JPH05335274A - Plasma generation device - Google Patents
Plasma generation deviceInfo
- Publication number
- JPH05335274A JPH05335274A JP14028592A JP14028592A JPH05335274A JP H05335274 A JPH05335274 A JP H05335274A JP 14028592 A JP14028592 A JP 14028592A JP 14028592 A JP14028592 A JP 14028592A JP H05335274 A JPH05335274 A JP H05335274A
- Authority
- JP
- Japan
- Prior art keywords
- discharge chamber
- gas
- wafer
- quartz plate
- supply port
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、マイクロ波プラズマ生
成装置に係り、特に、半導体素子基板等の試料に対しマ
イクロ波プラズマを利用して処理の高速化を図るのに好
適なマイクロ波プラズマ生成装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a microwave plasma generator, and more particularly, to a microwave plasma generator suitable for increasing the processing speed of a sample such as a semiconductor element substrate by using microwave plasma. Regarding the device.
【０００２】[0002]
【従来の技術】従来のマイクロ波生成技術は、例えば、
ニッケイ マイクロデバイセス（NIKKEI MICRODEVICES)
１９９０年８月号，８８頁，図５に記載のように、マイ
クロ波を伝播する導波管内にプラズマ生成室を有し、外
部磁場とマイクロ波電界の作用によりこの導波管内にプ
ラズマを生成するようになっている。そして、このプラ
ズマを利用して、半導体ウエハ基板は処理される。2. Description of the Related Art Conventional microwave generation techniques are, for example,
NIKKEI MICRODEVICES
As shown in the August 1990 issue, p. 88, FIG. 5, a plasma generation chamber is provided in a waveguide for propagating microwaves, and plasma is generated in the waveguide by the action of an external magnetic field and a microwave electric field. It is supposed to do. Then, the semiconductor wafer substrate is processed by utilizing this plasma.
【０００３】[0003]
【発明が解決しようとする課題】上記従来技術では、プ
ロセスガスの導入を反応副生成物の排気と無関係に設定
しているため、反応副生成物のウエハへの再付着が多
く、ウエハの汚染や処理速度の低下が問題となってい
た。In the above prior art, since the introduction of the process gas is set independently of the exhaust of the reaction by-products, the reaction by-products are often redeposited on the wafer and the wafer is contaminated. And a decrease in processing speed has been a problem.
【０００４】本発明の目的は、無汚染で高速度のウエハ
処理ができるプラズマ生成装置を提供することにある。An object of the present invention is to provide a plasma generation apparatus which is capable of high-speed wafer processing without contamination.
【０００５】[0005]
【課題を解決するための手段】上記目的を達成するため
に、本発明はマイクロ波生成ガスの供給口をウエハに対
向させ、中心部に集中させた。In order to achieve the above object, in the present invention, the microwave generating gas supply port is opposed to the wafer and concentrated in the central portion.
【０００６】[0006]
【作用】ウエハのすぐ上に形成される反応副生成物の溜
った領域を生成ガスが流れるため、反応副生成物が排気
されやすくなる。Since the generated gas flows through the region where the reaction by-products are formed immediately above the wafer, the reaction by-products are easily exhausted.
