JPH06232138A - Annealing device - Google Patents

Abstract

PURPOSE:To enable the annealing step in high evenness imposing no strain to a wafer at all to be performed by a method wherein the annealing device is provided with main heaters heating the whole wafer and an auxiliary heater to suppress the temperature decline in the wafer periphery during the annealsing step. CONSTITUTION:In order to be annealed, a wafer 3 is contained in a susceptor 4 and the sidewall part 4a thereof and then a cover part 4b of the susceptor 4 is laid on the wafer 3. The susceptor 4 containing the wafer 3 is put in a quartz tube 2. Next, the whole wafer 3 is heated by halogen lamp heaters 1 while the wafer periphery is heated by an auxiliary heater 5. At this time, the temperature in the periphery of the wafer 3 is adjusted by heating the auxiliary heater 5. Through these procedures, the whole wafer 3 can be heated downward by the halogen lamp heaters 1 while heating the wafer periphery by the auxiliary heater 5 thereby enabling the temperature decline in the wafer periphery to be avoided while the temperature difference between the wafer periphery and the central part to be decreased.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an annealing device for heating a wafer rapidly and uniformly.

[0002]

2. Description of the Related Art FIGS. 3 (a) and 3 (b) are a front view and a plan view showing a conventional heating annealing apparatus using a halogen lamp as a heating source. Reference numeral 1 is a linear halogen lamp heater for heating the wafer. As shown in FIG. 3 (b), a plurality of linear halogen lamp heaters 1 are arranged in parallel, and they are divided into three zones as shown in FIG. 3 (a). 3 is a wafer, 4 is a susceptor, 4a is a side wall of the susceptor, 4b is a susceptor lid, and 2 is a quartz tube. The inside of the quartz tube 2 can be replaced with a gas such as N2.

When heat annealing is performed using a conventional apparatus, the wafer 3 is housed in the susceptor 4 and the side wall portion 4a thereof, and the lid portion 4b of the susceptor is placed on the susceptor 4. The susceptor accommodating the wafer is installed in the quartz tube 2 or the stainless chamber.

In the conventional thermal annealing, the wafer 3
Since the temperature is lower in the peripheral portion than in the central portion, the temperature distribution in the wafer surface can be reduced by increasing the heating temperature in the zones at both ends of the halogen lamp heater 1 divided into the above three zones. There is.

Further, by using a closed structure susceptor, a guard ring, or the like, escape of heat in the peripheral portion of the wafer is suppressed.

[0006]

The conventional heat annealing apparatus is constructed as described above, and the divisional heating control system of the halogen lamp heater 1 has a problem that the temperature control can be performed only in one direction of the wafer surface. It was

Further, when the closed structure susceptor, the guard ring, etc. are used, it is difficult to optimize their shapes.

The present invention has been made to solve the above problems, and an object of the present invention is to provide a heating annealing apparatus capable of suppressing a temperature drop in the peripheral portion of a wafer during heating annealing.

[0009]

A heating and annealing apparatus according to the present invention comprises a susceptor for holding a wafer, a main heater for heating the entire wafer, and an auxiliary heater for heating the peripheral portion of the wafer. .

Further, in the present invention, the auxiliary heater is a carbon heater provided around the wafer on the susceptor.

Further, in the present invention, the auxiliary heater is a plurality of halogen lamp heaters provided around the susceptor.

[0012]

According to the present invention, in addition to the main heater for heating the entire wafer, a carbon heater is provided around the wafer on the susceptor as an auxiliary heater for the peripheral portion of the wafer. Annealing with high uniformity that prevents temperature drop and does not cause wafer distortion can be performed.

Further, according to the present invention, in addition to the main heater for heating the entire wafer, a plurality of halogen lamp heaters are provided around the susceptor as the auxiliary heater, so that heating of the auxiliary heater allows the peripheral portion of the wafer to be heated. The temperature drop can be prevented, and the temperature distribution in the circumferential direction of the wafer can be controlled by individually controlling the power of any heater among the plurality of auxiliary heaters.

