JPH06300149A - Diaphragm type valve - Google Patents
Diaphragm type valveInfo
- Publication number
- JPH06300149A JPH06300149A JP8633093A JP8633093A JPH06300149A JP H06300149 A JPH06300149 A JP H06300149A JP 8633093 A JP8633093 A JP 8633093A JP 8633093 A JP8633093 A JP 8633093A JP H06300149 A JPH06300149 A JP H06300149A
- Authority
- JP
- Japan
- Prior art keywords
- diaphragm
- type valve
- base material
- gas
- coating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims abstract description 23
- 239000010410 layer Substances 0.000 claims abstract description 18
- 239000011247 coating layer Substances 0.000 claims abstract description 16
- 239000012530 fluid Substances 0.000 claims abstract description 16
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000000354 decomposition reaction Methods 0.000 claims abstract description 13
- 229910000077 silane Inorganic materials 0.000 claims abstract description 13
- 230000009471 action Effects 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims abstract 2
- 239000002184 metal Substances 0.000 claims abstract 2
- 230000003197 catalytic effect Effects 0.000 claims description 13
- 239000010409 thin film Substances 0.000 claims description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical group O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 claims description 6
- 239000010935 stainless steel Substances 0.000 claims description 6
- 229910001220 stainless steel Inorganic materials 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 229910000531 Co alloy Inorganic materials 0.000 claims description 4
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- 229910000808 amorphous metal alloy Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 238000002161 passivation Methods 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims 2
- 239000000956 alloy Substances 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 229910052720 vanadium Inorganic materials 0.000 claims 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
- 230000004913 activation Effects 0.000 abstract description 9
- 239000003054 catalyst Substances 0.000 abstract description 7
- 239000007789 gas Substances 0.000 description 35
- 239000012535 impurity Substances 0.000 description 9
- 238000005259 measurement Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 229910000480 nickel oxide Inorganic materials 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 2
- 238000003795 desorption Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Landscapes
- Diaphragms And Bellows (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、例えば不純物濃度が１
ｐｐｂ以下の超高純度流体を扱う配管系等に多用される
ダイヤフラム型弁に関するものである。BACKGROUND OF THE INVENTION The present invention has an impurity concentration of 1
The present invention relates to a diaphragm type valve that is often used in a piping system or the like that handles ultra-high purity fluid of ppb or less.
【０００２】[0002]
【従来の技術】従来より、この種の超高純度流体は、高
集積化が進んだ半導体集積回路部品の製造を初めとして
各種の先端産業において多岐に亘る利用が図られてお
り、今後も益々その利用度が拡大するのは確実視されて
いる。2. Description of the Related Art Conventionally, this kind of ultra-high purity fluid has been widely used in various advanced industries including the production of highly integrated semiconductor integrated circuit parts, and will continue to be used in the future. It is surely seen that the utilization will increase.
【０００３】一方、不純物濃度が１ｐｐｂレベル以下、
具体的にはガス中の不純物濃度が１ｐｐｍレベルのガス
系の場合、ガス系のデッドスペース（ガスの滞留部）を
少なくする程度の改変を行えば、１ｐｐｍ以下の不純物
濃度Ｎ2 、Ａｒ等の不活性ガスにてパージアウトするこ
とにより、不純物濃度は１ｐｐｍ以下に比較的容易にす
ることが可能である。On the other hand, when the impurity concentration is 1 ppb level or less,
Specifically, in the case of a gas system in which the impurity concentration in the gas is 1 ppm level, if the modification is performed to the extent that the dead space (gas retention part) of the gas system is reduced, the impurity concentration of 1 ppm or less such as N 2 and Ar By purging out with an inert gas, the impurity concentration can be made relatively easy to 1 ppm or less.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、不純物
濃度が１ｐｐｂレベルのガスを取り扱う場合、ガス系を
構成する接ガス部表面に吸着した水分を中心とする不純
物の脱離を含む放出ガスが大きく影響する。そのため、
いわゆるベーキングという加熱処理を前処理として行
い、前記水分を中心とした吸着不純物分子の脱離を該前
処理の段階で予め促進させておき、放出ガスの少ない、
清浄な接ガス部表面を有するガス系を短時間で得るよう
にしている。However, when handling a gas having an impurity concentration of 1 ppb level, the released gas including desorption of impurities centered on water adsorbed on the gas contact surface forming the gas system has a great influence. To do. for that reason,
A so-called baking heat treatment is performed as a pretreatment, and the desorption of adsorbed impurity molecules centering on the water content is promoted in advance at the pretreatment stage to reduce the amount of released gas.
