JPH0714814A - Ultrasonic cleaning method and device - Google Patents
Ultrasonic cleaning method and deviceInfo
- Publication number
- JPH0714814A JPH0714814A JP15717793A JP15717793A JPH0714814A JP H0714814 A JPH0714814 A JP H0714814A JP 15717793 A JP15717793 A JP 15717793A JP 15717793 A JP15717793 A JP 15717793A JP H0714814 A JPH0714814 A JP H0714814A
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- ultrasonic
- vibrator
- cleaning liquid
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Cleaning By Liquid Or Steam (AREA)
- Apparatuses For Generation Of Mechanical Vibrations (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、超音波洗浄に関し、特
に半導体基板等高清浄度を要求する被洗浄物用の超音波
洗浄に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to ultrasonic cleaning, and more particularly to ultrasonic cleaning for objects to be cleaned which require high cleanliness such as semiconductor substrates.
【０００２】[0002]
【従来の技術】従来、半導体基板の超音波洗浄には、洗
浄液を満たした石英製洗浄槽に超音波振動子が固定され
た超音波洗浄装置を用いていた。このような構成の超音
波洗浄装置においては、洗浄液中に定在波が発生する。
このため、音圧変化の極小点（節）では、洗浄効果が低
下し洗浄むらが発生する。2. Description of the Related Art Conventionally, for ultrasonic cleaning of a semiconductor substrate, an ultrasonic cleaning device in which an ultrasonic vibrator is fixed in a quartz cleaning tank filled with a cleaning liquid has been used. In the ultrasonic cleaning device having such a structure, a standing wave is generated in the cleaning liquid.
For this reason, at the minimum point (node) of the sound pressure change, the cleaning effect is reduced and cleaning unevenness occurs.
【０００３】定在波の発生を低減する方法として、多周
波交互照射方式や多振動子異方向照射方式が提案されて
いる。多周波交互照射方式は、振動周波数の異なる複数
の振動子を備え、それぞれの振動子から交互に超音波を
照射する方式である。また、多振動子異方向照射方式
は、複数の振動子を備え、異なる方向から同時に超音波
を照射する方式である。このような方式では、被洗浄物
の一点が常に定在波の節になるということがないため、
洗浄むらの発生を低減することができる。As a method of reducing the generation of standing waves, a multi-frequency alternating irradiation method and a multi-vibrator different direction irradiation method have been proposed. The multi-frequency alternating irradiation method is a method that includes a plurality of vibrators having different vibration frequencies and alternately radiates ultrasonic waves from the respective vibrators. The multi-transducer different-direction irradiation method is a method that includes a plurality of vibrators and irradiates ultrasonic waves simultaneously from different directions. In such a method, one point of the object to be cleaned does not always become a node of the standing wave,
Occurrence of uneven cleaning can be reduced.
【０００４】また、超音波の周波数を高くし、定在波の
波長を短くして洗浄むらを低減することも可能である。It is also possible to increase the frequency of ultrasonic waves and shorten the wavelength of standing waves to reduce uneven cleaning.
【０００５】[0005]
【発明が解決しようとする課題】多周波交互照射方式や
多振動子異方向照射方式により、洗浄むらの発生を低減
することができる。しかし、洗浄液の液温、液深、液組
成、被洗浄物の形状、位置等制御すべきパラメータが多
く、最適な洗浄条件を常に維持するのは困難である。The multi-frequency alternating irradiation method and the multi-vibrator different-direction irradiation method can reduce the occurrence of uneven cleaning. However, there are many parameters to be controlled, such as the temperature of the cleaning liquid, the liquid depth, the liquid composition, the shape and position of the object to be cleaned, and it is difficult to always maintain the optimum cleaning conditions.
【０００６】また、より周波数の高い超音波を利用する
方法では、節と節との間隔を短くすることが可能であ
る。しかし、振動周波数をメガヘルツ（ＭＨｚ）のオー
ダまで高くしても定在波の節と節との間隔はミリ（ｍ
ｍ）のオーダである。従って、サブミクロンオーダのパ
ターンが形成された半導体基板の洗浄には十分ではな
い。Further, in the method of utilizing ultrasonic waves of higher frequency, it is possible to shorten the interval between the nodes. However, even if the vibration frequency is increased to the order of megahertz (MHz), the spacing between the nodes of the standing wave is millimeter (m).
