JPH0661233A - Manufacture of semiconductor device - Google Patents

Abstract

(57) [Summary] (Modified) [Purpose] A semiconductor that can prevent leakage between bump electrodes and can surely make contact without causing defective contact between the bump electrode and the ILB electrode. A method for manufacturing a device is provided. [Structure] Using the second mask pattern 9 as a mask, the first
Of the first bump electrode 7 as a plating electrode, and the first bump electrode 7 is filled with the first bump electrode 7 so as to fill the second opening 9a.
The second bump electrode 10 having a width smaller than the width of the bump electrode 7 of
Is formed, the first and second mask patterns 8 and 9 are removed, and a photosensitive polyimide 11 is formed on the entire surface. Then, the first bump electrodes 7 are filled by exposure and development, and the second bump electrodes are formed. By patterning the photosensitive polyimide 11 so as to remain on the first bump electrode 7 between 10 and then heat treating the photosensitive polyimide 11, the upper surface of the first bump electrode 7 and the upper surface of the second bump electrode 10 are patterned. Heat shrink so that the upper surface of the photosensitive polyimide 11 lies between them.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device, and more particularly, it can be applied to a method of manufacturing a semiconductor device having a dicing step and a bonding step.
In particular, it is possible to prevent the leakage between the bump electrodes and to prevent the bump electrodes and the ILB (Inner Lead Bondi
ng) The present invention relates to a method for manufacturing a semiconductor device capable of surely making contact without causing electrode contact failure.

In recent years, in the method of manufacturing a semiconductor device,
With the miniaturization of elements, a dicing step of dividing a microfabricated wafer into individual chips, and a bonding step of fixing the chips to a chip container and connecting the lead terminals of the container to the bump electrodes of the chips with a fine wire. Is used.

[0003]

2. Description of the Related Art FIG. 5 is a diagram for explaining a conventional method of manufacturing a semiconductor device. In FIG. 5, 31 is a substrate such as Si, 32 is an insulating film such as SiO ₂ formed on the substrate 31, and 33 is a wiring layer pattern such as Al formed on the insulating film 32. Next, 34 is an insulating film having an opening 34a in which the wiring layer pattern 33 is exposed, and 35 to 37 are openings 34a.
These are bump electrodes made of Ti film, Pd film, Au, etc., which are sequentially formed so as to make contact with the wiring layer pattern 33 therein. Further, 38 is a resist mask for forming the bump electrode 37 having an opening 38a where the Pd film 36 is exposed, and 39 is an adhesive tape composed of an adhesive 39a and a base material 39b. The Ti film 35 is formed as a barrier film for preventing Au of the upper bump electrode 37 and Al of the lower wiring layer pattern 33 from diffusing and reacting, and the Pd film 36 is plated with Au to form the bump electrode. It is formed as a plating electrode when forming 37.

Next, a method of manufacturing the semiconductor device will be described. First, as shown in FIG. 5A, an SiO ₂ insulating film 32 is formed on a Si substrate 31 by a CVD method or the like, and Al is deposited on the insulating film 32 by a sputtering method or the like to form an Al film. The Al film is etched by RIE or the like to form the wiring layer pattern 33. Next, SiO ₂ is deposited on the entire surface by a CVD method or the like to form an insulating film 34, and the insulating film 34 is etched by RIE or the like to form an opening 34a in which the wiring layer pattern 33 is exposed. The Ti film 35 is formed so as to make contact with the wiring layer 33 in the opening 34a.
And a Pd film 36 is formed. Next, resist patterning is performed by a photolithography process so that a region other than the region corresponding to the bump electrode remains to form a resist mask 38 having an opening 38a in which the Pd film 36 is exposed, and then this resist mask 38 is used. , Pd film 36 is used as a plating electrode, and Au is plated on the Pd film 36 in the opening 38a by Au plating.
The bump electrode 37 is formed.

Next, as shown in FIG. 5B, after removing the resist mask 38, the Pd film 36 and the Ti film 35 are left only under the bump electrode 37 using the bump electrode 37 as a mask. 36 and the Ti film 35 are etched to expose the insulating film 34. Then, as shown in FIG. 5C, an adhesive tape 39 for dicing is attached to the Pd film 36, and the dicing process is performed in the attached state to separate the chips, and then the bump electrode 37 and the ILB electrode 40 are separated from each other by ILB. By processing and bonding, a semiconductor device as shown in FIG. 5D can be obtained.

