[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

JPH05152464A - Epoxy resin composition for photosemiconductor sealing - Google Patents

Epoxy resin composition for photosemiconductor sealing

Info

Publication number
JPH05152464A
JPH05152464A JP30944791A JP30944791A JPH05152464A JP H05152464 A JPH05152464 A JP H05152464A JP 30944791 A JP30944791 A JP 30944791A JP 30944791 A JP30944791 A JP 30944791A JP H05152464 A JPH05152464 A JP H05152464A
Authority
JP
Japan
Prior art keywords
epoxy resin
composition
formula
heat resistance
resin composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP30944791A
Other languages
Japanese (ja)
Other versions
JP2933771B2 (en
Inventor
Tomohito Ootsuki
智仁 大槻
Hiroshi Shimawaki
寛 嶋脇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Bakelite Co Ltd
Original Assignee
Sumitomo Bakelite Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Bakelite Co Ltd filed Critical Sumitomo Bakelite Co Ltd
Priority to JP30944791A priority Critical patent/JP2933771B2/en
Publication of JPH05152464A publication Critical patent/JPH05152464A/en
Application granted granted Critical
Publication of JP2933771B2 publication Critical patent/JP2933771B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Compositions Of Macromolecular Compounds (AREA)
  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE:To improve heat resistance and suppress deterioration of light transmittance in a high-temperature and high-moisture atmosphere by permitting the composition to contain a prescribed epoxy resin with 20-100wt.% of the total epoxy resin and permitting the composition to contain hardening agent and hardening accelerator. CONSTITUTION:The composition contains epoxy resin expressed by a formula I and II with 20-100wt.% of the total epoxy resin. The composition also contains hardening agent and hardening accelerator. When the (m) of the formula I is less than three, heat resistance is not sufficient and when the (m) is over 30, the softening point becomes too high to manufacture the resin composition. When the (l) of the formula II is less than two, heat resistance is not sufficiently high and when the (l) is over 20, the softening point becomes too high to manufacture a resin composition. The epoxy resin which satisfies the formulas I and II improves the heat resistance by its multifunctional molecule structure, deterioration of moisture absorption is suppressed in the high-temperature high- moisture atmosphere at 100-125 deg.C with the moisture of 85-100% and the deterioration of light transmittance is suppressed.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の詳細な説明】本発明は光透過性に優れた光半
導体封止用エポキシ樹脂組成物に関するものである。
TECHNICAL FIELD The present invention relates to an epoxy resin composition for encapsulating an optical semiconductor, which is excellent in light transmittance.

【0002】[0002]

【従来の技術】オプトエレクトロニクス関連分野におい
て酸無水物硬化タイプのエポキシ樹脂組成物は、透明性
に優れかつ波長900〜1000nmの近赤外光領域で
の透過率が優れているためフォトセンサー等に使用され
ている。しかし、従来の酸無水物硬化タイプのエポキシ
樹脂組成物は温度100〜125℃、湿度85〜100
%の高温高湿雰囲気下では耐湿性に難点があり、光透過
率が著く低下する欠点があった。これらの欠点を改良す
るためシリコーンオイルを添加して耐湿性を良くする方
法(特開昭61−127723号公報)、カップリング
剤を添加して耐湿性を良くする方法(特開昭61−12
7724号公報)などが試みられているが、いまだ満足
できるものでなかった。従って、耐湿性が必要とされる
エリアセンサーなどの用途にはガラスを用いて気密封止
した光半導体が用いられている。しかし、組立コストが
高いという欠点があり、生産性かつ耐湿性にも優れたエ
ポキシ成形材料の開発が望まれていた。
2. Description of the Related Art In the field of optoelectronics, an acid anhydride-curable epoxy resin composition has excellent transparency and transmittance in the near-infrared light region of wavelength 900 to 1000 nm, and is therefore suitable for photosensors and the like. It is used. However, the conventional acid anhydride curing type epoxy resin composition has a temperature of 100 to 125 ° C. and a humidity of 85 to 100.
% In a high temperature and high humidity atmosphere, there is a drawback in moisture resistance and there is a drawback that the light transmittance is significantly lowered. To improve these drawbacks, a method of adding silicone oil to improve the moisture resistance (JP-A-61-127723) and a method of adding a coupling agent to improve the moisture resistance (JP-A-61-12).
No. 7724) was tried, but it was not yet satisfactory. Therefore, optical semiconductors hermetically sealed using glass are used for applications such as area sensors where moisture resistance is required. However, there is a drawback that the assembling cost is high, and development of an epoxy molding material excellent in productivity and moisture resistance has been desired.

