JPH05194770A - Surface-coated plastic article - Google Patents
Surface-coated plastic articleInfo
- Publication number
- JPH05194770A JPH05194770A JP4006839A JP683992A JPH05194770A JP H05194770 A JPH05194770 A JP H05194770A JP 4006839 A JP4006839 A JP 4006839A JP 683992 A JP683992 A JP 683992A JP H05194770 A JPH05194770 A JP H05194770A
- Authority
- JP
- Japan
- Prior art keywords
- film
- plasma
- layer
- substrate
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Coating Of Shaped Articles Made Of Macromolecular Substances (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Laminated Bodies (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、表面に硬質被覆が形成
されることにより耐擦傷性、耐摩耗性、耐薬品性、帯電
特性などに優れ、各種光学材料、光記録材料、窓ガラス
等として用いて好適なプラスチックス製品に関する。FIELD OF THE INVENTION The present invention has excellent scratch resistance, abrasion resistance, chemical resistance, charging characteristics and the like due to the formation of a hard coating on the surface thereof, and various optical materials, optical recording materials, window glass, etc. A plastic product suitable for use as
【0002】[0002]
【従来の技術】プラスチックス製品、とりわけポリカー
ボネート、ポリメチルメタクリレート等の透明なプラス
チックス材料より成る成形物は、車両、船舶、航空機建
築等の分野において装飾用或いは無機ガラス代替材料と
して、またその透明性を生かしプラスチックス製ミラ
ー、レンズ、その他各種光学材料や光記録材料等として
広く用いられるようになってきている。2. Description of the Related Art Plastic products, particularly molded products made of transparent plastic materials such as polycarbonate and polymethylmethacrylate, are used as decorative or inorganic glass substitute materials in the fields of vehicles, ships, aircraft construction, etc. It has come to be widely used as a plastic mirror, a lens, various optical materials, optical recording materials, and the like by taking advantage of the properties.
【0003】ところで、一般にプラスチックス材料は、
表面が傷つき易く、前記透明なプラスチックス材料は傷
による美観の低下や透明性の低下を防止するために、そ
の表面にハードコート処理、すなわち硬度の高い透明コ
ートが行われている。これらのハードコートを施す手法
には大別して2つの方法が知られている。1つは真空蒸
着法、スパッタリング法、プラズマCVD法、プラズマ
重合法等に代表されるドライコート法である。もう一つ
は、溶液塗布後、熱硬化或いは光硬化させるウェットコ
ート法で、有機系(メラミン樹脂系、ウレタン樹脂系、
アルキド樹脂系、UV硬化アクリレート系等)とシリコ
ン系(オルガノシロキサン系)のものがある。Generally, plastic materials are
The surface is easily scratched, and the transparent plastics material is subjected to a hard coat treatment, that is, a transparent coating having a high hardness, in order to prevent deterioration of aesthetics and transparency due to scratches. There are roughly two known methods for applying these hard coats. One is a dry coating method typified by a vacuum vapor deposition method, a sputtering method, a plasma CVD method, a plasma polymerization method and the like. The other is a wet coating method in which the solution is applied and then heat-cured or photo-cured, and organic (melamine resin-based, urethane resin-based,
There are alkyd resins, UV-curable acrylates, etc.) and silicones (organosiloxanes).
【0004】スパッタリング法においては膜自体に十分
な硬度を賦与する事が可能であるが、固有応力が大きい
ため厚膜化すると十分な接着強度を得る事ができず、ま
た膜厚が薄いと、基材であるプラスチックス表面硬度の
影響を受けるため、膜自体の硬度が高くても傷つきを防
止できる機能に劣る。プラズマ重合法やプラズマCVD
法においては、成膜条件によってはプラスチックス表面
にかなり密着性の良い膜を得る事が可能であるが、膜の
硬度や緻密性等膜質においてスパッター法に劣る。In the sputtering method, it is possible to impart sufficient hardness to the film itself, but since the intrinsic stress is large, it is not possible to obtain sufficient adhesive strength if the film is made thick, and if the film thickness is thin, Since the surface of the plastics, which is the base material, is affected by the hardness of the film, even if the hardness of the film itself is high, the function of preventing scratches is poor. Plasma polymerization method and plasma CVD
According to the method, it is possible to obtain a film having excellent adhesion to the surface of plastics depending on the film forming conditions, but it is inferior to the sputtering method in film quality such as hardness and denseness.
【0005】真空蒸着法においては、元素組成比をコン
トロールしSiO2組成とする事が難しい事、スパッタ
ー法に比べ膜の緻密性やプラスチックス表面に対する接
着性に劣る等の問題がある。一方ウエット法においては
膜の固有応力は小さく、プラスチックス表面に対する接
着性は良いが、膜密度が低く、従来用いられていたガラ
スに比較すると耐擦傷性において劣り、例えば自動車の
昇降式ガラス窓での使用は、実用上十分なものではなか
った。In the vacuum deposition method, there are problems that it is difficult to control the element composition ratio to obtain a SiO 2 composition, and that the film density and the adhesiveness to the plastics surface are inferior to the sputtering method. On the other hand, in the wet method, the intrinsic stress of the film is small and the adhesiveness to the plastic surface is good, but the film density is low and the scratch resistance is inferior to the conventionally used glass. The use of was not practically sufficient.
