JPH07183574A - Semiconductor light-emitting device - Google Patents

Abstract

PURPOSE:To obtain a semiconductor light-emitting device which can improve the uniformity of an optical output and which can provide a high-quality image by an electrophotographic image formation apparatus, an optical printer or the like. CONSTITUTION:A semiconductor light-emitting device is provided with a light- emitting diode array formed in such a way that a prescribed layer in an edge- luminous light-emitting diode 2 which radiates light from the edge of a laminated structure which contains at least a light-emitting layer and an electrode used to emit light from the light-emitting layer is isolated electrically and spatially by a plurality of isolation grooves at equal intervals. In the semiconductor light-emitting device, a reflection layer 29'' which is smooth and flat is formed on the face of a terrace 29 at the front of the light-radiating face of the edge- luminous light-emitting diode 2.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device used as a light source for an electrophotographic image forming apparatus or an optical printer, and more particularly to a semiconductor light emitting device using a light emitting diode array.

[0002]

2. Description of the Related Art In recent years, research on a light emitting diode array used as a light source for an electrophotographic image forming apparatus, an optical printer, etc. has been advanced, and the light emitting diode array is composed of a self light emitting type array element. . In an electrophotographic image forming apparatus, an optical printer, etc., an electrostatic latent image is formed by causing a light emitting diode array to emit light in accordance with an image signal and forming an image of the light on a surface of a photoconductor with an equal-magnification image forming element. , Printing and printing from this electrostatic latent image by an electrophotographic method or the like.

Conventionally, as shown in FIG. 23, a light emitting substrate 101, which constitutes an optical print head using a light emitting diode array, has wiring members 103 and 104 made of a ceramic substrate or the like on a substrate 102 which also serves as a heat radiating plate. , 105 are attached, and the wiring members 104, 105 are provided with a cable 1 for transmitting image signals and connecting to a power source, respectively.
06 and 107 are connected. Light emitting diode 108
The light emitting diode array chips in which −1 to 108-n (n is a positive integer) are arranged in a line are driver circuits 109-1 to 109-1.
09-n, 110-1 to 110-n, and these driver circuits 109-1 to 109-n, 110-1 to
Reference numeral 110-n is a light emitting diode drive integrated circuit having a built-in serial / parallel conversion for performing serial / parallel conversion of image signals input from the cables 106 and 107.

In the light emitting substrate 101 having such a structure, the image signals are sequentially arranged by the cables 106 and 107 for each column, and the sequential light emitting diode drive circuits 109-1 to 109 are provided.
9-n, 110-1 to 110-n, and the light emitting diode drive circuits 109-1 to 109-n, 110-
1-110-n shifts the image signals for one column and then outputs the image signals in parallel to the light emitting diode drive terminals. In accordance with this, each of the light emitting diodes 108-1 to 108-n is turned on or off for one column. Bright spots for image formation are successively generated.

FIG. 2 shows the relationship between the light emitting portions of the light emitting diodes 108-1 to 108-n and the image forming points on the surface of the photosensitive member.
4, the light emitting diode 2 on the light emitting diode array chip 201-m forming the light emitting diode array.
01-m-p is a Selfox lens array or RML
An equal-magnification imaging system 202 such as A (roof mirror lens array)
An image is formed on the photoconductor 203 composed of a photoconductive drum.

An optical print head using such a light emitting diode array has no moving parts and has a small number of components, and therefore can be miniaturized. In addition, it is a self-luminous type and has a high extinction ratio and good contrast is obtained. Furthermore, by connecting chips, it is possible to support longer lengths, and high output of light emitting diodes can also support high speeds, etc. There is.

As a light emitting diode array used for such an optical print head, a surface emitting type light emitting diode array in which a large number of light emitting portions such as squares are arranged in a predetermined direction in a plane parallel to the substrate surface, and a substrate surface and There is an edge emitting type light emitting diode array or the like that can obtain a large number of light outputs arrayed in a predetermined direction from a vertical edge.

The basic structure of the surface emitting type light emitting diode array is, for example, as shown in FIG.
Electrodes 121 are formed at both ends or around the light emitting portion 120 in order to make the intensity of the obtained light output uniform in the light emitting surface. This is the 1st Proceedings of the National Conference of the Institute of Electronics and Communication Engineers, 1980, page 1-211, JP-A-62-238.
No. 673, etc. In this surface emitting type light emitting diode array, the light emitting section 12 from which the light output is taken out.
Since 0 and the electrode 121 are on the same plane, the width required per unit element is the width of the light emitting portion 120 and the width of the electrode 121.
And the total width of the element isolation regions, for example, 6
It is extremely difficult to form a high-density light emitting portion of 00 dpi (dots per inch) or more.

Further, in the edge emitting type light emitting diode array, a plurality of light emitting portions 122 are formed in a laminated structure on a substrate as shown in FIG. 26, and these light emitting portions 122 are parallel to the substrate surface. Electrically and spatially separated by a separation groove 123 formed in a plane perpendicular to the end surface (Japanese Patent Laid-Open No. 60-3237).
(See Japanese Patent Publication No. 3). In such an edge emitting light emitting diode array, the light emitting portion 122 and the electrodes 124 and 125 from which light output is taken out do not exist on the same surface, and the width required per unit element is the width of the light emitting portion 122 and the element separation groove. The widths of the regions are summed up, and it is possible in principle to form the light emitting portion 122 with a high density of, for example, 600 dpi or more.

Therefore, it can be said that the edge emitting type light emitting diode array is suitable as the light emitting diode array for the high density optical printer. Regarding the variation in the light output of each light emitting diode in the light emitting diode array, due to the recent progress in the crystal growth technology of compound semiconductors, the uniformity of the layer thickness of the crystal growth structure in the substrate, the electrical characteristics of the film, or the optical characteristics As a result, the uniformity of the dynamic characteristics becomes good, and it becomes possible to sufficiently keep the variation in the light output of each light emitting diode of the light emitting diode array in the same chip within ± 5%.

[0011]

An optical printer using the above-mentioned conventional LED array is a light source, a lens, and a drive I.
It consists of three components of C, and it seems that the improvement of the non-uniformity of the optical output of the optical printer has been carried out for each individual component so far, but it is not always satisfactory. Currently, the value of the variation is ~
It reaches as much as ± 50%, and there is a problem that a large difference occurs in the size of print dots and print density.

Considering only the problem of the light source, it is possible to make the variation of the light output of each light emitting diode of the light emitting diode array within ± 5% by, for example, homogenizing the crystal growth layer. Even though
Due to unsolved problems such as mounting variations such as wire bonding for extracting the optical characteristics of the compound semiconductor crystal growth layer of each light emitting diode that constitutes the light emitting diode array and die bonding including the heat dissipation means of the element, the light emitting diode between chips Non-uniformity of the light output is occurring.

