JPH07185875A - Material processing method by pulse laser - Google Patents
Material processing method by pulse laserInfo
- Publication number
- JPH07185875A JPH07185875A JP5354917A JP35491793A JPH07185875A JP H07185875 A JPH07185875 A JP H07185875A JP 5354917 A JP5354917 A JP 5354917A JP 35491793 A JP35491793 A JP 35491793A JP H07185875 A JPH07185875 A JP H07185875A
- Authority
- JP
- Japan
- Prior art keywords
- liquid
- processing
- pulse laser
- state
- several
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Laser Beam Processing (AREA)
- Lasers (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、パルスレーザを利用し
た材料加工方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a material processing method using a pulse laser.
【0002】[0002]
【従来の技術】エキシマレーザのような短波長のパルス
レーザを、ポリマーなどの高分子材料の表面に照射し
て、所要の形状に加工することは既によく知られてい
る。このようなパルスレーザを照射すると、その照射部
分が瞬間的に分解、飛散する。この加工法はCO2レー
ザ、YAGレーザなどによる熱加工とは異なり、照射周
囲への熱拡散が極めて少なく、加工エッジをシャープに
加工することができ、また短波長であるため、微細加工
が可能であるといった、各種の利点を備えている。2. Description of the Related Art It is already well known to irradiate a surface of a polymer material such as a polymer with a pulsed laser having a short wavelength such as an excimer laser to form it into a desired shape. When such a pulsed laser is irradiated, the irradiated portion is instantaneously decomposed and scattered. Unlike the thermal processing using CO2 laser, YAG laser, etc., this processing method has extremely little heat diffusion to the irradiation surroundings, can process the processing edge sharply, and since it has a short wavelength, it enables fine processing. It has various advantages such as
【0003】この加工方法は、図1に示すようにパルス
レーザの光路に加工形状のマスク1を配置し、このマス
ク1を通過したパルスレーザを、適当な光学系2により
材料に適した照射エネルギー密度、加工寸法に調整し、
材料3に照射して行う。In this processing method, a mask 1 having a processed shape is arranged in the optical path of a pulse laser as shown in FIG. 1, and the pulse laser passing through this mask 1 is irradiated by a suitable optical system 2 with irradiation energy suitable for a material. Adjust the density and processing dimensions,
Irradiating the material 3 is performed.
【0004】しかしこのような加工方法では、材料3の
加工部位4の周囲にデブリスと呼ばれる加工カス5が堆
積して付着することがある。このように付着した加工カ
スを加工後に除去することは、材料によっても異なるが
通常は困難である。However, in such a processing method, a processing dust 5 called debris may be deposited and attached around the processing portion 4 of the material 3. It is usually difficult to remove the processing dust attached in this manner after processing, although it depends on the material.
【0005】一般的には加工の最中に加工部位4にヘリ
ウムガスをノズルによって吹き付けて、その加工カスを
吹き飛ばすことが行われているが、これによっても確実
に加工カスを除去することはできないし、またこのよう
なガスを使用することは、加工コストの増大の原因とな
る。Generally, during processing, helium gas is blown to the processing portion 4 by a nozzle to blow off the processing dust, but this also cannot reliably remove the processing dust. However, the use of such a gas causes an increase in processing cost.
【0006】[0006]
【発明が解決しようとする課題】本発明は、パルスレー
ザの照射による加工に際し、その加工によって生じる加
工カスを簡単に除去することを目的とする。SUMMARY OF THE INVENTION It is an object of the present invention to easily remove the processing dust generated during the processing by irradiation with a pulse laser.
【0007】[0007]
【課題を解決するための手段】本発明は、加工対象の材
料の表面に、液体の薄層を形成した状態で、パルスレー
ザを照射して加工することを特徴とする。The present invention is characterized in that a thin layer of a liquid is formed on the surface of a material to be processed, and the material is processed by irradiating a pulse laser.
【0008】[0008]
【作用】加工の際、加工部位の周囲は液体で覆われてい
ることにより、加工によって生じた加工カスは、その液
体の表面を浮上するか、またはその液体中を浮遊もしく
は沈積し、材料の表面に直接付着することはない。加工
後にその液体を洗い流すことによって、加工カスは簡単
に材料の表面から除去することができる。In the processing, since the periphery of the processed portion is covered with the liquid, the processing dust generated by the processing floats on the surface of the liquid or floats or deposits in the liquid, and It does not adhere directly to the surface. By removing the liquid after processing, the processing dust can be easily removed from the surface of the material.
