JPH07326282A - Electron source and image forming device with built-in electron source - Google Patents

Abstract

PURPOSE:To reduce leak between wirings, eliminate wiring breakage, etc., and improve yield by forming insulation film between the wirings in row/column directions of an electron source in a multi-layer film constitution of insulation film by sputtering and insulation film by glass application. CONSTITUTION:Row-direction wirings 12 are formed of conductive material on an insulation substrate 11. Next, insulation film 13 is formed by sputtering. In addition, rotation application type glass is applied for the whole surface on the film 13 by glass application as insulation film 14, and it is baked to form multi-layer insulation film. The multi-layer insulation film is then dry- etched and flattened, and the film 14 is eliminated completely. An insulation layer having reduced steps can be formed even when an aspect ratio of the row-direction wirings is increased, so in forming column-direction wirings on it, wiring breakage, etc., can be reduced to improve yield, and because pinholes in the insulation film 13 are filled with glass, leak between the wirings is reduced.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron source and an image forming apparatus such as a display device which is an application thereof, and more particularly to an electron source including a large number of surface conduction electron-emitting devices and an image of a display device which is an application thereof. Forming apparatus

[0002]

2. Description of the Related Art Conventionally, two types of electron emitters, a thermoelectron source and a cold cathode electron source, are known. The cold cathode electron source includes a field emission type (hereinafter abbreviated as FE type), a metal / insulating layer / metal type (hereinafter abbreviated as MIM), a surface conduction type electron emitting device, and the like. As an example of the FE type, W. P. Dyke & W. W.
Dolan, "Field Emission", Ad
vacuum in Electron Physic
s, 8, 89 (1956) or C.I. A. Spind
t, “PHYSICSL Properties of
thin-film field emission
cathodeswith mollybdenium
cones ", J. Appl. Phys., 47, 52.
48 (1976) and the like are known.

An example of the MIM type is C.I. A. Mead,
"The tunnel-emission ampl
ifier, J.M. Appl. Phys. , 32, 646
(1961) and the like are known.

As an example of the surface conduction electron-emitting device,
M. I. Elinson, Radio Eng. Elec
tron Phys. , 10, (1965) and so on.

The surface conduction electron-emitting device utilizes a phenomenon that electron emission occurs when a current is passed through a thin film of a small area formed on a substrate in parallel with the film surface. As the surface conduction electron-emitting device, one using the SnO ₂ thin film by Erinson et al., One using the Au thin film [G. Dittmer: "The Solid Fil"
ms ", 9,317 (1972)] , In 2 0 3 / SnO
₂ Thin film [M. Hartwell and
C. G. Fonstad: “IEEE Trans.E
D Conf. , 519 (1975)], by a carbon thin film [Haraki Araki et al .: Vacuum, Vol. 26, No. 1,
22 (1983)] and the like are reported.

As a typical device configuration of these surface conduction electron-emitting devices, the above-mentioned M. The Hartwell device structure is shown in FIG. In the figure, 112 is an insulating substrate. Reference numeral 21 denotes an electron emitting portion forming thin film, which is formed of a metal oxide thin film or the like formed by sputtering on an H-shaped pattern, and the electron emitting portion 111 is formed by an energization process called forming described later. Reference numeral 21 is a thin film including an electron emitting portion.

Conventionally, in these surface conduction electron-emitting devices, the electron-emitting portion forming thin film 2 is formed before electron emission.
It was general that the electron emission portion 111 was formed by subjecting 1 to an energization process called forming in advance. That is, forming means that a voltage is applied to both ends of the electron-emitting-portion forming thin film 21 to locally destroy, deform or alter the electron-emitting-portion forming thin film so that the electron emission is in a high resistance state. To form the part 111. The electron emitting portion 111 is the thin film 21 for forming the electron emitting portion.
A crack is generated in a part of the area and electrons are emitted from the vicinity of the crack. Hereinafter, the electron emission part forming thin film 21 including the electron emission part formed by forming is referred to as a thin film including the electron emission part. In the surface-conduction type electron-emitting device that has been subjected to the forming process, a voltage is applied to the thin film 21 including the above-mentioned electron-emitting portion, and a current is caused to flow through the electrons, so that the above-mentioned electron-emitting portion 11 is formed.
The electron is emitted from 1. However,
In these conventional surface conduction electron-emitting devices, there were various problems in practical use, but the applicants of the present invention diligently studied various improvements as described below, and found various problems in practical use. I have solved the point.

