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JPH05121838A - Semiconductor laser chip carrier and polarized wave synthesis system - Google Patents

Semiconductor laser chip carrier and polarized wave synthesis system

Info

Publication number
JPH05121838A
JPH05121838A JP28242491A JP28242491A JPH05121838A JP H05121838 A JPH05121838 A JP H05121838A JP 28242491 A JP28242491 A JP 28242491A JP 28242491 A JP28242491 A JP 28242491A JP H05121838 A JPH05121838 A JP H05121838A
Authority
JP
Japan
Prior art keywords
semiconductor laser
polarization
chip carrier
light
optical fiber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP28242491A
Other languages
Japanese (ja)
Inventor
Chiyanyaaperasaato Kanteigo
チヤンヤーペラサート カンテイゴ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP28242491A priority Critical patent/JPH05121838A/en
Publication of JPH05121838A publication Critical patent/JPH05121838A/en
Pending legal-status Critical Current

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  • Optical Couplings Of Light Guides (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To provide a small-sized low-cost polarized synthesis system, which synthesizes vertical and horizontal polarized waves, by making alignment easy for an optical axis of light emitted from a semiconductor laser device. CONSTITUTION:Two semiconductor laser devices 21 and 22 are mounted on a chip carrier 11 in such a way that the vertically polarization face of light from the semiconductor laser device 21 meets light 101 emitted from the semiconductor laser device 22 at right angles on the same plane at equal distances from these laser devices. A polarization synthesizing film 41 is set at this point of intersection, and then synthesized light is generated with lenses 31, 32 and 33 and is issued to an optical fiber 51.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体レーザによる光
通信,光情報処理システム等で利用される半導体素子チ
ップキャリアに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor element chip carrier used in optical communication using a semiconductor laser, an optical information processing system and the like.

【0002】[0002]

【従来の技術】光ファイバ通信システム,光交換システ
ムにおいて、2つの半導体レーザからの光を偏波合成す
ることはよく使われている。
2. Description of the Related Art In optical fiber communication systems and optical switching systems, polarization combining of light from two semiconductor lasers is often used.

【0003】例えば、図3を用いて説明すると、2台の
半導体レーザモジュール81,82がそれぞれ偏波保存
光ファイバ61,62を介して偏波合成器110の光フ
ァイバ端末52,54に接続されている。半導体レーザ
モジュール81からの水平な偏波の出射光102と半導
体レーザモジュール82からの垂直な偏波の出射光92
とは、それぞれ光ファイバ結合レンズ34,35を介し
て偏波合成膜42に照射され合成される。合成された光
は光ファイバ結合レンズ36,光ファイバ端末53を介
して光ファイバ50へ出力される。
For example, referring to FIG. 3, two semiconductor laser modules 81 and 82 are connected to optical fiber terminals 52 and 54 of a polarization combiner 110 via polarization maintaining optical fibers 61 and 62, respectively. ing. Horizontally polarized outgoing light 102 from the semiconductor laser module 81 and vertically polarized outgoing light 92 from the semiconductor laser module 82.
And are irradiated onto the polarization combining film 42 via the optical fiber coupling lenses 34 and 35, respectively, and are combined. The combined light is output to the optical fiber 50 via the optical fiber coupling lens 36 and the optical fiber terminal 53.

【0004】図3の構成により光ファイバ増幅器の分野
において、偏波合成機110で2台の励起用半導体レー
ザモジュール81,82の出射光102,92を合成し
て、高出力な励起光を得ることが可能である。また、高
信頼度の光通信システムの分野において、1台の半導体
レーザモジュールを通常の光源として使い、他1台を予
備とすることができる。
In the field of optical fiber amplifiers having the configuration shown in FIG. 3, the polarization combiner 110 combines the emitted lights 102 and 92 of the two pumping semiconductor laser modules 81 and 82 to obtain high-power pumping light. It is possible. Further, in the field of highly reliable optical communication system, one semiconductor laser module can be used as a normal light source and the other one can be used as a spare.

