JPH07187766A - Composition for ceramic base plate - Google Patents
Composition for ceramic base plateInfo
- Publication number
- JPH07187766A JPH07187766A JP5352416A JP35241693A JPH07187766A JP H07187766 A JPH07187766 A JP H07187766A JP 5352416 A JP5352416 A JP 5352416A JP 35241693 A JP35241693 A JP 35241693A JP H07187766 A JPH07187766 A JP H07187766A
- Authority
- JP
- Japan
- Prior art keywords
- weight
- composition
- substrate
- ceramic
- titanate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、セラミック基板用の組
成物に関し、特に、導体、抵抗体等の電子回路層を多層
に積層し、焼成してなる高周波用の多層配線基板の材料
として好ましく用いることができるセラミック基板用組
成物に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a composition for a ceramic substrate, and is particularly preferable as a material for a high-frequency multilayer wiring substrate formed by laminating electronic circuit layers such as conductors and resistors in multiple layers and firing the layers. The present invention relates to a ceramic substrate composition that can be used.
【0002】[0002]
【従来の技術】多層配線基板は、装置のダウンサイジン
グに適した基板で、導体や抵抗体等の電子回路を未焼成
のセラミック基板(グリーンシート)等の表面に印刷等
し、この電子回路を印刷した未焼成セラミック基板(グ
リーンシート)を複数枚重ねて焼成したものである。従
来より、Ag、Ag−Pd、Au、Cu等の比較的融点
の低い低抵抗導体と同時焼成が可能な低温焼成多層基板
材料が種々提供されている。また特開平4−28618
1号公報には、ガラスフリットとチタン酸塩で構成され
るセラミック基板用組成物が開示されている。また本発
明者らは、特願平5−45773号において、基板用組
成物を一般的に使用されているAg、Ag−Pd、A
u、Cu等の導体材料やRuO2 等の抵抗体材料と同時
焼成した場合に、両者間の熱膨張係数、濡れ性、その他
の特性のミスマッチによって生じる、多層基板の反り、
基板と前記導体材料や抵抗体材料との界面での剥離(デ
ラミネーション)等の欠点を改善するセラミック基板用
組成物を提供した。2. Description of the Related Art A multilayer wiring board is a board suitable for downsizing of a device, in which electronic circuits such as conductors and resistors are printed on the surface of an unfired ceramic board (green sheet), etc. A plurality of printed unfired ceramic substrates (green sheets) are stacked and fired. BACKGROUND ART Conventionally, various low-temperature fired multilayer substrate materials capable of firing at the same time as a low resistance conductor having a relatively low melting point such as Ag, Ag—Pd, Au and Cu have been provided. In addition, JP-A-4-28618
Japanese Patent Publication No. 1 discloses a composition for a ceramic substrate composed of glass frit and titanate. In addition, the inventors of the present invention have disclosed that, in Japanese Patent Application No. 5-45773, Ag, Ag-Pd, A
When a conductor material such as u or Cu or a resistor material such as RuO 2 is co-fired, the warpage of the multilayer substrate caused by a mismatch in thermal expansion coefficient, wettability, and other characteristics between the two,
Provided is a composition for a ceramic substrate, which improves defects such as delamination at the interface between the substrate and the conductor material or resistor material.
【0003】[0003]
【発明が解決しようとする課題】ところが、従来より提
供されている比較的融点の低い低抵抗導体と同時焼成が
可能な低温焼成多層基板材料は、低温焼成は可能である
が、温度変化に対する静電容量の変化率(以下、TCC
と記す)が大きすぎ、特に高周波用基板に用いる場合に
は、品質の安定性に欠けるという欠点があった。一方、
特開平4−286181号公報に記載されたセラミック
基板用組成物は、TCCを±0〜±100 ppm /℃の範囲
で調整が可能であるが、この基板用組成物を一般的に使
用されているAg、Ag−Pd、Au、Cu等の導体材
料やRuO2 等の抵抗体材料と同時焼成すると、両者間
の熱膨張係数、濡れ性、収縮率、その他の特性のミスマ
ッチにより、多層基板が反ったり、基板と前記導体材料
や抵抗体材料との界面で剥離(デラミネーション)が生
じる欠点があった。さらに、特願平5−45773号に
記載されたセラミック基板用組成物では、TCCを±0
〜±50ppm /℃の範囲で調整が可能となった。しかしな
がら、内部電極として使用されるAg、Ag−Pd、A
u、Cu等の導体材料やRuO2 等の抵抗体材料の形状
の多様化やグリーンシートの層厚や積層数の多様化によ
り、セラミック基板用組成物と上記導体材料や抵抗体材
料との熱膨張係数差、濡れ性、収縮率差、その他の特性
の差をさらに改善しなければ、多層基板がわずかに反っ
たり、基板と前記導体材料や抵抗体材料との界面で剥離
(デラミネーション)がわずかに生じる欠点が発生する
ことが明らかとなった。However, the low temperature multi-layer substrate material, which has been conventionally provided and can be co-fired with a low resistance conductor having a relatively low melting point, can be fired at a low temperature, but it is not affected by temperature change. Rate of change in capacitance (hereinafter TCC
Is too large, and particularly when it is used for a high frequency substrate, there is a drawback that the quality is not stable. on the other hand,
The composition for a ceramic substrate described in JP-A-4-286181 can adjust the TCC in the range of ± 0 to ± 100 ppm / ° C, but this composition for a substrate is generally used. are Ag, Ag-Pd, Au, when resistor material and co-fired, such as conductive materials and RuO 2, such as Cu, the thermal expansion coefficient therebetween, wettability, shrinkage, by mismatch other characteristics, a multilayer substrate There are drawbacks such as warping and peeling (delamination) at the interface between the substrate and the conductor material or resistor material. Furthermore, in the composition for a ceramic substrate described in Japanese Patent Application No. 5-45773, TCC is ± 0.
