JPH0580651B2 - - Google Patents
Info
- Publication number
- JPH0580651B2 JPH0580651B2 JP60025834A JP2583485A JPH0580651B2 JP H0580651 B2 JPH0580651 B2 JP H0580651B2 JP 60025834 A JP60025834 A JP 60025834A JP 2583485 A JP2583485 A JP 2583485A JP H0580651 B2 JPH0580651 B2 JP H0580651B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode
- thin film
- liquid crystal
- sinx
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010408 film Substances 0.000 claims description 65
- 239000010409 thin film Substances 0.000 claims description 28
- 229910004205 SiNX Inorganic materials 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 13
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 11
- 239000011521 glass Substances 0.000 claims description 11
- 239000010410 layer Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- 239000011159 matrix material Substances 0.000 claims description 8
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 239000011241 protective layer Substances 0.000 claims description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 25
- 239000003990 capacitor Substances 0.000 description 22
- 239000000463 material Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
【発明の詳細な説明】
＜産業上の利用分野＞
本発明は表示装置特に大容量表示用液晶表示装
置の表示駆動用素子等として利用される薄膜素子
の製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a method of manufacturing a thin film element used as a display driving element of a display device, particularly a liquid crystal display device for large capacity display.
＜発明の背景＞
大容量の情報を正確にかつ任意のパターンで表
示する手段として、マトリツクス状に配列された
絵素を選択してマトリツク表示を実行する液晶表
示装置が知られているが、このような液晶表示装
置において高い表示コントラスト特性を有し大容
量表示を行うために有効な駆動方式としては、各
絵素にスイツチング素子として動作する薄膜トラ
ンジスタ（TFT）と電荷保持用の薄膜コンデン
サを付加したいわゆるアクテイブマトリツクス駆
動方式が知られている（たとえば、T.P.Broody
etal，IEEE Trans.Electron Devices，ED−20，
（1973）995）。以下、第２図を参照しながら、表
示絵素の各々にTFT及び薄膜コンデンサを付加
したマトリツク型液晶表示装置について説明す
る。尚、第２図はこの液晶表示装置の１絵素分の
等価回路を表わす回路図である。この液晶表示装
置の動作原理は、次の如くである。まずTFTの
ソース電極２５に表示内容に応じた信号電圧を印
加する。この時、選択すべき絵素電極２０１に対
応するTFTのゲート電極２７に走査ライン数に
応じた書き込み時間だけTFTがオン状態となる
スイツチング電圧を印加すると、ソース電極２５
からドレイン電極２６を介して絵素電極２０１へ
流れ込む電荷が薄膜コンデンサ２０２にｔ蓄積さ
れる。次にスイツチング電圧を解除してTFTを
オフ状態にすると、薄膜コンデンサ２０２の蓄積
電荷が解放されて薄膜コンデンサ２０２に並列接
続された絵素電極２０１に書き込み時間に比べ非
常に長い期間十分な電圧を印加することとなる。
従つて、選択された絵素電極２０１に位置する液
晶の電圧印加駆間が長くなり、良好な表示コント
ラストを保持しながら、同時にデユーテイ比の大
きなマルチプレツクス駆動を行なうことが可能と
なる。<Background of the Invention> As a means of displaying a large amount of information accurately and in an arbitrary pattern, a liquid crystal display device that performs matrix display by selecting picture elements arranged in a matrix is known. An effective driving method for achieving high display contrast characteristics and large-capacity display in liquid crystal display devices is to add a thin film transistor (TFT) that acts as a switching element to each picture element and a thin film capacitor for charge retention. So-called active matrix drive systems are known (for example, TPBroody
etal, IEEE Trans.Electron Devices, ED−20,
(1973) 995). Hereinafter, with reference to FIG. 2, a matrix type liquid crystal display device in which a TFT and a thin film capacitor are added to each display picture element will be explained. Incidentally, FIG. 2 is a circuit diagram showing an equivalent circuit for one picture element of this liquid crystal display device. The operating principle of this liquid crystal display device is as follows. First, a signal voltage corresponding to the display content is applied to the source electrode 25 of the TFT. At this time, if a switching voltage is applied to the gate electrode 27 of the TFT corresponding to the picture element electrode 201 to be selected to turn on the TFT for a write time corresponding to the number of scanning lines, the source electrode 25
Charges flowing from the pixel electrode 201 to the picture element electrode 201 via the drain electrode 26 are accumulated in the thin film capacitor 202. Next, when the switching voltage is released and the TFT is turned off, the accumulated charge in the thin film capacitor 202 is released, and a sufficient voltage is applied to the pixel electrode 201 connected in parallel to the thin film capacitor 202 for a much longer period than the writing time. It will be applied.
Therefore, the voltage application period for the liquid crystal located at the selected picture element electrode 201 becomes longer, and it becomes possible to perform multiplex driving with a large duty ratio while maintaining good display contrast.
このような薄膜コンデンサは、１絵素分の限ら
れたスペース内に形成されかつ液晶に比べて十分
に大きな電気容量を有することが必要となるた
め、その形成方法及び材料が限定されることにな
る。特に薄膜コンデンサを構成する誘電体膜は、
ピンホールフリーという観点からCVD法による
SiO2膜が使用されていた。また、電極材料は透
明導電膜を用いることにより、１絵素分の面積を
有効に使用している。 Such thin film capacitors are formed within the limited space of one picture element and must have a sufficiently large capacitance compared to liquid crystals, so the methods and materials for forming them are limited. Become. In particular, the dielectric film that makes up the thin film capacitor is
CVD method from the viewpoint of pinhole free
A SiO2 membrane was used. Furthermore, by using a transparent conductive film as the electrode material, the area of one picture element is effectively used.
上記薄膜コンデンサの誘電体膜の材料及び形成
方法として要求される条件としては、
(1) 誘電率が大きいこと
(2) ピンホールフリーであること
(3) 透明電極の光透過率を低下させないものであ
ること。 The conditions required for the material and formation method of the dielectric film of the above thin film capacitor are: (1) It must have a large dielectric constant, (2) It must be pinhole-free, and (3) It must not reduce the light transmittance of the transparent electrode. To be.
(4) 安価なガラス基板を使用できるような低温プ
ロセスであること。(4) A low-temperature process that allows the use of inexpensive glass substrates.
といつた制限が課せられる。Such restrictions are imposed.
本発明は、上記薄膜コンデンサの誘電体膜とし
てSiNx（ε＝6.4）とSiO2（ε＝3.5）の積層膜を
使用して実効的誘電率をSiO2単独の場合より増
加させると共に、その形成法としてプラズマ
CVD法を用いるため、上記(2)(3)(4)の条件にも合
致した誘電体膜を得ることができるものである。
特に(3)については、SiO2−Si3N4の順で積層する
ことにより、透明導電膜の還元反応による光透過
率の低下を防止している。 The present invention uses a laminated film of SiNx (ε = 6.4) and SiO 2 (ε = 3.5) as the dielectric film of the thin film capacitor to increase the effective dielectric constant compared to the case of SiO 2 alone, and to improve its formation. plasma as a method
Since the CVD method is used, a dielectric film that also meets the conditions (2), (3), and (4) above can be obtained.
In particular, regarding (3), the reduction in light transmittance due to the reduction reaction of the transparent conductive film is prevented by stacking the layers in the order of SiO 2 -Si 3 N 4 .
＜実施例＞
以下、第１図を参照しながら、本発明の１実施
例について説明する。<Example> Hereinafter, one example of the present invention will be described with reference to FIG.
