JPH06236952A - Manufacture of sealed semiconductor device, and sealed semiconductor device - Google Patents

Abstract

PURPOSE:To eliminate the removal of resin burrs by forming a lead frame provided with a plurality of long leads and forming a blocking bank by aligning a strip-shaped member on the mold line of the lead frame and adhering the member almost vertical to the lengthwise direction of the lead. CONSTITUTION:For a lead frame 1, a strip-shaped member 9 is adhered at a clamping position of a lead 6 to be clamped by the mold die of a mold device permitting the adjacent lead 6 to be alternately connected. Namely, the strip- shaped member 9 is aligned so as to permit the edge closer to the first edge of an inner lead 6a to be on the mold line ML or on the inner side of the line, and is adhered almost vertical to the lengthwise direction of the lead 6 on the lead 6 so as to form a blocking bank. Since an adhesive layer 9b is inserted between the leads 6, resin 7 injected during a mold process is prevented from leaking from the mold die 8.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an encapsulated semiconductor device and an encapsulated semiconductor device.

[0002]

2. Description of the Related Art Conventionally, in order to prevent a molding material from protruding from between outer lead portions in a molding process in manufacturing a mold type semiconductor device, as shown in FIG. A dam bar 40 is provided to connect the formed leads 36 to each other.

That is, at the time of molding, the ejected molding material is prevented by the dam bar 40 from further protruding.

In such a lead frame 31, it is necessary to cut the dam bar 40 after the molding to insulate the leads 36 from each other.

A method of manufacturing a semiconductor device using a lead frame having a dam bar similar to the one described above is disclosed in, for example, US Pat. No. 3,762,039 (issued on Oct. 2, 1973), especially in FIG. And FIG. 6 and its associated description.

[0006]

However, as in the lead frame 31 used in a multi-pin semiconductor device with a fine pitch (for example, a pitch of 0.3 mm or less), the spacing between the leads 36 is very narrow. In the lead frame 31, it is difficult to cut the dam bar 40 itself due to the limitation of the cutting blade of the dam bar 40, the accuracy of alignment between the cutting blade and the lead 36 when cutting the dam bar 40, and the like. It would be impractical to provide.

Further, in the conventional lead frame 31 shown in FIG. 21, since the molding material protrudes from the outer periphery of the package in the molding process, it is necessary to remove the protruding molding material (resin burr) after the molding. However, when the lead 36 becomes thin, the lead 36 may be deformed during the removal of the resin burr, or the resin burr separated from the package and the lead 36 may be sandwiched between the lead forming jig and the lead 36 to cause a lead forming failure. The separated resin burr adheres to other parts of the lead 36 and may cause a contact failure when the lead is mounted. Therefore, the removal of the resin burr becomes a step requiring extra caution.

On the other hand, the dam bar 40 is attached to the lead frame 31.
It is also possible to use a tape adhered on the lead 36 of the lead frame 31 almost perpendicularly to the length direction of the lead 36, but such a lead frame also has a resin burr, and therefore it is necessary to remove it. There is.
The use of a tape instead of the dam bar 40 has been proposed, for example, in Japanese Utility Model Publication No. 62-114456 (published on July 21, 1987).

Therefore, if the lead frame having no dam bar is used and the removal of the resin burr is not necessary, the dam bar is not required to be cut and the above-mentioned problems are solved.

Therefore, an object of the present invention is to provide a technique relating to a sealed semiconductor device using a lead frame of a type having no dam bar.

The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

[0012]

The typical ones of the inventions disclosed in the present application will be outlined below.

That is, according to the method of manufacturing an encapsulated semiconductor device of the present invention, an inner lead portion which has a first end portion for electrically connecting a lead and a semiconductor chip and is encapsulated in a molding material, and a semiconductor A plurality of outer leads, each having a second end electrically connecting the chip to the outside and being separated from each other at a position other than the second end, and protruding from the molding material. A lead frame having elongated leads is formed, and a strip-shaped member made of an adhesive electrical insulating material is positioned on the mold line of the lead frame and attached at a substantially right angle to the length direction of the lead, and at least the strip-shaped member is formed. Part of the inner leads are pressed under pressure to form a blocking bank between at least a part of adjacent inner leads, and the semiconductor chip is fixed to the lead frame. The lead frame is tightened by electrically connecting the semiconductor chip and the lead, disposing the lead frame including the blocking bank and the semiconductor chip at a required position of the molding apparatus, and closing the molding apparatus. Inject the molding material into
The blocking bank prevents the molding material from leaking out of the molding apparatus and seals the inner lead portion and the semiconductor chip.

