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JPH05267264A - Manufacture of liquid-crystal display device - Google Patents

Manufacture of liquid-crystal display device

Info

Publication number
JPH05267264A
JPH05267264A JP6291392A JP6291392A JPH05267264A JP H05267264 A JPH05267264 A JP H05267264A JP 6291392 A JP6291392 A JP 6291392A JP 6291392 A JP6291392 A JP 6291392A JP H05267264 A JPH05267264 A JP H05267264A
Authority
JP
Japan
Prior art keywords
tft substrate
cleaning
tft
ultrasonic
crystal display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6291392A
Other languages
Japanese (ja)
Other versions
JP2871938B2 (en
Inventor
Yuji Tanaka
祐二 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Kagoshima Ltd
Original Assignee
NEC Kagoshima Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Kagoshima Ltd filed Critical NEC Kagoshima Ltd
Priority to JP6291392A priority Critical patent/JP2871938B2/en
Publication of JPH05267264A publication Critical patent/JPH05267264A/en
Application granted granted Critical
Publication of JP2871938B2 publication Critical patent/JP2871938B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

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  • Thin Film Transistor (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Liquid Crystal (AREA)
  • Cleaning By Liquid Or Steam (AREA)

Abstract

PURPOSE:To obtain a clean TFT element face by a method wherein a contamination which has adhered to the surface of a TFT substrate is removed with good efficiency. CONSTITUTION:A TFT element face 6 on a TFT substrate 1 is tilted toward an oscillator 5 with reference to the oscillator 5 which generates ultrasonic waves. The ultrasonic waves which are radiated from the oscillator 5 are impinged on the TFT element face 6 with good efficiency; a contamination is removed with good efficiency; the TFT element face 6 which is clean can be obtained.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は液晶表示装置の製造方法
に関し、特にTFT基板の超音波洗浄工程を含む液晶表
示装置の製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a liquid crystal display device, and more particularly to a method of manufacturing a liquid crystal display device including a step of ultrasonically cleaning a TFT substrate.

【0002】[0002]

【従来の技術】従来、TFT基板の洗浄は、図5に示す
よに、高い振動数を有する超音波(800〜1,200
kHz)振動子5が底面に設置された超音波洗浄槽4に
TFT基板1を収納したカセット2を入れ支持台3の上
に乗せて行われていた。この場合、TFT基板1は振動
子5に対し、垂直に設置されていた。洗浄装置の洗浄槽
は、複数槽並列に設置され、洗浄槽は、それぞれ水,ア
ルカリ,有機溶剤(フロン,IPA等)で満たされてい
る。
2. Description of the Related Art Conventionally, as shown in FIG. 5, cleaning of a TFT substrate requires ultrasonic waves (800 to 1,200) having a high frequency.
(KHz) Transducer 5 is placed in the ultrasonic cleaning tank 4 on the bottom surface of which the cassette 2 containing the TFT substrate 1 is placed and placed on the support 3. In this case, the TFT substrate 1 was installed vertically to the vibrator 5. A plurality of cleaning tanks of the cleaning device are installed in parallel, and the cleaning tanks are filled with water, an alkali, and an organic solvent (CFC, IPA, etc.), respectively.

【0003】超音洗浄は、超音波洗浄槽4の底面に設置
された振動子5より放射された超音波がTFT基板1上
へ達しTFT基板1上の粒子をゆり動かす事により除
去,洗浄される。超音波の周波数が800〜1,200
kHzと高いのは、低周波数(28〜40kHz)では
キャビテーションの発生によりTFT素子が破壊される
ためである。800〜1,200kHzの周波数ではキ
ャビテーションは、ほとんど発生せず、TFT素子は破
壊されない。
In the ultrasonic cleaning, ultrasonic waves emitted from a vibrator 5 installed on the bottom surface of an ultrasonic cleaning tank 4 reach the TFT substrate 1 and swing and move particles on the TFT substrate 1 to remove and clean them. It The frequency of ultrasonic waves is 800 to 1,200
The reason why it is as high as kHz is that the TFT element is destroyed due to the occurrence of cavitation at a low frequency (28 to 40 kHz). Cavitation hardly occurs at a frequency of 800 to 1,200 kHz, and the TFT element is not destroyed.

【0004】[0004]

【発明が解決しようとする課題】超音波は周波数が高く
なるに従って指向性が強くなる。指向性を示す指向性半
減角は、28kHzで41度,800kHzで1.3
度,1,000kHzで1.0度となる。従って、図5
に示すように、洗浄しようとするTFT基板1を超音波
振動子5と垂直に設置したのでは、TFT素子6面に超
音波がうまく照射されず、したがって、洗浄効果が小さ
いという欠点がある。
The directivity of ultrasonic waves becomes stronger as the frequency becomes higher. The directivity half-angle showing directivity is 41 degrees at 28 kHz and 1.3 at 800 kHz.
It becomes 1.0 degree at 1,000 kHz. Therefore, FIG.
As shown in FIG. 3, if the TFT substrate 1 to be cleaned is installed vertically to the ultrasonic transducer 5, the surface of the TFT element 6 is not well irradiated with ultrasonic waves, and therefore the cleaning effect is small.