A gas system having a clean gas contact surface is obtained in a short time.
【０００５】他方、上述のような処理でガス系材料の表
面の不純物が除去されてしまうと、その熱エネルギーに
より接ガス部表面が活性化し、該表面では触媒効果、す
なわち接ガス部に接触するガスの分解作用が生じたり、
苛酷な使用条件下にあるダイヤフラムに反応生成物が付
着したりするようになる。前記分解作用や異物の付着は
前記活性化により室温時にも生じるようになる。すなわ
ち、従来構造では、ベーキングという処理により表面の
清浄化及び活性化等という二律背反の問題を生じさせる
ことになる。On the other hand, when the impurities on the surface of the gas-based material are removed by the above-mentioned treatment, the heat energy activates the surface of the gas-contacting portion, which causes a catalytic effect, that is, contact with the gas-contacting portion. Gas decomposition may occur,
Reaction products will adhere to the diaphragm under severe usage conditions. Due to the activation, the decomposition action and the adhesion of foreign matter are caused even at room temperature. That is, in the conventional structure, the process of baking causes a trade-off problem such as cleaning and activation of the surface.
【０００６】本発明は、上記従来技術の課題を解決する
べくなされたものであり、少なくとも使用流体の接触部
表面の温度が比較的低温時においても、該使用流体の分
解作用等に対する触媒活性化の後退を実現できる等とし
たダイヤフラム型弁を提供することを目的とする。[0006] The present invention has been made to solve the above-mentioned problems of the prior art, and even at least when the temperature of the surface of the contact portion of the working fluid is relatively low, the catalyst activation for the decomposition action of the working fluid is performed. It is an object of the present invention to provide a diaphragm type valve that can realize the retreat of the valve.
【０００７】[0007]
【課題を解決するための手段】上記目的を達成するべ
く、本発明の主たる構成は、金属製材料から成るダイヤ
フラムを有するダイヤフラム型弁において、少なくとも
前記ダイヤフラムの最表面に、当該使用流体の分解作用
に対する触媒活性序列が、少なくとも前記金属材料に比
べて下位の材料から成るコーティング層を形成したこと
を特徴とする。In order to achieve the above object, the main structure of the present invention is a diaphragm type valve having a diaphragm made of a metal material, in which at least the outermost surface of the diaphragm is decomposed by the fluid to be used. Is characterized in that a coating layer made of a material lower than the metal material is formed at least in order of catalytic activity.
【０００８】[0008]
【作用】コーティング層は、ダイヤフラムの基材に比べ
て触媒活性序列が下位であるので、該ダイヤフラムに使
用流体、例えばシランガスが接触した場合、該シランガ
スの分解反応は、該コーティング層が形成されてない場
合に比べて、顕著に後退したものとなる。Since the coating layer has a lower catalytic activity sequence than the base material of the diaphragm, when the fluid used, such as silane gas, comes into contact with the diaphragm, the decomposition reaction of the silane gas causes the coating layer to be formed. Compared to the case without it, it will be regressed remarkably.
【０００９】[0009]
【実施例】図１は、本実施例に係るダイヤフラム型弁を
示すものであり、全部品が金属材料から成り、例えば半
導体デバイス製造用のプロセスガス配管系に設けられる
ものである。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows a diaphragm type valve according to this embodiment, in which all parts are made of a metal material and are provided, for example, in a process gas piping system for manufacturing a semiconductor device.
【００１０】本ダイヤフラム型弁１は、特に、使用ガス
体（例えば半導体製造プロセス用の特殊材料ガス）と直
接的に接触する接ガス部が弁本体２とダイヤフラム３の
２つの部品から成るという省滞留部構造に係るものであ
る。The present diaphragm type valve 1 is particularly advantageous in that the gas contact portion which comes into direct contact with the used gas body (for example, a special material gas for a semiconductor manufacturing process) is composed of two parts, a valve body 2 and a diaphragm 3. This is related to the structure of the retention part.
【００１１】前記弁本体２は、前記特殊材料ガスである
シランガスを流すためのガス配管系に配設されるように
なっており、流入口４と流出口５とを連通する弁孔６の
弁頭上方を覆うように前記ダイヤフラム３が配置されて
いる。The valve body 2 is arranged in a gas piping system for flowing the silane gas which is the special material gas, and has a valve hole 6 for communicating the inlet 4 and the outlet 5. The diaphragm 3 is arranged so as to cover the upper part of the head.