The above-mentioned surface conduction electron-emitting device has an advantage that a large number of devices can be arrayed over a large area because it has a simple structure and is easy to manufacture. Therefore, various applications that can make full use of this feature are being studied. Examples thereof include a charged beam source and a display device. An example of arranging a large number of surface conduction electron-emitting devices is an electron source in which surface conduction electron-emitting devices are arranged in parallel and a large number of rows in which both ends of each device are connected by wiring are arranged. (For example, Japanese Patent Application Laid-Open No. 1-03133 of the present applicant.
2) Further, particularly in an image forming apparatus such as a display device,
In recent years, flat panel display devices using liquid crystal have become popular in place of CRTs, but since they are not self-luminous, they have problems such as having a backlight, etc. Development has been desired. An image forming apparatus, which is a display apparatus in which a large number of surface conduction electron-emitting devices are arranged and a phosphor that emits visible light by the electrons emitted from the electron sources, is relatively easy to use in an image forming apparatus. It is a self-luminous display device that can be manufactured and has excellent display quality. (For example, applicant's USP 50668
83)

[0009]

In the electron source structure in which a large number of plane type or vertical type surface conduction electron-emitting devices are arranged in a matrix on a substrate, a large screen and high definition are required. The width of the wiring needs to be narrowed and the thickness thereof needs to be increased as the wiring progresses. This causes a large step difference in the interlayer insulating film, resulting in poor coverage at the stepped portion and the above-mentioned problems such as wire breakage. The present invention reduces the leakage between wirings due to pinholes in the interlayer insulating film, improves the yield by eliminating disconnection of the upper wiring due to poor coverage at the step portion of the interlayer insulating film, and improves the yield of wiring and interlayer insulation. The purpose is to improve the reliability of the film.

[0010]

In order to achieve the above object, the present invention provides at least a pair of device electrodes and electron-emitting portions in row-direction wirings and column-direction wirings formed on an insulating substrate via an interlayer insulating film. In the electron source in which a large number of surface conduction electron-emitting devices are arranged in a matrix by connecting the device electrodes of the surface conduction electron-emitting device composed of a thin film containing And an electron source characterized in that it is formed by a multilayer film of at least two layers in which coating type insulating films formed by a glass coating method are stacked. After the interlayer insulating film is formed, it is dry-etched. The interlayer insulating film is a film formed by planarizing and forming, and after forming an insulating film by a sputtering method, a coating type insulating film is formed by a glass coating method and then flattened by dry etching. When the interlayer insulating film, after coating type insulating film formed by the glass coating method, to form an insulating film by a sputtering method, which is intended to include that the film flattened formed by dry etching.

The present invention is also an image forming apparatus incorporating the above electron source.

[0012]

According to the present invention, a large number of plane type or
About the interlayer insulating film between the row-direction wiring and the column-direction wiring in the electron source configuration in which the vertical surface conduction electron-emitting devices are arranged,
The present invention is characterized in that an insulating film formed by a sputtering method and a coating type insulating film formed by a glass coating method are formed so as to be overlapped with each other by at least two layers or more, and are planarized by dry etching.

As the insulating film thus formed, for example, an insulating film is formed on the row-direction wiring by a sputtering method,
On top of that, a coating type insulating film is formed by the glass coating method,
A dry-etched flattened insulating film or a coating type insulating film is formed on the row wiring by a glass coating method,
An insulating film is formed by forming an insulating film on this by a sputtering method and flattening it by dry etching.