【０００７】[0007]
【実施例】本発明の一実施例を図１，図２，図３で説明
する。図１は有磁場型のマイクロ波プラズマ処理装置の
ブロック図である。図２，図３は発明の断面図および平
面図である。放電室１はマグネトロンであり、マイクロ
波の発振源である。３〜６は、導波管である。ここで、
３は、矩形導波管であり、４は円形導波管、６はテーパ
管である。放電室７は、例えば、純度の高いアルミ等で
作られており、導波管の役目もしている。８は、真空室
である。９は放電室７にマイクロ波を供給するための石
英板である。１０，１１はソレノイドコイルであり、放
電室７内に磁場を与える。１２は、半導体素子基板（以
下、ウエハ）１４を載置する試料台であり、バイアス用
電源、例えば、ＲＦ電源１３が接続できるようになって
いる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a block diagram of a magnetic field type microwave plasma processing apparatus. 2 and 3 are a sectional view and a plan view of the invention. The discharge chamber 1 is a magnetron, which is a microwave oscillation source. Reference numerals 3 to 6 are waveguides. here,
3 is a rectangular waveguide, 4 is a circular waveguide, and 6 is a taper. The discharge chamber 7 is made of, for example, high-purity aluminum or the like, and also functions as a waveguide. 8 is a vacuum chamber. Reference numeral 9 is a quartz plate for supplying microwaves to the discharge chamber 7. Reference numerals 10 and 11 denote solenoid coils that apply a magnetic field to the discharge chamber 7. Reference numeral 12 is a sample table on which a semiconductor element substrate (hereinafter, wafer) 14 is placed, and a bias power source, for example, an RF power source 13 can be connected thereto.
【０００８】１６は放電室７内，真空室８内を減圧排気
するための真空ポンプ系である。１５は放電室７内にエ
ッチング，成膜等の処理を行うガスを供給するガス供給
系である。放電室７の石英板９の内側には、ガス供給口
１７を持つ石英板１８が設置され、石英板９と石英板１
８との間にはガスを溜めるための空間１９が設けられて
いる。石英板９と石英１８との距離は、プラズマが侵入
しないように微小距離に設定される。放電室７の側壁
７′の中には通路２０が設置され、通路２０は空間１９
とガス供給系１５と連通している。放電室７には、ガス
の排出口２１が設けられ、真空室８に連通している。ガ
ス供給口１７の大きさは、最大放電室の直径の１／４以
下に設定されている。Reference numeral 16 denotes a vacuum pump system for evacuating the discharge chamber 7 and the vacuum chamber 8 under reduced pressure. Reference numeral 15 is a gas supply system for supplying a gas for performing processing such as etching and film formation into the discharge chamber 7. A quartz plate 18 having a gas supply port 17 is installed inside the quartz plate 9 in the discharge chamber 7, and the quartz plate 9 and the quartz plate 1 are provided.
A space 19 for storing gas is provided between the space 8 and the space 8. The distance between the quartz plate 9 and the quartz 18 is set to a minute distance so that plasma does not enter. A passage 20 is installed in the side wall 7 ′ of the discharge chamber 7, and the passage 20 has a space 19
And the gas supply system 15. The discharge chamber 7 is provided with a gas outlet 21 and communicates with the vacuum chamber 8. The size of the gas supply port 17 is set to 1/4 or less of the diameter of the maximum discharge chamber.
【０００９】尚、図１で、円形導波管５，テーパ管６，
石英板９，試料台１２の試料設置面は同軸の中心軸（図
示省略）を有している。また、試料台１２の試料設置面
でのウエハ１４の設置は、例えば、機械的押しつけ力や
静電吸着力等を利用して実施される。また、試料台１２
は、例えば、温度制御手段（図示省略）を備え、この手
段により試料台１２の試料設置面に設置されたウエハ１
２の温度は所定の温度に調節される。Incidentally, in FIG. 1, a circular waveguide 5, a taper tube 6,
The sample mounting surfaces of the quartz plate 9 and the sample table 12 have a coaxial central axis (not shown). The wafer 14 is set on the sample setting surface of the sample table 12 by using, for example, mechanical pressing force or electrostatic attraction force. In addition, the sample table 12
Is equipped with, for example, temperature control means (not shown), and the wafer 1 mounted on the sample mounting surface of the sample table 12 by this means.
The temperature of 2 is adjusted to a predetermined temperature.