[0014]

EXAMPLES Example 1. 1 (a) and 1 (b) are a front view and a plan view showing a schematic configuration of a heat annealing apparatus according to a first embodiment of the present invention. In the figure, 1 is a halogen lamp heater for heating a wafer from above, 2 is a quartz tube, 3 is a wafer as an annealing sample, 4 is a susceptor, 4a is a side wall of the susceptor, 4b is a lid of the susceptor, and 5 is a susceptor. 4 is an auxiliary heater installed so as to surround the periphery of the wafer 3.

In addition to the conventional structure shown in FIG. 3, the structure of the first embodiment is characterized in that a carbon heater is provided on the susceptor as an auxiliary heater for heating the peripheral portion of the wafer.

Next, the operation will be described. When the thermal annealing is performed, the wafer 3 is the susceptor 4 and the side wall portion 4 thereof.
It is housed in a and the lid portion 4b of the susceptor is placed on it. The susceptor containing the wafer 3 is installed in the quartz tube 2.

The halogen lamp heater 1 heats the entire wafer, and the auxiliary heater 5 heats the peripheral portion of the wafer. At this time, the temperature of the peripheral portion of the wafer 3 is adjusted by heating the auxiliary heater.

As described above, in the heat annealing apparatus according to the first embodiment, the halogen lamp heater 1 heats the entire wafer from above, and the auxiliary heater 5 heats the wafer peripheral portion. Therefore, the temperature drop in the wafer peripheral portion is prevented. Therefore, there is an effect that the temperature difference between the peripheral portion and the central portion of the wafer can be reduced.

Example 2. 2 (a) and 2 (b) are a front view and a plan view showing a schematic configuration of a heat annealing apparatus according to a second embodiment of the present invention. In the figure, reference numeral 6 denotes a plurality of auxiliary heaters arranged at equal intervals around the susceptor 4.

The structure of the second embodiment is characterized in that a halogen lamp heater 6 is provided as an auxiliary heater for heating the peripheral portion of the wafer in addition to the conventional structure shown in FIG.

When the wafer is annealed by heating according to the second embodiment, the halogen lamp heater 1 heats the entire wafer, and the auxiliary heaters 6 heat the peripheral portion of the wafer. At this time, the lowering of the temperature of the peripheral portion of the wafer 3 is suppressed by the heating of the auxiliary heater 6. Further, the temperature distribution in the circumferential direction of the wafer is controlled by individually power-controlling any heater of the plurality of auxiliary heaters 6.

As described above, in the thermal annealing apparatus according to the second embodiment, the halogen lamp heater 1 heats the entire wafer, and the auxiliary heater 6 heats the wafer peripheral portion. Can be suppressed. Further, there is an effect that the temperature distribution in the circumferential direction of the wafer 1 can be controlled by individually power-controlling an arbitrary heater of the plurality of auxiliary heaters 6.

[0023]

As described above, according to the heating / annealing device of the present invention, the auxiliary heater for heating the periphery of the wafer is provided in addition to the main heater for heating the entire wafer from above. It is possible to adjust the temperature difference between the peripheral portion and the central portion of the wafer by controlling the power of, and this has the effect of performing annealing with high uniformity without causing wafer distortion.

[Brief description of drawings]

FIG. 1 is a front view and a plan view showing the configuration of a heat annealing apparatus according to a first embodiment of the present invention.

2A and 2B are a front view and a plan view showing a configuration of a heat annealing apparatus according to a second embodiment of the present invention.

3A and 3B are a front view and a plan view showing the structure of a conventional heat annealing apparatus.

[Explanation of symbols]

 1 Halogen lamp heater 2 Quartz tube 3 Wafer (annealing sample) 4 Susceptor 4a Susceptor side wall 4b Susceptor lid 5 Carbon heater (auxiliary heater) 6 Halogen lamp heater (auxiliary heater)

Claims (3)

[Claims] 1. A heating annealing apparatus comprising: a susceptor for holding a wafer, a main heater for heating the entire wafer, and an auxiliary heater for heating a peripheral portion of the wafer. 2. The heating annealing apparatus according to claim 1, wherein the auxiliary heater is a carbon heater provided around the wafer on the susceptor. 3. The heating annealing apparatus according to claim 1, wherein the auxiliary heater is a plurality of halogen lamp heaters provided around the susceptor.