【0003】[0003]

【発明が解決しようとする課題】本発明は高温高湿雰囲
気下で光透過率が劣化しない光半導体封止用エポキシ樹
脂組成物を提供するものである。
DISCLOSURE OF THE INVENTION The present invention provides an epoxy resin composition for optical semiconductor encapsulation, in which the light transmittance does not deteriorate in a high temperature and high humidity atmosphere.

【0004】[0004]

【課題を解決するための手段】本発明は、(A)下記の
式(1)および(2)で示されるエポキシ樹脂を総エポ
キシ樹脂量の20〜100重量%含有し、(B)硬化剤
および(C)硬化促進剤からなる光半導体封止用エポキ
シ樹脂組成物である。
The present invention comprises (A) an epoxy resin represented by the following formulas (1) and (2) in an amount of 20 to 100% by weight based on the total amount of the epoxy resin, and (B) a curing agent. And (C) an epoxy resin composition for optical semiconductor encapsulation, which comprises a curing accelerator.

【0005】[0005]

【化3】 [Chemical 3]

【0006】[0006]

【化4】 [Chemical 4]

【0007】本発明の式(1)および式(2)のエポキ
シ樹脂を用いると多官能の分子構造のため耐熱性が上が
り温度100〜125℃、湿度85〜100%のような
高温高湿雰囲気下での吸湿劣化が少なくなり光透過性の
低下が抑えられる。式(1)のmは4〜30の範囲でm
が3未満だと耐熱性が充分でなく、高温高湿下での光透
過性の低下が抑えられない。また、mが30を越えると
軟化点が高くなり過ぎて、樹脂組成物の製造が困難とな
る。
When the epoxy resin of the formula (1) and the formula (2) of the present invention is used, the heat resistance is increased due to the polyfunctional molecular structure, and the temperature is 100 to 125 ° C. and the humidity is 85 to 100%. Deterioration of moisture absorption under the condition is reduced, and deterioration of light transmittance is suppressed. In the formula (1), m is in the range of 4 to 30.
Is less than 3, the heat resistance is not sufficient, and the reduction of the light transmittance under high temperature and high humidity cannot be suppressed. Further, when m exceeds 30, the softening point becomes too high, which makes it difficult to manufacture the resin composition.

【0008】式(2)のlは3〜20の範囲でlが2未
満では耐熱性が充分に上がらず高温高湿雰囲気下での光
透過性の低下が抑えられない。また、lが20を越える
と軟化点が上がり樹脂組成物の製造が困難になる。式
(1)および式(2)に配合するエポキシ樹脂はビスフ
ェノールA型エポキシ樹脂、ノボラック型エポキシ樹
脂、脂環式エポキシ樹脂等が挙げられ特に淡色透明のも
のに限定される。式(1)および式(2)のエポキシ樹
脂の総量は総エポキシ樹脂量の20〜100重量%で、
好ましくは50重量%以上である。20重量%未満であ
ると耐熱性が充分に上がらず、高温高湿雰囲気下での光
透過率の低下が抑えられない。式(1)と式(2)の重
量配合割合は、式(1)/式(2)=80/20〜20
/80で、好ましくは70/30〜30/70である。
In the formula (2), l is in the range of 3 to 20, and if l is less than 2, the heat resistance is not sufficiently improved and the deterioration of the light transmittance in a high temperature and high humidity atmosphere cannot be suppressed. Further, when 1 exceeds 20, the softening point increases and it becomes difficult to produce a resin composition. Examples of the epoxy resin to be added to the formulas (1) and (2) include a bisphenol A type epoxy resin, a novolac type epoxy resin, and an alicyclic epoxy resin. The total amount of the epoxy resin of the formula (1) and the formula (2) is 20 to 100% by weight of the total amount of the epoxy resin,
It is preferably 50% by weight or more. If it is less than 20% by weight, the heat resistance is not sufficiently improved, and the reduction of the light transmittance under a high temperature and high humidity atmosphere cannot be suppressed. The weight blending ratio of the formula (1) and the formula (2) is as follows: formula (1) / formula (2) = 80/20 to 20
/ 80, preferably 70/30 to 30/70.