The former can reduce short-circuit defects due to the pinballs by filling the pinballs with the coating type insulating film, while the latter forms the coating type insulating film first, so that it is more effective than the former. Planarization is performed.

The order of the processes for forming the sputtered film and the coated insulating film can be selected according to the purpose.

As a result, even if the aspect ratio of the row-direction wiring increases with the increase in screen size, it is possible to form an insulating layer having a small level difference by the glass coating method, and when forming the row-direction wiring on the insulating layer. The disconnection and the like are reduced, the yield is increased, and the pinhole in the insulating film is filled by the glass coating method, so that the leak between the wirings is reduced.

(Embodiment) In the present invention, an insulating film is formed by forming a multilayer insulating film by a sputtering method and a glass coating method.

The insulating film formed by the sputtering method is SiO 2.
₂ , Si ₃ N ₄ , Al ₂ O ₃ , AlN and the like.

The thickness of these is preferably 0.3 to 5.0 μm. The sputtering method is performed by a known method.

The glass coating method is preferably spin coating or the like. The thickness of these is preferably 0.3 to 5.0 μm.

In the present invention, it is preferable to further dry-etch the above-mentioned multilayer insulating film to flatten it.

Dry etching uses CF ₄ + H ₂ , CF
₄ + C ₂ H ₄ , CHF ₃ , C ₂ F ₆ , C ₃ F ₈ , C ₄ F
₁₀ etc. are preferable.

As the substrate, soda quartz glass, lead glass, borosilicate glass, quartz glass pyroceram and the like are preferable.

FIG. 1 shows a process chart of one embodiment.

The step (a) shows a step of forming the row wiring 12 on the insulating substrate 11 with a conductive material.

A conductive material can be generally used as the wiring material, but Cr, Au, Ti, Cu or the like is preferable. As a method for forming the wiring, a vacuum vapor deposition method, a printing method, or a sputtering method can be used.

The step (b) shows a state in which the first insulating film 13 is formed by the sputtering method.

In the step (c), the second insulating film 14 is further pressed onto the first insulating film 13, spin coating glass (SOG: Spin On Glass) is applied over the entire surface by a glass coating method, and then baked. A multi-layer insulation film is formed.

In the step (d), the multilayer insulating film is flattened by dry etching.

In the step (e), dry etching is further performed. In this case, the second insulating film 14 is completely removed and planarized.

Since the interlayer insulating film thus formed is flattened, no disconnection of the column-direction wiring on the interlayer insulating film can be seen. In addition, there are almost no short-circuit defects due to pinholes, and the breakdown voltage is 20
When V is applied, the leakage current is good at minus 12th power.

[0032]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS In the respective drawings, the items having the same numbers indicate the same items.

[Embodiment 1] This embodiment is one of the image forming apparatuses having an electron source structure in which a large number of surface conduction elements are arranged.

FIG. 2 shows a plan view of a part of the electron source. 3 is a sectional view taken along the line AA 'and BB' in the figure. Here, 11 is a substrate, 12 is row-direction wiring corresponding to Dxn, 22
Is a column direction wiring corresponding to Dyn. Reference numeral 21 is a thin film including an electron emitting portion, 31 and 32 are device electrodes, 13 is an interlayer insulating film formed by the present invention, and 25 is a contact hole for electrically connecting the device electrode 31 and the row wiring 12.

