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JPH0512662A - Production of titanium magnetic disk substrate - Google Patents

Production of titanium magnetic disk substrate

Info

Publication number
JPH0512662A
JPH0512662A JP16170991A JP16170991A JPH0512662A JP H0512662 A JPH0512662 A JP H0512662A JP 16170991 A JP16170991 A JP 16170991A JP 16170991 A JP16170991 A JP 16170991A JP H0512662 A JPH0512662 A JP H0512662A
Authority
JP
Japan
Prior art keywords
magnetic disk
titanium
disk substrate
surface roughness
anodic oxidation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16170991A
Other languages
Japanese (ja)
Other versions
JP2500031B2 (en
Inventor
Yoko Okano
陽子 岡野
Hiroyoshi Suenaga
博義 末永
Toshio Sakiyama
利夫 崎山
Kenji Morita
健治 森田
Masaki Omura
雅紀 大村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JFE Engineering Corp
Original Assignee
NKK Corp
Nippon Kokan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NKK Corp, Nippon Kokan Ltd filed Critical NKK Corp
Priority to JP16170991A priority Critical patent/JP2500031B2/en
Publication of JPH0512662A publication Critical patent/JPH0512662A/en
Application granted granted Critical
Publication of JP2500031B2 publication Critical patent/JP2500031B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Manufacturing Of Magnetic Record Carriers (AREA)

Abstract

PURPOSE:To provide the process for production of the titanium magnetic disk substrate which can form this magnetic disk substrate to <=0.025mum surface roughness Rmax. CONSTITUTION:The surface roughness Rmax of a titanium plate prior to an anodic oxidation treatment is set at <=0.04mum at the time of producing the titanium magnetic disk substrate by subjecting a bland material for the titanium magnetic disk substrate to the anodic oxidation treatment. The voltage at the time of the anodic oxidation treatment is set at 4 to 12V and further, the current density at the end of of the anodic oxidation treatment is set at <=5X10<-4>A/mm<2>.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は、高密度記録・再生用
として用いられるチタン製磁気ディスク基板の製造方法
に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a titanium magnetic disk substrate used for high density recording / reproducing.

【0002】[0002]

【従来技術及び発明が解決しようとする課題】近年、磁
気ディスクは大容量化、高記録密度化が図られており、
そのために磁気ディスク基板上に形成される磁性膜(磁
性媒体)の厚みを薄くすること、及び磁気ヘッドと磁性
膜との間隔を小さくすること(低浮上化)が試みられて
いる。
2. Description of the Related Art In recent years, magnetic disks have been increased in capacity and recording density.
Therefore, attempts have been made to reduce the thickness of the magnetic film (magnetic medium) formed on the magnetic disk substrate and to reduce the distance between the magnetic head and the magnetic film (lower the flying height).

【0003】ところで、磁気ディスク基板としては、従
来よりアルミニウム合金が使用されているが、近年これ
に代えて、磁気ディスク基板としてチタンを使用するこ
とが試みられてきている。これは、チタンが耐熱性の点
でアルミニウム合金より優れ、広範囲の磁性膜をスパッ
タリングにより形成することが可能となり、磁性膜の特
性向上が可能となるためである。
By the way, aluminum alloys have been conventionally used as the magnetic disk substrate, but in recent years, it has been attempted to use titanium as the magnetic disk substrate instead of aluminum alloy. This is because titanium is superior to aluminum alloys in terms of heat resistance, a wide range of magnetic films can be formed by sputtering, and the characteristics of the magnetic film can be improved.

【0004】しかし、磁気ディスク基板としてチタンを
使用するためには、その表面粗さの改善が必要であると
いう大きな問題が存在している。チタンを磁気ディスク
基板として用いる場合に、表面粗さが問題となるのは次
の理由による。
However, in order to use titanium as a magnetic disk substrate, there is a big problem that it is necessary to improve its surface roughness. The surface roughness becomes a problem when titanium is used as a magnetic disk substrate for the following reason.

