JPH06180858A - Optical disk and its production - Google Patents
Optical disk and its productionInfo
- Publication number
- JPH06180858A JPH06180858A JP4330540A JP33054092A JPH06180858A JP H06180858 A JPH06180858 A JP H06180858A JP 4330540 A JP4330540 A JP 4330540A JP 33054092 A JP33054092 A JP 33054092A JP H06180858 A JPH06180858 A JP H06180858A
- Authority
- JP
- Japan
- Prior art keywords
- recording film
- film
- transparent substrate
- recording
- optical disc
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 239000013078 crystal Substances 0.000 claims abstract description 30
- 239000000463 material Substances 0.000 claims abstract description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000001301 oxygen Substances 0.000 claims abstract description 14
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 14
- 238000010030 laminating Methods 0.000 claims abstract description 3
- 230000001590 oxidative effect Effects 0.000 claims abstract description 3
- 230000003647 oxidation Effects 0.000 claims description 22
- 238000007254 oxidation reaction Methods 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 15
- 239000002245 particle Substances 0.000 claims description 12
- 229910052714 tellurium Inorganic materials 0.000 claims description 10
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000001771 vacuum deposition Methods 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 230000007797 corrosion Effects 0.000 abstract description 21
- 238000005260 corrosion Methods 0.000 abstract description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 17
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 15
- 229910001882 dioxygen Inorganic materials 0.000 description 12
- 229920005989 resin Polymers 0.000 description 11
- 239000011347 resin Substances 0.000 description 11
- 238000007740 vapor deposition Methods 0.000 description 11
- 239000007789 gas Substances 0.000 description 8
- 229910001873 dinitrogen Inorganic materials 0.000 description 7
- 239000004033 plastic Substances 0.000 description 7
- 229920003023 plastic Polymers 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229920001220 nitrocellulos Polymers 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000000020 Nitrocellulose Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000005357 flat glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- UYTPUPDQBNUYGX-UHFFFAOYSA-N guanine Chemical compound O=C1NC(N)=NC2=C1N=CN2 UYTPUPDQBNUYGX-UHFFFAOYSA-N 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000012466 permeate Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- -1 polypropylene Polymers 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910001152 Bi alloy Inorganic materials 0.000 description 1
- 229910000978 Pb alloy Inorganic materials 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910001245 Sb alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- SZDIRPMKBZNQLZ-UHFFFAOYSA-N [Mn].[Sb].[Pt] Chemical compound [Mn].[Sb].[Pt] SZDIRPMKBZNQLZ-UHFFFAOYSA-N 0.000 description 1
- 239000002140 antimony alloy Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- KYAZRUPZRJALEP-UHFFFAOYSA-N bismuth manganese Chemical compound [Mn].[Bi] KYAZRUPZRJALEP-UHFFFAOYSA-N 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 229910001291 heusler alloy Inorganic materials 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
- Manufacturing Optical Record Carriers (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、光ディスク及びその製
造方法に係り、特に、耐腐食性に優れた記録膜の構造及
び成膜方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical disk and a manufacturing method thereof, and more particularly to a structure of a recording film having excellent corrosion resistance and a film forming method.
【0002】[0002]
【従来の技術】透明基板上に担持された記録膜が酸化さ
れると、記録感度及び再生感度が低下して記録エラー率
及び再生エラー率が上昇し、酸化の程度がさらに進行す
ると、情報の記録・再生が不可能になる。2. Description of the Related Art When a recording film carried on a transparent substrate is oxidized, the recording sensitivity and the reproducing sensitivity are lowered, the recording error rate and the reproducing error rate are increased, and when the degree of oxidation further progresses, the information Recording / playback becomes impossible.
【0003】かかる不都合を防止するため、例えば特開
平3−120634号公報に記載されているように、テ
ルル記録膜の外面(透明基板に接しない面)に強制酸化
膜を形成し、この強制酸化膜にて下層の記録膜を腐食か
ら保護するようにした光ディスクが提案されている。In order to prevent such inconvenience, a forced oxide film is formed on the outer surface of the tellurium recording film (the surface not in contact with the transparent substrate) and the forced oxidation is carried out, as described in, for example, Japanese Patent Laid-Open No. 3-120634. An optical disk has been proposed in which a lower recording film is protected from corrosion by a film.
【0004】[0004]
【発明が解決しようとする課題】前記公知例に記載の光
ディスクは、記録膜の外面が不動態化されるので、記録
前においては記録膜の外面が腐食性の雰囲気、例えば高
湿度の空気にさらされても記録膜の内部にまで酸化が進
行せず、記録膜を安定に保存できる。Since the outer surface of the recording film is passivated in the optical disk described in the above-mentioned known example, the outer surface of the recording film is exposed to a corrosive atmosphere, for example, high humidity air before recording. Even if exposed, the oxidation does not proceed to the inside of the recording film, and the recording film can be stably stored.
