JPH0575087A - Image sensor - Google Patents

Abstract

PURPOSE:To suppress the variation of the sensitivity of a photodetector and avoid the dielectric breakdown of the photodetector caused by static charge accumulated while substrates are handled. CONSTITUTION:A filter substrate 5 is bonded to the one surface of a sensor substrate 2 on which a photodetector 4 is formed with a transparent adhesive layer 8 and a drive circuit substrate 9 is bonded to the other surface with an adhesive layer 10 to constitute an image sensor 20. A reflection-proof film 21 is formed on the surface of the transparent substrate 3 of the sensor substrate 2 opposite to the surface on which the photodetector 4 is formed. The reflection- proof film 21 is made of material which has a function preventing the reflection of a light and, further, has an electrical conductivity not larger than 1X10<12>OMEGA.cm.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an image sensor used for reading an image in a digital copying machine, a facsimile or the like.

[0002]

2. Description of the Related Art Conventionally, a contact type CCD line sensor has been generally used as an image sensor for reading an image of an original in a digital copying machine, a facsimile or the like.
There is a problem that more than normal signal charges are generated by extra light incident from the side surface, resulting in variation in sensitivity of the light receiving element, and as a means for improving it, for example, Japanese Patent Laid-Open No. 2212667/1990. Has been proposed to provide a light shielding film on the vertical cross section of the edge of the image sensor.

However, since the dimension of the CCD line sensor is determined by the diameter of the wafer, it is inevitably short. On the other hand, when the contact type image sensor is constituted by the CCD line sensor, the short CCD line sensor is used. Since it is necessary to combine a plurality of zigzag patterns into a long image sensor, not only is the manufacturing cumbersome, but each CC
Variations in the characteristics of the D line sensor have also been a problem.
The above is a description of the black and white image sensor,
This discussion also applies to color image sensors.

On the other hand, in recent years, an image sensor has been proposed in which a plurality of optical semiconductor elements such as photodiodes and phototransistors as light receiving elements are formed in a line or two-dimensional matrix on a transparent substrate such as a glass substrate. However, according to this, an image sensor having a desired size can be easily obtained only by a series of manufacturing steps for forming an optical semiconductor element, and further, variations in characteristics of each optical semiconductor element can be suppressed.

A color filter substrate (hereinafter simply referred to as a filter substrate) having a color filter formed on a transparent substrate such as a glass substrate is added to an image sensor substrate (hereinafter simply referred to as a sensor substrate) having such an image sensor formed thereon. A color image sensor can be easily configured by stacking the above).

An example of the structure is shown in FIG. In FIG. 14A, the light receiving element formed of the optical semiconductor element is arranged in the main scanning (FS) direction 3
FIG. 14B is a schematic plan view of a color image sensor arranged in rows, and FIG. 14B is a schematic cross-sectional view taken along the line AA ′ of FIG. 14A.
In FIG. 14A, the image sensor 1 is 3 in the FS direction.
The light receiving elements 4 arranged in rows and the color filters 7, 11 and 12 formed on the respective light receiving element rows are provided. The color filters 7, 11, and 12 are, for example, a red transmission filter, a green transmission filter, and a blue transmission filter, respectively. This image sensor 1, as shown in FIG. 14B,
A sensor substrate 2 having a light receiving element 4 made of a semiconductor element formed on a transparent substrate 3 such as a glass substrate, and a filter substrate 5 having color filters 7, 11 and 12 formed on a transparent substrate 6 such as a glass substrate. It is configured by bonding with a transparent adhesive layer 8. A drive circuit board 9 on which a circuit for driving the light receiving element 4 is mounted is provided on the surface of the sensor board 2 opposite to the side on which the filter board 5 is bonded.
Are bonded by the adhesive layer 10. Note that FIG.
Although not shown in A and B, it goes without saying that the sensor substrate 2 is provided with a wiring pattern for connecting each light receiving element 4 and the drive circuit substrate 9.

[0007]

However, in the image sensor shown in FIG. 14, as shown in FIG.
After the light 15 incident from the outside through a gap formed between the adjacent light receiving element and its wiring is reflected on the bonding surface between the sensor substrate 2 and the drive circuit substrate 9, the filter substrate is again shown as 16 in the figure. 5 may be reflected on the surface of the light receiving element 5 or may be reflected by the adhesive surface between the sensor substrate 2 and the filter substrate 5 as shown by 17 in the figure, and may enter the light receiving element 4, which causes variations in the sensitivity of the light receiving element. There was a problem that. Further, as described above, the transparent substrate 3 of the sensor substrate 2 and the transparent substrate 6 of the filter substrate 5 are both glass substrates which are insulators. Therefore, when handling the sensor substrate 2 and the filter substrate 5, these transparent substrates are used. There is a problem that static electricity may be accumulated on the substrates 3 and 6, whereby the insulation between the sensor substrate 2 and the filter substrate 5 is destroyed, and as a result, the optical semiconductor element forming the light receiving element 4 is destroyed. Further, in such an image sensor, a driving system for carrying a document or a driving system for carrying an image sensor substrate is arranged at a distance of a few mm to a few tens of mm from the substrate to constitute a recording device such as a facsimile or a copying machine device. To be done. There is also a problem that electrical noise from such an environment is superimposed on the output of the image sensor.