In particular, in the conventional edge emitting type light emitting diode array, the light emitting end face is formed by cleavage as shown in FIG. 26, and the cleaving technique itself is a technique which is not stable. Since the shape is not uniform, the light output from the light emitting portion is scattered or absorbed at the light emitting end face, and the light output of the light emitting diode array is not uniform. In addition, since the light emitting end surface is formed by cleavage, the light emitting end surface itself also serves as the substrate end surface, so the light emitting end surface is exposed, and light is emitted during handling for mounting. It is easy to damage the end face,
It was often the case that the uniformity of light output was further deteriorated.

The present invention can improve the above-mentioned drawbacks, improve the uniformity of light output, and enable a high quality image to be obtained in an electrophotographic image forming apparatus, an optical printer or the like. An object is to provide a light emitting device.

[0015]

To achieve the above object, the invention according to claim 1 emits light from an end face of a laminated structure including at least a light emitting layer and an electrode for causing the light emitting layer to emit light. In a semiconductor light emitting device having a light emitting diode array formed by electrically and spatially separating predetermined layers of an edge emitting light emitting diode by a plurality of isolation grooves provided at equal intervals, light emission of the edge emitting light emitting diode A smooth and flat reflective layer is provided on the terrace surface in front of the surface.

According to a second aspect of the present invention, in the semiconductor light emitting device according to the first aspect, the reflection layer is provided in a strip shape over the entire terrace surface in front of the light emitting surface.

According to a third aspect of the present invention, in the semiconductor light emitting device according to the second aspect, the reflective layer is formed of a first metal film.

According to a fourth aspect of the invention, in the semiconductor light emitting device according to the third aspect, there is provided a semiconductor light emitting device for improving adhesion between the terrace surface on the insulating film in front of the light emitting surface and the first metal film. A second metal film is formed on the insulating film, and the first metal film is formed on the second metal film.

According to a fifth aspect of the invention, in the semiconductor light emitting device according to the first aspect, the terrace surface in front of the light emitting surface of the edge emitting type light emitting diode is provided at a part of a position which is paired with each light emitting diode. A reflective layer is provided.

According to a sixth aspect of the present invention, in the semiconductor light emitting device according to the fifth aspect, the reflection layer is formed on a part of the insulating film on the terrace surface in front of the light emitting surface, which is a pair with each light emitting diode. The first metal film is formed.

According to a seventh aspect of the present invention, in the semiconductor light emitting device according to the sixth aspect, there is provided a semiconductor light emitting device for improving adhesion between the terrace surface on the insulating film in front of the light emitting surface and the first metal film. A second metal film is formed on the insulating film, and the first metal film is formed on the second metal film.

According to an eighth aspect of the present invention, in the semiconductor light emitting device according to the first aspect, an insulating film is provided in a strip shape as the reflective layer over the entire terrace surface in front of the light emitting surface.

According to a ninth aspect of the present invention, in the semiconductor light emitting device according to the eighth aspect, the reflective layer is composed of an insulating film and a first metal film provided on the insulating film.

According to a tenth aspect of the present invention, in the semiconductor light emitting device according to the ninth aspect, a second metal film for improving adhesion between the first metal film and the insulating film is formed on the insulating film. And the first metal film is formed on the second metal film.

According to an eleventh aspect of the present invention, in the semiconductor light emitting device according to the eighth aspect, the terrace surface in front of the light emitting surface of the edge emitting type light emitting diode is provided at a part of a position forming a pair with each light emitting diode. A reflective layer is provided.

According to a twelfth aspect of the present invention, in the semiconductor light-emitting device according to the eleventh aspect, on the insulating film provided in a strip shape over the entire terrace surface in front of the light emitting surface, a position to be paired with each light-emitting diode is provided. The first metal film is partially formed as a reflective film.

According to a thirteenth aspect of the present invention, in the semiconductor light emitting device according to the twelfth aspect, a second metal film for improving adhesion between the first metal film and the insulating film is formed on the insulating film. And the first metal film is formed on the second metal film.

According to a fourteenth aspect of the present invention, in the semiconductor light emitting device according to the first aspect, a metal film is directly formed in a strip shape as the reflective layer over the entire terrace surface in front of the light emitting surface.

According to a fifteenth aspect of the present invention, in the semiconductor light emitting device according to the first aspect, the metal film is directly reflected on a part of a position on the terrace surface in front of the light emitting surface, which is paired with each light emitting diode. It is provided as a layer.

[0030]

According to the invention described in claim 1, there is provided a light emitting diode array which is formed by electrically and spatially separating predetermined layers of an edge emitting light emitting diode by a plurality of separation grooves provided at equal intervals. By forming the light emitting end face at the same time as forming the separation groove instead of forming the end face by cleavage, it is possible to realize a high density and uniform light emitting end face shape. Further, by providing a smooth and flat reflecting layer on the terrace surface in front of the light emitting surface of the edge emitting light emitting diode, the peak position of the light intensity of the far field image becomes uniform.

According to a second aspect of the invention, in the semiconductor light emitting device according to the first aspect, since the reflection layer is provided in a strip shape over the entire terrace surface in front of the light emission surface, the directivity of the light output is uniform. Become.

According to a third aspect of the invention, in the semiconductor light emitting device according to the second aspect, since the reflection layer is formed of the first metal film, the peak position of the light intensity of the far-field image becomes uniform.

According to a fourth aspect of the invention, in the semiconductor light emitting device according to the third aspect, a second surface for improving the adhesion between the terrace surface on the insulating film in front of the light emitting surface and the first metal film is provided. A metal film is formed on the insulating film and a first metal film is formed on the second metal film.
By forming the metal film of, the peak position of the light intensity of the far-field image is uniform and does not change with time.

According to a fifth aspect of the present invention, in the semiconductor light emitting device according to the first aspect, a reflective layer is provided at a part of a terrace surface in front of the light emitting surface of the edge emitting light emitting diode, which is a pair with each light emitting diode. By providing the above, the directionality of the light emitted from the light emitting end face is regulated, the influence of the light emitted from the adjacent light emitting diode is eliminated, and the peak position of the light intensity of the far field image becomes more uniform.

According to a sixth aspect of the present invention, in the semiconductor light emitting device according to the fifth aspect, a first reflection layer is provided on a part of the insulating film on the terrace surface in front of the light emitting surface, which is a pair with each light emitting diode. By forming the metal film of, the directionality of the light emitted from the light emitting end face is regulated, and the peak position of the light intensity of the far field image becomes more uniform.

