JPH05299536A - Resin sealed semiconductor device - Google Patents
Resin sealed semiconductor deviceInfo
- Publication number
- JPH05299536A JPH05299536A JP4098042A JP9804292A JPH05299536A JP H05299536 A JPH05299536 A JP H05299536A JP 4098042 A JP4098042 A JP 4098042A JP 9804292 A JP9804292 A JP 9804292A JP H05299536 A JPH05299536 A JP H05299536A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- semiconductor device
- sealing
- package
- sealing material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、樹脂封止型半導体装
置における耐熱性向上の技術に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technique for improving heat resistance in a resin-sealed semiconductor device.
【０００２】[0002]
【従来の技術】樹脂封止型半導体装置のパッケージの耐
熱性を向上させる技術としては、例えば実開昭６３−８
７８３７に開示されたものがあり、以下その従来例を図
２、図３に示し説明する。2. Description of the Related Art As a technique for improving the heat resistance of a package of a resin-sealed semiconductor device, for example, the Japanese Utility Model Laid-Open No. 63-8
No. 7837 is disclosed, and a conventional example thereof will be described below with reference to FIGS. 2 and 3.
【０００３】図２は第１の従来例を示す断面図である。FIG. 2 is a sectional view showing a first conventional example.
【０００４】この例が、これ以前の従来の樹脂封止型半
導体装置と相違する点は、マウント部２の下側の封止樹
脂部４の材質を、マウント部２の下表面のほぼ全面から
封止樹脂部４の下表面に至るまで、封止樹脂部４と密着
性がよく、かつ熱応力を吸収する材質のシリコン樹脂等
にし、この部分を応力緩和樹脂部５とした点にある。This example differs from the conventional resin-encapsulated semiconductor device before this, in that the material of the encapsulating resin portion 4 on the lower side of the mount portion 2 is set from almost the entire lower surface of the mount portion 2. The point is that the stress relieving resin portion 5 is made of silicon resin or the like, which is a material that has good adhesion to the sealing resin portion 4 and absorbs thermal stress, up to the lower surface of the sealing resin portion 4.
【０００５】図２（ｂ）はこの実施例の中間製造工程に
おける樹脂封止型半導体装置の断面図を示す。FIG. 2B is a sectional view of the resin-sealed semiconductor device in the intermediate manufacturing process of this embodiment.
【０００６】応力緩和樹脂部５は、樹脂の注入前に予め
形成されてマウント部２の下表面に固着され、その後、
樹脂の注入が行なわれ封止樹脂部４が形成される。The stress relaxation resin portion 5 is formed in advance before the resin is injected and fixed to the lower surface of the mount portion 2, and thereafter,
Resin is injected to form the sealing resin portion 4.
【０００７】図３は第２の例を示す断面図である。FIG. 3 is a sectional view showing a second example.
【０００８】この例は熱応力が比較的少ない場合の例で
あり、図３（ｂ）に示すように封止樹脂部４ａの成形型
に応力緩和樹脂部５ａ用の凸部を設けて封止樹脂部４ａ
を形成し、その後に、応力緩和樹脂部５ａを形成するこ
とができ、生産性も向上する。This example is an example in which the thermal stress is relatively small. As shown in FIG. 3 (b), the molding die of the sealing resin portion 4a is provided with a convex portion for the stress relaxation resin portion 5a for sealing. Resin part 4a
Can be formed, and then the stress relaxation resin portion 5a can be formed, and the productivity is also improved.
【０００９】従って、半導体素子１が大型化しても、こ
の応力緩和樹脂部５，５ａによりマウント部２，２ａが
保持されるので、接続線６の変形による断線、短絡が防
止でき、またマウント部２，２ａの裏側等の樹脂がまわ
り込む部分が少なくなるので樹脂の未充填部分の発生を
防止することができる。また、電子装置等に実装したと
きには、熱による応力をこの応力緩和樹脂部５，５ａで
吸収するので、封止樹脂部４，４ａにクラックが発生す
ることを防止できる。Therefore, even if the size of the semiconductor element 1 is increased, the mount portions 2 and 2a are held by the stress relaxation resin portions 5 and 5a, so that disconnection and short circuit due to deformation of the connecting wire 6 can be prevented, and the mount portion can be prevented. It is possible to prevent the resin-unfilled portion from being generated because the resin-surrounding portion such as the back side of 2, 2a is reduced. Further, when mounted on an electronic device or the like, the stress due to heat is absorbed by the stress relaxation resin portions 5 and 5a, so that cracks can be prevented from occurring in the sealing resin portions 4 and 4a.