【0005】上記の従来の半導体レーザモジュールは、
図5のように、半導体レーザ素子23がチップキャリア
12の上面に配置される。出射光103の偏波は水平方
向である。このチップキャリアをパッケージに装着し、
レンズで半導体レーザ素子と偏波保存光ファイバを結合
する。
The above-mentioned conventional semiconductor laser module is
As shown in FIG. 5, the semiconductor laser device 23 is arranged on the upper surface of the chip carrier 12. The polarization of the emitted light 103 is horizontal. Attach this chip carrier to the package,
The lens couples the semiconductor laser device and the polarization maintaining optical fiber.

【0006】[0006]

【発明が解決しようとする課題】しかしながら、図4に
示した従来例の光偏波合成器では、各半導体レーザ素子
は図5のようなチップキャリアに搭載してモジュール化
することが必要であり、偏波保存光ファイバを使うとい
うことで、組立上光軸調整が困難であることと、偏波保
存光ファイバは高価であるという問題がある。
However, in the conventional optical polarization combiner shown in FIG. 4, it is necessary to mount each semiconductor laser element on a chip carrier as shown in FIG. 5 to form a module. Since the polarization maintaining optical fiber is used, there are problems that the optical axis adjustment is difficult in assembly and the polarization maintaining optical fiber is expensive.

【0007】[0007]

【課題を解決するための手段】本発明の半導体レーザチ
ップキャリアは、偏波合成すべき垂直な偏波面の第1の
出射光及び水平な偏波面の第2の出射光の各各をそれぞ
れ発生する第1の半導体レーザ素子と第2の半導体レー
ザ素子とを、前記第1及び第2の出射光が同一平面上の
各発生源から当距離の位置で直角に交わるように装着し
ている。
The semiconductor laser chip carrier of the present invention generates a first outgoing light having a vertical polarization plane and a second outgoing light having a horizontal polarization plane to be polarization-combined. The first semiconductor laser device and the second semiconductor laser device are mounted so that the first and second emitted lights intersect at right angles from respective sources on the same plane at right angles.

【0008】本発明の偏波合成システムは、上記構成の
半導体レーザチップキャリアの前記第1及び第2の出射
光の交点に偏波合成膜を配置し、この偏波合成膜及びレ
ンズを介して偏波合成された前記第1及び第2の出射光
を1本の光ファイバに出力する構成である。
In the polarization combining system of the present invention, a polarization combining film is arranged at the intersection of the first and second emitted lights of the semiconductor laser chip carrier having the above structure, and the polarization combining film and the lens are used to interpose the polarization combining film. It is a configuration for outputting the first and second outgoing lights that have been polarization-combined to one optical fiber.

【0009】[0009]

【実施例】以下、本発明の実施例を図面を参照して具体
的に説明する。
Embodiments of the present invention will be specifically described below with reference to the drawings.

【0010】図1は本発明の一実施例の外観図であり、
分図(a)はその上面図、分図(b)はその斜視図であ
る。第1の半導体レーザ素子21と、第2の半導体レー
ザ素子22とを装着するチップキャリア11において、
半導体レーザ素子21の出射光91は偏波面が垂直に、
また半導体レーザ素子22の出射光101は偏波面が水
平になり、さらに半導体レーザ素子21,22は出射方
向が同一平面上で互いに直角に交わり、交点Aから半導
体レーザ素子21,22までの距離が互いに等しくなる
ように、2つの半導体レーザ素子21,22を装着す
る。チップキャリア11は、銅製で形成されると共に半
導体レーザ素子21,22を装着する台部の面11a,
11bは平坦な面であり、これにより半導体レーザ素子
21,22の位置合わせが容易にできる。半導体レーザ
素子21,22の上下の電極面には金の蒸着膜が形成さ
れ、この半導体レーザ素子21,22の下面及び、銅製
の台部の上面11a,11bは上述の蒸着膜によって相
互に熱融着される。
FIG. 1 is an external view of an embodiment of the present invention.
Drawing (a) is the top view and drawing (b) is the perspective view. In the chip carrier 11 on which the first semiconductor laser device 21 and the second semiconductor laser device 22 are mounted,
The emitted light 91 of the semiconductor laser device 21 has a polarization plane perpendicular to
The polarization plane of the emitted light 101 of the semiconductor laser element 22 is horizontal, and the emission directions of the semiconductor laser elements 21 and 22 intersect each other at right angles on the same plane. Two semiconductor laser elements 21 and 22 are mounted so as to be equal to each other. The chip carrier 11 is made of copper and has a surface 11a of a base portion on which the semiconductor laser elements 21 and 22 are mounted.
11b is a flat surface, which allows easy alignment of the semiconductor laser elements 21 and 22. A vapor deposition film of gold is formed on the upper and lower electrode surfaces of the semiconductor laser elements 21 and 22. Fused.