According to a seventh aspect of the present invention, in the semiconductor light emitting device according to the sixth aspect, a second surface for improving the adhesion between the terrace surface on the insulating film in front of the light emitting surface and the first metal film is provided. A metal film is formed on the insulating film and a first metal film is formed on the second metal film.
By forming the metal film of, the peak position of the light intensity of the far-field image is uniform and does not change with time.

According to an eighth aspect of the invention, in the semiconductor light emitting device according to the first aspect, since the insulating film is provided in a strip shape as a reflecting layer over the entire terrace surface in front of the light emitting surface, the reflecting layer becomes uniform. As a result, the peak position of the light intensity of the far-field image becomes uniform.

According to a ninth aspect of the present invention, in the semiconductor light emitting device according to the eighth aspect, the reflective layer is composed of the insulating film and the first metal film provided on the insulating film. The reflectance is improved.

According to a tenth aspect of the invention, in the semiconductor light emitting device according to the ninth aspect, a second metal film for improving the adhesion between the first metal film and the insulating film is formed on the insulating film. By forming the first metal film on the second metal film as a result, the peak position of the light intensity of the far-field image is uniform and does not change with time.

According to an eleventh aspect of the present invention, in the semiconductor light emitting device according to the eighth aspect, a reflection layer is provided at a part of a terrace surface in front of the light emitting surface of the edge emitting light emitting diode, which is paired with each light emitting diode. By providing the, the directionality of the light emitted from the light emitting end face is further regulated.

According to a twelfth aspect of the present invention, in the semiconductor light emitting device according to the eleventh aspect, one of the positions on the insulating film provided in a strip shape over the entire terrace surface in front of the light emitting surface, which is a pair with each light emitting diode. By forming the first metal film as the reflection film on the portion, the peak position of the light intensity of the far-field image becomes uniform, and the directivity of the light output becomes uniform.

According to a thirteenth aspect of the present invention, in the semiconductor light emitting device according to the twelfth aspect, a second metal film for improving adhesion between the first metal film and the insulating film is formed on the insulating film. By forming the first metal film on the second metal film as a result, the peak position of the light intensity of the far-field image is uniform and does not change with time.

According to a fourteenth aspect of the present invention, in the semiconductor light emitting device according to the first aspect, since the metal film is directly formed in a strip shape as a reflective layer over the entire terrace surface in front of the light emitting surface, a far-field image is formed. The peak position of light intensity becomes uniform.

According to a fifteenth aspect of the present invention, in the semiconductor light emitting device according to the first aspect, the metal film is directly reflected on a part of a position on the terrace surface in front of the light emitting surface, which is paired with each light emitting diode. By providing it as a layer, the directionality of the light emitted from the light emitting end face is defined, and the peak position of the light intensity of the far-field image becomes more uniform.

[0045]

EXAMPLES Generally, in an edge emitting light emitting diode, the light emission from the light emitting end face to the back does not contribute much to the light output, but rather the light emission near the light emitting end face mainly contributes to the light output. It is known that the angle θ of the light beam with respect to the direction perpendicular to the light emitting end face is smaller than that of the surface emitting light emitting diode. According to the experiments conducted by the inventors of the present invention, the surface emitting light emitting diode has an angle of about 2θ≈120 °, whereas the edge emitting light emitting diode has an angle 2θ of 30 ° to 100 °. The inventor has confirmed that it is possible to manufacture a semiconductor light emitting device that outputs a desired luminous flux at an angle within the range.

In view of the above, in the present invention, as a means for solving the problem (problem of uniformity of light output) of the above-mentioned conventional edge emitting type light emitting diode array,
Instead of forming the light emitting end surface by cleavage, a method of forming the light emitting end surface at the same time as forming the separation groove between the adjacent elements of the light emitting diode array was adopted. As a result, in the present invention, the shape of the light emitting end face becomes uniform, and the difference in the effect that the output from each light emitting portion is scattered or absorbed by each light emitting end face is reduced, so that the light output of the light emitting diode array becomes uniform. Is expected to improve. In addition, since the light emitting end face is formed by a method that does not depend on cleavage, the light emitting end face itself does not serve as the substrate end face, so that the light emitting end face is not damaged during handling for mounting. Therefore, it is possible to further prevent the uniformity of the light output from being deteriorated.

That is, in the current compound semiconductor device manufacturing process, as shown in FIG. 8, a single crystal wafer 10 having a size of 2 to 3 inches is usually used, and an array such as the edge emitting type light emitting diode array described above is mounted on the wafer 10. Element (light emitting diode) 2 (2-1, 2-2, 2-3 ...
The light-emitting device having the mark () is efficiently arranged and manufactured, and when the array element 2 manufactured on the wafer 10 is cut out from the wafer 10, it is cut along the scribe line 9 by dicing.

As is well known, the dicing technique is a technique for cutting array elements from a wafer while rotating a disk-shaped blade blade at a high speed of about 30,000 rps, and cutting from the wafer 10 along a scribe line 9. In addition, there is a drawback that pitching is likely to occur in the array element. Therefore, in order to prevent damage due to scribing on the light emitting end surface during dicing, it is necessary to take a predetermined distance between the light emitting end surface and the scribe line 9: terrace length (so-called cutting margin + chipping margin).
The terrace taken to prevent damage due to the scribe of the light emitting end surface is called a terrace.

A terrace was formed because the end light emitting diode array was attempted to improve the uniformity of the light output. This terrace has a problem to improve the nonuniformity of the light output of the optical printer. It is insufficient as a means to solve it. That is, in the case of the edge emitting light emitting diode array, there is no problem in the elevation direction from the light emitting end surface of the array element 2, but in the elevation angle direction from the light emitting end surface of the array element 2, for example, as shown in FIG. 29
Is present, the light from the light emitting end surface 6 of the array element 2 is reflected by the terrace surface 29 and then travels in the elevation direction, so that the reflected light from the terrace surface 29 is consequently the light emitting end surface. Due to the mutual interference with the light emitted in the elevation angle direction from No. 6, a far-field image (FFP) having side lobes as shown in FIG. Also,
The peak position of the peak of this far-field image is shown in FIG.
Even in the same array element 2 as shown in (b),
There are cases where the edge light emitting diode is displaced from the designed light output position to the elevation side and cases where it is relatively displaced. This is a serious problem when the edge-emitting type light emitting diodes are arranged in an array and used as a light source of an optical printer, in consideration of the mutual relationship between the lens and the light source. This is because in order to improve the light output uniformity of the optical printer as described above, not only the light output uniformity of the edge-emitting LED array is improved, but at least the mutual relationship with the lens is taken into consideration. It means that it should be done.