【0009】硬化剤としては多塩基カルボン酸無水物、
フェノール型ノボラック樹脂等がある。多塩基カルボン
酸無水物としては無水フタル、無水 ヘキサヒドロフタ
ル酸、無水テトラヒドロフタル酸、無水マレイン酸、無
水ナジック酸などが挙げられる。フェノール型ノボラッ
ク樹脂にはフェノール型、クレゾール型、ビスフェノー
ルA型等がある。これらは1種または2種以上を併用し
てもよい。硬化剤とエポキシ樹脂の配合割合はエポキシ
当量1に対して0.5〜1.2当量の硬化剤が望まし
く、この範囲外では成形性に欠陥を起こす場合がある。
As the curing agent, polybasic carboxylic acid anhydride,
Examples include phenol type novolac resins. Examples of polybasic carboxylic acid anhydrides include phthalic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, maleic anhydride and nadic acid anhydride. Phenol type novolac resins include phenol type, cresol type and bisphenol A type. These may be used alone or in combination of two or more. The mixing ratio of the curing agent and the epoxy resin is preferably 0.5 to 1.2 equivalents relative to 1 epoxy equivalent, and if it is out of this range, moldability may be deteriorated.

【0010】硬化促進剤にはトリメチルアミン、トリエ
タノールアミン等の第3級アミン、トリフェニルホスフ
ィン、トリシクロヘキシルホスフィン等の有機ホスフィ
ン化合物、2−メチルイミダゾール等のイミダゾール類
が挙げられる。また、本発明には公知のアゾ系、キノン
系の染料を1種または2種以上を添加してもよい。更に
離型剤として脂肪酸エステル、ステアリン酸等を添加す
ることができる。本発明の組成物の製造は各成分を混合
し、加熱ロールを用いて50〜90℃で混練し冷却固化
後、粉砕して粉末状とする。
Examples of the curing accelerator include tertiary amines such as trimethylamine and triethanolamine, organic phosphine compounds such as triphenylphosphine and tricyclohexylphosphine, and imidazoles such as 2-methylimidazole. Further, one or more known azo or quinone dyes may be added to the invention. Further, a fatty acid ester, stearic acid or the like can be added as a release agent. In the production of the composition of the present invention, the respective components are mixed, kneaded at 50 to 90 ° C. using a heating roll, cooled and solidified, and then pulverized into a powder form.

【0011】[0011]

【実施例】以下、本発明を実施例を用いて具体的に説明
する。
EXAMPLES The present invention will be specifically described below with reference to examples.

【0012】実施例 1〜4、比較例1〜3 表1のエポキシ樹脂100重量部にテトラヘキサ無水フ
タル酸をエポキシ当量1に対し0.9当量添加し、さら
に2ーメチルイミダゾール1重量部、グリセリン脂肪酸
エステル3重量部を配合し、70〜90℃の加熱ロール
を用いて加熱混練を行ない、冷却固化後、粉砕して樹脂
組成物の粉末を得た。樹脂組成物を低圧トランスファー
成形機を用いて温度150℃で厚さ1mmの試験片を成
形し、さらに150℃で4時間ポストキュアした。この
試験片を用いて未処理および吸湿後の光透過率を評価し
た。結果を表1に示す。
Examples 1 to 4 and Comparative Examples 1 to 3 Tetrahexaphthalic anhydride was added to 100 parts by weight of the epoxy resin shown in Table 1 in an amount of 0.9 equivalent to 1 equivalent of epoxy, and 1 part by weight of 2-methylimidazole and glycerin were added. 3 parts by weight of fatty acid ester was blended, heated and kneaded with a heating roll at 70 to 90 ° C., cooled and solidified, and then pulverized to obtain a resin composition powder. Using a low-pressure transfer molding machine, the resin composition was molded into a test piece having a thickness of 1 mm at a temperature of 150 ° C., and post-cured at 150 ° C. for 4 hours. This test piece was used to evaluate the light transmittance of untreated and after moisture absorption. The results are shown in Table 1.