Adjustment is now possible within the range of ± 50ppm / ℃. However, Ag, Ag-Pd, A used as internal electrodes
Due to the diversification of the shapes of the conductor materials such as u and Cu and the resistor materials such as RuO 2 and the diversification of the layer thickness and the number of layers of the green sheets, the heat generated between the composition for a ceramic substrate and the conductor materials and the resistor materials described above. Unless the expansion coefficient difference, wettability, contraction rate difference, and other characteristics differences are further improved, the multilayer board may warp slightly or delamination may occur at the interface between the board and the conductor material or resistor material. It became clear that a slight defect occurred.
【0004】そこで、本発明は上記従来技術の欠点を解
消し、Ag、Ag−Pd、Au、Cu等の比較的融点の
低い低抵抗導体を多層基板の内部電極として、比較的低
い温度(約800 〜1000℃)で同時焼成することができ、
また電子回路を多層に形成する多層配線基板として要求
される体積固有抵抗、誘電率、誘電正接、絶縁破壊強
度、曲げ強度等の一般的特性を満足し、また高周波基板
の品質の安定性に必要な小さなTCC(±0〜±50 ppm
/℃)に抑えることができ、さらに焼成後の多層配線基
板に反り、電子回路の剥離が生じないセラミック基板用
組成物の提供を目的とする。Therefore, the present invention solves the above-mentioned drawbacks of the prior art, and uses a low resistance conductor having a relatively low melting point such as Ag, Ag-Pd, Au, or Cu as an internal electrode of a multilayer substrate at a relatively low temperature (about Can be co-fired at 800-1000 ℃,
In addition, it satisfies general characteristics such as volume resistivity, dielectric constant, dielectric loss tangent, dielectric breakdown strength, bending strength, etc. required for a multilayer wiring board for forming electronic circuits in multiple layers, and is necessary for the stability of the quality of high-frequency boards. Small TCC (± 0 to ± 50 ppm
/ ° C.), and further, it is intended to provide a composition for a ceramic substrate that does not warp the multilayer wiring substrate after firing and does not cause peeling of an electronic circuit.
【0005】[0005]
【課題を解決するための手段】上記目的を達成するた
め、本発明のセラミック基板用組成物は、酸化物に換算
して、SiO2 が20〜50重量%、Al2 O3 が5〜20重
量%、CaOが10〜20重量%、BaOが0〜10重量%、
MgOが0〜10重量%、ZnOが0〜20重量%、TiO
2 が5〜20重量%、B2 O3 が5〜15重量%、PbOが
4〜25重量%からなるガラス成分を60〜85重量%、チタ
ン酸塩を5〜20重量%、セラミックを10〜35重量%、含
むことを第1の特徴としている。また本発明のセラミッ
ク基板用組成物は、上記第1の特徴に加えて、ガラス成
分とチタン酸塩とセラミックの合計量に対して5重量%
以下のウォラストナイトを含むことを第2の特徴として
いる。また本発明のセラミック基板用組成物は、上記第
1または第2の特徴に加えて、チタン酸塩が、CaTi
O3 、SrTiO3 、MgTiO3 、又はこれらチタン
酸塩の固溶体のうちの少なくとも1種からなることを第
3の特徴としている。また本発明のセラミック基板用組
成物は、上記第1乃至第3のいずれかの特徴に加えて、
セラミックが、アルミナ、ジルコニア、ジルコン、チタ
ニア、マグネシア、ムライトのうちの少なくとも1種か
らなることを第4の特徴としている。In order to achieve the above object, the composition for a ceramic substrate of the present invention has a SiO 2 content of 20 to 50% by weight and an Al 2 O 3 content of 5 to 20% in terms of oxides. % By weight, 10 to 20% by weight of CaO, 0 to 10% by weight of BaO,
0-10% by weight of MgO, 0-20% by weight of ZnO, TiO
2 to 5 to 20% by weight, B 2 O 3 to 5 to 15% by weight, PbO to 4 to 25% by weight, glass component 60 to 85% by weight, titanate 5 to 20% by weight, ceramic 10 The first feature is that the content is up to 35% by weight. The composition for a ceramic substrate of the present invention has, in addition to the above first characteristic, 5% by weight with respect to the total amount of the glass component, the titanate, and the ceramic.
The second feature is that it includes the following wollastonite. In addition to the first or second characteristic, the composition for a ceramic substrate of the present invention has a titanate of CaTi.
The third feature is that it is composed of O 3 , SrTiO 3 , MgTiO 3 , or at least one of solid solutions of these titanates. Further, the composition for a ceramic substrate of the present invention has, in addition to any one of the above first to third characteristics,
A fourth feature is that the ceramic is made of at least one of alumina, zirconia, zircon, titania, magnesia, and mullite.