【0005】チタン製磁気ディスク基板は、十分な清浄
度を有していること、及び、NiPメッキを表面に施し
た場合における磁性膜のスパッタ温度の制限を除去する
ことの2つの観点から、多結晶チタン表面をそのまま用
い、アルミニウム合金製磁気ディスク基板で行われてい
る表面へのNiPメッキは施していない。ところが、現
在磁気ヘッドと磁気ディスクとの間隔(ヘッド浮上量)
を0.05μmとすることが試みられており、この低浮
上条件を満足させるためには、磁気ディスク基板の表面
粗さを全面0.025μm以下とする必要があるが、従
来のチタン製磁気ディスク基板ではこのような値を満足
することができない。すなわち、アルミニウム合金製磁
気ディスク基板では、表面がNiPの非晶質となり、均
一な研磨が可能であり全面0.025μm以下とするこ
とができるが、チタン製磁気ディスク基板は表面が多結
晶のままであるため、結晶面の研磨速度の差に基づく結
晶粒段差がどうしても残存してしまい、全面にわたりR
max が0.03μm以下を得るのは実質的に不可能であ
る。
Titanium magnetic disk substrates have many advantages in that they have sufficient cleanliness and that the limitation of the sputtering temperature of the magnetic film when NiP plating is applied to the surface is removed. The surface of the crystal titanium is used as it is, and the NiP plating on the surface of the aluminum alloy magnetic disk substrate is not applied. However, the current distance between the magnetic head and the magnetic disk (head flying height)
Has been attempted to be 0.05 μm, and in order to satisfy this low floating condition, the surface roughness of the magnetic disk substrate must be 0.025 μm or less over the entire surface. The substrate cannot satisfy such a value. In other words, the surface of the aluminum alloy magnetic disk substrate becomes NiP amorphous, and uniform polishing is possible, and the entire surface can be 0.025 μm or less. However, the surface of the titanium magnetic disk substrate remains polycrystalline. Therefore, the crystal grain step due to the difference in the polishing rate of the crystal plane is inevitably left, and the R
It is virtually impossible to obtain max of 0.03 μm or less.

【0006】この発明はかかる事情に鑑みてなされたも
のであって、表面粗さがRmax で0.025μm以下と
することができるチタン製磁気デイスク基板の製造方法
を提供することを目的とする。
The present invention has been made in view of the above circumstances, and an object thereof is to provide a method of manufacturing a titanium magnetic disk substrate whose surface roughness R max is 0.025 μm or less. ..

【0007】[0007]

【課題を解決するための手段及び作用】この発明は、上
記課題を解決するために、チタン製磁気ディスク基板素
材に陽極酸化処理を施してチタン製磁気ディスク基板を
製造するチタン製磁気ディスク基板の製造方法であっ
て、陽極酸化処理前のチタン板の表面粗さRmax が0.
04μm以下であり、陽極酸化処理の際の電圧が4〜1
2Vであり、かつ陽極酸化処理終了時の電流密度が5×
10-4A/mm2 以下であることを特徴とするチタン製
磁気ディスク基板の製造方法を提供する。
In order to solve the above problems, the present invention provides a titanium magnetic disk substrate for producing a titanium magnetic disk substrate by subjecting a titanium magnetic disk substrate material to anodizing treatment. In the manufacturing method, the surface roughness R max of the titanium plate before anodizing treatment is 0.
It is not more than 04 μm, and the voltage at the time of anodizing treatment is 4 to 1
2V and the current density at the end of anodizing treatment is 5 ×
10 -4 A / mm 2 There is provided a method for manufacturing a titanium magnetic disk substrate, which is characterized below.

【0008】本願発明者等は、チタン製磁気ディスク基
板の表面粗さを改善するために種々検討を重ねた結果、
従来の鏡面研磨のままのチタン製磁気ディスク基板で残
存する結晶粒段差が、特定条件の陽極酸化処理により軽
減され、これにより十分良好な表面粗さが簡便に得られ
ることを新たに見出した。この発明はこのような知見に
基づいてなされたものである。
The inventors of the present application have conducted various studies to improve the surface roughness of the titanium magnetic disk substrate, and as a result,
It was newly found that the crystal grain steps remaining in the conventional titanium-made magnetic disk substrate as mirror-polished can be reduced by the anodic oxidation treatment under specific conditions, whereby a sufficiently good surface roughness can be easily obtained. The present invention was made based on such knowledge.