【0005】ところが、テルル記録膜は、記録用光ビー
ムの照射部に穴又は窪み(ピット)を形成することによ
って情報を記録するので、前記公知例に係る光ディスク
も、記録後は不動態化膜である強制酸化膜が除去される
ために、ピット形成部から腐食が進行する。また、一般
にテルル記録膜の下地には記録感度を改善するための下
地膜、例えばニトロセルロース膜が形成されるので、前
記公知例のように穴あけ形の記録膜を有する光ディスク
は、記録後、記録膜に形成されたピットから空気中の水
分が下地膜に浸透し、下地膜側の界面から記録膜の腐食
が進行する。さらに、透明基板としてプラスチック基板
を用いた場合には、透明基板側から空気中の水分が浸透
するので、前記公知例に記載の光ディスクでは、記録膜
の腐食を防止することができない。However, since the tellurium recording film records information by forming holes or pits (pits) in the irradiation portion of the recording light beam, the passivation film of the known optical disc is also recorded. Therefore, the forced oxide film is removed, so that corrosion progresses from the pit formation portion. Further, since an underlayer film for improving recording sensitivity, for example, a nitrocellulose film is generally formed on the underlayer of a tellurium recording film, an optical disk having a perforated recording film as in the above-mentioned known example is recorded after recording. Moisture in the air permeates into the base film through the pits formed in the film, and the recording film progresses from the interface on the side of the base film. Furthermore, when a plastic substrate is used as the transparent substrate, moisture in the air permeates from the transparent substrate side, so that the optical disc described in the above-mentioned known example cannot prevent corrosion of the recording film.
【0006】本発明は、上記従来技術の不備を解決する
ためになされたものであって、その第1の目的は、記録
の前後及び透明基板の種類等に拘らず記録膜を安定に保
存できる長期保存性に優れた光ディスクを提供すること
にあり、またその第2の目的は、そのような光ディスク
を製造するに好適な方法を提供することにある。The present invention has been made to solve the deficiencies of the above-mentioned prior art, and the first object thereof is to stably store a recording film regardless of before and after recording and the type of transparent substrate. It is to provide an optical disc excellent in long-term storage property, and a second object thereof is to provide a method suitable for manufacturing such an optical disc.
【0007】[0007]
【課題を解決するための手段】本発明は、前記第1の目
的を達成するため、透明基板の片面に直接又は他の膜を
介して記録膜が形成された光ディスクにおいて、前記記
録膜を、結晶粒界がその記録膜材料の酸化物で覆われた
結晶粒の積層体にて形成した。前記記録膜としては、例
えばテルル又はテルルを主成分とする合金など、結晶質
の金属材料からなるものが好適である。また、この記録
膜の透明基板側の界面に、強制酸化層を形成すれば、さ
らに良好な耐食性が得られる。In order to achieve the first object, the present invention provides an optical disc in which a recording film is formed on one surface of a transparent substrate directly or via another film, The crystal grain boundary was formed of a laminated body of crystal grains covered with an oxide of the recording film material. The recording film is preferably made of a crystalline metal material such as tellurium or an alloy containing tellurium as a main component. Further, if a forced oxidation layer is formed at the interface of this recording film on the transparent substrate side, even better corrosion resistance can be obtained.
【0008】一方、前記第2の目的を達成するため、本
発明は、透明基板の片面に直接又は他の膜を介して記録
膜を真空成膜する光ディスクの製造方法において、前記
記録膜の真空成膜時、有酸素の真空雰囲気中で記録膜材
料を粒子化して当該粒子の表面を選択的に酸化させ、こ
の表面が酸化された粒子を前記透明基板上又は他の膜上
に所定の膜厚まで積層するという方法を採った。また、
記録膜の耐食性をさらに高めるため、記録膜の真空成膜
中又は真空成膜後に、当該記録膜に強制酸化処理を施
し、透明基板側の界面に強制酸化層を形成するもでき
る。前記記録膜の強制酸化処理方法としては、紫外線照
射又は加熱、もしくは加熱下での紫外線照射などがあ
る。On the other hand, in order to achieve the above-mentioned second object, the present invention provides a method for manufacturing an optical disk in which a recording film is vacuum-deposited on one surface of a transparent substrate directly or via another film, and the vacuum of the recording film is used. At the time of film formation, the recording film material is made into particles in an oxygen-containing vacuum atmosphere to selectively oxidize the surface of the particles, and the particles whose surfaces have been oxidized are formed into a predetermined film on the transparent substrate or another film. The method of laminating up to the thickness was adopted. Also,
In order to further increase the corrosion resistance of the recording film, the recording film may be subjected to a forced oxidation treatment during or after the vacuum deposition of the recording film to form a forced oxidation layer on the interface on the transparent substrate side. Examples of the method for forcibly oxidizing the recording film include irradiation with ultraviolet light or heating, or irradiation with ultraviolet light under heating.
【0009】[0009]
【作用】結晶粒をその記録膜材料の酸化物で覆うと、結
晶粒の界面が不動態化されるので、結晶粒内部の耐食性
が改善される。したがって、記録膜の外面側あるいは基
板側などいずれの方向から水分が侵入したとしても高い
耐食性を発揮することができ、ピット形成後の下地膜側
からの腐食の問題、及びプラスチック基板を用いた場合
の透明基板側からの腐食の問題を解決できる。また、情
報記録によって記録膜の一部にピットが形成された場合
にも、ピット周囲の結晶粒が不動態化膜である強制酸化
層にて覆われているので、耐食性が劣化しない。When the crystal grains are covered with the oxide of the recording film material, the interface between the crystal grains is passivated, so that the corrosion resistance inside the crystal grains is improved. Therefore, high corrosion resistance can be exhibited even if moisture enters from any direction such as the outer surface side or the substrate side of the recording film, the problem of corrosion from the underlying film side after pit formation, and the case of using a plastic substrate. Can solve the problem of corrosion from the transparent substrate side. Further, even when a pit is formed in a part of the recording film by the information recording, the crystal grains around the pit are covered with the forced oxidation layer which is the passivation film, so that the corrosion resistance does not deteriorate.
