JPH0513303A - Reduction projection aligner - Google Patents
Reduction projection alignerInfo
- Publication number
- JPH0513303A JPH0513303A JP3186964A JP18696491A JPH0513303A JP H0513303 A JPH0513303 A JP H0513303A JP 3186964 A JP3186964 A JP 3186964A JP 18696491 A JP18696491 A JP 18696491A JP H0513303 A JPH0513303 A JP H0513303A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- mask
- dimensional
- exposure
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、IC製造装置における
縮少投影露光装置に関し、特に、ASIC(appli
cation specific IC)と呼ばれる多
品種少量生産用ICの製造に好適に利用される縮少投影
露光装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a reduced projection exposure apparatus in an IC manufacturing apparatus, and more particularly to an ASIC (appli).
The present invention relates to a reduced projection exposure apparatus that is preferably used for manufacturing ICs for high-mix low-volume production called "cation specific ICs".
【0002】[0002]
【従来の技術】ASIC用露光装置としては、レチクル
と呼ばれるガラス製のマスクを有する光学式露光装置や
電子ビーム描画装置等が利用されている。2. Description of the Related Art As an exposure apparatus for an ASIC, an optical exposure apparatus having a glass mask called a reticle, an electron beam drawing apparatus, and the like are used.
【0003】[0003]
【発明が解決しようとする課題】しかしながら、レチク
ルを有する光学式露光装置においては、レチクルをIC
の品種毎に数枚以上ずつ用意する必要であり、かなりの
作製日数および費用が必要であるため、少量の生産にお
いては大変無駄であるという問題がある。However, in an optical exposure apparatus having a reticle, the reticle is an IC.
It is necessary to prepare several sheets or more for each product type, which requires a considerable number of production days and cost, so there is a problem that it is very wasteful in a small amount of production.
【0004】一方、電子ビーム描画装置は、一度に描画
できる面積が小さいので、生産性が悪く、また電子ビー
ムという特殊な環境を必要とする手段を用いているの
で、大規模な高価な装置が必要であるという問題があ
る。On the other hand, the electron beam drawing apparatus has a small area which can be drawn at a time, and thus has low productivity. Moreover, since it uses a means called electron beam which requires a special environment, a large-scale expensive apparatus is required. There is a problem that it is necessary.
【0005】本発明は、上述の従来装置における問題点
に鑑みてなされたもので、任意の露光パターンが電気的
に制御でき、少数多品種の露光を高速に実現できる縮少
投影露光装置、すなわちレチクルを制作する必要がな
く、少数生産の場合でも比較的生産性が良い、しかも比
較的小規模で安価な縮少投影露光装置を提供することを
目的とする。The present invention has been made in view of the problems in the above-mentioned conventional apparatus, and it is possible to electrically control an arbitrary exposure pattern and to realize high-speed exposure of a small number of types, that is, a reduced projection exposure apparatus. It is an object of the present invention to provide a reduced projection exposure apparatus that does not require the production of a reticle and has relatively high productivity even in the case of small-scale production, and that it is relatively small-scale and inexpensive.
【0006】[0006]
【課題を解決するための手段】上記の目的を達成するた
め、本発明の縮少投影露光装置は、2次元の任意の照明
パターンを電気的に設定する手段を有する照明系および
2次元の任意のマスクパターンを電気的に設定する手段
を有するマスクの少なくとも一方を設け、任意の露光パ
ターンを電気的に制御できるようにしている。In order to achieve the above object, the reduced projection exposure apparatus of the present invention is an illumination system having a means for electrically setting a two-dimensional arbitrary illumination pattern and a two-dimensional arbitrary illumination system. At least one of the masks having means for electrically setting the mask pattern is provided so that an arbitrary exposure pattern can be electrically controlled.
