JPH0536636A - Dry etching equipment of semiconductor device - Google Patents
Dry etching equipment of semiconductor deviceInfo
- Publication number
- JPH0536636A JPH0536636A JP19049491A JP19049491A JPH0536636A JP H0536636 A JPH0536636 A JP H0536636A JP 19049491 A JP19049491 A JP 19049491A JP 19049491 A JP19049491 A JP 19049491A JP H0536636 A JPH0536636 A JP H0536636A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- corrosive
- gas line
- line
- liquefied gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体装置のドライエ
ッチング装置に関し、特にガス配管系の構造に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dry etching apparatus for semiconductor devices, and more particularly to the structure of a gas piping system.
【０００２】[0002]
【従来の技術】従来のドライエッチング装置のガス配管
系は、図２に示すように、腐食性液化ガス用石英容器１
５より供給される腐食性液化ガスは、他の腐食性ガス・
フレオンガス・Ｏ2 ガスと配管内で混合され同時にエッ
チングチャンバー２２内へ導入される。2. Description of the Related Art A gas pipe system of a conventional dry etching apparatus is, as shown in FIG. 2, a quartz container 1 for corrosive liquefied gas.
The corrosive liquefied gas supplied from 5 is
Freon gas and O 2 gas are mixed in the pipe and simultaneously introduced into the etching chamber 22.
【０００３】[0003]
【発明が解決しようとする課題】この従来のドライエッ
チング装置のガス配管系では、腐食性液化ガス容器が石
英容器であるため、購入時の専用容器より移し替える作
業が必要となる。そのため、移し替え作業時、大気に触
れ腐食性液化ガスの純度が低下するという問題があっ
た。また腐食性液化ガス容器内に混入した大気と反応
し、反応生成物が配管内に付着したり、腐食性液化ガス
ラインの送気バルブ１の二次側にＯ2 ガスラインが接続
しているため、反応しやすい配管構造となっている。In the gas piping system of the conventional dry etching apparatus, since the corrosive liquefied gas container is a quartz container, it is necessary to transfer it from a dedicated container at the time of purchase. Therefore, there is a problem that the purity of the corrosive liquefied gas is lowered when it is exposed to the atmosphere during the transfer work. Further, it reacts with the atmosphere mixed in the corrosive liquefied gas container, the reaction product adheres to the inside of the pipe, and the O 2 gas line is connected to the secondary side of the gas feeding valve 1 of the corrosive liquefied gas line. Therefore, the piping structure is easy to react.
【０００４】そのため配管内に付着した反応生成物がエ
ッチングチャンバー内に進入するという問題があった。Therefore, there is a problem that the reaction product attached to the pipe enters the etching chamber.
【０００５】また、ガス配管系のメンテ後のリークテス
トは、真空引きによるエッチングチャンバー用圧力計で
の確認のみであり、ガス配管系単体での加圧方式のリー
クテストは、できないという問題があった。Further, the leak test after the maintenance of the gas pipe system is only confirmed by the pressure gauge for the etching chamber by evacuation, and there is a problem that the pressurization type leak test cannot be performed with the gas pipe system alone. It was
【０００６】本発明の目的は、腐食性液化ガスの移し替
え作業をなくし、液化ガスの純度低下，それに基く反応
生成物の配管内の付着，Ｏ2 ガス接続位置に基く反応生
成物を防ぎ反応生成物のエッチングチャンバーへの進入
を防ぐことができ、かつガス配管系計を単体での加圧リ
ークテストおよび腐食性ガスラインのパージができる半
導体装置のエッチング装置を提供することにある。The object of the present invention is to eliminate the work of transferring the corrosive liquefied gas, to reduce the purity of the liquefied gas, to prevent the reaction product from adhering in the pipe, and to prevent the reaction product based on the O 2 gas connection position. An object of the present invention is to provide an etching apparatus for a semiconductor device, which can prevent a product from entering the etching chamber, and can perform a pressurized leak test and a purge of a corrosive gas line by using a gas pipe system meter alone.