【0005】本発明の目的は、洗浄効果の優れた洗浄工
程を含む液晶表示装置の製造方法を提供することにあ
る。
An object of the present invention is to provide a method of manufacturing a liquid crystal display device including a cleaning process having an excellent cleaning effect.

【0006】[0006]

【課題を解決するための手段】本発明は、800〜1,
200kHzの周波数の超音波にて超音波洗浄を行う工
程を含む液晶表示装置の製造方法において、カセットに
収納された複数のTFT基板をそれぞれの前記TFT基
板のTFT素子表面が隣の前記TFT基板の前記超音波
の影にならない角度に超音波振動子側へ傾け超音波洗浄
を行う工程を含む。
SUMMARY OF THE INVENTION The present invention is 800-1,
In a method of manufacturing a liquid crystal display device, which includes a step of ultrasonic cleaning with ultrasonic waves having a frequency of 200 kHz, a plurality of TFT substrates housed in a cassette are formed on a TFT element surface of an adjacent TFT substrate. The method includes a step of performing ultrasonic cleaning by inclining to an ultrasonic transducer side at an angle that does not shade the ultrasonic waves.

【0007】[0007]

【実施例】次に、本発明の実施例について図面を参照し
て説明する。
Embodiments of the present invention will now be described with reference to the drawings.

【0008】図1は本発明の第1の実施例の超音波洗浄
槽の断面図、図2は図1のTFT基板の傾きを説明する
部分拡大断面図である。
FIG. 1 is a sectional view of an ultrasonic cleaning tank according to a first embodiment of the present invention, and FIG. 2 is a partially enlarged sectional view for explaining the inclination of the TFT substrate of FIG.

【0009】第1の実施例は、図1に示すように、TF
T基板1のTFT素子面6が超音波振動子5の方向に向
くようにTFT基板1をθ度傾けて設置する。具体的に
は、超音波洗浄槽4の支持台3をθ度傾ける。これによ
り、支持台3に乗せたカセット2及びカセット2に収納
されたTFT基板1も振動子5に対しθ度傾く事にな
る。
In the first embodiment, as shown in FIG.
The TFT substrate 1 is installed at an angle of θ so that the TFT element surface 6 of the T substrate 1 faces the direction of the ultrasonic transducer 5. Specifically, the support base 3 of the ultrasonic cleaning tank 4 is tilted by θ degrees. As a result, the cassette 2 placed on the support base 3 and the TFT substrate 1 housed in the cassette 2 are also inclined by θ degrees with respect to the vibrator 5.

【0010】ここで、図2に示すように、傾き角θを大
きくするとTFT基板1aの上部が隣りのTFT基板1
bの影になり、超音波が照射されず、洗浄効果は逆に落
ちることになる。従って、TFT基板1aの長さをl,
TFT基板1a,1b間の距離をaとした場合、振動子
5よりの垂線がTFT基板1bの下端とTFT基板1a
の上端に接する時の角度θ=tan-1(a/l)前後が
適当となる。
Here, as shown in FIG. 2, when the tilt angle θ is increased, the upper portion of the TFT substrate 1a is adjacent to the adjacent TFT substrate 1.
The shadow of b is generated, ultrasonic waves are not irradiated, and the cleaning effect is adversely affected. Therefore, if the length of the TFT substrate 1a is 1,
When the distance between the TFT substrates 1a and 1b is a, the perpendicular line from the vibrator 5 is the lower end of the TFT substrate 1b and the TFT substrate 1a.
An angle of about θ = tan −1 (a / l) when touching the upper end of is appropriate.

【0011】図3は本発明の第1の実施例の洗浄方法を
説明する洗浄装置の概略構成図である。
FIG. 3 is a schematic configuration diagram of a cleaning apparatus for explaining the cleaning method of the first embodiment of the present invention.

【0012】第1の実施例は、図3に示すように、TF
T基板1を収納したカセット2がローダ7より供給させ
ると、搬送ロボット13により、まず、アルカリ槽8へ
浸漬される。ここで有機汚れを除去したあと搬送ロボッ
ト13でリンス槽9へ移されTFT基板1に付着したア
ルカリが除去される。
In the first embodiment, as shown in FIG.
When the cassette 2 accommodating the T substrate 1 is supplied from the loader 7, it is first immersed in the alkaline tank 8 by the transfer robot 13. After the organic dirt is removed here, the transfer robot 13 moves the rinse tank 9 to remove the alkali adhering to the TFT substrate 1.