【0009】[0009]
【実施例】本発明の実施例方法を図を参照して説明す
る。本発明にしたがい、加工の開始にさきだって、図2
に示すように、材料3(たとえばポリイミドフィルム)
の表面に、液体6を、数μm〜数百μm程度に薄く塗布
しておく。なお液体6はパルスレーザに対して透明のも
のであっても、または不透明のものであってもよい。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A method according to an embodiment of the present invention will be described with reference to the drawings. According to the present invention, before starting the processing, as shown in FIG.
Material 3 (eg polyimide film) as shown in
The liquid 6 is thinly applied to the surface of 1 to about several μm to several hundred μm. The liquid 6 may be transparent to the pulse laser or opaque.
【0010】液体6としては、材料3の表面に対する濡
れ性を考慮して適当に選択すればよい。たとえば液体と
して水を用いる場合、水のみでもよいが、脂肪酸石鹸水
のような界面活性剤を添加してもよい。このような界面
活性剤を添加することにより液体6の表面張力が小さく
なり、その塗布層を極力薄くすることができる。塗布層
を厚くするとパルスレーザの損失が大きくなるため、加
工効率が悪くなるとともに、加工後除去する際に手間が
かかり、得策ではない。The liquid 6 may be appropriately selected in consideration of the wettability of the material 3 with respect to the surface. For example, when water is used as the liquid, only water may be used, but a surfactant such as fatty acid soap water may be added. By adding such a surfactant, the surface tension of the liquid 6 becomes small, and the coating layer can be made as thin as possible. If the coating layer is made thicker, the loss of the pulsed laser will increase, resulting in poor processing efficiency and time-consuming removal after processing, which is not a good idea.
【0011】このように液体6を薄く塗布した状態でパ
ルスレーザを照射すると、その照射の当初において、照
射領域の表面の液体は、数ショットのパルスレーザで飛
散してしまう。しかし加工部位4の周囲の表面には液体
6が残っている状態となる。When the pulse laser is applied in a state where the liquid 6 is applied thinly as described above, the liquid on the surface of the irradiation region is scattered by several shots of the pulse laser at the beginning of the irradiation. However, the liquid 6 remains on the surface around the processed portion 4.
【0012】ここで加工カスが飛散してくると、その加
工カスはこのように残っている液体6の表面を浮上し、
または液体6中に浮遊、または堆積することにより、材
料3の表面に直接付着するようなことはない。加工後に
材料3をエタノールまたは中性洗剤で洗浄する。加工カ
スは材料3に直接付着していないことにより、加工カス
は液体6とともに材料3の表面から簡単に除去される。When the processing dust scatters here, the processing dust floats on the surface of the liquid 6 thus remaining,
Alternatively, it does not directly adhere to the surface of the material 3 by floating or accumulating in the liquid 6. After processing, the material 3 is washed with ethanol or a neutral detergent. Since the processing dust is not directly attached to the material 3, the processing dust is easily removed from the surface of the material 3 together with the liquid 6.
【0013】なお使用する液体6として液体窒素、アル
コールなどのような揮発性の高いものを使用した場合、
あるいは加工に要する時間が長いことによって液体が蒸
発してしまうような場合は、その液体を補充する目的で
加工部位の周囲から液体を少量ずつ流しながら加工する
ようにしてもよい。この楊合、加工部位を冷却する効果
が加わり、さらに熱影響がないシャープな加工が可能と
なり、都合がよい。When liquid 6 having a high volatility such as liquid nitrogen or alcohol is used,
Alternatively, when the liquid evaporates due to a long processing time, the liquid may be processed while flowing it little by little from the periphery of the processing site for the purpose of supplementing the liquid. This joining and cooling effect of the processed portion are added, and it is possible to perform sharp processing without thermal influence, which is convenient.
【0014】[0014]
【発明の効果】以上説明したように本発明によれば、パ
ルスレーザにより材料を加工する際に生じる加工カス
を、単に材料の表面に液体を薄く塗布しておくだけで、
加工後に簡単にしかも確実に除去することができる効果
を奏する。As described above, according to the present invention, processing dust generated when a material is processed by a pulse laser is simply applied thinly on the surface of the material,
The effect that it can be removed easily and surely after processing is achieved.