Next, the manufacturing method will be concretely described in the order of steps with reference to FIGS. Step (a) After sequentially depositing 50 Å Cr and 6000 Å Au by vacuum deposition on a substrate 11 in which a 0.5 μm-thick silicon oxide film is formed on a cleaned blue plate glass by a sputtering method, A photoresist (AZ1370 Hoechst) is spin-coated with a spinner and baked, and then a photomask image is exposed and developed to form row-direction wiring (lower wiring) 12.
The resist pattern was formed, and the Au / Cr deposited film was wet-etched to form the lower wiring 12 having a desired shape. Step (b) An insulating layer made of a silicon oxide film having a thickness of 1.0 μm was formed by a sputtering method, and an insulating film was formed thereon by a glass coating method. SOG: Tokyo Ohka Kogyo Co., Ltd. OCD T
-2 Si100000 is spin coated with a spinner,
(4000 rotations 15 seconds), and baked at 500 ° C. for 30 minutes. The total film thickness of these two layers was 1.2 μm. This insulating film was flattened by etching back to a film thickness of 1.0 μm by a dry etching method (CF ₄ + H ₂ gas).

Thus, the interlayer insulating film 33 was formed. Step (c) A photoresist pattern for forming a contact hole was formed in the interlayer insulating film 33 deposited in the step b, and the interlayer insulating layer 33 was etched using this as a mask to form the contact hole 25. The etching is performed by RIE (Reactive Ion Etch) using CF ₄ and H ₂ gas.
ing) method. Step (d) After that, a pattern to be the device electrode 31 and the device electrode gap 11 is formed with a photoresist (RD-2000N-41).
Formed by Hitachi Chemical Co., Ltd.) and vacuum deposited to a thickness of 50Å
And Ti having a thickness of 1000 Å were sequentially laminated. The photoresist pattern was dissolved in an organic solvent, the Ni / Ti deposition film was lifted off, and the device electrodes 31 and 32 were formed with the device electrode interval L1 of 3 μm and the device electrode width W1 of 300 μm. Step (e) After forming a photoresist pattern of the column direction wiring (upper wiring) 22 on the device electrodes 31 and 32, a T having a thickness of 50Å is formed.
i and Au having a thickness of 5000 Å were sequentially deposited by a vacuum evaporation method, and unnecessary portions were removed by lift-off to form the upper wiring 22 having a desired shape. Step (f) A Cr film 51 having a film thickness of 1000 Å is deposited and patterned by vacuum evaporation using an inter-element electrode gap L1 and a mask having an opening in the vicinity thereof, and organic Pd (cc
p4230 manufactured by Okuno Chemical Industries Co., Ltd. was spin-coated with a spinner and heated and baked at 300 ° C. for 10 minutes. The thin film 24 formed of fine particles of Pd as the main element thus formed had a film thickness of 100Å and a sheet resistance value of 5 × 10 ⁴ Ω / port. Note that the fine particle film described here is a film in which a plurality of fine particles are aggregated as described above, and as a fine structure thereof, not only the fine particles are individually dispersed and arranged, but also the fine particles are adjacent to each other or overlap each other. The state of the film (including an island shape) refers to the diameter of the fine particles whose particle shape is recognizable in the above state. Step (g) The Cr film 51 and the baked thin film 21 were etched by an acid etchant to form an electron emission portion forming thin film 24a having a desired pattern. Step (h) A pattern was formed such that a resist was applied to portions other than the contact hole 25, and Ti with a thickness of 50Å and Au with a thickness of 5000Å were sequentially deposited by vacuum evaporation. The contact hole 25 was buried and the connection portion 23 was formed by removing unnecessary portions by lift-off.

Through the above steps, the lower wiring 12, the interlayer insulating film 33, the upper wiring 22, the element electrodes 31,
32, the electron emission portion forming thin film 24a and the like are formed.

Next, an example in which a display device is configured by using the electron source created as described above will be described with reference to FIGS. 6 and 7.