That is, as shown in FIG. 24, the light from the light emitting diode 201-mp is imaged on the photosensitive drum 203 via the equal-magnification imaging system 202. And the lens angle Θ (Θ = arctan (φ / 2s),
φ is the effective aperture of the lens, and s is the object distance) are important for making the light output through the lens uniform. That is, since the numerical aperture (NA = nsin Θ, n is the refractive index of the medium) of the unity-magnification imaging element 202 is determined in consideration of MTF (spatial frequency of lens) and the like, from the light emitting end surface of the light emitting diode. If the angle θ of the light flux of
The light utilization rate is reduced due to the light that cannot enter 02. Therefore, efforts are being made to reduce the angle θ of the luminous flux.

This means that when the edge emitting type light emitting diodes are arranged in an array and used as a light source of an optical printer, the angles θ of the light beams from the respective light emitting diodes are made uniform and at the same time, the respective light emitting diodes are emitted. It has been shown that it is important that the peak position of the light intensity of the far-field image of the diode also coincides with the optical axis of the lens array. When the mutual relationship between the lens and the light source is taken into consideration, it is intuitively specialized to reduce the angle θ of the luminous flux, or the uniform light output of a simple edge-emitting LED array is evaluated by an integrating sphere. That is, it is not enough as a means for solving the non-uniformity of the optical output of the optical printer. In other words, it is necessary to make the angle θ of the light flux small and uniform, and at the same time to make the light directivity including the peak position of the light intensity of the far-field image as the edge-emitting LED array uniform. It means that there is.

That is, in consideration of the optical axis of the lens array used in the optical printer, as a means for solving the above problem, a smooth and flat reflection is formed on the terrace surface in front of the light emitting end surface of the edge emitting LED array. By providing a layer and making the light reflected on the terrace surface and then proceeding in the elevation direction uniform, the peak position of the light intensity of the far-field image of each light emitting diode can be made to coincide with the optical axis of the lens array. As a result, it is possible to realize an optical printer using an edge emitting type light emitting diode array which has not been available so far and which can obtain a high density and high quality image.

Next, a first embodiment of the present invention will be described. The first embodiment is an embodiment of the invention described in claims 1 to 3. In the light emitting diode array chip of the first embodiment, as shown in FIG. 2, the edge emitting light emitting diode array 2 has a dot density of 600 dpi, and Ga
On the n-type substrate 1 made of As, 256 elements 2-1 to 2-256 of edge emitting light emitting diodes are formed.

The laminated structure of the light emitting diode array 2 is, as shown in FIG. 1, an n type buffer layer 21, an n type cladding layer 22 made of Al _0.4 Ga _0.6 As, and a light emitting layer on the substrate 1 by MOVPE. Al _0.2 Ga _0.8 active layer 23 made of As, Al _0.4 Ga _{0. 6} consisting As p-type cladding layer 24, p-type cap layer 25 made of GaAs, and made of GaAs doped with zinc at a high concentration p
The mold contact layer 26 has a laminated structure in which a plurality of layers are laminated. Since the laminated structure 2 includes a so-called double hetero structure, the angles θ of the light beams at the depression angle and the elevation angle are equal to each other.

As shown in FIG. 3, the surface of the laminated structure 2, that is, the separation groove 11 reaching the substrate 1 from the upper surface of the contact layer 26 to the surface of the substrate 1 and at right angles to the array direction is dry-etched using a chlorine-based gas. The light emitting diode array 2 is formed by this separation groove 11.
Each of the light emitting diodes therein is electrically and spatially separated. Further, at the same time when the separation groove 11 is formed, the light emitting surface of the light emitting diode is formed on the terrace 29, and Sio ₂ , S
P-type electrode 27 made of each Au-Zn / Au on the contact layer 26 of the light emitting diodes from the mask is formed after the insulating film such iN _X is formed is formed.

Next, the wiring bonding pad 3 (3-
1-3-256), a metal film of Au, Al or the like is formed in a band shape on the entire surface of the terrace 29 in front of the light emitting surface as a reflective layer 29 ″. Au is formed on the back surface of the substrate 1. The n-type electrode 28 made of —Ge / Ni / Au is formed to complete the semiconductor light emitting device of Example 1. The P-type electrode 27 is a light emitting diode of the edge emitting type light emitting diode array 2 as shown in FIG. And electrically connected to the wiring bonding pads 3 (3-1 to 256) arranged behind the wiring pad 3. This protects the elements of the semiconductor light emitting device from damage due to bonding and deteriorates the light emission efficiency. The wiring bonding pads 3 are arranged in four stages in the light emitting direction (the number of the wiring bonding pads 3 does not have to be four), and high-density mounting is possible. Are enabled. The light-emitting diode array chips are connected by the driver circuit chip and wire bonding (not shown) from the wiring bonding pad 3.

The edge emitting type light emitting diode array 2 thus constructed has a MOV excellent in film property uniformity.
Since it is manufactured by the PE method, variations in the optical output within the same light emitting diode array chip are ±
It is below 5%. Thus, in the first embodiment,
By forming the light emitting end surface by dicing instead of by cleavage, a high density and uniform light emitting end surface shape can be realized, and the reflection layer 2 is formed on the resulting terrace 29.
By providing 9 ", it is possible to uniformly form the peak position of the light intensity of the far field image (FFP) so as to coincide with the optical axis of the lens array of the optical printer. This makes it possible to equalize the directivity of the light output of the diode array, and at the same time, to improve the non-uniformity of the light output of the optical printer. Since the light emitting end face itself does not serve as the substrate end face as a result of being formed, the light emitting end face is not damaged during handling for mounting, and therefore it is possible to further prevent the uniformity of light output from being deteriorated. You can

By the way, since the terrace 29 is formed at the same time when the separation groove 11 reaching the substrate 1 from the upper surface of the contact layer 26 to the surface of the substrate 1 at right angles to the array direction is formed by the dry etching method, There are fine irregularities on the terrace 29. This terrace 29
Is covered with an insulating film 4 of SiO ₂ , SiN _x or the like deposited immediately before the wiring bonding pad 3 is formed. Therefore, since the light output from the light emitting portion is scattered or absorbed on the terrace 29 as described above,
A strip-shaped reflective layer 29 ″ is provided over the entire surface of the insulating film 4 such as SiO ₂ or SiN _x on the terrace 29. This makes it possible to make the light output directivity uniform. By forming 29 ″ by a metal film such as Au or Al, the terrace 29 is made flat and smooth. Thereby, the peak position of the light intensity of the far field image (FFP), that is, the light directivity can be made uniform.