【0009】すなわち、鏡面研磨によって一定値以下の
表面粗さに加工されたチタン板に対して陽極酸化処理を
施すと、その表面に結晶方位に応じて厚さの異なった陽
極酸化層が形成され、これにより、鏡面研磨のままのチ
タン製磁気ディスク基板に残存する結晶粒段差が軽減さ
れることとなる。つまり、チタンは酸化されやすく、ま
た酸化により研磨性が改善され、従って、鏡面研磨速度
は、酸化されやすい結晶面ほど大きくなり特定結晶面が
凹部となるが、鏡面研磨により一定の表面粗さに加工さ
れた後の陽極酸化処理では、酸化されやすい面ほど陽極
酸化皮膜厚さが増大し、この結果、2工程での結晶段差
がキャンセルしあって、非常に表面粗さの良好なチタン
製磁気ディスク基板が得られることとなる。
That is, when a titanium plate processed to have a surface roughness of a certain value or less by mirror polishing is anodized, an anodized layer having a different thickness depending on the crystal orientation is formed on the surface. As a result, the steps of crystal grains remaining on the titanium magnetic disk substrate that has been mirror-polished can be reduced. In other words, titanium is easily oxidized, and the polishing property is improved by the oxidation. Therefore, the mirror polishing rate becomes larger as the crystal surface that is more likely to be oxidized and the specific crystal surface becomes a recess, but the mirror surface polishing gives a certain surface roughness. In the anodic oxidation treatment after processing, the thickness of the anodic oxide film increases on the surface that is more likely to be oxidized, and as a result, the crystal steps in the two steps cancel each other out, making titanium magnetic A disk substrate will be obtained.

【0010】磁気ディスクにチタンの陽極酸化を取り入
れた例は、特開昭56−71821に見られる。この発
明はチタンを含む陽極酸化可能な膜を、基板上にスパッ
タリング等で形成した後、研磨仕上げを施すことによ
り、基板上に欠陥が無く磁性媒体と基板との間の原子の
拡散を防止する表面を形成することを目的としている。
しかし、この特開昭56−71821に開示された技術
では、本発明とは異なり、陽極酸化皮膜の表面粗さは良
好でなく、かつコントロ−ルできないものとしている。
このことは、特開昭56−71821において陽極酸化
処理後研磨を施していることから明白である。
An example of incorporating titanium anodic oxidation into a magnetic disk is found in Japanese Patent Laid-Open No. 56-71821. This invention prevents the diffusion of atoms between the magnetic medium and the substrate without defects on the substrate by forming an anodizable film containing titanium on the substrate by sputtering or the like and then polishing it. It is intended to form a surface.
However, in the technique disclosed in Japanese Patent Laid-Open No. 56-71821, unlike the present invention, the surface roughness of the anodic oxide film is not good and it cannot be controlled.
This is apparent from the fact that the polishing is performed after the anodizing treatment in JP-A-56-71821.

【0011】本発明では、陽極酸化処理における陽極酸
化電圧を4〜12Vにコントロ−ルする。これは、表面
粗さRmax 0.025μm以下を達成するために必要な
制御因子である。陽極酸化電圧が4V未満の場合、結晶
段差を覆うのに足る厚さの陽極酸化皮膜を形成すること
ができず、したがって、十分な表面粗さを達成すること
が不可能となる。一方、陽極酸化電圧が12Vより大き
い場合、結晶段差を覆うのに必要な厚さ以上の陽極酸化
皮膜が形成されてしまう。つまり、鏡面研磨後凹部とな
っていた結晶面で他結晶面より厚い陽極酸化皮膜が形成
され、陽極酸化処理後凸部となってしまう。この場合も
十分な表面粗さを達成するのが不可能となる。
In the present invention, the anodizing voltage in the anodizing process is controlled to 4 to 12V. This is a control factor necessary for achieving the surface roughness R max of 0.025 μm or less. If the anodic oxidation voltage is less than 4 V, it is not possible to form an anodic oxide film having a thickness sufficient to cover the crystal steps, and thus it becomes impossible to achieve sufficient surface roughness. On the other hand, when the anodic oxidation voltage is higher than 12 V, an anodic oxide film having a thickness larger than that required to cover the crystal step is formed. That is, an anodized film that is thicker than other crystal faces is formed on the crystal surface that has become a concave portion after mirror polishing, and becomes a convex portion after anodizing treatment. Also in this case, it becomes impossible to achieve sufficient surface roughness.