After fixing the substrate 11 on which a large number of flat surface-conduction type electron-emitting devices are formed on the rear plate 61 as described above, a face plate 66 (a fluorescent film on the inner surface of the glass substrate 63) is placed 5 mm above the substrate 11. 64 and a metal back 65 are formed) are arranged via the support frame 62. Frit glass is applied to the joint portion of the face plate 66, the support frame 62, and the rear plate 61, and the frit glass is applied at 400 ° C to 500 ° C in the air or nitrogen atmosphere for 10
It was sealed by baking for more than a minute. (FIG. 6) The substrate 11 is also fixed to the rear plate 61 with frit glass.

In FIG. 6, reference numerals 12 and 13 denote wirings in the X and Y directions, respectively.

In the case of monochrome, the fluorescent film 64 is composed of only the fluorescent material. In this embodiment, the fluorescent material has a stripe shape, a black stripe is first formed, and the fluorescent material of each color is applied to the gap. The fluorescent film 64 was prepared. A slurry method was used as a method of applying the phosphor to the glass substrate 63 on which the black stripe is formed by using a material whose main component is graphite which is often used as the material of the black stripe.

FIG. 7 is a diagram showing a specific example of manufacturing the fluorescent film 64. In the case of monochrome, the fluorescent film 64 is composed of only the phosphor, but in the case of a color fluorescent film, it is composed of a black conductor 71 and a phosphor 72 called a black stripe or a black matrix depending on the arrangement of the phosphors. . The purpose of providing the black stripes and the black matrix is to make the color mixture or the like inconspicuous by blackening the separately applied portions between the phosphors 72 of the three primary color phosphors, which are necessary in the case of color display, and in the phosphor film 64. This is to suppress a decrease in contrast due to reflection of external light. The material of the black stripe is not limited to the commonly used material containing graphite as a main component, but is not limited to this as long as it is a material having conductivity and little light transmission and reflection.

A metal back 65 is usually provided on the inner surface side of the fluorescent film 64. The metal back was prepared by performing a smoothing process (usually called filming) on the inner surface of the fluorescent film after the fluorescent film was produced, and then vacuum-depositing Al.

The face plate 66 is further provided with a fluorescent film 6
In order to enhance the conductivity of No. 4, a transparent electrode (not shown) may be provided on the outer surface side of the fluorescent film 64, but in this embodiment, it is omitted because sufficient conductivity is obtained only by the metal back. did.

In the case of the above-mentioned sealing, in the case of color, the phosphors of the respective colors and the electron-emitting devices must correspond to each other.

The atmosphere in the glass container completed as described above is exhausted by a vacuum pump through an exhaust pipe (not shown), and after reaching a sufficient degree of vacuum, the external terminals Dx1 to Dxm and Dy1 to Dyn. A voltage is applied between the electrodes 31 and 32 of the electron-emitting device forming thin film 24a (FIG. 5) to connect the electron-emitting region 111 to the electron-emitting region forming thin film 24a.
It was created by subjecting a to an energization process (forming process). FIG. 8 shows the voltage waveform of the forming process.

In FIG. 8, T1 and T2 are the pulse width and pulse interval of the voltage waveform. In this embodiment, T1 is 1 millisecond,
T2 is 10 milliseconds, the peak value of the triangular wave (peak voltage during forming) is 5V, and the forming process is about 1
It was performed for 60 seconds in a vacuum atmosphere of × 10 ^-6 torr.

The electron-emitting portion 111 thus created
Was in a state in which fine particles containing palladium element as a main component were dispersed and arranged, and the average particle size of the fine particles was 30Å.

Forming was carried out to form an electron emitting portion 111 and an electron emitting device was prepared.

Next, at a vacuum degree of about 10 ^-6 torr, an exhaust pipe (not shown) was heated by a gas burner to be welded to seal the envelope.

Finally, in order to maintain the degree of vacuum after sealing,
Getter processing was performed. In this, a getter arranged at a predetermined position (not shown) in the image forming apparatus was heated by a heating method such as high-frequency heating on a straight line for sealing to form a vapor deposition film. The getter was mainly composed of Ba or the like.