【0013】※光透過率 試験片を100℃の純水で200時間煮沸し分光光度計
を用いて波長950nmの光透過率を測定。 光透過率 ◎:90%以上 ○:85〜90% ×:85%未満 ※ガラス転移温度 15mm×3mm×4mmの試験片をTMA試験機を用
いて室温より260℃まで加熱し測定。
* Light transmittance The test piece was boiled in pure water at 100 ° C for 200 hours, and the light transmittance at a wavelength of 950 nm was measured using a spectrophotometer. Light transmittance ◎: 90% or more ○: 85 to 90% ×: less than 85% * Measured by heating a test piece with a glass transition temperature of 15 mm × 3 mm × 4 mm from room temperature to 260 ° C using a TMA tester.

【0014】[0014]

【表1】 [Table 1]

【0015】 A:式(1)のエポキシ樹脂(エポキシ当量190、軟
化点73℃,m=15) B:式(2)のエポキシ樹脂(エポキシ当量110、軟
化点61℃,l=10) C:ビスフェノールA型エポキシ樹脂(エポキシ当量4
90、軟化点68℃) D:クレゾールノボラック型エポキシ樹脂(エポキシ当
量220、軟化点70℃)
A: Epoxy resin of formula (1) (epoxy equivalent 190, softening point 73 ° C., m = 15) B: Epoxy resin of formula (2) (epoxy equivalent 110, softening point 61 ° C., l = 10) C : Bisphenol A type epoxy resin (epoxy equivalent 4
90, softening point 68 ° C) D: Cresol novolac type epoxy resin (epoxy equivalent 220, softening point 70 ° C)

【0016】[0016]

【発明の効果】本発明のエポキシ樹脂組成物を用いると
透明性に優れ、かつ耐湿性が優れており、近赤外光領域
の光透過率の劣化が抑えられエリアセンサー等のような
耐湿性の要求される用途への展開が出来る。また、ガラ
スを用いた気密封止に較べて組立コストを低減できる効
果がある。
When the epoxy resin composition of the present invention is used, the transparency and moisture resistance are excellent, and the deterioration of the light transmittance in the near-infrared light region is suppressed, and the moisture resistance of an area sensor or the like is suppressed. It can be expanded to the required applications of. Moreover, there is an effect that the assembly cost can be reduced as compared with the hermetic sealing using glass.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 C08L 63/00 NJW 8830−4J ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Internal reference number FI technical display location C08L 63/00 NJW 8830-4J

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 (A) 下記式(1)および(2)で示さ
れるエポキシ樹脂を総エポキシ樹脂量の20〜100%
重量含有し、(B)硬化剤 および(C)硬化促進剤か
らなる半導体封止用エポキシ樹脂組成物。 【化1】 【化2】
1. An epoxy resin represented by the following formula (1) and (2): (A) 20 to 100% of the total amount of epoxy resin.
An epoxy resin composition for semiconductor encapsulation, which is contained by weight and comprises (B) a curing agent and (C) a curing accelerator. [Chemical 1] [Chemical 2]
JP30944791A 1991-11-25 1991-11-25 Epoxy resin composition for optical semiconductor encapsulation Expired - Fee Related JP2933771B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP30944791A JP2933771B2 (en) 1991-11-25 1991-11-25 Epoxy resin composition for optical semiconductor encapsulation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30944791A JP2933771B2 (en) 1991-11-25 1991-11-25 Epoxy resin composition for optical semiconductor encapsulation

Publications (2)

Publication Number Publication Date
JPH05152464A true JPH05152464A (en) 1993-06-18
JP2933771B2 JP2933771B2 (en) 1999-08-16

Family

ID=17993114

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30944791A Expired - Fee Related JP2933771B2 (en) 1991-11-25 1991-11-25 Epoxy resin composition for optical semiconductor encapsulation

Country Status (1)