However, in this conventional semiconductor device manufacturing method, the adhesive tape 39 is used as the bump electrode as described above.
When the dicing process is performed with the product stuck to 37,
As shown in (d), the fragments of the adhesive 39 of the adhesive tape 39 during the dicing process drop onto the insulating film 34 between the bump electrodes 37 and are easily attached to the adhesive 39a. Si pieces and the like tend to adhere. Specifically, an adhesive is applied to the overhanging portion of the bump electrode 37.
39a remains. As described above, when the Si tape is adhered to the adhesive film 39 on the insulating film 34 and the ILB process or the like is performed, the bump electrodes 37 leak through the Si tape. was there.

Therefore, conventionally, the above problem is solved by embedding an insulating film between the bump electrodes 37. For this insulating film, a photosensitive polyimide that is strong against α rays is used. This photosensitive polyimide is formed by a coating method which has the advantage that it can be easily formed into a thick film. The coating method is used to form SiO ₂ or the like by using a deposition method such as a CVD method. This is because the method requires a very long growth time to fill the space between the bump electrodes 37 of thick film (about 20 μm), which is not preferable in practice. Hereinafter, a specific description will be given with reference to the drawings.

FIG. 6 is a diagram for explaining another conventional method of manufacturing a semiconductor device. 6, the same reference numerals as those in FIG. 5 indicate the same or corresponding portions, and 41 is a photosensitive polyimide. Next, a method of manufacturing the semiconductor device will be described. Here, from the formation of the insulating film 32 to the Pd film 36 and the Ti film.
The steps up to etching 35 are the same as in FIG.

First, as shown in FIG. 6 (a), photosensitive polyimide 41 is applied to the entire surface, and as shown in FIG. 6 (b),
Photosensitive polyimide 41 so that the space between bump electrodes 37 is completely filled by exposure and development, and remains on bump electrodes 37.
To pattern. In this case, the photosensitive polyimide 41 is accurately aligned with the alignment mask between the bump electrodes 37.
It is very difficult to form the film in the current process as it is miniaturized, and in consideration of the alignment margin, it is necessary to form even on the photosensitive polyimide 41 as described above. Even if the bump electrodes 37 can be formed, if they are formed so as to be below the upper surface of the bump electrode 37 or so as to be aligned with the upper surface of the bump electrode 37, the ILB
The problem of leak at the time of processing cannot be solved. From now on, the photosensitive polyimide 41 must be formed even on the bump electrodes 37.

Next, the photosensitive polyimide 41 is cured as shown in FIG. 6 (c). At this time, the photosensitive polyimide 41
Heat-shrinks, the central part shown in the figure becomes a concave part, and the corner part becomes a convex part. Then, as shown in FIG. 6 (c), an adhesive tape 39 for dicing is adhered onto the photosensitive polyimide 41, and the dicing process is performed in the adhered state to separate each chip, and then the bump electrode 37 and the ILB electrode 40 are separated. By performing an ILB process and bonding, a semiconductor device as shown in FIG. 6D can be obtained.

In this conventional method for manufacturing a semiconductor device, since the bump electrodes 37 are filled with the insulating photosensitive polyimide 41, the problem of the leak between the bump electrodes 37 as described above can be solved. Has the advantage.

[0012]

However, in the conventional method for manufacturing a semiconductor device shown in FIG. 6 described above, the adhesive tape 39 is attached to the photosensitive polyimide 41 formed even on the bump electrodes 37 and the dicing process is performed. Therefore, the fragments of the adhesive 39a tend to adhere to the exposed bump electrodes 37 between the photosensitive polyimides 41, and if the ILB processing is performed with the fragments of the adhesive 39a adhered on the bump electrodes 37, the bump electrodes 37 There is a problem that a contact failure between 37 and the ILB electrode 40 is likely to occur. For this reason, it is considered that the photosensitive polyimide 41 and the bump electrodes 37 may be formed lower than the upper surfaces thereof. It is very difficult to form, and even if it could be formed,
This causes a problem of leakage between the bump electrodes 37.

When the photosensitive polyimide 41 is cured, it undergoes heat shrinkage, but its central portion becomes a concave portion and its corner portions become a convex portion, and the occurrence thereof is not uniform due to the influence of the atmosphere. Therefore, if the ILB electrode 40 having a small width is used so as to enter the openings between the photosensitive polyimides 41, the upper surface of the photosensitive polyimide 41 (especially the convex portion of the corner) is inevitably protruded from the upper surface of the ILB electrode 40. Part will be generated. Since the ILB includes a component portion wider than the ILB electrode 40 portion, this wider component portion hits the protruding portion of the photosensitive polyimide 41, and as a result, as shown in FIG. However, there is a problem in that the ILB electrode 40 cannot be placed on the bump electrode 37 between the photosensitive polyimides 41 even if the ILB electrode 40 having a small bending width is used.

Therefore, it is conceivable that the upper surface of the photosensitive polyimide 41 should be below the upper surface of the bump electrode 37 so that the upper surface of the photosensitive polyimide 41 does not come onto the bump electrode 37. However, the problem occurs as described above. Therefore, the present invention provides a method for manufacturing a semiconductor device which can prevent leakage between bump electrodes and can surely make contact without causing contact failure between the bump electrode and the ILB electrode. It is an object.

[0015]

In order to achieve the above object, a method of manufacturing a semiconductor device according to the present invention comprises a step of forming a conductive region and an insulating region on a base film, and then a step of forming the conductive region on the insulating region. Forming a first mask pattern having a first opening in which the conductive region is exposed in a region other than the region where the bump electrode is formed, and then using the first mask pattern as a mask, The conductive area is used as a plating electrode,
A step of forming a first bump electrode on the conductive region by plating so as to fill the inside of the first opening, and then,
A second opening having a width wider than the first mask pattern width from above the first mask pattern to above the first bump electrode and having a second opening through which the first bump electrode is exposed. A step of forming a mask pattern, and then, using the second mask pattern as a mask, the first bump electrode as a plating electrode, and plating the second bump pattern on the first bump electrode so as to fill the inside of the second opening. A step of forming a second bump electrode having a width smaller than the first bump electrode width,
Next, a step of removing the first and second mask patterns, a step of forming a photosensitive polyimide on the entire surface, and a step of filling the space between the first bump electrodes by exposure and development and a step of forming the second bump electrode. Patterning the photosensitive polyimide so that it remains on the second bump electrodes between the bump electrodes, and then heat-treating the photosensitive polyimide to form an upper surface of the first bump electrodes and the second bump electrodes. And heat shrinking so that the upper surface of the photosensitive polyimide lies between the upper surfaces of the bump electrodes.

In order to achieve the above object, the method of manufacturing a semiconductor device according to the present invention comprises the steps of forming a conductive region and an insulating region on a base film, and then forming a first photosensitive organic film and the first photosensitive organic film on the entire surface. A step of sequentially forming a second photosensitive organic film having a different photosensitivity from that of the first photosensitive organic film, and then exposing and developing the second photosensitive organic film in a region other than a region where the bump electrode is formed on the insulating region. One photosensitive organic film pattern and a second photosensitive organic film pattern having a width smaller than the width of the first photosensitive organic film pattern are formed, and the conductive property is provided between the first photosensitive organic film patterns. A step of forming a second opening having a width smaller than the width of the first opening between the first opening and the second photosensitive organic film pattern where the region is exposed; Using the second photosensitive organic film pattern as a mask, the conductive region is plated. An electrode, first by plating,
Forming a bump electrode having an upper portion having a width smaller than that of the lower portion on the conductive region so as to fill the second opening;
Next, a step of removing the first and second photosensitive organic film patterns, a step of forming a photosensitive polyimide on the entire surface, and a step of filling the space between the lower portions of the bump electrodes having a large width by exposure and development, And, the step of patterning the photosensitive polyimide so that it remains between the upper portions of the small bump electrode width, and then by subjecting the photosensitive polyimide to heat treatment, the upper upper surface of the smaller bump electrode width and the larger upper portion of the bump electrode width. And heat-shrinking the photosensitive polyimide so that the upper surface of the photosensitive polyimide lies between the upper surfaces of the lower portions.

[0017]

In the present invention, as shown in FIGS. 1 and 2 of Example 1 described later, a bump electrode 10 having a width smaller than the width of the bump electrode 7 is formed on the bump electrode 7, and the photosensitive polyimide applied on the entire surface. After patterning 11 between the bump electrodes 7 by exposure and development and leaving the bump electrodes 10 between the bump electrodes 7, the photosensitive polyimide 11 is cured to allow a space between the bump electrode 7 upper surface and the bump electrode 10 upper surface. It is heat-shrinked so that the upper surface of the photosensitive polyimide 11 comes to the top. Since the upper surface of the photosensitive polyimide 11 is located below the upper surface of the bump electrode 10 in this manner, the dicing processing adhesive tape 12 can be attached to the bump electrode 10 for dicing processing. Even if the polyimide is above the bump electrode 10, the dicing process can be performed by sticking the adhesive tape for dicing process. Therefore, the adhesive tape on the bump electrode 10 generated during the dicing process accompanying the formation of the photosensitive polyimide 11 even on the bump electrode 10.
It is possible to prevent the adhesion of 12 pieces. Moreover, even if the width of the ILB electrode 13 is wider than the width between the photosensitive polyimides 11, since the upper surface of the photosensitive polyimide 11 is lower than the upper surface of the bump electrode 10, the bump electrode 10 and the ILB electrode 13 are
Can be reliably contacted. Since the adhesive tape 12 attached to the bump electrode 10 is a UV tape, it can be completely peeled off by UV irradiation.

Since the bump electrode IC can be easily formed as a thick film having a thickness of 20 μm, the upper surface of the photosensitive polyimide 11 is bumped by appropriately adjusting the coating thickness of the photosensitive polyimide 11, heat treatment conditions and the like. It can be easily formed so as to be located between the upper surface of the electrode 10 and the upper surface of the bump electrode 7.
Further, the photosensitive polyimide 11 does not need to be accurately aligned between the bump electrodes 10, and also need not be accurately aligned between the bump electrodes 7. The point is that the gaps between the bump electrodes 7 need to be completely embedded, and the bump electrodes 7 need to be formed so as to remain on the bump electrodes 7. Should be taken into consideration. Therefore, the photosensitive polyimide
Since 11 is formed on the bump electrode 7 so as to be separated from the bump electrode 10, it is possible to prevent the leak between the bump electrodes 7 in the dicing process, which has been a problem in the past, and the photosensitive polyimide 11 Adhesive 12a on top of adhesive tape 12
Even if the debris adheres, the photosensitive polyimide 11 and the bump electrode 10 are separated from each other as described above, so that no leak occurs between the bump electrodes 10.

[0019]

(Embodiment 1) The present invention will be described below with reference to the drawings. 1 and 2 are views for explaining a method of manufacturing a semiconductor device according to the first embodiment of the present invention. In FIGS. 1 and 2, 1 is a substrate such as Si, 2 is an insulating film such as SiO ₂ formed on the substrate 1, and 3 is a wiring layer pattern such as Al formed on the insulating film 2. is there. Next, 4 is an insulating film having an opening 4a in which the wiring layer pattern 3 is exposed, and 5 to 7 are a Ti film and a Pd film, which are sequentially formed so as to contact the wiring layer pattern 3 in the opening 4a. ,
Reference numeral 8 denotes a bump electrode made of Au or the like, and reference numeral 8 denotes a resist mask for forming the bump electrode 7 having an opening 8a where the Pd film 6 is exposed. Next, 9 is a width wider than the resist mask 8 width from above the resist mask 8 to above the bump electrode 7,
The bump electrode 7 is a resist mask having an opening 9a exposed, 10 is a bump electrode having a width smaller than the width of the bump electrode 7 formed on the bump electrode 7, and 11 is embedded between the bump electrodes 7. The photosensitive polyimide is formed between the bump electrodes 10 up to the bump electrodes 7, and the upper surface thereof is located between the upper surfaces of the bump electrodes 7 and the bump electrodes 10. Further, 12 is an adhesive tape for dicing which is composed of the adhesive 12a and the base material 12b, and 13 is an ILB electrode for contacting the bump electrodes 7 and 10. In addition, the Ti film 5 is the A of the bump electrodes 7 and 10 on the upper surface.
It is formed as a barrier film for preventing u and Al of the lower wiring layer pattern 33 from diffusing and reacting, and the Pd film 6 is formed as a plating electrode when the bump electrode 7 is formed by Au plating. There is.

Next, a method of manufacturing the semiconductor device will be described. First, as shown in FIG. 1A, SiO ₂ is deposited on a substrate 1 by a CVD method or the like to form an insulating film 2 having a film thickness of 1.0 μm, and an Al film is formed on the insulating film 2 by a sputtering method or the like.
Is deposited to form an Al film having a thickness of 1.5 μm, and then RIE is performed.
The Al film is etched by the above method to form the wiring layer pattern 3. Next, SiO ₂ is deposited on the entire surface by a CVD method or the like to form an insulating film 4 having a film thickness of 1.0 μm, and the insulating film 4 is etched by RIE or the like to form an opening 4a in which the wiring layer pattern 3 is exposed. After that, a Ti film 5 with a film thickness of 500Å and a Pd film 6 with a film thickness of 500Å are formed by sputtering so as to make contact with the wiring layer pattern 3 in the opening 4a. Next, a resist is applied on the entire surface, and resist patterning is performed by exposure and development so that a region other than the region where the bump electrode is formed remains, thereby forming a resist mask 8 having an opening 8a in which the Pd film 6 is exposed. Then, using this resist mask 8, the Pd film 6 in the opening 8a is used as a plating electrode, and an Au bump electrode 7 having a width of 50 μm and a thickness of 20 μm is formed on the Pd film 6 in the opening 8a by Au plating.