The present invention has been made to solve the above-mentioned problems, and not only can prevent variations in the sensitivity of the light-receiving element, but also can prevent dielectric breakdown of the light-receiving element due to static electricity accumulated during handling of the substrate and prevent external noise. An object is to provide an image sensor that can be cut off.

[0009]

In order to achieve the above object, the image sensor of the present invention is, firstly, an image sensor having a light receiving element formed on one surface of a transparent substrate. A second feature is that an antireflection film is formed on the surface opposite to the surface on which the light receiving element is formed. Secondly, in an image sensor in which the light receiving element is formed on one surface of the transparent substrate, The third aspect is characterized in that an antireflection film is formed on the entire surface excluding the element or on the peripheral portion of the light receiving element. Thirdly, an image sensor substrate having the light receiving element formed on one surface of the transparent substrate and one surface of the transparent substrate. In an image sensor formed by laminating a color filter substrate having a color filter formed thereon, the entire surface of the image sensor substrate excluding the light receiving element or the peripheral portion of the light receiving element. An antireflection film is formed of an insulating material, and a transparent conductive film is formed on the surface of the color filter substrate opposite to the surface bonded to the image sensor substrate. Is an image sensor formed by bonding an image sensor substrate having a light receiving element formed on one surface of a transparent substrate and a color filter substrate having a color filter formed on one surface of a transparent substrate, wherein An antireflection film is formed on the entire surface of the surface of the color filter substrate opposite to the surface bonded to the image sensor substrate, excluding the area corresponding to the light receiving element, or the peripheral portion of the area corresponding to the light receiving element. Fifth, an image sensor substrate having a light receiving element formed on one surface of a transparent substrate and a cover having a color filter formed on one surface of the transparent substrate. In the image sensor according formed by bonding and the over filter substrate, characterized in that to form an antireflection film in a region other than the color filter portion of the surface where the color filter of the color filter substrate is formed.

[0010]

According to the present invention, in an image sensor using an image sensor substrate in which a light receiving element is formed on one surface of a transparent substrate, antireflection is performed on a portion where excess light may enter. Since the film is provided, variations in the sensitivity of the light receiving element can be prevented. Further, since the antireflection film has conductivity, even if static electricity is accumulated on the image sensor substrate or the color filter substrate during handling of the substrate, the static electricity can be guided to the outside through the antireflection film. Therefore, the dielectric breakdown of the light receiving element can be prevented.

[0011]

Embodiments will be described below with reference to the drawings.
In the following embodiments, the case where the present invention is applied to a color image sensor in which light receiving elements are arranged in three rows in the FS direction as in the case shown in FIG. 14 will be described. As a matter of course, the present invention can be applied to image sensors arranged in a matrix.
Also, the same or equivalent parts as those in FIG. 14 are designated by the same reference numerals.

The configuration of a first embodiment of the image sensor according to the present invention is shown in FIG. This cross-sectional view is a partial cross-sectional view along the FS direction of one light-receiving element array as in FIG. 14B. In the image sensor 20 shown in FIG. 1, the filter substrate 5 is attached to the surface of the sensor substrate 2 on which the light receiving element 4 is formed by a transparent adhesive layer 8 and the drive circuit substrate 9 is attached to the other surface, as in the conventional case. Of the transparent substrate 3 of the sensor substrate 2 on the surface opposite to the surface where the light receiving element 4 is formed.
Is different from the conventional configuration.

As a material for forming the antireflection film 21, as shown by 22 in FIG. 1, the reflection of light incident from the outside through a gap formed between the adjacent light receiving element and its wiring is prevented. And has a conductivity of 1 × 10
A material having conductivity of ¹² Ω · cm or less is used. As such a material, a metal material such as Cr, Si, Ti, ITO (indium tin oxide) or an organic material having conductivity can be used, but when a material having a light-transmitting property such as ITO is used. Is used in combination with an absorption dielectric that absorbs light. The antireflection film having conductivity is formed by using a conductive epoxy (not shown) or the like and being connected to a ground line or a constant potential line of the image sensor driving circuit.

With the above configuration, it is possible to prevent the light incident between the light receiving elements 4 and from the end surface of the light receiving element 4 from being reflected on the back surface of the sensor substrate 2, and thus the light reflected on the back surface of the sensor substrate 2 is again detected. The surface of the filter substrate 5 and the sensor substrate 2
Since it is possible to prevent the light from being reflected on the bonding surface between the filter substrate 5 and the filter substrate 5 and incident on the light receiving element 4, it is possible to suppress variations in the sensitivity of the light receiving element 4, and at the time of handling the substrate, the transparent substrate 3 of the sensor substrate 2 Even if static electricity is accumulated on the anti-reflection film 21 which has conductivity,
Since the light can be guided to the outside via the, the dielectric breakdown of the light receiving element 4 can be prevented. Further, since this antireflection film having conductivity is connected to a constant potential such as the ground line of the image sensor drive circuit, electrical noise from the outside of the image sensor is blocked, and as a result, noise to the output of the image sensor is cut off. Can be prevented from overlapping.

Next, a method of manufacturing the image sensor 20 shown in FIG. 1 will be described. FIG. 2 is a view showing a manufacturing process of the image sensor 20, which is a cross-sectional view taken along the sub-scanning (SS) direction. First, as shown in FIG. 2A, a known method for manufacturing an optical semiconductor device on a glass substrate 3 is described. To set the light-receiving element 4 to 3
Then, as shown in FIG. 3B, an antireflection film 21 is uniformly formed on the surface of the glass substrate 3 opposite to the surface on which the light receiving element 4 is formed.

The material of the antireflection film 21 has a function of preventing reflection of light and has a conductivity of 1 × 10 ¹² Ω · c.
Any material may be used as long as it is a material of m or less.
When using a metal material having both antireflection function and conductivity such as Cr, Si, or Ti, the antireflection film 21 is formed by depositing these metal materials on the glass substrate 3 by vapor deposition or sputtering. be able to. When a translucent metal material such as ITO is used, the metal material is deposited on the glass substrate 3 by a vapor deposition method or a sputtering method, and a color mosaic CK-2000 is further formed thereon.
The antireflection film 21 can be formed by depositing an absorbing dielectric material such as (manufactured by Fuji Hunt) by a method such as a casting method. Furthermore, the antireflection film 21 can also be formed by depositing an organic material such as murus (manufactured by Matsushita Electric Works, Ltd.) by a method such as a casting method. When the sensor substrate 2 is formed by forming the antireflection film 21 on the glass substrate 3 as described above, then, as shown in FIG. 2C, the sensor substrate 2 and the glass substrate 6 are subjected to a well-known dyeing method, dispersion method, electrodeposition method. And the filter substrate 5 on which the color filters 7, 11, and 12 are formed by a method such as a multi-layer interference film method or a multilayer interference film method. At this time, it goes without saying that the light receiving element 4 of the sensor substrate 2 and the color filters 7, 11, 12 of the filter substrate 5 face each other. As the transparent adhesive layer 8, an epoxy-based adhesive such as Arteco RX-7901-1 (manufactured by Alpha Giken) can be used. Next, as shown in FIG. 2D, it is cut into a predetermined substrate size, and finally, as shown in FIG.
Is bonded to the sensor substrate 2 with the adhesive layer 10. As the adhesive layer 10, a silicone resin such as SE-9140 (manufactured by Toray Dow Corning Silicone Co., Ltd.) can be used.

Next, the configuration of the second embodiment of the present invention is shown in FIG.
Shown in. This sectional view is a partial sectional view taken along the FS direction of one light receiving element row, as in FIG. In the image sensor 25 of FIG. 3, the filter substrate 5 is attached to the surface of the sensor substrate 2 on which the light receiving elements 4 are formed by the transparent adhesive layer 8 and the drive circuit substrate 9 is attached to the other surface, as in the conventional case. Although it is configured by bonding with the adhesive layer 10, the antireflection film 26 is formed on the entire surface of the sensor substrate 2 excluding the light receiving element 4 or on the peripheral portion of the light receiving element 4. This is different from the conventional configuration in that the light shielding film 27 is formed on the end surface and the side surface of the image sensor 25. This antireflection film 26
Can be formed by depositing a conductive material having a function of preventing light reflection such as Cr, Si, Ti, and Al on the entire surface excluding the light receiving element 4 or the peripheral portion of the light receiving element 4. In addition, first, an insulating material having a function of preventing light reflection is deposited on the entire surface except the light receiving element 4 or the peripheral portion of the light receiving element 4, and then a transparent conductive material is deposited on the insulating film. It can also be formed by FIG. 3 is a diagram showing the former configuration, in which the antireflection film 26 is formed.
Is formed of a conductive material having a function of preventing reflection of light. On the other hand, FIG. 4 is a diagram showing an example of the latter configuration, in which the antireflection film 26 is formed of an insulating layer 28 and a transparent conductive layer 29. Others are the same as those in FIG.

According to the above structure, it is possible to prevent excess light from entering between the light receiving elements 4 and the side surface and the end surface of the image sensor 25, and as shown at 30 in FIG. Since the light radiated on the will not be reflected,
Excessive light does not enter the light receiving element 4, so that variations in the sensitivity of the light receiving element 4 can be suppressed. In addition, the transparent substrate 3 of the sensor substrate 2 when handling the substrate
Even if static electricity is accumulated in the light receiving element 4, dielectric breakdown of the light receiving element 4 can be prevented because the static electricity can be guided to the outside through the antireflection film 26 having conductivity. Further, since this antireflection film is connected to the ground line of the image sensor drive circuit, it is possible to block unnecessary electric noise from the outside of the image sensor.

