JPH0722352A - Aligner and manufacture of device by use of same - Google Patents

Abstract

PURPOSE:To obtain an excellent transfer accuracy by a method wherein an exposing device has a reticle stage for scanning and moving a reticle and a wafer stage for scanning and moving a wafer and the inclination of a reference reflecting mirror provided on the wafer stage is detected to correct the scanning and moving direction of the reticle stage. CONSTITUTION:A reticle stage 2 is constituted of a driving means for scanning and moving a reticle 11, a measuring means for measuring the position and attitude of the reticle 11 and the like. On the other hand, a reference reflecting mirror 611, which is used at the time of a measurement of the position of a wafer stage using an interferometer, is provided on the wafer stage for scanning and moving a wafer 51 within a projection surface. The inclination of this mirror 611 is detected to detect the scanning and moving direction of the stage 2 and the scanning and moving direction is corrected on the basis of the detected result. Thereby, an excellent transfer accuracy can be obtained.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure device for exposing and transferring a pattern drawn on an original plate onto a substrate.

[0002]

2. Description of the Related Art As an exposure apparatus for manufacturing a minute device such as a semiconductor integrated circuit, a pattern drawn on a reticle is transferred onto a wafer by projecting a part of the pattern on the reticle. , A reticle and a wafer are synchronously scanned to expose and transfer the entire pattern area onto the wafer.

For example, in an exposure manufacturing apparatus for a liquid crystal display plate disclosed in Japanese Patent Laid-Open No. 61-251025, a mask stage on which a photomask pattern is projected onto a glass substrate by a mirror projection optical system and the photomask is placed. And the substrate stage on which the glass substrate is mounted are moved in synchronization with each other to perform scanning exposure.

An example of this is shown in FIG. In the figure, 9
Reference numeral 0 denotes an illumination optical system, which illuminates the mask 91 with light from a light source. A mirror optical system 96 projects the pattern image of the mask 91 onto the substrate 97 at the same size. Reference numerals 92 and 99 are mask stages and substrate stages, 93 and 98 are motors for driving the respective stages 92 and 99, and 94 and 95 are length measuring devices such as laser interferometers for monitoring the positions of the respective stages 92 and 99. It is a vessel. Each stage 9
Nos. 2 and 99 are designed so that no displacement occurs in the direction orthogonal to the scanning direction due to the accuracy of the guide. An air bearing with good straightness is used as this guide.

[0005]

Generally, a semiconductor device is manufactured by superposing a plurality of patterns on the same wafer. In the scanning exposure method, the exposure of the second layer and subsequent layers can be locally aligned in the pattern based on the alignment mark formed in the previous layer, but the exposure accuracy of the first layer is high. This greatly affects the position of the transferred image and causes image distortion.

One of the factors of image distortion is the influence of straightness of scanning movement. In the scanning exposure, the transfer image is distorted if the scanning stage does not move straight during transfer. When the line width of the pattern to be transferred becomes fine and minute image distortion during exposure poses a problem, other component directions relative to the scanning direction that occur even with the straightness of the air bearing as described above. Unnecessary movement of can not be ignored. For example, even if the straightness of the air bearing is 0.2 μm, if the line width dimension of the pattern to be transferred is 0.4 μm, there is a possibility that a displacement of half the line width may occur, and good exposure transfer performance can be obtained. I can't.

Another factor of image distortion is the influence of deviation of the scanning movement direction of the stage. As the reticle stage scans and moves, the projected image of the pattern on the reticle also moves on the wafer. However, if the moving direction of this projected image and the scanning movement direction of the wafer stage do not match, the transfer image of the entire pattern is transferred. Is distorted diagonally, and good alignment performance cannot be obtained even if patterns are overlapped. Such distortion of the transferred image cannot be ignored as the size of the transferred pattern becomes finer.

The present invention has been made to solve the problems of the above-mentioned conventional apparatus, and an object thereof is to provide a scanning exposure type exposure apparatus and a device manufacturing method using the same, which can obtain good transfer accuracy. To do.

[0009]

In order to solve the above problems, the present invention is an exposure apparatus which projects a part of a pattern of an original onto a substrate and synchronously scans the original and the substrate to expose and transfer the pattern of the original onto the substrate. In, there is provided a stage for scanning and moving the original plate or the substrate, a reference member provided on the stage for measuring the stage position, and a verification means for verifying the scanning movement direction using the reference member. It is characterized by.

[0010]

【Example】

<Examples of Exposure Apparatus> Examples of the present invention will be described in detail below with reference to the drawings. The exposure apparatus of the present embodiment is a so-called step-and-scan method, that is, a part of a pattern drawn on a reticle as an original is reduced and projected on a wafer, and the reticle and the wafer are scanned in synchronization with each other within a projection plane. By moving, the entire reticle pattern is exposed and transferred to a predetermined area on the wafer, and when the exposure and transfer to one area is completed, the wafer is moved stepwise and the scanning exposure operation is repeated to another area. , A plurality of patterns are arranged and transferred on the entire surface of the wafer.

FIG. 1 is a side view of the exposure apparatus of this embodiment, FIG. 2 is a plan view of a reticle stage, FIG. 3 is a plan view of a wafer stage, and FIG. 4 is a block diagram of a stage control system.

In FIGS. 1, 2 and 4, reference numeral 11 denotes a reticle which is an original plate and a pattern to be transferred is drawn. Reference numeral 12 is a reticle chuck on which a reticle is mounted. 2 is a reticle stage for scanning and moving the reticle, and the reticle stage 2 is a frame 3
It is installed in. The reticle stage 2 is composed of a driving unit and a guiding unit for scanning and moving the reticle, a measuring unit for measuring the position of the reticle in the scanning direction x _r , and the posture in the scanning plane. The drive means of the reticle stage 2 uses a linear motor 21. A driver 221 drives the linear motor 21 of the reticle stage. Reticle stage 2
The guide means uses an air bearing, and is composed of a plurality of air pads (not shown) fixed to the movable portion of the stage and guide members 222 and 223 that support the air pads. The guide members 222 and 223 are held by the frame 3. The direction of scanning movement of the reticle is determined by this guide member.

Reference numeral 31 is a flow path through which a temperature-adjusting liquid medium flows. By flowing temperature-controlled water or the like through this flow path, the frame 3 is affected by the temperature change of the environment or the heat of the drive system. I try not to deform it. A laser length measuring device is used as a means for measuring the position and orientation of the reticle.
Reference numerals 231, 232, and 233 are length measurement mirrors fixed to the movable portion of the reticle stage. Reference numerals 231 and 232 are corner cubes, and 233 is a plane mirror having a highly flat reflecting surface. The reflecting mirror has a reflecting surface having a length sufficient for the stroke of the reticle stage, and the movement of the reticle stage is determined by the guide means. It is fixed so that it is parallel to the direction. Interferometers 241, 242 and 243 are fixed to the frame 3. A laser light source (not shown) supplies laser light to the interferometer and the mirror for length measurement. Corner cube 231 and interferometer 2
41, the corner cube 232, and the interferometer 242 are arranged at symmetrical positions with respect to the center of the exposure area, and at the respective positions, the positions x _r1 and x _{r2 in} the scanning direction of the reticle.
Is designed to measure. The plane mirror 233 can measure the position y _{r in} the direction perpendicular to the scanning direction. 244, 245, and 246 are receivers that convert the output of the interferometer into an electric signal. Reference numeral 247 in FIG. 4 is a converter for converting the output of each interferometer into a position signal, and 81 is a reticle stage controller for controlling the reticle stage based on the position output in the scanning direction of the interference system.

The position x _r of the reticle center in the scanning direction is calculated as follows from the average value of the position output signals x _r1 and x _r2 of the two interferometers 241 and 242 for measuring the position of the reticle stage in the scanning direction. You can ask.

[0015]

[Outer 1]

The reticle stage controller 81 sends a control signal to the driver 221 of the linear motor 21 based on x _r . Reference numeral 4 denotes a projection optical system for projecting the reticle pattern onto the wafer, which reduces a part of the reticle pattern by 0.25 times and forms an image on the wafer. An illumination optical system (not shown) for illuminating the reticle and a projection optical system 4
And, a part of the pattern on the reticle is reduced and imaged on the wafer.