Next, as shown in FIG. 1B, a resist is applied to the entire surface, resist patterning is performed by exposure and development, and the width from the resist mask 8 to the bump electrode 7 is wider than the resist mask 8 width. A resist mask 9 having a width and an opening 9a where the bump electrode 7 is exposed is formed. Next, the resist mask 9 is used as a mask, the bump electrode 7 is used as a plating electrode, and the opening 9a is filled with Au plating on the bump electrode 7 so as to have a width smaller than the width of the bump electrode 7 and a thickness of 5 μm. The Au bump electrode 10 is formed.

Next, as shown in FIG. 1C, after removing the resist masks 8 and 9 by O ₂ ashing or the like, the bump electrodes 7 and 10 are masked and the Pd film 6 and the Ti film 5 are formed by RIE or the like. To expose the insulating film 4. At this time, the Pd film 6 and the Ti film 5 remain only under the bump electrode 7. Next, as shown in FIG. 1D, after applying the photosensitive polyimide 11 on the entire surface, as shown in FIG. 2E, the photosensitive polyimide 11 is embedded between the bump electrodes 7 by exposure and development. In addition, patterning is performed so as to remain on the bump electrodes 7 between the bump electrodes 10.

Next, as shown in FIG. 2 (f), the photosensitive polyimide 11 is cured at 350 ° C. for 120 minutes, whereby the photosensitive polyimide 11 is cured between the upper surface of the bump electrode 7 and the upper surface of the bump electrode 10.
11 Heat shrink so that the top surface comes up. And FIG. 2 (g)
Adhesive tape 12 for dicing processing is attached on the bump electrodes 10 as shown in FIG. 1, and after the adhesive tape 12 is attached, dicing processing is performed to separate the chips into bump electrodes.
The semiconductor device as shown in FIG. 2H can be obtained by subjecting the ILB electrode 13 and the ILB electrode 13 to ILB treatment and bonding.

As described above, in this embodiment, the bump electrode 7
The bump electrode 10 having a width smaller than the width of the bump electrode 7 is formed on the bump electrode 7, and the photosensitive polyimide 11 applied on the entire surface is exposed and developed to fill the space between the bump electrodes 7 and
After patterning so as to remain on the bump electrodes 7 between
The photosensitive polyimide 11 is cured and heat-shrinked so that the upper surface of the photosensitive polyimide 11 is located between the upper surfaces of the bump electrodes 7 and the bump electrodes 10. In this way, the photosensitive polyimide 11
Since the upper surface is located below the upper surface of the bump electrode 10, the adhesive tape 12 for dicing processing can be attached to the bump electrode 10 for dicing processing. For this reason, it is possible to prevent the debris of the adhesive 12a from adhering to the bump electrodes 10 during the dicing process, which is caused by forming the photosensitive polyimide 11 even on the bump electrodes 10. Moreover, even if the width of the ILB electrode 13 is wider than the width between the photosensitive polyimides 11, since the upper surface of the photosensitive polyimide 11 is lower than the upper surface of the bump electrode 10, the bump electrode 10 and the IL
The B electrode 13 can be surely contacted.