Next, a method of manufacturing the image sensor 25 shown in FIG. 3 will be described. FIG. 5 is a view showing a manufacturing process of the image sensor 25, which is a cross-sectional view taken along the sub-scanning (SS) direction. First, as shown in FIG. 5A, a known method for manufacturing an optical semiconductor element on the glass substrate 3 is described. To set the light-receiving element 4 to 3
A column is formed, and a conductive film 31 is further formed thereon. The conductive film 31 can be formed by depositing a conductive material having a light reflection preventing function such as Cr, Si, Ti, and Al by a vapor deposition method or a sputtering method. Next, at least the conductive film on the light receiving element 4 is removed by photolithography. Thus, as shown in FIG. 5B, the sensor substrate 2'having the antireflection film 26 made of a conductive material is formed. Next, as shown in FIG. 5C, the color filters 7, 11 are formed on the sensor substrate 2 ′ and the glass substrate 6 by a known dyeing method, a dispersion method, an electrodeposition method, a multilayer interference film method, or the like.
The filter substrate 5 on which 12 is formed is attached by the transparent adhesive layer 8. At this time, it goes without saying that the light receiving element 4 of the sensor substrate 2 and the color filters 7, 11, 12 of the filter substrate 5 face each other. As the transparent adhesive layer 8, an epoxy-based adhesive such as Arteco RX-7901-1 (manufactured by Alpha Giken) can be used.

Next, the sensor substrate 2'and the filter substrate 5 bonded together is cut into a predetermined substrate size, and as shown in FIG. 5D, the drive circuit substrate 9 is attached to the sensor substrate 2'by the adhesive layer 10. Then, the light shielding film 27 is finally formed on the end face and the side face. Silicon resin such as SE-9140 (manufactured by Toray Dow Corning Silicone Co., Ltd.) may be used as the adhesive layer 10, and the light-shielding layer 27 may be color mosaic CK-2000 (manufactured by Fuji Hunt) by spin coating or roll. It can be formed by applying by a coating method. Next, a method for manufacturing the image sensor shown in FIG. 4 will be described. FIG. 6 is a view showing a manufacturing process of the image sensor having the structure shown in FIG. 4, which is a cross-sectional view taken along the sub-scanning (SS) direction. First, as shown in FIG. Three rows of light receiving elements 4 are formed by using the method for manufacturing a semiconductor element, an insulating film 32 having a function of preventing light reflection is further formed thereon, and then a transparent conductive film 33 is formed on the insulating film 32. Is formed and fired. The insulating film 32 can be formed, for example, by applying a color mosaic CK-2000 (manufactured by Fuji Hunt) or the like on the entire surface by a spin coating method, a roll coating method, or the like, and the transparent conductive film 33 is made of In ₂ O _{3 or the like.} , SnO ₂ , ITO, Sb ₂ O
It can be formed by depositing ₃ , ZnO, TiO ₂ or the like by a vapor deposition method or a sputtering method.

Next, at least the insulating film and the transparent conductive film on the light receiving element 4 are removed by photolithography. Thus, as shown in FIG. 6C, the sensor substrate including the antireflection film 26 including the insulating layer 28 and the transparent conductive layer 29 is formed. Next, as shown in FIG. 6DC, the color filter 7 and the sensor substrate shown in FIG. 6C are formed on the glass substrate 6 by a known dyeing method, dispersion method, electrodeposition method, multilayer interference film method, or the like.
The transparent substrate 8 and the filter substrate 5 on which 11 and 12 are formed
Paste by. At this time, the light receiving element 4 of the sensor substrate 2
It goes without saying that the color filters 7, 11 and 12 of the filter substrate 5 face each other. As the transparent adhesive layer 8, an epoxy-based adhesive such as Arteco RX-7901-1 (manufactured by Alpha Giken) can be used.

Next, the sensor substrate shown in FIG. 6D and the filter substrate 5 which are bonded together are cut into a predetermined substrate size, and as shown in FIG. 6E, the drive circuit substrate 9 is bonded to the sensor substrate by the adhesive layer 10. 6F, and finally, as shown in FIG. 6F, the light shielding film 27 is formed on the end face and the side face. Silicone resin such as SE-9140 (manufactured by Toray Dow Corning Silicone Co., Ltd.) may be used as the adhesive layer 10, and the light shielding layer 27 may be color mosaic CK-2000 (manufactured by Fuji Hunt) by spin coating. Alternatively, it can be formed by applying by a roll coating method.

