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JPH07138741A - Vacuum vapor deposition device - Google Patents

Vacuum vapor deposition device

Info

Publication number
JPH07138741A
JPH07138741A JP31111093A JP31111093A JPH07138741A JP H07138741 A JPH07138741 A JP H07138741A JP 31111093 A JP31111093 A JP 31111093A JP 31111093 A JP31111093 A JP 31111093A JP H07138741 A JPH07138741 A JP H07138741A
Authority
JP
Japan
Prior art keywords
substrate
shutter
vapor deposition
evaporation source
shielding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP31111093A
Other languages
Japanese (ja)
Inventor
Shigeru Hashimoto
茂 橋本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP31111093A priority Critical patent/JPH07138741A/en
Publication of JPH07138741A publication Critical patent/JPH07138741A/en
Pending legal-status Critical Current

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Landscapes

  • Physical Vapour Deposition (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Surface Treatment Of Optical Elements (AREA)

Abstract

PURPOSE:To prevent the incidence of an electron beam of an electron gun on a substrate. CONSTITUTION:A substrate W is held in the upper part of a vacuum chamber 1 and a shielding plate 5 having an opening 5a is disposed between this substrate and an evaporating source 2 disposed in the bottom of this vacuum chamber 1. This evaporating source 2 is heated by the electron gun 2b and a shutter 4 shuts off the passage of evaporated particles before the material to be evaporated in a crucible 2a is completely melted. The shutter 4 and the shielding plate 5 are respectively connected to contacts 6a, 7a of a voltage power source or grounded contact 6b, 7b and the electron beam reflected by the evaporating source 2 is effectively captured so that the incidence thereof on the substrate is prevented.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、レーザ光用薄膜等を成
膜する真空蒸着装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum vapor deposition apparatus for forming a thin film for laser light or the like.

【0002】[0002]

【従来の技術】レンズ等の光学部品に反射防止膜等の光
学薄膜を成膜する真空蒸着装置は一般的に真空室内に蒸
発源を有し、これを電子銃加熱や抵抗加熱等によって加
熱蒸発させ、発生した蒸発粒子を基板に被着させるよう
に構成されている。なかでも、電子銃加熱によって蒸発
源を蒸発させる電子銃加熱方式の真空蒸着装置は、蒸着
材料となる物質の種類に制約が少ないため、極めて広く
利用されており、特に高融点酸化物等を蒸着材料とする
場合には最も多用されている。
2. Description of the Related Art A vacuum vapor deposition apparatus for depositing an optical thin film such as an antireflection film on an optical component such as a lens generally has an evaporation source in a vacuum chamber, which is heated and evaporated by electron gun heating or resistance heating. The vaporized particles thus generated are deposited on the substrate. Among them, the electron gun heating type vacuum vapor deposition apparatus that evaporates the evaporation source by electron gun heating is extremely widely used because there are few restrictions on the types of substances that are vapor deposition materials, and in particular, high melting point oxides are vapor deposited. It is most often used as a material.

【0003】電子銃加熱方式の真空蒸着装置は、一般的
に、導電性のるつぼまたはハースに入れた蒸発材料に電
子銃のフィラメントから発生された電子ビームを照射し
て加熱蒸発させる。るつぼまたはハースは接地されてお
り、電子銃のフィラメントはタングステン製で6〜10
kVの負の電位に印加される。また、電子銃はるつぼや
ハースに入れた蒸発材料より下方に配設され、偏向磁場
によって電子ビームを上方へ曲げることで蒸発材料に到
達させる。これは、蒸発材料から発生する蒸発粒子によ
って電子銃のフィラメントが汚染されるのを防ぐためで
ある。
An electron gun heating type vacuum vapor deposition apparatus generally irradiates an evaporation material contained in a conductive crucible or a hearth with an electron beam generated from a filament of an electron gun to heat and evaporate the material. The crucible or hearth is grounded and the filament of the electron gun is made of tungsten 6-10
Applied to a negative potential of kV. The electron gun is arranged below the evaporation material contained in the crucible or the hearth, and the electron beam is bent upward by the deflection magnetic field to reach the evaporation material. This is to prevent the filament of the electron gun from being contaminated by the vaporized particles generated from the vaporized material.