Further, in this embodiment, since the bump electrode 10 can be easily formed as a thick film having a thickness of 5 μm, it is possible to adjust the coating thickness of the photosensitive polyimide 11, heat treatment conditions, etc. Conductive polyimide 11 Top surface is bump electrode 10
It can be easily formed so as to be located between the upper surface and the upper surface of the bump electrode 7. Further, the photosensitive polyimide 11 does not need to be accurately aligned between the bump electrodes 10, and also need not be accurately aligned between the bump electrodes 7. The point is that the bump electrodes 7 can be completely embedded and formed so as to remain on the bump electrodes 7. Therefore, a positioning margin can be provided within a range that is larger than the width of the bump electrodes 7 and smaller than the width between the bump electrodes 10. You should consider it. Therefore, since the photosensitive polyimide 11 is formed on the bump electrodes 7 so as to be separated from the bump electrodes 10, it is possible to prevent the leakage between the bump electrodes 7 in the dicing process which has been a conventional problem. In addition, even if a piece of the adhesive 12a of the adhesive tape 12 adheres to the photosensitive polyimide 11, since the photosensitive polyimide 11 and the bump electrode 10 are separated from each other as described above, the bump electrode
It will not leak between 10 minutes. (Embodiment 2) FIGS. 3 and 4 are views for explaining a method of manufacturing a semiconductor device according to Embodiment 2 of the present invention. In FIGS. 3 and 4, 15 is a substrate such as Si, 16 is an insulating film such as SiO ₂ formed on the substrate 15, and 17 is a wiring layer pattern such as Al formed on the insulating film 16. is there. Next, 18 is an insulating film having an opening 18a in which the wiring layer pattern 17 is exposed, and 18 to 20 are Ti film and Pd film respectively formed so as to contact with the wiring layer pattern 17 in the insulating film 18. , A
u is a bump electrode such as u, 21 is a high-sensitivity positive photosensitive resist, and 22 is a lower-sensitive positive photosensitive resist than the photosensitive resist 21 formed on the photosensitive resist 21. . Next, 21a is a resist pattern having an opening 21b in which the Pd film 20 formed by patterning the photosensitive resist 21 is exposed, and 22a has a width smaller than the width of the resist pattern 21a formed by patterning the resist 22. Reference numeral 23 is a resist pattern having an opening 22b, and 23 is a bump electrode whose upper portion has a width smaller than that of the lower portion. The bump electrodes 23 are embedded between the lower portions of the bump electrodes 23 having a large width, and are formed up to the upper surface of the lower portions of the bump electrodes 23 having a large width between the upper portions of the bump electrodes 23 having a small width. And the bump electrode 23 is a photosensitive polyimide formed so as to be located between the upper surface of the small width. Further, 25 is an adhesive tape for dicing, which is composed of the adhesive 25a and the base material 25b, and 26 is an ILB electrode for contacting with the bump electrode 23. The Ti film
19 is Au of the bump electrode 23 of the upper layer and the wiring layer pattern of the lower layer
17 is formed as a barrier film for preventing Al from diffusing and reacting, and the Pd film 20 is plated with Au to form the bump electrode 23.
It is formed as a plating electrode when forming.

Next, a method of manufacturing the semiconductor device will be described. First, as shown in FIG. 3A, SiO ₂ is deposited on the Si substrate 15 by the CVD method or the like to obtain a film thickness of 1.0 μm.
Is formed on the insulating film 16 by a sputtering method or the like to form an Al film having a thickness of 1.3 μm.
Wiring layer pattern 17 by etching the Al film by IE or the like
To form. Then, SiO _{2 is formed on the} entire surface by CVD or the like.
Is deposited to form an insulating film 18 having a film thickness of 1.0 μm, the insulating film 18 is etched by RIE or the like to form an opening 18a in which the wiring pattern 17 is exposed, and then the wiring in the opening 18a is formed by a sputtering method. A Ti film 19 having a film thickness of 500Å and a Pd film 20 having a film thickness of 500Å are formed so as to make contact with the layer pattern 17. Next, after a positive resist 21 having a high sensitivity is applied on the entire surface, a positive resist 22 having a lower sensitivity than the resist 21 is formed on the resist 21.

Next, as shown in FIG. 3B, the resists 21 and 22 are patterned by exposure and development to form a resist pattern 21a having a width of 50 μm and a resist pattern 21a width in a region other than a region where bump electrodes are formed. A resist pattern 22a having a width smaller than that of 40 μm is formed. At this time, the opening 21b exposing the Pd film 20 between the resist patterns 21a and the opening 22b having a width smaller than the width of the opening 21b is formed between the resist patterns 22a.

Next, the resist patterns 21a and 22a are used as masks, the Pd film 20 is used as a plating electrode, and an opening is formed by plating.
An upper portion (width 40 mm) is formed on the Pd film 20 so as to fill the insides of 21b and 22b.
bump electrode whose width (μm) is smaller than the lower part (width 50 μm)
Form 23. At this time, the film thickness of the lower portion of the bump electrode 23 having a large width is 15 μm, and the film thickness of the upper portion having a small width is 5 μm.
Is.