【0011】図2は、本発明の半導体レーザチップキャ
リアを用いた光偏波合成システムの基本的構成例を示し
ている。チップキャリア11の半導体レーザ素子21,
22からの出射光91,101は、偏波合成膜41と、
第1レンズ31,32と、第2レンズ33で、光ファイ
バ51と結合される。この光学系により、同じモジュー
ルで2つの半導体レーザ素子を実装でき、光軸調整が極
めて容易にできる。
FIG. 2 shows a basic configuration example of an optical polarization combining system using the semiconductor laser chip carrier of the present invention. Semiconductor laser device 21 of chip carrier 11,
Lights 91 and 101 emitted from the beam 22 are generated by the polarization combining film 41,
The first lens 31 and 32 and the second lens 33 are coupled to the optical fiber 51. With this optical system, two semiconductor laser devices can be mounted in the same module, and the optical axis can be adjusted extremely easily.

【0012】[0012]

【発明の効果】以上説明したように本発明は、2つの半
導体レーザ素子を同一チップキャリアに装着しているた
め、光軸調整に手間をかけずにこれら2つの半導体レー
ザ素子からの光を1つのモジュールの中で合成し、1本
の光ファイバに出力することを容易に実現できる。これ
により、従来の方式における2台の光半導体レーザモジ
ュールと1個の光合成器を使用する方法に比べ、小形化
と低価格化とが実現可能であり、広汎な応用(例えば、
光波長多重や光伝送路冗長等)が期待できる。
As described above, according to the present invention, since two semiconductor laser elements are mounted on the same chip carrier, the light from these two semiconductor laser elements can be adjusted to one without any trouble in adjusting the optical axis. It is possible to easily realize combining in one module and outputting to one optical fiber. As a result, it is possible to realize downsizing and cost reduction as compared with the conventional method of using two optical semiconductor laser modules and one photosynthesizer, and to have a wide range of applications (for example,
Optical wavelength multiplexing, optical transmission line redundancy, etc.) can be expected.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例の外観図であり、分図(a)
は上面図、分図(b)は斜視図である。
FIG. 1 is an external view of an embodiment of the present invention, which is a partial view (a).
Is a top view, and FIG.

【図2】本発明の半導体レーザチップキャリアを用いた
光偏波合成システムの構成例を示す図である。
FIG. 2 is a diagram showing a configuration example of an optical polarization combining system using the semiconductor laser chip carrier of the present invention.

【図3】従来の半導体レーザモジュールを用いた光偏波
合成システムの構成例を示す図である。
FIG. 3 is a diagram showing a configuration example of an optical polarization combining system using a conventional semiconductor laser module.

【図4】従来の半導体レーザチップキャリアを示す図で
ある。
FIG. 4 is a diagram showing a conventional semiconductor laser chip carrier.