【0012】陽極酸化処理前の基板の表面粗さをRmax
で0.04μm以下に規定する。これは、陽極酸化処理
前の鏡面研磨において凹部の深さ(Rmax )が大きすぎ
ると陽極酸化処理による表面粗さの改善の効果が及ばな
いからであり、Rmax が0.04μm以下で初めて表面
粗さ0.025μm以下が達成されることとなる。
The surface roughness of the substrate before the anodizing treatment is defined as R max.
To 0.04 μm or less. This is because the effect of the depth of the recess in the mirror-polished before anodization (R max) is too large when the surface roughness by anodic oxidation process improvement does not reach, R max for the first time below 0.04μm A surface roughness of 0.025 μm or less will be achieved.

【0013】陽極酸化処理終了時の電流密度を5×10
-4A/mm2 以下に規定する。これは以下の理由によ
る。陽極酸化皮膜の厚さやその特性は、平衡的にはその
陽極酸化電圧に依存するが、平衡に至る過渡的な状態で
は、電極取り出し位置、極間距離等の影響を受け、その
膜厚等が場所により異なることになる。絶縁性の陽極酸
化皮膜の形成進展によりその電流密度は低下するが、そ
の処理終了時の電流密度が5×10-4A/mm2 以下の
場合に初めて均一な表面粗さの達成が可能となる。
The current density at the end of the anodizing treatment is 5 × 10 5.
-4 A / mm 2 It is specified below. This is for the following reason. The thickness of the anodic oxide film and its characteristics depend on the anodic oxidation voltage in equilibrium, but in a transient state reaching equilibrium, the film thickness etc. is affected by the electrode lead-out position, inter-electrode distance, etc. It depends on the location. The current density decreases due to the progress of formation of the insulating anodic oxide film, but it is possible to achieve uniform surface roughness only when the current density at the end of the treatment is 5 × 10 -4 A / mm 2 or less. ..

【0014】以上のように、本発明では、鏡面研磨によ
って表面粗が一定の良好な値に規定されたチタン板に、
コントロ−ルされた陽極酸化処理を施すことにより、一
層良好な表面粗さを得ることができ、磁気ヘッドの低浮
上化が可能となる。
As described above, according to the present invention, the titanium plate having the surface roughness defined by the mirror-polishing to have a constant and good value,
By performing the controlled anodic oxidation treatment, a better surface roughness can be obtained, and the flying height of the magnetic head can be reduced.

【0015】なお、ここでいうチタン板は、純チタンに
限らず、各種チタン合金、さらに表面硬化処理を施した
純チタン板・各種チタン合金板にも適用可能であること
は言うまでも無い。
It is needless to say that the titanium plate referred to here is not limited to pure titanium, but can be applied to various titanium alloys, pure titanium plates subjected to surface hardening treatment, and various titanium alloy plates.

【0016】[0016]

【実施例】以下、この発明の実施例について説明する。Embodiments of the present invention will be described below.

【0017】Rmax が0.029〜0.100μmの表
面粗さを有する板厚1.27mmの3.5インチの純チ
タン製磁気ディスク基板素材に、種々の条件で陽極酸化
処理を施した。電解液は1.0vol%リン酸水溶液で
あり、陰極は純チタン板とし、陽極酸化処理を施す純チ
タン製磁気ディスク基板素材との間隔は2cmとした。
A 3.5 inch pure titanium magnetic disk substrate material having a plate thickness of 1.27 mm and a surface roughness of R max of 0.029 to 0.100 μm was anodized under various conditions. The electrolytic solution was a 1.0 vol% phosphoric acid aqueous solution, the cathode was a pure titanium plate, and the distance from the pure titanium magnetic disk substrate material to be anodized was 2 cm.

【0018】陽極酸化処理電圧は0〜50V、陽極酸化
処理終了電流密度は1×10-1〜1×10-6A/mm2
まで変化させた。表面粗さは、非接触粗さ計を用いて、
基板の50ケ所をランダムに測定して評価した。なお、
ここでの表面粗さRmax は、測定50ケ所の平均であ
る。また、磁気ディスクの均一性は、測定表面粗さの標
準偏差σR を求め、σR が0.001μmより小さけれ
ば均一、0.001μm以上であれば不均一とした。表
1にその結果を示す。
The anodizing voltage is 0 to 50 V, the anodizing finish current density is 1 × 10 -1 to 1 × 10 -6 A / mm 2.
Changed. The surface roughness is measured using a non-contact roughness meter.
Evaluation was performed by randomly measuring 50 points on the substrate. In addition,
Surface roughness R max here Is the average of 50 measurement points. Regarding the uniformity of the magnetic disk, the standard deviation σ R of the measured surface roughness was determined. If σ R was smaller than 0.001 μm, it was uniform, and if it was 0.001 μm or more, it was not uniform. The results are shown in Table 1.