Next, as shown in FIG. 3C, after removing the resist patterns 21a _and 22a by O ₂ ashing or the like, the Pd film is formed by RIE or the like using the bump electrode 23 as a mask.
20 and the Ti film 19 are etched to expose the insulating film 18. At this time, the Pd film 20 and the Ti film are provided only under the bump electrode 23.
19 remains. Next, as shown in FIG. 3D, after applying the photosensitive polyimide 24 on the entire surface, as shown in FIG.
The photosensitive polyimide 24 is patterned by exposure and development so that the lower part of the bump electrode 23 having a large width is filled and the upper part of the bump electrode 23 having a small width is left on the upper part having a small width.

Next, as shown in FIG. 4 (f), the photosensitive polyimide 24 is cured at 350 ° C. for 120 minutes so that a space between the upper upper surface of the bump electrode 23 having a smaller width and the lower upper surface of the bump electrode 23 having a large width is obtained. Heat-shrink so that the upper surface of the photosensitive polyimide 24 comes. Then, as shown in FIG. 4 (g), an adhesive tape 25 for dicing is attached to the bump electrodes 23, and the adhesive tape 25 is attached to the bump electrodes 23 after dicing to separate the chips into chips. ILB electrode 26
By performing the ILB treatment on and bonding
A semiconductor device as shown in (h) can be obtained.

Thus, in this embodiment, the bump electrode 23
The width of the upper part is smaller than the width of the lower part,
After patterning the photosensitive polyimide 24 coated on the entire surface by exposing and developing so as to fill the space between the lower portions of the bump electrode 23 having a large width and to leave the upper portion of the bump electrode 23 having a small width on the lower portion of the bump electrode 23 having a large width. , The photosensitive polyimide 24 is cured, and the photosensitive polyimide 24 is interposed between the lower upper surface of the bump electrode 23 having a larger width and the upper upper surface of the bump electrode 23 having a smaller width.
Heat shrink so that the top surface comes. Since the upper surface of the photosensitive polyimide 24 is located below the upper surface of the bump electrode 23 having a small width in this manner, the dicing processing adhesive tape 25 can be attached to the bump electrode 23 having a small width to perform the dicing processing. . Therefore, the photosensitive polyimide 24 is formed even on the upper portion of the bump electrode 23 having a smaller width, so that the adhesion of the fragments of the adhesive 25a on the upper portion of the bump electrode 23 having a smaller width that occurs during the dicing process is prevented. be able to. Moreover, even if the width of the ILB electrode 26 is wider than the width between the photosensitive polyimides 24,
Since the upper surface of the bump electrode 23 is lower than the upper surface of the bump electrode 23 having a small width, the bump electrode 23 has a small width and the ILB electrode 26.
Can be surely contacted.

Further, in this embodiment, since the upper portion of the bump electrode 23 having a small width can be easily formed as a thick film having a thickness of 5 μm, the coating thickness of the photosensitive polyimide 24, the heat treatment conditions, etc. should be adjusted appropriately. Thus, the upper surface of the photosensitive polyimide 24 can be easily formed so as to be located between the upper upper surface having the smaller width of the bump electrode 23 and the lower upper surface having the larger width of the bump electrode 23. Further, the photosensitive polyimide 24 does not need to be accurately aligned between the upper portions having a small width of the bump electrodes 23, and further, need not be accurately aligned between the lower portions having a large width of the bump electrodes 23. The point is that the space between the lower portions of the bump electrode 23 having a large width can be completely filled and the bump electrode 23 can be formed so as to remain on the upper portion of the small width of the bump electrode 23. The alignment margin may be taken into consideration within a range smaller than the width between the lower portions having a large width. Therefore, since the photosensitive polyimide 24 is formed on the upper portion of the bump electrode 23 having a larger width apart from the upper portion of the bump electrode 23 having a smaller width, the photosensitive polyimide 24 is formed between the lower portion of the bump electrode 23 having a large width in the conventional dicing process. In addition to preventing the leak of the photosensitive polyimide 24
Even if a piece of the adhesive 25a of the adhesive tape 25 adheres to the upper portion of the bump electrode 23, since the photosensitive polyimide 24 and the upper portion of the bump electrode 23 having a smaller width are separated from each other as described above, leakage occurs between the upper portions of the bump electrode 23 having a smaller width. Nothing.

In the second embodiment, positive resists are used as the resists 21 and 22, a highly sensitive resist 21 is used, and a low sensitive resist 22 is used. However, the present invention is not limited to this. It is not limited to this,
Negative type resists may be used as the resists 21 and 22, and in this case, the resist 21 having low sensitivity is used.
A high-sensitivity one may be used.