It is the order of m). Therefore, it is not sufficient for cleaning a semiconductor substrate having a sub-micron order pattern.
【０００７】本発明の目的は、洗浄むらが発生しないよ
うに均一に洗浄することが可能な超音波洗浄技術を提供
することである。An object of the present invention is to provide an ultrasonic cleaning technique capable of uniform cleaning so that cleaning unevenness does not occur.
【０００８】[0008]
【課題を解決するための手段】本発明の超音波洗浄方法
は、被洗浄物を洗浄液中に浸し、超音波振動子から洗浄
液中に放射された超音波を前記被洗浄物に照射し、洗浄
を行う超音波洗浄方法において、超音波振動子を洗浄液
中で移動させながら洗浄を行うことを特徴とする。According to the ultrasonic cleaning method of the present invention, an object to be cleaned is immersed in a cleaning liquid, and the ultrasonic waves emitted from the ultrasonic vibrator into the cleaning liquid are applied to the object to be cleaned. In the ultrasonic cleaning method of performing the cleaning, the cleaning is performed while moving the ultrasonic vibrator in the cleaning liquid.
【０００９】本発明の超音波洗浄装置は、洗浄槽に洗浄
液を満たし、洗浄液中に被洗浄物を浸漬し、洗浄液中に
配置された振動子から放射された超音波を前記被洗浄物
に照射して洗浄を行う超音波洗浄装置において、前記振
動子と接続され、前記振動子を洗浄液中で移動させるた
めの駆動手段を有する。In the ultrasonic cleaning apparatus of the present invention, the cleaning tank is filled with the cleaning liquid, the object to be cleaned is immersed in the cleaning liquid, and the ultrasonic wave emitted from the vibrator arranged in the cleaning liquid is applied to the object to be cleaned. In the ultrasonic cleaning device for cleaning by means of the above-mentioned method, there is provided a driving means that is connected to the vibrator and moves the vibrator in the cleaning liquid.
【００１０】また、本発明の他の超音波洗浄装置は、前
記振動子と駆動手段を複数組有し、それぞれの振動子
は、超音波の放射方向が異なるように配置されている。Further, another ultrasonic cleaning apparatus of the present invention has a plurality of sets of the vibrator and the driving means, and the vibrators are arranged so that the emission directions of the ultrasonic waves are different.
【００１１】[0011]
【作用】洗浄液中で、超音波振動子を移動させることに
より、洗浄液中に生じた定在波の腹及び節の位置を変化
させることができる。そのため、被洗浄物表面の特定箇
所が常に定在波の節になるということがなくなり、洗浄
むらをなくすことが可能となる。By moving the ultrasonic oscillator in the cleaning liquid, the positions of the antinodes and nodes of the standing wave generated in the cleaning liquid can be changed. Therefore, a specific portion of the surface of the object to be cleaned does not always become a node of the standing wave, and it is possible to eliminate uneven cleaning.
【００１２】さらに、超音波振動子を複数個設け、異な
る方向から超音波を照射することにより、洗浄効果の均
一性を向上させることができる。Furthermore, by providing a plurality of ultrasonic vibrators and irradiating ultrasonic waves from different directions, the uniformity of the cleaning effect can be improved.
【００１３】[0013]
【実施例】以下、半導体基板を搭載したキャリアを洗浄
液に浸して超音波洗浄する場合を例に、本発明の実施例
について説明する。図１は、本発明の実施例による洗浄
装置を示す。EXAMPLE An example of the present invention will be described below by exemplifying a case where a carrier on which a semiconductor substrate is mounted is dipped in a cleaning liquid and ultrasonically cleaned. FIG. 1 shows a cleaning device according to an embodiment of the present invention.