【0006】上記において、ガラス成分が60重量%未満
では基板の緻密化が困難となり、絶縁破壊強度や曲げ強
度が低下してしまう。またガラス成分が85重量%を越え
ると焼結中にチタン酸塩、セラミック、ウォラストナイ
トとの反応が進み過ぎ、TCC調整が困難となるばかり
でなく、収縮率の調整が困難となる。前記チタン酸塩は
5〜20重量%で用いる。例えばCaTiO3 、SrTi
O3、MgTiO3 、又はこれらチタン酸塩の固溶体の
うちの少なくとも1種からなるチタン酸塩は負のTCC
特性を持つため、正のTCC特性を持つガラス成分と混
合し焼結することによって、基板のTCCを±0〜±50
ppm/℃以内に調整できる。チタン酸塩は、5重量%未
満ではTCC調整剤としての効果がない。逆に20重量%
を越えると、TCCが−50よりも負の値となるばかりで
なく、基板の緻密化が困難となる。上記チタン酸塩のう
ち、基板の焼結性を考慮するとCaTiO3が最も好ま
しい。In the above, if the glass component is less than 60% by weight, it becomes difficult to densify the substrate, and the dielectric breakdown strength and bending strength decrease. On the other hand, if the glass component exceeds 85% by weight, the reaction with titanate, ceramics and wollastonite proceeds too much during sintering, which makes it difficult to adjust the TCC and also difficult to adjust the shrinkage ratio. The titanate is used in an amount of 5 to 20% by weight. For example, CaTiO 3 , SrTi
A titanate composed of O 3 , MgTiO 3 or at least one of solid solutions of these titanates has a negative TCC.
Since it has characteristics, the TCC of the substrate is ± 0 to ± 50 by mixing with a glass component having positive TCC characteristics and sintering.
It can be adjusted within ppm / ℃. If the titanate is less than 5% by weight, it has no effect as a TCC modifier. On the contrary, 20% by weight
If it exceeds, not only TCC becomes a negative value than −50, but also it becomes difficult to densify the substrate. Of the above titanates, CaTiO 3 is the most preferable in consideration of the sintering property of the substrate.
【0007】前記セラミックは10〜35重量%で用いる。
例えば、アルミナ、ジルコニア、ジルコン、チタニア、
マグネシア、ムライトは、それらの単独または組み合わ
せにおいて、基板の熱膨張係数調整や耐熱性付与に寄与
するのみならず、基板の収縮率をAg、Ag−Pd、A
u、Cu等の導体材料やRuO2 等の抵抗体材料と一致
させることができる。セラミックは、10重量%未満で
は、焼結体の収縮率の調整が困難となり、基板にわずか
の反りが生じる。35重量%を越えると、基板の緻密化が
困難となり、耐電圧特性も悪くなる。上記ジルコニアに
は部分安定化ジルコニアや安定化ジルコニアも含む。The ceramic is used at 10 to 35% by weight.
For example, alumina, zirconia, zircon, titania,
Magnesia and mullite, alone or in combination, not only contribute to adjusting the thermal expansion coefficient of the substrate and imparting heat resistance, but also reduce the shrinkage ratio of the substrate to Ag, Ag-Pd, A.
It can be matched with a conductor material such as u or Cu or a resistor material such as RuO 2 . If the ceramic content is less than 10% by weight, it becomes difficult to adjust the shrinkage ratio of the sintered body, and the substrate is slightly warped. If it exceeds 35% by weight, it becomes difficult to densify the substrate and the withstand voltage characteristics deteriorate. The above-mentioned zirconia also includes partially stabilized zirconia and stabilized zirconia.
【0008】多層配線基板として要求される体積固有抵
抗、誘電率、誘電正接、絶縁破壊強度、曲げ強度等の一
般的特性を満足し、また高周波基板の品質の安定性に必
要な小さなTCC(±0〜±50 ppm/℃)に抑え、さら
に焼成後の多層配線基板に反り、電子回路の剥離が生じ
ないように、それらの各特性をバランスよく得るために
は、前記ガラス成分とチタン酸塩とセラミックの比率は
それぞれ63〜80重量%、7〜15重量%、12〜30重量%と
するのがより好ましい。この場合及び上記第1の特徴に
おいて、ガラス成分とチタン酸塩とセラミックの合計は
100 重量%である。A small TCC (±) which satisfies general characteristics such as volume resistivity, dielectric constant, dielectric loss tangent, dielectric breakdown strength, bending strength, etc. required for a multilayer wiring board and which is necessary for stability of quality of a high frequency board. (0 to ± 50 ppm / ° C), and in order to obtain each of these characteristics in a well-balanced manner so as not to warp the multilayer wiring board after firing and peel off the electronic circuit, the glass component and the titanate are used. More preferably, the ratios of the ceramic and the ceramic are 63 to 80% by weight, 7 to 15% by weight, and 12 to 30% by weight, respectively. In this case and in the first feature described above, the sum of the glass component, the titanate, and the ceramic is
100% by weight.