【図1】本発明の実施例方法を示す加工配置図である。FIG. 1 is a processing layout view showing an embodiment method of the present invention.
【図2】液体を塗布した材料の拡大断面図である。FIG. 2 is an enlarged cross-sectional view of a material coated with a liquid.
3 材料 6 液体 3 Material 6 Liquid
───────────────────────────────────────────────────── フロントページの続き (72)発明者 出野 愼一 京都市右京区梅津高畝町47番地 日新電機 株式会社内 (72)発明者 川北 有 京都市右京区梅津高畝町47番地 日新電機 株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Shinichi Deno 47 Umezu Takanune-cho, Ukyo-ku, Kyoto City Nissin Electric Co., Ltd.
Claims (1)
形成した状態で、パルスレーザを照射して加工すること
を特徴とするパルスレーザによる材料加工方法。1. A material processing method using a pulse laser, which comprises irradiating a material to be processed with a pulse laser in a state where a thin layer of a liquid is formed on the surface of the material to be processed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5354917A JPH07185875A (en) | 1993-12-24 | 1993-12-24 | Material processing method by pulse laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5354917A JPH07185875A (en) | 1993-12-24 | 1993-12-24 | Material processing method by pulse laser |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH07185875A true JPH07185875A (en) | 1995-07-25 |
Family
ID=18440783
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5354917A Pending JPH07185875A (en) | 1993-12-24 | 1993-12-24 | Material processing method by pulse laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH07185875A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2409998A (en) * | 2004-01-13 | 2005-07-20 | Xsil Technology Ltd | Laser machining using a surfactant film |
CN100363144C (en) * | 2004-11-05 | 2008-01-23 | 中国航空工业第一集团公司北京航空制造工程研究所 | Method of application of activator in use for laser welding titanium alloy |
JP2008078581A (en) * | 2006-09-25 | 2008-04-03 | Disco Abrasive Syst Ltd | Method for processing wafer laser |
JP2008229722A (en) * | 2008-03-07 | 2008-10-02 | Semiconductor Energy Lab Co Ltd | Laser marking method and laser marking device |
JP2008238260A (en) * | 2007-03-29 | 2008-10-09 | Toshiba Corp | Laser surface modification apparatus and method thereof |
US8449806B2 (en) | 2002-09-05 | 2013-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Laser processing apparatus |
US9242312B2 (en) | 2003-06-06 | 2016-01-26 | Electro Scientific Industries, Inc. | Laser machining using a surfactant film |
WO2019117129A1 (en) * | 2017-12-12 | 2019-06-20 | 株式会社村田製作所 | Secondary cell manufacturing method |
-
1993
- 1993-12-24 JP JP5354917A patent/JPH07185875A/en active Pending
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8449806B2 (en) | 2002-09-05 | 2013-05-28 | Semiconductor Energy Laboratory Co., Ltd. | Laser processing apparatus |
US9242312B2 (en) | 2003-06-06 | 2016-01-26 | Electro Scientific Industries, Inc. | Laser machining using a surfactant film |
GB2409998A (en) * | 2004-01-13 | 2005-07-20 | Xsil Technology Ltd | Laser machining using a surfactant film |
GB2409998B (en) * | 2004-01-13 | 2007-07-11 | Xsil Technology Ltd | Laser machining using a surfactant film |
CN100363144C (en) * | 2004-11-05 | 2008-01-23 | 中国航空工业第一集团公司北京航空制造工程研究所 | Method of application of activator in use for laser welding titanium alloy |
JP2008078581A (en) * | 2006-09-25 | 2008-04-03 | Disco Abrasive Syst Ltd | Method for processing wafer laser |
JP2008238260A (en) * | 2007-03-29 | 2008-10-09 | Toshiba Corp | Laser surface modification apparatus and method thereof |
JP2008229722A (en) * | 2008-03-07 | 2008-10-02 | Semiconductor Energy Lab Co Ltd | Laser marking method and laser marking device |
WO2019117129A1 (en) * | 2017-12-12 | 2019-06-20 | 株式会社村田製作所 | Secondary cell manufacturing method |
JPWO2019117129A1 (en) * | 2017-12-12 | 2020-12-03 | 株式会社村田製作所 | How to manufacture a secondary battery |
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