【0019】[0019]

【表1】 [Table 1]

【0020】表1から明らかなように、陽極酸化処理前
の表面粗が0.04μm以下であり、陽極酸化電圧が4
〜12Vであり、陽極酸化終了時の電流密度が5×10
-4A/mm2 以下であれば、表面粗さRmax が0.025
μm以下であり、なおかつ均一性が良好な磁気ディスク
基板が得られることが確認された。
As is apparent from Table 1, the surface roughness before the anodizing treatment is 0.04 μm or less, and the anodizing voltage is 4
~ 12V, current density at the end of anodization is 5 x 10
-4 A / mm 2 If it is below, surface roughness R max Is 0.025
It was confirmed that a magnetic disk substrate having a thickness of less than μm and good uniformity was obtained.

【0021】[0021]

【発明の効果】この発明によれば、基板の表面粗さR
max が0.025μm以下で、なおかつ均一性が良好な
チタン製磁気ディスク基板を容易に得ることができるチ
タン製磁気ディスク基板が提供される。従って、高密度
記録可能な特性の記録媒体を、簡単、かつ安価に提供す
ることが可能となり、情報処理装置産業上に多大な効果
を有する。
According to the present invention, the surface roughness R of the substrate is
A titanium magnetic disk substrate having a max of 0.025 μm or less and easily obtaining a titanium magnetic disk substrate having good uniformity is provided. Therefore, it becomes possible to easily and inexpensively provide a recording medium having characteristics capable of high-density recording, which has a great effect on the information processing apparatus industry.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 森田 健治 東京都千代田区丸の内一丁目1番2号 日 本鋼管株式会社内 (72)発明者 大村 雅紀 東京都千代田区丸の内一丁目1番2号 日 本鋼管株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Kenji Morita, 1-2, Marunouchi, Chiyoda-ku, Tokyo Nihon Kokan Co., Ltd. (72) Masanori Omura, 1-2-1, Marunouchi, Chiyoda-ku, Tokyo Main Steel Pipe Co., Ltd.

Claims (1)

【特許請求の範囲】 【請求項1】 チタン製磁気ディスク基板素材に陽極酸
化処理を施してチタン製磁気ディスク基板を製造するチ
タン製磁気ディスク基板の製造方法であって、陽極酸化
処理前のチタン板の表面粗さRmax が0.04μm以下
であり、陽極酸化処理の際の電圧が4〜12Vであり、
かつ陽極酸化処理終了時の電流密度が5×10-4A/m
2 以下であることを特徴とするチタン製磁気ディスク
基板の製造方法。
Claim: What is claimed is: 1. A method for manufacturing a titanium magnetic disk substrate, which comprises subjecting a titanium magnetic disk substrate material to anodization treatment to manufacture a titanium magnetic disk substrate, wherein titanium before anodization treatment is used. The surface roughness R max of the plate is 0.04 μm or less, the voltage during the anodizing treatment is 4 to 12 V,
And the current density at the end of anodizing treatment is 5 × 10 -4 A / m
m 2 A method of manufacturing a magnetic disk substrate made of titanium characterized by the following.
JP16170991A 1991-07-02 1991-07-02 Method for manufacturing titanium magnetic disk substrate Expired - Lifetime JP2500031B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16170991A JP2500031B2 (en) 1991-07-02 1991-07-02 Method for manufacturing titanium magnetic disk substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16170991A JP2500031B2 (en) 1991-07-02 1991-07-02 Method for manufacturing titanium magnetic disk substrate

Publications (2)

Publication Number Publication Date
JPH0512662A true JPH0512662A (en) 1993-01-22
JP2500031B2 JP2500031B2 (en) 1996-05-29

Family

ID=15740391

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16170991A Expired - Lifetime JP2500031B2 (en) 1991-07-02 1991-07-02 Method for manufacturing titanium magnetic disk substrate

Country Status (1)

Country Link
JP (1) JP2500031B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9879645B2 (en) 2016-02-18 2018-01-30 Caterpillar Inc. Control valve bounce limiting mechanism for fuel injectors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9879645B2 (en) 2016-02-18 2018-01-30 Caterpillar Inc. Control valve bounce limiting mechanism for fuel injectors

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Publication number Publication date
JP2500031B2 (en) 1996-05-29

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