【００１０】マグネトロンは、従来と同様に矩形導波管
３に取り付けられており、例えば、２.４５ＧＨｚ のマ
イクロ波を発振する。一方、放電室７内にはソレノイド
コイル１０，１１により磁場分布が図１（ｂ）に示すよ
うに与えられており、ＥＣＲ点（８７５ガウス）となる
ところが放電室の中央付近に設定されている。The magnetron is attached to the rectangular waveguide 3 as in the conventional case, and oscillates a microwave of 2.45 GHz, for example. On the other hand, the magnetic field distribution is given to the inside of the discharge chamber 7 by the solenoid coils 10 and 11 as shown in FIG. 1B, and the place where the ECR point (875 Gauss) is set is set near the center of the discharge chamber. ..
【００１１】処理ガスは、供給系１５から通路２０を通
り、空間１９に溜り、ガス供給口１７から放電室の内に
導入される。ガスは、放電室７内のプラズマ中で解離さ
れて一部ラジカルとなり、ウエハ１２の表面を処理す
る。この表面の処理により、反応副生成物が放電室７内
に飛散する。放電室７のガスの流れは、ガス供給口１７
から排出口２１に向かうように形成されている。従っ
て、その流れに入った反応副生成物はガスの流れに乗っ
て、排出口２１から廃棄される。しかし、反応副生成物
は発生源のウエハ１２の上に溜りやすい。本実施例によ
れば、ガス供給口が放電室７の中心に絞られているた
め、ガスが、上方から中心軸に沿って下降し、ウエハ１
２に衝突してからウエハ１２の面を通って排出口に向か
うので、反応副生成物が効率的にウエハ１２の面から排
出口へ排気される。The processing gas passes from the supply system 15 through the passage 20, collects in the space 19, and is introduced from the gas supply port 17 into the discharge chamber. The gas is dissociated in the plasma in the discharge chamber 7 to become a part of radicals, and the surface of the wafer 12 is processed. By this surface treatment, reaction by-products are scattered in the discharge chamber 7. The gas flow in the discharge chamber 7 is the gas supply port 17
It is formed so as to face from the discharge port 21 to the discharge port 21. Therefore, the reaction by-product that has entered the flow rides on the gas flow and is discharged from the discharge port 21. However, reaction by-products tend to accumulate on the wafer 12 that is the generation source. According to this embodiment, since the gas supply port is narrowed down to the center of the discharge chamber 7, the gas descends from above along the central axis, and the wafer 1
After hitting the surface of the wafer 12, the reaction by-product is efficiently exhausted from the surface of the wafer 12 to the outlet because the reaction by-product passes through the surface of the wafer 12 toward the outlet.
【００１２】図４に本発明のもう一つの実施例の平面図
を示す。石英板１８に設けられたガス供給口１７が複数
の小さい孔１７ａからなっている。その孔のあいている
領域は、放電室の最大直径の１／４以下に設定されてい
る。このように構成することにより、ガス供給口１７か
らのガスの速度が各供給口に一様になる効果がある。FIG. 4 shows a plan view of another embodiment of the present invention. The gas supply port 17 provided in the quartz plate 18 is composed of a plurality of small holes 17a. The area in which the holes are formed is set to ¼ or less of the maximum diameter of the discharge chamber. With such a configuration, there is an effect that the velocity of the gas from the gas supply port 17 becomes uniform at each supply port.
【００１３】[0013]
【発明の効果】本発明によれば、ウエハ処理によって発
生する反応副生成物を効率的に排気することができ、処
理の高速化を達成できる。According to the present invention, reaction by-products generated by wafer processing can be efficiently exhausted, and the processing speed can be increased.
【図１】本発明の一実施例を示す有磁場型マイクロ波プ
ラズマ処理装置の構成と磁場分布を示すブロック図。FIG. 1 is a block diagram showing the configuration and magnetic field distribution of a magnetic field type microwave plasma processing apparatus showing an embodiment of the present invention.
【図２】本発明の一実施例の断面図。FIG. 2 is a sectional view of an embodiment of the present invention.
【図３】本発明の他の実施例の平面図。FIG. 3 is a plan view of another embodiment of the present invention.