The sealed semiconductor device of the present invention includes a semiconductor chip having a predetermined integrated circuit formed therein, and an elongated lead having an inner lead portion and an outer lead portion formed therein and electrically connected to the semiconductor chip. A molding material in which the inner lead portion of the lead and the semiconductor chip are sealed, the outer lead portion is projected from the molding material, and at least a portion of the inner lead portion of the adjacent lead is partially covered with the molding material. A blocking bank of an electrically insulating material sandwiched between the peripheral portions is formed.

[0015]

According to the technique of the sealed semiconductor device as described above,
At the time of molding, the function of the blocking bank formed between the leads prevents the molding material injected into the molding device from leaking from the molding device.

Even if the dam bar is not formed on the lead frame, resin burrs do not occur in the molding process. Further, since the blocking bank has an insulating property, the leads are not electrically connected to each other even if the blocking bank remains in the semiconductor device.

[0017]

Embodiments of the present invention will now be described in more detail with reference to the drawings.

(Embodiment 1) FIG. 1 is a plan view showing a state in which a strip-shaped member is attached onto a lead frame in the manufacture of a sealed semiconductor device according to an embodiment of the present invention, and FIG. 2 is a line II-II in FIG.
2 is a sectional view showing a state in which the base film is removed from the strip-shaped member on the lead frame in FIG. 2, and FIG. 4 is a strip-shaped member before the molding step of the semiconductor device using the lead frame in FIG. 5 is an explanatory view showing a pressed state of the semiconductor device, FIG. 5 is an explanatory view showing a molding process of a semiconductor device using the lead frame of FIG. 1, and FIG. 6 is a sealed semiconductor device manufactured using the lead frame of FIG. FIG.

As shown in FIG. 1, the lead frame 1 of this embodiment has a die pad (tab) 3 to which a semiconductor chip 2 is bonded, located at the center, and the die pad 3 is attached to a frame outer frame 5 by a tab suspension lead 4. It is supported so as to be connected. A plurality of elongated leads 6 that are not in contact with the die pad 3 are formed substantially radially from the frame outer frame 5 toward the die pad 3.

Each of the leads 6 is formed with an inner lead portion 6a sealed in a resin (molding material) 7 (FIG. 5) and an outer lead portion 6b protruding from the molding material 7. The lead 6 is provided on the inner lead portion 6a.
Is provided with a _first end portion 6a ₁ for providing an area for electrical connection between the semiconductor chip 2 and the semiconductor chip 2, and the outer lead portion 6b is provided with an area for providing an area for electrical connection between the semiconductor chip 2 and the outside. Two ends 6b ₁ are provided.

The outer lead portion 6b of the lead 6 is located outside the mold line ML, which is a boundary line between the inner lead portion 6a of the lead 6 and the outer lead portion 6b, of the frame outer frame 5 near the second end portion 6b ₁ . Except for the parts, they are separated from each other.

The die pad 3, the tab suspension lead 4 and the inner lead portion 6a of the lead 6 serve as a sealing region for the resin 7 during molding.

Therefore, the lead frame 1 of this embodiment
Is not formed with a dam bar (tie bar), and instead, the strip-shaped member 9 is adjacent to the tightening portion P which is tightened by the clamp portion 8a (FIG. 4) of the molding die 8 of the molding apparatus of the lead 6. 6 are attached so that they are interconnected. That is, the strip-shaped member 9 is arranged such that the edge of the inner lead portion 6a of the lead 6 closer to the _first end 6a ₁ is positioned on the mold line ML of the lead 6 or inside thereof. Attached on top of it at approximately right angles to its length.

As shown in FIG. 2, the strip-shaped member 9 is composed of a base film 9a and an adhesive layer 9b adhered to the base film 9a. The base film 9a is made of, for example, a polyimide resin, and the adhesive layer 9b is made of a material having an insulating property and heat resistance to withstand the temperature in the molding process, for example, an epoxy resin. The adhesive layer 9b can withstand the extrusion (injection pressure) of the resin 7 in the molding step described later.

As shown in FIGS. 2 and 3, the adhesive layer 9b has a thickness substantially equivalent to that of the lead frame 1, and the strip-shaped member 9 is attached to the lead frame 1 and then the base film of the adhesive layer 9b. 9 a and the lead frame 1 due to a difference in adhesive force,
It can be peeled off from b.