【符号の説明】[Explanation of symbols]

11,12 チップキャリア 21,22,23 半導体レーザ素子 31,32,33,34,35,36 光ファイバ結
合レンズ 41,42 偏波合成膜 50,51 光ファイバ 52,53,54 光ファイバ端末 61,62 偏波保存光ファイバ 81,82 半導体レーザモジュール 91,92 垂直な編波の出射光 101,102,103 水平な偏波の出射光
11, 12 Chip carrier 21, 22, 23 Semiconductor laser device 31, 32, 33, 34, 35, 36 Optical fiber coupling lens 41, 42 Polarization combining film 50, 51 Optical fiber 52, 53, 54 Optical fiber terminal 61, 62 polarization-maintaining optical fiber 81, 82 semiconductor laser module 91, 92 outgoing light of vertical knitting wave 101, 102, 103 outgoing light of horizontal polarization

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 偏波合成すべき垂直な偏波面の第1の出
射光及び水平な偏波面の第2の出射光の各各をそれぞれ
発生する第1の半導体レーザ素子と第2の半導体レーザ
素子とを、前記第1及び第2の出射光が同一平面上の各
発生源から当距離の位置で直角に交わるように装着した
ことを特徴とする半導体レーザチップキャリア。
1. A first semiconductor laser device and a second semiconductor laser which respectively generate a first emitted light having a vertical polarization plane and a second emitted light having a horizontal polarization plane to be polarization-combined. A semiconductor laser chip carrier, wherein the device and the device are mounted so that the first and second emitted lights intersect at right angles from respective sources on the same plane.
【請求項2】 請求項1記載の半導体レーザチップキャ
リアの前記第1及び第2の出射光の交点に偏波合成膜を
配置し、この偏波合成膜及びレンズを介して偏波合成さ
れた前記第1及び第2の出射光を1本の光ファイバに出
力することを特徴とする偏波合成システム。
2. A polarization synthesizing film is arranged at an intersection of the first and second emitted lights of the semiconductor laser chip carrier according to claim 1, and polarization synthesizing is performed through the polarization synthesizing film and the lens. A polarization beam combining system, wherein the first and second emitted lights are output to one optical fiber.
JP28242491A 1991-10-29 1991-10-29 Semiconductor laser chip carrier and polarized wave synthesis system Pending JPH05121838A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28242491A JPH05121838A (en) 1991-10-29 1991-10-29 Semiconductor laser chip carrier and polarized wave synthesis system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28242491A JPH05121838A (en) 1991-10-29 1991-10-29 Semiconductor laser chip carrier and polarized wave synthesis system

Publications (1)

Publication Number Publication Date
JPH05121838A true JPH05121838A (en) 1993-05-18

Family

ID=17652231

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28242491A Pending JPH05121838A (en) 1991-10-29 1991-10-29 Semiconductor laser chip carrier and polarized wave synthesis system

Country Status (1)

Country Link
JP (1) JPH05121838A (en)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1989012239A1 (en) * 1988-06-06 1989-12-14 Sumitomo Electric Industries, Ltd. Optical fiber for guiding laser
JPH09162810A (en) * 1995-12-12 1997-06-20 Tokin Corp Optical transmission/reception antenna system
JPH10321961A (en) * 1997-05-21 1998-12-04 Sharp Corp Semiconductor laser device
JP2000353332A (en) * 1999-04-19 2000-12-19 Samsung Electronics Co Ltd Optical output module and interchangeable optical pickup device employing this module
JP2002189148A (en) * 2000-12-20 2002-07-05 Mitsubishi Electric Corp Optical semiconductor element module
WO2003005508A1 (en) * 2001-07-02 2003-01-16 Furukawa Electric Co., Ltd Semiconductor laser module, optical amplifier, and method for manufacturing semiconductor laser module
US6765935B2 (en) 2000-12-15 2004-07-20 The Furukawa Electric Co., Ltd. Semiconductor laser module, manufacturing method thereof and optical amplifier
US6782028B2 (en) 2000-12-15 2004-08-24 The Furukawa Electric Co., Ltd. Semiconductor laser device for use in a semiconductor laser module and an optical amplifier
US7085440B2 (en) 2001-07-02 2006-08-01 The Furukawa Electric Co., Ltd Semiconductor laser module and optical amplifier
US7245643B2 (en) 2001-07-02 2007-07-17 The Furukawa Electric Co., Ltd. Semiconductor laser module and method of manufacturing the same
US7259905B2 (en) 2001-07-02 2007-08-21 The Furukawa Electric Co., Ltd. Semiconductor laser module, optical amplifier, and method of manufacturing the semiconductor laser module
US7408867B2 (en) 2002-04-04 2008-08-05 The Furukawa Electric Co., Ltd. Method of aligning an optical fiber, method of manufacturing a semiconductor laser module, and semiconductor laser module
JP2018022840A (en) * 2016-08-05 2018-02-08 住友電気工業株式会社 Optical module
JP2018085422A (en) * 2016-11-22 2018-05-31 住友電気工業株式会社 Optical module
JP2018085450A (en) * 2016-11-24 2018-05-31 住友電気工業株式会社 Optical module
JP2018098256A (en) * 2016-12-08 2018-06-21 住友電気工業株式会社 Optical module
JP2019535139A (en) * 2016-09-27 2019-12-05 サントル ナシオナル ドゥ ラ ルシェルシェ シアンティフィクCentre National De Larecherche Scientifique Laser system with optical feedback