【0006】これら各種成膜法における短所を補うため
に、二つ以上の成膜法を組み合わせる事によって、膜の
接着性や耐擦傷性を改善する試みも行われている。特開
昭60−238331号公報には、活性エネルギー線照
射処理架橋性樹脂皮膜によるハードコート処理を施した
プラスチックス成形品に、架橋構造を有するプラズマ重
合膜を成膜する方法が提案されている。また、特開昭6
3−81033号公報には、プラスチックス成形品に無
機酸化物微粒子を含む熱硬化性有機ポリマー膜を介して
SiO2からなる被膜を真空蒸着法等ドライ法にて成膜
する方法が提案されている。In order to make up for the disadvantages of these various film forming methods, attempts have been made to improve the adhesiveness and scratch resistance of the film by combining two or more film forming methods. Japanese Unexamined Patent Publication No. 60-238331 proposes a method of forming a plasma polymerized film having a crosslinked structure on a plastics molded product which has been hard-coated with a crosslinkable resin film which has been subjected to an active energy ray irradiation treatment. .. In addition, JP-A-6
Japanese Patent Application Laid-Open No. 3-81033 proposes a method of forming a coating film made of SiO 2 on a plastic molded product through a thermosetting organic polymer film containing fine particles of inorganic oxide by a dry method such as a vacuum deposition method. There is.
【0007】[0007]
【発明が解決しようとする課題】しかしながら、活性エ
ネルギー線照射処理架橋性樹脂被膜によるハードコート
処理を施したプラスチックス成形品に、架橋構造を有す
るプラズマ重合膜を成膜する方法においては、プラズマ
重合膜はスパッター膜に比べ固有応力が小さく接着性に
優れるものの、膜硬度、緻密さ等において劣り、その為
耐擦傷性や耐摩耗性に劣る。また、プラスチックス成形
品に熱硬化性有機ポリマー膜を介してSiO2からなる
被膜を真空蒸着法等ドライ法にて成膜する方法において
は、プラスチックス成形品に熱硬化性有機ポリマー膜を
被覆する場合、十分な接着性を賦与するためには、その
成膜プロセスは通常2〜3時間のプロセス時間を要し、
しかもそのプロセス管理は大変きびしい。この為、さら
にドライプロセスによる成膜工程を追加する場合、総コ
ストは著しく上昇し製品の対象は極めて限定された物と
なる。その上、一貫したドライ法による成膜プロセスに
比べ膜同志の間の接着性に劣り、実用的でない。However, in the method of forming a plasma-polymerized film having a crosslinked structure on a plastics molded article which has been hard-coated with a crosslinkable resin film which has been subjected to an active energy ray irradiation treatment, plasma polymerization is used. Although the film has smaller specific stress and better adhesion than a sputtered film, it is inferior in film hardness, denseness, etc., and therefore inferior in scratch resistance and abrasion resistance. In addition, in a method of forming a film made of SiO 2 on a plastic molded product through a thermosetting organic polymer film by a dry method such as a vacuum deposition method, the plastic molded product is coated with the thermosetting organic polymer film. In that case, the film forming process usually requires a process time of 2 to 3 hours in order to impart sufficient adhesiveness,
Moreover, the process management is very severe. For this reason, when a film forming step by a dry process is further added, the total cost is significantly increased, and the object of the product is extremely limited. Moreover, the adhesiveness between the films is inferior to the film formation process by the consistent dry method, which is not practical.
【0008】[0008]
【課題を解決するための手段】本発明者等は、前記課題
を解決するため鋭意検討を行ったところ、特殊の多層被
膜を形成することにより問題を解決し得ることを見出
し、本発明に到達した。すなわち、本発明の要旨は、表
面に下記A被膜及びB被膜がこの順に積層されてなる表
面被覆プラスチックス製品。 A被膜:珪素化合物のプラズマ重合により形成され、膜
厚が0.1μm〜10μmであり、含有される炭素と珪
素の原子数比が0.1〜3の範囲にあるプラズマ重合被
膜。 B被膜:膜厚が0.1μm〜3μmのSiOx(x=
1.5〜2.0)からなる被膜にある。Means for Solving the Problems The inventors of the present invention have made extensive studies to solve the above problems, and have found that the problems can be solved by forming a special multi-layer coating, and arrived at the present invention. did. That is, the gist of the present invention is a surface-coated plastic product in which the following A film and B film are laminated in this order on the surface. A film: A plasma polymerization film formed by plasma polymerization of a silicon compound, having a film thickness of 0.1 μm to 10 μm, and having an atomic ratio of contained carbon to silicon in the range of 0.1 to 3. B coating: SiOx (x = x = 3 μm in thickness)
1.5-2.0).
【0009】本発明は、先ずプラスチックス製品の表面
に前記A被膜を設けてなる物であるが、ここでA被膜と
しては含有される炭素と珪素の原子数比が0.1〜3の
範囲にある事が必要である。すなわち、含有される炭素
と珪素の原子数比が0.1に満たないとA被膜とプラス
チックス表面の間の十分な接着強度が得られず、また含
有される炭素と珪素の原子数比が3を超えるとA被膜と
B被膜の間の十分な接着強度が得られず好ましくない。The present invention is a product in which the above A film is provided on the surface of a plastic product, and the atomic ratio of carbon to silicon contained in the A film is in the range of 0.1 to 3. It is necessary to be in. That is, if the atomic ratio of carbon and silicon contained is less than 0.1, sufficient adhesive strength between the A coating and the surface of the plastic cannot be obtained, and the atomic ratio of carbon and silicon contained is not sufficient. When it exceeds 3, sufficient adhesive strength between the A coating and the B coating cannot be obtained, which is not preferable.
【0010】本発明で用い得る珪素化合物としては、好
ましくは、炭素原子を含む珪素化合物または、炭素原子
と酸素原子または窒素原子を含む珪素化合物であり、具
体的化合物としては例えば1,1,3,3−テトラメチ
ルジシロキサン、1,1,3,3−テトラメチルジシラ
ザン、ペンタメチルジシロキサン、ヘキサメチルジシロ
キサン、ヘキサメチルジシラザン、ヘプタメチルジシラ
ザン、1,3−ジメトキシテトラメチルジシロキサン、
1,3−ジエトキシテトラメチルジシロキサン、ヘキサ
メチルシクロトリシロキサン、ヘキサメチルシクロトリ
シラザン、1,1,3,3,5,5,−ヘキサメチルト
リシロキサン、1,1,1,3,5,5,5−ヘプタメ
チルトリシロキサン、オクタメチルトリシロキサン、
1,3,5,7−テトラメチルシクロテトラシロキサ
ン、オクタメチルシクロテトラシロキサン、1,1,
1,3,5,7,7,7−オクタメチルテトラシロキサ
ン、1,1,3,3,5,5,7,7−オクタメチルシ
クロテトラシラザン、トリス(トリメチルシロキシ)シ
ラン、デカメチルテトラシロキサン等、域いは下記一般
式(I)The silicon compound which can be used in the present invention is preferably a silicon compound containing a carbon atom or a silicon compound containing a carbon atom and an oxygen atom or a nitrogen atom, and specific compounds include, for example, 1,1,3. , 3-tetramethyldisiloxane, 1,1,3,3-tetramethyldisilazane, pentamethyldisiloxane, hexamethyldisiloxane, hexamethyldisilazane, heptamethyldisilazane, 1,3-dimethoxytetramethyldisiloxane ,
1,3-diethoxytetramethyldisiloxane, hexamethylcyclotrisiloxane, hexamethylcyclotrisilazane, 1,1,3,3,5,5-hexamethyltrisiloxane, 1,1,1,3,5 , 5,5-heptamethyltrisiloxane, octamethyltrisiloxane,
1,3,5,7-tetramethylcyclotetrasiloxane, octamethylcyclotetrasiloxane, 1,1,
1,3,5,7,7,7-octamethyltetrasiloxane, 1,1,3,3,5,5,7,7-octamethylcyclotetrasilazane, tris (trimethylsiloxy) silane, decamethyltetrasiloxane Etc., the following general formula (I)
【0011】[0011]
【化1】R1nSiR2 4-n (I) で表される様なものである。式中R1はアルキル基、ア
ルケニル基、アリール基、ハロゲン基、アミノ基、メル
カプト基、シアノ基、イソシアノ基、ビニル基、メタク
リロキシ基、エポキシ基、グリシドキシ基を有する炭化
水素基から選ばれる1種もしくは2種以上であり、塩素
及びフッ素原子を含んでいてもかまわない。R2は水素
原子、アルコキシ基、アルコキシアルコキシ基、フェノ
キシ基、アセトキシ基及び塩素原子から選ばれる1種も
しくは2種以上でありnは0〜4である。具体例として
は、メチルトリクロロシラン、ジメチルジクロロシラ
ン、トリメチルクロロシラン、メチルシラン、ジメチル
シラン、トリメチルシラン、テトラメチルシラン、テト
ラメトキシシラン、メチルトリメトキシシラン、ジメチ
ルジメトキシシラン、トリメチルメトキシシラン、テト
ラエトキシシラン、メチルトリエトキシシラン、ジメチ
ルジエトキシシラン、トリメチルエトキシシラン等その
他多数の化合物を挙げる事ができる。これら珪素化合物
は単独で用いても2種以上を併用して用いても良い。こ
れら化合物のプラズマ重合は気相状態において実施する
ため常温で気化しやすい化合物が望ましいが、加熱によ
り初めて気化しやすくなる化合物でも、化合物および重
合装置を適度に加熱する事により用いる事ができる。膜
中酸素含有量を増やすために、これらの原料に酸素源と
してO2やN2O等を混合させても良い。## STR1 ## This is represented by R 1 nSiR 2 4-n (I). In the formula, R 1 is one selected from an alkyl group, an alkenyl group, an aryl group, a halogen group, an amino group, a mercapto group, a cyano group, an isocyano group, a vinyl group, a methacryloxy group, an epoxy group and a hydrocarbon group having a glycidoxy group. Alternatively, they may be two or more and may contain chlorine and fluorine atoms. R 2 is one or more selected from a hydrogen atom, an alkoxy group, an alkoxyalkoxy group, a phenoxy group, an acetoxy group and a chlorine atom, and n is 0 to 4. Specific examples include methyltrichlorosilane, dimethyldichlorosilane, trimethylchlorosilane, methylsilane, dimethylsilane, trimethylsilane, tetramethylsilane, tetramethoxysilane, methyltrimethoxysilane, dimethyldimethoxysilane, trimethylmethoxysilane, tetraethoxysilane, and methyl. Many other compounds such as triethoxysilane, dimethyldiethoxysilane and trimethylethoxysilane can be mentioned. These silicon compounds may be used alone or in combination of two or more. Since plasma polymerization of these compounds is carried out in a gas phase, compounds that are easily vaporized at room temperature are desirable, but compounds that are easily vaporized only by heating can be used by appropriately heating the compound and the polymerization apparatus. In order to increase the oxygen content in the film, these raw materials may be mixed with O 2 or N 2 O as an oxygen source.
【0012】A被膜上にB被膜を成膜する前に、A被膜
表面をO2やN2Oガスプラズマにより表面処理する事が
望ましい。処理条件に関しては、使用するモノマー、プ
ラズマ重合条件等により最適条件が異なり、個々の成膜
品につき実験的に決められるべきである。B被膜である
SiOx(x=1.5〜2)の形成方法としてはスパッ
タリング法かプラズマCVD法が好ましいが、スパッタ
リング法が特に好ましい。Before forming the B coating on the A coating, it is desirable that the surface of the A coating be surface-treated with O 2 or N 2 O gas plasma. Regarding the processing conditions, the optimum conditions differ depending on the monomers used, plasma polymerization conditions, etc., and should be determined experimentally for each film-formed product. As a method for forming the SiOx (x = 1.5 to 2) which is the B film, a sputtering method or a plasma CVD method is preferable, but a sputtering method is particularly preferable.
【0013】珪素化合物のプラズマ重合によりプラズマ
重合膜を形成したプラスチックス製品にスパッターSi
Ox(x=1.5〜2)膜を形成せしめる場合、形成さ
れる高硬度のスパッターSiOx(x=1.5〜2)被
膜はプラズマ重合膜上に強固に結合し、しかもプラズマ
重合膜を介して基材であるプラスチックスに結合してい
る。この為、スパッターSiOx膜の大きな応力が直接
プラスチックス基板にかかることがないので、スパッタ
ーSiOx(x=1.5〜2)膜の接着性を格段に向上
し得る。プラズマ重合膜の厚さとしては、0.1μm〜
10μm、好ましくは0.5μm〜5μmである。0.
5μm以下の場合には、プラズマ重合膜上にSiO(x
=1.5〜2)スパッター膜を形成せしめた場合に十分
な接着性を得る事ができず、また5μmを超えるとクラ
ックが生じ易くなる。SiOx(x=1.5〜2)スパ
ッター膜の厚さとしては、0.1μm〜3μm、好まし
くは0.2μm〜1μmである。0.2μm以下の場合
には、十分な耐擦傷性を得る事ができず、また1μmを
超えるとクラックが生じ易くなる。A plastic product having a plasma polymerized film formed by plasma polymerization of a silicon compound is sputtered with Si.
When forming an Ox (x = 1.5 to 2) film, the formed high-hardness sputtered SiOx (x = 1.5 to 2) film is firmly bonded to the plasma polymerized film, and the plasma polymerized film is formed. It is bonded to the plastics which is the base material through. Therefore, the large stress of the sputtered SiOx film is not directly applied to the plastics substrate, so that the adhesiveness of the sputtered SiOx (x = 1.5 to 2) film can be remarkably improved. The thickness of the plasma polymerized film is from 0.1 μm to
It is 10 μm, preferably 0.5 μm to 5 μm. 0.
When the thickness is 5 μm or less, SiO (x
= 1.5 to 2) When a sputtered film is formed, sufficient adhesiveness cannot be obtained, and when it exceeds 5 μm, cracks are likely to occur. The thickness of the SiOx (x = 1.5 to 2) sputtered film is 0.1 μm to 3 μm, preferably 0.2 μm to 1 μm. If it is 0.2 μm or less, sufficient scratch resistance cannot be obtained, and if it exceeds 1 μm, cracks are likely to occur.
【0014】[0014]
【実施例】本発明を実施例により具体的に説明するが、
本発明は以下の実施例に限定されるものではない。EXAMPLES The present invention will be described in detail with reference to Examples.
The present invention is not limited to the examples below.
【0015】実施例1 ポリカーボネート樹脂基板(筒中プラスチックス工業
(株)製)を平行平板型プラズマ重合装置内のカソード
上にセットし、減圧下、テトラエトキシシランガスとN
2Oガスを1対2のモル比で通気しながら圧力を650
mTorrに調節保持し、110KHz、0.5W/c
m2の低周波電力を与えて放電させることによりプラズ
マを発生させ、基板表面を60分間プラズマ処理し、プ
ラズマ重合膜を有するポリカーボネート樹脂基板を得
た。プラズマ重合中、基板温度を50℃程度に保持した
(ここで言う基板温度とは基板を置いたカソード面の温
度であり、以下プラズマ重合における基板温度とはすべ
てこの温度を意味するものとする)。これをRFプレー
ナーマグネトロン型スパッター装置(日本真空技術
(株)製SMH−2306)内にセットし、SiO2を
ターゲットとし、Arガス雰囲気10mTorr、10
00Wにて20分間RF(13.56MHz)スパッタ
ーを行なった。スパッター中、基板温度を95℃程度に
保持した(ここで言う基板温度とは基板を保持する面の
温度であり、以下スパッタリングにおける基板温度とは
すべてこの温度を意味するものとする)。得られた表面
処理基板について次の様な特性試験を行いその結果を表
1に示した。Example 1 A polycarbonate resin substrate (manufactured by Tsutsunaka Plastics Co., Ltd.) was set on the cathode in a parallel plate type plasma polymerization apparatus, and tetraethoxysilane gas and N 2 were added under reduced pressure.
The pressure was increased to 650 while aeration with 2 O gas at a molar ratio of 1: 2.
Adjust and hold at mTorr, 110KHz, 0.5W / c
Plasma was generated by applying a low-frequency power of m 2 to discharge, and the substrate surface was plasma-treated for 60 minutes to obtain a polycarbonate resin substrate having a plasma polymerized film. The substrate temperature was maintained at about 50 ° C. during the plasma polymerization (the substrate temperature here is the temperature of the cathode surface on which the substrate is placed, and hereinafter the substrate temperature in the plasma polymerization shall mean this temperature). .. This was set in an RF planar magnetron type sputtering device (SMH-2306 manufactured by Nippon Vacuum Technology Co., Ltd.), SiO 2 was used as a target, and an Ar gas atmosphere was set to 10 mTorr and 10 mTorr.
RF (13.56 MHz) sputtering was performed at 00 W for 20 minutes. The substrate temperature was kept at about 95 ° C. in the sputter (the substrate temperature here is the temperature of the surface holding the substrate, and hereinafter the substrate temperature in sputtering means this temperature). The following characteristic test was conducted on the obtained surface-treated substrate, and the results are shown in Table 1.
【0016】特性試験項目及び方法 1. 膜の初期密着性 クロスカット密着性試験を行った。ここで言うクロスカ
ット密着性試験とは、先ずスパッター膜および/または
プラズマ重合膜被覆面に鋼ナイフにて1mm間隔で基板
に達する基盤目を入れ、次セロテープ(ニチバン(株)
製、巾24mm)を良く密着させ、90℃方向に急速に
引き剥し剥離の有無を見る試験方法である。各サンプル
につき試験を行い、剥離しなかった枚数を示した。 2. 耐擦傷性 (1)スチールウール耐擦傷性 #000番スチールウールで表面処理基板表面を摩擦
し、 ○−強くこすっても傷が付かない △−強くこするとわずか傷が付く ×−強くこすっても傷が付く と表示した。 (2)テーバー摩耗試験 ASTM D1044に従い、摩耗輪CS−10F、荷
重500gにて試験を行い摩耗回数500回で試験前後
の△Hazeを測定した。ここで△Hazeの定義は △Haze=試験後のHaze−試験前のHazeであ
る。 3. 耐侯性試験 ウエザーメーター(スガ社製WE−SUN−HC)を用
いJIS A1415に従い120時間試験後、クロス
カット試験による密着性試験を行った。表には剥離しな
かった枚数を示した。 実施例2Characteristic test items and method 1. Initial adhesion of film A cross-cut adhesion test was performed. The cross-cut adhesion test referred to here is that a sputtered film and / or plasma polymerized film coated surface is first laid with a steel knife so as to reach the substrate at 1 mm intervals, and the next cellophane tape (Nichiban Co., Ltd.)
It is a test method in which a product made in a width of 24 mm) is closely adhered, and the film is rapidly peeled in the direction of 90 ° C. to see the presence or absence of peeling. Each sample was tested and the number of sheets that did not peel was shown. 2. Scratch resistance (1) Scratch resistance of steel wool Surface treatment with # 000 steel wool Rubbing the surface of the substrate, ○ -No scratch even with strong rubbing △ -Slight scratch with rubbing strongly × -Even with strong rubbing It was displayed that it was scratched. (2) Taber Abrasion Test According to ASTM D1044, a test was conducted with a wear wheel CS-10F and a load of 500 g, and ΔHaze before and after the test was measured after 500 abrasion cycles. Here, the definition of ΔHaze is ΔHaze = Haze after the test−Haze before the test. 3. Weather resistance test After a 120 hour test according to JIS A1415 using a weather meter (WE-SUN-HC manufactured by Suga Co., Ltd.), an adhesion test by a cross cut test was performed. The number of sheets that did not peel is shown in the table. Example 2
【0017】実施例1と同じ基板及びプラズマ重合装置
を用い減圧下、ヘキサメチルジシロキサンガスとN2O
ガスを1対2のモル比で通気しながら圧力を150mT
orrに調節保持し、110KHz、0.5W/cm2
に低周波電力を与えて放電させることによりプラズマを
発生させ、基板表面を60分間プラズマ処理し、プラズ
マ重合膜を有するポリカーボネート樹脂基板を得た。引
続き同装置内にて減圧下N2Oガスのみ通気しながら圧
力を250mTorrに調節保持し、110KHz、
0.25W/cm2に低周波電力を与えて放電させるこ
とによりプラズマを発生させ、基板表面を3分間プラズ
マ処理した。プラズマ重合、及びN2Oガスによるプラ
ズマ処理中、基板温度50℃程度に保持した。これに実
施例1と同装置を用い同条件にてスパッター膜を形成し
た。特性試験の結果を表1に示した。Using the same substrate and plasma polymerization apparatus as in Example 1, under reduced pressure, hexamethyldisiloxane gas and N 2 O were used.
The pressure is 150 mT while aerating gas at a molar ratio of 1: 2.
Adjust and hold at orr, 110KHz, 0.5W / cm 2
Plasma was generated by applying low-frequency power to and discharging the plasma to subject the substrate surface to plasma treatment for 60 minutes to obtain a polycarbonate resin substrate having a plasma polymerized film. Subsequently, the pressure was adjusted to 250 mTorr while maintaining the pressure at 250 mTorr while ventilating only N 2 O gas under reduced pressure in the same device.
Plasma was generated by applying a low frequency power of 0.25 W / cm 2 to cause discharge, and the substrate surface was plasma-treated for 3 minutes. The substrate temperature was kept at about 50 ° C. during plasma polymerization and plasma treatment with N 2 O gas. A sputtered film was formed on this under the same conditions as in Example 1. The results of the characteristic test are shown in Table 1.
【0018】実施例3 実施例1と同じ基板、プラズマ重合装置を用い減圧下、
1,1,3,3−テトラメチルジシロキサンガスとO2
ガスを1対2のモル比で通気しながら圧力を150mT
orrに調節保持し、110KHz、0.5W/cm2
の低波周電力を与えて放電させることによりプラズマを
発生させ、基板表面を60分間プラズマ処理し、プラズ
マ重合膜を有するポリカーボネート樹脂基板を得た。引
続き同装置内にて減圧下、O2ガスのみ通気しながら圧
力を150mTorrに調節保持し、110KHz、
0.25W/cm2の低波周電力を与えて放電させるこ
とによりプラズマを発生させ基板表面を3分間プラズマ
処理した。プラズマ重合、及びO2ガスによるプラズマ
処理中、基板温度を50℃程度に保持した。これに実施
例1と同装置を用い同条件にてスパッター膜を形成し
た。特性試験の結果を表1に示した。Example 3 Using the same substrate and plasma polymerization apparatus as in Example 1, under reduced pressure,
1,1,3,3-tetramethyldisiloxane gas and O 2
The pressure is 150 mT while aerating gas at a molar ratio of 1: 2.
Adjust and hold at orr, 110KHz, 0.5W / cm 2
Plasma was generated by applying low wave power and discharging to produce a polycarbonate resin substrate having a plasma polymerized film by plasma treating the substrate surface for 60 minutes. Then, while maintaining the pressure at 150 mTorr while passing only O 2 gas under reduced pressure in the device, 110 KHz,
Plasma was generated by applying a low-wave-frequency power of 0.25 W / cm 2 to cause discharge, and the substrate surface was plasma-treated for 3 minutes. The substrate temperature was maintained at about 50 ° C. during plasma polymerization and plasma treatment with O 2 gas. A sputtered film was formed on this under the same conditions as in Example 1. The results of the characteristic test are shown in Table 1.
【0019】実施例4 実施例1と同じ基板、プラズマ重合装置を用い減圧下、
1,3,5,7−テトラメチルシクロテトラシロキサン
とO2ガスを1対2のモル比で通気しながら圧力を18
0mTorrに調節保持し、110KHz、0.5W/
cm2の低周波電力を与えて放電させることによりプラ
ズマを発生させ、基板表面を60分間プラズマ処理し、
プラズマ重合膜を有するポリカーボネート樹脂基板を得
た。引続き同装置内にて減圧下、O2ガスのみ通気しな
がら圧力を200mTorrに調節保持し、110KH
z、0.25W/cm2の低周波電力を与えて放電させ
る事によりプラズマを発生させ基板表面を3分間プラズ
マ処理した。プラズマ重合、及びO2ガスによるプラズ
マ処理中、基板温度を50℃程度に保持した。これに実
施例1と同装置を用い同条件にてスパッタ膜を形成し
た。特性試験の結果を表1に示した。Example 4 Using the same substrate and plasma polymerization apparatus as in Example 1, under reduced pressure,
The pressure was raised to 18 while aerating 1,3,5,7-tetramethylcyclotetrasiloxane and O 2 gas at a molar ratio of 1: 2.
Adjust and hold at 0mTorr, 110KHz, 0.5W /
Plasma is generated by applying a low frequency electric power of cm 2 to discharge, and the substrate surface is plasma-treated for 60 minutes,
A polycarbonate resin substrate having a plasma polymerized film was obtained. Subsequently under reduced pressure at the same device to adjust the holding pressure to 200mTorr with aeration only O 2 gas, 110KH
Plasma was generated by applying a low frequency electric power of z, 0.25 W / cm 2 to cause discharge, and the substrate surface was plasma-treated for 3 minutes. The substrate temperature was maintained at about 50 ° C. during plasma polymerization and plasma treatment with O 2 gas. A sputtered film was formed on this under the same conditions as in Example 1. The results of the characteristic test are shown in Table 1.
【0020】比較例1 実施例1と同じ基板、装置を用い同条件にてプラズマ重
合のみ行った。特性試験の結果を表2に示した。 比較例2 実施例2と同じ基板、装置を用い同条件にてプラズマ重
合のみ行った。特性試験の結果を表2に示した。 比較例3 実施例3と同じ基板、装置を用い同条件にてプラズマ重
合のみ行った。特性試験の結果を表2に示した。 比較例4 実施例4と同じ基板、装置を用い同条件にてプラズマ重
合のみ行った。特性試験の結果を表2に示した。 比較例5 実施例1と同じ基板、装置を用いてスパッターのみ行っ
た。特性試験の結果を表2に示した。Comparative Example 1 Only the plasma polymerization was carried out under the same conditions using the same substrate and apparatus as in Example 1. The results of the characteristic test are shown in Table 2. Comparative Example 2 Only the plasma polymerization was performed under the same conditions using the same substrate and apparatus as in Example 2. The results of the characteristic test are shown in Table 2. Comparative Example 3 Only the plasma polymerization was carried out under the same conditions using the same substrate and apparatus as in Example 3. The results of the characteristic test are shown in Table 2. Comparative Example 4 Using the same substrate and apparatus as in Example 4, only plasma polymerization was performed under the same conditions. The results of the characteristic test are shown in Table 2. Comparative Example 5 Only the sputtering was performed using the same substrate and apparatus as in Example 1. The results of the characteristic test are shown in Table 2.
【0021】[0021]
【発明の効果】被膜を特殊な多層構造としてプラスチッ
クス製品の表面を被覆することにより耐擦傷性、耐摩耗
性、耐薬品性、帯電特性等に優れ、各種光学用途の材料
として用いて好適なプラスチックス製品が得られる。EFFECTS OF THE INVENTION By coating the surface of a plastic product with a special multilayer structure, it has excellent scratch resistance, abrasion resistance, chemical resistance, charging characteristics, etc. and is suitable for use as a material for various optical applications. Plastics products are obtained.
【0022】[0022]
【表1】 [Table 1]
【0023】[0023]
【表2】 [Table 2]
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 C23C 14/10 7308−4K 16/22 7325−4K ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Office reference number FI technical display location C23C 14/10 7308-4K 16/22 7325-4K
Claims (5)
に積層されてなる表面被覆プラスチックス製品。 A被膜:珪素化合物をモノマーとしてプラズマ重合によ
り形成され、膜厚が0.1μm〜10μmであり、含有
される炭素と珪素の原子数比が0.1〜3の範囲にある
プラズマ重合被膜。 B被膜:膜厚が0.1μm〜3μmの範囲にあるSiO
x(x=1.5〜2.0)からなる被膜。1. A surface-coated plastic product having the following A film and B film laminated in this order on the surface. A film: A plasma polymerization film formed by plasma polymerization using a silicon compound as a monomer, having a film thickness of 0.1 μm to 10 μm, and having an atomic ratio of carbon to silicon contained in the range of 0.1 to 3. B film: SiO having a film thickness in the range of 0.1 μm to 3 μm
A coating film composed of x (x = 1.5 to 2.0).
原子を含む珪素化合物である事を特徴とする請求項1に
記載の表面被覆プラスチックス製品。2. The surface-coated plastics product according to claim 1, wherein the plasma-polymerized monomer of the A coating film is a silicon compound containing a carbon atom.
原子と酸素原子を含む珪素化合物である事を特徴とする
請求項1に記載の表面被覆プラスチックス製品。3. The surface-coated plastic product according to claim 1, wherein the plasma-polymerized monomer of the film A is a silicon compound containing carbon atoms and oxygen atoms.
原子と窒素原子を含む珪素化合物である事を特徴とする
請求項1に記載の表面被覆プラスチックス製品。4. The surface-coated plastic product according to claim 1, wherein the plasma-polymerized monomer of the A coating film is a silicon compound containing carbon atoms and nitrogen atoms.
ラズマCVD法で形成されてなる事を特徴とする請求項
1に記載の表面被覆プラスチックス製品。5. The surface-coated plastic product according to claim 1, wherein the B coating film is formed by a sputtering method or a plasma CVD method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4006839A JPH05194770A (en) | 1992-01-17 | 1992-01-17 | Surface-coated plastic article |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4006839A JPH05194770A (en) | 1992-01-17 | 1992-01-17 | Surface-coated plastic article |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH05194770A true JPH05194770A (en) | 1993-08-03 |
Family
ID=11649414
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4006839A Pending JPH05194770A (en) | 1992-01-17 | 1992-01-17 | Surface-coated plastic article |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH05194770A (en) |
Cited By (14)
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---|---|---|---|---|
JPH05345831A (en) * | 1992-06-15 | 1993-12-27 | Toyo Seikan Kaisha Ltd | Production of gas barrier plastic material |
JPH07234422A (en) * | 1994-02-25 | 1995-09-05 | Nec Corp | Optical waveguide element |
JPH10500609A (en) * | 1994-03-03 | 1998-01-20 | モンサント カンパニー | High wear resistance and flexible coatings for flexible substrates |
WO2004044039A3 (en) * | 2002-11-12 | 2004-08-05 | Dow Global Technologies Inc | Process and apparatus for depositing plasma coating onto a container |
WO2006025356A1 (en) * | 2004-09-01 | 2006-03-09 | Konica Minolta Holdings, Inc. | Gas barrier multilayer body and method for producing same |
WO2008156057A1 (en) * | 2007-06-18 | 2008-12-24 | Seiko Epson Corporation | Bonding method, bonded body, droplet ejection head, and droplet ejection device |
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JP2009023338A (en) * | 2007-06-18 | 2009-02-05 | Seiko Epson Corp | Bonding process, bonded body, liquid droplet discharge head, and liquid-droplet discharge apparatus |
JP2009120881A (en) * | 2007-11-13 | 2009-06-04 | Tsukishima Kikai Co Ltd | Plasma cvd system and method for forming plastic surface protective film |
JP2009120880A (en) * | 2007-11-13 | 2009-06-04 | Tsukishima Kikai Co Ltd | Plasma treatment device, and method for forming plastic surface protective film |
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-
1992
- 1992-01-17 JP JP4006839A patent/JPH05194770A/en active Pending
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05345831A (en) * | 1992-06-15 | 1993-12-27 | Toyo Seikan Kaisha Ltd | Production of gas barrier plastic material |
JPH07234422A (en) * | 1994-02-25 | 1995-09-05 | Nec Corp | Optical waveguide element |
JPH10500609A (en) * | 1994-03-03 | 1998-01-20 | モンサント カンパニー | High wear resistance and flexible coatings for flexible substrates |
WO2004044039A3 (en) * | 2002-11-12 | 2004-08-05 | Dow Global Technologies Inc | Process and apparatus for depositing plasma coating onto a container |
WO2006025356A1 (en) * | 2004-09-01 | 2006-03-09 | Konica Minolta Holdings, Inc. | Gas barrier multilayer body and method for producing same |
JPWO2006025356A1 (en) * | 2004-09-01 | 2008-05-08 | コニカミノルタホールディングス株式会社 | Gas barrier laminate and method for producing the same |
US8748003B2 (en) | 2004-09-01 | 2014-06-10 | Konica Minolta Holdings, Inc. | Gas barrier laminate and production method of the same |
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WO2008156057A1 (en) * | 2007-06-18 | 2008-12-24 | Seiko Epson Corporation | Bonding method, bonded body, droplet ejection head, and droplet ejection device |
JP2009023338A (en) * | 2007-06-18 | 2009-02-05 | Seiko Epson Corp | Bonding process, bonded body, liquid droplet discharge head, and liquid-droplet discharge apparatus |
WO2009008309A1 (en) * | 2007-07-11 | 2009-01-15 | Seiko Epson Corporation | Base material with junction film, method of joining and junction structure |
US20100323192A1 (en) * | 2007-07-11 | 2010-12-23 | Seiko Epson Corporation | Base member including bonding film, bonding method and bonded body |
WO2009008310A1 (en) * | 2007-07-11 | 2009-01-15 | Seiko Epson Corporation | Base material with junction film, method of joining and junction structure |
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