【0009】前記ウォラストナイト(CaO・Si
O2 )は、結晶化温度を下げ、結晶化度を向上させるた
めの外部結晶核剤としての役割を持ち、これによって基
板の耐熱性や曲げ強度を向上させる。また基板特性のバ
ラツキを少なくすることができる。但し、ウォラストナ
イト自体の耐熱性がないため、ガラス成分とチタン酸塩
とセラミックの合計量に対して5重量%を越えると基板
の耐熱性が悪くなる。The wollastonite (CaO.Si
O 2 ) serves as an external crystal nucleating agent for lowering the crystallization temperature and improving the crystallinity, thereby improving the heat resistance and bending strength of the substrate. Further, it is possible to reduce variations in substrate characteristics. However, since the wollastonite itself does not have heat resistance, the heat resistance of the substrate is deteriorated when the content exceeds 5% by weight with respect to the total amount of the glass component, the titanate, and the ceramic.
【0010】ガラス成分について説明する。SiO2 は
ガラス形成酸化物であり、20重量%未満では軟化温度が
低くなり過ぎ、又、析出結晶相であるアノーサイト(C
aO・Al2 O3 ・2SiO2 )、セルシアン(BaO
・Al2 O3 ・2SiO2 )、チタナイト(CaO・T
iO2 ・SiO2 )の構成成分であるため、これらの結
晶相が析出し難くなる。これらの結晶相が析出すること
により、得られる基板の耐熱性及び曲げ強度が向上す
る。逆にSiO2 が50重量%を越えると、得られる基板
の熱膨張係数が低くなり過ぎる。このSiO2 は22〜45
重量%がより好ましい。The glass component will be described. SiO 2 is a glass-forming oxide, and if it is less than 20% by weight, the softening temperature becomes too low, and anorthite (C
aO ・ Al 2 O 3・ 2SiO 2 ) and celsian (BaO
・ Al 2 O 3・ 2SiO 2 ) and titanite (CaO ・ T
Since it is a constituent component of iO 2 · SiO 2, it is difficult for these crystal phases to precipitate. The precipitation of these crystal phases improves the heat resistance and bending strength of the obtained substrate. On the other hand, when the SiO 2 content exceeds 50% by weight, the coefficient of thermal expansion of the obtained substrate becomes too low. This SiO 2 is 22-45
Weight percent is more preferred.
【0011】Al2 O3 はガラス中間酸化物であり、A
l2 O3 が5重量%未満ではガラス転移点が低くなり過
ぎ、且つ結晶相の1つであるCaO・Al2 O3 ・2S
iO2 やBaO・Al2 O3 ・2SiO2 の析出が困難
となり、基板の化学的耐久性も悪くなる。逆にAl2 O
3 が20重量%を越えると液相温度が高くなり過ぎ、熔融
時に失透するため高温熔融が必要となる。このAl2 O
3 は8〜16重量%がより好ましい。Al 2 O 3 is a glass intermediate oxide, and A
If the content of l 2 O 3 is less than 5% by weight, the glass transition point becomes too low and one of the crystal phases, CaO · Al 2 O 3 · 2S.
Precipitation of iO 2 or BaO.Al 2 O 3 .2SiO 2 becomes difficult, and the chemical durability of the substrate also deteriorates. Conversely, Al 2 O
When 3 exceeds 20% by weight, the liquidus temperature becomes too high and devitrification occurs during melting, so high temperature melting is required. This Al 2 O
3 to 8 to 16% by weight is more preferable.
【0012】CaOはガラス修飾酸化物であり、結晶構
成成分である。CaOが10重量%未満では、基板の熱膨
張係数が小さくなり過ぎると共に、結晶相の1つである
CaO・Al2 O3 ・2SiO2 の析出が困難となる。
逆にCaOが20重量%を越えると、基板の熱膨張係数が
大きくなり過ぎると共に、化学的耐久性が悪化する。こ
のCaOは12〜18重量%がより好ましい。CaO is a glass-modifying oxide and a crystal constituent. The CaO is less than 10 wt%, the thermal expansion coefficient of the substrate becomes too small, which is one CaO · Al 2 O 3 · 2SiO 2 precipitation of the crystal phase becomes difficult.
On the other hand, when CaO exceeds 20% by weight, the thermal expansion coefficient of the substrate becomes too large and the chemical durability deteriorates. This CaO is more preferably 12 to 18% by weight.
【0013】BaOはガラス修飾酸化物である。ガラス
成分としてBaOを加えることにより、CaO・Al2
O3 ・2SiO2 に加えてBaO・Al2 O3 ・2Si
O2が析出するため好ましいが、10重量%を越えて加え
ると、基板の熱膨張係数が大きくなり過ぎると共に化学
的耐久性が悪化する。このBaOは8重量%以下である
ことがより好ましい。MgOはガラス修飾酸化物であ
る。10重量%を越えるとコーディエライト(2MgO・
2Al2 O3 ・5SiO2 )結晶が析出し、基板の熱膨
張係数が低くなり過ぎると共に曲げ強度が低下する。こ
のMgOは0.5 〜8重量%がより好ましい。ZnOは融
剤及び熱膨張係数調整剤として使用される。ZnOが20
重量%を越えるとガラス転移点が低下すると共に基板の
熱膨張係数も小さくなり過ぎ、耐熱性も低下する。この
ZnOは3〜17重量%がより好ましい。BaO is a glass-modified oxide. By adding BaO as a glass component, CaO.Al 2
O 3 · 2SiO 2 plus BaO · Al 2 O 3 · 2Si
Although O 2 is precipitated, it is preferable, but if it is added in excess of 10% by weight, the thermal expansion coefficient of the substrate becomes too large and the chemical durability deteriorates. The BaO content is more preferably 8% by weight or less. MgO is a glass modified oxide. If it exceeds 10% by weight, cordierite (2MgO.