【0004】[0004]

【発明が解決しようとする課題】しかしながら上記従来
の技術によれば、蒸発材料が完全に溶融する前の半溶融
状態やあるいは部分的に固体であるときは電子ビームの
一部分が蒸発材料の表面で反射されて基板に入射し、表
面欠陥を発生させる。このような基板の表面欠陥は、一
般の可視域で使用される光学部品の場合には問題視され
ることが少ないが、高出力レーザ光および紫外レーザ光
用の光学部品や蛍石等のフッ化物基板の場合には、カラ
ーセンターを発生したり不対電子のためにレーザ耐力を
劣化させるなど、大きな障害となるおそれがある。
However, according to the above conventional technique, when the evaporation material is in a semi-molten state before being completely melted or partially solid, a part of the electron beam is on the surface of the evaporation material. The light is reflected and enters the substrate to generate surface defects. Such surface defects of the substrate are less likely to be a problem in the case of optical components generally used in the visible region, but optical components for high-power laser light and ultraviolet laser light, and fluorine such as fluorite. In the case of a compound substrate, there is a possibility of causing a major obstacle such as generation of a color center or deterioration of laser resistance due to unpaired electrons.

【0005】本発明は、上記従来の技術の有する問題点
に鑑みてなされたものであり、電子銃の電子ビームが基
板に入射するおそれのない真空蒸着装置を提供すること
を目的とするものである。
The present invention has been made in view of the above problems of the prior art, and an object of the present invention is to provide a vacuum vapor deposition apparatus in which the electron beam of an electron gun does not enter the substrate. is there.

【0006】[0006]

【課題を解決するための手段】上記の目的を達成するた
め本発明の真空蒸着装置は、所定の部位に基板を保持す
る真空室と、該真空室内に配設された蒸発源と、これを
加熱する電子銃加熱手段と、前記蒸発源から前記基板に
向って発生される蒸発粒子の通路を除いて前記真空室の
前記所定の部位を前記蒸発源から遮蔽する遮蔽手段と、
前記蒸発粒子の通路を遮蔽することの自在なシャッタ手
段を有することを特徴とする。
In order to achieve the above object, a vacuum vapor deposition apparatus of the present invention includes a vacuum chamber for holding a substrate at a predetermined portion, an evaporation source arranged in the vacuum chamber, and an evaporation source for the vacuum chamber. Electron gun heating means for heating; shielding means for shielding the predetermined portion of the vacuum chamber from the evaporation source, except for a passage of evaporation particles generated from the evaporation source toward the substrate;
It is characterized by having a shutter means capable of blocking the passage of the vaporized particles.

【0007】遮蔽手段とシャッタ手段のうちの少なくと
も一方が接地または正に帯電されているとよい。
At least one of the shielding means and the shutter means may be grounded or positively charged.

【0008】[0008]

【作用】上記装置によれば、蒸発源を電子銃加熱手段に
よって加熱して蒸発粒子を発生させるに際して、蒸発源
が充分な溶融状態に到達するまでシャッタ手段を閉じて
おき、蒸発源の表面で反射される電子ビーム等をシャッ
タ手段と遮蔽手段によって遮断し、これらの電子ビーム
が基板に入射して表面欠陥を発生するのを防ぐ。遮蔽手
段とシャッタ手段のうちの少なくとも一方が接地または
正に帯電されていれば、蒸発源から反射された電子ビー
ム等を静電力によって捕捉することでより一層効果的に
遮断できる。
According to the above apparatus, when the evaporation source is heated by the electron gun heating means to generate the evaporation particles, the shutter means is closed until the evaporation source reaches a sufficiently molten state, and the evaporation source surface is kept. The reflected electron beams and the like are blocked by the shutter means and the shielding means, and these electron beams are prevented from entering the substrate and causing surface defects. If at least one of the shielding means and the shutter means is grounded or positively charged, the electron beam or the like reflected from the evaporation source can be blocked more effectively by being captured by electrostatic force.

【0009】[0009]

【実施例】本発明の実施例を図面に基づいて説明する。Embodiments of the present invention will be described with reference to the drawings.