【０００７】[0007]
【課題を解決するための手段】本発明の半導体装置のド
ライエッチング装置は、腐食性液化ガスラインと、その
腐食性液化ガスラインの送気バルブの二次側に接続され
た腐食性ガス，フレオンガス，Ｏ2 ガス等のガスライン
を有し腐食性液化ガスと腐食性ガス，フレオンガス，Ｏ
2 ガス等を混合してエッチングチャンバーに導入してエ
ッチングを行う半導体装置のエッチング装置において、
腐食性ガスを供給するガスボンベと、少なくともそれぞ
れ単独配管されエッチングチャンバーのガス導入口で接
続された腐食性液化ガスラインおよびＯ2 ガスライン
と、エッチングチャンバーガス導入口直前に接続された
ガスラインフィルターと、腐食性液化ガスのパージおよ
びガス配管系全体の加圧方式によるリークテストを可能
にするために腐食性液化ラインに接続された不活性ガス
ラインとを有することを特徴として構成される。A dry etching apparatus for a semiconductor device according to the present invention comprises a corrosive liquefied gas line and a corrosive gas or a Freon gas connected to the secondary side of an air supply valve of the corrosive liquefied gas line. , O 2 gas and other gas lines are provided, and corrosive liquefied gas and corrosive gas, Freon gas, O
In a semiconductor device etching apparatus that mixes 2 gases and the like and introduces them into an etching chamber to perform etching,
A gas cylinder for supplying a corrosive gas, at least a corrosive liquefied gas line and an O 2 gas line that are individually piped and connected to a gas inlet of the etching chamber, and a gas line filter connected immediately before the gas inlet of the etching chamber. , An inert gas line connected to the corrosive liquefaction line in order to enable a corrosive liquefied gas purge and a leak test by a pressurization method of the entire gas piping system.
【０００８】[0008]
【実施例】次に本発明について図面を参照して説明す
る。図１は本発明の一実施例の配管系統図である。The present invention will be described below with reference to the drawings. FIG. 1 is a piping system diagram of an embodiment of the present invention.
【０００９】図１に示すように、腐食性液化ガスボンベ
２１より供給される腐食性液化ガスは、腐食性液化ガス
供給バルブ１６，腐食性液化ガス送気バルブ２，腐食性
液化ガスマスフロー８，腐食性液化ガス送気バルブ１を
とおり他のガスと配管途中で混合されず、送気バルブ１
を開けることによりエッチングチャンバー２２に導入さ
れる。As shown in FIG. 1, the corrosive liquefied gas supplied from the corrosive liquefied gas cylinder 21 includes a corrosive liquefied gas supply valve 16, a corrosive liquefied gas supply valve 2, a corrosive liquefied gas mass flow 8, and a corrosive liquefied gas. The liquefied liquefied gas air supply valve 1 is not mixed with other gas in the middle of the piping, and the air supply valve 1
It is introduced into the etching chamber 22 by opening.
【００１０】同様にＯ2 ガスもＯ2 ガス供給バルブ１
４，Ｏ2 ガスマスフロー１１，Ｏ2 ガス送気バルブのラ
インを有しエッチングチャンバー内へ導入される。Similarly, O 2 gas is also supplied with an O 2 gas supply valve 1.
4, O 2 gas mass flow 11 and O 2 gas gas supply valve lines are introduced into the etching chamber.
【００１１】一方腐食性ガスは腐食性ガス供給バルブ１
２，腐食性ガス送気バルブ４，腐食性ガスフロー９，腐
食性ガス送気バルブ３，またフレオンガスは同様にフレ
オンガス供給バルブ１３，フレオンガス用マスフロー１
０，フレオンガス送気バルブを経てエッチングチャンバ
ーに導入される。また、不活性ガスラインは腐食性液化
ガス供給バルブの前に不活性ガス供給バルブ１９，不活
性ガス送気バルブ１７を経て接続され、途中に不活性ガ
ス用圧力計１８を備えている。不活性ガス用送気バルブ
１７を開けることにより、腐食性液化ガスラインは、必
要に応じ、配管内のパージをすることができる。On the other hand, the corrosive gas is a corrosive gas supply valve 1.
2, corrosive gas supply valve 4, corrosive gas flow 9, corrosive gas supply valve 3, and also Freon gas supply valve 13, Freon gas mass flow 1
0, it is introduced into the etching chamber through a Freon gas supply valve. Further, the inert gas line is connected via an inert gas supply valve 19 and an inert gas gas supply valve 17 before the corrosive liquefied gas supply valve, and is provided with an inert gas pressure gauge 18 on the way. By opening the inert gas gas supply valve 17, the corrosive liquefied gas line can be purged in the pipe, if necessary.