Next, the configuration of the third embodiment of the present invention is shown in FIG.
Shown in. This sectional view is a partial sectional view taken along the FS direction of one light receiving element row, as in FIG. In the image sensor of FIG. 7, the filter substrate 5 and the transparent adhesive layer 8 are provided on the surface of the sensor substrate 2 on which the light receiving elements 4 are formed, as in the conventional case.
And the drive circuit board 9 on the other surface by the adhesive layer 1
However, the antireflection film 35 made of an insulating material is formed on the entire surface of the sensor substrate 2 excluding the light receiving element 4 or the peripheral portion of the light receiving element 4 on the surface on which the light receiving element 4 is formed. Is formed, the transparent conductive film 36 is formed on the surface of the filter substrate 5 opposite to the surface bonded to the sensor substrate 2, and the light shielding film 27 is formed on the end surface and the side surface of the image sensor. It is different from the conventional configuration in that it is formed.

With this structure, it is possible to prevent extra light from entering between the light receiving elements 4 and from the side surface or the end surface of the image sensor, and the light applied to the antireflection film 35 can be reflected. Since no light is incident on the light receiving element 4, variations in sensitivity of the light receiving element 4 can be suppressed, and static electricity accumulates on the transparent substrate 6 of the filter substrate 5 during substrate handling. Even if this occurs, the static electricity can be guided to the outside through the transparent conductive film 36, so that dielectric breakdown of the light receiving element 4 can be prevented. Further, since this antireflection film is connected to the ground line of the image sensor drive circuit, it is possible to block unnecessary electric noise from the outside of the image sensor.

The image sensor shown in FIG. 7 can be manufactured as follows. First, similarly to the case shown in FIG. 6A, three rows of light receiving elements 4 are formed on the glass substrate 3 by using a known method for manufacturing an optical semiconductor element, and an insulating film having a function of preventing light reflection is further formed thereon. Form. This insulating film is, for example, Color Mosaic CK-2000 (manufactured by Fuji Hunt)
Etc. can be formed by coating the entire surface by spin coating or roll coating. Next, the sensor substrate provided with the antireflection film 35 made of an insulating material is created by removing at least the insulating film on the light receiving element 4 by photolithography.

On the glass substrate 6, a color filter 7, a well-known dyeing method, a dispersion method, an electrodeposition method, a multilayer interference film method or the like is used.
On the surface of the filter substrate 5 on which 11 and 12 are formed, the surface opposite to the surface on which the color filter is formed, In ₂ O ₃ , Sn
O ₂ , ITO, Sb ₂ O ₃ , ZnO, TiO ₂ or the like is deposited by a vapor deposition method or a sputtering method and then baked to form a filter substrate having the transparent conductive film 36. Next, the sensor substrate and the filter substrate produced as described above are attached by the transparent adhesive layer 8. At this time, the light receiving element 4 on the sensor substrate and the color filters 7, 11,
It is natural that 12 and 12 are opposed to each other. The transparent adhesive layer 8 may be an epoxy adhesive such as Arteco RX-7901-
1 (manufactured by Alpha Giken) or the like can be used.

Next, the bonded sensor substrate and filter substrate are cut into a predetermined substrate size, and the drive circuit substrate 9 is bonded to the other surface of the sensor substrate by the adhesive layer 10, and finally the end surface and The light shielding film 27 is formed on the side surface. As the adhesive layer 10, a silicone resin such as SE-91 is used.
40 (manufactured by Toray Dow Corning Silicone Co., Ltd.) or the like can be used, and the light shielding layer 27 is, for example, a color mosaic C.
It can be formed by applying K-2000 (manufactured by Fuji Hunt) by spin coating or roll coating.

Next, the configuration of the fourth embodiment of the present invention is shown in FIG.
Shown in. Similar to FIG. 1, this sectional view is a partial sectional view along the FS direction of one light receiving element array. In the image sensor shown in FIG. 8, the filter substrate 5 is attached to the surface of the sensor substrate 2 on which the light receiving element 4 is formed by the transparent adhesive layer 8 and the drive circuit substrate 9 is attached to the other surface, as in the conventional case. The layer 10 is formed by bonding the layers, but the entire surface of the filter substrate 5 opposite to the surface bonded to the sensor substrate 2 except the area corresponding to the light receiving element 4 or the area corresponding to the light receiving element 4. Anti-reflection film 40 on the periphery of the
Is formed and the light shielding film 27 is formed on the end surface and the side surface of the image sensor, which is different from the conventional configuration. This antireflection film 40 is made of Cr, Si, Ti, A
A conductive material having a function of preventing reflection of light such as l is formed on the entire surface except the region corresponding to the light receiving element 4 or the light receiving element 4
It can also be formed by depositing a film on the peripheral portion of the region corresponding to, and first, the reflection of light is prevented on the entire surface except the region corresponding to the light receiving element 4 or the peripheral portion of the region corresponding to the light receiving element 4. It is also possible to form a film by depositing an insulating material having the function of, and then depositing a transparent conductive material on the insulating film. FIG. 8 is a diagram showing the former configuration, in which the antireflection film 40 is formed of a conductive material having a function of preventing reflection of light. On the other hand, FIG. 9 is a diagram showing an example of the latter configuration, in which the antireflection film 40 is used.
Is formed of a light shielding portion 41 made of an insulating layer and a transparent conductive film 42. Others are the same as those in FIG.