【0013】次に、超音波洗浄槽4へ移され粒子状の汚
れを除去し、次いで、高速排水リンス槽10で洗浄さ
れ、最後に、温純水引き上げ乾燥槽11で乾燥されアン
ローダ12へ搬送される。リンス槽9,超音波洗浄槽
4,高速排水リンス槽10はすべて純水で満たされてい
る。
Next, the particles are transferred to the ultrasonic cleaning tank 4 to remove particulate dirt, then washed in the high-speed drainage rinse tank 10, and finally dried in the hot pure water pulling and drying tank 11 and conveyed to the unloader 12. .. The rinse tank 9, the ultrasonic cleaning tank 4, and the high-speed drainage rinse tank 10 are all filled with pure water.

【0014】このような構成を有する洗浄装置において
TFT基板1の洗浄を行なう。
The cleaning of the TFT substrate 1 is performed in the cleaning device having such a structure.

【0015】ここで、図2に示すl=350mm(幅3
00mm),a=7mm,θ=0度(従来例)及び1度
の条件で洗浄を行なった結果、3μm以上の粒子の除去
数は θ=0度で10個(従来例) θ=1度で62個 であり、TFT基板1を超音波振動子5の方へ傾ける事
により粒子(汚れ)が効率よく除去された。
Here, l = 350 mm (width 3 shown in FIG. 2
00 mm), a = 7 mm, θ = 0 degree (conventional example), and as a result of cleaning under conditions of 1 degree, the number of particles of 3 μm or more removed is 10 at θ = 0 degree (conventional example) θ = 1 degree The number was 62 and the particles (dirt) were efficiently removed by tilting the TFT substrate 1 toward the ultrasonic vibrator 5.

【0016】図4は本発明の第2の実施例を説明する超
音波洗浄槽の断面図である。
FIG. 4 is a sectional view of an ultrasonic cleaning tank for explaining the second embodiment of the present invention.

【0017】超音波洗浄においては定在波の発生により
洗浄むらが生じる(定在波のピッチλ/2は水中25℃
で800kHzの場合1mm,1,000kHzの場合
0.7mm)。第2の実施例は、この洗浄むらを防止す
るため、図4に示すように、揺動機構を付けた例であ
る。
In ultrasonic cleaning, uneven cleaning occurs due to the occurrence of standing waves (the standing wave pitch λ / 2 is 25 ° C. in water).
At 800 kHz, 1 mm, and at 1,000 kHz, 0.7 mm). The second embodiment is an example in which a swinging mechanism is attached as shown in FIG. 4 in order to prevent the uneven cleaning.

【0018】カセット2が置かれた支持台3は揺動用カ
ム14に接しており揺動用カム14の回転に伴い上下動
する。従ってTFT基板1も上下動する。ここで、上下
動の距離は、定在波のピッチλ/2以上にする。
The support base 3 on which the cassette 2 is placed is in contact with the swing cam 14 and moves up and down as the swing cam 14 rotates. Therefore, the TFT substrate 1 also moves up and down. Here, the vertical movement distance is set to a pitch of the standing wave λ / 2 or more.

【0019】この結果第1の実施例と同じ条件で粒子の
除去数は、 θ=1度で105個 となり、第1の実施例より効率よく除去されていること
が確認できた。
As a result, under the same conditions as in the first embodiment, the number of particles removed was 105 at θ = 1 degree, and it was confirmed that the particles were removed more efficiently than in the first embodiment.

【0020】[0020]

【発明の効果】以上説明したように本発明は、TFT基
板1のTFTの素子面6を振動子5方向へ傾ける事によ
り、超音波がTFT素子面6に効率よく照射され、従っ
て、付着した粒子(汚れ)が効率よく除去され、清浄な
TFT素子面6が得られるという効果を有する。
As described above, according to the present invention, by inclining the element surface 6 of the TFT of the TFT substrate 1 toward the vibrator 5, ultrasonic waves are efficiently irradiated to the TFT element surface 6 and thus adhered. This has the effect that particles (dirt) are efficiently removed and a clean TFT element surface 6 is obtained.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の第1の実施例の超音波洗浄槽の断面図
である。
FIG. 1 is a sectional view of an ultrasonic cleaning tank according to a first embodiment of the present invention.

【図2】図1のTFT基板の傾きを説明する部分拡大断
面図である。
FIG. 2 is a partially enlarged cross-sectional view illustrating an inclination of the TFT substrate of FIG.

【図3】本発明の第1の実施例の洗浄方法を説明する洗
浄装置の概略構成図である。
FIG. 3 is a schematic configuration diagram of a cleaning device for explaining a cleaning method according to a first embodiment of the present invention.