第１図は本発明を液晶表示装置に適した場合の
１実施例を示す構造模式断面図である。このよう
な液晶表示装置は、一方のガラス基板１０に薄膜
コンデンサ表示電極及びTFTを形成した後、他
のガラス基板２０と貼り合わせ、液晶を封入して
製作される。本実施例では特に薄膜コンデンサに
関して詳細に説明する。 FIG. 1 is a schematic cross-sectional view of a structure showing one embodiment in which the present invention is applied to a liquid crystal display device. Such a liquid crystal display device is manufactured by forming a thin film capacitor display electrode and a TFT on one glass substrate 10, then bonding it to another glass substrate 20, and filling it with liquid crystal. In this embodiment, a thin film capacitor will be particularly explained in detail.
ガラス基板１０上に透明導電膜１１を真空蒸着
法にて1000Å程度の厚さに形成した後、フオトエ
ツチング法にてマトリツクス表示に適合した電極
パターンを形成する。次に、プラズマCVD法で
SiO2膜１２を厚さ500Å、連続してSiNx膜１３
を厚さ3000Å程度で同じくプラズマCVD法にて
重畳形成する。ここでSiO2膜１２は、
SiH420sccm、N2O200sccm、0.4torr、0.1W／cm2
基板温度300℃、一方SiNx膜１３は、
SiH420sccm、NH3180sccm、0.3tow、0.3W／
cm2、基板温度300℃の条件にて成膜し、２層構造
の誘電体膜とする。この場合、誘電体膜は、
SiNx膜１３のような高い誘電率を具備する材料
を用いることが薄膜コンデンサの容量を増す上で
有利である。しかしながら、ITO（In2O3・SnO2）
の様な透明導電膜１１上に直接SiNx膜１３を成
膜した場合、透明導電膜１１の透過率が著しく低
下すると共に、SiNx膜１３の絶縁性も劣化する
といつた現象が発生する。これは、SiNx膜１３
の成膜時におけるSiH4・NH3プラズマの還元性
雰囲気にさらされるため透明導電膜１１が変質す
ることに起因している。従つて上述した如く本実
施例ではSiNx膜１３の成膜前にSiO2膜１２を透
明導電膜１１の保護層として、約100Å〜1000Å
の厚さで薄く成膜した。これにより、SiNx膜１
３の高誘電特性を損なうことなく、かつ透明導電
膜１１の特性にも変化を与えることなく良質の誘
電体薄膜を成膜することができる。 A transparent conductive film 11 is formed on a glass substrate 10 to a thickness of about 1000 Å by vacuum evaporation, and then an electrode pattern suitable for matrix display is formed by photoetching. Next, using plasma CVD method
SiO 2 film 12 is 500 Å thick and SiNx film 13 is continuously formed.
3000 Å thick using the same plasma CVD method. Here, the SiO 2 film 12 is
SiH 4 20sccm, N 2 O200sccm, 0.4torr, 0.1W/cm 2
The substrate temperature is 300℃, while the SiNx film 13 is
SiH 4 20sccm, NH 3 180sccm, 0.3tow, 0.3W/
The film was formed under the conditions of cm 2 and substrate temperature of 300°C to form a dielectric film with a two-layer structure. In this case, the dielectric film is
It is advantageous to use a material with a high dielectric constant, such as SiNx film 13, to increase the capacitance of the thin film capacitor. However, ITO (In 2 O 3 · SnO 2 )
When the SiNx film 13 is directly formed on a transparent conductive film 11 such as that shown in FIG. This is the SiNx film 13
This is because the transparent conductive film 11 deteriorates due to exposure to the reducing atmosphere of SiH 4 .NH 3 plasma during film formation. Therefore, as described above, in this embodiment, before forming the SiNx film 13, the SiO 2 film 12 is used as a protective layer for the transparent conductive film 11, and the thickness is approximately 100 Å to 1000 Å.
A thin film was formed with a thickness of . As a result, SiNx film 1
A high-quality dielectric thin film can be formed without impairing the high dielectric properties of No. 3 and without changing the characteristics of the transparent conductive film 11.
尚、SiNx膜１３の形成方法としては、SiH4・
NH3の熱分解法があるが、800℃以上の高温プロ
セスを必要とするため、ガラス基板１０を使用す
る液晶表示装置には、低温プロセスであるプラズ
マCVD法を適用することが望まれる。 Note that the method for forming the SiNx film 13 is SiH4 .