In the image display device of the present invention completed as described above, each electron-emitting device has a container Dx.
Electrons are emitted by applying a scanning signal and a modulation signal from a signal generating means (not shown) through 1 to Dxm and Dy1 to Dyn, and a high voltage of 1 kV to 10 kV is applied to the metal back 65 through the high voltage terminal Hv. An image was displayed by accelerating the electron beam, causing it to collide with the fluorescent film 64, and exciting and emitting light.

[Embodiment 2] In this embodiment, a large number of plane type surface conduction electron-emitting devices are formed on a substrate, and an interlayer insulating layer between row-direction wirings and column-direction wirings is formed of the row- and column-direction wirings. This is a case where it exists only at the intersecting portion, and the connection between the device electrodes and the row-direction wirings and the column-direction wirings is connected and electrically connected without passing through the contact holes, and is directly arranged on the insulating substrate.
A plan view of a part of the electron source is shown in FIG. Further, FIG. 10 shows a cross-sectional view taken along the line AA ′ in FIG. 9. However, the same symbols as those in FIGS. 2 and 3 indicate the same components. Here, 11 is a substrate, 12 is row-direction wiring corresponding to Dxn in FIG.
2 is a column-directional wiring corresponding to Dyn in FIG. 2, 21 is a thin film containing an electron source, and 33 is an interlayer insulating layer.

Next, the manufacturing method will be concretely described in the order of steps with reference to FIG. Step-a After laminating Cr having a thickness of 50 Å and Au having a thickness of 1000 Å by vacuum deposition on the substrate 11 made of cleaned soda lime glass, a photoresist (made by AZ1370 Hoechst).
Is spin coated with a spinner and baked, and then a photomask image is exposed and developed to connect the device electrodes 31 and 32 to the connection 7
5 (see FIG. 12), a resist pattern for the X-direction wiring 12 is formed, and the Au / Cr film is etched to form the X-direction wiring 12 and the device electrodes 31, 32 (W = 300 μm) having a desired shape.
m, L1 = 2 μ) and the connection 75 were simultaneously formed. Step-b An insulating film was formed on this by a glass coating method. SO
G: Tokyo Ohka Kogyo Co., Ltd. OCD T-2 Si-59
000 is spin coated with a spinner (2000 rpm 15
Second) and baked at 500 ° C. for 30 minutes. The total film thickness of these two layers was 1.1 μm. Thickness 1 an insulating film made of the two layers by dry etching (CF ₄ + H ₂ gas).
Etching back was performed to 0 μm to flatten the surface. Step-c X-direction wiring 12 and Y are formed on the silicon oxide film deposited in Step b.
A photoresist pattern for forming an interlayer insulating film having a desired shape provided only at the intersections of the direction wirings 22 was formed, and the interlayer insulating film was etched using this as a mask to form the interlayer insulating film 33. The etching is performed by RIE (Reactive Ion Etchi) using CF ₄ and H ₂ gas.
ng) method. Step-d After that, a photoresist (RD-2000N-41 manufactured by Hitachi Chemical Co., Ltd.) was formed into a pattern to be the Y-direction wiring 22, and 5000 Å-thick Au was deposited by a vacuum vapor deposition method. The photoresist pattern was dissolved in an organic solvent, the Au deposited film was lifted off, and an X-direction wiring was formed. Step-e In the same manner as in Example 1, a Cr film having a film thickness of 1000 Å is deposited by vacuum vapor deposition in the shape of the thin film 21 including the inter-element electrodes 31 and 32 and the openings in the vicinity thereof and including the electron emitting portion.
After patterning, organic Pd (ccp4230
Okuno Pharmaceutical Co., Ltd.) spin coated by spinner,
It was heated and baked at 300 ° C. for 10 minutes. The thin film 24 formed of fine particles of Pd as the main element thus formed has a film thickness of 75Å and a sheet resistance value of 1 × 10 ^5.
Ω / mouth.