In the edge emitting type light emitting diode array 2 on the light emitting diode array chip, which is the light emitting portion of the light source of the optical printer, the n type is the p type at the same time in all layer configurations,
The p-type may be configured as an n-type. Furthermore, the separation groove 11
Are formed perpendicularly to the surface of the substrate 1, but need not necessarily be formed perpendicularly to the surface of the substrate 1, and may be formed substantially perpendicular to the surface of the substrate 1 or not parallel to the active surface 23.
Further, the isolation groove 11 is formed so as to reach the substrate 1 from the surface of the laminated structure 2, but essentially, if the active layers 23 of the respective edge emitting light emitting diodes adjacent to each other are electrically isolated. For the sake of goodness, the bottom of the isolation trench 11 does not necessarily reach the substrate 1, but the bottom of the isolation trench 11 can sufficiently function if it reaches the cladding layer 22 through the active layer 23.

FIG. 4 shows a second embodiment of the present invention. This second embodiment is an embodiment of the invention described in claim 4, and in the first embodiment, the wiring bonding pad 3 (3-
1-3-256), and then a strip of Cr of about 100Å is formed over the entire surface on the terrace 29 in front of the light emitting end face.
After the thin film 30 is formed, a metal film such as Au and Al is formed as a reflective layer 29 ″ on the thin film 30, and wiring bonding pads 3 (3-1 to 256) are formed to form the back surface of the substrate 1. The n-type electrode 28 made of Au-Ge / Ni / Au is formed on the substrate to complete the semiconductor light emitting device.

Since the adhesion of Au to SiO ₂ is difficult, when adhesion between the terrace 29 ″ and the reflective layer 29 ″ is required, both SiO ₂ and Au are used as in the second embodiment. Thin film 30 made of a metal having a good affinity for
Is formed in a strip shape over the entire surface of the terrace 29 (on the insulating film 4 made of SiO ₂ ) in front of the light emitting end face, and then the metal film 29 ″ made of Au is laminated on the terrace 29 to obtain the light of the far field image. It is possible to make the peak position of the intensity uniform and not change with time.

9 and 10 show a third embodiment of the present invention. The third embodiment is an embodiment of the invention described in claims 5 and 6, and in the first embodiment, after forming the wiring bonding pad 3 (3-1 to 256), the light emitting end face is formed. On the front terrace 29, a reflective layer 29 ″ is formed evenly and flatly in a part of the position where it becomes a pair with each of the light emitting diodes 2-1 to 2-256, and the wiring bonding pad 3 (3-1). 3 to 256) and an n-type electrode 28 made of Au—Ge / Ni / Au is formed on the back surface of the substrate 1. This is a semiconductor light emitting device. In order to further regulate the directionality of the light emitted from the end face, a smooth and flat part is formed on the terrace 29 in front of the light emitting end face so as to be paired with the respective light emitting diodes 2-1 to 2-256. On the reflective layer 2 "It is obtained by forming a. This eliminates the influence of the light emitted from the adjacent light emitting diodes, so that the far field image (F.F.
The peak position of the light intensity of P) can be made more uniform. A metal film of Au, Al or the like is used for the reflective layer 29 ″, and a reflectance of about 90% is obtained with this metal film single layer.

FIG. 11 shows a fourth embodiment of the present invention. The fourth embodiment is an embodiment of the invention according to claim 7, and in the first embodiment, the wiring bonding pad 3 is used.
After forming (3-1 to 256), each light emitting diode 2 is formed on the terrace 29 in front of the light emitting end face.
-100 to a part of the position that makes a pair with -1 to 2-256
After forming a Cr thin film 30 of about Å, A on it
A metal film of u, Al or the like is formed as the reflection layer 29 ″, wiring bonding pads 3 (3-1 to 256) are formed, and n made of Au—Ge / Ni / Au is formed on the back surface of the substrate 1.
This is completed as a semiconductor light emitting device by forming the mold electrode 28. In the fourth embodiment, similarly to the second embodiment, the peak position of the light intensity of the far field image can be made uniform and not changed with time. In the fourth embodiment,
The shape of the reflection layer 29 ″ is rectangular, but it may be circular, elliptical, or the like. The shape of the reflection layer 29 ″ may be a far field image (F.F.) of light from the light emitting end face in the direction parallel to the substrate 1. .P) from the light intensity profile.

12 and 13 show a fifth embodiment of the present invention. The fifth embodiment is an embodiment of the invention described in claim 8. The fifth embodiment is the same as the first embodiment except that SiO
₂ , after the deposition of the insulating film 4 such as SiN _x and immediately before the formation of the wiring bonding pad 3 (3-1 to 256).
The surface of the substrate 1 made of aAs is masked on the surface other than the terrace 29 ″ surface, and the terrace 2 is formed by a hydrofluoric acid-based etchant.
After removing the insulating film 4 on the 9 "surface, a terrace 29" on the substrate 1 made of GaAs is formed by a sulfuric acid-based etchant.
The surface is processed to remove irregularities and smoothed, and then a SiO 2 strip is formed over the entire terrace 29 ″ surface in front of the light emitting end surface.
₂ , an insulating film such as SiN _x is used as the reflection layer 29 ″ and has a thickness of 500
About 0Å is formed and the wiring bonding pad 3 (3-1
~ 3-256) is formed on the back surface of the substrate 1 to form Au-Ge /
The semiconductor light emitting device is completed by forming the n-type electrode 28 made of Ni / Au. This fifth
In the embodiment, the reflective layer 29 ″ has a smooth surface of the substrate 1 made of GaAs as an underlayer, so that SiO ₂ , Si is used.
An insulating film such as N _x can be uniformly formed in a strip shape over the entire surface of the terrace 29, and the peak position of the light intensity of the far field image can be made uniform.

FIG. 14 shows a sixth embodiment of the present invention. The sixth embodiment is an embodiment of the invention described in claim 9. Sixth
The embodiment is the same as the first embodiment except that SiO ₂ , SiN _{x is used.}
After depositing the insulating film 4 such as the above and immediately before forming the wiring bonding pads 3 (3-1 to 256-), a mask is formed on the surface other than the terrace 29 ″ surface on the substrate 1 made of GaAs by using a mask. After removing the insulating film 4 on the terrace 29 ″ surface with an acid-based etchant, the terrace 29 ″ surface on the substrate 1 made of GaAs is treated with a sulfuric acid-based etchant to eliminate irregularities and smooth the light. A strip of SiO ₂ , SiN _{x is formed} over the entire surface of the terrace 29 "in front of the end face.
After depositing an insulating film 30 such as a film having a thickness of about 5000 Å, a metal film such as AU and Al is formed as a reflective layer 29 ″, and wiring bonding pads 3 (3-1 to 256) are formed to form the substrate 1. Made of Au-Ge / Ni / Au on the back surface of
This is completed as a semiconductor light emitting device by forming the mold electrode 28. In this sixth embodiment, the reflective layer 2
Since 9 "is formed of a metal film, the reflectance of the reflective layer 29" is improved.

FIG. 15 shows a seventh embodiment of the present invention. The seventh embodiment is an embodiment of the invention described in claim 10. The seventh embodiment is the same as the first embodiment except that SiO ₂ , Si
After the deposition of the insulating film 4 such as N _x and immediately before the formation of the wiring bonding pad 3 (3-1 to 256), GaAs is formed.
After removing the insulating film 4 on the terrace 29 "surface with a hydrofluoric acid-based etchant by masking the surface other than the terrace 29" surface on the substrate 1 made of GaAs, the substrate 1 made of GaAs is removed with a sulfuric acid-based etchant. The surface of the terrace 29 "is treated to make it uneven and smooth, and then the entire surface of the surface of the terrace 29" in front of the light emitting end surface is striped with SiO ₂ , S.
After depositing an insulating film 30 ₁ such as iN _X with a thickness of about 5000 Å, a thin film 30 ₂ of Cr with about 100 Å is formed,
A metal film of AU, Al or the like is formed as the reflection layer 29 ″, and wiring bonding pads 3 (3-1 to 256) are formed to form an n-type film of Au—Ge / Ni / Au on the back surface of the substrate 1. This is completed as a semiconductor light emitting device by forming the electrode 28. In the seventh embodiment, the peak position of the light intensity of the far-field image is uniform and does not change with time as in the second embodiment. it can.

16 and 17 show the eighth embodiment of the present invention.
Show. The eighth embodiment of the invention according to claims 11 and 12
This is an example. The eighth embodiment is the same as the first embodiment.
And SiO₂, SiN_XAfter deposition of the insulating film 4 such as
Of bonding pad 3 (3-1 to 256) for use
Immediately before, the terrace 29 "or above on the substrate 1 made of GaAs
Put a mask on the outer surface and use a hydrofluoric acid etchant.
After removing the insulating film 4 on the terrace 29 "surface,
By the etchant of
Lath 29 "surface is treated to make it smooth and smooth.
Then, over the entire surface of the terrace 29 ″ surface in front of the light emitting end surface
Band-shaped SiO ₂, SiN_XInsulation film 30 of thickness 5000
After depositing about Å, on the terrace 29 surface in front of the light emitting end surface
In pairs with the respective light emitting diodes 2-1 to 2-256 of
At a position such that a gold layer such as Au or Al is formed as the reflection layer 29 ″.
A metal film is formed, and the wiring bonding pad 3 (3-1 to 3-1
3-256) is formed and Au-Ge / N is formed on the back surface of the substrate 1.
By forming the n-type electrode 28 made of i / Au
This is completed as a semiconductor light emitting device.

In the eighth embodiment, a strip-shaped insulating film 30 is deposited over the entire surface of the terrace 29 ″, and then each of the light emitting diodes 2 on the surface of the terrace 29 in front of the light emitting end face.
By forming the smooth and flat reflective layer 29 ″ at a position to be paired with −1 to 2-256, the directionality of the light emitted from the light emitting end face can be further regulated, and the reflective layer 29 ″ can be formed by Au, By forming the metal film of Al or the like, the peak position of the light intensity of the far-field pattern can be made uniform, and the directivity of the light output can be made uniform.

FIG. 18 shows a ninth embodiment of the present invention. The ninth embodiment is an embodiment of the invention described in claim 13. The ninth embodiment is the same as the first embodiment except that SiO ₂ , Si
After the deposition of the insulating film 4 such as N _x and immediately before the formation of the wiring bonding pad 3 (3-1 to 256), GaAs is formed.
After removing the insulating film 4 on the terrace 29 "surface with a hydrofluoric acid-based etchant by masking the surface other than the terrace 29" surface on the substrate 1 made of GaAs, the substrate 1 made of GaAs is removed with a sulfuric acid-based etchant. The surface of the terrace 29 "is treated to make it uneven and smooth, and then the entire surface of the surface of the terrace 29" in front of the light emitting end surface is striped with SiO ₂ , S.
The insulating film 30 ₁ such iN _X after thickness 5000Å about deposition, on the order of 100Å to each light emitting diode 2-1～2-256 and such that the relative position of the light emitting end face in front of the terrace 29 faces Cr forming a thin film 30 ₂ made of, Au as the reflective layer 29 ", a metal film such as Al, to form a wiring bonding pad 3 (3-1～3-256) on the rear surface of the substrate 1 Au- This is completed as a semiconductor light emitting device by forming an n-type electrode 28 made of Ge / Ni / Au In this ninth embodiment, the peak position of the light intensity of the far-field image is set similarly to the second embodiment. It is uniform and can be prevented from changing over time.

19 and 20 show a tenth embodiment of the present invention. The tenth embodiment is an embodiment of the invention described in claim 14. The tenth embodiment is made of GaAs after depositing the insulating film 4 made of SiO ₂ , SiN _x or the like and immediately before forming the wiring bonding pads 3 (3-1 to 256) in the first embodiment. The surface of the substrate 1 other than the terrace 29 "surface is masked, and the insulating film 4 on the terrace 29" surface is removed by a hydrofluoric acid-based etchant. The 29 ″ surface is processed to make it uneven and smooth, and then a metal film of Au, Al or the like having a film thickness of about 5000Å is formed as a reflection layer 29 ″ over the entire terrace 29 ″ surface in front of the light emitting end surface. , Wiring bonding pad 3
(3-1 to 256) are formed and Au is formed on the back surface of the substrate 1.
This is completed as a semiconductor light emitting device by forming the n-type electrode 28 of -Ge / Ni / Au.
In the tenth embodiment, the reflection layer 29 ″ can be uniformly formed in a strip shape over the entire surface of the terrace 29, and the peak position of the light intensity of the far field image can be made uniform.

21 and 22 show an eleventh embodiment of the present invention. The eleventh embodiment is an embodiment of the invention described in claim 15. The eleventh embodiment is composed of GaAs after depositing the insulating film 4 of SiO ₂ , SiN _x or the like and immediately before forming the wiring bonding pads 3 (3-1 to 256) in the first embodiment. After the insulating film 4 on the terrace 29 "surface is removed by using a mask on the surface other than the terrace 29" surface on the substrate 1 with a hydrofluoric acid-based etchant, each light emission on the terrace 29 surface in front of the light emitting end surface is performed. The reflective layer 2 is placed at a position where it is paired with the diodes 2-1 to 2-256.
9 ″, a metal film of Au, Al or the like is directly formed, wiring bonding pads 3 (3-1 to 256) are formed, and n made of Au—Ge / Ni / Au is formed on the back surface of the substrate 1.
This is completed as a semiconductor light emitting device by forming the mold electrode 28.