【００１２】前記ダイヤフラム３は、前記弁孔６の弁頭
位置近傍から立ち上がるように形成された弁室７の底部
に位置し、アクチュエータボタンホルダ８によって周縁
部が押圧された状態で位置決めされている。The diaphragm 3 is located at the bottom of a valve chamber 7 formed so as to rise from the vicinity of the valve head position of the valve hole 6, and is positioned with the peripheral portion thereof being pressed by an actuator button holder 8. .
【００１３】図１中２つの拡大部分Ｋａ、Ｋｂは、夫々
弁本体２の流入口４の近傍における内表面状態、及びダ
イヤフラム３の積層状態を示すものである。ここで、弁
本体２は、ステンレス鋼（好適にはＳＵＳ３１６Ｌ）か
ら成るものであり、ダイヤフラム３は夫々ニッケル−コ
バルト合金から成る３枚の構成体３ａ〜３ｃから構成さ
れている。Two enlarged portions Ka and Kb in FIG. 1 respectively show an inner surface state in the vicinity of the inflow port 4 of the valve body 2 and a laminated state of the diaphragm 3. Here, the valve body 2 is made of stainless steel (preferably SUS316L), and the diaphragm 3 is made up of three constituent bodies 3a to 3c each made of a nickel-cobalt alloy.
【００１４】前記ニッケル−コバルト合金の組成は、例
えばコバルトが２５〜４５、クロムが１２〜２５、モリ
ブデンが８〜１５、ニオブが０．１〜３、炭素が０．０
３以下、そして残部がニッケルというものである。The composition of the nickel-cobalt alloy is, for example, 25 to 45 for cobalt, 12 to 25 for chromium, 8 to 15 for molybdenum, 0.1 to 3 for niobium, and 0.0 for carbon.
3 or less, and the balance is nickel.
【００１５】前記拡大部分Ｋａに示すように、前記弁本
体２の内表面には熱酸化不動態化処理が施されており、
三酸化二クロム（Ｃｒ2Ｏ3）の薄膜層２Ａが形成され、
そして、前記拡大部分Ｂに示すように、構成体３ａの最
表面にはタンタルアモルファス合金から成るコーティン
グ層３Ａがスパッタリングにより形成されている。As shown in the enlarged portion Ka, the inner surface of the valve body 2 is subjected to a thermal oxidation passivation treatment,
A thin film layer 2A of dichromium trioxide (Cr 2 O 3 ) is formed,
Then, as shown in the enlarged portion B, a coating layer 3A made of a tantalum amorphous alloy is formed on the outermost surface of the structural body 3a by sputtering.
【００１６】前記薄膜層２Ａ及びコーティング層３Ａ
は、前記特殊材料ガスの分解作用に対して非触媒性能を
発揮するべく形成されている。The thin film layer 2A and the coating layer 3A
Are formed to exhibit non-catalytic performance against the decomposition action of the special material gas.
【００１７】表１は、各種金属酸化物の酸化反応につい
ての触媒活性序列、換言すれば非触媒性能の度合の順序
に対応する活性化エネルギーの大小関係を示すものであ
る。すなわち、同表中、下位の金属酸化物になる程、反
応の進行が遅くなることを意味する。Table 1 shows the order of catalytic activity for the oxidation reactions of various metal oxides, in other words, the magnitude relationship of activation energies corresponding to the order of the degree of non-catalytic performance. That is, in the table, the lower the metal oxide, the slower the reaction progress.
【００１８】[0018]
【表１】 [Table 1]
【００１９】表１から、酸化ニッケル（ＮｉＯ）はいず
れの反応においても活性化エネルギーが小さい側にある
ので、ニッケルの成分が多いＳＵＳ３１６Ｌステンレス
鋼の場合、その触媒効果は酸化ニッケルを中心として行
われるものと理解でき、従って、該酸化ニッケルの下位
にある三酸化二クロムを該ステンレス鋼の表面に形成し
ておけば、各反応の進行は抑止されることになる。すな
わち、三酸化二クロムは非触媒作用を呈する。From Table 1, nickel oxide (NiO) has a smaller activation energy in any reaction. Therefore, in the case of SUS316L stainless steel containing a large amount of nickel components, its catalytic effect is mainly nickel oxide. Therefore, if dichromium trioxide, which is subordinate to the nickel oxide, is formed on the surface of the stainless steel, the progress of each reaction will be suppressed. That is, dichromium trioxide exhibits a non-catalytic effect.