Next, the periphery of the wafer stage will be described with reference to FIGS. The stage for moving the wafer within the projection plane is movable in the in-plane rotation direction (θ direction), the scanning direction (x _w direction), and the direction perpendicular to the scanning direction (y _w direction). It is an xyθ stage. Reference numeral 51 denotes a wafer, the surface of which is coated with a photosensitive agent.
Reference numeral 52 is a wafer chuck that holds the wafer. The position and orientation of the wafer stage is measured by a laser length measuring device. Reference numerals 611 and 612 denote length-measuring plane mirrors fixed to the wafer chuck 52 and have a sufficient length for a stroke for scanning and exposing the entire surface of the wafer.
Interferometers 621, 622, and 623 are fixed to the frame 3. A laser beam is applied to a position at the center of the exposure area of the reflection surface of the plane mirror 611, and the position x _{w in} the scanning direction of the wafer can be measured by the interferometer 621. Further, by applying laser light to two points on the reflecting surface of the plane mirror 611 and causing them to interfere with each other, the rotational position θ _w on the projection plane of the wafer can be measured. The interferometer 623 can measure the position y _{w in} the direction perpendicular to the scanning direction of the wafer. 624,
Reference numerals 625 and 626 are receivers that convert the output of the interferometer into an electric signal. Reference numeral 627 is a converter for converting the output of each interferometer into a position signal. Reference numeral 631 denotes an autocollimator fixed to the frame 3, and a length measurement mirror 612.
It is for measuring the inclination of the reflection surface of. Reference numeral 711 denotes a θ stage for rotationally moving the wafer within the image plane. Although not shown in detail, for example, the actuator is a piezo element and the guide is a leaf spring member arranged radially.

Reference numeral 712 is a driver for driving the θ stage. The rotary stage is mounted on the X stage for moving further in the scanning direction. 72 is a linear motor of the X stage. Reference numerals 721 and 722 are air bearing guides for the X stage. 723 is a driver for driving the linear motor 72. The X stage is mounted on a Y stage that is movable in a direction perpendicular to the x _w direction.
A 73Y stage linear motor. 731,732
Is a guide for the air bearing of the Y stage and is fixed to the frame 3. 733 is a driver for driving the linear motor 73. The drive means for each axis forming the wafer stage is controlled based on the position signal of the length measurement system of the wafer stage. Therefore, the coordinate system of the wafer stage is based on the coordinate system of the measurement system by the laser interferometer, and the direction of each axis of the coordinate system depends on the attitude of the length-measuring mirrors 611 and 612. Reference numeral 82 is a wafer stage controller for controlling the wafer stage, 83 is a stage system controller for controlling the operations of the reticle stage and the wafer stage, and 84 is a controller for controlling the entire exposure apparatus.

Next, the operation of exposing the first layer on the wafer in this embodiment having the above-mentioned structure will be described. Figure 5
FIG. 6 is a diagram showing a relationship between a position command value X _{r in} the scanning direction of the reticle stage and time. In the figure, time t ₁ is the time when the movement of the reticle stage is started, and when the movement is started, acceleration is started until a predetermined speed is reached. Time t ₂ is the time when the acceleration operation ends, and from this time point, the reticle stage moves at a constant speed. Time t ₃ is the time at which exposure is started, at which point the reticle pattern enters the exposure area and the pattern is projected onto the wafer. Time t ₄ is the time when the exposure ends. Time t ₅ is the time when deceleration of the reticle stage is started, and time t 5
₆ is the time when the movement ends. Stage system controller 83
Sends a command to the reticle stage controller 81 so as to match a predetermined traveling pattern as shown in FIG.

FIG. 6 shows the relationship between the measured position x _r of the reticle in the scanning direction and the time, and the actual movement of the reticle stage in the scanning direction moved based on the command shown in FIG. The results are shown. 5 and 6 are slightly different.

FIG. 7 shows the position outputs x _r1 and 2 of the interferometer 241.
A value obtained by dividing the difference from the position output x _{r2 of} 42 by the length L, that is, the relationship between the rotational position θ _{r of the} reticle and time, is represented by the following equation (2).