【００１０】[0010]
【発明が解決しようとする課題】しかしながら、前記構
成の装置では、パッケージをプリント基板等に搭載する
リードのハンダ付け工程で、パッケージの加熱によって
パッケージ内部に吸湿された水分が急激にガス化し高圧
化して、パッケージの内部で応力を発生しパッケージの
クラックを発生させるが、前記従来例の応力吸収部材で
の吸収構造では、応力を吸収する面積、体積が小さいの
で、クラックの発生を防止する手段としては技術的に満
足できるものは得られなかった。However, in the apparatus having the above-mentioned structure, in the soldering process of the leads for mounting the package on a printed circuit board or the like, the moisture absorbed inside the package due to heating of the package is rapidly gasified to a high pressure. Then, stress is generated inside the package to generate cracks in the package, but in the absorption structure of the stress absorbing member of the conventional example, since the area and volume for absorbing stress are small, as a means for preventing the occurrence of cracks. I couldn't get anything that was technically satisfactory.
【００１１】この発明は、以上述べたガス化、高圧化し
た水分の応力を応力緩和樹脂部による吸収では完全に吸
収しきれないという問題点を除去するために、パッケー
ジ内で発生したガスを外部に排気し、また外部の水分が
またパッケージ内に進入することを低減し、パッケージ
の信頼性を向上させたパッケージを提供することを目的
とする。In order to eliminate the above-mentioned problem that the stress of the gasified and pressurized water cannot be completely absorbed by the stress relaxation resin portion, the gas generated in the package is removed from the outside. It is an object of the present invention to provide a package in which the reliability of the package is improved by exhausting air into the package and reducing external moisture from entering the package.
【００１２】[0012]
【課題を解決するための手段】この発明は前記目的のた
め、樹脂封止半導体装置において、封止に用いた樹脂中
に進入した水分の外部排出方法として、ゴム状、または
ゲル状の樹脂によって封止樹脂とアイランド間に弁開閉
機構（アイランド下部に中空部を設ける）を設けて外部
にパッケージの加熱によって発生した高圧化した水分ガ
スを排出し、また外部からの水分の浸入を防止するよう
にしたものである。To achieve the above object, the present invention provides a resin-encapsulated semiconductor device which uses a rubber-like or gel-like resin as a method of discharging moisture that has entered the resin used for encapsulation. A valve opening / closing mechanism (a hollow part is provided under the island) is provided between the sealing resin and the island to discharge the high-pressure moisture gas generated by heating the package to the outside and prevent the intrusion of moisture from the outside. It is the one.
【００１３】[0013]
【作用】前述したように本発明は、アイランド裏面に中
空部を形成したシール材を設け、封止樹脂内部に進入し
た水分が加熱高圧ガス化した場合の導出が柔軟性の有る
ゴム状のシール材に中空部によって弁開閉機構を付与し
たので外部導出性が向上する。また、導出路がガスの導
出後また元の場所に戻るので外部から、導出路を伝って
水分、不純物イオンの浸入が防止される。As described above, the present invention provides a rubber-like seal which is provided with a sealing material having a hollow portion formed on the back surface of the island and is flexible when water entering the sealing resin is heated and gasified into high pressure. Since the valve opening / closing mechanism is provided by the hollow portion in the material, the external drawability is improved. Further, since the derivation path returns to the original position after the derivation of the gas, it is possible to prevent moisture and impurity ions from entering from the outside through the derivation path.
【００１４】[0014]
【実施例】図１は、この発明の実施例の製造工程を説明
する断面概略図である。本実施例は、金属の薄板をエッ
チング、プレス等で所定のパターンに加工した、リード
フレーム１を設け、半導体素子２をアイランド３に銀ペ
ースト等によって固着搭載し、金属細線４によって半導
体素子２の主表面に形成された外部導出電極（図示せ
ず）と外部導出リードであるインナーリード５の内方端
とを電気的に導通配線接続（４）し、外殻封止樹脂６に
よって封止し樹脂封止半導体装置を形成するが、本実施
例は特に薄形化されたパッケージに関する技術である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a schematic sectional view for explaining a manufacturing process of an embodiment of the present invention. In this embodiment, a thin metal plate is processed into a predetermined pattern by etching, pressing, or the like, and a lead frame 1 is provided. An external lead electrode (not shown) formed on the main surface and an inner end of the inner lead 5, which is an external lead, are electrically connected by wiring (4) and sealed with an outer shell sealing resin 6. Although a resin-sealed semiconductor device is formed, the present embodiment is a technique relating to a particularly thin package.