Although there is a NH 3 thermal decomposition method, it requires a high-temperature process of 800° C. or higher, so it is desirable to apply a plasma CVD method, which is a low-temperature process, to a liquid crystal display device using the glass substrate 10.
上記２層誘電体膜形成後、さらに真空蒸着法や
スパツタ法により、透明導電膜１４を積層し、パ
ターン化して、薄膜コンデンサの他方の電極兼表
示用絵素電極を形成する。以上の工程により薄膜
コンデンサが形成される。上記薄膜コンデンサに
並設してTFTが形成される。SiNx膜１３上に絵
素電極と近接してAl等から成るゲート電極１５
をパターン形成し、その表面にゲート絶縁膜１６
を被覆する。ゲート絶縁膜１６としては上記薄膜
コンデンサのSiO2膜とSiNx膜の２層膜を用いて
も良い。ゲート絶縁膜１６上にはTe、アモルフ
アスシリコン又はその他の材料から成る半導体層
１７を堆積する。半導体層１７には左右方向より
１対のAl等から成るソース電極１５とドレイン
電極１９を堆積してパターン成形し、ドレイン電
極１９の片端は絵素電極の透明導電膜１４と接触
させて絵素電極とTFTを接続する。液晶表示セ
ルを構成する他方のガラス基板２０には内面に上
記絵素電極に対向する対向電極を構成する透明導
電膜２１が形成され、両ガラス基板１０，２０で
構成されるセル内部には液晶２２が封入される。
液晶２２としてツイステツドネマテイツク型液晶
を用いた場合にはさらにラビング処理された液晶
分子の配向層が両ガラス基板１０，２０の液晶と
接する位置に設けられる。絵素電極は表示面全体
にわたつてガラス基板１０上にマトリツクス状に
正規配列され、これに対応してTFTもマトリツ
クス配置される。TFTのゲート電極１５とソー
ス電極１８は行列方向に共通連結されて外部駆動
回路に接続される。 After forming the two-layer dielectric film, a transparent conductive film 14 is further laminated by vacuum evaporation or sputtering and patterned to form the other electrode of the thin film capacitor and display pixel electrode. Through the above steps, a thin film capacitor is formed. A TFT is formed in parallel to the thin film capacitor. A gate electrode 15 made of Al or the like is placed on the SiNx film 13 in close proximity to the pixel electrode.
A gate insulating film 16 is formed on the surface of the gate insulating film 16.
Cover. As the gate insulating film 16, a two-layer film of the SiO 2 film and the SiNx film of the thin film capacitor described above may be used. A semiconductor layer 17 made of Te, amorphous silicon, or other material is deposited on the gate insulating film 16. A pair of source electrodes 15 and drain electrodes 19 made of Al or the like are deposited and patterned from left and right on the semiconductor layer 17, and one end of the drain electrodes 19 is brought into contact with the transparent conductive film 14 of the picture element electrode to form a picture element. Connect the electrode and TFT. On the inner surface of the other glass substrate 20 constituting the liquid crystal display cell, a transparent conductive film 21 constituting a counter electrode facing the picture element electrode is formed. 22 is enclosed.
When a twisted nematic type liquid crystal is used as the liquid crystal 22, a rubbing-treated alignment layer of liquid crystal molecules is further provided at a position on both glass substrates 10, 20 in contact with the liquid crystal. The picture element electrodes are regularly arranged in a matrix on the glass substrate 10 over the entire display surface, and the TFTs are also arranged in a matrix correspondingly. The gate electrode 15 and source electrode 18 of the TFT are commonly connected in the row and column direction and connected to an external driving circuit.