【0010】図1は一実施例を示す模式断面図であっ
て、これは、図示しない排気口に接続された真空ポンプ
によって排気される真空室1と、その底部に配設された
蒸発源2と、該蒸発源2の上方に取りはずし自在に設け
られたドーム状の基板ホルダ3を有し、蒸発源2は上向
きに開口するるつぼ2aとその下方に配設された電子銃
加熱手段である電子銃2bを有し、るつぼ2a内には所
定のレーザ用光学薄膜の蒸発材料が収容され、電子銃2
bから発せられた電子ビームは図示しない磁気装置の偏
向磁場によって上方へ曲げられてるつぼ2a内の蒸発材
料に到達し、これを加熱溶融する。また、基板ホルダ3
は複数のフッ化物製の基板Wを保持し、蒸発源2から発
生される蒸発粒子が各基板Wに到達するまでの距離が均
一であるようにるつぼ2aを中心とする球面状にわん曲
しており、加えて、図示しない回転装置によって回転さ
れる。電子銃2bはタングステン製のフィラメントを有
し、6〜10kVの負の電位に印加される。
FIG. 1 is a schematic sectional view showing an embodiment, which is a vacuum chamber 1 evacuated by a vacuum pump connected to an exhaust port (not shown) and an evaporation source 2 arranged at the bottom thereof. And a dome-shaped substrate holder 3 which is detachably provided above the evaporation source 2. The evaporation source 2 is a crucible 2a opening upward and an electron gun heating means arranged below the crucible 2a. The electron gun 2 has a gun 2b, and a predetermined evaporation material of a laser optical thin film is housed in the crucible 2a.
The electron beam emitted from b reaches the evaporation material in the crucible 2a bent upward by the deflection magnetic field of a magnetic device (not shown) and heats and melts it. Also, the substrate holder 3
Holds a plurality of fluoride-made substrates W and bends them into a spherical shape centered on the crucible 2a so that the vaporized particles generated from the vaporization source 2 reach each substrate W at a uniform distance. In addition, it is rotated by a rotating device (not shown). The electron gun 2b has a tungsten filament and is applied to a negative potential of 6 to 10 kV.

【0011】蒸発源2と基板ホルダ3の間には、蒸発源
2から発生される蒸発粒子の流れを遮断するシャッタ手
段であるシャッタ4と、真空室1内を、基板ホルダ3を
収容する所定の部位である上方部分とシャッタ4および
蒸発源2を収容する下方部分とに2分する遮蔽手段であ
る遮蔽板5が設けられており、シャッタ4は回転軸4a
の回転によって蒸発源2の蒸発粒子の流れを遮断しない
位置に後退自在であり、遮蔽板5は、真空室1の側壁1
aと一体である支持体1b上に絶縁材1cを介して取り
はずし自在に支持されている。遮蔽板5の中央には、シ
ャッタ4が後退したときに蒸発源2から発生される蒸発
粒子の流れを基板ホルダ3上の各基板Wに到達させるた
めの通路である開口5aが設けられている。
Between the evaporation source 2 and the substrate holder 3, a shutter 4 which is a shutter means for blocking the flow of evaporated particles generated from the evaporation source 2 and a predetermined chamber for accommodating the substrate holder 3 in the vacuum chamber 1 are provided. A shielding plate 5 as a shielding means that divides the shutter 4 and the evaporation source 2 into two parts is provided in the upper part which is the part of the shutter 4 and the lower part which houses the evaporation source 2.
Of the evaporation source 2 can be retracted to a position where the flow of evaporation particles of the evaporation source 2 is not blocked, and the shielding plate 5 is provided on the side wall 1 of the vacuum chamber 1.
It is detachably supported on the support 1b which is integral with a through an insulating material 1c. At the center of the shielding plate 5, there is provided an opening 5a which is a passage for allowing the flow of vaporized particles generated from the vaporization source 2 when the shutter 4 retracts to reach each substrate W on the substrate holder 3. .

【0012】シャッタ4と遮蔽板5はそれぞれ導電性の
材料で作られており、切換スイッチ6,7の切換えによ
って、例えば10kVの正の電位に印加された回路手段
である接点6a,7aあるいは接地された回路手段であ
る接点6b,7bに選択的に接続される。
The shutter 4 and the shielding plate 5 are each made of a conductive material, and by switching the selector switches 6 and 7, for example, contacts 6a and 7a which are circuit means applied to a positive potential of 10 kV or ground. It is selectively connected to the contacts 6b and 7b which are the circuit means.