[0022]

[Outside 2]

FIG. 8 shows the positional output of the interferometer 243, that is, the relationship between time and the direction perpendicular to the scanning direction of the reticle. In FIG. 7 and FIG. 8, an unnecessary movement component that is another component with respect to the scanning movement direction of the reticle stage is included. The main causes of the unnecessary movement component are that the guide members 222 and 223 of the air bearing of the reticle stage are not straight, and that the disturbance vibration that affects the reticle stage is the main one. Moreover, these measured values include measurement errors. In the measurement value of y _r shown in FIG. 8, the flatness of the length-measuring mirror 233 influences the measurement error, so the measurement value has an error of, for example, about 10 nm. In addition to this, there is also an error component caused by the inclination α (deviation from parallel) between the length measurement mirror 233 and the scanning movement direction of the reticle stage.

The position information shown in FIGS. 6, 7 and 8 is sent to the stage system controller 83. Stage system controller 83
Then, the calculation to convert to the position on the wafer stage is performed,
Further, it is converted into the drive amount of each stage constituting the wafer stage.

In the present embodiment, the scanning movement direction of the reticle stage is determined by the guide members 222, 22 of the reticle stage.
It is determined based on 3. On the other hand, the coordinate system of the wafer stage is determined based on the measurement system by the laser interferometer, and the length-measuring plane mirror 612 on the wafer stage is the reference in the x-axis direction. When the reticle stage is scanned and moved, the projected image of the reticle pattern projected on the wafer also moves. The movement direction of the projected image does not necessarily have to coincide with the x-axis direction of the wafer stage coordinate system, and the x-axis and y-axis of the wafer stage are moved in coordination to move the wafer in the scanning direction and the projected image. It is possible to match the direction of the scanning movement of. The angle β formed by the direction of the x axis of the coordinate system of the wafer stage determined by the length-measuring mirror 612 and the direction of scanning movement of the projection image on the wafer is determined by the direction of the scanning movement of the wafer stage in the coordinate system of the wafer stage. It can be estimated by exposing a predetermined pattern in alignment with the x-axis direction and measuring and evaluating the image distortion of the transferred pattern.

Further, in the scanning exposure method, the magnification in the scanning direction and the magnification in the direction perpendicular to the scanning direction can be made different. The exposure magnification in the scanning direction is a speed ratio N between the scanning speed of the wafer stage and the scanning speed of the reticle stage.
The exposure magnification in the direction perpendicular to the scanning direction is determined by _st and the magnification N _op of the exposure optical system.

From the above, sin α = α, sin β
In the range that can be regarded as β, the conversion to the position on the wafer stage is determined by the amount represented by the following equation.

[0028]

[Outside 3] When N _op = N _st , Θ _w = θ _r (6) may be used instead of the equation (5).

When the controllability of the reticle stage in the scanning direction is excellent, the command value X _r is used instead of the measured value x _r of the position of the reticle stage in the scanning direction in equations (3) and (4). You may use. Where X _w , Y _w , Θ _w
Respectively correspond to the position of the wafer stage in the xyθ coordinate system. In the actual conversion to the coordinate system determined by the laser interferometer on the wafer stage, the measurement by the laser interferometer cannot measure the absolute position because of the measurement principle.
_The calculation is performed in consideration of the amount of movement from the predetermined reference position, including the measured values of _r1 , y _{r and the} like. The signs in the equations may change depending on how to take the direction of each axis in each coordinate system.

The wafer stage controller 82 configures a wafer stage such that an X stage, a Y stage, and a wafer stage are arranged so that the position represented by the above equation and the position of the wafer coincide with each other at least during exposure, that is, from t ₃ to t ₄ . Control the θ stage. In controlling, since the drive axes of the wafer stage interfere with each other, the drive amount of each axis is determined according to the position of the exposure area in the wafer. That is, when the θ stage is operated, the exposure area of the wafer is also moved in the x-axis direction and the y-axis direction, and therefore the x-axis and y-axis are controlled in consideration of this movement amount.

By the operation described above, the unnecessary movement component of the reticle stage is corrected by the drive system of the wafer stage, so that the straightness of the scanning movement can be performed with the accuracy of the measurement system regardless of the straightness of the scanning movement of the reticle stage. Is obtained. For example, the machining accuracy of the straightness of the guide member is 0.
It is about 2 μm, but the mirror 233 for length measurement is 0.02
It can be processed to about μm. A value obtained by multiplying this difference in accuracy by the exposure magnification improves the straightness on the wafer. Therefore, in this example, the image distortion due to the scanning exposure is 0.04
It can be reduced by about 5 μm.