【００１２】[0012]
【発明の効果】以上説明したように本発明は、腐食性液
化ガス容器をボンベ化したことで大気に触れることな
く、腐食性液化ガスの純度は従来の９９．８％以上だっ
たものが９９．９９％以上となり品質向上の効果を有す
る。As described above, according to the present invention, since the corrosive liquefied gas container is made into a cylinder, the corrosive liquefied gas has a purity of 99.8% or more of that of the conventional one without exposing to the atmosphere. It has an effect of improving the quality because it is over 99%.
【００１３】また、腐食性液化ガスラインとＯ2 ガスラ
インをそれぞれ単独配管にしたので、配管内での反応生
成物の付着はなくなり更に反応生成物以外の汚れ・ゴミ
が発生した場合でもガスラインフィルターにより除去で
きる。Further, since the corrosive liquefied gas line and the O2 gas line are respectively provided as independent pipes, the gas line filter can be used even when the reaction products do not adhere to the pipes and dirt and dust other than the reaction products are generated. Can be removed by
【００１４】また不活性ガスラインを接続してあるた
め、腐食性ガスラインのパージ及びガス配管系全体の加
圧テストができる。Since the inert gas line is connected, the corrosive gas line can be purged and the pressure test of the entire gas piping system can be performed.
【図１】本発明の一実施例のガス配管系統図である。FIG. 1 is a gas piping system diagram of an embodiment of the present invention.
【図２】従来のエッチング装置のガス配管系統図であ
る。FIG. 2 is a gas piping system diagram of a conventional etching apparatus.
１，２ 腐食性液化ガス送気バルブ ３，４ 腐食性ガス送気バルブ ５ フレオンガス送気バルブ ６ Ｏ2 ガス送気バルブ ７ ガス導入口バルブ ８ 腐食性液化ガス用マスフロー ９ 腐食性ガス用マスフロー １０ フレオンガス用マスフロー １１ Ｏ2 ガス用マスフロー １２ 腐食性ガス供給バルブ １３ フレオンガス供給バルブ １４ Ｏ2 ガス供給バルブ １５ 腐食性液化ガス石英容器 １６ 腐食性液化ガス供給バルブ １７ 不活性ガス送気バルブ １８ 不活性ガス用圧力計 １９ 不活性ガス供給バルブ ２０ ガスラインフィルター ２１ 腐食性液化ガスボンベ ２２ エッチングチャンバー1, 2 corrosive liquefied gas gas supply valve 3, 4 corrosive gas gas supply valve 5 Freon gas gas supply valve 6 O 2 gas gas supply valve 7 gas inlet valve 8 corrosive liquefied gas mass flow 9 corrosive gas mass flow 10 Freon gas mass flow 11 O 2 gas mass flow 12 Corrosive gas supply valve 13 Freon gas supply valve 14 O 2 gas supply valve 15 Corrosive liquefied gas quartz container 16 Corrosive liquefied gas supply valve 17 Inert gas supply valve 18 Inert gas Pressure gauge 19 Inert gas supply valve 20 Gas line filter 21 Corrosive liquefied gas cylinder 22 Etching chamber
Claims (1)
ガスラインの送気バルブの二次側に接続された腐食性ガ
ス，フレオンガス，Ｏ2 ガスライン等を有し、前記腐食
性液化ガスと前記腐食性ガス，フレオンガス，Ｏ2 ガス
等を混合してエッチングチャンバーに導入してエッチン
グを行う半導体装置のエッチング装置において、前記腐
食性ガスを供給するガスボンベと、少なくともそれぞれ
単独配管されエッチングチャンバーのガス導入口で接続
された腐食性液化ガスラインおよびＯ2 ガスラインと、
エッチングチャンバーガス導入口直前に接続されたガス
ラインフィルターと、腐食性液化ガスラインのパージお
よびガス配管系全体の加圧方式によるリークテストを可
能にするために腐食性液化ガスラインに接続された不活
性ガスラインとを有することを特徴とする半導体装置の
ドライエッチング装置。Claim: What is claimed is: 1. A corrosive liquefied gas line and a corrosive gas, a Freon gas, an O 2 gas line, etc. connected to the secondary side of an air supply valve of the corrosive liquefied gas line. In a semiconductor device etching apparatus that mixes the corrosive liquefied gas with the corrosive gas, Freon gas, O 2 gas, etc. and introduces them into an etching chamber for etching, at least a gas cylinder supplying the corrosive gas, A corrosive liquefied gas line and an O2 gas line, which are independently piped and connected through a gas inlet of the etching chamber,
The gas line filter connected immediately before the gas inlet of the etching chamber and the non-connected gas line filter to enable the leak test by purging the corrosive liquefied gas line and pressurizing the entire gas piping system. A dry etching apparatus for a semiconductor device, comprising an active gas line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19049491A JPH0536636A (en) | 1991-07-31 | 1991-07-31 | Dry etching equipment of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19049491A JPH0536636A (en) | 1991-07-31 | 1991-07-31 | Dry etching equipment of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0536636A true JPH0536636A (en) | 1993-02-12 |
