JPH06817Y2 - Atmospheric pressure CVD equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention relates to an atmospheric pressure CVD apparatus.

[Conventional technology]

Conventionally, in this type of atmospheric pressure CVD apparatus, once the parallelism and the gap between the tray and the gas mixture blowing head have been adjusted, the trays are continuously flowed to perform the single-wafer processing.

[Problems to be Solved by the Invention] The conventional atmospheric pressure CVD apparatus described above merely adjusts the parallelism and the gap distance between the gas mixing blowing head and the wafer on the tray in advance, and this adjustment is performed for each tray. Therefore, the parallelism and the gap between the trays may vary due to the error between trays and the error in the tray holding position of the tray transport belt.As a result, the film thickness after the actual CVD process may vary. Had the drawback that it would come out.

An object of the present invention is to provide an atmospheric pressure CVD apparatus that solves the above problems.

[Differences from the Prior Art of Invention]

The present invention is different from the conventional atmospheric pressure CVD apparatus described above in that it has a function of adjusting the parallelism and the gap distance between the wafer surface and the wafer-corresponding surface of the gas mixture blowing head for each tray and always keeping the set values. Have.

[Means for solving problems]

In order to achieve the above object, an atmospheric pressure CVD apparatus according to the present invention comprises a tray, a gas mixing blowing head, a sensor,
An atmospheric pressure CVD apparatus having an adjusting mechanism, wherein a tray supports a wafer, a gas mixing blowing head blows a gas for growing a CVD film toward a wafer on the tray, and a sensor Is to measure the parallelism and the gap distance between the wafer on the tray and the gas mixture blowing head, and the adjusting mechanism sets the parallelism and the gap distance to fixed set values based on the measurement signal from the sensor. It has two vertical axis support arms, one horizontal axis support arm, and a rotation support arm, and the two vertical axis support arms vertically move with respect to the wafer on the tray. It is moved up and down in the direction to adjust the gap distance between the wafer and the gas mixture blowing head. One horizontal axis support arm is placed horizontally between the two vertical axis support arms and The rotation support arm rotates the gas mixing blowing head around the horizontal axis supporting arm to adjust the parallelism of the gas mixing blowing head with respect to the wafer. is there.

〔Example〕

 An embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 is a perspective view showing an embodiment of the present invention.

In the figure, the conveyor belt 3 is stretched horizontally and the belt 3
, A plurality of trays 2, 2 are provided at regular intervals, a stage 8 for holding the tray 2 on the belt 3 in a fixed position is provided, and a gas mixing blowing head 4 is provided directly above the stage 8. 5 is a gas introduction hose. The gas mixing blowing head 4 includes a gas mixing blowing head 4 and a tray 2.
It is mounted on an adjusting mechanism 7 for adjusting the parallelism with the upper wafer 1 and the gap distance to set values. The adjusting mechanism 7 is arranged in the front-rear direction along the moving direction of the conveyor belt 3 and moves up and down.
It has a book support arm 7a, 7a, a support shaft 7b which is laid horizontally between the two support arms 7a, 7a, and a support arm 7c. The support shaft 7b is provided with the end portion of the gas mixing blowing head 4. The head 4 is rotatably supported, and the head 4 is rotated around the shaft 7b by the support arm 7c to control the posture of the head 4 in the direction traversing the conveyor belt 3, while the front and rear support arms 7a,
7a is moved up and down to move the head 4 along the moving direction of the conveyor belt 3.
By controlling the posture of (1), the parallelism and the gap distance between the gas mixing blowing head 4 and the wafer 1 on the tray 2 are adjusted to set values.

On the other hand, on the stage 8, two distance measuring sensors 6 are arranged in front and rear along the moving direction of the conveyor belt 3, and the distance to the tray 2 is measured by the sensors 6, and each tray 2 is measured. Then, the parallelism and the gap distance between the head 4 and the wafer 1 on the tray 2 are measured.

In the embodiment, the wafer 1 is placed on the tray 2 and moved in the arrow direction by the conveyor belt 3. Gas is introduced from the gas introduction hose 5 into the gas mixture blowing head 4, and the mixed gas is blown out from the wafer corresponding surface of the head. When the tray 2 passes under the head 4, a plurality of sensors 6 measure the distance to the tray 2 for each tray 2, and the adjusting mechanism 7 makes a gas mixture blowout based on the measurement data from the sensor 6. The support arms 7a and 7c of the head 4 are automatically adjusted to adjust the parallelism and the gap distance of the wafer-corresponding surface of the gas mixing blowing head 4 to the set values. It is more effective to dispose the sensor 6 above the tray 2 so as to directly measure the distance between the wafers 1 rather than the distance between the trays.

[Effect of device]

As described above, the present invention keeps the parallelism and the gap distance between the wafer on the tray and the wafer-corresponding surface of the gas mixture blowing head at the set value at the time of the vapor phase growth process. There is an effect that there is no variation in the parallelism gap between the wafer and the gas mixing blowing head during processing, and there is no variation in the film thickness of the wafer after vapor phase growth processing (CVD processing).

[Brief description of drawings]

FIG. 1 is a schematic view of an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1 ... Wafer (semiconductor substrate) 2 ... Tray 3 ... Tray transport belt 4 ... Gas mixing blow-out head 5 ... Gas introduction hose 6 ... Distance measuring sensor 7 ... Adjustment mechanism

Claims (1)

[Scope of utility model registration request] 1. A normal pressure CVD apparatus having a tray, a gas mixing blowing head, a sensor, and an adjusting mechanism, wherein the tray supports a wafer, and the gas mixing blowing head is on the tray. A gas for CVD film growth is blown toward the wafer, a sensor measures the parallelism and the gap distance between the wafer on the tray and the gas mixture blowing head, and an adjustment mechanism measures from the sensor. The parallelism and the gap distance are adjusted to a fixed set value on the basis of a signal and has two vertical axis support arms, one horizontal axis support arm, and a rotation support arm, The two vertical axis support arms are for vertically moving the wafer on the tray to adjust the gap distance between the wafer and the gas mixture blowing head, and one horizontal axis support arm. Is a device that horizontally extends between two vertical support arms to rotatably support the end of the gas mixing blowing head. The atmospheric pressure CVD apparatus is characterized in that the parallelism of the gas mixture blowing head with respect to the wafer is adjusted by rotating the head.