JPH07288252A - Cvd device - Google Patents

Abstract

PURPOSE:To manufacture a CVD film having the excellent characteristics by arranging a desorption device for removing water content in a film in the CVD device having a film forming chamber, and desorbing the water content in the film at a high speed. CONSTITUTION:A magnetron 3 is provided in a desorption device 1 for desorbing water content in a film. A wafer mounting stage 5 is provided to face the magnetron 3. A wafer 7 is mounted on the upper surface of the wafer mounting stage 5, and a heater 9 is provided. Furthermore, the desorption device 1 for the water content in the film is arranged in the chamber having the tightly sealed structure. An exhaust pump 11 is arranged in this chamber. The pressure in the chamber is reduced with the exhaust pump 11, and the wafer is heated with the heater 9. Thus, the water content in the film is desorbed at a high speed, and the CVD film having the excellent characteristics can be manufactured.

Description

Detailed Description of the Invention

[0001]

FIELD OF THE INVENTION The present invention relates to a gas phase reactor.
More specifically, the present invention has a mechanism of removing C in the membrane.
It relates to a VD device.

[0002]

2. Description of the Related Art In the manufacture of semiconductor ICs, there is a step of forming a thin film of silicon oxide on the surface of a wafer. Chemical vapor deposition (CVD) is used as a method of forming a thin film. There are three CVD methods, an atmospheric method, a decompression method and a plasma method, but the plasma method is attracting attention as a suitable method for a recent ultra LSI that requires a high quality and highly accurate thin film. .

In the plasma method, a high-frequency voltage is applied to a reaction gas injected in a vacuum to form a plasma, and energy required for the reaction is obtained. Therefore, a uniform film thickness and a good film quality can be obtained. Moreover, it is excellent in many respects such as a high film formation speed.

For example, SiH ₄ or the like has been used as a material for forming a silicon oxide film by the plasma method, but with the miniaturization of semiconductor devices, reduction in step coverage has become a problem. Instead of this monosilane gas,
Recently, liquid tetraethyl orthosilicate (TEO
S) [Si (OC ₂ H ₅ ) ₄ ] has come into use. This is because TEOS can form a dense film having excellent step coverage. When a silicon oxide film is formed using TEOS, TEOS is heated and vaporized,
TEOS gas is used, which is mixed with oxygen gas and supplied to the reaction furnace.

TEOS can also be suitably used in an atmospheric pressure CVD apparatus. In this case, TEOS and ozone gas (O ₃ )
Is fed into the reaction furnace.

However, the film-forming method using TEOS such as plasma TEOS or O ₃ -TEOS at normal pressure as a material contains water in a film-formed state in the reaction furnace, and the film itself has a hygroscopic property. As unstable. The moisture taken in the film is not preferable because it deteriorates the characteristics of the device and causes various undesired phenomena in the subsequent sputtering process.

[0007]

SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a CVD apparatus capable of desorbing water in a film at a high speed and producing a CVD film having excellent characteristics.

[0008]

Means for Solving the Problems The above-mentioned problems can be solved in a CVD apparatus having at least one film-forming treatment reactor.
This can be solved by providing a device for desorption of water in the film.

[0009]

As described above, since the CVD apparatus of the present invention has the desorption processing apparatus for moisture in the film, the moisture removal processing can be performed at an appropriate stage of the film formation processing. As a result, not only a film having excellent characteristics can be obtained, but also the subsequent sputtering step can be smoothly performed.

[0010]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in more detail below with reference to the drawings.

FIG. 1 is a schematic block diagram of an example of a desorption treatment apparatus for moisture in a film in a CVD apparatus of the present invention. The desorption treatment device 1 for moisture in the film has a magnetron 3 as a source of electromagnetic waves. Electromagnetic waves are used for desorption of water, and the water in the film is desorbed by vibrating and heating. As a result, the water content in the film can be desorbed very efficiently. A wafer mounting table 5 is provided facing the magnetron 3. The wafer 7 is mounted on the upper surface of the wafer mounting table 5. A heater 9 may be provided on the wafer mounting table 5 if desired. Furthermore,
As shown in FIG. 1, the in-membrane water desorption treatment device 1 may be arranged in a chamber having a closed structure, and the exhaust pump 11 may be arranged in this chamber. Desorption of water can be sufficiently performed in the atmosphere. Therefore, the in-membrane water desorption treatment device 1 can be arranged in an atmospheric pressure atmosphere. However, in order to prevent the film from absorbing moisture in the atmosphere again after the moisture desorption process and to more efficiently desorb the moisture in the film, the device 1 for desorption of moisture in the film is a hermetically sealed room. It is preferable that the inside of the chamber is depressurized by the vacuum pump 11 and the wafer is further heated by the heater 9. The depressurized state need not be a high vacuum, but a sub-vacuum level is sufficient.