【００１５】図１（ａ）は樹脂封止後の断面概略図であ
る。アイランド３の裏面に部材７を付着形成し、柔軟性
を有するゴム状、またはゲル状の部材から成るシール材
８を部材７を包含するように形成し、開孔部９を形成す
る。次いで、金型に前記リードフレーム１を挟持させて
金型に封止樹脂を加圧注入させて、封止樹脂６によって
外殻を形成する。FIG. 1A is a schematic sectional view after resin sealing. A member 7 is attached and formed on the back surface of the island 3, and a sealing material 8 made of a flexible rubber-like or gel-like member is formed so as to include the member 7 to form an opening 9. Next, the lead frame 1 is held between the molds, and a sealing resin is injected under pressure into the molds to form an outer shell with the sealing resin 6.
【００１６】部材７は、低融点金属（例、インジウム、
ハンダ等）または、熱可塑性樹脂（ポリエステル、アク
リル等）を使用するが樹脂封止後シール材８を貫通して
治具によって吸引除去（後述）できる部材であればよく
限定するものではない。The member 7 is made of a low melting point metal (eg, indium,
A solder or the like) or a thermoplastic resin (polyester, acryl, etc.) is used, but it is not limited as long as it is a member that can penetrate the sealing material 8 after resin sealing and can be suctioned and removed (described later).
【００１７】シール材８は、ゴム状のシリコン樹脂が信
頼性及び耐熱性等からも好適である。The sealing material 8 is preferably made of rubber-like silicon resin in terms of reliability and heat resistance.
【００１８】次いで図１（ａ）の構造において、吸引部
１０を設けた吸引装置１１を樹脂封止半導体装置の開孔
部９側に設置し、吸引部１０をシール材８を突き抜けて
押し込んで、部材７を吸引する工程によって前記部材７
を除去し、中空部を有するシール材８を得ることができ
る。部材７を例えばハンダで形成した場合には、吸引部
１０を加熱し、溶融吸引すればよい。また、部材７を樹
脂等で形成した場合には、加熱溶融除去、または有機溶
剤による溶解除去等で実現できる。Next, in the structure shown in FIG. 1A, the suction device 11 provided with the suction portion 10 is installed on the side of the opening 9 of the resin-sealed semiconductor device, and the suction portion 10 is pushed through the sealing material 8 and pushed. , The member 7 by the step of sucking the member 7
Can be removed to obtain the sealing material 8 having a hollow portion. When the member 7 is formed of solder, for example, the suction unit 10 may be heated and melted and sucked. Further, when the member 7 is formed of resin or the like, it can be realized by heat melting removal or dissolution removal by an organic solvent.
【００１９】図１（ｃ）は図１（ｂ）に示した製造工程
によって形成された中空部１２の効果を説明する概略図
である。FIG. 1 (c) is a schematic view for explaining the effect of the hollow portion 12 formed by the manufacturing process shown in FIG. 1 (b).
【００２０】プリント基板（図示せず）等に同図に示し
た樹脂封止半導体装置を搭載するにあたり、リード１と
プリント基板端子（図示せず）とをハンダ付けする工程
において樹脂封止半導体装置の全体が加熱されるので、
加熱によって、封止樹脂６内部に浸入した水分がＡに示
した矢印の方向に水分がガス化し、シール材８と封止樹
脂６の界面に添って導出される。この時、切断部１３が
形成され変形しやすくなっている（吸引部１０を押し込
む時に形成する）ので、シール材８が中空部１２側に変
形し、弁開閉機構の作用効果が得られる。また、Ｂに示
した中空部１２の内部の水分がガス化した場合には、当
然ながらＣに示したように切断部１３から水分はガス化
して導出される。In mounting the resin-sealed semiconductor device shown in the same figure on a printed circuit board (not shown) or the like, the resin-sealed semiconductor device is soldered in the step of soldering the leads 1 and the printed circuit board terminals (not shown). Because the whole of is heated
By heating, the moisture that has penetrated into the sealing resin 6 is gasified in the direction of the arrow indicated by A, and is led out along the interface between the sealing material 8 and the sealing resin 6. At this time, since the cutting portion 13 is formed and is easily deformed (formed when the suction portion 10 is pushed in), the sealing material 8 is deformed toward the hollow portion 12 side, and the effect of the valve opening / closing mechanism is obtained. Further, when the water inside the hollow portion 12 shown in B is gasified, the water is naturally gasified and discharged from the cutting portion 13 as shown in C.