2Al 2 O 3 .5SiO 2 ) crystals are deposited, the coefficient of thermal expansion of the substrate becomes too low, and the bending strength decreases. This MgO is more preferably 0.5 to 8% by weight. ZnO is used as a fluxing agent and a thermal expansion coefficient adjusting agent. ZnO is 20
If it exceeds 5% by weight, the glass transition point is lowered, the coefficient of thermal expansion of the substrate is too small, and the heat resistance is also lowered. This ZnO is more preferably 3 to 17% by weight.
【0014】TiO2 は基板の化学的耐久性を付与する
と共に、結晶相の1つであるCaO・TiO2 ・SiO
2 の構成成分である。TiO2 が5重量%未満ではCa
O・TiO2 ・SiO2 の結晶相の析出が困難となり、
逆にTiO2 が20重量%を越えると液相温度が高くなり
過ぎ、熔融時に失透するため高温熔融が必要となる。こ
のTiO2 は7〜18重量%がより好ましい。TiO 2 imparts chemical durability to the substrate and is one of the crystalline phases of CaO.TiO 2 .SiO 2.
It is a component of 2 . If TiO 2 is less than 5% by weight, Ca
It becomes difficult to precipitate the crystal phase of O ・ TiO 2・ SiO 2 ,
On the other hand, if TiO 2 exceeds 20% by weight, the liquidus temperature becomes too high and devitrification occurs during melting, so high temperature melting is required. This TiO 2 is more preferably 7 to 18% by weight.
【0015】B2 O3 はガラスの融剤としての役割を果
たすばかりでなく、セラミック基板の焼結助剤としての
役割を果たし、5重量%未満では焼結体の緻密化が困難
となる。15重量%を越えると、導体等の他材料と反応す
る。このB2 O3 は6〜13重量%がより好ましい。B 2 O 3 not only serves as a flux for glass but also as a sintering aid for the ceramic substrate, and if it is less than 5% by weight, it becomes difficult to densify the sintered body. If it exceeds 15% by weight, it reacts with other materials such as conductors. This B 2 O 3 is more preferably 6 to 13% by weight.
【0016】PbOは、融剤、熱膨張係数調整剤、及び
導体や抵抗体等の電子回路層と基板との接着を向上させ
る成分として使用される。このPbOは基板と電子回路
層との剥離を防止する効果及び電子回路層を配した基板
の反りの防止効果が大きい。PbOが4重量%未満では
基板の熱膨張係数を十分に上昇させることができず、ま
た基板と電子回路層との接着強度を十分上昇させること
が困難である。一方、PbOが25重量%を越えると、基
板の熱膨張係数が高くなり過ぎ、耐熱性も悪化し、さら
に化学的耐久性も悪化する。このPbOは7〜20重量%
がより好ましい。PbO is used as a fluxing agent, a thermal expansion coefficient adjusting agent, and a component for improving the adhesion between an electronic circuit layer such as a conductor and a resistor and a substrate. This PbO has a large effect of preventing peeling between the substrate and the electronic circuit layer and a large effect of preventing warpage of the substrate on which the electronic circuit layer is arranged. If PbO is less than 4% by weight, the thermal expansion coefficient of the substrate cannot be sufficiently increased, and it is difficult to sufficiently increase the adhesive strength between the substrate and the electronic circuit layer. On the other hand, if the PbO content exceeds 25% by weight, the coefficient of thermal expansion of the substrate becomes too high, heat resistance deteriorates, and chemical durability also deteriorates. This PbO is 7-20% by weight
Is more preferable.