[0034]

According to the present invention, it is possible to prevent leakage between the bump electrodes and to reliably contact the bump electrodes without causing contact failure of the ILB electrodes. is there.

[Brief description of drawings]

FIG. 1 is a diagram illustrating a method of manufacturing a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a diagram illustrating a method of manufacturing a semiconductor device according to the first embodiment of the present invention.

FIG. 3 is a diagram illustrating a method of manufacturing a semiconductor device according to the second embodiment of the present invention.

FIG. 4 is a diagram illustrating a method of manufacturing a semiconductor device according to the second embodiment of the present invention.

FIG. 5 is a diagram illustrating a method for manufacturing a conventional semiconductor device.

FIG. 6 is a diagram illustrating another conventional method for manufacturing a semiconductor device.

FIG. 7 is a diagram illustrating a problem of the conventional method for manufacturing the semiconductor device shown in FIG.

[Explanation of symbols]

 1,15 substrate 2,4,16,18 insulating film 3 wiring layer pattern 4a, 8a, 9a resist pattern 5,19 Ti film 6,20 Pd film 7,10,23 bump electrode 8,9,21,22 resist mask 11,24 Photosensitive polyimide 12,25 Adhesive tape 12a, 25a Adhesive 12b, 25b Base material 13,26 ILB electrodes 18a, 21b, 22b Openings 21a, 22a Resist pattern

Claims (2)

[Claims] 1. A conductive region (3, 3) formed on a base film (2).
5, 6) and a step of forming an insulating region (4), and then the conductive region (6) is exposed in a region other than the region where the bump electrode is formed on the insulating region (4). Forming a first mask pattern (8) having a first opening (8a), and then using the first mask pattern (8) as a mask,
The conductive region (6) is used as a plating electrode, and the first electrode is formed by plating.
Forming a first bump electrode (7) on the conductive region (6) so as to fill the opening (8a) of the first mask pattern (8). A second opening (9a) having a width wider than the width of the first mask pattern (8) over the bump electrode (7) and exposing the first bump electrode (7).
And a step of forming a mask pattern (9) of
The first bump electrode (7) is used as a plating electrode, and the first bump electrode (7) is formed on the first bump electrode (7) so as to fill the inside of the second opening (9a) by plating. A step of forming the second bump electrode (10) having a width smaller than the width, a step of removing the first and second mask patterns (8, 9), and a photosensitive polyimide ( 11) is formed, and then the first bump electrodes (7) are filled with the second bump electrodes (10) by exposing and developing.
Patterning the photosensitive polyimide (11) so that the photosensitive polyimide (11) is left on the bump electrode (7), and then heat-treating the photosensitive polyimide (11) to form an upper surface of the first bump electrode (7). And a step of heat-shrinking so that the upper surface of the photosensitive polyimide (11) is located between the upper surfaces of the second bump electrodes (10). 2. A conductive region (17, 1) formed on the underlying film (16).
9, 20) and an insulating region (18) are formed, and then a first photosensitive organic film (21) and a second photosensitive organic film (21) having a different photosensitivity over the entire surface. Forming a photosensitive organic film (21) in sequence, and then exposing and developing the first photosensitive organic film pattern in a region other than the region where the bump electrode is formed on the insulating region (18). (21a) and a second photosensitive organic film pattern (22a) having a width smaller than the width of the first photosensitive organic film pattern (21a), and at the same time, the first photosensitive organic film pattern (21a) A width smaller than the width of the first opening (21b) is provided between the first opening (21b) and the second photosensitive organic film pattern (22a) where the conductive region (20) is exposed. A step of forming a second opening (22b), and then the first and second photosensitive organic film patterns (21a,
22a) is used as a mask, the conductive region (20) is used as a plating electrode, and an upper part is formed on the conductive region (20) so as to fill the inside of the first and second openings (21b, 22b) by plating. A step of forming bump electrodes (23) having a width smaller than that of the lower part, and then the first and second photosensitive organic film patterns (21a,
22a), then a step of forming a photosensitive polyimide (24) on the entire surface, and then, by exposing and developing, filling the lower part of the bump electrode (23) having a large width and ) A step of patterning the photosensitive polyimide (24) so that it remains between the upper portions having a small width, and then, by subjecting the photosensitive polyimide (24) to a heat treatment, an upper upper surface having a small width of the bump electrodes (23). And a step of heat-shrinking the photosensitive polyimide (24) so that the upper surface of the photosensitive polyimide (24) is located between the lower upper surfaces of the bump electrodes (23) having a large width. .