【0010】一方、製造方法については、一般に記録膜
は真空蒸着やスパッタリングなどの真空成膜法によって
形成されるが、ベルジャー(真空成膜室)内に適量の有
酸素ガス(例えば、純酸素や清浄空気)を供給しつつ成
膜を行なうと、蒸発源あるいはターゲットから発生した
記録膜材料の粒子表面が透明基板上に堆積されるまでの
過程で酸化される。よって、透明基板上に結晶粒界が酸
化層で覆われた記録膜を形成できる。On the other hand, regarding the manufacturing method, generally, the recording film is formed by a vacuum film forming method such as vacuum deposition or sputtering. However, an appropriate amount of aerobic gas (for example, pure oxygen or pure oxygen) is formed in a bell jar (vacuum film forming chamber). When film formation is performed while supplying clean air), the particle surface of the recording film material generated from the evaporation source or the target is oxidized in the process of being deposited on the transparent substrate. Therefore, a recording film whose crystal grain boundaries are covered with an oxide layer can be formed on the transparent substrate.
【0011】[0011]
【実施例】図1に、本発明に係る光デイスクの断面構造
の第1例を示す。本例の光ディスクは、透明基板1が、
平行平板状のガラス板2と、このガラス板2上に形成さ
れたUV(紫外線硬化)樹脂層3と、このUV樹脂層3
上に形成された下地膜4とから構成され、この下地膜4
上に記録膜5が被着されている。同図中の符号6は、例
えば記録/再生用光ビームの案内溝やアドレス信号を記
録したプリピット列などのプリフォーマットパターンを
示している。このプリフォーマットパターン6は、下地
膜4の記録膜形成面に転写することもできるし、UV樹
脂層3の下地膜形成面に転写することもできる。後者の
場合には、プリフォーマットパターン6をUV樹脂層3
に転写した後、その転写面に下地膜4が形成される。1 shows a first example of a sectional structure of an optical disk according to the present invention. In the optical disc of this example, the transparent substrate 1 is
Parallel flat glass plate 2, UV (ultraviolet curing) resin layer 3 formed on the glass plate 2, and UV resin layer 3
The base film 4 and the base film 4 formed on the base film 4.
A recording film 5 is deposited on top. Reference numeral 6 in the figure indicates a pre-format pattern such as a guide groove of a recording / reproducing light beam or a pre-pit row in which an address signal is recorded. The preformat pattern 6 can be transferred to the recording film forming surface of the base film 4 or can be transferred to the base film forming surface of the UV resin layer 3. In the latter case, the preformat pattern 6 is applied to the UV resin layer 3
After the transfer, the base film 4 is formed on the transfer surface.
【0012】図2に、本発明に係る光デイスクの断面構
造の第2例を示す。本例の光ディスクは、透明基板1
が、片面にプリフォーマットパターン6が転写されたプ
ラスチックにて形成されており、このプラスチック基板
1のプリフォーマットパターン形成面に下地膜4が被着
され、さらにこの下地膜4上に記録膜5が被着されてい
る。プラスチック基板材料としては、透明基板1は、例
えばポリカーボネート、ポリメチルメタクリレート、ポ
リプロピレン、ポリエステル、ポリ塩化ビニル、ポリア
ミド、ポリスチレン、ポリオレフィンなどのポリマー、
及びこれらの種々変性したポリマー、コポリマー、ブレ
ンド物などの熱可塑性樹脂、又は例えばエポキシ樹脂な
どの熱硬化性樹脂を用いることができる。FIG. 2 shows a second example of the sectional structure of the optical disk according to the present invention. The optical disc of this example has a transparent substrate 1.
However, the pre-format pattern 6 is transferred on one surface of the plastic substrate 1, the base film 4 is attached to the pre-format pattern forming surface of the plastic substrate 1, and the recording film 5 is further formed on the base film 4. It is covered. As the plastic substrate material, the transparent substrate 1 is, for example, a polymer such as polycarbonate, polymethylmethacrylate, polypropylene, polyester, polyvinyl chloride, polyamide, polystyrene, or polyolefin.
And thermoplastic resins such as various modified polymers, copolymers and blends thereof, or thermosetting resins such as epoxy resins can be used.
【0013】図1及び図2における記録膜5は、光ビー
ムの照射部にピットを形成することで情報の記録を行な
う所謂ライトワンス形の記録膜であって、例えばテル
ル、セレン、鉛、スズ、ビスマスなどのカルコゲン化物
によって形成できる。また、図1及び図2における下地
膜4は、前記記録膜5のピット形成を促進するために設
けられるものであって、例えばニトロセルロース、ポリ
テトラフルオロエチレン、ポリイミド、グアニン、金又
は金−スズ合金などによって形成できる。The recording film 5 in FIGS. 1 and 2 is a so-called write-once recording film for recording information by forming pits in the irradiation portion of the light beam. For example, tellurium, selenium, lead, tin. , Bismuth and other chalcogenides. The base film 4 in FIGS. 1 and 2 is provided to promote the formation of pits in the recording film 5, and is, for example, nitrocellulose, polytetrafluoroethylene, polyimide, guanine, gold or gold-tin. It can be formed of an alloy or the like.