【0017】本発明にかかるセラミック基板用組成物
は、例えば次のようにして製造する。先ず、ガラス組成
が酸化物換算重量%で、SiO2 が20〜50重量%、Al
2 O3が5〜20重量%、CaOが10〜20重量%、BaO
が0〜10重量%、MgOが0〜10重量%、ZnOが0〜
20重量%、TiO2 が5〜20重量%、B2 O3 が5〜15
重量%、PbOが4〜25重量%となるように、各原料粉
末を秤量、混合し、これを熔融した後、冷却してガラス
フレークにする。そしてこのガラスフレークからなるガ
ラス成分が60〜85重量%、CaTiO3 、SrTi
O3 、MgTiO3 、又はこれらチタン酸塩の固溶体の
うちの少なくとも1種からなるチタン酸塩が5〜20重量
%、アルミナ、ジルコニア、ジルコン、チタニア、マグ
ネシア、ムライトのうちの少なくとも1種からなるセラ
ミックが10〜35重量%の比率になるように、ガラスフレ
ークとチタン酸塩粉末とセラミック粉末を秤量し、また
必要に応じて、ガラスフレークとチタン酸塩粉末とセラ
ミック粉末の合計量に対して5重量%以下の含有量とな
るように、ウォラストナイト粉末を加えて、粉砕、混合
する。これによって本発明のセラミック基板用組成物を
得ることができる。The composition for ceramic substrate according to the present invention is produced, for example, as follows. First, the glass composition is oxide conversion weight%, SiO 2 is 20 to 50 weight%, Al
2 O 3 5-20 wt%, CaO 10-20 wt%, BaO
Is 0 to 10% by weight, MgO is 0 to 10% by weight, ZnO is 0 to
20 wt%, TiO 2 5-20 wt%, B 2 O 3 5-15
The raw material powders are weighed and mixed so that the weight% and PbO are 4 to 25% by weight, melted, and then cooled to form glass flakes. And the glass component consisting of this glass flake is 60 to 85% by weight, CaTiO 3 , SrTi
5 to 20% by weight of titanate composed of O 3 , MgTiO 3 or a solid solution of these titanates, and at least one of alumina, zirconia, zircon, titania, magnesia and mullite. Glass flake, titanate powder and ceramic powder are weighed out so that the ratio of ceramic is 10 to 35% by weight, and if necessary, based on the total amount of glass flake, titanate powder and ceramic powder. Wollastonite powder is added, pulverized and mixed so that the content becomes 5% by weight or less. Thereby, the composition for ceramic substrate of the present invention can be obtained.
【0018】そしてこの本発明のセラミック基板用組成
物からの多層基板の製造は、例えば次にようにして行
う。先ず、上記で得た本発明のセラミック基板用組成物
に対して、従来からの常法として適当なバインダーや可
塑剤、溶剤を加え、混練してスラリーを作製し、次にこ
のスラリーをドクターブレード法等によってグリーンシ
ートとし、次にこのグリーンシートに電子回路層用材料
を印刷し、次に印刷されたグリーンシートを複数枚重ね
て焼成する。これによって電子回路層が多層に形成され
た多層基板が得られる。The production of a multilayer substrate from the composition for ceramic substrate of the present invention is carried out, for example, as follows. First, to the composition for a ceramic substrate of the present invention obtained above, a binder, a plasticizer, and a solvent suitable as a conventional method are added and kneaded to prepare a slurry, and this slurry is then doctor blade. A green sheet is formed by a method or the like, then the electronic circuit layer material is printed on this green sheet, and then a plurality of the printed green sheets are stacked and fired. As a result, a multi-layer substrate in which electronic circuit layers are formed in multiple layers can be obtained.
【0019】[0019]
【作用効果】上記請求項1に記載のセラミック基板用組
成物によれば、該セラミック基板用組成物を用いて多層
基板を形成することにより、Ag、Ag−Pd、Au、
Cu等の比較的融点の低い低抵抗導体を多層基板の内部
電極として、比較的低い温度(約800 〜1000℃)で同時
焼成することができ、また電子回路を多層に形成する多
層配線基板として要求される体積固有抵抗、誘電率、誘
電正接、絶縁破壊強度、曲げ強度等の一般的特性を満足
し、特に、高周波用基板の品質の安定性に必要な小さな
TCC(±0〜±50 ppm/℃)に抑えることができ、且
つ焼成後の多層配線基板に反り、電子回路の剥離が生じ
ないセラミック多層基板を得ることができる。また上記
請求項2に記載のセラミック基板用組成物によれば、前
記請求項1に記載の構成による作用効果に加えて、ガラ
ス成分とチタン酸塩とセラミックの合計量に対して5重
量%以下のウォラストナイトを含むようにすることで、
得られるセラミック基板の特性を一層向上させることが
できる。また上記請求項3に記載のセラミック基板用組
成物によれば、前記請求項1または2に記載の構成によ
る作用効果に加えて、チタン酸塩が、CaTiO3 、S
rTiO3 、MgTiO3 、又はこれらチタン酸塩の固
溶体のうちの少なくとも1種からなるので、これらのチ
タン酸塩のもつ負のTCC特性により、正のTCC特性
を持つガラス成分と混合し焼結することによって、確実
に基板のTCCを±0〜±50 ppm/℃以内に調整でき
る。また上記請求項4に記載のセラミック基板用組成物
によれば、前記請求項1乃至3のいずれかに記載の構成
による作用効果に加えて、セラミックが、アルミナ、ジ
ルコニア、ジルコン、チタニア、マグネシア、ムライト
のうちの少なくとも1種からなるので、基板の熱膨張係
数調整や耐熱性付与に寄与することができるのみなら
ず、基板の収縮率を確実にAg、Ag−Pd、Au、C
u等の導体材料やRuO2 等の抵抗体材料と一致させる
ことができる。According to the composition for a ceramic substrate of claim 1, Ag, Ag-Pd, Au, and Ag, Ag-Pd, Au, are formed by forming a multilayer substrate using the composition for a ceramic substrate.