ソース電極１８に信号電圧を印加し、ゲート電
極１５にスイツチング電圧を印加してTFTを選
択的にオンオフ動作させ、表示情報に対応してソ
ース電極１９より絵素電極に電圧印加し、絵素電
極と対向電極との間で印加される電界によつて液
晶の電気光学的効果に基く表示パターンを生起す
る。この時、絵素電極と下層の透明導電膜１１と
の間で形成される薄膜コンデンサにも電荷が蓄積
され、この電荷がTFTのオフ時に解放されるた
め、TFTのオフ動作後も絵素電極と対向電極間
に薄膜コンデンサの時定数に応じて一定期間電界
が印加されることとなり、液晶はTFTオン時の
電気光学効果を持続する。従つてデユーテイ比の
高い表示駆動が行なわれる。薄膜コンデンサの中
に介挿される誘電体膜は誘電率の高いSiNx膜１
３で構成されているため電荷の蓄積効率が高く、
液晶に電圧印加する期間が非常に長くなり、鮮明
な画像が得られる。 A signal voltage is applied to the source electrode 18, a switching voltage is applied to the gate electrode 15 to selectively turn on and off the TFT, and a voltage is applied from the source electrode 19 to the pixel electrode in accordance with display information. A display pattern based on the electro-optical effect of the liquid crystal is generated by an electric field applied between the liquid crystal and the counter electrode. At this time, charge is also accumulated in the thin film capacitor formed between the picture element electrode and the lower transparent conductive film 11, and this charge is released when the TFT is turned off, so even after the TFT is turned off, the picture element electrode An electric field is applied between the electrode and the opposing electrode for a certain period of time according to the time constant of the thin film capacitor, and the liquid crystal maintains the electro-optic effect when the TFT is on. Therefore, display driving with a high duty ratio is performed. The dielectric film inserted into the thin film capacitor is a SiNx film 1 with a high dielectric constant.
3, the charge storage efficiency is high,
The period during which voltage is applied to the liquid crystal becomes extremely long, resulting in a clear image.
＜発明の効果＞
以上詳説した如く液晶表示装置等の大容量性表
示装置に使用する薄膜コンデンサは、誘電体膜を
透明導電膜でサンドイツチ状に挾設するという特
殊な構造であるため、誘電体膜形成時に透明電極
への影響を考慮しなければならないが、本発明
は、このような条件下でコンデンサの一方の電極
となる透明導電膜上にSiNxの誘電体膜をプラズ
マCVD法で成膜する際に、透明導電膜をSiO2膜
で被覆し、このSiO2膜を下地膜としてこの上に
SiNx膜を重畳した２層誘電体膜構造とすること
によつて透明導電膜に悪影響を与えることなく高
誘電率を有する優れた特性の誘電体膜を形成する
ことができ、TFT等のスイツチング素子と連結
して表示装置の駆動用薄膜コンデンサに利用した
場合に多大な効果を奏するものである。<Effects of the Invention> As explained in detail above, thin film capacitors used in large-capacity display devices such as liquid crystal displays have a special structure in which a dielectric film is sandwiched between transparent conductive films in a sandwich-like structure. Although the influence on the transparent electrode must be taken into consideration when forming the film, the present invention is capable of forming a dielectric film of SiNx by plasma CVD on the transparent conductive film that will become one electrode of the capacitor under such conditions. When doing so, the transparent conductive film is coated with a SiO 2 film, and this SiO 2 film is used as a base film on top of it.
By using a two-layer dielectric film structure in which SiNx films are superimposed, it is possible to form a dielectric film with excellent properties and a high dielectric constant without adversely affecting the transparent conductive film, which is useful for switching devices such as TFTs. When used in conjunction with a thin film capacitor for driving a display device, great effects can be achieved.