【図4】本発明の第2の実施例の超音波洗浄槽の断面図
である。
FIG. 4 is a sectional view of an ultrasonic cleaning tank according to a second embodiment of the present invention.

【図5】従来の超音波洗浄槽の一例の断面図である。FIG. 5 is a sectional view of an example of a conventional ultrasonic cleaning tank.

【符号の説明】[Explanation of symbols]

1,1a,1b TFT基板 2 カセット 3 支持台 4 超音波洗浄槽 5 振動子 6 TFT素子面 7 ローダ 8 アルカリ槽 9 リンス槽 10 高速排水リンス槽 11 温純水引き上げ乾燥槽 12 アンローダ 13 搬送ロボット 14 揺動用カム 1, 1a, 1b TFT substrate 2 Cassette 3 Support 4 Ultrasonic cleaning tank 5 Transducer 6 TFT element surface 7 Loader 8 Alkali tank 9 Rinsing tank 10 High-speed drainage rinse tank 11 Hot deionized water drying tank 12 Unloader 13 Transfer robot 14 Swing cam

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 800〜1,200kHzの周波数の超
音波にて超音波洗浄を行う工程を含む液晶表示装置の製
造方法において、カセットに収納された複数のTFT基
板をそれぞれの前記TFT基板のTFT素子表面が隣の
前記TFT基板の前記超音波の影にならない角度に超音
波振動子側へ傾け超音波洗浄を行う工程を含むことを特
徴とする液晶表示装置の製造方法。
1. A method of manufacturing a liquid crystal display device, which comprises a step of ultrasonic cleaning with ultrasonic waves having a frequency of 800 to 1,200 kHz, wherein a plurality of TFT substrates housed in a cassette are provided on each of the TFT substrates. A method for manufacturing a liquid crystal display device, comprising the step of performing ultrasonic cleaning by inclining the element surface toward the ultrasonic transducer side at an angle that does not shade the ultrasonic waves of the adjacent TFT substrate.
JP6291392A 1992-03-19 1992-03-19 Manufacturing method of liquid crystal display device Expired - Fee Related JP2871938B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6291392A JP2871938B2 (en) 1992-03-19 1992-03-19 Manufacturing method of liquid crystal display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6291392A JP2871938B2 (en) 1992-03-19 1992-03-19 Manufacturing method of liquid crystal display device

Publications (2)

Publication Number Publication Date
JPH05267264A true JPH05267264A (en) 1993-10-15
JP2871938B2 JP2871938B2 (en) 1999-03-17

Family

ID=13213974

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6291392A Expired - Fee Related JP2871938B2 (en) 1992-03-19 1992-03-19 Manufacturing method of liquid crystal display device

Country Status (1)

Country Link
JP (1) JP2871938B2 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001060573A (en) * 1999-04-27 2001-03-06 Applied Materials Inc Semiconductor substrate cleaning system
JP2008046391A (en) * 2006-08-17 2008-02-28 Seiko Epson Corp Alloy separation and recovery method
JP2014517155A (en) * 2011-06-24 2014-07-17 エーシーエム リサーチ (シャンハイ) インコーポレーテッド Method and apparatus for forming a uniform metal film on a substrate
WO2015162892A1 (en) * 2014-04-22 2015-10-29 株式会社Joled Method for manufacturing organic el display panel and system for manufacturing organic el display panels
JP2016210018A (en) * 2015-04-30 2016-12-15 富士ゼロックス株式会社 Cleaning device and droplet discharge device
JP2020147841A (en) * 2019-03-16 2020-09-17 株式会社不二越 Vacuum degrease washing method and vacuum degrease washing station

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001060573A (en) * 1999-04-27 2001-03-06 Applied Materials Inc Semiconductor substrate cleaning system
JP2010010718A (en) * 1999-04-27 2010-01-14 Applied Materials Inc Semiconductor substrate cleaning system
JP2008046391A (en) * 2006-08-17 2008-02-28 Seiko Epson Corp Alloy separation and recovery method
JP2014517155A (en) * 2011-06-24 2014-07-17 エーシーエム リサーチ (シャンハイ) インコーポレーテッド Method and apparatus for forming a uniform metal film on a substrate
US9666426B2 (en) 2011-06-24 2017-05-30 Acm Research (Shanghai) Inc. Methods and apparatus for uniformly metallization on substrates
WO2015162892A1 (en) * 2014-04-22 2015-10-29 株式会社Joled Method for manufacturing organic el display panel and system for manufacturing organic el display panels
JP2016210018A (en) * 2015-04-30 2016-12-15 富士ゼロックス株式会社 Cleaning device and droplet discharge device
JP2020147841A (en) * 2019-03-16 2020-09-17 株式会社不二越 Vacuum degrease washing method and vacuum degrease washing station

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