A low resistance conductor such as Cu having a relatively low melting point can be co-fired at a relatively low temperature (about 800 to 1000 ° C) as an internal electrode of a multi-layer substrate, and as a multi-layer wiring substrate for forming electronic circuits in multiple layers. Satisfies general characteristics such as required volume resistivity, dielectric constant, dielectric loss tangent, dielectric breakdown strength, bending strength, etc., and especially small TCC (± 0 to ± 50 ppm) required for quality stability of high frequency board. It is possible to obtain a ceramic multilayer substrate which can be suppressed to / ° C.) and which does not warp the multilayer wiring substrate after firing and peel off the electronic circuit. Further, according to the composition for a ceramic substrate according to claim 2, in addition to the effect of the configuration according to claim 1, 5% by weight or less based on the total amount of the glass component, the titanate, and the ceramic. By including Wollastonite,
The characteristics of the obtained ceramic substrate can be further improved. Further, according to the composition for a ceramic substrate of claim 3, in addition to the effect of the structure of claim 1 or 2, the titanate is CaTiO 3 , S or S.
rTiO 3, MgTiO 3, or so it composed of at least one of a solid solution of these titanates, by the negative TCC characteristics of these titanates, sintered mixed with a glass component having a positive TCC properties This ensures that the TCC of the substrate can be adjusted within ± 0 to ± 50 ppm / ° C. According to the composition for a ceramic substrate according to claim 4, in addition to the effect of the configuration according to any one of claims 1 to 3, the ceramic is alumina, zirconia, zircon, titania, magnesia, Since it is composed of at least one of mullite, it can not only contribute to the adjustment of the thermal expansion coefficient of the substrate and the provision of heat resistance, but also can reliably reduce the shrinkage rate of the substrate from Ag, Ag-Pd, Au, C.
It can be matched with a conductor material such as u or a resistor material such as RuO 2 .
【0020】[0020]
【実施例】以下に本発明の実施例について説明する。ガ
ラス組成が重量%でSiO2 が26、Al2 O3 が12、C
aOが15、MgOが1、ZnOが11、TiO2 が10、B
2 O3 が9、PbOが16になるように各原料を秤量、混
合し、白金炉を使用して1450℃で2時間、白金の撹拌棒
にて連続撹拌しながら熔融し、水冷ロール上に流出さ
せ、ガラスフレークを作製した。次にこのガラスフレー
ク、チタン酸塩としてCaTiO3 粉末、セラミックと
してアルミナ粉末、外部核剤としてウォラストナイト
(CaO・SiO2 )粉末をそれぞれ72重量部、12重量
部、16重量部、1重量部になるよう秤量し、ボールミル
にて24時間粉砕、混合し、本発明の組成物を得た。この
粉砕、混合した組成物をペレッターを使用して成形後、
900 ℃にて15分間焼成し、JIS−R1601に準じ曲げ強
度(3点曲げ)を測定したところ、22kgf/mm2 であっ
た。また、同様の方法で作製した焼結体サンプルの熱膨
張係数を、TMA(熱機械分析装置)を用いて測定した
ところ、67×10-7/℃であった。EXAMPLES Examples of the present invention will be described below. Glass composition is wt%, SiO 2 is 26, Al 2 O 3 is 12, C
aO = 15, MgO = 1, ZnO = 11, TiO 2 = 10, B
Weigh and mix the raw materials so that 2 O 3 is 9 and PbO is 16, and use a platinum furnace to melt at 1450 ° C. for 2 hours with continuous stirring using a platinum stirring rod, and place on a water-cooled roll. The glass flakes were made to flow out. Next, 72 parts by weight, 12 parts by weight, 16 parts by weight and 1 part by weight of the glass flakes, CaTiO 3 powder as a titanate, alumina powder as a ceramic, and wollastonite (CaO · SiO 2 ) powder as an external nucleating agent, respectively. Were weighed and pulverized with a ball mill for 24 hours and mixed to obtain the composition of the present invention. After molding the crushed and mixed composition using a pelletizer,
It was 22 kgf / mm 2 when the bending strength (three-point bending) was measured according to JIS-R1601 by baking at 900 ° C. for 15 minutes. The coefficient of thermal expansion of a sintered body sample manufactured by the same method was measured using TMA (thermomechanical analyzer) and found to be 67 × 10 −7 / ° C.
【0021】またこの粉砕、混合した組成物に種々のバ
インダーや可塑剤、溶剤を添加し、混練してスラリーを
作製した。このスラリーをドクターブレード法により、
厚み約0.1 mmのグリーンシートとした。そしてこのグリ
ーンシートを20層重ねて熱圧着後、900 ℃にて15分間焼
成した。焼成したシートの各種特性を測定したところ、
体積固有抵抗が1015Ω・cm、誘電率が16、誘電正接が4
×10-4、絶縁破壊強度が780kV /cm、TCCが25〜85℃
で+5ppm /℃であった。また前記グリーンシートにA
g電極を印刷し、このグリーンシートを30枚重ねて熱圧
着させ、900 ℃にて15分間焼成したところ、反りや剥離
は全く観察されなかった。結果を表1のに示す。本発
明の他の組成による組成物を用いて前記の場合と同様の
方法で試料を作製し、物性測定した各結果を〜に示
す。また比較例として、本発明の組成物の範囲に入らな
い組成物について上記と同様にして測定した結果を表2
に示す。尚、表2において「*」の印は、その成分が本
発明の組成の範囲外となっていることを示している。Further, various binders, plasticizers and solvents were added to the crushed and mixed composition and kneaded to prepare a slurry. This slurry by the doctor blade method,
A green sheet with a thickness of about 0.1 mm was used. Then, 20 layers of this green sheet were stacked and thermocompression bonded, and then baked at 900 ° C. for 15 minutes. When various characteristics of the fired sheet were measured,
Volume resistivity 10 15 Ω · cm, dielectric constant 16 and dielectric loss tangent 4
× 10 -4 , dielectric breakdown strength 780 kV / cm, TCC 25 ~ 85 ℃
Was +5 ppm / ° C. In addition, A on the green sheet
When the g electrode was printed, thirty sheets of this green sheet were stacked and thermocompression-bonded, and baked at 900 ° C. for 15 minutes, no warpage or peeling was observed. The results are shown in Table 1. Samples were prepared by using the composition according to the other composition of the present invention in the same manner as in the above case, and the results of measuring the physical properties are shown in. In addition, as a comparative example, the results of the measurement in the same manner as above for the compositions not falling within the range of the composition of the present invention are shown in Table 2.