According to this structure, it is possible to prevent excess light from entering the light receiving element 4, so that variations in the sensitivity of the light receiving element 4 can be suppressed. Further, even if static electricity is accumulated on the transparent substrate 6 of the filter substrate 5 during handling of the substrate, since the static electricity can be guided to the outside through the antireflection film 40, the dielectric breakdown of the light receiving element 4 is prevented. You can Further, since this antireflection film is connected to the ground line of the image sensor drive circuit, it is possible to block unnecessary electric noise from the outside of the image sensor.

Next, a method of manufacturing the image sensor shown in FIG. 8 will be described. First, three rows of light receiving elements 4 are formed on the glass substrate 3 by using a known method for manufacturing an optical semiconductor element to form a sensor substrate. In addition, a well-known dyeing method for the glass substrate 6,
The color filters 7, 11, 12 are formed by a dispersion method, an electrodeposition method, a multilayer interference film method, or the like, and then a conductive film is formed on the surface of the glass substrate 6 opposite to the surface on which the color filters are formed. To do. This conductive film can be formed by depositing a conductive material having a light reflection preventing function such as Cr, Si, Ti, and Al by a vapor deposition method or a sputtering method. Next, by photolithography, at least the conductive film on the region where the light receiving element 4 is formed is removed,
A filter substrate including the antireflection film 40 is prepared.

Next, the sensor substrate and the filter substrate prepared as described above are attached by the transparent adhesive layer 8.
At this time, it is natural that the light receiving element 4 of the sensor substrate and the color filters 7, 11, 12 of the filter substrate face each other. As the transparent adhesive layer 8, an epoxy-based adhesive such as Arteco RX-7901-1 (manufactured by Alpha Giken) can be used. Next, the one in which the sensor substrate and the filter substrate are bonded together is cut into a predetermined substrate size, and the drive circuit board 9 is further bonded to the other surface of the sensor substrate by the adhesive layer 10, and finally the end surface and the side surface are shielded from light. The film 27 is formed. As the adhesive layer 10, a silicone resin such as SE-91 is used.
40 (manufactured by Toray Dow Corning Silicone Co., Ltd.) or the like can be used, and the light shielding layer 27 is, for example, a color mosaic C.
It can be formed by applying K-2000 (manufactured by Fuji Hunt) by spin coating or roll coating.

Next, a method of manufacturing the image sensor shown in FIG. 9 will be described. First, three rows of light receiving elements 4 are formed on the glass substrate 3 by using a known method for manufacturing an optical semiconductor element to form a sensor substrate. In addition, a well-known dyeing method for the glass substrate 6,
The color filters 7, 11, 12 are formed by a dispersion method, an electrodeposition method, a multilayer interference film method, or the like, and then an insulating film is formed on the surface of the glass substrate 6 opposite to the surface on which the color filters are formed. To do. This insulating film is, for example, a color mosaic CK-
It can be formed by applying 2000 (manufactured by Fuji Hunt) or the like to the entire surface by a spin coating method, a roll coating method or the like. Next, by photolithography, the insulating film on at least the region where the light receiving element 4 is formed is removed to form the light shielding portion 41, and then the transparent conductive film 42 is formed on the light shielding portion 41. Bake. Transparent conductive film 42
Is In ₂ O ₃ , SnO ₂ , ITO, Sb ₂ O ₃ , ZnO,
It can be formed by depositing TiO ₂ or the like by a vapor deposition method or a sputtering method.

Next, the sensor substrate and the filter substrate prepared as described above are attached by the transparent adhesive layer 8.
At this time, it is natural that the light receiving element 4 of the sensor substrate and the color filters 7, 11, 12 of the filter substrate face each other. As the transparent adhesive layer 8, an epoxy-based adhesive such as Arteco RX-7901-1 (manufactured by Alpha Giken) can be used. Next, the one in which the sensor substrate and the filter substrate are bonded together is cut into a predetermined substrate size, and the drive circuit board 9 is further bonded to the other surface of the sensor substrate by the adhesive layer 10, and finally the end surface and the side surface are shielded from light. The film 27 is formed. As the adhesive layer 10, a silicone resin such as SE-91 is used.
40 (manufactured by Toray Dow Corning Silicone Co., Ltd.) or the like can be used, and the light shielding layer 27 is, for example, a color mosaic C.
It can be formed by applying K-2000 (manufactured by Fuji Hunt) by spin coating or roll coating.