【００２０】図２及び図３は、ＳＵＳ３１６Ｌ製のフィ
ルターについて、特殊材料ガスたるシランガスの触媒活
性化の検証を行った際の測定結果を示すものである。こ
の測定においては、アルゴンガス中にシランガスを所定
濃度（５００ｐｐｍ）で含ませ、これを所定流量（５ｃ
ｃ／ｍｉｎ）で、配管中に設けられたフィルターの上流
側から下流側に向けて流した。FIGS. 2 and 3 show the measurement results when the catalyst activation of the silane gas, which is a special material gas, was verified for the SUS316L filter. In this measurement, the silane gas was contained in the argon gas at a predetermined concentration (500 ppm), and this was supplied at a predetermined flow rate (5 c
c / min), the flow was made from the upstream side to the downstream side of the filter provided in the pipe.
【００２１】図２は、前記測定条件下に置かれたフィル
ター近傍の雰囲気における水素（シランガスの分解成分
に対応するもの）の含有量と経過時間との関係を示すも
のである。同図において、曲線Ａ、Ｂはベーキング処理
後の室温時の測定結果を、曲線Ｃ、Ｄはアルゴンガス導
入による長時間（１０時間）の高温（４５０℃）ベーキ
ング処理後の測定結果に対応するものである。また、曲
線Ａ、Ｃは薄膜層が形成されていない場合、すなわちＳ
ＵＳ３１６Ｌの素地が露出している場合、曲線Ｂ、Ｄは
薄膜層たる三酸化二クロム層が形成されている場合に対
応する。FIG. 2 shows the relationship between the content of hydrogen (corresponding to the decomposed component of silane gas) and the elapsed time in the atmosphere near the filter placed under the measurement conditions. In the figure, curves A and B correspond to the measurement results at room temperature after baking, and curves C and D correspond to the measurement results after high temperature (450 ° C.) baking for a long time (10 hours) by introducing argon gas. It is a thing. Further, the curves A and C show the case where the thin film layer is not formed, that is, S
When the substrate of US316L is exposed, the curves B and D correspond to the case where a dichromium trioxide layer which is a thin film layer is formed.
【００２２】図３は、前記フィルター近傍の雰囲気にお
けるシランガスの残量と経過時間との関係を示すもので
ある。同図において、曲線ａ、ｂはベーキング処理後の
室温時の測定結果を、曲線ｃ、ｄは図２の曲線Ｃ、Ｄと
同様なアルゴンガス導入による高温ベーキング処理後の
測定結果に対応するものである。また、曲線ａ、ｃは薄
膜層が形成されていない場合、すなわちＳＵＳ３１６Ｌ
の地肌が露出している場合、曲線ｂ、ｄは薄膜層たる三
酸化二クロム層が形成されている場合に対応する。FIG. 3 shows the relationship between the remaining amount of silane gas and the elapsed time in the atmosphere near the filter. In the figure, curves a and b correspond to the measurement results at room temperature after the baking treatment, and curves c and d correspond to the measurement results after the high temperature baking treatment by introducing the argon gas similar to the curves C and D in FIG. Is. In addition, the curves a and c indicate that the thin film layer is not formed, that is, SUS316L.
When the background is exposed, curves b and d correspond to the case where a dichromium trioxide layer, which is a thin film layer, is formed.
【００２３】図２及び図３に示す結果から、ベーキング
処理後においては、室温時に比べて高温処理時の方がシ
ランガスの分解反応の促進の程度が大きく、また、薄膜
層が形成されていると、触媒活性化が後退することが理
解できる。From the results shown in FIGS. 2 and 3, after the baking treatment, the degree of promotion of the decomposition reaction of the silane gas was higher at the high temperature treatment than at the room temperature, and the thin film layer was formed. It can be understood that the catalyst activation is delayed.
【００２４】従って、弁本体の内表面に薄膜層を形成
し、あるいはダイヤフラムの接ガス側の表面にコーテイ
ング層を形成すると前記触媒活性化の後退を期待でき
る。Therefore, if a thin film layer is formed on the inner surface of the valve body or a coating layer is formed on the surface of the diaphragm on the gas contact side, it is expected that the catalyst activation will be delayed.