Next, the lead frame 1 to which the strip-shaped member 9 is attached is set in the molding die 8 of the molding apparatus after the base film 9a of the strip-shaped member 9 is peeled off, as shown in FIG. . Therefore, only the adhesive layer 9b remains on the lead frame 1.

Next, as shown in FIG. 5, when the upper and lower mold dies 8 are joined, the clamp portion 8a of the mold dies 8 becomes at least one of the adhesive layers 9b (FIG. 1) at the tightening portion P of the lead 6. The pressure-sensitive adhesive layer 9b is pressed between adjacent leads 6 to form a blocking bank 9b ₁ having electrical insulation between the leads 6. Here, the pressing force of the upper and lower molding dies 8 can be, for example, 30 t per one die, and the die temperature can be 170 to 180 ° C., for example.

Here, as described above, the adhesive layer 9b has heat resistance and, moreover, has the function of withstanding the extrusion (pouring force) of the resin 7. Therefore, the blocking bank 9b formed by the adhesive layer 9b pressed between the leads 6 is formed.
₁ prevents the resin 7 injected during the molding process from leaking from the molding die 8. That is, the blocking bank 9b ₁ is made of a resin having an electrically insulating property in this embodiment, and functions as a conventional dam bar.

Then, when the injection of the resin 7 into the molding die 8 is completed and the molding die 8 is opened again, the molding process is completed.

At this time, since the resin 7 is prevented from leaking by the blocking bank 9b _1, a dam bar formed outside the mold line ML of the lead frame 1 is not provided, so that resin burr does not occur. Further, since the blocking bank 9b ₁ has an insulating property, even if the blocking bank 9b ₁ remains in the semiconductor package completed by molding the leads 6 into a predetermined shape as shown in FIG. The six terminals are not electrically connected to each other.

(Embodiment 2) FIG. 7 is a plan view showing a state in which a strip-shaped member is attached onto a lead frame in the manufacture of a sealed semiconductor device according to another embodiment of the present invention, and FIG. 8 is a line VIII in FIG.
9 is a sectional view showing a flattening process step of the strip-shaped member attached to the lead frame shown in FIG. 7, FIG. 11 is a sectional view of an essential part of FIG. 10, and FIG. FIG. 13 is a cross-sectional view showing a lead frame whose band-shaped member is flattened, FIG. 13 is a perspective view of an essential part of FIG. 12, and FIGS. 14 to 20 show a manufacturing process of a semiconductor device using a lead frame whose band-shaped member is flattened. It is a sectional view and a plan view.

As shown in FIG. 7, the strip-shaped member 12 is provided on the lead frame 11 in this embodiment in the same positional relationship as in the first embodiment, and the dam bar as seen in the conventional lead frame is provided. Is not formed. Figure 7
As shown in FIG. 8, the strip-shaped member 12 includes a base film (polyimide film) 12a having heat resistance, insulation and thermoplasticity, and heat resistance, insulation and thermoplasticity formed on the base film 12a. Mold line ML composed of adhesive layer (epoxy resin) 12b
It is attached on the lead frame 11 so as to straddle over.

The flattening (clamping) process of the strip-shaped member 12 attached to the lead frame 11 is performed in the following steps.

First, as shown in FIG. 9, the lead frame 11 is placed on a clamp die 15 located below and heated to, for example, about 300.degree.
2 (FIG. 7) is heated to a similar temperature. At this time, the adhesive layer 12b of the belt-shaped member 12 is not deformed due to thermosetting property, but the base film 12a is softened as the temperature becomes higher because of the thermoplastic property.

As shown in FIG. 10, in this state, the upper clamp metal mold 14 and the lower clamp metal mold 15 are brought into close contact with each other to make about 1 t (that is, 1 / t of the pressing force at the time of molding). The band-shaped member 12 is clamped with a pressing force of about 30) to form the blocking bank 12c having heat resistance and insulation. At this time, the belt-shaped member 12
The clamped portion of is deformed by the clamp pressure and pushed between the leads 18, but the lead 18 is not deformed by the insertion force because the band-shaped member 12 itself is softened.

Here, the positional relationship among the clamp dies 14, 15 and the belt-shaped member 12 and the mold line ML during clamping is as shown in FIG. That is, the clamp parts of the clamp dies 14 and 15 are located outside the mold line ML of the strip-shaped member 12 or outside the boundary line CL between the inner lead part 18a and the outer lead part 18b located inside the mold line ML. The region or the entire region of the belt-shaped member 12 is formed.