Shown in. In Table 2, the mark "*" indicates that the component is out of the composition range of the present invention.
【0022】[0022]
【表1】 [Table 1]
【0023】[0023]
【表2】 [Table 2]
【0024】表1、表2から明らかなように、本発明の
範囲にあるものの特性は、いずれもTCCが±0〜±50
ppm/℃の範囲内にあり、且つ基板の反り、剥離(デラ
ミネーション)も生じない。また他の特性も良好であ
る。一方、本発明の範囲外にあるものは、いずれも少な
くともTCCの値が悪いか、基板に反りを生じるか、剥
離(デラミネーション)を生じている。As is clear from Tables 1 and 2, the characteristics of the materials within the scope of the present invention are TCC of ± 0 to ± 50.
It is in the range of ppm / ° C., and the substrate does not warp or peel (delamination). Other properties are also good. On the other hand, in all cases outside the scope of the present invention, at least the value of TCC is bad, the substrate is warped, or peeling (delamination) occurs.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 H05K 3/46 T 6921−4E H 6921−4E ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI Technical indication H05K 3/46 T 6921-4E H 6921-4E
Claims (4)
20重量%、セラミックを10〜35重量%、含むことを特徴
とするセラミック基板用組成物。1. In terms of oxides, SiO 2 is 20 to 50% by weight, Al 2 O 3 is 5 to 20% by weight, CaO is 10 to 20% by weight, BaO is 0 to 10% by weight, and MgO is 0 to 10% by weight, ZnO 0 to 20% by weight, TiO 2 5 to 20% by weight, B 2 O 3 5 to 15% by weight, PbO 4 to 25% by weight, and a glass component of 60 to 85% by weight. 5% by weight, titanate
A composition for a ceramic substrate comprising 20% by weight and 10 to 35% by weight of ceramic.
合計量に対して5重量%以下のウォラストナイトを含む
請求項1に記載のセラミック基板用組成物。2. The composition for a ceramic substrate according to claim 1, which contains 5% by weight or less of wollastonite with respect to the total amount of the glass component, the titanate and the ceramic.
O3 、MgTiO3、又はこれらチタン酸塩の固溶体の
うちの少なくとも1種からなる請求項1または2に記載
のセラミック基板用組成物。3. The titanate is CaTiO 3 , SrTi.
The composition for a ceramic substrate according to claim 1 or 2, comprising O 3 , MgTiO 3 , or at least one solid solution of these titanates.
ジルコン、チタニア、マグネシア、ムライトのうちの少
なくとも1種からなる請求項1乃至3の何れかに記載の
セラミック基板用組成物。4. The ceramic is alumina, zirconia,
The composition for a ceramic substrate according to claim 1, comprising at least one of zircon, titania, magnesia, and mullite.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP35241693A JP3315233B2 (en) | 1993-12-27 | 1993-12-27 | Composition for ceramic substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP35241693A JP3315233B2 (en) | 1993-12-27 | 1993-12-27 | Composition for ceramic substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH07187766A true JPH07187766A (en) | 1995-07-25 |
JP3315233B2 JP3315233B2 (en) | 2002-08-19 |
Family
ID=18423932
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP35241693A Expired - Fee Related JP3315233B2 (en) | 1993-12-27 | 1993-12-27 | Composition for ceramic substrate |
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Country | Link |
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JP (1) | JP3315233B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100310910B1 (en) * | 1998-12-30 | 2002-02-28 | 임효빈 | Glass-Ceramic Green Tape Composition for Low Temperature Simultaneous Plastic Substrates |
CN100415678C (en) * | 2006-03-27 | 2008-09-03 | 浙江大学 | Micro-wave dielectric ceramic with low dielectric coefficient |
-
1993
- 1993-12-27 JP JP35241693A patent/JP3315233B2/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100310910B1 (en) * | 1998-12-30 | 2002-02-28 | 임효빈 | Glass-Ceramic Green Tape Composition for Low Temperature Simultaneous Plastic Substrates |
CN100415678C (en) * | 2006-03-27 | 2008-09-03 | 浙江大学 | Micro-wave dielectric ceramic with low dielectric coefficient |
Also Published As
Publication number | Publication date |
---|---|
JP3315233B2 (en) | 2002-08-19 |
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