【００２１】以上のように半導体装置内の水分がガス化
しても、外部にすみやかに導出される構造としたので、
クラック等の発生の低減化が期待できる。As described above, even if the moisture in the semiconductor device is gasified, the structure is such that it can be promptly led to the outside.
It can be expected to reduce the occurrence of cracks.
【００２２】また、弁開閉機構であるので、再度水分及
び不純物イオンが内部へ浸入することが低減化される効
果も期待できる。Further, since it is a valve opening / closing mechanism, it is expected that the effect of re-introduction of water and impurity ions into the interior can be reduced.
【００２３】[0023]
【発明の効果】以上、説明したようにこの発明によれ
ば、アイランド裏面に中空部を形成したシール材を設
け、封止樹脂内部に進入した水分が加熱高圧ガス化した
場合の導出が柔軟性の有るゴム状のシール材に中空部に
よって弁開閉機構を付与したので外部導出性が向上する
ことが期待できる。また、導出路がガスの導出後また元
の場所に戻るので外部から導出路を伝って水分、不純物
イオンの浸入が防止されるので信頼性の向上も期待でき
る。As described above, according to the present invention, the sealing material having the hollow portion formed on the back surface of the island is provided, and the moisture that has entered the sealing resin is flexible when it is heated and gasified into high pressure. Since the valve opening / closing mechanism is provided by the hollow portion in the rubber-like sealing material having the above, it can be expected that the outflowability is improved. Further, since the derivation path returns to the original position after the derivation of gas, moisture and impurity ions can be prevented from invading through the derivation path from the outside, so that improvement in reliability can be expected.
【図１】本発明の実施例FIG. 1 Example of the present invention
【図２】従来例その１FIG. 2 Conventional example 1
【図３】従来例その２FIG. 3 Conventional example 2
３ アイランド ７ 部材 ８ シール材 ９ 開孔部 １０ 吸引部 １１ 吸引装置 １２ 中空部 １３ 切断部 3 Island 7 Member 8 Sealing Material 9 Opening Portion 10 Suction Section 11 Suction Device 12 Hollow Section 13 Cutting Section
Claims (2)
載面の裏側に、少くとも周囲の一部がシール材によって
形成された中空部が設けられており、かつ該シール材の
表面の一部が封止されていないことを特徴とする樹脂封
止型半導体装置。1. A resin-encapsulated semiconductor device, wherein a hollow portion, at least a part of the periphery of which is formed by a sealing material, is provided on the back side of the semiconductor element mounting surface of an island on which a semiconductor element is fixedly mounted. A resin-sealed semiconductor device, wherein a part of the surface of the sealing material is not sealed.
を特徴とする請求項１記載の樹脂封止型半導体装置。2. The resin-encapsulated semiconductor device according to claim 1, wherein a part of the sealing material has a cut portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4098042A JPH05299536A (en) | 1992-04-17 | 1992-04-17 | Resin sealed semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4098042A JPH05299536A (en) | 1992-04-17 | 1992-04-17 | Resin sealed semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05299536A true JPH05299536A (en) | 1993-11-12 |
Family
ID=14209059
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4098042A Pending JPH05299536A (en) | 1992-04-17 | 1992-04-17 | Resin sealed semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05299536A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6410981B2 (en) | 1997-10-24 | 2002-06-25 | Nec Corporation | Vented semiconductor device package having separate substrate, strengthening ring and cap structures |
| US6664139B2 (en) * | 2000-06-16 | 2003-12-16 | Micron Technology, Inc. | Method and apparatus for packaging a microelectronic die |
| US6979595B1 (en) * | 2000-08-24 | 2005-12-27 | Micron Technology, Inc. | Packaged microelectronic devices with pressure release elements and methods for manufacturing and using such packaged microelectronic devices |
-
1992
- 1992-04-17 JP JP4098042A patent/JPH05299536A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6410981B2 (en) | 1997-10-24 | 2002-06-25 | Nec Corporation | Vented semiconductor device package having separate substrate, strengthening ring and cap structures |
| US6664139B2 (en) * | 2000-06-16 | 2003-12-16 | Micron Technology, Inc. | Method and apparatus for packaging a microelectronic die |
| US6979595B1 (en) * | 2000-08-24 | 2005-12-27 | Micron Technology, Inc. | Packaged microelectronic devices with pressure release elements and methods for manufacturing and using such packaged microelectronic devices |
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