【００２５】[0025]
【発明の効果】請求項１の発明によれば、ベーキング等
による表面の清浄化処理を行っても、弁本体内等での当
該使用流体に対する触媒反応、例えば分解反応の進行の
抑止を行うことができ、さらには、ダイヤフラムへの反
応生成物の付着を防止でき、該付着に基づくパーティク
ルの発生や、ダイヤフラムの閉弁時におけるリークの増
大等が抑えられる。換言すれば、使用流体中への反応生
成物の混入等に基づく純度低下等を防止することがで
き、例えば半導体製造プロセスの高精度化に貢献でき
る。According to the first aspect of the present invention, even if the surface is cleaned by baking or the like, the progress of catalytic reaction, for example, decomposition reaction, with respect to the fluid used in the valve body is suppressed. Further, the reaction product can be prevented from adhering to the diaphragm, and the generation of particles due to the adhering, the increase in leak when the diaphragm is closed, and the like can be suppressed. In other words, it is possible to prevent the deterioration of the purity due to the mixing of the reaction products in the fluid used, and to contribute to the improvement of the accuracy of the semiconductor manufacturing process, for example.
【００２６】請求項２及び請求項３の発明によれば、当
該利用分野及び当該使用流体は本発明の最も典型的な適
用例の一つであり、本発明の有用性を好適に発揮でき
る。According to the inventions of claims 2 and 3, the field of application and the fluid to be used are one of the most typical applications of the present invention, and the usefulness of the present invention can be suitably exhibited.
【００２７】請求項４の発明によれば、当該物質を用い
れば当該使用流体に対する触媒活性の後退性を十分に発
揮できる。According to the fourth aspect of the invention, the use of the substance can sufficiently exhibit the retreat of the catalytic activity with respect to the used fluid.
【００２８】請求項５の発明によれば、当該物質は触媒
後退性を発揮するだけでなく、それ自体からの放出物質
が皆無に近いのでより好適である。[0028] According to the invention of claim 5, the substance is more preferable because it not only exhibits the catalytic receding property but also the substance released from itself is almost zero.
【００２９】請求項６の発明によれば、コーティング層
をスパッタリングにより形成することにより、その形成
過程における汚染物質の発生を極力抑止できる。According to the invention of claim 6, by forming the coating layer by sputtering, generation of contaminants can be suppressed as much as possible during the formation process.
【００３０】請求項７の発明によれば、前記コーティン
グ層は、少なくとも３μｍの厚みを有するので、その下
層の露出が妨げられて汚染物質の放出を十分に阻止でき
る。According to the invention of claim 7, since the coating layer has a thickness of at least 3 μm, the exposure of the lower layer is prevented and the emission of contaminants can be sufficiently prevented.
【００３１】請求項８の発明によれば、かかる成分とす
ることにより、ダイヤフラムが苛酷な使用条件に耐える
ようにしたものとすることができる。According to the invention of claim 8, the use of such components makes it possible for the diaphragm to withstand severe operating conditions.
【００３２】請求項９及び請求項１０の発明によれば、
弁本体の基材を従前の一般的な組成材料で形成すること
ができ好適である一方、これを従前より広く知られた薄
膜層にて容易に被覆することにより、ダイヤフラムのコ
ーティング層の形成と相俟って汚染物質の放出を一層有
効に防止できる。According to the inventions of claims 9 and 10,
While it is preferable that the base material of the valve body can be formed of a conventional general composition material, it is possible to form a coating layer of a diaphragm by easily coating the base material of the valve body with a thin film layer which is more widely known than before. Together, they can prevent the emission of pollutants more effectively.
【図１】本発明の実施例に係るダイヤフラム型弁の一部
縦断面図である。FIG. 1 is a partial vertical cross-sectional view of a diaphragm type valve according to an embodiment of the present invention.
【図２】シランガスの分解反応における水素濃度の経時
変化をステンレス鋼及びその表面を被覆したものについ
て比較するグラフである。FIG. 2 is a graph comparing changes in hydrogen concentration over time in a decomposition reaction of silane gas with respect to stainless steel and one whose surface is coated.
【図３】シランガスの分解反応における経時変化をステ
ンレス鋼及びその表面を被覆したものについて比較する
グラフである。FIG. 3 is a graph comparing changes over time in the decomposition reaction of silane gas with respect to stainless steel and one whose surface is coated.