Next, the configuration of the fifth embodiment of the present invention is shown in FIG.
It shows in 0. 10A is a partial cross-sectional view of the light-receiving element array along the FS direction, and FIG. 10B is a cross-sectional view along the SS direction.
In the image sensor shown in FIG. 10, the antireflection film 45 is formed on the surface of the filter substrate 5 on which the color filters 7, 11 and 12 are formed, except the color filter portions 7, 11 and 12, and the image sensor. This is different from the conventional configuration in that the light-shielding film 27 is formed on the end surface and the side surface. The antireflection film 45 can also be formed by depositing a conductive material such as Cr, Si, Ti, and Al having a function of preventing reflection of light on the region of the filter substrate 5 excluding the color filter portion. In addition, it is formed by first depositing an insulating material having a function of preventing light reflection on a region other than the color filter portion, and then depositing a transparent conductive material on the insulating film. You can also
FIG. 10 is a diagram showing the former configuration, in which the antireflection film 45 is formed of a conductive material having a function of preventing reflection of light. On the other hand, FIG. 11 is a diagram showing an example of the latter configuration, in which the antireflection film 45 is formed of a light shielding portion 46 made of an insulating layer and a transparent conductive film 47. Others are the same as those in FIG.

According to this structure, it is possible to prevent incident light from other than the color filter portion, and therefore the light receiving element 4
It is possible to prevent excessive light from entering the light receiving element 4
It is possible to suppress variations in sensitivity. Further, even if static electricity is accumulated on the transparent substrate 6 of the filter substrate 5 during handling of the substrate, the static electricity is accumulated on the antireflection film 45.
Since the light can be guided to the outside via the, the dielectric breakdown of the light receiving element 4 can be prevented. Furthermore, since this antireflection film is connected to the ground line of the image sensor drive circuit,
It is possible to block unnecessary electric noise from the outside of the image sensor.

Next, a method of manufacturing the image sensor shown in FIG. 10 will be described. 12 is a view showing a manufacturing process of the image sensor shown in FIG. 10, and is a cross-sectional view taken along the sub-scanning (SS) direction. First, as shown in FIG. 12A, the color filter portions 7, 11, 12 are formed on the glass substrate 6. As a method for forming the color filter portion, a dyeing method, a dispersion method, an electrodeposition method, a multilayer interference film method and the like are known. Now, if the color filter portion is formed by the dispersion method, the color is formed on the glass substrate 6. A mosaic (manufactured by Fuji Hunt) is uniformly applied by a spin coating method or a roll coating method, and then color filter portions of three colors of R, G, B are formed by a photolithography method.

Next, a conductive film is formed on the surface of the glass substrate 6 on which the color filter portion is formed. This conductive film is made of Cr,
It can be formed by depositing a conductive material having a light reflection preventing function such as Si, Ti, or Al by a vapor deposition method or a sputtering method. Next, the conductive material formed on the color filter portion is removed by photolithography to form a filter substrate including the antireflection film 45 shown in FIG. 12B. Next, as shown in FIG. 12C, the filter substrate prepared as described above and the sensor substrate in which three rows of light receiving elements 4 are formed on the glass substrate 3 by using a known method for manufacturing an optical semiconductor element are transparently bonded. Attach by layer 8. At this time, it is natural that the light receiving element 4 of the sensor substrate and the color filters 7, 11, 12 of the filter substrate face each other. As the transparent adhesive layer 8, an epoxy-based adhesive such as Arteco RX-7901-1 (manufactured by Alpha Giken) can be used.

Next, the bonded sensor substrate and filter substrate are cut into a predetermined substrate size, and the drive circuit substrate 9 is further bonded to the other surface of the sensor substrate by the adhesive layer 10, and finally FIG. 12D. As shown in, the light shielding film 27 is formed on the end surface and the side surface. Silicon resin such as SE-9140 (manufactured by Toray Dow Corning Silicone Co., Ltd.) may be used as the adhesive layer 10, and the light-shielding layer 27 may be color mosaic CK-2000 (manufactured by Fuji Hunt) by spin coating or roll. It can be formed by applying by a coating method.

Next, a method of manufacturing the image sensor shown in FIG. 11 will be described. FIG. 13 is a view showing a manufacturing process of the image sensor shown in FIG. 11, and is a cross-sectional view taken along the sub-scanning (SS) direction. First, the color filter portions 7, 11, 12 are formed on the glass substrate 6 in the same manner as described with reference to FIG. 12A.
To form the filter substrate shown in FIG. 13A. Next, on the surface of the glass substrate 6 on which the color filter portion is formed,
An insulating film having a function of preventing light reflection is formed. This insulating film can be formed, for example, by applying color mosaic CK-2000 (manufactured by Fuji Hunt) or the like on the entire surface by a spin coating method, a roll coating method, or the like. Next, the insulating film formed on the color filter portion is removed by photolithography to form a filter substrate including the light shielding portion 46, and then the transparent conductive film 47 is formed on the light shielding portion 46. And bake. As a result,
As shown in FIG. 3B, it is possible to obtain the filter substrate including the antireflection film including the light shielding film 46 and the transparent conductive film 47. Here, the transparent conductive film 47 is made of In ₂ O ₃ , SnO ₂ ,
It can be formed by depositing ITO, Sb ₂ O ₃ , ZnO, TiO ₂ or the like by a vapor deposition method or a sputtering method.