Family
ID=16259030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19049491A Pending JPH0536636A (en) | 1991-07-31 | 1991-07-31 | Dry etching equipment of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0536636A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0955369A (en) * | 1995-08-16 | 1997-02-25 | Nec Corp | Vacuum treatment apparatus and detection method for mixing of air into vacuum treatment apparatus |
| CN115666005A (en) * | 2022-12-15 | 2023-01-31 | 赛福仪器承德有限公司 | Plasma etching machine |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6089658A (en) * | 1983-10-20 | 1985-05-20 | 三洋電機株式会社 | Method of testing leakage of refrigeration circuit |
| JPS61171127A (en) * | 1985-01-25 | 1986-08-01 | Hitachi Ltd | Plasma etching method |
| JPH0283930A (en) * | 1988-09-21 | 1990-03-26 | Hitachi Ltd | Method and apparatus for manufacturing copper wiring |
-
1991
- 1991-07-31 JP JP19049491A patent/JPH0536636A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6089658A (en) * | 1983-10-20 | 1985-05-20 | 三洋電機株式会社 | Method of testing leakage of refrigeration circuit |
| JPS61171127A (en) * | 1985-01-25 | 1986-08-01 | Hitachi Ltd | Plasma etching method |
| JPH0283930A (en) * | 1988-09-21 | 1990-03-26 | Hitachi Ltd | Method and apparatus for manufacturing copper wiring |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0955369A (en) * | 1995-08-16 | 1997-02-25 | Nec Corp | Vacuum treatment apparatus and detection method for mixing of air into vacuum treatment apparatus |
| CN115666005A (en) * | 2022-12-15 | 2023-01-31 | 赛福仪器承德有限公司 | Plasma etching machine |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW406306B (en) | Gas panel | |
| US5449294A (en) | Multiple valve assembly and process | |
| US5749389A (en) | Purgeable connection for gas supply cabinet | |
| KR200191426Y1 (en) | Equipment for leak test with tracer gas | |
| CA2080633C (en) | Gas delivery panels | |
| JPH0536636A (en) | Dry etching equipment of semiconductor device | |
| JP5065115B2 (en) | Gas supply system | |
| JP2001041398A (en) | Method for filling delivery line with corrosive gas and device therefor | |
| JPH09269100A (en) | Mixed gas supplying piping system | |
| JP3289190B2 (en) | Semiconductor process gas supply system | |
| JP2005514561A (en) | Fluid transfer device and base plate | |
| JP2003257870A (en) | Manufacturing system of semiconductor device and gas supply method | |
| JP2000257797A (en) | Valve for liquefied petroleum gas cylinder with pressure reducing function | |
| JPH1057798A (en) | Liquid material supply device and material supply method | |
| JPH01287277A (en) | Raw material gas feed section in cvd apparatus | |
| JPH02276243A (en) | Plasma etching device | |
| JP2000195806A (en) | Bulk supply device for semiconductor process gas and gas supply method using the same | |
| CN218762704U (en) | Purging replacement panel | |
| JP2003146399A (en) | Method for purging connection part of material-tank in liquid-material delivery system | |
| JPH0265226A (en) | Atmospheric film forming device | |
| JPH0587298A (en) | Gas supplying method and gas supplying device | |
| JPH07206586A (en) | Apparatus for epitaxial growth | |
| JPH085545Y2 (en) | Semiconductor manufacturing equipment | |
| JPH10250712A (en) | Method and apparatus for tightly plugging drum with pressure applied | |
| JP2635653B2 (en) | Exhaust processing unit and method of operating the same in vapor phase epitaxy apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 19971104 |