【0007】2次元の任意の照明パターンを電気的に設
定し得る照明系としては多数のLEDを2次元に配列し
てなる2次元LEDアレイを用いることができる。A two-dimensional LED array in which a large number of LEDs are two-dimensionally arranged can be used as an illumination system capable of electrically setting an arbitrary two-dimensional illumination pattern.
【0008】2次元の任意のマスクパターンを電気的に
設定し得るマスクとしては微小な液晶シャッタを2次元
に多数配列してなる透過式の液晶パネルを用いることが
できる。As a mask that can electrically set an arbitrary two-dimensional mask pattern, a transmissive liquid crystal panel in which a large number of minute liquid crystal shutters are arranged two-dimensionally can be used.
【0009】[0009]
【作用】本発明によれば、2次元の照明パターンを任意
に設定できる可変パターン照明系と2次元の透過光パタ
ーンを任意に設定できる可変パターンマスクの少なくと
も一方を用い、これらのパターンを電気的に制御するこ
とにより、レチクルを製作せずに任意の2次元パターン
を露光することを可能にしている。特に、照明パターン
とマスクパターンを積算することにより、高コストラス
トの露光を可能にすることができる。According to the present invention, at least one of a variable pattern illumination system capable of arbitrarily setting a two-dimensional illumination pattern and a variable pattern mask capable of arbitrarily setting a two-dimensional transmitted light pattern is used, and these patterns are electrically controlled. By controlling to 2, it is possible to expose an arbitrary two-dimensional pattern without manufacturing a reticle. In particular, by integrating the illumination pattern and the mask pattern, exposure at a high cost can be made possible.
【0010】[0010]
【実施例】以下、図面を用いて本発明の実施例を説明す
る。Embodiments of the present invention will be described below with reference to the drawings.
【0011】図1は本発明一実施例に係る縮少投影露光
装置の構成を示す。同図において、1は2次元に配列さ
せた多数のLEDにより構成される可変パターン照明
系、2は縮少投影光学系、3は液晶シャッタによる可変
パターンマスクである。4は縮少投影光学系、5はウエ
ハである。FIG. 1 shows the construction of a reduced projection exposure apparatus according to an embodiment of the present invention. In the figure, 1 is a variable pattern illumination system composed of a large number of LEDs arranged two-dimensionally, 2 is a reduced projection optical system, and 3 is a variable pattern mask with a liquid crystal shutter. Reference numeral 4 is a reduced projection optical system, and 5 is a wafer.
【0012】この露光装置においては、照明系1の2次
元パターンが光学系2によりマスク3に投影される。こ
れにより、照明系1のパターンとマスク3のパターンの
積算が行なわれる。ここで得られた2次元パターンが光
学系4によりウエハに投影露光される。ウエハ5はXY
ステージ6により次のショットが露光位置に来るように
移動され、次の露光が実行される。In this exposure apparatus, the two-dimensional pattern of the illumination system 1 is projected onto the mask 3 by the optical system 2. As a result, the pattern of the illumination system 1 and the pattern of the mask 3 are integrated. The two-dimensional pattern obtained here is projected and exposed on the wafer by the optical system 4. Wafer 5 is XY
The next shot is moved by the stage 6 so as to come to the exposure position, and the next exposure is executed.
【0013】本実施例によれば、照明系とマスク両方の
2次元パターンの積算を行なうことにより、高コントラ
ストの像がウエハ5上に得られる。またコントローラ7
により、照明系1の2次元パターンおよびマスク3の2
次元パターンが電子信号8を用いて電気的に可変であ
り、任意に設定できる。これにより、レチクルを作成す
る日数および費用が不要となる。また、同一ウエハ上
で、照明系とマスクのパターンを変更することにより、
種々のパターンの露光が高速にできる。According to this embodiment, a high-contrast image is obtained on the wafer 5 by integrating the two-dimensional patterns of both the illumination system and the mask. Also the controller 7
The two-dimensional pattern of the illumination system 1 and the two of the mask 3
The dimensional pattern is electrically variable using the electronic signal 8 and can be set arbitrarily. This eliminates the days and expense of creating a reticle. Also, by changing the pattern of the illumination system and the mask on the same wafer,
High-speed exposure of various patterns is possible.
【0014】図2は可変パターン照明系の例である。L
ED11が多数配列され、各LEDのON/OFFによ
り照明パターンが得られる。FIG. 2 shows an example of a variable pattern illumination system. L
A large number of EDs 11 are arranged, and an illumination pattern is obtained by turning ON / OFF each LED.
【0015】図3は可変パターンマスクの例である。液
晶12の1ドットの透過/非透過によりマスクパターン
が得られる。FIG. 3 shows an example of a variable pattern mask. A mask pattern is obtained by transmitting / non-transmitting one dot of the liquid crystal 12.
【0016】[0016]
【他の実施例】図4および図5は本発明の他の実施例を
示す。Other Embodiments FIGS. 4 and 5 show another embodiment of the present invention.
【0017】図4は可変パターンマスクなしの場合であ
り、これにより装置の簡略化が実現できる。FIG. 4 shows a case without a variable pattern mask, which can realize simplification of the apparatus.
【0018】図5は、可変パターン照明系を固定の照明
系9に置き換えた場合であり、これにより装置の簡略化
が実現できる。FIG. 5 shows a case in which the variable pattern illumination system is replaced with a fixed illumination system 9, which makes it possible to simplify the device.
【0019】[0019]
【発明の効果】以上説明したように、本発明によれば、
2次元の照明パターンを任意に設定できる照明系と2次
元のマスクパターンを任意に設定できるマスクとの少な
くとも一方を設け、これらのパターンを電気的に制御す
るようにしたため、多品種の露光を高速に実現できる。
また、レチクルを作成する必要をなくしたため、その作
製日数および費用が要らず、その意味からも高速に、し
かも安価に多種少量の生産ができる。さらに電子ビーム
描画装置のような特殊な環境や大型かつ高価な装置を必
要とせず、安価なASIC用露光装置を提供することが
できる。As described above, according to the present invention,
Since at least one of an illumination system that can arbitrarily set a two-dimensional illumination pattern and a mask that can arbitrarily set a two-dimensional mask pattern is provided and these patterns are electrically controlled, exposure of a wide variety of products can be performed at high speed. Can be realized.
Further, since it is not necessary to prepare a reticle, the number of manufacturing days and cost are not required, and in that sense, it is possible to produce a wide variety of small quantities at high speed and at low cost. Further, it is possible to provide an inexpensive ASIC exposure apparatus without requiring a special environment such as an electron beam drawing apparatus or a large and expensive apparatus.
【図面の簡単な説明】[Brief description of drawings]
【図1】 本発明の一実施例に係る縮少投影露光装置の
概略構成図である。FIG. 1 is a schematic configuration diagram of a reduced projection exposure apparatus according to an embodiment of the present invention.
【図2】 図1における可変パターン照明系の一具体例
を示す図である。FIG. 2 is a diagram showing a specific example of a variable pattern illumination system in FIG.
【図3】 図1における可変パターンマスクの一具体例
を示す図である。FIG. 3 is a diagram showing a specific example of the variable pattern mask in FIG.
【図4】 本発明の第二の実施例に係る縮少投影露光装
置の概略構成図である。FIG. 4 is a schematic configuration diagram of a reduced projection exposure apparatus according to a second embodiment of the present invention.
【図5】 本発明の第三の実施例に係る縮少投影露光装
置の概略構成図である。FIG. 5 is a schematic configuration diagram of a reduced projection exposure apparatus according to a third embodiment of the present invention.