【0013】各基板Wに対する真空蒸着は以下のように
行われる。
Vacuum deposition on each substrate W is performed as follows.

【0014】まず、シャッタ4を閉じた状態で電子銃2
bから電子ビームを発生させてるつぼ2a内の蒸発材料
の溶融を開始する。るつぼ2a内の蒸発材料が固体ある
いは半溶融状態である間は、電子銃2bの電子ビームの
一部分がるつぼ2a内の蒸発材料の表面で反射されて上
方へ発散するが、前述のようにシャッタ4および遮蔽板
5が設けられており、加えてこれらが接地または正の電
位に帯電しているため、上方へ発散した電子ビームはす
べてシャッタ4または遮蔽板5に捕捉され、真空室1の
上部空間へ到達するおそれはない。従って、従来のよう
に蒸発源2から反射された電子ビームが各基板Wに入射
して表面欠陥を発生させるおそれはない。
First, the electron gun 2 with the shutter 4 closed.
The melting of the evaporation material in the crucible 2a, which causes the electron beam to be generated from b, starts. While the evaporation material in the crucible 2a is in a solid or semi-molten state, a part of the electron beam of the electron gun 2b is reflected by the surface of the evaporation material in the crucible 2a and diverges upward. Further, since the shielding plate 5 is provided, and these are charged to the ground or positive potential, all the electron beams diverging upward are captured by the shutter 4 or the shielding plate 5, and the upper space of the vacuum chamber 1 is There is no danger of reaching. Therefore, unlike the conventional case, there is no possibility that the electron beam reflected from the evaporation source 2 enters each substrate W and causes a surface defect.

【0015】るつぼ2a内の蒸発材料が充分に溶融した
らシャッタ4を後退させ、遮蔽板5の開口5aを通って
真空室1の上部空間へ照射される蒸発粒子を各基板Wに
被着させる。このようにしてレーザ用の光学薄膜を成膜
すれば、基板の表面欠陥によるカラーセンターの発生や
不対電子によるレーザ耐力の低下を防ぐことができる。
When the evaporation material in the crucible 2a is sufficiently melted, the shutter 4 is retracted and the evaporation particles irradiated onto the upper space of the vacuum chamber 1 through the opening 5a of the shielding plate 5 are adhered to each substrate W. By thus forming the optical thin film for the laser, it is possible to prevent the generation of the color center due to the surface defect of the substrate and the reduction of the laser resistance due to the unpaired electrons.

【0016】なお、遮蔽板5の開口5aの寸法は、図2
に示すようにるつぼ2aと基板ホルダ3の間の離間距離
Lとるつぼ2aと遮蔽板5の間の離間距離hに対して以
下の関係にあるのが望ましい。
The size of the opening 5a of the shielding plate 5 is as shown in FIG.
As shown in FIG. 5, it is preferable that the distance L between the crucible 2a and the substrate holder 3 and the distance h between the crucible 2a and the shield plate 5 have the following relationship.

【0017】h/φ=L/R・・・・・(1) ここで、φ:開口5aの直径 R:基板ホルダの直径 遮蔽板5の開口5aの寸法が式(1)を満足するように
設定されていれば、蒸発源2から発生される蒸発粒子を
無駄にすることなく、各基板Wの表面に到達させること
ができる。なお、各切換スイッチ6,7の切換えによっ
てシャッタ4と遮蔽板5を接地した状態から正の電位を
印加した状態に変化させ、さらに、その電圧を10kV
まで変化させて成膜された光学薄膜のカラーセンターの
有無やレーザ耐力を調べたところ、シャッタ4や遮蔽板
5の電圧による差異はみとめられなかった。
H / φ = L / R (1) where φ: diameter of the opening 5a R: diameter of the substrate holder so that the size of the opening 5a of the shielding plate 5 satisfies the equation (1). If set to, the evaporation particles generated from the evaporation source 2 can reach the surface of each substrate W without wasting. It should be noted that the shutter 4 and the shielding plate 5 are changed from the grounded state to the state in which a positive potential is applied by switching the respective changeover switches 6 and 7, and further, the voltage thereof is set to 10 kV.
When the presence or absence of a color center and the laser proof strength of the optical thin film formed by changing the temperature were examined, no difference due to the voltage of the shutter 4 or the shielding plate 5 was found.