【0014】図3に、本発明に係る光デイスクの断面構
造の第3例を示す。本例の光ディスクは、透明基板1
が、平行平板状のガラス板2と、このガラス板2上に形
成されたUV樹脂層3とから構成され、このUV樹脂層
3上に第1エンハンス膜7と、光磁気記録膜8と、第2
エンハンス膜9と、金属反射膜10とがこの順で被着さ
れている。なお、ガラス板2とUV樹脂層3とからなる
透明基板1に代えて、図2に示したプラスチック基板を
用いることもできる。FIG. 3 shows a third example of a sectional structure of an optical disk according to the present invention. The optical disc of this example has a transparent substrate 1.
Is composed of a parallel flat glass plate 2 and a UV resin layer 3 formed on the glass plate 2, and a first enhance film 7, a magneto-optical recording film 8 are formed on the UV resin layer 3. Second
The enhancement film 9 and the metal reflection film 10 are applied in this order. Instead of the transparent substrate 1 including the glass plate 2 and the UV resin layer 3, the plastic substrate shown in FIG. 2 can be used.
【0015】前記第1及び第2のエンハンス膜7,9
は、例えばシリコン、アルミニウム、ジルコニウム、チ
タン、タンタルなどの窒化物や酸化物からなる無機誘電
体によって形成できる。また、前記光磁気記録膜8は、
希土類−遷移金属系合金、白金−マンガン−アンチモン
系合金(ホイスラー合金)、マンガン−ビスマス系合
金、白金膜とコバルト膜との積層体などによって形成で
きる。さらに、前記金属反射膜10は、アルミニウム、
金、銀、白金、あるいはこれらの合金などをもって形成
できる。The first and second enhancement films 7 and 9
Can be formed of an inorganic dielectric material made of, for example, a nitride or an oxide such as silicon, aluminum, zirconium, titanium, or tantalum. Further, the magneto-optical recording film 8 is
It can be formed by a rare earth-transition metal alloy, a platinum-manganese-antimony alloy (Heusler alloy), a manganese-bismuth alloy, a laminate of a platinum film and a cobalt film, or the like. Further, the metal reflection film 10 is made of aluminum,
It can be formed of gold, silver, platinum, or an alloy thereof.
【0016】図4ないし図6に、前記記録膜5及び光磁
気記録膜8の組織を模型的に示す。図4の記録膜5
(8)は、結晶粒11の堆積体によって形成されてお
り、各結晶粒界が当該結晶粒を構成する記録膜材料の強
制酸化層12にて覆われている。なお、記録膜5(8)
を構成するすべての結晶粒界を強制酸化層12にて隙間
なく覆うことは事実上困難なのであって、図5に示すよ
うに、結晶粒界の全部又は一部が強制酸化層12にて覆
われていない結晶粒が含まれていても、またこのような
結晶粒の堆積体のみから記録膜5(8)が形成されてい
ても差し支えない。図6の記録膜5(8)は、各結晶粒
界が当該結晶粒を構成する記録膜材料の強制酸化層12
にて覆われた結晶粒11の堆積体によって形成されてお
り、かつ透明基板1側又は下地膜4側の界面にも強制酸
化層12がほぼ一様の厚さに形成されている。図6の実
施例においても、結晶粒界の全部又は一部が強制酸化層
12にて覆われていない結晶粒が含まれていたり、ある
いはこのような結晶粒の堆積体のみから記録膜5(8)
が形成されていても差し支えない。強制酸化層12に
は、記録膜材料に応じて、図9に例示する酸化物から選
択される少なくとも1種類の酸化物が含まれる。4 to 6 schematically show the structures of the recording film 5 and the magneto-optical recording film 8. Recording film 5 of FIG.
(8) is formed by a deposited body of crystal grains 11, and each crystal grain boundary is covered with a forced oxidation layer 12 of a recording film material that constitutes the crystal grains. The recording film 5 (8)
It is practically difficult to cover all of the crystal grain boundaries forming the structure with the forced oxidation layer 12 without any gap. Therefore, as shown in FIG. 5, all or part of the crystal grain boundaries are covered with the forced oxidation layer 12. It does not matter even if the recording film 5 (8) is formed only from the undeposited crystal grains or only from such a deposit of crystal grains. The recording film 5 (8) of FIG. 6 has a forced oxidation layer 12 of a recording film material in which each crystal grain boundary constitutes the crystal grain.
It is formed of a deposit of crystal grains 11 covered with, and the forced oxidation layer 12 is also formed at the interface on the transparent substrate 1 side or the base film 4 side with a substantially uniform thickness. Also in the embodiment shown in FIG. 6, the recording film 5 (including only some of the crystal grain boundaries whose crystal grain boundaries are not covered with the forced oxidation layer 12 or only the deposited body of such crystal grains). 8)
May be formed. The forced oxidation layer 12 contains at least one kind of oxide selected from the oxides illustrated in FIG. 9 depending on the recording film material.
【0017】図4及び図5の記録膜は、有酸素の真空雰
囲気中で記録膜材料を粒子化して当該粒子の表面を選択
的に酸化させ、この表面が酸化された粒子を前記透明基
板上又は他の膜上に所定の膜厚まで積層するという方法
で形成できる。具体的には、ベルジャー内を所定の高真
空度まで真空引きした後、当該ベルジャー内に適量の有
酸素ガス、例えば純酸素や清浄空気を供給しつつ真空蒸
着又はスパッタリングすることによって形成できる。す
なわち、この方法によると、蒸発源あるいはターゲット
から発生した記録膜材料の粒子が透明基板上に堆積され
るまでの過程で酸素にさらされ、表面のみが選択的に酸
化されので、前記組織の記録膜が形成される。また、図
6の記録膜は、前記の方法で透明基板上に記録膜を堆積
した後、透明基板側から紫外線を照射したり、又は加熱
したり、あるいは加熱下での紫外線を照射することなど
によって形成できる。In the recording film of FIGS. 4 and 5, the recording film material is made into particles in an oxygen-containing vacuum atmosphere to selectively oxidize the surfaces of the particles, and the particles whose surfaces are oxidized are deposited on the transparent substrate. Alternatively, it can be formed by a method of stacking another film to a predetermined thickness. Specifically, it can be formed by vacuuming the inside of the bell jar to a predetermined high degree of vacuum and then vacuum vapor deposition or sputtering while supplying an appropriate amount of oxygen-containing gas such as pure oxygen or clean air into the bell jar. That is, according to this method, the particles of the recording film material generated from the evaporation source or the target are exposed to oxygen in the process of being deposited on the transparent substrate, and only the surface is selectively oxidized. A film is formed. Further, the recording film of FIG. 6 is obtained by depositing the recording film on the transparent substrate by the above-mentioned method and then irradiating it with ultraviolet rays from the transparent substrate side, heating it, or irradiating it with ultraviolet rays under heating. Can be formed by.
【0018】以下に、より具体的な実施例を挙げ、本発
明の硬化を明らかにする。 〈実施例1〉所謂2P法によって、ガラス板の片面に、
膜厚が約70μmのUV樹脂層と、膜厚が約0.2μm
のニトロセルロース下地層を被着した後、UV樹脂層の
硬化むらあるいは反応むらを解消するため、これを80
℃の雰囲気中で2時間ベークし、図1に示した透明基板
を作製した。次いで、この透明基板をベルジャー内に収
納し、テルル:セレン:鉛=80:15:5の金属組成
比で真空蒸着を行ない、前記ニトロセルロース下地層上
に、テルル−セレン−鉛合金記録膜を真空蒸着した。記
録膜の蒸着に際しては、残留ガス成分を除去するために
ベルジヤー内を1×10~6(Torr)以下まで減圧
し、しかる後に、当該ベルジヤー内に純酸素ガスを導入
してベルジヤー内圧力を8×10~6(Torr)まで上昇
して蒸着を行った。最後に、記録膜が真空成膜された透
明基板を80℃の雰囲気中で1時間ベークし、記録膜を
結晶化すると共に各結晶粒界に酸素を拡散させて、結晶
粒界がテルル酸化膜(TeO2 )で覆われた記録膜を形
成した(図4及び図5参照)。The curing of the present invention will be clarified below with reference to more specific examples. <Example 1> By a so-called 2P method, on one surface of a glass plate,
UV resin layer with a thickness of about 70 μm and a thickness of about 0.2 μm
After applying the nitrocellulose base layer of No. 1, in order to eliminate uneven curing or uneven reaction of the UV resin layer
The transparent substrate shown in FIG. 1 was produced by baking for 2 hours in an atmosphere of ° C. Next, this transparent substrate was housed in a bell jar and vacuum-deposited at a metal composition ratio of tellurium: selenium: lead = 80: 15: 5 to form a tellurium-selenium-lead alloy recording film on the nitrocellulose underlayer. It was vacuum deposited. During the vapor deposition of the recording film, the pressure inside the bell jar was reduced to 1 × 10 to 6 (Torr) or less in order to remove the residual gas components, and then pure oxygen gas was introduced into the bell jar to adjust the pressure inside the bell jar to 8 × was elevated to the deposition to 10 ~ 6 (Torr). Finally, the transparent substrate on which the recording film is vacuum-formed is baked in an atmosphere of 80 ° C. for 1 hour to crystallize the recording film and diffuse oxygen into each crystal grain boundary, so that the crystal grain boundary is a tellurium oxide film. A recording film covered with (TeO 2 ) was formed (see FIGS. 4 and 5).
【0019】〈実施例2〉記録膜成膜時のベルジヤー内
圧力を5×10~6(Torr)の調節した。その他の諸条
件については、実施例1と同じにした。Example 2 The internal pressure of the bell jar at the time of forming the recording film was adjusted to 5 × 10 6 (Torr). Other conditions were the same as in Example 1.
【0020】〈実施例3〉記録膜成膜時のベルジヤー内
圧力を1×10~6(Torr)の調節した。その他の諸条
件については、実施例1と同じにした。<Embodiment 3> The pressure inside the bell jar at the time of forming the recording film was adjusted to 1 × 10 6 (Torr). Other conditions were the same as in Example 1.
【0021】〈比較例1〉ベルジヤー内に酸素ガスを導
入せず、ベルジヤー内を1×10~6(Torr)以下まで
真空引きした状態で記録膜の真空蒸着を行った。その他
の諸条件については、実施例1と同じにした。Comparative Example 1 The recording film was vacuum-deposited in a state in which oxygen gas was not introduced into the bell jar and the inside of the bell jar was evacuated to 1 × 10 to 6 (Torr) or less. Other conditions were the same as in Example 1.
【0022】図7に、情報が書き込まれた実施例1〜3
及び比較例1の光ディスクを気温が80℃、相対湿度が
50%の環境下に168時間放置した後の、情報ピツト
形成部における反射率の低下率を示す。このグラフ図か
ら明らかなように、有酸素雰囲気中で記録膜を真空蒸着
した実施例1〜3の光ディスクは、いずれも無酸素雰囲
気中で記録膜を真空蒸着した比較例1の光ディスクより
も反射率の低下率が低くなっており、下地膜側からの防
食に効果があることが判った。また、実施例1〜3の比
較から、導入酸素ガス量が多いほど高い防食効果を得ら
れることが判った。但し、真空蒸着時のベルジヤー内圧
力を1×10~5(Torr)よりも高くすると、記録膜が
変質して記録再生特性が劣化するため、真空蒸着時のベ
ルジヤー内圧力は、10~6(Torr)のオーダーに調整
することが好ましい。FIG. 7 shows Examples 1 to 3 in which information is written.
3 shows the reduction rate of the reflectance in the information pit forming part after the optical disk of Comparative Example 1 was left for 168 hours in an environment where the temperature was 80 ° C. and the relative humidity was 50%. As is clear from this graph, the optical disks of Examples 1 to 3 in which the recording film was vacuum-deposited in an oxygen-containing atmosphere were more reflective than the optical disk of Comparative Example 1 in which the recording film was vacuum-deposited in an oxygen-free atmosphere. The rate of decrease of the rate was low, and it was found that it was effective in preventing corrosion from the underlayer side. Further, from the comparison of Examples 1 to 3, it was found that the higher the amount of introduced oxygen gas, the higher the anticorrosion effect. However, when higher than Berujiya the pressure 1 × 10 ~ 5 during vacuum deposition (Torr), since the recording film is deteriorated altered by the recording and reproducing characteristics, Berujiya the pressure during the vacuum deposition was 10 through 6 ( Torr) is preferably adjusted.
【0023】〈実施例4〉ベルジャー内を1×10~
6(Torr)以下まで減圧した後、当該ベルジヤー内
に酸素ガス/窒素ガス比が20/80に調整された酸素
と窒素の混合ガスを導入して蒸着を行つた。蒸着時の真
空度は、8×10~6(Torr)とした。その他の諸条
件については、実施例1と同じにした。<Embodiment 4> The bell jar is filled with 1 × 10 to
After reducing the pressure to 6 (Torr) or less, a mixed gas of oxygen and nitrogen having an oxygen gas / nitrogen gas ratio adjusted to 20/80 was introduced into the bell jar to perform vapor deposition. The degree of vacuum during vapor deposition was set to 8 × 10 6 (Torr). Other conditions were the same as in Example 1.
【0024】〈実施例5〉ベルジャー内を1×10~
6(Torr)以下まで減圧した後、当該ベルジヤー内
に酸素ガス/窒素ガス比が40/60に調整された酸素
と窒素の混合ガスを導入して蒸着を行つた。その他の諸
条件については、実施例4と同じにした。<Embodiment 5> The inside of the bell jar is 1 × 10 to
After reducing the pressure to 6 (Torr) or less, a mixed gas of oxygen and nitrogen having an oxygen gas / nitrogen gas ratio adjusted to 40/60 was introduced into the bell jar to perform vapor deposition. Other conditions were the same as in Example 4.
【0025】〈実施例6〉ベルジャー内を1×10~
6(Torr)以下まで減圧した後、当該ベルジヤー内
に酸素ガス/窒素ガス比が60/40に調整された酸素
と窒素の混合ガスを導入して蒸着を行つた。その他の諸
条件については、実施例4と同じにした。<Embodiment 6> The inside of the bell jar is 1 × 10 to
After reducing the pressure to 6 (Torr) or less, a mixed gas of oxygen and nitrogen having an oxygen gas / nitrogen gas ratio adjusted to 60/40 was introduced into the bell jar to perform vapor deposition. Other conditions were the same as in Example 4.
【0026】〈実施例7〉ベルジャー内を1×10~
6(Torr)以下まで減圧した後、当該ベルジヤー内
に酸素ガス/窒素ガス比が80/20に調整された酸素
と窒素の混合ガスを導入して蒸着を行つた。その他の諸
条件については、実施例4と同じにした。<Embodiment 7> The inside of the bell jar is 1 × 10 to
After reducing the pressure to 6 (Torr) or less, a mixed gas of oxygen and nitrogen having an oxygen gas / nitrogen gas ratio adjusted to 80/20 was introduced into the bell jar to perform vapor deposition. Other conditions were the same as in Example 4.
【0027】〈実施例8〉ベルジャー内を1×10~
6(Torr)以下まで減圧した後、当該ベルジヤー内
に酸素ガス100%のガスを導入して蒸着を行つた。そ
の他の諸条件については、実施例4と同じにした。<Embodiment 8> 1 × 10 to the inside of the bell jar
After reducing the pressure to 6 (Torr) or less, 100% oxygen gas was introduced into the bell jar to perform vapor deposition. Other conditions were the same as in Example 4.
【0028】〈比較例2〉ベルジャー内を1×10~
6(Torr)以下まで減圧した後、当該ベルジヤー内
に窒素ガス100%のガスを導入して蒸着を行つた。そ
の他の諸条件については、実施例4と同じにした。<Comparative Example 2> 1 × 10 to the inside of the bell jar
After reducing the pressure to 6 (Torr) or less, 100% nitrogen gas was introduced into the bell jar to perform vapor deposition. Other conditions were the same as in Example 4.
【0029】図8に、情報が書き込まれた実施例4〜8
及び比較例2の光ディスクを気温が80℃、相対湿度が
50%の環境下に168時間放置した後の、情報ピツト
形成部における反射率の低下率を示す。このグラフ図か
ら明らかなように、酸素ガス/窒素ガス比が60/40
よりも低い場合には、耐食性の改善に顕著な効果が認め
られないが、酸素ガス/窒素ガス比をそれよりも高める
と、耐食性が改善されることが判った。なお、窒素に代
えてアルゴンやクリプトンなどの希ガスを酸素ガスに混
合しても、これと同じ結果が得られた。FIG. 8 shows Examples 4 to 8 in which information is written.
3 shows the reduction rate of the reflectance in the information pit forming section after the optical disk of Comparative Example 2 was left for 168 hours in an environment where the temperature was 80 ° C. and the relative humidity was 50%. As is apparent from this graph, the oxygen gas / nitrogen gas ratio is 60/40.
When it is lower than the above range, no significant effect is observed in improving the corrosion resistance, but it has been found that the corrosion resistance is improved when the oxygen gas / nitrogen gas ratio is increased more than that. The same result was obtained by mixing a rare gas such as argon or krypton with oxygen gas instead of nitrogen.
【0030】〈実施例9〉ベルジャー内を1×10~
6(Torr)以下まで減圧した後、当該ベルジヤー内
に気温が23℃、相対湿度が50%のクリーンルームエ
アを導入して蒸着を行つた。蒸着時の真空度は、8×1
0~6(Torr)とした。その他の諸条件については、
実施例1と同じにした。<Embodiment 9> The inside of the bell jar is 1 × 10 to
After reducing the pressure to 6 (Torr) or less, clean room air having an air temperature of 23 ° C. and a relative humidity of 50% was introduced into the bell jar to perform vapor deposition. Degree of vacuum during vapor deposition is 8 × 1
It was set to 0 to 6 (Torr). For other conditions,
Same as Example 1.
【0031】実施例9の光ディスクを気温が80℃、相
対湿度が50%の環境下に168時間放置した後、情報
ピツト形成部における反射率の低下率を測定したとこ
ろ、実施例1の場合とほぼ同様の良好な結果が得られ
た。これは、クリーンルームエアが水分を含んでいるた
めに、この水分中の酸素が記録膜結晶粒の酸化に関与し
たためと推定される。After the optical disk of Example 9 was left in an environment of an air temperature of 80 ° C. and a relative humidity of 50% for 168 hours, the decrease rate of reflectance in the information pit forming section was measured. Almost the same good results were obtained. It is presumed that this is because the clean room air contains water and the oxygen in the water contributed to the oxidation of the recording film crystal grains.
【0032】[0032]
【発明の効果】以上説明したように、本発明によると、
記録膜を構成する結晶粒をその記録膜材料の酸化物で覆
ったので、結晶粒の界面が不動態化され、結晶粒内部の
耐食性が改善される。したがって、記録膜の外面側ある
いは基板側などいずれの方向から水分が侵入したとして
も高い耐食性を発揮することができ、記録ピット形成後
の下地膜側からの腐食の問題、及びプラスチック基板を
用いた場合の透明基板側からの腐食の問題を解決でき
る。また、情報記録によって記録膜の一部にピットが形
成された場合にも、ピット周囲の結晶粒が不動態化膜で
ある強制酸化層にて覆われているので、耐食性が劣化し
ないという効果がある。As described above, according to the present invention,
Since the crystal grains constituting the recording film are covered with the oxide of the recording film material, the interface of the crystal grains is passivated and the corrosion resistance inside the crystal grains is improved. Therefore, high corrosion resistance can be exhibited even if moisture enters from any direction such as the outer surface side or the substrate side of the recording film, the problem of corrosion from the underlying film side after forming the recording pit, and the use of the plastic substrate. In this case, the problem of corrosion from the transparent substrate side can be solved. Further, even when pits are formed in a part of the recording film due to information recording, the crystal grains around the pits are covered with the forced oxidation layer which is the passivation film, so that the corrosion resistance does not deteriorate. is there.
【図1】本発明に係る光デイスクの第1例を示す断面図
である。FIG. 1 is a sectional view showing a first example of an optical disk according to the present invention.
【図2】本発明に係る光デイスクの第2例を示す断面図
である。FIG. 2 is a sectional view showing a second example of the optical disc according to the present invention.
【図3】本発明に係る光デイスクの第3例を示す断面図
である。FIG. 3 is a sectional view showing a third example of an optical disk according to the present invention.
【図4】本発明に係る記録膜の組織を模型的に示す説明
図である。FIG. 4 is an explanatory diagram schematically showing the structure of a recording film according to the present invention.
【図5】本発明に係る記録膜の組織を模型的に示す説明
図である。FIG. 5 is an explanatory diagram schematically showing the structure of the recording film according to the present invention.
【図6】本発明に係る記録膜の組織を模型的に示す説明
図である。FIG. 6 is an explanatory diagram schematically showing the structure of a recording film according to the present invention.
【図7】酸素ガス圧力と反射率低下量の関係を示す特性
図である。FIG. 7 is a characteristic diagram showing a relationship between oxygen gas pressure and reflectance decrease amount.
【図8】酸素濃度と反射率低下量との関係を示す特性図
である。FIG. 8 is a characteristic diagram showing the relationship between oxygen concentration and reflectance decrease amount.
【図9】強制酸化層に含まれる酸化物を例示する表図で
ある。FIG. 9 is a table showing an example of oxides contained in a forced oxidation layer.
1 透明基板 2 ガラス板 3 UV樹脂層 4 下地層 5 記録膜 7,9 エンハンス膜 8 光磁気記録膜 10 金属反射膜 11 結晶粒 12 強制酸化層 1 Transparent Substrate 2 Glass Plate 3 UV Resin Layer 4 Underlayer 5 Recording Film 7, 9 Enhance Film 8 Magneto-Optical Recording Film 10 Metal Reflective Film 11 Crystal Grain 12 Forced Oxidation Layer
───────────────────────────────────────────────────── フロントページの続き (72)発明者 太田 憲雄 大阪府茨木市丑寅一丁目1番88号 日立マ クセル株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Norio Ohta 1-88, Tora-Tora, Ibaraki City, Osaka Prefecture Hitachi Maxell Co., Ltd.
Claims (6)
て記録膜が形成された光ディスクにおいて、前記記録膜
を、結晶粒界がその記録膜材料の酸化物で覆われた結晶
粒の積層体にて形成したことを特徴とする光ディスク。1. An optical disc having a recording film formed on one surface of a transparent substrate directly or via another film, wherein the recording film is formed of crystal grains whose crystal grain boundaries are covered with an oxide of the recording film material. An optical disc formed by a laminated body.
明基板側の界面に、強制酸化層を形成したことを特徴と
する光ディスク。2. The optical disc according to claim 1, wherein a forced oxidation layer is formed on an interface of the recording film on the transparent substrate side.
ル又はテルルを主成分とする合金にて形成されているこ
とを特徴とする光ディスク。3. The optical disc according to claim 1, wherein the recording film is made of tellurium or an alloy containing tellurium as a main component.
て記録膜を真空成膜する光ディスクの製造方法におい
て、前記記録膜の真空成膜時、有酸素の真空雰囲気中で
記録膜材料を粒子化して当該粒子の表面を選択的に酸化
し、この表面が酸化された粒子を前記透明基板上又は他
の膜上に所定の膜厚まで積層することを特徴とする光デ
ィスクの製造方法。4. A method of manufacturing an optical disc in which a recording film is vacuum-deposited on one surface of a transparent substrate directly or via another film, and the recording film material is formed in a vacuum atmosphere of oxygen during the vacuum deposition of the recording film. A method for manufacturing an optical disc, comprising: forming particles into particles and selectively oxidizing the surfaces of the particles, and laminating the particles whose surfaces are oxidized to a predetermined film thickness on the transparent substrate or another film.
て記録膜を真空成膜する光ディスクの製造方法におい
て、前記記録膜の真空成膜中又は真空成膜後に当該記録
膜に強制酸化処理を施し、前記透明基板側の界面に強制
酸化層を形成することを特徴とする光ディスクの製造方
法。5. A method of manufacturing an optical disc in which a recording film is vacuum-deposited on one surface of a transparent substrate directly or via another film, and forced oxidation is performed on the recording film during or after the vacuum deposition of the recording film. A method for manufacturing an optical disk, which comprises performing a treatment to form a forced oxidation layer on the interface on the transparent substrate side.
化処理が、紫外線照射又は加熱、もしくは加熱下での紫
外線照射であることを特徴とする光ディスクの製造方
法。6. The method for manufacturing an optical disc according to claim 5, wherein the forced oxidation treatment of the recording film is ultraviolet irradiation, heating, or ultraviolet irradiation under heating.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4330540A JPH06180858A (en) | 1992-12-10 | 1992-12-10 | Optical disk and its production |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4330540A JPH06180858A (en) | 1992-12-10 | 1992-12-10 | Optical disk and its production |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH06180858A true JPH06180858A (en) | 1994-06-28 |
Family
ID=18233782
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4330540A Pending JPH06180858A (en) | 1992-12-10 | 1992-12-10 | Optical disk and its production |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH06180858A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2716574A1 (en) * | 1994-02-22 | 1995-08-25 | Bosch Gmbh Robert | Integrated component. |
-
1992
- 1992-12-10 JP JP4330540A patent/JPH06180858A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2716574A1 (en) * | 1994-02-22 | 1995-08-25 | Bosch Gmbh Robert | Integrated component. |
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