it is desired that the resin material 82 mixed in is a soft material having a small Young's modulus. A silicone resin is one that satisfies the above-mentioned material characteristics.
【００１２】上蓋１と下蓋２は透湿率の小さい金属材料
であるため、水分を通過させない。水分が通過する可能
性があるのは透湿率の大きい封止用樹脂（封止用材料）
４の部分である。この部分はリード３２、封止用樹脂
４、蓋の金属材料と三種類の材料が近接しているため、
電子素子５を回路で使用する際に発生する熱などで、熱
膨張のわずかな差から接着部分が弱くなるなどして、外
気に含まれる水分が通過する可能性が出てくる。従っ
て、水分がパッケージ内部に侵入してくる。この水分を
吸湿剤８が吸着してしまうので、パッケージ内部の中空
部分のいずれか、特に電子素子５部分に水分が結露して
しまうことがない。従って電子素子５はショートや酸化
等による変質が生じることがなく、製品の耐久性を延ば
す効果をもたらす。Since the upper lid 1 and the lower lid 2 are made of a metal material having a low moisture permeability, they do not allow water to pass through. Water may pass through the sealing resin with high moisture permeability (sealing material)
It is the fourth part. Since the lead 32, the sealing resin 4, and the metal material of the lid are close to each other in this portion,
Due to heat generated when the electronic element 5 is used in a circuit, the adhesive portion may be weakened due to a slight difference in thermal expansion, and moisture contained in the outside air may pass through. Therefore, moisture enters the inside of the package. Since the moisture absorbent 8 adsorbs this moisture, the moisture does not condense on any of the hollow portions inside the package, particularly on the electronic element 5 portion. Therefore, the electronic element 5 is not deteriorated due to a short circuit or oxidation, and has the effect of extending the durability of the product.
【００１３】（第二実施例）図２に示す模式的なパッケ
ージ断面図は、微細に粉砕した吸湿物質８１と粘着性物
質８２の混合された吸湿剤８を、パッケージの上蓋１お
よび下蓋２の内壁すべてに塗布しておく構成で、ダイボ
ンディングはこの塗布された吸湿剤８の上になされる構
成である。このようにしても吸湿剤８は硬化されている
ため、電子素子５を搭載したリードフレーム３のチップ
台部分３１を樹脂で接着しても十分接着強度は維持され
る。(Second Embodiment) The schematic package cross-sectional view shown in FIG. 2 shows that the moisture absorbent 8 in which finely pulverized moisture absorbing substance 81 and adhesive substance 82 are mixed is used for the upper lid 1 and the lower lid 2 of the package. The coating is applied to all the inner walls of the above, and the die bonding is performed on the applied moisture absorbent 8. Even in this case, since the hygroscopic agent 8 is hardened, even if the chip base portion 31 of the lead frame 3 on which the electronic element 5 is mounted is adhered with resin, sufficient adhesive strength is maintained.
【００１４】（第三実施例）また図３に示す模式的なパ
ッケージ断面図は、吸湿剤８をチップ台３１のダイボン
ディングに用いるダイボンド用材料６として用いた場合
を示している。すなわち、ダイボンド用材料６の中に吸
湿物質８１および接着剤を兼ねる粘着性材料８２が混合
されている。パッケージ内部に侵入した水分はこのダイ
ボンド用材料６の部分に吸着され、電子素子５に結露す
ることを防ぐ。またこの構成の場合には、吸湿剤８を上
蓋１等に塗布する工程が不要となる利点がある。(Third Embodiment) The schematic package cross-sectional view shown in FIG. 3 shows the case where the moisture absorbent 8 is used as the die-bonding material 6 used for die-bonding the chip base 31. That is, the hygroscopic substance 81 and the tacky material 82 which also serves as an adhesive are mixed in the die bonding material 6. Moisture that has entered the inside of the package is adsorbed by the portion of the die-bonding material 6 and prevents condensation on the electronic element 5. Further, in the case of this configuration, there is an advantage that the step of applying the hygroscopic agent 8 to the upper lid 1 and the like becomes unnecessary.