When the value of the angle β formed by the direction of the x axis of the coordinate system of the wafer stage determined by the length-measuring mirror 612 and the direction of the scanning movement of the projected image on the wafer changes, the above equation is used. By changing the scanning movement direction of the wafer stage according to the change of β, it is possible to prevent the transferred image from being skewed. In the exposure apparatus of the present embodiment, the change of β is caused by the change of the attitude of the length measuring mirror 612 due to the influence of the acceleration force applied to the wafer stage.

As described above, the change in the angle β causes the scanning movement direction of the wafer stage to coincide with the x-axis direction of the coordinate system of the wafer stage to expose a predetermined pattern,
It can be obtained by re-evaluating the image distortion of the transferred pattern. Further, the inclination ω of the length-measuring plane mirror 612 with respect to the frame 3 about the θ-axis can be measured more easily by measuring with the autocollimator 631. In this method, the inclination β ₀ between the scanning movement direction of the projected image and the x-axis direction of the wafer stage is obtained by first evaluating the image distortion of the transferred pattern, and is automatically measured during the exposure operation during this transfer. The plane mirror 61 for length measurement with respect to the frame 3 measured by the collimator 631
The inclination ω ₀ about the θ axis of the length-measuring reflecting surface 2 is stored. The value of ω measured by the autocollimator is ω ₀
When there is a change with respect to, the change amount (ω−ω ₀ ) is added to the initially evaluated β ₀ , and β is set. That is, β = β ₀ + ω−ω ₀ (7).

By using this correction value, the direction of scanning movement of the projected image and the direction of scanning movement of the wafer can always be matched. When measuring ω, it is preferable that the wafer stage is always at the same position and the autocollimator measurement surface on the length-measuring mirror is always the same. Therefore, each axis of the wafer stage has a reference position. Further, by driving the θ-axis of the wafer stage to rotate the length-measuring mirror 612 around the θ-axis and correcting the reference of the θ-axis so that the indicated value of the autocollimator becomes ω ₀ , the projected image can be projected. The direction of scanning movement and the direction of scanning movement of the wafer can be matched.

When the wafer is scanned and moved, in order to eliminate the effects of disturbance vibration, bending of the guide means of the air bearing, and the like, a position signal obtained from a length measuring device using a laser interference system and a command value for scanning movement are provided. And the actuators of the drive axes of the wafer stage are controlled so that the respective differences become smaller. The position (posture) of the wafer in the θ direction for obtaining the control signal during the scanning movement can be measured by measuring the postures of the length-measuring mirrors 611 and 612 on the wafer stage with a laser interferometer. . However, the position where the laser beam is reflected on the length-measuring mirror 612 is sequentially moved by the scanning movement, so that the signal obtained by measuring the posture of this surface is caused by the subtle waviness component of the reflecting surface. It will also include fluctuations. On the other hand, when measuring the attitude of the length-measuring mirror 611, since the position where the laser light is reflected does not change during the scanning movement, the waviness component of the reflecting surface does not cause a measurement error. Therefore, it is preferable to use a signal obtained by measuring the attitude of the length-measuring mirror 611 as the control signal for controlling the attitude of the wafer in the θ direction during the scanning movement.

The change in the direction of the axis of the coordinate system determined by the position measurement system of the wafer stage can also be known by measuring the attitude of the length-measuring mirror on the wafer stage with respect to the frame. However, if the two length-measuring mirrors 611 and 612 do not move relative to each other, either posture may be measured, but the two mirrors 611 and 6 may be measured.
When the angle formed by each of the 12 length-measuring reflection surfaces changes, the length-measuring reflection surface 612 is parallel to the scanning movement direction.
It is better to measure your posture. By measuring the attitude of the length-measuring mirror 612 and correcting the scanning movement direction,
Even if the orthogonality of the two mirrors changes, it is possible to prevent the scanning movement direction of the wafer and the scanning movement direction of the projected image of the reticle pattern from being deviated due to the influence thereof.

The measuring mirror 233 on the reticle stage moves due to factors such as the acceleration force of the reticle stage,
When the tilt angle α depending on the scanning movement direction of the reticle stage and the direction of the length-measuring reflection surface of the mirror 233 changes, the value of y _r shown in FIG. 8 changes. In this case, the scanning movement direction of the projected image does not change, but the scanning movement direction of the wafer stage changes according to the change of the value of y _r according to the equation (4). If it is due to the influence of the movement of the mirror 233, the change in y _r due to this influence is proportional to x _r and can be distinguished from that due to vibration. In order to eliminate this effect, the change in α can be captured by the method of least squares, for example. The solid line in FIG. 9 indicates the value of y _r obtained by using the length-measuring reflecting surface of the mirror 233 along with the scanning movement of the reticle stage, and the horizontal axis represents the position in the scanning movement direction of the reticle stage. Is the measured value x _r of. The broken line in FIG. 9 is the straight line closest to the solid line, and can be obtained from the value of y _r by the method of least squares or the like. When the mirror 233 moves for some reason and α changes, the angle between the broken line and the horizontal axis in FIG. 9 changes corresponding to this change. Applying equation (4) using the angle between the broken line in FIG. 9 and the horizontal axis as α, the direction of the length-measuring reflecting surface of the mirror 233 and the scanning movement direction of the reticle stage do not match. Further, it is possible to eliminate the correction error in the scanning direction due to the variation of this relationship. Since the timing of calculating α must be performed before the exposure operation for correcting the equation (4), in actuality, for example, in order to obtain the positional deviation information between the wafer and the reticle performed before the exposure operation. at the time of the operation of the scanning movement of the reticle stage, y _r, x
_It is better to keep the data of _r , calculate α and apply it.

When calculating α, another method other than the method of least squares, for example, two representative points of x _r are set, and the average value of y _{r in} the vicinity of these points is determined. Calculate 2
The value obtained by dividing the difference between the two average values by the distance between the two points may be set as α.

Now, FIG. 10 is a view for explaining another embodiment for measuring the tilt angle of the length-measuring mirror, which is shown in FIG.
The same reference numerals represent the same members, and the description of those parts will be omitted. Reference numerals 632 and 633 are non-contact distance measuring sensors, which are fixed to the frame 3. By these distance measuring sensors 632 and 633, the frame 3 and the mirror 612 are
And the distance between the distance measuring sensors 632 and 633, β can be calculated.

The exposure apparatus for reducing and projecting a part of the reticle pattern onto the wafer and transferring the reticle and the wafer while scanning them in synchronization with each other has been described in the embodiment, but the original plate on which the pattern is drawn is described. In the case of an exposure apparatus that transfers while moving the stage that moves the stage and the stage that moves the substrate that transfers the pattern, the direction of the scanning movement of the stage is controlled using the measurement value of the posture of the measurement reference of the stage. Just do it. Further, the measuring means of the posture of the measurement reference is not limited to the autocollimator, and any means may be used as long as it can measure the tilt angle.

According to the above embodiment, the measurement accuracy obtained by the flatness of the length measurement mirror 233 of the reticle stage is more important than the straightness of the scanning movement of the reticle stage obtained by the straightness of the guide member of the reticle stage. By making it sufficiently high, the image distortion at the time of exposure caused by the scanning movement can be reduced, and the exposure performance can be improved. Further, since the reticle stage can be further provided with a fine movement mechanism in a direction other than the scanning direction and the straightness of the guide means of the stage cannot be improved, the straightness of the scanning movement can be substantially improved. Can be reduced.

Even if the attitude of the length measuring mirror or the like of the laser interference system, which is the reference of the stage position measuring system, changes and the direction of the scanning movement of the stage changes, this change is measured. Since the direction of scanning movement is corrected, the exposure performance of image distortion and resolution can be improved.

<Example of Device Manufacturing Method> Next, an example of a device manufacturing method using the above-described exposure apparatus will be described. FIG. 10 shows minute devices (semiconductor chips such as IC and LSI, liquid crystal panels, CCDs, thin film magnetic heads,
The flow of manufacturing a micromachine etc. is shown. Step 1
In (Circuit design), a circuit of a semiconductor device is designed.
In step 2 (reticle production), a reticle on which the designed circuit pattern is formed is produced. On the other hand, in step 3 (wafer manufacturing), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the reticle and the wafer prepared above. The next step 5 (assembly) is called a post-process, and is a process of forming a semiconductor chip by using the wafer manufactured in step 4, such as an assembly process (dicing, bonding), a packaging process (chip encapsulation), and the like. including. In step 6 (inspection), the semiconductor device manufactured in step 5 undergoes inspections such as an operation confirmation test and a durability test. Through these steps, the semiconductor device is completed and shipped (step 7).

FIG. 11 shows a detailed flow of the wafer process. In step 11 (oxidation), the surface of the wafer is oxidized. In step 12 (CVD), an insulating film is formed on the wafer surface. In step 13 (electrode formation), electrodes are formed on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted in the wafer. Step 1
In 5 (resist processing), a photosensitive agent is applied to the wafer. In step 16 (exposure), the circuit pattern of the reticle is printed and exposed on the wafer by the exposure apparatus described above. In step 17 (development), the exposed wafer is developed. In step 18 (etching), parts other than the developed resist image are removed. In step 19 (resist stripping), the resist that is no longer needed after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer. By using the manufacturing method of this embodiment, it is possible to manufacture a highly integrated semiconductor device, which has been difficult to manufacture in the past.

[0045]

According to the present invention, it is possible to provide a scanning exposure type exposure apparatus and a device manufacturing method using the same, which can obtain good transfer accuracy.

[Brief description of drawings]

FIG. 1 is a configuration diagram of an exposure apparatus according to an embodiment.

FIG. 2 is a configuration diagram of a reticle stage of the exposure apparatus of the embodiment.

FIG. 3 is a configuration diagram of a wafer stage of the exposure apparatus of the embodiment.

FIG. 4 is a block diagram of a stage control system of the exposure apparatus of the embodiment.

FIG. 5 is a diagram showing command values for scanning movement of a reticle stage.

FIG. 6 is a diagram showing a measurement value of a position of a reticle stage in a scanning direction.

FIG. 7 is a diagram showing measured values of a position of a reticle stage in a rotation direction.

FIG. 8 is a diagram showing measured values of a position of the reticle stage in a direction perpendicular to the scanning direction.

FIG. 9 is an explanatory diagram for calculating α.

FIG. 10 is a configuration diagram of an embodiment for measuring an inclination of a mirror reflecting surface.

FIG. 11 is a diagram showing a flow of device manufacturing.

FIG. 12 is a diagram showing a detailed flow of a wafer process.

FIG. 13 is a diagram showing a configuration of a conventional exposure apparatus.

[Explanation of symbols]

 11 reticle 12 reticle chuck 2 reticle stage 21 reticle stage linear motor 221 reticle stage linear motor driver 222, 223 reticle stage guide member 231, 232 corner cube 233 plane mirror 241, 242, 243 reticle stage interferometer 244, 245 246 receiver 247 reticle stage length measuring converter 3 frame 31 temperature control water channel 4 projection optical system 51 wafer 52 wafer chuck 611, 612 plane mirror 621, 622, 623 wafer stage interferometer 624, 625, 626 receiver 627 wafer stage Length measuring converter 631 Auto collimator 711 θ stage 712 θ stage driver 713 θ stage actuator 72 X stage linear model 721, 722 X stage guide member 723 x Stage linear motor driver 73 Y stage linear motor 731, 732 Y stage guide member 733 Y stage linear motor driver 81 Reticle stage controller 82 Wafer stage controller 83 Stage system controller 84 Controller for the entire exposure apparatus

Claims (7)

[Claims] 1. A part of an original pattern is projected onto a substrate,
In an exposure apparatus that synchronously scans the original and the substrate to expose and transfer the pattern of the original onto the substrate, a stage for scanning and moving the original or the substrate, and a reference member provided on the stage for measuring the stage position An exposure apparatus comprising: a verification unit that tests the direction of the scanning movement using the reference member. 2. The exposure apparatus according to claim 1, wherein the direction of the scanning movement is corrected based on the verification result of the verification means. 3. The exposure apparatus according to claim 1, wherein the measuring unit has a laser interferometer, and the reference member is a reference reflection mirror for the laser interferometer. 4. The exposure apparatus according to claim 1, wherein the verification unit has an autocollimator provided at a position independent of the stage. 5. The exposure apparatus according to claim 1, wherein the exposure apparatus projects the original pattern on the substrate in a reduced scale and transfers the reduced pattern side by side to a plurality of regions of the substrate. 6. A device manufacturing method comprising a step of manufacturing using the exposure apparatus according to claim 1. Description: 7. A device manufactured by the manufacturing method according to claim 6.