At least a part thereof is clamped (flattened) by the clamp dies 14 and 15 and pushed into the lead 18, and the band-shaped member 12 formed into the blocking bank 12c is a lead frame as shown in FIGS. 12 and 13. The 11th surface is flattened. Since the clamping process is performed separately from the sealing process, the temperature and the pressing force of the clamping process can be set independently of the temperature and the pressing force in the sealing process, that is, independently. become. That is, the temperature and the pressing force for the clamp can be set to the optimum conditions capable of forming the desired blocking bank 12c without causing the careless deformation or the displacement of the lead 18.

In the lead frame 11 on which the blocking bank 12c is formed by such a clamp, as shown in FIG. 14, the semiconductor chip 16 is attached to the die pad 17.
Are die-bonded. This die bonding is
It is carried out at a temperature not higher than the heat resistant temperature of the blocking bank 12c and at a temperature not lower than the temperature in the resin molding process of the subsequent process.

After die bonding, as shown in FIG. 15, the bonding pad (not shown) of the semiconductor chip 16 and the lead 18 of the lead frame 11 are electrically connected by the bonding wire 19.

The wire-bonded lead frame 11 is transferred to a resin mold sealing step.

First, the lead frame 11 electrically connected to the semiconductor chip 16 is pressed by the upper and lower mold dies 20 and 21 heated to, for example, about 170.degree. Is clamped at. At this time, as shown in FIG.
Since at least a part of the flat portion of the blocking bank 12c provided in the mold is clamped by the molding dies 20 and 21, the blocking bank 12c
In the lead frame 11 provided with c, each flattened portion of the blocking bank 12c is a mold line ML.
Or the opposite edge of each flattened portion as seen from the length direction of the lead 18 is formed on the mold line M.
It is positioned so as to be on L, that is, on the innermost circumference of the clamp portion of the molding dies 20 and 21.

Next, as shown in FIG. 17, the cavity 2 constituted by the closed molding dies 20 and 21.
A resin (molding material) 22 is filled in the inside 3. 1 is a sectional view taken along line XVIII-XVIII of FIG. 16 at this time.
As shown in FIG. 8, a part or the whole of the belt-shaped member 12 is pressed between the leads 18 to form the blocking bank 12c. Therefore, the resin 22 is molded by the blocking bank 12c during the molding process.
21 does not leak outside.

After the resin 22 is hardened, the lead frame 11 is taken out of the molding dies 20, 21.
After being taken out, the blocking bank 12c at the positions shown in FIGS. 19A, 19B and 19C has an insulating property, so that the blocking bank 12c is removed like a dam bar after the conventional sealing step. No need to remove. Therefore, there is no generation of resin burr or resin waste when cutting the dam bar as in the conventional case.

After sealing, as shown in FIGS. 20A and 20B, the frame outer frame 24 of the lead frame 11 is formed.
(FIG. 19C) is cut, and the outer lead portion 18b protruding from the sealing portion is molded to finally complete the semiconductor device. Even when the outer lead portion 18b is formed, good molding can be performed because no resin burr or resin dust is generated.

Although the invention made by the present inventor has been specifically described based on the embodiments, the present invention is not limited to the above embodiments, and various modifications can be made without departing from the scope of the invention. Needless to say.

For example, the adhesive layers 9b and 12b used in the above-mentioned embodiment are made of, for example, an epoxy resin, but are not limited to this, and the insulating properties, heat resistance, and the resin 7, 22 are not limited thereto. Any material can be used as long as it has a viscosity that can withstand extrusion, and for example, a thermosetting material can be used.

The adhesive layers 9b and 12b should have a width such that at least a part of them is pressed by the clamp portions of the molding dies 8, 20, and 21, and the leads 6, 18 are provided.
Adhesion to the base film 9a, as in the above embodiment,
Instead of using 12a, it may be directly attached to the leads 6 and 18.

Further, the base films 9a and 12a used in the above embodiments are not limited to polyimide resins, and various types can be used as long as they can be peeled off from the adhesive layers 9b and 12b. Further, since the base films 9a and 12a are peeled off before the molding step, they do not need to have an insulating property.