７…放電室、９…石英板、１２…試料台、１４…ウエ
ハ、１７…ガス供給口、１８…石英板、１９…空間、２
０…通路、２１…排出口。7 ... Discharge chamber, 9 ... Quartz plate, 12 ... Sample stage, 14 ... Wafer, 17 ... Gas supply port, 18 ... Quartz plate, 19 ... Space, 2
0 ... passage, 21 ... outlet.
─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成５年２月２４日[Submission date] February 24, 1993
【手続補正１】[Procedure Amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】図面の簡単な説明[Name of item to be corrected] Brief explanation of the drawing
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【図面の簡単な説明】[Brief description of drawings]
【図１】本発明の一実施例を示す有磁場型マイクロ波プ
ラズマ処理装置の構成と磁場分布を示すブロック図。FIG. 1 is a block diagram showing the configuration and magnetic field distribution of a magnetic field type microwave plasma processing apparatus showing an embodiment of the present invention.
【図２】本発明の一実施例の断面図。FIG. 2 is a sectional view of an embodiment of the present invention.
【図３】本発明の他の実施例の平面図。FIG. 3 is a plan view of another embodiment of the present invention.
【図４】本発明のさらに他の実施例の平面図。FIG. 4 is a plan view of still another embodiment of the present invention.
【符号の説明】 ７…放電室、９…石英板、１２…試料台、１４…ウエ
ハ、１７…ガス供給口、１８…石英板、１９…空間、２
０…通路、２１…排出口。[Explanation of Codes] 7 ... Discharge Chamber, 9 ... Quartz Plate, 12 ... Sample Stage, 14 ... Wafer, 17 ... Gas Supply Port, 18 ... Quartz Plate, 19 ... Space, 2
0 ... passage, 21 ... outlet.
フロントページの続き (72)発明者 田村 直行 山口県下松市東豊井794番地 株式会社日 立製作所笠戸工場内Front page continued (72) Inventor Naoyuki Tamura 794 Higashitoyoi, Kudamatsu City, Yamaguchi Prefecture Hitate Manufacturing Co., Ltd. Kasado Factory
Claims (1)
て、プラズマ生成ガスの供給口をウエハと対向するチャ
ンバ壁面に配置したことを特徴とするプラズマ生成装
置。1. A plasma generating apparatus in a magnetic field microwave plasma generating apparatus, wherein a supply port for plasma generating gas is arranged on a wall surface of a chamber facing a wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14028592A JP3314409B2 (en) | 1992-06-01 | 1992-06-01 | Plasma generator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14028592A JP3314409B2 (en) | 1992-06-01 | 1992-06-01 | Plasma generator |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001211529A Division JP2002100620A (en) | 2001-07-12 | 2001-07-12 | Plasma-producing apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH05335274A true JPH05335274A (en) | 1993-12-17 |
| JP3314409B2 JP3314409B2 (en) | 2002-08-12 |
Family
ID=15265230
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14028592A Expired - Lifetime JP3314409B2 (en) | 1992-06-01 | 1992-06-01 | Plasma generator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3314409B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000208496A (en) * | 1999-01-19 | 2000-07-28 | Hitachi Ltd | Dry etching apparatus and fabrication of semiconductor device |
| JP2008277306A (en) * | 1997-01-29 | 2008-11-13 | Foundation For Advancement Of International Science | Plasma device |
-
1992
- 1992-06-01 JP JP14028592A patent/JP3314409B2/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008277306A (en) * | 1997-01-29 | 2008-11-13 | Foundation For Advancement Of International Science | Plasma device |
| JP2009117373A (en) * | 1997-01-29 | 2009-05-28 | Foundation For Advancement Of International Science | Plasma device |
| JP4356117B2 (en) * | 1997-01-29 | 2009-11-04 | 財団法人国際科学振興財団 | Plasma device |
| JP2000208496A (en) * | 1999-01-19 | 2000-07-28 | Hitachi Ltd | Dry etching apparatus and fabrication of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3314409B2 (en) | 2002-08-12 |
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