【0018】なお、本実施例においてはシャッタと遮蔽
板が個別に接地あるいは正の電圧電源に接続されている
が、両者を1個の切換スイッチに接続し、共通の接地電
極あるいは正の電極に接続することもできることは言う
までもない。また、反射される電子ビームが少量であれ
ば、シャッタと遮蔽板のいずれか一方のみを接地あるい
は正の電位に帯電させてもよい。
In this embodiment, the shutter and the shielding plate are individually connected to the ground or a positive voltage power source, but they are connected to a single changeover switch and connected to a common ground electrode or a positive electrode. It goes without saying that you can also connect. Further, if the reflected electron beam is small, only one of the shutter and the shielding plate may be grounded or charged to a positive potential.

【0019】本実施例によれば、蒸発源の表面で反射さ
れた電子ビームをシャッタと遮蔽板によって遮断すると
ともに、シャッタおよび遮蔽板のうちの少なくとも一方
を接地または正に帯電させることによって前記電子ビー
ムを効果的に捕捉することができるため、前記電子ビー
ムが基板に入射して表面欠陥を発生させるおそれがな
い。
According to the present embodiment, the electron beam reflected on the surface of the evaporation source is blocked by the shutter and the shield plate, and at least one of the shutter and the shield plate is grounded or positively charged to cause the electrons to be emitted. Since the beam can be effectively captured, there is no possibility that the electron beam will be incident on the substrate and cause surface defects.

【0020】[0020]

【発明の効果】本発明は上述のように構成されているの
で、以下に記載するような効果を奏する。
Since the present invention is constructed as described above, it has the following effects.

【0021】電子銃加熱方式の真空蒸着装置において、
蒸発源が充分な溶融状態に到達する前に蒸発源の表面で
反射された電子ビーム等が基板に入射して表面欠陥を発
生させるおそれがない。その結果、特に、高出力レーザ
光や紫外レーザ光用の光学部品や蛍石等のフッ化物を基
板とする場合に極めて良質でレーザ耐力にすぐれた光学
薄膜を得ることができる。
In an electron gun heating type vacuum vapor deposition apparatus,
There is no risk that an electron beam or the like reflected on the surface of the evaporation source will enter the substrate before the evaporation source reaches a sufficiently molten state to generate surface defects. As a result, it is possible to obtain an optical thin film which is extremely good in quality and has excellent laser resistance particularly when a substrate is made of an optical component for high-power laser light or ultraviolet laser light or a fluoride such as fluorite.

【図面の簡単な説明】[Brief description of drawings]

【図1】一実施例による真空蒸着装置を示す模式断面図
である。
FIG. 1 is a schematic cross-sectional view showing a vacuum vapor deposition device according to an embodiment.

【図2】図1の装置の遮蔽板の開口の寸法を説明する図
である。
FIG. 2 is a diagram for explaining the size of an opening of a shielding plate of the device shown in FIG.

【符号の説明】[Explanation of symbols]

W 基板 1 真空室 1a 側壁 1b 支持体 1c 絶縁材 2 蒸発源 2a るつぼ 2b 電子銃 3 基板ホルダ 4 シャッタ 4a 回転軸 5 遮蔽板 5a 開口 6,7 切換スイッチ 6a,6b,7a,7b 接点 W substrate 1 vacuum chamber 1a side wall 1b support 1c insulating material 2 evaporation source 2a crucible 2b electron gun 3 substrate holder 4 shutter 4a rotating shaft 5 shield plate 5a opening 6,7 changeover switch 6a, 6b, 7a, 7b contact