The heating temperature of 300 ° C. and the clamping pressure of 1 t in the second embodiment are not numerical values limited to these values, and are set to arbitrary values by the softening characteristics of the belt-shaped member 12 so that the leads 18 are not deformed after clamping. It is what is done. Similarly, in the second embodiment, the semiconductor device is manufactured by forming the blocking bank 12c with the clamp molds 14 and 15 in the state of the lead frame 11, but the blocking bank 12c is formed before the molding step. That is, it can be performed after the electrical connection between the bonding pad and the lead 18 is made and before the molding step.

In the lead frames 1 and 11 of this embodiment, the outer lead portions 6b and 1 are provided on the two opposite side surfaces.
Although it is a two-way lead type in which 8b is formed, it may be used for lead frames of other forms.

[0051]

The effects obtained by the typical ones of the inventions disclosed in this application will be briefly described as follows.

(1) The function of the blocking bank prevents the injected molding material from leaking from the molding die in the molding process.

(2) Therefore, even if the dam bar is not formed on the lead frame, it is not necessary to remove the molding material after the molding process, so that the dam bar cutting process and the protruding resin burr removing process can be omitted. Cost reduction can be realized.

(3) Further, even in a lead frame having a very narrow lead interval such as a lead frame used in a fine-pitch multi-pin LSI, the dam bar cutting process and the resin burr removal that may deform the leads are removed. Since no process is required, it is possible to realize a stable molded state.

(4) Further, since the blocking bank has an insulating property, the leads are not electrically connected to each other even if the blocking bank remains in the semiconductor device, and the molding process is performed. It is not necessary to remove the part of the blocking bank that protrudes from the semiconductor device later.

(5). By omitting the dam bar cutting and resin burr removal steps, it is possible to manufacture a semiconductor device of good quality at low cost and without lead deformation.

(6). A lead frame used for a fine pitch multi-pin LSI can be easily realized.

[Brief description of drawings]

FIG. 1 is a plan view showing a state in which a strip-shaped member is attached to a lead frame in manufacturing an encapsulated semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a sectional view taken along line II-II in FIG.

3 is a cross-sectional view showing a state where the base film is removed from the strip-shaped member on the lead frame in FIG.

FIG. 4 is an explanatory view showing a pressed state of a belt-shaped member before a molding process of a semiconductor device using the lead frame of FIG.

5A and 5B are explanatory views showing a molding process of a semiconductor device using the lead frame of FIG.

6 is a front view of an encapsulated semiconductor device manufactured using the lead frame of FIG.

FIG. 7 is a plan view showing how a strip-shaped member is attached onto a lead frame in the manufacture of the sealed semiconductor device according to the second embodiment of the present invention.

8 is a cross-sectional view taken along the line VIII-VIII of FIG.

9 is a cross-sectional view showing a flattening process step of a strip-shaped member attached to the lead frame shown in FIG.

10 is a cross-sectional view showing a flattening process step of the strip-shaped member attached to the lead frame shown in FIG.

11 is a cross-sectional view of an essential part of FIG.

FIG. 12 is a cross-sectional view showing a lead frame whose band-shaped member is flattened.

13 is a perspective view of an essential part of FIG.

14 is a cross-sectional view showing a state where a semiconductor chip is die-bonded to the lead frame shown in FIG.

15 is a cross-sectional view showing a state in which the lead frame shown in FIG. 7 is wire-bonded.

16 is a cross-sectional view showing a clamped state of the lead frame shown in FIG. 7 by a molding die.

FIG. 17 is a cross-sectional view showing a state where the lead frame shown in FIG. 7 is filled with a molding material.

18 is a sectional view taken along line XVIII-XVIII in FIG.

19 (a) is a cross-sectional view showing the lead frame shown in FIG. 7 after completion of a molding process, and FIG. 19 (b) is a perspective view of an essential part thereof.
FIG. 3C is a plan view of the relevant part.

FIG. 20 (a) is a perspective view with a part cut away showing the outer lead portion of the lead frame shown in FIG. 7, after being molded;
Is a sectional view thereof.

FIG. 21 is a plan view showing a conventional lead frame.

[Explanation of symbols]

1 lead frame 2 semiconductor chip 3 die pad (tab) 4 tab suspension lead 5 frame outer frame 6 lead 6a inner lead portion 6a ₁ first end portion 6b outer lead portion 6b ₁ second end portion 7 resin (molding material) 8 mold Mold 8a Clamping part 9 Band-shaped member 9a Base film 9b Adhesive layer 9b ₁ Blocking bank 11 Lead frame 12 Band-shaped member 12a Base film 12b Adhesive layer 12c Blocking bank 14 Clamping mold 15 Clamping mold 16 Semiconductor chip 17 Die pad 18 Lead 18a Inner Lead portion 18b Outer lead portion 19 Bonding wire 20 Molding die 21 Molding die 22 Resin (molding material) 23 Cavity 24 Frame outer frame 31 Lead frame 36 Lead 40 Dambar CL boundary Line ML mold line P tightening site

Front Page Continuation (72) Inventor Yuu Shirai 2326 Imai, Ome City, Tokyo Inside Hitachi Device Development Center (72) Inventor Takayuki Okinaga 5-20-1 Kamimizuhonmachi, Kodaira-shi, Tokyo Super LSI Engineering Co., Ltd. (72) Inventor Sei Horiuchi 5-20-1 Kamimizuhonmachi, Kodaira-shi, Tokyo Hitate Super LSI Engineering Co., Ltd. (72) Inventor Ematata Koji 5-20-1 Kamimizuhoncho, Kodaira-shi, Tokyo Hirate Super Co., Ltd. within LSI Engineering Co., Ltd. (72) Makoto Omata 5-20-1 Kamimizuhoncho, Kodaira-shi, Tokyo Hirate LSI Engineering Co., Ltd.

Claims (9)

[Claims] 1. An inner lead portion having a first end portion for electrically connecting a lead and a semiconductor chip and sealed in a molding material, and a first electrical portion for electrically connecting the semiconductor chip and the outside. A plurality of elongated leads each having two end portions, each having an outer lead portion that is communicated only at the second end portion side and is separated from each other at other positions, and that is protruded from the molding material. A strip-shaped member formed of an adhesive electrically insulating material is formed on the molding line of the lead frame, and is attached substantially at right angles to the longitudinal direction of the lead. At least a portion of the inner lead portion is pressed between the leads by forming a blocking bank of the strip-shaped member between at least a portion of the adjacent inner lead portion, A conductor chip is fixed to the lead frame, the semiconductor chip and the lead are electrically connected, and the lead frame including the blocking bank and the semiconductor chip is arranged at a required position of the molding apparatus. By tightening the lead frame by closing the molding device, injecting the molding material into the molding device, and preventing the molding material from leaking out of the molding device by the blocking bank. A method for manufacturing an encapsulated semiconductor device, comprising encapsulating the inner lead portion and the semiconductor chip. 2. The method of manufacturing an encapsulated semiconductor device according to claim 1, wherein the outer lead portion is shaped into a predetermined shape after the inner lead portion of the lead and the semiconductor chip are encapsulated. 3. The strip-shaped member is composed of a base film having electrical insulation properties and an adhesive layer formed on the base film and made of an adhesive material having electrical insulation properties. 3. The method for manufacturing an encapsulated semiconductor device according to claim 1, wherein the base film is removed and only the adhesive layer is left, and the base film is attached to the leads. 4. The method of manufacturing an encapsulated semiconductor device according to claim 3, wherein the base film is made of a polyimide resin, and the adhesive layer is made of an epoxy resin. 5. At least a part of the strip-shaped member is pressurized at a pressure lower than a pressure at which the lead frame is clamped during a molding operation and at a temperature higher than a temperature at which the molding material is injected. The method for manufacturing an encapsulated semiconductor device according to any one of claims 1 to 4, wherein: 6. The manufacturing of a sealed semiconductor device according to claim 3, wherein the base film is made of an insulating thermoplastic material, and the adhesive layer is made of an insulating thermosetting material. Method. 7. A semiconductor chip on which a predetermined integrated circuit is formed, an elongated lead having an inner lead portion and an outer lead portion electrically connected to the semiconductor chip, and the inner lead portion of the lead. A molding material that seals the semiconductor chip, the outer lead portions of the leads are projected from the molding material, and at least a portion of the inner lead portions of the adjacent leads are partially molded by the mold. A sealed semiconductor device, characterized in that a blocking bank of an electrically insulating material sandwiched between peripheral edges of the material is formed. 8. The blocking bank formed between the adjacent leads is located at a part of the inner lead of the adjacent lead and a part of the outer lead of the adjacent lead. The encapsulated semiconductor device according to claim 7, wherein the molded semiconductor device projects from the molding material. 9. The sealed semiconductor device according to claim 7, wherein the blocking bank includes a base film made of a polyimide resin and an adhesive layer made of an epoxy resin formed on the base film.