１ ダイヤフラム型弁、 ２ 弁本体、 ２Ａ 薄膜層、 ３ ダイヤフラム、 ３Ａ コーティング層、 ４ 流入口、 ５ 流出口、 ６ 弁孔、 ７ 弁室、 ８ アクチュエータボタンホルダ。 1 diaphragm type valve, 2 valve body, 2A thin film layer, 3 diaphragm, 3A coating layer, 4 inflow port, 5 outflow port, 6 valve hole, 7 valve chamber, 8 actuator button holder.
Claims (10)
フラムを有するダイヤフラム型弁において、少なくとも
前記弁本体及びダイヤフラムの基材の最表面に、当該使
用流体の分解作用に対する触媒活性序列が、少なくとも
前記基材に比べて下位の材料から成るコーティング層を
形成したことを特徴とするダイヤフラム型弁。1. A diaphragm-type valve having a valve body and a diaphragm made of a metallic base material, wherein at least the outermost surface of the base material of the valve body and the diaphragm has at least a catalytic activity sequence for the decomposition action of the fluid used. A diaphragm-type valve having a coating layer formed of a material lower than that of the base material.
の特殊材料ガスであることを特徴とする請求項１に記載
のダイヤフラム型弁。2. The diaphragm-type valve according to claim 1, wherein the fluid used is a special material gas for a semiconductor manufacturing process.
ことを特徴とする請求項２に記載のダイヤフム型弁。3. The diaphragm valve according to claim 2, wherein the special material gas is silane gas.
ダイヤフラムの基材がニッケル−コバルト合金から成る
とき、バナジウム、チタン、クロム、タンタル、若しく
はジルコニウムの単体金属、又はこれらの所定の合金で
あることを特徴とする請求項１から請求項３までのいず
れか１項に記載のダイヤフラム型弁。4. The material having a lower catalytic activity order is a single metal of vanadium, titanium, chromium, tantalum, or zirconium, or a predetermined alloy thereof, when the base material of the diaphragm is a nickel-cobalt alloy. The diaphragm-type valve according to any one of claims 1 to 3, wherein the diaphragm-type valve is present.
ァス合金であることを特徴とする請求項４に記載のダイ
ヤフラム型弁。5. The diaphragm type valve according to claim 4, wherein the predetermined alloy is a tantalum-based amorphous alloy.
により形成することを特徴とする請求項４に記載のダイ
ヤフラム型弁。6. The diaphragm valve according to claim 4, wherein the coating layer is formed by sputtering.
ｍの厚みを有することを特徴とする請求項５又は請求項
６に記載のダイヤフラム型弁。7. The coating layer is at least 3 μm.
The diaphragm-type valve according to claim 5 or 6, wherein the diaphragm-type valve has a thickness of m.
ル及びコバルトの成分量が４０重量％を越えるものであ
ることを特徴とする請求項４から請求項７までのいずれ
か１項に記載のダイヤフラム型弁。8. The diaphragm type according to claim 4, wherein the nickel-cobalt alloy contains nickel and cobalt in an amount of more than 40% by weight. valve.
弁本体の基材がステンレス鋼から成るとき、酸化物不動
態化処理が施された薄膜層であることを特徴とする請求
項１から請求項８までのいずれか１項に記載のダイヤフ
ラム型弁。9. The material having a lower catalytic activity order is a thin film layer subjected to oxide passivation treatment when the base material of the valve body is made of stainless steel. The diaphragm type valve according to any one of claims 1 to 8.
2Ｏ3）であることを特徴とするダイヤフラム型弁。10. The thin film layer is dichromium trioxide (Cr).
2 O 3 ) A diaphragm type valve.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8633093A JPH06300149A (en) | 1993-04-13 | 1993-04-13 | Diaphragm type valve |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8633093A JPH06300149A (en) | 1993-04-13 | 1993-04-13 | Diaphragm type valve |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06300149A true JPH06300149A (en) | 1994-10-28 |
Family
ID=13883832
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8633093A Pending JPH06300149A (en) | 1993-04-13 | 1993-04-13 | Diaphragm type valve |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06300149A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004060741A (en) * | 2002-07-26 | 2004-02-26 | Motoyama Eng Works Ltd | Diaphragm, diaphragm valve, and film forming device |
-
1993
- 1993-04-13 JP JP8633093A patent/JPH06300149A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004060741A (en) * | 2002-07-26 | 2004-02-26 | Motoyama Eng Works Ltd | Diaphragm, diaphragm valve, and film forming device |
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