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 所定の部位に基板を保持する真空室と、
該真空室内に配設された蒸発源と、これを加熱する電子
銃加熱手段と、前記蒸発源から前記基板に向って発生さ
れる蒸発粒子の通路を除いて前記真空室の前記所定の部
位を前記蒸発源から遮蔽する遮蔽手段と、前記蒸発粒子
の通路を遮蔽することの自在なシャッタ手段を有するこ
とを特徴とする真空蒸着装置。
1. A vacuum chamber for holding a substrate at a predetermined site,
The evaporation source provided in the vacuum chamber, an electron gun heating means for heating the evaporation source, and a passage for vaporized particles generated from the evaporation source toward the substrate are removed from the predetermined portion of the vacuum chamber. A vacuum vapor deposition apparatus comprising: a shielding means for shielding from the evaporation source and a shutter means capable of shielding the passage of the evaporated particles.
【請求項2】 遮蔽手段とシャッタ手段のうちの少なく
とも一方が接地または正に帯電されていることを特徴と
する請求項1記載の真空蒸着装置。
2. The vacuum vapor deposition apparatus according to claim 1, wherein at least one of the shielding means and the shutter means is grounded or positively charged.
【請求項3】 遮蔽手段とシャッタ手段の両方が個別の
回路手段によって接地または正に帯電されていることを
特徴とする請求項1または2記載の真空蒸着装置。
3. The vacuum vapor deposition apparatus according to claim 1, wherein both the shielding means and the shutter means are grounded or positively charged by separate circuit means.
【請求項4】 遮蔽手段とシャッタ手段の両方が共通の
回路手段によって接地または正に帯電されていることを
特徴とする請求項1ないし3いずれか1項記載の真空蒸
着装置。
4. The vacuum vapor deposition apparatus according to claim 1, wherein both the shielding means and the shutter means are grounded or positively charged by a common circuit means.
【請求項5】 遮蔽手段が着脱自在な遮蔽板であること
を特徴とする請求項1ないし4いずれか1項記載の真空
蒸着装置。
5. The vacuum vapor deposition apparatus according to claim 1, wherein the shielding means is a detachable shielding plate.
JP31111093A 1993-11-17 1993-11-17 Vacuum vapor deposition device Pending JPH07138741A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31111093A JPH07138741A (en) 1993-11-17 1993-11-17 Vacuum vapor deposition device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31111093A JPH07138741A (en) 1993-11-17 1993-11-17 Vacuum vapor deposition device

Publications (1)

Publication Number Publication Date
JPH07138741A true JPH07138741A (en) 1995-05-30

Family

ID=18013271

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31111093A Pending JPH07138741A (en) 1993-11-17 1993-11-17 Vacuum vapor deposition device

Country Status (1)

Country Link
JP (1) JPH07138741A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015188530A1 (en) * 2014-06-10 2015-12-17 京东方科技集团股份有限公司 Collecting device and vapor deposition process using same
WO2017163404A1 (en) * 2016-03-25 2017-09-28 技術研究組合次世代3D積層造形技術総合開発機構 3d additive manufacturing device, control method for 3d additive manufacturing device, and control program for 3d additive manufacturing device
CN109402569A (en) * 2018-11-09 2019-03-01 上海利方达真空技术有限公司 A kind of indium layer film-coating mechanism of silicon integrated circuit

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015188530A1 (en) * 2014-06-10 2015-12-17 京东方科技集团股份有限公司 Collecting device and vapor deposition process using same
WO2017163404A1 (en) * 2016-03-25 2017-09-28 技術研究組合次世代3D積層造形技術総合開発機構 3d additive manufacturing device, control method for 3d additive manufacturing device, and control program for 3d additive manufacturing device
JP6231695B1 (en) * 2016-03-25 2017-11-15 技術研究組合次世代3D積層造形技術総合開発機構 Control method for three-dimensional additive manufacturing apparatus, control method for three-dimensional additive manufacturing apparatus, and control program for three-dimensional additive manufacturing apparatus
US10583517B2 (en) 2016-03-25 2020-03-10 Technology Research Association For Future Additive Manufacturing Three-dimensional laminating and shaping apparatus, three-dimensional lamenting and shaping apparatus control method, and three-dimensional laminating and shaping apparatus control program
CN109402569A (en) * 2018-11-09 2019-03-01 上海利方达真空技术有限公司 A kind of indium layer film-coating mechanism of silicon integrated circuit

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