Then, the Cr film and the baked thin film 24 were wet-etched with an acid etchant to form an electron-emitting portion forming thin film 24a having a desired pattern.

Through the above steps, the X-direction wiring 12, the interlayer insulating film 33, the Y-direction wiring 22, the device electrodes 31, 32, the electron emitting portion forming thin film 24a, etc. were formed on the insulating substrate 11.

[0057]

As described above, according to the present invention, between the row-direction wiring and the column-direction wiring in the electron source structure in which a large number of plane type or vertical type surface conduction electron-emitting devices are arranged in a matrix. Regarding the interlayer insulating film, it is possible to form an insulating layer having a small step even when the aspect ratio of the row-direction wiring is large, and when forming the column-direction wiring on the insulation layer, disconnection and the like are reduced, and the SOG is improved. As a result, the pinhole in the insulating film is filled, and the leak between wirings is reduced.

[Brief description of drawings]

FIG. 1 is a process chart showing an example of a method for forming an interlayer insulating film according to the present invention.

FIG. 2 is a partial plan view showing an embodiment of an electron source.

3 is an enlarged cross-sectional view taken along lines AA ′ and BB ′ of FIG.

FIG. 4 is a first-half process drawing showing an example of a method for manufacturing an electron source of the present invention.

FIG. 5 is a second half process chart showing an example of the method for manufacturing the electron source of the present invention.

FIG. 6 is a partially cutaway perspective view showing an example of the image forming apparatus of the present invention.

FIG. 7 is an explanatory diagram showing an example of a fluorescent film used in the image forming apparatus of the present invention.

FIG. 8 is a voltage waveform diagram of an energization process in manufacturing the electron source of the present invention.

FIG. 9 is a partial plan view showing another embodiment of the electron source.

10 is a partial cross-sectional view taken along the line AA ′ in FIG.

11A and 11B show an example of a basic configuration of a surface conduction electron-emitting device used in the present invention, FIG. 11A is a plan view and FIG. 11B is a side view.

FIG. 12 is a process drawing showing another electron source manufacturing method of the present invention.

[Explanation of symbols]

 11 Insulating Substrate 12 Row Direction Wiring (Lower Wiring, X Direction Wiring) 13 Insulating Film by Sputtering Method 14 Insulating Film by Glass Coating Method 21 Thin Film Including Electron Emitting Area 22 Column Direction Wiring (Upper Wiring, Y Direction Wiring) 23 Connection Part 24 Thin film 24a Electron emission part forming thin film 25 Contact hole 31, 32 Element electrode 33 Interlayer insulating film 51 Cr film 61 Rear plate 62 Support frame 63 Glass substrate 64 Fluorescent film 65 Metal back 66 Face plate 68 Envelope 71 Black conductive Material 72 Fluorescent frame 111 Electron emission part 112 Insulating substrate

Claims (5)

[Claims] 1. A surface conduction electron-emitting device comprising row-direction wirings and column-direction wirings formed on an insulating substrate with an interlayer insulating film interposed between at least one pair of device electrodes and a thin film including an electron-emitting portion. In the electron source in which a large number of surface conduction electron-emitting devices are arranged in a matrix by connecting the device electrodes of, at least the insulating film includes an insulating film formed by a sputtering method and a coated insulating film formed by a glass coating method. An electron source characterized by being formed of a multilayer film of two or more layers. 2. The electron source according to claim 1, wherein the interlayer insulating film is formed and then planarized by dry etching. 3. The electron source according to claim 1, wherein the interlayer insulating film is a film formed by forming a coating type insulating film by a glass coating method after planarizing the insulating film by a sputtering method and flattening the same by dry etching. . 4. The electron source according to claim 1, wherein the interlayer insulating film is a film formed by forming a coating type insulating film by a glass coating method, then forming an insulating film by a sputtering method, and flattening the insulating film by dry etching. . 5. An image forming apparatus incorporating the electron source according to claim 1.