【００１５】（第四実施例）図４に示す模式的なパッケ
ージ断面図は、吸湿剤８を上蓋１と下蓋２との封止用樹
脂４に混入させて吸湿封止樹脂２１として用いた場合を
示している。この吸湿封止樹脂２１の内部に吸湿物質２
１１と粘着性物質２１２とが混入され、蓋１を封止す
る。外部からの水分はこの封止部分から侵入してくるた
め、この封止部分で水分が吸着されてパッケージ内部に
は到達しにくい。従って内部の電子素子５の寿命が長く
維持される。(Fourth Embodiment) In the schematic package sectional view shown in FIG. 4, a hygroscopic agent 8 is mixed with a sealing resin 4 for an upper lid 1 and a lower lid 2 and used as a hygroscopic sealing resin 21. The case is shown. Inside the moisture absorption sealing resin 21, the moisture absorption substance 2
11 and the adhesive substance 212 are mixed to seal the lid 1. Since moisture from the outside enters from this sealing portion, it is difficult for the moisture to be adsorbed at this sealing portion and reach the inside of the package. Therefore, the life of the internal electronic element 5 is maintained long.
【００１６】（第五実施例）図５に示す模式的なパッケ
ージ断面図は、電子素子チップ５およびリードフレーム
３のリード部分３２につながるボンディングワイヤ９等
を埋め込むように吸湿剤８を充填する構成とした場合で
ある。この場合はパッケージ内部で電子素子５が密閉状
態になるので、内部に侵入した水分が露結することがま
ったくない。また吸湿剤８の量が比較的多めになるた
め、吸湿量も多く、電子素子５の劣化をより抑制させる
ことができる。なおこの場合の吸湿剤８は硬化させる必
要はなく、柔軟な状態を保ち、電子素子５にストレスを
与えないようにする。(Fifth Embodiment) A schematic package cross-sectional view shown in FIG. 5 is a structure in which a hygroscopic agent 8 is filled so as to bury the bonding wires 9 and the like connected to the electronic element chip 5 and the lead portions 32 of the lead frame 3. That is the case. In this case, the electronic element 5 is hermetically sealed inside the package, so that moisture that has entered the package is never condensed. Further, since the amount of the moisture absorbent 8 is relatively large, the amount of moisture absorbed is large, and the deterioration of the electronic element 5 can be further suppressed. In this case, the hygroscopic agent 8 does not need to be hardened, and is kept in a flexible state so that the electronic element 5 is not stressed.
【００１７】（第六実施例）さらに、図６に示す模式的
なパッケージ断面図は、樹脂モールドもしくは樹脂性の
容器で構成されるパッケージにおいて、吸湿剤８をパッ
ケージ材料に含ませる構成とした場合である。ここで
は、リードフレーム３が下蓋２４と一体成形された場合
を示してあり、電子素子５は下蓋２４内の底にあたるチ
ップ台３１にはんだ７で固着されている。上蓋２３を封
止用樹脂４で封止後、水分が封止部分およびパッケージ
自体を通過しようとするが、パッケージ内部に侵入した
水分はパッケージ材料内に含まれる吸湿物質２３１およ
び２４１によって水分は吸着され、パッケージ内部への
侵入を抑制される。この構成もパッケージ全体が吸湿性
を有するので吸湿剤の量が比較的多く、外部の水分が多
くてパッケージ全体の吸湿能力が早く低下してしまうこ
とがない限り（例えば水がかからない限り）、長期に渡
って内部の電子素子５の劣化を抑制する。なお、内部に
中空部分がない樹脂モールドのパッケージでも効果は同
様である。(Sixth Embodiment) Further, the schematic package cross-sectional view shown in FIG. 6 shows a case where the moisture absorbent 8 is included in the package material in a package formed of a resin mold or a resin container. Is. Here, the case where the lead frame 3 is formed integrally with the lower lid 24 is shown, and the electronic element 5 is fixed to the chip base 31 which is the bottom in the lower lid 24 with the solder 7. After sealing the upper lid 23 with the sealing resin 4, moisture tries to pass through the sealing portion and the package itself, but the moisture that has entered the package is absorbed by the hygroscopic substances 231 and 241 contained in the package material. Therefore, the intrusion into the package is suppressed. Also in this configuration, since the entire package has hygroscopicity, the amount of the hygroscopic agent is relatively large, and unless the moisture absorption capacity of the entire package is deteriorated quickly due to the large amount of external moisture (for example, unless water is splashed), long-term Thus, deterioration of the electronic element 5 inside is suppressed. The same effect can be obtained with a resin-molded package having no hollow portion inside.
【００１８】（第七実施例）図７に示す模式的なパッケ
ージ断面図は、従来のカンパッケージに対して本発明を
適用した場合で、従来のカンパッケージで用いているハ
ーメチックシールの代わりに、リード３２の封止に接着
剤を用いた場合である。封止に接着剤を用いると水分の
侵入は抑えることができないが、本発明では吸収剤８を
用いているため水分を吸着することができ、電子素子５
の劣化を防止することができる。(Seventh Embodiment) A schematic package sectional view shown in FIG. 7 is a case where the present invention is applied to a conventional can package, in place of the hermetic seal used in the conventional can package. This is the case where an adhesive is used to seal the leads 32. When an adhesive is used for sealing, the invasion of water cannot be suppressed, but since the absorbent 8 is used in the present invention, the water can be adsorbed and the electronic element 5
Can be prevented from deteriorating.
【００１９】（第八実施例）図８に示す模式的なパッケ
ージ断面図は、従来のセラミックパッケージに本発明を
適用した場合である。セラミックパッケージは、もとも
と封止能力が高く、水分が侵入する可能性が少ないパッ
ケージである。通常、セラミックでできた基台１３上に
印刷配線されて取り出されたリードパターン１４が基台
内部を通じて外部に導かれている。パッケージ内部はや
はり中空部分を有する構造であるので、セラミック製の
蓋１５の内部に吸湿剤８を塗布し固着させて電子素子５
を封止する。この封止の際に内部に残された水分があっ
たとしても、吸湿剤８により水分が吸着されるので、電
子素子５に対する影響を抑制することができる。また蓋
１５の封止は低融点ガラス１４などの無機材料で行わ
れ、水分の侵入の可能性は十分低い。しかし低融点ガラ
ス４２の場合であっても、製造ばらつきによりピンホー
ル等が存在することも可能性としてあり、そのピンホー
ルから水分が侵入する可能性がある。そのような万一の
場合に備えて、内部に吸湿剤８を備えておくことで、パ
ッケージ内部は水分の結露を防ぎ、電子素子５の劣化を
抑制する。蓋１５の封止が、場合によっては封止用樹脂
４で封止されることもある。この場合にはこの封止用樹
脂４から水分の侵入が避けられず、そのため、パッケー
ジ内部の吸湿剤８で侵入した水分を吸着させる。(Eighth Embodiment) A schematic package sectional view shown in FIG. 8 is a case where the present invention is applied to a conventional ceramic package. The ceramic package is originally a package with high sealing ability and less possibility of moisture intrusion. Usually, a lead pattern 14 that is printed and taken out on a base 13 made of ceramic is taken out through the inside of the base. Since the inside of the package also has a hollow portion, the hygroscopic agent 8 is applied to and fixed inside the lid 15 made of ceramic to fix the electronic element 5 therein.
Is sealed. Even if there is water left inside during the sealing, the water is adsorbed by the hygroscopic agent 8, so that the influence on the electronic element 5 can be suppressed. Further, the lid 15 is sealed with an inorganic material such as the low-melting glass 14, and the possibility of water intrusion is sufficiently low. However, even in the case of the low-melting-point glass 42, it is possible that pinholes or the like exist due to manufacturing variations, and water may enter through the pinholes. In case of such an event, by providing the hygroscopic agent 8 inside, moisture inside the package is prevented from dew condensation, and deterioration of the electronic element 5 is suppressed. The lid 15 may be sealed with the sealing resin 4 in some cases. In this case, invasion of water from the sealing resin 4 is unavoidable, and therefore, the invading water is adsorbed by the hygroscopic agent 8 inside the package.
【００２０】（第九実施例）このほか第一実施例と第三
実施例とを併用する構成や、いずれかの実施例と他の実
施例とを組み合わせた構成であっても、もちろん本発明
の効果は相乗的に発揮される。(Ninth Embodiment) Of course, the present invention can be applied to a constitution in which the first and third embodiments are used in combination, or a constitution in which any one of the embodiments is combined with another embodiment. The effect of is exerted synergistically.
【００２１】なお、請求項でいう内部領域とは、パッケ
ージ外表面から内部の範囲であって、第六実施例の如
く、電子素子が封止されている中空領域に限らない。ま
た請求項でいう封止とは、気密封止もしくはシーリング
とも呼ばれ、電子素子をパッケージ内部に密封して外気
と遮断させることを言う。The internal region referred to in the claims means the range from the outer surface of the package to the inside, and is not limited to the hollow region in which the electronic element is sealed as in the sixth embodiment. The term "sealing" in the claims is also called airtight sealing or sealing, and means that the electronic element is sealed inside the package so as to be shielded from the outside air.
【図１】本発明の第一実施例を示す模式的なパッケージ
断面図。FIG. 1 is a schematic package cross-sectional view showing a first embodiment of the present invention.
【図２】本発明の第二実施例を示す模式的なパッケージ
断面図。FIG. 2 is a schematic package sectional view showing a second embodiment of the present invention.
【図３】本発明の第三実施例を示す模式的なパッケージ
断面図。FIG. 3 is a schematic package sectional view showing a third embodiment of the present invention.
【図４】本発明の第四実施例を示す模式的なパッケージ
断面図。FIG. 4 is a schematic package sectional view showing a fourth embodiment of the present invention.
【図５】本発明の第五実施例を示す模式的なパッケージ
断面図。FIG. 5 is a schematic package sectional view showing a fifth embodiment of the present invention.
【図６】本発明の第六実施例を示す模式的なパッケージ
断面図。FIG. 6 is a schematic package sectional view showing a sixth embodiment of the present invention.
【図７】本発明の第七実施例を示す模式的なパッケージ
断面図。FIG. 7 is a schematic package sectional view showing a seventh embodiment of the present invention.
【図８】本発明の第八実施例を示す模式的なパッケージ
断面図。FIG. 8 is a schematic package sectional view showing an eighth embodiment of the present invention.
【図９】従来のカンパッケージの模式的構成断面図。FIG. 9 is a schematic configuration cross-sectional view of a conventional can package.
【図１０】従来の模式的な金属パッケージの構成断面
図。FIG. 10 is a sectional view showing the configuration of a conventional schematic metal package.
１ 上蓋 ２ 下蓋 ３ リードフレーム ３１ チップ台（リードフレーム） ３２ リード（リードフレーム） ４ 封止用樹脂（封止用材料） ４１ ハーメチックシール ４２ 低融点ガラス ５ 電子素子 ６ ダイボンド用材料 ７ はんだ ８ 吸湿剤（吸湿手段） ８１ 吸湿物質 ８２ 樹脂（粘着性物質） ９ ボンディングワイヤ １０ ステム（基台） １１ キャップ（カンパッケージの蓋） １２ 溶接部分 １３ 基台（セラミックもしくは液晶ポリマー） １５ セラミック製の蓋 ２４ 下蓋（樹脂製） ２３ 上蓋（樹脂製） ２３１、２４１ 吸湿物質（樹脂内） 1 Upper Lid 2 Lower Lid 3 Lead Frame 31 Chip Stand (Lead Frame) 32 Lead (Lead Frame) 4 Sealing Resin (Sealing Material) 41 Hermetic Seal 42 Low Melting Glass 5 Electronic Element 6 Die Bonding Material 7 Solder 8 Moisture Absorption Agent (moisture absorbing means) 81 Moisture absorbing material 82 Resin (adhesive material) 9 Bonding wire 10 Stem (base) 11 Cap (lid of can package) 12 Welding portion 13 Base (ceramic or liquid crystal polymer) 15 Ceramic lid 24 Lower lid (made of resin) 23 Upper lid (made of resin) 231, 241 Hygroscopic substance (in resin)
Claims (5)
り出すための電子素子用パッケージにおいて、 該パッケージの内部領域に、吸湿手段が設けられている
ことを特徴とする電子素子用パッケージ。1. An electronic element package for encapsulating and protecting an electronic element to take out a necessary lead, wherein a moisture absorbing means is provided in an inner region of the package.
混合物であることを特徴とする請求項１に記載の電子素
子用パッケージ。2. The electronic element package according to claim 1, wherein the moisture absorbing means is a mixture of a moisture absorbing substance and an adhesive substance.
もしくはヤング率の小さな樹脂であることを特徴とする
請求項２に記載の電子素子用パッケージ。3. The adhesive material is a resin having a high moisture permeability,
Alternatively, the electronic element package according to claim 2, which is a resin having a small Young's modulus.
ことを特徴とする請求項２に記載の電子素子用パッケー
ジ。4. The electronic element package according to claim 2, wherein the adhesive substance is a silicone resin.
性アルミナ、吸水性ポリマーのいずれか、もしくはこれ
らのいずれかの混合物であることを特徴とする請求項２
に記載の電子素子用パッケージ。5. The hygroscopic substance is silica gel, activated carbon, activated alumina, a water-absorbing polymer, or a mixture of any of these.
The electronic device package described in.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13804294A JP3456257B2 (en) | 1994-05-27 | 1994-05-27 | Electronic device package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13804294A JP3456257B2 (en) | 1994-05-27 | 1994-05-27 | Electronic device package |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07321251A true JPH07321251A (en) | 1995-12-08 |
| JP3456257B2 JP3456257B2 (en) | 2003-10-14 |
Family
ID=15212661
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13804294A Expired - Fee Related JP3456257B2 (en) | 1994-05-27 | 1994-05-27 | Electronic device package |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3456257B2 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2008546211A (en) * | 2005-06-10 | 2008-12-18 | ゼネラル・エレクトリック・カンパニイ | Hermetic sealing package and manufacturing method thereof |
| WO2012111642A1 (en) * | 2011-02-16 | 2012-08-23 | 住友化学株式会社 | Hollow resin case for housing semiconductor chip |
| JP2016047595A (en) * | 2001-07-20 | 2016-04-07 | サエス ゲッターズ ソチエタ ペルアツィオニ | Support for microelectronic, micro-optoelectronic or micromechanical devices |
| US12062680B2 (en) | 2018-06-29 | 2024-08-13 | Sony Semiconductor Solutions Corporation | Solid-state imaging device, electronic apparatus, and method for producing solid-state imaging device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| EP3422399B1 (en) * | 2017-06-29 | 2024-07-31 | Infineon Technologies AG | Method for producing a device for protecting a semiconductor module and semiconductor module comprising said device |
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1994
- 1994-05-27 JP JP13804294A patent/JP3456257B2/en not_active Expired - Fee Related
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016047595A (en) * | 2001-07-20 | 2016-04-07 | サエス ゲッターズ ソチエタ ペルアツィオニ | Support for microelectronic, micro-optoelectronic or micromechanical devices |
| JP2008546211A (en) * | 2005-06-10 | 2008-12-18 | ゼネラル・エレクトリック・カンパニイ | Hermetic sealing package and manufacturing method thereof |
| WO2012111642A1 (en) * | 2011-02-16 | 2012-08-23 | 住友化学株式会社 | Hollow resin case for housing semiconductor chip |
| JP2012167224A (en) * | 2011-02-16 | 2012-09-06 | Sumitomo Chemical Co Ltd | Resin composition for hollow resin case, and hollow resin case |
| US12062680B2 (en) | 2018-06-29 | 2024-08-13 | Sony Semiconductor Solutions Corporation | Solid-state imaging device, electronic apparatus, and method for producing solid-state imaging device |
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| JP3456257B2 (en) | 2003-10-14 |
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