In the eleventh embodiment, a metal film of Au, Al or the like is directly formed as a reflection layer 29 "at a position on the surface of the terrace 29 so as to face the respective light emitting diodes 2-1 to 2-256. Therefore, it is possible to prevent unnecessary light from being emitted from, for example, the adjacent light emitting diode in the light emitting direction of the light emitting diode, and to obtain a high-quality image with a uniform print dot size and print density in an optical printer. In addition, since the terrace in front of the light emitting end surface of the edge emitting light emitting diode array does not serve as the substrate end surface itself, the light emitting end surface may be damaged during handling for mounting. In addition, the uniformity of light output and the yield of devices can be improved.

FIG. 7 shows the light intensity profile of the far-field pattern (FFP) of each light emitting diode measured by using the sample of the fifth embodiment (edge emitting light emitting diode array element) in the array direction. FIG. 3 is a diagram spatially arranged side by side. As shown in FIG. 7, the interaction between the light emitted above the edge-emitting light-emitting diode element and the light emitted below the edge-emitting light-emitting diode element and reflected directly on the terrace surface and then heading upward. You can observe the side lobes that appeared. On the other hand, the position of maximum light intensity in the array direction is uniform between adjacent light emitting diode elements. As described above, in the edge emitting type light emitting diode array element of the above-described embodiment, a uniform light output can be obtained. As described above, the validity of the principle of the present invention was clarified by the experimental verification, and it was confirmed that the edge-emitting light emitting diode array according to the present invention has much more uniform light output than the conventional one. It was The present invention can be used as a light source of an electrophotographic image forming apparatus other than an optical printer to obtain the same effect.

[0074]

As described above, according to the first aspect of the invention, the edge emitting light emitting diode that emits light from the edge of the laminated structure including at least the light emitting layer and the electrode for causing the light emitting layer to emit light. In a semiconductor light emitting device having a light emitting diode array formed by electrically and spatially separating predetermined layers in a plurality of equally spaced separation grooves,
Since a smooth and flat reflective layer is provided on the terrace surface in front of the light emitting surface of the edge emitting light emitting diode, it is possible to make the light output directivity of the edge emitting light emitting diode array uniform. At the same time, it becomes possible to improve the non-uniformity of the optical output of the optical printer. Further, since the light emitting end face is formed by dicing instead of cleavage, the light emitting end face itself does not serve as the substrate end face, so that the light emitting end face is not damaged during handling for mounting. Therefore, it is possible to further prevent the uniformity of the light output from being deteriorated.

According to the invention described in claim 2, in the semiconductor light emitting device according to claim 1, since the reflection layer is provided in a strip shape over the entire terrace surface in front of the light emission surface, the directivity of the light output is obtained. Can be made uniform.

According to the invention described in claim 3, in the semiconductor light emitting device according to claim 2, since the reflection layer is formed of the first metal film, the light intensity of the far field image (FFP). The peak position, that is, the light directivity can be made uniform.

According to the invention described in claim 4, in the semiconductor light emitting device according to claim 3, in order to improve the adhesion between the terrace surface on the insulating film in front of the light emitting surface and the first metal film. Since the second metal film is formed on the insulating film and the first metal film is formed on the second metal film, the peak position of the light intensity of the far field image is uniform and changes with time. You can turn it off.

According to a fifth aspect of the present invention, in the semiconductor light emitting device according to the first aspect, a part of a position on the terrace surface in front of the light emitting surface of the edge emitting type light emitting diode, which is paired with each light emitting diode. Since the reflection layer is provided in the above, the peak position of the light intensity of the far field image (FFP) can be made more uniform without being affected by the light emitted from each adjacent light emitting diode.

According to a sixth aspect of the present invention, in the semiconductor light emitting device according to the fifth aspect, the reflection is formed on a part of the insulating film at a position which is paired with each light emitting diode on the terrace surface in front of the light emitting surface. Since the first metal film is formed as the layer, the directionality of the light emitted from the light emitting end face can be regulated, and the peak position of the light intensity of the far field image can be made more uniform.

According to the invention of claim 7, in the semiconductor light emitting device of claim 6, in order to improve the adhesion between the terrace surface on the insulating film in front of the light emitting surface and the first metal film. The second metal film is formed on the insulating film, and the first metal film is formed on the second metal film. It is possible to make the peak positions uniform and not change over time.

According to the eighth aspect of the present invention, in the semiconductor light emitting device according to the first aspect, since the insulating film is provided in a strip shape as the reflective layer over the entire terrace surface in front of the light emitting surface, the reflective layer is formed. It can be formed in a strip shape uniformly over the entire terrace surface, and the peak position of the light intensity of the far-field image can be made uniform.

According to the ninth aspect of the present invention, in the semiconductor light emitting device according to the eighth aspect, the reflection layer is composed of the insulating film and the first metal film provided on the insulating film. Since the layer 29 ″ is formed of the metal film, the reflectance of the reflective layer ″ can be improved.

According to the invention of claim 10, claim 9 is provided.
In the semiconductor light emitting device described in the above, a second metal film for improving adhesion between the first metal film and the insulating film is formed on the insulating film, and the second metal film is formed on the second metal film. 1
Since the metal film of No. 4 is formed, the peak position of the light intensity of the far-field image can be made uniform and not change with time, as in the case of the present invention.

According to the invention of claim 11, claim 8 is provided.
In the semiconductor light emitting device described, in the terrace surface in front of the light emitting surface of the edge emitting light emitting diode, since the reflection layer is provided in a part of the position that is paired with each light emitting diode, the light emitted from the light emitting end surface Further directionality can be defined.

According to the invention of claim 12, claim 1
1. The semiconductor light-emitting device according to 1, wherein the first portion is provided at a part of a position that is paired with each light-emitting diode on an insulating film provided in a strip shape over the entire terrace surface in front of the light emitting surface.
Since the above metal film is formed as a reflection film, the peak position of the light intensity of the far-field image can be made uniform, and the directivity of the light output can be made uniform.

According to the invention of claim 13, claim 1
2. The semiconductor light emitting device according to 2, wherein a second metal film for improving adhesion between the first metal film and the insulating film is formed on the insulating film, and the second metal film is formed on the second metal film. Since the first metal film is formed, it is possible to make the peak position of the light intensity of the far-field image uniform and not change with time as in the case of the invention of claim 4.

According to the invention of claim 14, claim 1
In the semiconductor light emitting device described above, since the metal film is directly formed in a strip shape as the reflection layer over the entire terrace surface in front of the light emission surface, the reflection layer can be uniformly formed in a strip shape over the entire terrace surface. , The peak position of the light intensity of the far-field image can be made uniform.

According to the invention of claim 15, claim 1
In the semiconductor light emitting device described above, a metal film is provided as the reflective layer directly on a part of a position on the terrace surface in front of the light emitting surface, which is paired with each light emitting diode, so that it is unnecessary in the light emitting direction of the light emitting diode. It is possible to prevent the emission of various light, and it is possible to obtain a high-quality image in which the size of the print dots and the print density are uniform in an optical printer or the like. In addition, since the light emitting end face itself does not serve as the substrate end face due to the terrace in front of the light emitting end face of the edge emitting light emitting diode array, the light emitting end face is not damaged during handling for mounting, and the light output is uniform. The yield of the device can be improved.

[Brief description of drawings]

FIG. 1 is a cross-sectional view showing a first embodiment of the present invention.

FIG. 2 is a plan view showing the first embodiment.

FIG. 3 is a perspective view showing a part of the first embodiment.

FIG. 4 is a sectional view showing a second embodiment of the present invention.

FIG. 5 is a cross-sectional view for explaining the principle of the basic idea of the present invention.

FIG. 6 is a diagram showing an example of a far-field image.

FIG. 7 is a view spatially showing the far-field images of the embodiment of the present invention arranged in the array direction.

FIG. 8 is a perspective view showing a light emitting diode array chip group formed on a single crystal wafer.

FIG. 9 is a sectional view showing a third embodiment of the present invention.

FIG. 10 is a perspective view showing a part of the third embodiment.

FIG. 11 is a sectional view showing a fourth embodiment of the present invention.

FIG. 12 is a sectional view showing a fifth embodiment of the present invention.

FIG. 13 is a perspective view showing a part of the fifth embodiment.

FIG. 14 is a sectional view showing a sixth embodiment of the present invention.

FIG. 15 is a sectional view showing a seventh embodiment of the present invention.

FIG. 16 is a sectional view showing an eighth embodiment of the present invention.

FIG. 17 is a perspective view showing a part of the eighth embodiment.

FIG. 18 is a sectional view showing a ninth embodiment of the present invention.

FIG. 19 is a sectional view showing a tenth embodiment of the present invention.

FIG. 20 is a perspective view showing a part of the tenth embodiment.

FIG. 21 is a sectional view showing an eleventh embodiment of the present invention.

FIG. 22 is a perspective view showing a part of the eleventh embodiment.

FIG. 23 is a perspective view showing a light emitting substrate which constitutes an optical printer head using a conventional light emitting diode array.

FIG. 24 is a diagram showing a relationship between a light emitting portion of a light emitting diode array of an optical printer and an image forming point on a surface of a photoconductor.

FIG. 25 is a plan view showing a conventional surface emitting light emitting diode array.

FIG. 26 is a perspective view showing a conventional edge emitting light emitting diode array.

[Explanation of symbols]

 1 Substrate 2, 2-1 to 2-256 Light emitting diode 11 Separation groove 29 Terrace 29 "Reflection layer

Claims (15)

[Claims] 1. A separation groove in which a plurality of predetermined layers in an edge emitting light emitting diode for emitting light from an end surface of a laminated structure including at least a light emitting layer and an electrode for causing the light emitting layer to emit light are provided at a plurality of equal intervals. In a semiconductor light emitting device having a light emitting diode array formed electrically and spatially by means of the above, a smooth and flat reflective layer is provided on the terrace surface in front of the light emitting surface of the edge emitting light emitting diode. A characteristic semiconductor light emitting device. 2. The semiconductor light emitting device according to claim 1,
A semiconductor light-emitting device, wherein the reflection layer is provided in a strip shape over the entire terrace surface in front of the light emission surface. 3. The semiconductor light emitting device according to claim 2,
A semiconductor light emitting device, wherein the reflective layer is formed of a first metal film. 4. The semiconductor light emitting device according to claim 3,
A second metal film for improving the adhesion between the terrace surface on the insulating film in front of the light emitting surface and the first metal film is formed on the insulating film, and the second metal film is formed on the second metal film. A semiconductor light-emitting device, wherein the first metal film is formed. 5. The semiconductor light emitting device according to claim 1, wherein
A semiconductor light emitting device, wherein the reflection layer is provided at a part of a position which is paired with each light emitting diode on a terrace surface in front of a light emitting surface of the edge emitting light emitting diode. 6. The semiconductor light emitting device according to claim 5,
A semiconductor light emitting device, wherein a first metal film is formed as the reflection layer on a part of an insulating film at a position which is paired with each light emitting diode on a terrace surface in front of the light emitting surface. 7. The semiconductor light emitting device according to claim 6,
A second metal film for improving the adhesion between the terrace surface on the insulating film in front of the light emitting surface and the first metal film is formed on the insulating film, and the second metal film is formed on the second metal film. A semiconductor light-emitting device, wherein the first metal film is formed. 8. The semiconductor light emitting device according to claim 1, wherein
A semiconductor light emitting device, wherein an insulating film is provided in a band shape as the reflective layer over the entire terrace surface in front of the light emitting surface. 9. The semiconductor light emitting device according to claim 8,
A semiconductor light emitting device, wherein the reflective layer is composed of an insulating film and a first metal film provided on the insulating film. 10. The semiconductor light emitting device according to claim 9, wherein a second metal film for improving adhesion between the first metal film and the insulating film is formed on the insulating film. 2. A semiconductor light emitting device, wherein the first metal film is formed on the second metal film. 11. The semiconductor light emitting device according to claim 8, wherein the reflection layer is provided at a part of a position on the terrace surface in front of the light emitting surface of the edge emitting light emitting diode that is paired with each light emitting diode. And a semiconductor light emitting device. 12. The semiconductor light emitting device according to claim 11, wherein the first portion is provided at a part of a position that is paired with each light emitting diode on an insulating film provided in a strip shape over the entire terrace surface in front of the light emitting surface. A semiconductor light-emitting device characterized in that the metal film of 1. is formed as a reflection film. 13. The semiconductor light emitting device according to claim 12, wherein a second metal film for improving adhesion between the first metal film and the insulating film is formed on the insulating film. 2. A semiconductor light emitting device, wherein the first metal film is formed on the second metal film. 14. The semiconductor light emitting device according to claim 1, wherein a metal film is directly formed into a strip shape as the reflecting layer over the entire terrace surface in front of the light emitting surface. 15. The semiconductor light-emitting device according to claim 1, wherein a metal film is directly provided on the terrace surface in front of the light emitting surface as a part of a position to be paired with each light-emitting diode. A characteristic semiconductor light emitting device.