Next, as shown in FIG. 13C, a filter substrate prepared as described above, and a sensor substrate having three rows of light receiving elements 4 formed on the glass substrate 3 by a known method for manufacturing an optical semiconductor element. Is attached by the transparent adhesive layer 8. At this time, it is natural that the light receiving element 4 of the sensor substrate and the color filters 7, 11, 12 of the filter substrate face each other. As the transparent adhesive layer 8, an epoxy-based adhesive such as Arteco RX-7901-1 (manufactured by Alpha Giken) can be used. Next, the one obtained by bonding the sensor substrate and the filter substrate is cut into a predetermined substrate size, and the drive circuit substrate 9 is further bonded to the other surface of the sensor substrate by the adhesive layer 10, and finally as shown in FIG. 13D. Then, the light shielding film 27 is formed on the end surface and the side surface. Silicon resin such as SE-9140 (manufactured by Toray Dow Corning Silicone Co., Ltd.) may be used as the adhesive layer 10, and the light-shielding layer 27 may be color mosaic CK-2000 (manufactured by Fuji Hunt) by spin coating or roll. It can be formed by applying by a coating method.

[Brief description of drawings]

FIG. 1 is a diagram showing a configuration of a first exemplary embodiment of the present invention.

FIG. 2 is a cross-sectional view showing the method of manufacturing the image sensor shown in FIG.

FIG. 3 is a diagram showing a configuration example of a second exemplary embodiment of the present invention.

FIG. 4 is a diagram showing another configuration example of the second exemplary embodiment of the present invention.

FIG. 5 is a cross-sectional view showing the method of manufacturing the image sensor shown in FIG.

FIG. 6 is a cross-sectional view showing the method of manufacturing the image sensor shown in FIG.

FIG. 7 is a diagram showing a configuration of a third exemplary embodiment of the present invention.

FIG. 8 is a diagram showing a configuration example of a fourth exemplary embodiment of the present invention.

FIG. 9 is a diagram showing another configuration example of the fourth exemplary embodiment of the present invention.

FIG. 10 is a diagram showing a configuration example of a fifth embodiment of the present invention.

FIG. 11 is a diagram showing another configuration example of the first exemplary embodiment of the present invention.

12 is a cross-sectional view showing the method of manufacturing the image sensor shown in FIG.

13 is a cross-sectional view showing the method of manufacturing the image sensor shown in FIG.

FIG. 14 is a diagram showing a configuration example of a conventional image sensor.

FIG. 15 is a diagram for explaining a problem of the conventional image sensor.

[Explanation of symbols]

2 ... Image sensor substrate, 3 ... Glass substrate, 4 ... Light receiving element, 5 ... Color filter substrate, 6 ... Glass substrate, 7 ... Color filter, 8 ... Transparent adhesive layer, 9 ... Driving circuit substrate, 1
0 ... Adhesive layer.

Claims (5)

[Claims] 1. An image sensor in which a light receiving element is formed on one surface of a transparent substrate, wherein an antireflection film is formed on at least a surface opposite to a surface on which the light receiving element is formed. Image sensor. 2. An image sensor in which a light receiving element is formed on one surface of a transparent substrate, wherein an antireflection film is formed on the entire surface excluding the light receiving element or the peripheral portion of the light receiving element. 3. An image sensor formed by laminating an image sensor substrate having a light receiving element formed on one surface of a transparent substrate and a color filter substrate having a color filter formed on one surface of the transparent substrate. In the above, an antireflection film is formed of an insulating material on the entire surface of the image sensor substrate excluding the light receiving element or on the peripheral portion of the light receiving element, and the antireflection film on the side opposite to the surface of the color filter substrate bonded to the image sensor substrate. An image sensor having a transparent conductive film formed on its surface. 4. An image sensor formed by bonding an image sensor substrate having a light receiving element formed on one surface of a transparent substrate and a color filter substrate having a color filter formed on one surface of the transparent substrate. In the above, an antireflection film is formed on the entire surface of the color filter substrate opposite to the surface bonded to the image sensor substrate, excluding the area corresponding to the light receiving element, or the peripheral portion of the area corresponding to the light receiving element. Image sensor characterized by. 5. An image sensor formed by laminating an image sensor substrate having a light receiving element formed on one surface of a transparent substrate and a color filter substrate having a color filter formed on one surface of the transparent substrate. 2. An image sensor, wherein an antireflection film is formed on a region of the surface of the color filter substrate on which the color filter is formed, excluding the color filter portion.