Country Link
JP (1) JP2933771B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013051708A1 (en) 2011-10-07 2013-04-11 ソニーケミカル&インフォメーションデバイス株式会社 Anisotropic conductive adhesive and method for producing same, and light-emitting device and method for producing same
WO2014129395A1 (en) 2013-02-19 2014-08-28 デクセリアルズ株式会社 Anisotropically conductive adhesive, light emitting device, and method for producing anisotropically conductive adhesive
KR20160135700A (en) 2014-03-19 2016-11-28 데쿠세리아루즈 가부시키가이샤 Anisotropic conductive adhesive
KR20180136499A (en) 2016-05-31 2018-12-24 데쿠세리아루즈 가부시키가이샤 Light emitting device and manufacturing method of light emitting device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013051708A1 (en) 2011-10-07 2013-04-11 ソニーケミカル&インフォメーションデバイス株式会社 Anisotropic conductive adhesive and method for producing same, and light-emitting device and method for producing same
KR20140084076A (en) 2011-10-07 2014-07-04 데쿠세리아루즈 가부시키가이샤 Anisotropic conductive adhesive and method for producing same, and light-emitting device and method for producing same
WO2014129395A1 (en) 2013-02-19 2014-08-28 デクセリアルズ株式会社 Anisotropically conductive adhesive, light emitting device, and method for producing anisotropically conductive adhesive
US9487678B2 (en) 2013-02-19 2016-11-08 Dexerials Corporation Anisotropic conductive adhesive, light emitting device, and method for producing anisotropic conductive adhesive
KR20160135700A (en) 2014-03-19 2016-11-28 데쿠세리아루즈 가부시키가이샤 Anisotropic conductive adhesive
US9670385B2 (en) 2014-03-19 2017-06-06 Dexerials Corporation Anisotropic conductive adhesive
KR20180136499A (en) 2016-05-31 2018-12-24 데쿠세리아루즈 가부시키가이샤 Light emitting device and manufacturing method of light emitting device
KR20200108117A (en) 2016-05-31 2020-09-16 데쿠세리아루즈 가부시키가이샤 Light-emitting device and method for manufacturing light-emitting device
US10873016B2 (en) 2016-05-31 2020-12-22 Dexerials Corporation Light-emitting device and method for manufacturing the same

Also Published As

Publication number Publication date
JP2933771B2 (en) 1999-08-16

Similar Documents

Publication Publication Date Title
JP3623530B2 (en) Optical semiconductor device
JP3153171B2 (en) Optical semiconductor device and epoxy resin composition for encapsulating optical semiconductor
JP2008285591A (en) Epoxy resin composition for sealing optical semiconductor element, cured product thereof and optical semiconductor device using the same
JPH06100762A (en) Epoxy resin composition
JP2807094B2 (en) Epoxy resin composition for optical semiconductor encapsulation
KR101597837B1 (en) Epoxy resin composition for optical semiconductor light-receiving element encapsulation and process for producing the same, and optical semiconductor device
JPH05152464A (en) Epoxy resin composition for photosemiconductor sealing
JPS60124617A (en) Resin-sealed emitter
JPH08311168A (en) Epoxy resin composition for sealing optical semiconductor element and optical semiconductor device using same
JP2820540B2 (en) Epoxy resin composition for optical semiconductor encapsulation
JP4475771B2 (en) Epoxy resin composition for optical semiconductor encapsulation
JP2935927B2 (en) Epoxy resin composition for optical semiconductor encapsulation
JP3394736B2 (en) Epoxy resin composition and semiconductor device
JP3207278B2 (en) Resin composition for optical semiconductor encapsulation
JPH0827253A (en) Photosemiconductor apparatus
JPH07224145A (en) Epoxy resin composition for sealing optical semiconductor
JP3068896B2 (en) Epoxy resin composition for semiconductor encapsulation
JP3283368B2 (en) Optical semiconductor encapsulation resin composition
JP2864842B2 (en) Epoxy resin composition for optical semiconductor encapsulation
JPS61151229A (en) Epoxy resin composition for pressure molding
JPH1045879A (en) Epoxy resin composition for sealing optical semiconductor
JP2001226450A (en) Epoxy resin composition for sealing photosemiconductor and photosemiconductor device
JP2001240652A (en) Epoxy resin composition for sealing optical semiconductor and optical semiconductor device
JP3471895B2 (en) Epoxy resin composition and resin-encapsulated semiconductor device
JPS61127724A (en) Molded article of luminescent or receiving element

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees