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JPH065671B2 - Immersion type substrate processing equipment - Google Patents

Immersion type substrate processing equipment

Info

Publication number
JPH065671B2
JPH065671B2 JP63094292A JP9429288A JPH065671B2 JP H065671 B2 JPH065671 B2 JP H065671B2 JP 63094292 A JP63094292 A JP 63094292A JP 9429288 A JP9429288 A JP 9429288A JP H065671 B2 JPH065671 B2 JP H065671B2
Authority
JP
Japan
Prior art keywords
pressure chamber
substrate processing
substrate
clean air
transfer robot
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP63094292A
Other languages
Japanese (ja)
Other versions
JPH01265519A (en
Inventor
久雄 西澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dainippon Screen Manufacturing Co Ltd
Original Assignee
Dainippon Screen Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dainippon Screen Manufacturing Co Ltd filed Critical Dainippon Screen Manufacturing Co Ltd
Priority to JP63094292A priority Critical patent/JPH065671B2/en
Publication of JPH01265519A publication Critical patent/JPH01265519A/en
Publication of JPH065671B2 publication Critical patent/JPH065671B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Description

【発明の詳細な説明】 《産業上の利用分野》 この発明は、半導体基板や液晶用ガラス基板等の薄板状
の基板を表面処理するのに用いられる浸漬式基板処理装
置に関し、特に、基板処理槽より発生する処理液蒸気の
排除につき、改良を加えた浸漬式基板処理装置に関する
ものである。
TECHNICAL FIELD The present invention relates to an immersion type substrate processing apparatus used for surface-treating a thin substrate such as a semiconductor substrate or a glass substrate for liquid crystal, and particularly to substrate processing. The present invention relates to an immersion type substrate processing apparatus, which is improved in terms of eliminating processing liquid vapor generated from a bath.

《従来の技術》 浸漬式の基板処理装置としては従来より、例えば第6図
に示すもの(以下従来例1という)、あるいは第7図に示
すもの(以下従来例2という)が知られている(半導体
基盤技術研究会編「高性能化プロセス技術II」昭和62年
7月30日発行)。
<< Prior Art >> As an immersion type substrate processing apparatus, for example, one shown in FIG. 6 (hereinafter referred to as Conventional Example 1) or one shown in FIG. 7 (hereinafter referred to as Conventional Example 2) is known. (Published July 30, 1987, "High Performance Process Technology II" edited by Semiconductor Technology Research Group).

従来例1は、多連に配置した基板処理槽102と、基板
処理槽102の上方に設けられた清浄気流下手段110
と、清浄気流下手段110の下に形成される清浄気流通
空間108内を当該基板処理槽102の並びに沿つて
(第6図紙面垂直方向へ)移動可能に設けられた基板搬送
ロボット120と、各基板処理槽102の近傍に多連に
配置した強制排気口128とを備えて成り、清浄気流下
手段110により清浄気流通空間108へ向けて清浄気
(以下、クリーンエアという)を流下させてダウンフロー
Fを形成し、基板処理槽102より発生する処理液蒸気
をダウンフローFにのせて強制排気口128より排気す
るように構成されている。なお第6図中符号125は多
数の基板Wを収容した基板収容カセット、114は清浄
気流通空間108を外部空間より仕切る前面カバーであ
る。
In the conventional example 1, a plurality of substrate processing baths 102 are arranged, and a clean air flow down means 110 provided above the substrate processing baths 102.
And the inside of the clean air circulation space 108 formed below the clean air flow means 110 along the alignment of the substrate processing bath 102.
The substrate transfer robot 120 is provided so as to be movable (in the direction perpendicular to the paper surface of FIG. 6), and the forced exhaust ports 128 are arranged in multiples in the vicinity of each substrate processing tank 102. Clean air toward clean air distribution space 108
(Hereinafter, referred to as clean air) is flowed down to form the downflow F, and the processing liquid vapor generated from the substrate processing bath 102 is placed on the downflow F and exhausted from the forced exhaust port 128. In FIG. 6, reference numeral 125 is a substrate storage cassette that stores a large number of substrates W, and 114 is a front cover that partitions the clean air circulation space 108 from the external space.

一方、従来例2は上記のものよりクリーンエアの消費量
を節約するため、給気量の小さい清浄気流下手段110
を設けるとともに、基板処理槽102の前方に清浄気吹
出口130を、後方を強制排気口128bをそれぞれ増
設し、基板処理槽102の上側にエアカーテンA・Cを
形成して、処理液蒸気の上昇を遮断するとともに、処理
液蒸気の大半をエアカーテンA・Cにのせて排気するよ
うに構成されている。
On the other hand, in Conventional Example 2, in order to save the consumption of clean air more than the above, the clean air flow lowering means 110 with a small air supply amount
In addition to the above, a clean air outlet 130 is added to the front of the substrate processing tank 102, and a forced exhaust port 128b is added to the rear of the substrate processing tank 102, and air curtains A and C are formed on the upper side of the substrate processing tank 102 to remove processing liquid vapor. In addition to blocking the rise, most of the processing liquid vapor is placed on the air curtains A and C and exhausted.

《発明が解決しようとする課題》 上記のうち、従来例1は、清浄気流通空間108内にお
いて、基板搬送ロボット120の近傍では、当該基板搬
送ロボット120にダウンフローFが当つて乱流が起こ
り、基板搬送ロボット120の駆動側部分121に処理
液蒸気が付着するという難点がある。
<< Problems to be Solved by the Invention >> Among the above, in Conventional Example 1, in the clean air circulation space 108, in the vicinity of the substrate transfer robot 120, the down flow F hits the substrate transfer robot 120 and a turbulent flow occurs. However, there is a drawback that the processing liquid vapor adheres to the driving side portion 121 of the substrate transfer robot 120.

一方、従来例2は、エアカーテンA・Cを形成して前記
難点をいくらか解消しているものの、それでもなお、基
板を基板搬送ロボット120によつて、次の処理槽内へ
順次搬送するために、基板収容カセット125をエアカ
ーテンA・Cよりも上方へ持ち上げる際、当該基板収容
カセツト125の持ち上げに伴つて処理液蒸気が多量に
上昇することになる。このようにして上昇した処理液蒸
気が基板搬送用ロボット120の駆動側部分121等に
付着すると、導電接触部の侵食により故障の原因にもな
る。そこで上記どちらの従来例とも、清浄気流下手段1
10によるダウンフローFをある程度強力にする必要が
あり、ランニングコストが高くつく。
On the other hand, in Conventional Example 2, although the air curtains A and C are formed to solve some of the above problems, the substrate transfer robot 120 still allows the substrates to be sequentially transferred into the next processing tank. When the substrate accommodating cassette 125 is lifted above the air curtains A and C, a large amount of the processing liquid vapor rises as the substrate accommodating cassette 125 is lifted. If the processing solution vapor that has risen in this way adheres to the drive-side portion 121 and the like of the substrate transfer robot 120, it may cause a failure due to the erosion of the conductive contact portion. Therefore, in both of the above conventional examples, the clean air flow means 1
It is necessary to strengthen the downflow F by 10 to a certain extent, and the running cost is high.

また、ダウンフローFが強過ぎると清浄気流通空間8内
がクリーンルーム等の外部空間に対して正圧となり、処
理液蒸気が前面カバー114の隙間から漏れ出ることに
なる。
If the downflow F is too strong, the inside of the clean air circulation space 8 has a positive pressure with respect to the external space such as a clean room, and the processing liquid vapor leaks out from the gap of the front cover 114.

逆に、当該清浄気流通空間8内が負圧になれば、外部空
間よりパーティクルが侵入し、清浄気流下手段110に
より極めてクリーン度の高いダウンフローを形成してい
る意義が失われることになる。そこで給排気量のバラン
スのみならず、気密性も必要となる。
On the contrary, if the inside pressure of the clean air circulation space 8 becomes negative, the particles intrude from the external space, and the significance of forming the downflow having an extremely high cleanness by the clean air flow lowering means 110 is lost. . Therefore, not only the balance between the supply and exhaust amounts, but also the airtightness is required.

本発明はこのような事情に鑑みてなされたものであり、
第1の目的は給排気量のバランスや気密性について配慮
せずとも、処理液蒸気が外部に漏れ出たり、外部よりパ
ーティクルが侵入しないようにすること、第2の目的は
処理液蒸気が基板搬送ロボットの駆動側部分に付着しな
いようにすること、そして第3の目的は、全体としてラ
ンニングコストの低減を図ることにある。
The present invention has been made in view of such circumstances,
The first purpose is to prevent the processing solution vapor from leaking out or particles from entering from the outside, without considering the balance of supply / exhaust flow rate and airtightness, and the second purpose is to prevent the processing solution vapor from entering the substrate. The third purpose is to prevent the transfer robot from adhering to the drive side portion, and to reduce the running cost as a whole.

《課題を解決するための手段》 本発明は上記目的を達成するためになされたものであ
り、前記従来例1の装置を次のように改良したものであ
る。
<< Means for Solving the Problem >> The present invention has been made in order to achieve the above object, and is an improvement of the device of the prior art 1 as follows.

即ち、清浄気流通空間を当該浸漬式基板処理装置の外部
空間に対して正圧となる高圧室と、高圧室に対して低圧
となる低圧室とに区画形成し、基板処理槽を低圧室及び
その外側の高圧室で覆い、低圧室強制排気口を臨ませ、
基板搬送ロボットの駆動部を高圧室内に、基板搬送ロボ
ットの基板支持部を低圧室内に配置して構成したことを
特徴とするものである。
That is, the clean air circulation space is partitioned into a high pressure chamber that has a positive pressure with respect to the external space of the immersion type substrate processing apparatus and a low pressure chamber that has a low pressure with respect to the high pressure chamber. Cover it with a high pressure chamber on the outside and face the low pressure chamber forced exhaust port,
The drive unit of the substrate transfer robot is arranged in the high pressure chamber, and the substrate support unit of the substrate transfer robot is arranged in the low pressure chamber.

《作 用》 説明の便宜上第1〜第2図を参照して本発明の作用を説
明する。
<< Operation >> The operation of the present invention will be described with reference to FIGS.

本発明によれば、基板処理槽2・2…は外部空間に対し
て、内側より低圧室8b及び高圧室8aで覆われており、処
理液蒸気は、強制排気口28より排気されるので、高圧
室8a側へ漏れ出ることはない。
According to the present invention, the substrate processing tanks 2, 2, ... Are covered with the low pressure chamber 8b and the high pressure chamber 8a from the inside with respect to the external space, and the processing liquid vapor is exhausted from the forced exhaust port 28. It does not leak to the high pressure chamber 8a side.

一方、低圧室8bは外部空間に対して高圧室8aで覆われて
おり、外部空間よりパーティクルが内部へ侵入するのを
高圧室8aによつて阻止する。
On the other hand, the low-pressure chamber 8b is covered with the high-pressure chamber 8a with respect to the external space, and the high-pressure chamber 8a prevents particles from entering the interior from the external space.

また、基板搬送ロボット20はその駆動部21が高圧室
8a内に、その基板支持部22が低圧室8b内に配置されて
いるので、基板処理槽2・2…外への基板Wの搬出に際
して、多量に発生する処理液蒸気は高圧室8aより流入す
るクリーンエアによつて強制排気口28より排気され
る。これにより、当該ロボット20の駆動部21に処理
液蒸気が付着するおそれはない。
Further, in the substrate transfer robot 20, the drive unit 21 thereof has a high pressure chamber.
Since the substrate support portion 22 is disposed in the low pressure chamber 8b in 8a, a large amount of the processing liquid vapor is introduced from the high pressure chamber 8a when the substrate W is carried out to the outside of the substrate processing tanks 2, 2 ... The clean air is discharged from the forced exhaust port 28. As a result, there is no possibility that the processing liquid vapor will adhere to the drive unit 21 of the robot 20.

つまり、高圧室8aは処理液蒸気の漏出阻止、及び外部か
らのパーティクル侵入阻止という2つの作用をなす。
That is, the high-pressure chamber 8a has two functions of preventing leakage of the processing liquid vapor and preventing particles from entering from the outside.

《実施例》 第1図は本発明の第1の実施例を示す浸漬式基板処理装
置の要部縦断概要図、第2図はその装置の要部を破断し
て示す斜視図である。
<< Embodiment >> FIG. 1 is a schematic longitudinal sectional view of an essential part of an immersion type substrate processing apparatus showing a first embodiment of the present invention, and FIG. 2 is a perspective view showing an essential part of the apparatus in a broken manner.

これらの図において、符号1は浸漬式基板処理装置(以
下単に基板処理装置と称する)全体を示し、この基板処
理装置1は、左右方向に多連に配置した複数の基板処理
槽2・2…と、それらの基板処理槽2の上方に設けられ
た清浄気流下手段10と、清浄気流下手段10の下に形
成された清浄気流通空間8内を、当該基板処理槽2・2
…に沿つて左右に移動する基板搬送ロボット20と、基
板処理槽2・2…の近傍に多連に配置した強制排気口2
8とを備え、清浄気流通空間8を高圧室8aと低圧室8bと
に区画形成し、高圧室8aより低圧室8bへクリーンエアを
流入させて、基板処理槽2より発生する処理液蒸気を強
制排気口28より排気するように構成されている。な
お、低圧室8bは大気圧より高圧、低圧、あるいは同じ気
圧のいずれでもよく、少なくとも高圧室8aより低圧であ
ればよい。
In these drawings, reference numeral 1 denotes the whole of the immersion type substrate processing apparatus (hereinafter simply referred to as a substrate processing apparatus), and the substrate processing apparatus 1 has a plurality of substrate processing tanks 2, 2, ... The clean air flow means 10 provided above the substrate processing tank 2 and the clean air flow space 8 formed under the clean air flow means 10 are connected to the substrate processing tanks 2 and 2.
The substrate transfer robot 20 that moves to the left and right along with, and the forced exhaust ports 2 arranged in multiples in the vicinity of the substrate processing tanks 2.2.
8, the clean air circulation space 8 is divided into a high pressure chamber 8a and a low pressure chamber 8b, and clean air is introduced from the high pressure chamber 8a to the low pressure chamber 8b to remove the processing liquid vapor generated from the substrate processing tank 2. The forced exhaust port 28 is configured to exhaust air. The low-pressure chamber 8b may have a pressure higher than atmospheric pressure, a low pressure, or the same atmospheric pressure as long as it has a pressure lower than at least the high-pressure chamber 8a.

各基板処理槽2は、それぞれ区画して連設された排液槽
5・5…内に配置され、各基板処理槽2・2…にはその
底壁に給液管3が連結され、この給液管3によつて所要
の処理液4を供給してオーバーフローさせ、排液槽5の
ドレン6より排出された処理液4を精製して循環使用す
るように構成されている。
Each of the substrate processing tanks 2 is arranged in a drainage tank 5, 5, ... Which are partitioned and connected in series, and a liquid supply pipe 3 is connected to the bottom wall of each of the substrate processing tanks 2, 2. The processing liquid 4 is supplied through the liquid supply pipe 3 to cause the processing liquid 4 to overflow, and the processing liquid 4 discharged from the drain 6 of the drainage tank 5 is purified and circulated.

清浄気流下手段10は送風用ファン(図示せず)を内蔵
し、最上部に配置された給気部11と、給気部11の下
側配置され超清浄用エアフィルタ12を具備して成り、
クリーンエアを清浄気流通空間8へ向けて流下させダウ
ンフローFを形成するように構成されている。ちなみに
超清浄用エアフィルタとしては、粒径0.1μmの空気中
の浮遊微粒子を99%以上の高い効率で捕集し得るフィ
ルタを用いるのが望ましい。
The clean air flow lowering means 10 has a blower fan (not shown) built therein, and comprises an air supply part 11 arranged at the top and an ultracleaning air filter 12 arranged below the air supply part 11. ,
The clean air is made to flow down toward the clean air circulation space 8 to form the downflow F. By the way, as the ultracleaning air filter, it is desirable to use a filter that can collect airborne particles having a particle diameter of 0.1 μm in the air with a high efficiency of 99% or more.

清浄気流通空間8は基板処理装置1の後部側壁1bと、前
面側に垂下させて設けた層流案内板14と、上記エアフ
ィルタ12とによって囲まれ、基板処理槽2を覆うよう
になつている。即ち、この清浄気流通空間8は、排液槽
5の前部側壁5aより立設した前部隔壁15と、この前部
隔壁15の上端から後部側壁1bの中間高さ位置に亘つて
略水平に設けた上部隔壁16とによって高圧室8dと低圧
室8bとに区画形成されており、基板処理槽2を含む排液
槽5を、外部空間(以下クリーンルームという)40に対
して、内側より低圧室8bと高圧室8aで覆い、低圧室8bに
強制排気口28を臨ませて配置構成されている。
The clean air circulation space 8 is surrounded by the rear side wall 1b of the substrate processing apparatus 1, the laminar flow guide plate 14 hung down to the front side, and the air filter 12 so as to cover the substrate processing bath 2. There is. That is, the clean air circulation space 8 is substantially horizontal from the front partition wall 15 standing upright from the front side wall 5a of the drainage tank 5 and the intermediate height position of the upper wall of the front partition wall 15 to the rear side wall 1b. It is partitioned into a high-pressure chamber 8d and a low-pressure chamber 8b by the upper partition wall 16 provided in, and the drainage tank 5 including the substrate processing tank 2 is pressured from the inside to the external space (hereinafter referred to as a clean room) 40. The chamber 8b and the high pressure chamber 8a are covered, and the low pressure chamber 8b is arranged so that the forced exhaust port 28 faces it.

前部隔壁15には、前記ロボット20により基板搬送用
のアーム移動用溝15a及びアーム昇降用溝15bが切設され
ており、当該ロボット20の駆動部21は高圧室8aに位
置したまま、基板支持部22は低圧室8b内に位置した状
態で基板収容カセット25を搬送し得るようになつてい
る。
The front partition 15 is provided with an arm moving groove 15a and an arm elevating groove 15b for transferring a substrate by the robot 20, and the driving unit 21 of the robot 20 is placed in the high pressure chamber 8a while the substrate is being moved. The support portion 22 is configured to be able to convey the substrate accommodating cassette 25 in a state of being positioned inside the low pressure chamber 8b.

また、上部隔壁16は通気性を有するメッシュ板、パン
チプレート、スポンジ材料等によつて構成されており、
前部隔壁15とともにダウンフローFの流れを規制する
ことにより、高圧室8aの内圧がクリーンルーム40に対
して正圧になるように、かつ、低圧室8bの内圧が強制排
気口28で減圧されているがために高圧室8aに対して低
圧になるように作用する。
The upper partition 16 is made of a breathable mesh plate, punch plate, sponge material, or the like.
By restricting the flow of the downflow F together with the front partition wall 15, the internal pressure of the high pressure chamber 8a becomes a positive pressure with respect to the clean room 40, and the internal pressure of the low pressure chamber 8b is reduced by the forced exhaust port 28. Therefore, the high pressure chamber 8a acts so as to have a low pressure.

層流案内板14は、高圧室8a内の前部のダウンフローF
を強力に流下案内して、その下側部の放流口26より放
流させるとともに、ダウンフローの一部をアーム移動用
溝15a及びアーム昇降用溝15bより低圧室8bに流入さ
せる。これにより、基板処理槽2より発生する処理液蒸
気が高圧室8a側へ流出するおそれはなく、また、クリー
ンルーム40よりパーティクルが高圧室8a内に流入する
おそれはない。
The laminar flow guide plate 14 has a downflow F at the front part inside the high pressure chamber 8a.
Is strongly flowed down to be discharged from the discharge port 26 on the lower side thereof, and a part of the downflow is caused to flow into the low pressure chamber 8b from the arm moving groove 15a and the arm elevating groove 15b. As a result, there is no risk that the processing liquid vapor generated from the substrate processing tank 2 will flow out to the high pressure chamber 8a side, and there will be no risk that particles will flow into the high pressure chamber 8a from the clean room 40.

従って、基板搬送ロボット20の駆動部21が処理液蒸
気によつて侵食されることもない。
Therefore, the drive unit 21 of the substrate transfer robot 20 is not eroded by the processing liquid vapor.

なお、上記層流案内板はダウンフローFにより静電気が
帯電するのを防止すべく、導電可撓性の合成樹脂材料で
形成し、その導電部をアースするのが望ましい。
The laminar flow guide plate is preferably made of a conductive flexible synthetic resin material and its conductive portion is grounded in order to prevent static electricity from being charged by the downflow F.

第3図は本発明に係る基板処理装置の第2の実施例を示
す縦断面図である。
FIG. 3 is a vertical sectional view showing a second embodiment of the substrate processing apparatus according to the present invention.

この実施例は、清浄気流通空間8を前部隔壁30のみで
高圧室8aと低圧室8bとに区画するとともに、清浄気流下
手段10より流下するクリーンエアを高圧室8a内によ
り多く、低圧室8bには少なくなるよう流量制御するよ
うにした点が第1の実施例と異なる。
In this embodiment, the clean air flow space 8 is divided into the high pressure chamber 8a and the low pressure chamber 8b only by the front partition wall 30, and the clean air flowing down from the clean air flow lowering means 10 is larger in the high pressure chamber 8a, and the low pressure chamber 8a. 8b is different from the first embodiment in that the flow rate is controlled so as to decrease to 8b.

第4図は本発明に係る基板処理装置の第3の実施例を示
す縦断面図である。
FIG. 4 is a vertical sectional view showing a third embodiment of the substrate processing apparatus according to the present invention.

この実施例は、基板搬送用ロボットを後部に設け、これ
に伴つて第1実施例の前部隔壁15と同様の後部隔壁3
2を付設し、かつ、強制排気口28を排液槽5の後部側
壁5b内に臨ませ、排気流をより下方へ迂回させた点が第
1の実施例と異なる。
In this embodiment, a substrate transfer robot is provided in the rear part, and accordingly, a rear partition wall 3 similar to the front partition wall 15 of the first embodiment.
2 is additionally provided, and the forced exhaust port 28 is made to face the rear side wall 5b of the drainage tank 5 to divert the exhaust flow downward, which is a difference from the first embodiment.

なお、上記第1〜第3の実施例において、基板搬送ロボ
ット20は基板収容カセット25を基板支持部22で挟
持搬送するものについて例示したが、これに限ることな
く、例えば第5図に示すように、カセットを介在させる
ことなく、複数の基板Wを一対の基板支持部22bで直接
挟持するものでもよい。
In the first to third embodiments described above, the substrate transfer robot 20 exemplifies the one in which the substrate storage cassette 25 is sandwiched and transferred by the substrate support portion 22, but the present invention is not limited to this, and as shown in FIG. 5, for example. Alternatively, the plurality of substrates W may be directly sandwiched between the pair of substrate support portions 22b without interposing a cassette.

《発明の効果》 以上の説明で明らかなように、本発明によれば次の効果
を奏する。
<< Effects of the Invention >> As is apparent from the above description, the present invention has the following effects.

(イ) 基板処理槽が低圧室及びその外の高圧室によつて
覆われており、高圧室が処理液蒸気の漏出阻止、及び外
部からパーティクル侵入阻止の機能を備えることになる
ので、給排気量のバランスや気密性についてそれほど細
心の配慮を必要とせず、しかも内部のクリーン度は高く
維持できる。
(B) The substrate processing tank is covered by the low-pressure chamber and the high-pressure chamber outside the high-pressure chamber, and the high-pressure chamber has the function of preventing the leakage of the processing liquid vapor and the particle invasion from the outside. The amount of balance and airtightness do not need to be so careful, and the cleanliness inside can be kept high.

(ロ) 基板搬送ロボットの駆動部を高圧室に配置し、処
理液蒸気の付着による侵食を防止するようにしたので、
当該ロボットの故障を防止することができる。
(B) The drive unit of the substrate transfer robot is placed in the high pressure chamber to prevent erosion due to adhesion of the processing liquid vapor.
Failure of the robot can be prevented.

(ハ) 高圧室と低圧室の内圧比を所要範囲内に維持する
だけで、所要のクリーン度を維持することができるの
で、必ずしも多量のクリーンエアを必要とせず、送風用
ブロアや、排気用ブロアを小能力化できる。これにより
全体としてランニングコストの低減を図ることができ
る。
(C) The required cleanliness can be maintained simply by maintaining the internal pressure ratio between the high-pressure chamber and the low-pressure chamber within the required range.Therefore, a large amount of clean air is not required, and a blower for blower or exhaust The blower can be made smaller. This can reduce the running cost as a whole.

【図面の簡単な説明】[Brief description of drawings]

第1図〜第5図は本発明による実施例を示し、第1図は
第1の実施例による浸漬式基板処理装置の要部縦断概要
図、第2図はその基板処理装置の所要部を破断して示す
斜視図、第3図及び第4図はそれぞれ第2の実施例及び
第3の実施例による第1図相当図、第5図は基板搬送ロ
ボットの別実施例を示す正面図である。また、第6図及
び第7図はそれぞれ従来例による基板処理装置を示す第
1図相当図である。 2…基板処理槽、 8…清浄気流通空間、 8a…高圧室、 8b…低圧室、 10…清浄気流下手
段、 20…基板搬送ロボット、 21…ロボットの駆動部、 22…ロボットの基板支持
部、 28…強制排気口。
1 to 5 show an embodiment according to the present invention, FIG. 1 is a schematic vertical sectional view of an essential part of an immersion type substrate processing apparatus according to the first embodiment, and FIG. 2 shows a required part of the substrate processing apparatus. FIG. 3 is a perspective view cut away, FIGS. 3 and 4 are equivalent to FIG. 1 according to the second embodiment and the third embodiment, and FIG. 5 is a front view showing another embodiment of the substrate transfer robot. is there. 6 and 7 are equivalent to FIG. 1 showing a substrate processing apparatus according to a conventional example. 2 ... Substrate processing tank, 8 ... Clean air distribution space, 8a ... High pressure chamber, 8b ... Low pressure chamber, 10 ... Clean air flow lowering means, 20 ... Substrate transfer robot, 21 ... Robot drive unit, 22 ... Robot substrate support unit , 28 ... Forced exhaust port.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】多連配置した基板処理槽と、基板処理槽の
上方に設けられた清浄気流下手段と、清浄気流下手段の
下に形成される清浄気流通空間内を基板処理槽の並びに
沿つて移動可能に設けられた基板搬送ロボツトと、各基
板処理槽の近傍に多連配置した強制排気口とを備えて成
り、清浄気流下手段にり清浄気流通空間へ向けて清浄気
を流下させてダウンフローを形成し、基板処理槽より発
生する処理液蒸気をダウンフローにのせて強制排気口よ
り排気するように構成した浸漬式基板処理装置におい
て、 清浄気流通空間を当該浸漬式基板処理装置の外部空間に
対して正圧となる高圧室と、高圧室に対して低圧となる
低圧室とに区画形成し、基板処理槽を低圧室及びその外
側の高圧室で覆い、低圧室に強制排気口を臨ませ、基板
搬送ロボットの駆動部を高圧室内に、基板搬送ロボット
の基板支持部を低圧室内に配置して構成したことを特徴
とする浸漬式基板処理装置
1. A plurality of substrate processing tanks, a clean airflow means provided above the substrate processing tanks, and a clean air flow space formed below the clean airflow means are connected to the substrate processing tanks. It is equipped with a substrate transfer robot that is movably provided alongside it, and multiple forced exhaust ports arranged near each substrate processing tank. Clean air flows down to the clean air distribution space by the clean air flow down means. To form a downflow, and the processing liquid vapor generated from the substrate processing tank is placed on the downflow and exhausted from the forced exhaust port. It is divided into a high-pressure chamber that has a positive pressure with respect to the external space of the device and a low-pressure chamber that has a low pressure with respect to the high-pressure chamber. Exposing the exhaust port to the substrate transfer robot Immersion type substrate processing apparatus characterized in that the driving unit is arranged in the high pressure chamber and the substrate supporting unit of the substrate transfer robot is arranged in the low pressure chamber.
JP63094292A 1988-04-15 1988-04-15 Immersion type substrate processing equipment Expired - Fee Related JPH065671B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63094292A JPH065671B2 (en) 1988-04-15 1988-04-15 Immersion type substrate processing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63094292A JPH065671B2 (en) 1988-04-15 1988-04-15 Immersion type substrate processing equipment

Publications (2)

Publication Number Publication Date
JPH01265519A JPH01265519A (en) 1989-10-23
JPH065671B2 true JPH065671B2 (en) 1994-01-19

Family

ID=14106186

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63094292A Expired - Fee Related JPH065671B2 (en) 1988-04-15 1988-04-15 Immersion type substrate processing equipment

Country Status (1)

Country Link
JP (1) JPH065671B2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2593237B2 (en) * 1990-07-31 1997-03-26 三菱電機株式会社 Immersion cleaning equipment
JP3110218B2 (en) * 1992-09-25 2000-11-20 三菱電機株式会社 Semiconductor cleaning apparatus and method, wafer cassette, dedicated glove, and wafer receiving jig
DE19645425C2 (en) 1996-11-04 2001-02-08 Steag Micro Tech Gmbh Device for treating substrates
KR20040032121A (en) * 2001-08-28 2004-04-14 가부시기가이샤 산교세이기 세이사꾸쇼 Washing system, ultrasonic washer, vacuum dryer, washing device, washing tank, drying tank, and production system
JP5220641B2 (en) * 2009-02-03 2013-06-26 東京エレクトロン株式会社 Processing device, processing method, computer program, and storage medium
JP5465979B2 (en) * 2009-10-26 2014-04-09 東京エレクトロン株式会社 Semiconductor manufacturing equipment

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5850742A (en) * 1981-09-21 1983-03-25 Mitsubishi Electric Corp Apparatus for wafer washing and drying
JPS58135644A (en) * 1982-01-14 1983-08-12 Seiko Epson Corp Wet processor
JPS60100431A (en) * 1983-11-04 1985-06-04 Matsushita Electric Ind Co Ltd Treating device of article and chemical fluid
JPS62198122A (en) * 1986-02-26 1987-09-01 Hitachi Ltd Semiconductor processor
JPS62291939A (en) * 1986-06-11 1987-12-18 Nec Yamagata Ltd Dipping processor for semiconductor

Also Published As

Publication number Publication date
JPH01265519A (en) 1989-10-23

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