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1989012239A1 (en) * 1988-06-06 1989-12-14 Sumitomo Electric Industries, Ltd. Optical fiber for guiding laser
JPH09162810A (en) * 1995-12-12 1997-06-20 Tokin Corp Optical transmission/reception antenna system
JPH10321961A (en) * 1997-05-21 1998-12-04 Sharp Corp Semiconductor laser device
JP2000353332A (en) * 1999-04-19 2000-12-19 Samsung Electronics Co Ltd Optical output module and interchangeable optical pickup device employing this module
US6587481B1 (en) 1999-04-19 2003-07-01 Samsung Electronics Co., Ltd. Light emitting module and compatible optical pickup device adopting the same
US6765935B2 (en) 2000-12-15 2004-07-20 The Furukawa Electric Co., Ltd. Semiconductor laser module, manufacturing method thereof and optical amplifier
US6782028B2 (en) 2000-12-15 2004-08-24 The Furukawa Electric Co., Ltd. Semiconductor laser device for use in a semiconductor laser module and an optical amplifier
JP2002189148A (en) * 2000-12-20 2002-07-05 Mitsubishi Electric Corp Optical semiconductor element module
WO2003005508A1 (en) * 2001-07-02 2003-01-16 Furukawa Electric Co., Ltd Semiconductor laser module, optical amplifier, and method for manufacturing semiconductor laser module
US7085440B2 (en) 2001-07-02 2006-08-01 The Furukawa Electric Co., Ltd Semiconductor laser module and optical amplifier
US7245643B2 (en) 2001-07-02 2007-07-17 The Furukawa Electric Co., Ltd. Semiconductor laser module and method of manufacturing the same
US7259905B2 (en) 2001-07-02 2007-08-21 The Furukawa Electric Co., Ltd. Semiconductor laser module, optical amplifier, and method of manufacturing the semiconductor laser module
US7529021B2 (en) 2001-07-02 2009-05-05 The Furukawa Electric Co., Ltd. Semiconductor laser module, optical amplifier, and method of manufacturing the semiconductor laser module
US7408867B2 (en) 2002-04-04 2008-08-05 The Furukawa Electric Co., Ltd. Method of aligning an optical fiber, method of manufacturing a semiconductor laser module, and semiconductor laser module
JP2018022840A (en) * 2016-08-05 2018-02-08 住友電気工業株式会社 Optical module
JP2019535139A (en) * 2016-09-27 2019-12-05 サントル ナシオナル ドゥ ラ ルシェルシェ シアンティフィクCentre National De Larecherche Scientifique Laser system with optical feedback
JP2018085422A (en) * 2016-11-22 2018-05-31 住友電気工業株式会社 Optical module
JP2018085450A (en) * 2016-11-24 2018-05-31 住友電気工業株式会社 Optical module
JP2018098256A (en) * 2016-12-08 2018-06-21 住友電気工業株式会社 Optical module

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