1:可変パターン、2:縮少投影光学系、3:可変パタ
ーンマスク、4:縮少投影光学系、5:ウエハ、6:X
Yステージ、7:露光パターンコントローラ、8:電気
信号、9:ランプ、10:光学系、11:LED、1
2:液晶。1: Variable pattern, 2: Reduced projection optical system, 3: Variable pattern mask, 4: Reduced projection optical system, 5: Wafer, 6: X
Y stage, 7: exposure pattern controller, 8: electric signal, 9: lamp, 10: optical system, 11: LED, 1
2: Liquid crystal.
Claims (3)
設定する手段を有する照明系および/または2次元の任
意のマスクパターンを電気的に設定する手段を有するマ
スクを具備し、任意の露光パターンを電気的に制御でき
るようにしたことを特徴とする縮少投影露光装置。1. An exposure system comprising an illumination system having a means for electrically setting a two-dimensional arbitrary illumination pattern and / or a mask having a means for electrically setting a two-dimensional arbitrary mask pattern. A reduced projection exposure apparatus characterized in that a pattern can be electrically controlled.
列されたLEDアレイからなる請求項1記載の縮少投影
露光装置。2. The reduced projection exposure apparatus according to claim 1, wherein the illumination system comprises an LED array in which a large number of LEDs are two-dimensionally arranged.
元に多数配列した透過式の液晶パネルからなる請求項1
記載の縮少投影露光装置。3. The liquid crystal panel according to claim 1, wherein the mask is a transmissive liquid crystal panel in which a large number of minute liquid crystal shutters are two-dimensionally arranged.
The reduced projection exposure apparatus described.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3186964A JPH0513303A (en) | 1991-07-02 | 1991-07-02 | Reduction projection aligner |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3186964A JPH0513303A (en) | 1991-07-02 | 1991-07-02 | Reduction projection aligner |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0513303A true JPH0513303A (en) | 1993-01-22 |
Family
ID=16197811
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3186964A Pending JPH0513303A (en) | 1991-07-02 | 1991-07-02 | Reduction projection aligner |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0513303A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003068634A (en) * | 2001-08-23 | 2003-03-07 | Toshiyuki Horiuchi | Liquid crystal matrix projection aligner and method thereof |
JP2006313202A (en) * | 2005-05-06 | 2006-11-16 | Nano System Solutions:Kk | Method for manufacturing mask |
JP2007266155A (en) * | 2006-03-28 | 2007-10-11 | Asml Netherlands Bv | Variable illumination source |
JP2008263090A (en) * | 2007-04-12 | 2008-10-30 | Nikon Corp | Pattern generator, pattern forming apparatus and pattern generating method |
JP2012138622A (en) * | 2012-03-30 | 2012-07-19 | Nikon Corp | Pattern generator, pattern forming apparatus and exposure apparatus |
-
1991
- 1991-07-02 JP JP3186964A patent/JPH0513303A/en active Pending
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003068634A (en) * | 2001-08-23 | 2003-03-07 | Toshiyuki Horiuchi | Liquid crystal matrix projection aligner and method thereof |
JP4726173B2 (en) * | 2001-08-23 | 2011-07-20 | 学校法人東京電機大学 | Liquid crystal matrix projection exposure apparatus and liquid crystal matrix projection exposure method |
JP2006313202A (en) * | 2005-05-06 | 2006-11-16 | Nano System Solutions:Kk | Method for manufacturing mask |
JP4570151B2 (en) * | 2005-05-06 | 2010-10-27 | 株式会社ナノシステムソリューションズ | Mask manufacturing method |
JP2007266155A (en) * | 2006-03-28 | 2007-10-11 | Asml Netherlands Bv | Variable illumination source |
JP4495104B2 (en) * | 2006-03-28 | 2010-06-30 | エーエスエムエル ネザーランズ ビー.ブイ. | Variable illumination source |
JP2008263090A (en) * | 2007-04-12 | 2008-10-30 | Nikon Corp | Pattern generator, pattern forming apparatus and pattern generating method |
JP2012138622A (en) * | 2012-03-30 | 2012-07-19 | Nikon Corp | Pattern generator, pattern forming apparatus and exposure apparatus |
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