第１図は本発明の１実施例を説明する液晶表示
装置の模式断面図である。第２図は従来の液晶表
示装置の１絵素分の等価回路を表わす回路図であ
る。
１０，２０……ガラス基板、１１，１４……透
明導電膜、１２……SiO2膜、１３……SiNx膜、
１５……ゲート電極、１６……ゲート絶縁膜、１
７……半導体層、１８……ソース電極、１９……
ドレイン電極、２１……対向電極、２２……液
晶。
FIG. 1 is a schematic cross-sectional view of a liquid crystal display device explaining one embodiment of the present invention. FIG. 2 is a circuit diagram showing an equivalent circuit for one picture element of a conventional liquid crystal display device. 10, 20... Glass substrate, 11, 14... Transparent conductive film, 12... SiO 2 film, 13... SiNx film,
15... Gate electrode, 16... Gate insulating film, 1
7... Semiconductor layer, 18... Source electrode, 19...
Drain electrode, 21... Counter electrode, 22... Liquid crystal.
Claims (1)
を形成し、 上記ITO電極を形成したガラス基板上にITO保
護層としてSiO2膜をプラズマCVD法により堆積
するとともに、該SiO2膜を下地膜としてプラズ
マCVD法でSiNx膜を重畳して２層誘電体膜を形
成し、 上記２層誘電体膜上にITOよりなる他方の透明
電極を形成するとともに、該透明電極を表示に対
する絵素電極としてアクテイブマトリツクス駆動
用薄膜トランジスタに連結したことを特徴とする
薄膜素子の製造方法。[Claims] 1. One transparent electrode made of ITO is formed on a glass substrate, and an SiO 2 film is deposited as an ITO protective layer by plasma CVD on the glass substrate on which the ITO electrode is formed, and the SiO A two- layer dielectric film is formed by superimposing a SiNx film using the two films as a base film using a plasma CVD method, and the other transparent electrode made of ITO is formed on the two-layer dielectric film, and the transparent electrode is displayed. 1. A method for manufacturing a thin film element, characterized in that the thin film element is connected to a thin film transistor for driving an active matrix as a picture element electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60025834A JPS61184517A (en) | 1985-02-12 | 1985-02-12 | Thin film element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60025834A JPS61184517A (en) | 1985-02-12 | 1985-02-12 | Thin film element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61184517A JPS61184517A (en) | 1986-08-18 |
| JPH0580651B2 true JPH0580651B2 (en) | 1993-11-09 |
Family
ID=12176885
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60025834A Granted JPS61184517A (en) | 1985-02-12 | 1985-02-12 | Thin film element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61184517A (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63148239A (en) * | 1986-12-12 | 1988-06-21 | Nec Corp | Active matrix type liquid crystal display device |
| JP2620240B2 (en) * | 1987-06-10 | 1997-06-11 | 株式会社日立製作所 | Liquid crystal display |
| JP2617950B2 (en) * | 1987-10-16 | 1997-06-11 | 松下電器産業株式会社 | Manufacturing method of liquid crystal display device |
| JPH02108029A (en) * | 1988-10-17 | 1990-04-19 | Sharp Corp | Active matrix substrate |
| JP2711015B2 (en) * | 1990-07-25 | 1998-02-10 | 三菱電機株式会社 | Matrix type display device |
| JPH04128823A (en) * | 1990-09-20 | 1992-04-30 | Hitachi Ltd | Active matrix substrate |
| US5402254B1 (en) * | 1990-10-17 | 1998-09-22 | Hitachi Ltd | Liquid crystal display device with tfts in which pixel electrodes are formed in the same plane as the gate electrodes with anodized oxide films before the deposition of silicon |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58125087A (en) * | 1982-01-21 | 1983-07-25 | 社団法人日本電子工業振興協会 | Matrix type liquid crystal display |
| JPS6097385A (en) * | 1983-11-01 | 1985-05-31 | セイコーインスツルメンツ株式会社 | Thin film transistor substrate for liquid crystal display |
-
1985
- 1985-02-12 JP JP60025834A patent/JPS61184517A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58125087A (en) * | 1982-01-21 | 1983-07-25 | 社団法人日本電子工業振興協会 | Matrix type liquid crystal display |
| JPS6097385A (en) * | 1983-11-01 | 1985-05-31 | セイコーインスツルメンツ株式会社 | Thin film transistor substrate for liquid crystal display |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61184517A (en) | 1986-08-18 |
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