The heating temperature of the wafer 7 by the heater 9 is not particularly limited. Generally, the temperature may be such that it does not adversely affect the wafer and promotes desorption of moisture in the film. As a general index, such a temperature is preferably in the range of 250 ° C to 450 ° C. Similarly, magnetron 3
The electromagnetic wave irradiation time by is not particularly limited. It may be a time necessary and sufficient for desorption of water in the film. Further, the electromagnetic wave irradiation time changes according to the output of the magnetron 3. As a general index, in the case of a magnetron with an output of 1 kW,
The electromagnetic wave irradiation time required for desorption of water in the film is in the range of about 600 seconds to 800 seconds. Needless to say, the higher the output of the magnetron, the shorter the electromagnetic wave irradiation time.

FIG. 2 is a schematic diagram of an example of a CVD apparatus having the apparatus 1 for desorption of moisture in the film as shown in FIG. The illustrated CVD apparatus includes a chamber (reactor) 1
It is a multi-chamber type CVD apparatus having 3 units. The chambers 13 are connected to each other through a vacuum transfer chamber 15 so that the wafers can be processed cooperatively or continuously between the chambers 13. Although not shown, a suitable wafer handling mechanism known to those skilled in the art is provided inside the vacuum transfer chamber 15. Needless to say, a gate that can be opened and closed is provided between each chamber 13 and the vacuum transfer chamber 15. A buffer (preliminary chamber) 17 is provided on the remaining side of the vacuum transfer chamber 15. The wafer is supplied from the wafer cartridge 19 via the buffer (preliminary chamber) 17, and the wafer is stored in the wafer cartridge 21. To do. The supply wafer cartridge 19 and the storage wafer cartridge 21 are placed in a known wafer cartridge placement chamber 23 having an elevator or the like. The wafer cartridge placement chamber 23 is open to the atmospheric pressure atmosphere. In order not to break the degree of vacuum of the vacuum transfer chamber 15, it is preferable that the buffer (preliminary chamber) 17 has gates on both the atmosphere side (that is, the wafer cartridge side) and the vacuum transfer chamber side. Buffer (spare room) 17
An appropriate wafer transfer mechanism can be provided inside the wafer.

The apparatus for desorbing moisture in the film 1 can be provided in any one of the multi-chambers 13, or each chamber 13 can be loaded / loaded with a wafer.
It may be provided inside the vacuum transfer chamber 15 provided with a wafer handling mechanism for unloading, or in a buffer (preliminary chamber) 17 before the wafer is loaded into the vacuum transfer chamber 15. Or
It can also be provided in the wafer cartridge placement chamber 23.

However, it is preferable that the desorption treatment of moisture in the film is performed after the film is formed or before laminating different kinds of films.
Therefore, from the viewpoint of processing efficiency, the apparatus 1 for desorbing moisture in the membrane is provided in any one of the multi-chambers.
3 or a vacuum transfer chamber 15 provided with a wafer handling mechanism for loading / unloading a wafer to / from each chamber 13.

The CVD apparatus of the present invention is not limited to the multi-chamber type shown in the drawing, but may be a single chamber type. in this case,
It is preferable that the apparatus 1 for dehydrating moisture in the film is provided in the vacuum transfer chamber 15.

[0017]

As described above, since the CVD apparatus of the present invention has the desorption treatment device for moisture in the film, it is possible to perform the moisture removal process at an appropriate stage of the film forming process. As a result, not only a film having excellent characteristics can be obtained, but also the subsequent sputtering step can be smoothly performed.

[Brief description of drawings]

FIG. 1 is a schematic configuration diagram of an example of an apparatus for desorbing moisture in a film that can be used in a CVD apparatus of the present invention.

FIG. 2 is a schematic configuration diagram of an example of a CVD apparatus having the apparatus for desorbing moisture in the film of FIG.

[Explanation of symbols]

 1 Device for Desorption of Water in Film 3 Magnetron 5 Wafer Placement Table 7 Wafer 9 Heater 11 Vacuum Pump 13 Chamber 15 Vacuum Transfer Chamber 17 Buffer (Spare Room) 19 Supply Side Wafer Cartridge 21 Storage Side Wafer Cartridge 23 Wafer Cartridge Arrangement Room

Claims (6)

[Claims] 1. A CVD apparatus having at least one chamber for film formation processing, comprising a desorption processing apparatus for desorption of moisture in the film. 2. The desorption treatment apparatus for moisture in a film has a magnetron for irradiating a wafer on a wafer mounting table with electromagnetic waves, the magnetron and the wafer mounting table are arranged in a hermetically sealed chamber, and the wafer mounting table is a wafer. The CVD apparatus according to claim 1, further comprising a heater for heating, and a vacuum pump is connected to the chamber. 3. A plurality of chambers, each chamber are connected by a common vacuum transfer chamber, and the apparatus for desorbing moisture in a film is arranged in one of the plurality of chambers. Or the CVD apparatus according to claim 1, which is arranged in a vacuum transfer chamber. 4. The CVD apparatus according to claim 1, wherein the CVD apparatus has a single chamber, a vacuum transfer chamber is connected to the chamber, and the apparatus for desorbing moisture in a film is arranged in the vacuum transfer chamber. 5. The CVD according to claim 1, which is an atmospheric pressure CVD apparatus.
apparatus. 6. The C according to claim 1, which is a plasma CVD apparatus.
VD device.