【００１４】図１（Ａ）は、洗浄装置を側面から見た断
面図、図１（Ｂ）は、長さ方向から見た断面図を示す。
石英製の洗浄槽１の底部に洗浄層に触れないように石英
製の板状振動子２が配置されている。図には、１個の板
状の振動子を示しているが、細長い板状の振動子を複数
個配置してもよい。振動子２の一端は、発振子６に固定
されている。発振子６自体は、洗浄液１１に触れないよ
うに石英管７内に設置されている。FIG. 1 (A) is a sectional view of the cleaning apparatus as seen from the side, and FIG. 1 (B) is a sectional view as seen from the length direction.
A quartz plate-shaped vibrator 2 is arranged at the bottom of a quartz cleaning tank 1 so as not to touch the cleaning layer. Although one plate-shaped vibrator is shown in the figure, a plurality of elongated plate-shaped vibrators may be arranged. One end of the oscillator 2 is fixed to the oscillator 6. The oscillator 6 itself is installed in the quartz tube 7 so as not to come into contact with the cleaning liquid 11.
【００１５】石英管７は洗浄槽１の底面及び側面に沿っ
て洗浄液１１の液面上に引き出され駆動機構８に接続さ
れている。発振子６に高周波電圧を供給するための出力
ケーブル１０は、石英管７内を通して洗浄液１１の外部
に取り出され、発振器９に接続されている。The quartz tube 7 is drawn on the surface of the cleaning liquid 11 along the bottom surface and side surfaces of the cleaning tank 1 and is connected to a drive mechanism 8. An output cable 10 for supplying a high frequency voltage to the oscillator 6 is taken out of the cleaning liquid 11 through the quartz tube 7 and connected to the oscillator 9.
【００１６】駆動機構８は、電動モータとカム、ボール
ネジ若しくはワイヤの組み合わせ等で構成されており、
石英管７、発振子６及び振動子２を一体にして所望の距
離上下に往復運動させることができる。駆動機構８は、
これらの構成以外に油圧または空気圧のような流体の圧
力を利用したもの等でもよい。駆動の振幅、周期を可変
に設定できるようにしてもよい。The drive mechanism 8 is composed of a combination of an electric motor and a cam, a ball screw or a wire, and the like.
The quartz tube 7, the oscillator 6 and the vibrator 2 can be integrally reciprocated up and down a desired distance. The drive mechanism 8 is
In addition to these configurations, the one using the pressure of fluid such as hydraulic pressure or pneumatic pressure may be used. The drive amplitude and cycle may be variable.
【００１７】さらに、超音波の周波数変更または洗浄液
変更による超音波の波長の変化に対応できるように、往
復運動の振幅を変化させることができる。また、往復運
動の周期についても、洗浄時間等との整合をとるために
変更することができる。振動子の移動形態は、往復運動
に限らない、例えば、円運動等であってもよい。Further, the amplitude of the reciprocating motion can be changed so as to cope with the change of the wavelength of the ultrasonic wave due to the change of the frequency of the ultrasonic wave or the change of the cleaning liquid. Also, the cycle of reciprocating motion can be changed to match the cleaning time and the like. The mode of movement of the oscillator is not limited to reciprocating motion, but may be circular motion or the like.
【００１８】振動子２の上方には、載置される半導体ウ
エハの法線方向に石英製または樹脂製の２本の梁が水平
に洗浄槽１に固定されている。梁の間隔は、超音波の伝
搬の妨げにならないように、キャリア４を載置するため
に必要な間隔であって可能な限り広くするのが好まし
い。Above the vibrator 2, two beams made of quartz or resin are horizontally fixed to the cleaning tank 1 in the normal direction of the semiconductor wafer to be placed. The distance between the beams is necessary for mounting the carrier 4 and is preferably as wide as possible so as not to hinder the propagation of ultrasonic waves.
【００１９】このように構成された洗浄装置に、所定の
洗浄液１１を満たす。半導体ウエハ５を、所定の間隔で
キャリア４に装填し、梁３上に載置する。発振器９から
所定の周波数の交流電圧を供給することにより、発振子
６が所定の振動数で振動する。発振子６の振動は、振動
子２に伝わり、振動子２から洗浄液１１中に超音波が放
射される。同時に、駆動機構８によって、振動子２を上
下に往復運動させる。往復運動の振幅は、洗浄液１１中
に生じた定在波の半波長未満、または、半波長以上であ
って半波長の整数倍とならない距離とするのが好まし
い。The cleaning device thus constructed is filled with a predetermined cleaning liquid 11. The semiconductor wafer 5 is loaded on the carrier 4 at a predetermined interval and placed on the beam 3. By supplying an alternating voltage of a predetermined frequency from the oscillator 9, the oscillator 6 vibrates at a predetermined frequency. The vibration of the oscillator 6 is transmitted to the vibrator 2, and ultrasonic waves are radiated from the vibrator 2 into the cleaning liquid 11. At the same time, the drive mechanism 8 reciprocates the oscillator 2 up and down. The amplitude of the reciprocating motion is preferably less than a half wavelength of the standing wave generated in the cleaning liquid 11, or more than a half wavelength and not a multiple of the half wavelength.
【００２０】このように、振動子２を上下に往復運動さ
せることにより、定在波の節の位置も移動する。従っ
て、半導体ウエハ５の表面の特定の位置が常に定在波の
節になるということがない。そのため、洗浄効果にむら
がなく、半導体ウエハ５の表面を均一に洗浄することが
できる。By thus reciprocating the oscillator 2 up and down, the position of the node of the standing wave is also moved. Therefore, a specific position on the surface of the semiconductor wafer 5 does not always become a node of a standing wave. Therefore, the cleaning effect is uniform and the surface of the semiconductor wafer 5 can be uniformly cleaned.
【００２１】以下に、本実施例による超音波洗浄装置を
使用して、直径１５０ｍｍのシリコンウエハを洗浄した
場合の洗浄効果について説明する。洗浄槽１は、幅２５
ｃｍ、奥行き３０ｃｍ、深さ３０ｃｍのものを使用し
た。洗浄液として、アンモニア、過酸化水素水、純水の
容量比が１：１：５のアンモニア過酸化水素溶液を使用
した。The cleaning effect of cleaning a silicon wafer having a diameter of 150 mm by using the ultrasonic cleaning apparatus according to this embodiment will be described below. The cleaning tank 1 has a width of 25
cm, depth 30 cm, and depth 30 cm were used. As the cleaning liquid, an ammonia-hydrogen peroxide solution in which the volume ratio of ammonia, hydrogen peroxide solution, and pure water was 1: 1: 5 was used.
【００２２】０．３μｍ径のアルミナ粒子３０００〜６
０００個／ｃｍ2 を付着させたシリコンウエハ２５枚を
キャリアに装填し、室温で５分間洗浄を行った。超音波
照射条件は、出力８Ｗ／ｃｍ2 、周波数０．８ＭＨｚで
ある。このときの波長は約１．４ｍｍすなわち定在波の
節と節との間の距離は約０．７ｍｍである。振動子の往
復運動の条件は、振幅０．３５ｍｍ、周期５回／分であ
る。Alumina particles 3000 to 6 having a diameter of 0.3 μm
Twenty-five silicon wafers to which 000 pieces / cm 2 were attached were loaded on a carrier and washed at room temperature for 5 minutes. The ultrasonic irradiation conditions are an output of 8 W / cm 2 and a frequency of 0.8 MHz. The wavelength at this time is about 1.4 mm, that is, the distance between the nodes of the standing wave is about 0.7 mm. The conditions for the reciprocating motion of the oscillator are an amplitude of 0.35 mm and a cycle of 5 times / minute.
【００２３】このような条件で洗浄した結果、安定し
て、９９％以上のアルミナ粒子除去率を得ることができ
た。振動子の往復運動を行わないで洗浄した場合には、
アルミナ粒子除去率は９５％〜９７％であった。このよ
うに、振動子の往復運動を行うことにより、明らかに洗
浄効果の向上がみられた。なお、振動子の往復運動の振
幅を半波長よりも長い１．８ｍｍとした場合にも同様の
洗浄効果を得ることができた。As a result of washing under these conditions, it was possible to stably obtain an alumina particle removal rate of 99% or more. When cleaning without reciprocating the oscillator,
The removal rate of alumina particles was 95% to 97%. Thus, the reciprocating motion of the vibrator clearly improved the cleaning effect. The same cleaning effect could be obtained when the amplitude of the reciprocating motion of the vibrator was 1.8 mm, which was longer than the half wavelength.
【００２４】次に、複数の振動子を設け、異なる角度か
ら超音波を照射する他の実施例について説明する。図２
は、他の実施例による超音波洗浄装置を長さ方向から見
た断面図を示す。石英製の洗浄槽１の底部に、半導体ウ
エハを載置したときのウエハの法線方向に対して平行
に、純水供給用の円筒状の純水供給パイプ１２が配置さ
れている。純水供給パイプ１２の上部側面には、載置さ
れる半導体ウエハの間隔と等間隔に純水供給口１３が設
けられている。Next, another embodiment in which a plurality of vibrators are provided and ultrasonic waves are emitted from different angles will be described. Figure 2
[FIG. 6] is a cross-sectional view of an ultrasonic cleaning device according to another embodiment as seen from the length direction. A cylindrical pure water supply pipe 12 for pure water supply is arranged at the bottom of the quartz cleaning tank 1 in parallel with the normal line direction of the wafer when the semiconductor wafer is placed. Pure water supply ports 13 are provided on the upper side surface of the pure water supply pipe 12 at the same intervals as the intervals of the semiconductor wafers to be placed.
【００２５】純水供給パイプ１２の上方には、載置され
る半導体ウエハの法線方向に石英製または樹脂製の２本
の梁が洗浄槽１に水平に固定されている。梁の間隔は、
純水の流れの妨げにならないように、キャリア４を載置
するために必要な間隔であって可能な限り広くするのが
好ましい。Above the pure water supply pipe 12, two beams made of quartz or resin are horizontally fixed to the cleaning tank 1 in the normal direction of the semiconductor wafer to be placed. The spacing between the beams is
It is preferable that the space required for mounting the carrier 4 be as wide as possible so as not to obstruct the flow of pure water.
【００２６】石英製の板状の超音波振動子２ａ、２ｂ
が、載置されるキャリア４の両側下方に配置されてい
る。超音波振動子２ａ、２ｂは、超音波の照射方向が洗
浄液面に対して垂直もしくは平行にならないように傾斜
させて配置されている。これにより、液面からの反射波
の進行方向が入射波の方向と異なることになり、定在波
の発生を抑制することができる。Quartz plate-shaped ultrasonic transducers 2a, 2b
Are arranged below both sides of the carrier 4 to be placed. The ultrasonic transducers 2a and 2b are arranged so as to be inclined so that the irradiation direction of ultrasonic waves is not perpendicular or parallel to the cleaning liquid surface. As a result, the traveling direction of the reflected wave from the liquid surface is different from the incident wave direction, so that the generation of the standing wave can be suppressed.
【００２７】また、照射される超音波の中心軸線が半導
体ウエハのほぼ中心を通るように角度を調整することが
好ましい。これにより、放射された超音波を効率よく半
導体ウエハ表面に照射することができ、洗浄効率を向上
させることができる。Further, it is preferable to adjust the angle so that the central axis line of the ultrasonic waves to be irradiated passes through substantially the center of the semiconductor wafer. Thereby, the emitted ultrasonic waves can be efficiently applied to the surface of the semiconductor wafer, and the cleaning efficiency can be improved.
【００２８】振動子２ａ、２ｂの一端は、図１の実施例
と同様に、それぞれ発振子に固定されている。さらに、
この発振子はそれぞれ石英管内に設置され、石英管は、
それぞれ洗浄槽１の底面及び側面に沿って洗浄液１１の
液面上に引き出され、駆動機構に接続されている。One ends of the vibrators 2a and 2b are fixed to the oscillators, respectively, as in the embodiment of FIG. further,
Each of these oscillators is installed in a quartz tube, and the quartz tube is
Each of them is drawn out onto the liquid surface of the cleaning liquid 11 along the bottom surface and the side surface of the cleaning tank 1 and is connected to a drive mechanism.
【００２９】駆動機構は、図１に示す実施例と同様に振
動子２ａ、２ｂを所望の振幅で超音波の照射方向と平行
な方向に往復運動させることができる。往復運動の方向
は、必ずしも超音波の照射方向と平行な方向でなくても
よい。例えば、上下方向に往復運動させてもよい。The drive mechanism can reciprocate the vibrators 2a and 2b with a desired amplitude in a direction parallel to the ultrasonic wave irradiation direction, as in the embodiment shown in FIG. The direction of reciprocal movement does not necessarily have to be a direction parallel to the irradiation direction of ultrasonic waves. For example, it may be reciprocated in the vertical direction.
【００３０】このように構成された洗浄装置に、所望の
洗浄液１１を満たす。半導体ウエハ５を、所定の間隔で
キャリア４に装填し、梁３上に載置する。発振子の振動
は、振動子２ａ、２ｂに伝わり、振動子２ａ、２ｂから
洗浄液１１中に超音波が放射される。放射された超音波
は半導体ウエハ５の表面に異なる方向から照射される。
同時に、駆動機構によって、振動子２ａ、２ｂを超音波
の照射方向と平行な方向に往復運動させる。往復運動の
振幅は、洗浄液１１中に生じた定在波の半波長未満、ま
たは、半波長以上であって半波長の整数倍とならない距
離とするのが好ましい。The cleaning device thus constructed is filled with a desired cleaning liquid 11. The semiconductor wafer 5 is loaded on the carrier 4 at a predetermined interval and placed on the beam 3. The vibration of the oscillator is transmitted to the vibrators 2a and 2b, and ultrasonic waves are radiated from the vibrators 2a and 2b into the cleaning liquid 11. The emitted ultrasonic waves are applied to the surface of the semiconductor wafer 5 from different directions.
At the same time, the drive mechanism causes the vibrators 2a and 2b to reciprocate in a direction parallel to the ultrasonic wave irradiation direction. The amplitude of the reciprocating motion is preferably less than a half wavelength of the standing wave generated in the cleaning liquid 11, or more than a half wavelength and not a multiple of the half wavelength.
【００３１】このように、振動子２ａ、２ｂを往復運動
させることにより、半導体ウエハ５の表面の特定の位置
が常に定在波の節になるということがない。そのため、
洗浄効果にむらがなく、半導体ウエハ５の表面を均一に
洗浄することができる。さらに、半導体ウエハ５に異な
る方向から超音波を照射することにより、洗浄効果の均
一性を向上させることができる。As described above, by reciprocating the oscillators 2a and 2b, a specific position on the surface of the semiconductor wafer 5 does not always become a node of a standing wave. for that reason,
The cleaning effect is uniform, and the surface of the semiconductor wafer 5 can be uniformly cleaned. Furthermore, by irradiating the semiconductor wafer 5 with ultrasonic waves from different directions, the uniformity of the cleaning effect can be improved.
【００３２】以下に、本実施例による超音波洗浄装置を
使用して、直径１５０ｍｍのシリコンウエハを洗浄した
場合の洗浄効果について説明する。洗浄槽１は、図１の
実施例で使用したものと同等のものである。洗浄液とし
て、純水を使用し、常時洗浄槽底部の純水供給口１３か
ら純水を供給する。溢れた純水は洗浄して洗い流された
ゴミと共に洗浄槽１の上部から廃棄される。The cleaning effect of cleaning a silicon wafer having a diameter of 150 mm by using the ultrasonic cleaning apparatus according to this embodiment will be described below. The cleaning tank 1 is the same as that used in the embodiment of FIG. Pure water is used as the cleaning liquid, and is always supplied from the pure water supply port 13 at the bottom of the cleaning tank. The overflowed pure water is discarded from the upper portion of the cleaning tank 1 together with the washed and washed dust.
【００３３】０．３μｍ径のアルミナ粒子２０００〜４
０００個／ｃｍ2 を付着させたシリコンウエハをキャリ
アに装填し、室温で１０分間洗浄を行った。超音波照射
条件は、出力１．８Ｗ／ｃｍ2 、周波数２８ｋＨｚであ
る。このときの波長は約１０８ｍｍすなわち定在波の節
と節との間の距離は約５４ｍｍである。振動子の往復運
動の条件は、振幅１０ｍｍ、周期１０回／分である。Alumina particles having diameters of 0.3 μm 2000-4
A silicon wafer to which 000 pieces / cm 2 was attached was loaded on a carrier and washed at room temperature for 10 minutes. The ultrasonic irradiation conditions are an output of 1.8 W / cm 2 and a frequency of 28 kHz. The wavelength at this time is about 108 mm, that is, the distance between the nodes of the standing wave is about 54 mm. The conditions for the reciprocating motion of the vibrator are an amplitude of 10 mm and a cycle of 10 times / minute.
【００３４】このような条件で洗浄した結果、安定し
て、９０％以上のアルミナ粒子除去率を得ることができ
た。振動子の往復運動を行わないで洗浄した場合には、
アルミナ粒子除去率は５０％程度であった。このよう
に、振動子の往復運動を行うことにより、明らかに洗浄
効果の向上がみられた。As a result of washing under such conditions, a removal rate of alumina particles of 90% or more could be stably obtained. When cleaning without reciprocating the oscillator,
The removal rate of alumina particles was about 50%. Thus, the reciprocating motion of the vibrator clearly improved the cleaning effect.
【００３５】以上実施例に沿って本発明を説明したが、
本発明はこれらに制限されるものではない。例えば、種
々の変更、改良、組み合わせ等が可能なことは当業者に
自明であろう。The present invention has been described above with reference to the embodiments.
The present invention is not limited to these. For example, it will be apparent to those skilled in the art that various modifications, improvements, combinations, and the like can be made.
【００３６】[0036]
【発明の効果】以上説明したように、本発明の超音波洗
浄方法によると、被洗浄物表面を洗浄むらなく、均一に
洗浄することができる。As described above, according to the ultrasonic cleaning method of the present invention, the surface of the object to be cleaned can be uniformly cleaned without uneven cleaning.
【図１】本発明の実施例による洗浄装置の横方向及び長
さ方向から見た断面図である。FIG. 1 is a cross-sectional view of a cleaning device according to an embodiment of the present invention as viewed in a lateral direction and a length direction.
【図２】本発明の他の実施例による洗浄装置の断面図で
ある。FIG. 2 is a cross-sectional view of a cleaning device according to another embodiment of the present invention.
１ 洗浄槽 ２ 振動子 ３ 梁 ４ キャリア ５ 半導体ウエハ ６ 発振子 ７ 石英管 ８ 駆動機構 ９ 発振器 １０ 出力ケーブル １１ 洗浄液 １２ 純水供給パイプ １３ 純水供給口 1 Cleaning Tank 2 Oscillator 3 Beam 4 Carrier 5 Semiconductor Wafer 6 Oscillator 7 Quartz Tube 8 Driving Mechanism 9 Oscillator 10 Output Cable 11 Cleaning Liquid 12 Pure Water Supply Pipe 13 Pure Water Supply Port
Claims (7)
子から洗浄液中に放射された超音波を前記被洗浄物に照
射し、洗浄を行う超音波洗浄方法において、 超音波振動子を洗浄液中で移動させながら洗浄を行うこ
とを特徴とする超音波洗浄方法。1. An ultrasonic cleaning method in which an object to be cleaned is immersed in a cleaning liquid, and ultrasonic waves radiated from the ultrasonic vibrator into the cleaning liquid are applied to the object to be cleaned to perform cleaning. An ultrasonic cleaning method characterized in that cleaning is performed while moving in a cleaning liquid.
複数の方向から超音波を照射することを特徴とする請求
項１記載の超音波洗浄方法。2. The ultrasonic cleaning method according to claim 1, wherein a plurality of the ultrasonic transducers are provided and ultrasonic waves are emitted from a plurality of different directions.
中心軸線に対して平行な方向に、かつその両端で洗浄液
中に生じた定在波の腹と腹及び節と節が重ならないよう
な振幅で往復運動させることを特徴とする請求項１また
は２記載の超音波洗浄方法。3. The standing wave of the standing wave generated in the cleaning liquid in the direction parallel to the central axis of the ultrasonic wave irradiation direction of the ultrasonic oscillator and at both ends thereof, and the nodes and the nodes do not overlap with each other. The ultrasonic cleaning method according to claim 1 or 2, wherein the ultrasonic cleaning is performed with a reciprocating motion with various amplitudes.
洗浄物を浸漬し、洗浄液中に配置された振動子から放射
された超音波を前記被洗浄物に照射して洗浄を行う超音
波洗浄装置において、 前記振動子と接続され、前記振動子を洗浄液中で移動さ
せるための駆動手段を有する超音波洗浄装置。4. An ultrasonic wave for performing cleaning by filling a cleaning tank with a cleaning liquid, immersing the cleaning target in the cleaning liquid, and irradiating the cleaning target with ultrasonic waves emitted from a vibrator arranged in the cleaning liquid. A cleaning device, wherein the ultrasonic cleaning device is connected to the vibrator and has a driving unit for moving the vibrator in the cleaning liquid.
れぞれの振動子は、超音波の放射方向が異なるように配
置されている請求項４記載の超音波洗浄装置。5. The ultrasonic cleaning apparatus according to claim 4, wherein a plurality of sets of the vibrator and the driving unit are provided, and the vibrators are arranged so that the emission directions of the ultrasonic waves are different.
させるための振幅可変手段を有する請求項４または５記
載の超音波洗浄装置。6. The ultrasonic cleaning apparatus according to claim 4, wherein the driving unit has an amplitude changing unit for changing the amplitude of the reciprocating motion.
させるための周期可変手段を有する請求項４〜６のいず
れかに記載の超音波洗浄装置。7. The ultrasonic cleaning device according to claim 4, wherein the driving unit has a period changing unit for changing the period of the reciprocating motion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15717793A JPH0714814A (en) | 1993-06-28 | 1993-06-28 | Ultrasonic cleaning method and device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15717793A JPH0714814A (en) | 1993-06-28 | 1993-06-28 | Ultrasonic cleaning method and device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0714814A true JPH0714814A (en) | 1995-01-17 |
Family
ID=15643875
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15717793A Withdrawn JPH0714814A (en) | 1993-06-28 | 1993-06-28 | Ultrasonic cleaning method and device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0714814A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0887041A3 (en) * | 1997-06-26 | 1999-05-26 | EVANS, David H. | Ultrasonic cleaning system |
| US6085764A (en) * | 1997-07-22 | 2000-07-11 | Tdk Corporation | Cleaning apparatus and method |
| JP2016210018A (en) * | 2015-04-30 | 2016-12-15 | 富士ゼロックス株式会社 | Cleaning device and droplet discharge device |
| CN107068595A (en) * | 2017-04-14 | 2017-08-18 | 常州亿晶光电科技有限公司 | Silicon chip ultrasonic wave cleaning device |
-
1993
- 1993-06-28 JP JP15717793A patent/JPH0714814A/en not_active Withdrawn
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0887041A3 (en) * | 1997-06-26 | 1999-05-26 | EVANS, David H. | Ultrasonic cleaning system |
| US6085764A (en) * | 1997-07-22 | 2000-07-11 | Tdk Corporation | Cleaning apparatus and method |
| US6178974B1 (en) | 1997-07-22 | 2001-01-30 | Tdk Corporation | Cleaning apparatus and method |
| JP2016210018A (en) * | 2015-04-30 | 2016-12-15 | 富士ゼロックス株式会社 | Cleaning device and droplet discharge device |
| CN107068595A (en) * | 2017-04-14 | 2017-08-18 | 常州亿晶光电科技有限公司 | Silicon chip ultrasonic wave cleaning device |
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